CN118016612A - Electronic assembly and method for manufacturing an electronic assembly - Google Patents
Electronic assembly and method for manufacturing an electronic assembly Download PDFInfo
- Publication number
- CN118016612A CN118016612A CN202311484994.4A CN202311484994A CN118016612A CN 118016612 A CN118016612 A CN 118016612A CN 202311484994 A CN202311484994 A CN 202311484994A CN 118016612 A CN118016612 A CN 118016612A
- Authority
- CN
- China
- Prior art keywords
- power semiconductor
- temperature sensor
- electronic assembly
- semiconductor element
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 144
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 8
- 239000012778 molding material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 29
- 150000001875 compounds Chemical class 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- 238000009434 installation Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000009529 body temperature measurement Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Power Conversion In General (AREA)
Abstract
The present invention relates to an electronic assembly and a method for manufacturing an electronic assembly, the electronic assembly comprising: -at least one power semiconductor element (6), -at least one temperature sensor (7), and-at least one substrate (5), wherein the at least one temperature sensor (7) and the at least one power semiconductor element (6) are fixed at the substrate (5) or at different substrates (5) in sections different from each other, wherein the at least one power semiconductor element (6) and the at least one temperature sensor (7) are connected via at least one thermal connection element (8).
Description
Technical Field
The present invention relates to an electronic assembly and a method for manufacturing an electronic assembly.
Background
Power semiconductor elements such as IGBTs or MOSFETs are used for a variety of purposes. For example, such power semiconductor components are used for the direction conversion of a direct voltage, for example, in order to operate an electric drive of a vehicle.
The power semiconductor element is designed over a predetermined operating temperature range. In this way, for example, the maximum permissible operating temperature of the power semiconductor element is not exceeded, since the functionality of the power semiconductor element may then be influenced. In order to perform temperature monitoring, in particular during operation of the power semiconductor element, a temperature sensor can be used in a known manner.
US 2014/023708 A1 is known from the prior art, which discloses a medical appliance with a power device and a temperature sensor. The temperature sensor is arranged here outside the power device but in the vicinity of the power device.
Furthermore, US2013/0228890 A1 is known, which discloses a power semiconductor module and a temperature sensor, wherein the temperature sensor is sintered on a DBC substrate in an electrically insulating manner.
DE 196 30 902b4 is also known, which discloses a device for temperature monitoring of a power semiconductor arrangement.
It is problematic that in the arrangements of the temperature sensor relative to the power semiconductor element known in the prior art, interference effects can occur and thus inaccurate temperature measurement of the selected power semiconductor element occurs. For example, the temperature measurement of a selected power semiconductor element may be affected by the thermal radiation of other power semiconductor elements. Furthermore, the temperature sensor arranged directly on the substrate has the problem of a large installation space requirement, which additionally leads to high production costs.
It is also disadvantageous that inaccuracies in the temperature measurement or temperature determination lead to higher costs and also to increased installation space requirements, since tolerances in the temperature determination have an influence on the installation space requirements of the power semiconductor component. The greater the inaccuracy, the greater the installation space requirement and, in particular, the chip area requirement of the power semiconductor component on the respective substrate. This is undesirable because especially the higher chip area requirements (e.g. on SiC substrates) result in higher manufacturing costs.
The object is therefore to create an electronic assembly and a method for producing an electronic assembly, which enable the temperature of a power semiconductor component to be detected as accurately as possible, without increasing the installation space requirements in particular.
Disclosure of Invention
The solution to this problem is achieved by the subject matter having the features of the independent claims. Further advantageous embodiments of the invention emerge from the dependent claims.
An electronic assembly is presented that includes at least one power semiconductor element, at least one temperature sensor, and at least one substrate. The power semiconductor element may be part of an inverter, in particular a pulse-width modulated inverter. The pulse-width modulation inverter can in turn be used to supply an operating (alternating current) voltage of an electric machine, which can be in particular a drive machine of an electric vehicle or a hybrid vehicle. Accordingly, an inverter having such an electronic assembly and a vehicle having such an inverter or such an electronic assembly are also described. The at least one temperature sensor is used to detect the temperature of the power semiconductor element, in particular during operation of the power semiconductor element. The temperature sensor for detecting the temperature of the selected power semiconductor element may also be referred to as a temperature sensor associated with the (selected) power semiconductor element. The temperature sensor may be configured as a contact temperature sensor, wherein the contact areas are contacted by the thermal connection element. However, the type of temperature sensor is in principle not limited to these embodiments. In this way, the temperature sensor can also be configured as a cold conductor, a resistance thermometer or a thermocouple. Preferably, the temperature sensor is configured as a thermal conductor or as a so-called NTC element.
The substrate may in particular be a DBC substrate. Such a substrate may in particular comprise at least one layer having electrical conductivity (in particular a copper layer) and a carrier layer (for example a ceramic layer). The conductor track structures and the contact surfaces can be produced on the substrate in order to fix structural elements, such as the explained power semiconductor element, in particular by soldering, sintering or gluing.
The at least one temperature sensor and the at least one power semiconductor element are fixed at the substrate in sections different from each other, in particular at or in sections different from each other of the substrate surface. In particular, the temperature sensor is therefore not fixed at the power semiconductor element. The arrangement in different sections can be provided in particular if the power semiconductor element and the temperature sensor associated with the power semiconductor element are arranged in a non-overlapping, i.e. non-intersecting manner, in a common projection plane (which can be oriented parallel to the surface of the substrate). Thereby, the temperature sensor and the power semiconductor element can thus be fixed at the same carrier, i.e. at the substrate. Alternatively, the temperature sensor and the power semiconductor element may also be fixed at different substrates.
According to the invention, the at least one power semiconductor element and the at least one temperature sensor (i.e., the temperature sensor associated with the power semiconductor element) are connected via at least one thermal connection element. The thermal connection element is used for transmitting thermal energy from the power semiconductor element to the temperature sensor. The thermal connection element is composed in particular of a material having a good heat conducting capacity, in particular a heat conducting capacity which is greater than the heat conducting capacity of air, preferably greater than the heat conducting capacity of the molding compound (Moldmasse) into which the power semiconductor element is embedded, for example greater than 0.5, more preferably greater than 1, more preferably greater than 100. The thermal connection element may in particular be constructed from metal (e.g. copper). The heat transfer capability is described herein in terms of W/mK and represents the flow of heat through the material due to heat transfer. It is possible that the structural volume in which the at least one power semiconductor element is arranged is filled with molding compound. The structural volume in which the temperature sensor is arranged can likewise be filled with molding compound. However, this is not mandatory. In this case, the thermal connection element may extend through the molding compound.
In this way, a good thermal connection is advantageously achieved between the power semiconductor element and a temperature sensor associated with the power semiconductor element, which can thus detect the temperature of the power semiconductor element very accurately. This in turn enables accurate temperature detection in an advantageous manner.
In a preferred embodiment, the temperature sensor is connected to the base via a stud element. The temperature sensor or the temperature sensors can be arranged, in particular fixed, at the free end of the pillar element, wherein the other end of the pillar element is fixed at the base, in particular at the surface of the base. Thus, the stud member may thus be used to hold/secure one or more temperature sensors at the base. In particular, by being fixed at the pillar element, the temperature sensor can be arranged in a structural volume which is located above the structural volume in which the power semiconductor element is arranged in a direction orthogonal to the base surface and oriented away from the base surface. The pillar element thus enables an arrangement of the temperature sensor with a distance from the substrate, in particular the substrate surface, which is greater than the distance of the power semiconductor element, wherein the distance can be detected in the direction explained.
Since the thermal energy transmission from the temperature sensor to the power semiconductor element associated with it is ensured by the thermal connection element, but the distance of the temperature sensor from the substrate and thus from the further power semiconductor element fastened to the surface of the substrate reduces its heat input, the disturbing influence of the in particular further power semiconductor element on the temperature measurement is advantageously reduced by this arrangement. At the same time, since not the temperature sensor but only its pillar element has to be connected to the substrate surface, a reduction in the installation space requirements on the substrate surface is advantageously achieved. The required fastening surface of the pillar element can be smaller than that required for the temperature sensor. The electronic assembly thus enables reliable and accurate temperature detection, wherein at the same time there is a small installation space requirement on the substrate surface. In particular, the maximum diameter of the pillar element may be less than 0.8mm.
In another embodiment, the temperature sensor is located at a distance from the surface of the substrate that is greater than the distance of the at least one power semiconductor element. The distance can be measured here along an axis which is orthogonal to the surface of the substrate, at which the power semiconductor element is fixed, and which is oriented away from this surface. In other words, the temperature sensor may be arranged in a plane further from the surface or in a volume further from the surface than the at least one power semiconductor element. This has been explained previously. In particular, the distance of the temperature sensor from the substrate surface along the mentioned axis may be more than 0.16mm and/or less than 10cm. It is furthermore possible that the temperature sensor is spaced from the at least one power semiconductor element by a distance of more than 1mm along the axis.
It is furthermore possible that the minimum distance between the reference point (for example, the geometric center) of the temperature sensor, in particular of the temperature sensor, and the reference point (for example, the geometric center) of the at least one power semiconductor element, in particular of the power semiconductor element, in a common projection plane oriented parallel to the substrate surface is greater than 4cm.
The larger distance of the temperature sensor leads to the previously explained and reliable temperature detection, since the reduction by the arrangement with the larger distance is affected by the interference of the other power semiconductor elements.
In another embodiment, at least one power semiconductor element and at least a portion of the pillar element are embedded in the molding compound. In particular, a molding compound, which may be composed of epoxy resin, is used to encapsulate the at least one semiconductor component, i.e. to protect it from external influences. By embedding at least a portion of the pillar element in the molding compound, a reliable and stable fixing of the temperature sensor in the base is advantageously achieved, since the base is also encapsulated in the molding compound. It is possible, but not mandatory, to embed the entire pillar element with the temperature sensor arranged at it into the molding material.
In another embodiment, the stud element is connected to the base via a fixing element. The fastening element may be configured in particular for fastening to a substrate, wherein such fastening may be achieved in other ways via sintering, welding or gluing. The fastening element can have or form at least one fastening connection for fastening the column element. In this case, the pillar element and the fastening element can be embodied as separate elements. However, it is also possible that the stud element constitutes a fixing element, whereby the fixing element is an integral part of the stud element. The fastening element can be used for fastening exactly one column element, but can also be used for fastening a plurality of column elements. By providing the fastening element, a reliable mechanical fastening of the pillar element and thus of the temperature sensor to the substrate is advantageously achieved.
In another embodiment, at least one signal line is connected to a temperature sensor. The signal line may be used to transmit an output signal (e.g., a current signal), from which the temperature may be determined. The signal lines extend away from the temperature sensor and the power semiconductor element or the substrate surface. In particular, the portion of the signal line in the direction away from the direction of extension of the temperature sensor may not be equal to zero, which portion is parallel to the direction that is oriented perpendicularly to the substrate surface and away from the substrate surface. In this way, it is advantageously achieved that the output signal generated or provided by the temperature sensor is influenced not or only to a very reduced extent by further structural elements of the electronic assembly, for example by thermal radiation, so that a reliable and accurate temperature determination can be achieved.
In a further embodiment, the electronic assembly comprises a set of at least two power semiconductor elements, wherein the power semiconductor element set is associated with at least one temperature sensor, preferably a set of at least two temperature sensors. Preferably, a group having a number n of power semiconductor elements is associated with a group having the same number n of temperature sensors, wherein a respective one of the temperature sensors of the group is associated with a respective one of the power semiconductor elements of the group. Furthermore, the power semiconductor elements of the power semiconductor element group and the temperature sensors of the temperature sensor group associated with the power semiconductor elements are fixed or arranged on the substrate in sections different from each other. The temperature sensor can be fastened to the base in the section via a common or a corresponding column element. The boundary line of the power semiconductor element group (which encloses all the power semiconductor elements of the group) and the boundary line of the temperature sensor group (which encloses all the power semiconductor elements of the group) may not intersect in a common projection plane, which may be oriented parallel to the substrate surface. In particular, the boundary line may here be a line having a minimum length, which limits the area in which all power semiconductor elements of the respective group are arranged. The same applies to the boundary line of the temperature sensor group. In other words, the areas surrounded by these boundary lines may be arranged disjointly in a common projection plane. In this way, a simple production of the electronic assembly is advantageously achieved, since the assembly work for fixing the temperature sensor only has to be carried out in one, but not in a different region.
In another embodiment, the plurality of stud elements are connected to the base via a common fastening element. In this way, a simple production of the electronic assembly is also advantageously achieved, since only one fastening element must be used to fasten a plurality of column elements. Also, the manufacturing cost can be reduced in this regard.
In a further embodiment, the temperature sensor has at least one signal-connection region for a signal interface. The signal interface may be used to make electrical contact through the previously explained signal lines. In particular, the previously explained output signal can be provided via the signal-coupling region. Furthermore, the temperature sensor has a coupling region for the thermal connection element, wherein the coupling region differs from the at least one signal coupling region. In particular, the at least one signal connection region and the connection region for the thermal connection element can be arranged or embodied electrically insulated from one another. The coupling region for the thermal connection element at the power semiconductor element can also be different from the electrical coupling region for the electrical (signal) interface of the power semiconductor element and in particular arranged or configured in an insulated manner with respect to the electrical coupling region. In this way, an increased operational safety of the electronic assembly results in an advantageous manner, since the risk of the transmission of electrical energy between the power semiconductor element and the temperature sensor, which may damage at least one of the two elements, is reduced.
Furthermore, a method for producing an electronic assembly is proposed, wherein at least one power semiconductor element, at least one temperature sensor and at least one substrate are provided, wherein the at least one temperature sensor and the at least one power semiconductor element are fastened to the substrate in sections that differ from one another or to different substrates, wherein the at least one power semiconductor element and the at least one temperature sensor are connected via at least one thermal connection element. The method advantageously enables the production of an electronic assembly according to one of the embodiments described in the present disclosure, which has the corresponding technical advantages and which have also been explained.
Furthermore, a method for measuring a temperature of at least one power semiconductor element of an electronic assembly according to one of the embodiments described in the present disclosure is described. The output signal of at least one temperature sensor connected to the power semiconductor element via the thermal connection element is detected, wherein the temperature of the power semiconductor element is determined from the output signal. The temperature determination can be performed by means of an evaluation device, which can comprise or be embodied as a microcontroller or an integrated circuit. For example, the evaluation device can be connected to the temperature sensor via at least one signal line. It is furthermore possible to perform error correction upon determination. In particular, when thermal energy is transmitted from the power semiconductor element to the temperature sensor, a correction for compensating the distance-dependent loss can be performed via the thermal connection element. In this way, an accurate determination of the temperature is advantageously achieved.
Drawings
The present invention is explained in more detail according to examples. In the respective figures:
Fig. 1 shows a schematic cross-section through an electronic assembly according to the invention in a first embodiment;
Fig. 2 shows a schematic cross-section through an electronic assembly according to the invention in another embodiment;
fig. 3 shows a schematic cross-section through an electronic assembly according to the invention in another embodiment;
FIG. 4 shows a schematic perspective view of an electronic assembly according to the invention in another embodiment;
fig. 5a shows a schematic top view towards an electronic assembly according to the invention in another embodiment;
Fig. 5b shows a schematic top view towards an electronic assembly according to the invention in another embodiment;
FIG. 5c shows a schematic top view of another electronic assembly according to the invention in another embodiment; and
Fig. 6 shows a schematic top view towards a plurality of electronic assemblies.
Next, the same reference numerals denote elements having the same or similar technical features.
Detailed Description
Fig. 1 shows a schematic cross-section through an electronic assembly 1 according to the invention according to a first embodiment of the invention. The electronic assembly 1 comprises a substrate 5 with a carrier layer 2, in particular a ceramic-carrier layer, which can be constructed, for example, from Al 2O3 or Si 3N4. On the upper side of the carrier layer 2a first conductive layer 3, for example a copper layer, is arranged, wherein on the opposite side (i.e. the lower side) of the carrier layer 2a further conductive layer 4, for example a likewise copper layer, is arranged. In its entirety, the carrier layer 2 and the conductive layers 3,4 form a substrate. At the upper side of the substrate 5, in particular in the recess of the first conductive layer 3 and at the surface of the carrier layer 2 exposed thereby, a power semiconductor element 6 is arranged and fixed, for example by soldering or sintering.
Furthermore, the electronic assembly 1 comprises a temperature sensor 7 which is likewise fixed to the surface of the substrate, i.e. the surface of the carrier layer 2 in the other recess in the first conductive layer 3, in particular likewise by soldering or sintering. It is shown that the temperature sensor 7 and the power semiconductor element 6 are fixed in different sections of the substrate 5, in particular the substrate surface, from each other.
Furthermore shown is a thermal connection element 8 extending from the power semiconductor element 6 to the temperature sensor 7. The first end of the thermal connection element 8, which may be configured, for example, as a copper wire, contacts the power semiconductor element 6 in a contact region or contact section. Likewise, the other end of the thermal connection element 8 contacts the temperature sensor 7 in the respective contact region. The contact region can be arranged or embodied in an electrically insulated manner with respect to the further region of the power semiconductor element 6 or the temperature sensor 7. The thermal connection element 8 may be constructed of aluminum, copper or other materials with heat conducting capabilities. The thermal connection element can also be configured as a heat pipe.
Also shown is a signal line 9 for electrically contacting the temperature sensor 7. The signal line 9 is used in particular for transmitting a current signal, from which the temperature of the temperature sensor 7 and thus of the power semiconductor element 6 can be determined, for example by means of an evaluation device, not shown. Furthermore, the signal line 9 is shown extending away from the temperature sensor 7 and the substrate surface.
Fig. 2 shows a schematic cross section through an electronic assembly 1 according to the invention in another embodiment. Unlike the embodiment shown in fig. 1, the temperature sensor 7 is connected to the base 5 via a pillar element 10. The pillar element 10 is fastened via the fastening element 11 in a recess of the conductive layer 3 at the base surface, in particular at the surface of the carrier layer 2. In particular, the first end of the pillar element 10 is fixed at the fixing element 11. The fastening element 11 and the pillar element 10 can be elements which are formed separately from one another. However, it is also possible that the fixing element 11 is an integral part of the pillar element 10.
At the free, non-fixed end, the pillar element 10 has a fixed section 12 for the temperature sensor 7. The fastening section 12 can be configured in the form of a plate, wherein the temperature sensor 7 is fastened to the surface of the section 11, in particular in a material-fitting manner, for example by means of adhesive bonding.
Also shown is a thermal connection element 8 which thermally connects the power semiconductor element 6 and the temperature sensor 7. As a result of a comparison of the embodiments in fig. 1 and 2, the thermal connection element 8 can be constructed in a curved manner but also in a straight line.
It is evident that the distance between the temperature sensor 7 and the substrate surface, in particular the surface of the carrier layer 2 or the surface of the first conductive layer 3, is greater than the distance of the at least one power semiconductor element 6, wherein this distance can be measured along the z-direction z, which is symbolically indicated by an arrow in fig. 2. The distance may represent the distance between the side (underside) of the temperature sensor 7/power semiconductor element 6 facing the substrate surface, or the distance between a reference point (such as a geometrical centre point) of the respective element and the substrate surface. Also shown is an x-direction x oriented orthogonal to the z-direction z and oriented parallel to the plane of the substrate surface. Not shown is the transverse direction, which may be oriented orthogonal to the x-direction x and the z-direction z, and which together with the x-direction x spans a plane oriented parallel to the substrate surface.
Along the z-direction, the distance between the temperature sensor 7 and the substrate surface may for example be greater than 1cm. Along the x-direction x, the distance between the power semiconductor element 6 and the temperature sensor 7 may in particular be greater than 4cm.
Shown enclosed by the dashed line is a first structural volume 13 in which the power semiconductor element 6 and at least a part of the pillar element 7 are arranged. The first structural volume 13 may be filled with molding material. Furthermore, a second structural volume 14 is shown, likewise enclosed by a dashed line, in which the remainder of the pillar element 10 and the temperature sensor 7 are arranged. The second structural volume 14 is arranged above/behind the first structural volume 13 along the z-direction z.
Fig. 3 shows a schematic cross-section through an electronic assembly according to the invention according to another embodiment. The fastening element 11 is fastened via a connecting layer 15 (for example an adhesive layer or a sintered layer) to a base surface, which is formed by the carrier layer 2 in the fastening section for the pillar element 10.
Fig. 4 shows a perspective view of the electronic assembly 1 in another embodiment. Six power semiconductor elements 6 and temperature sensors 7 associated with each of these power semiconductor elements 6 are shown, which are each arranged on a pillar element 10. It is also shown that all stud elements 10 are fixed at a common fixing element 11.
Also shown are thermal connection elements 8, which each thermally connect the power semiconductor element 6 to a respective one of the temperature sensors 7. Also shown is a base 5, to which base 5 not only the power semiconductor element 6 but also the temperature sensor 7 are fastened via a pillar element 10. For clarity, only the pillar element 10 and the signal line 9 for coupling the signal line pair of the temperature sensor 7 are provided with reference numerals.
The power semiconductor elements 6 form elements of a power semiconductor element group. Also, the temperature sensor 7 forms an element of a temperature sensor group. It is obvious that the group of power semiconductor elements 6 and the group of temperature sensors 7 are arranged in or fixed at different areas of the substrate surface, respectively.
Fig. 5a shows a schematic top view towards an electronic assembly 1 according to the invention, which has a substrate 5 at which a temperature sensor 7 and a power semiconductor element 6 are fixed. Also shown are thermal connection elements 8, which each thermally connect the power semiconductor element to the temperature sensor 7. It is also shown that the temperature sensors 7 associated with the power semiconductor elements 6 are spatially fixed to the substrate surface next to the regions of the respective power semiconductor elements 6. Here, it is shown that the temperature sensors 7 are each fastened to the base surface via the pillar element 10 and the fastening element 11 in different regions from one another, wherein the distance between the power semiconductor element 6 and the temperature sensor 7 associated with the power semiconductor element is smaller than one of the distances between the temperature sensor 7 and the remaining power semiconductor element 6.
Fig. 5b shows another schematic top view towards an electronic assembly 1 according to the invention. Six power semiconductor elements 6 are shown, which are each connected to a respective one of the temperature sensors 7 via a thermal connection element 8, wherein the respective 3 temperature sensors 7 are fixed to the substrate surface via a common fixing element 11 (see, for example, fig. 4). The first power semiconductor component group having three power semiconductor components 6 is associated with a first temperature sensor group having three temperature sensors 7, wherein the power semiconductor components 6 of the first power semiconductor component group are each connected to the temperature sensors 7 of the first temperature sensor group via a thermal connection element 8, and the temperature sensors 7 are fastened via a pillar element 10 to a common fastening element 11, wherein the common fastening element 11 is in turn fastened to the base surface.
The second power semiconductor element group likewise comprises three power semiconductor elements 6, which are each thermally connected to a temperature sensor 7 of the second temperature sensor group via a thermal connection element 8, which likewise comprises three temperature sensors 7. These temperature sensors 7 are fastened via the pillar element 10 to a further common fastening element 11, wherein the further common fastening element 11 is in turn fastened to the base surface. All temperature sensors 7 and power semiconductor elements 6 of the respective group are fixed at the substrate surface in different areas of the substrate surface.
It is obvious that the arrangement of the power semiconductor elements 6 of a group and the temperature sensors 7 associated with these power semiconductor elements is such that the distance between the power semiconductor elements 6 (of the selected group) and the temperature sensors 7 associated with these power semiconductor elements is smaller than the distance between the further power semiconductor elements (of the remaining group or groups) and these temperature sensors 7. It is also obvious that the power semiconductor elements 6 of the group and the temperature sensors 7 associated with these power semiconductor elements are arranged such that the thermal connection element 8 connecting the selected power semiconductor element 6 with the temperature sensor 7 is not guided past the other power semiconductor element 6.
Fig. 5c shows a schematic top view towards an electronic assembly 1 according to the invention in another embodiment. In contrast to the embodiment shown in fig. 5b, the arrangement of the power semiconductor elements 6 of a group and the temperature sensors 7 associated with these power semiconductor elements is such that the thermal connection element 8 connecting the selected power semiconductor element 6 with the temperature sensor 7 is guided through the other power semiconductor element 6.
Fig. 6 shows a schematic perspective view of a plurality of electronic assemblies 1 comprising a substrate 5 and six semiconductor elements 6, respectively. The first electronic assembly 1a of these plurality of electronic assemblies 1 comprises eighteen temperature sensors 7, which are fixed at the base surface of the base 5 of the first electronic assembly 1a via stud elements 10, respectively. For clarity, only the temperature sensor 7, the pillar element 10 and the fixing element 11 are provided with reference numerals. It is shown that a first group of six temperature sensors 7 is fixed via a first fixing element 11 at the substrate surface of the substrate 5 of the first electronic assembly 1a, wherein the temperature sensors 7 of the first temperature sensor group are assigned to the power semiconductor elements 6 of the second electronic assembly 1b and are connected via thermal connection elements 8 to a respective one of the power semiconductor elements 6 of the second electronic assembly 1b, wherein the power semiconductor elements 6 of the second electronic assembly 1b are fixed at the substrate 5 of the second electronic assembly (the substrate being different from the substrate 5 of the first electronic assembly 1 a). Furthermore, a second group of temperature sensors 7 is shown, which are connected to the base surface of the base 5 of the first electronic assembly 1a via a second fastening element 11b and which are associated with the power semiconductor elements 6 of the third electronic assembly 1c, wherein the temperature sensors 7 are each thermally connected to the power semiconductor elements 6 via a thermal connection element 8. The power semiconductor element 6 of the third electronic assembly 1c is fixed at the base 5 of the third electronic assembly 1c (which is different from the base 5 of the first electronic assembly 1a and the base 5 of the second electronic assembly 1 b).
Furthermore, a third group of temperature sensors 7 is shown, which are connected to the base surface of the base 5 of the first electronic assembly 1a via third fastening elements 11c and which are associated with the power semiconductor elements 6 of the first electronic assembly 1a and are connected to them via thermal connection elements 8, respectively. The power semiconductor element 6 of the first electronic assembly 1a is fixed at the base 5 of the first electronic assembly 1 a.
From the overview of fig. 5a, 5b and 5c and also fig. 6, the number and arrangement of the temperature sensors 7 or temperature sensor groups can be freely selected.
List of reference numerals
1. Electronic assembly
2. Carrier layer
3. A first conductive layer of a substrate
4. Second conductive layer of substrate
5. Substrate
6. Power semiconductor element
7. Temperature sensor
8. Thermal connection element
9. Signal line
10. Column element
11. Fixing element
12. Fixing section
13. A first volume region
14. Second volumetric region
15. Connection layer
Z z direction
X x direction
Claims (10)
1. An electronic assembly, comprising:
at least one power semiconductor element (6),
-At least one temperature sensor (7), and
-At least one substrate (5),
Wherein the at least one temperature sensor (7) and the at least one power semiconductor element (6) are fixed at the substrate (5) or at different substrates (5) in sections different from each other,
It is characterized in that the method comprises the steps of,
The at least one power semiconductor element (6) and the at least one temperature sensor (7) are connected via at least one thermal connection element (8).
2. An electronic assembly according to claim 1, characterized in that the temperature sensor (7) is connected to the base (5) via a stud element (10).
3. The electronic assembly according to any of the preceding claims, characterized in that the temperature sensor (7) is at a distance from a substrate surface that is greater than the distance of the at least one power semiconductor element (6) from the substrate surface.
4. An electronic assembly according to any of claims 2-3, characterized in that at least a part of the at least one power semiconductor element (6) and the pillar element (10) are embedded in a molding material.
5. The electronic assembly according to any of the preceding claims, characterized in that the stud element (10) is connected with the base (5) via a fixing element (11).
6. The electronic assembly according to any of the preceding claims, characterized in that at least one signal line (9) is connected with the temperature sensor (7), wherein the at least one signal line (9) extends away from the temperature sensor (7) and the power semiconductor element (6).
7. The electronic assembly according to any of the preceding claims, characterized in that the electronic assembly (1) comprises a set of at least two power semiconductor elements (6), wherein the power semiconductor element-set is assigned at least one temperature sensor (7), wherein the power semiconductor elements (6) of the power semiconductor element-set and the temperature sensors (7) of the temperature sensor-set are fixed at the substrate (5) in sections different from each other.
8. An electronic assembly according to any of the preceding claims, characterized in that a plurality of stud elements (10) are connected to the base (5) via a common fixing element (11).
9. The electronic assembly according to any of the preceding claims, characterized in that the temperature sensor (7) has at least one signal-coupling region for a signal interface, wherein the coupling region for the thermal connection element (8) is different from the at least one signal-coupling region.
10. Method for producing an electronic assembly (1), wherein at least one power semiconductor element (6), at least one temperature sensor (7) and at least one substrate (5) are provided, wherein the at least one power semiconductor element (6) and the at least one temperature sensor (7) are fixed at the substrate (5) or at different substrates (5) in sections different from each other, wherein the at least one power semiconductor element (6) is connected to the temperature sensor (7) via at least one thermal connection element (8).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102022211818.9A DE102022211818A1 (en) | 2022-11-09 | 2022-11-09 | Electronic assembly and method for producing an electronic assembly |
| DE102022211818.9 | 2022-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118016612A true CN118016612A (en) | 2024-05-10 |
Family
ID=90956918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311484994.4A Pending CN118016612A (en) | 2022-11-09 | 2023-11-09 | Electronic assembly and method for manufacturing an electronic assembly |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN118016612A (en) |
| DE (1) | DE102022211818A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19630902B4 (en) | 1996-08-01 | 2005-07-14 | Ixys Semiconductor Gmbh | Device for temperature monitoring in a power electronic device |
| DE10125694A1 (en) | 2001-05-25 | 2003-01-02 | Eupec Gmbh & Co Kg | Semiconductor module with temperature sensor e.g. for thermal overload protection, has thermal bridge provided between first and second carriers |
| DE102007052630B4 (en) | 2007-11-05 | 2019-08-14 | Infineon Technologies Ag | Power semiconductor module with temperature sensor |
| US8057094B2 (en) | 2007-11-16 | 2011-11-15 | Infineon Technologies Ag | Power semiconductor module with temperature measurement |
| DE102010050315C5 (en) | 2010-11-05 | 2014-12-04 | Danfoss Silicon Power Gmbh | Process for the production of sintered electrical assemblies and power semiconductor modules made therewith |
| JP6150995B2 (en) | 2012-09-11 | 2017-06-21 | 東芝メディカルシステムズ株式会社 | Medical device and X-ray high voltage device |
-
2022
- 2022-11-09 DE DE102022211818.9A patent/DE102022211818A1/en active Pending
-
2023
- 2023-11-09 CN CN202311484994.4A patent/CN118016612A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE102022211818A1 (en) | 2024-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10283440B2 (en) | Semiconductor device and manufacturing method of semiconductor device | |
| US9370113B2 (en) | Power semiconductor module with current sensor | |
| CN102364345B (en) | Circuit arrangement with shunt resistor and semiconductor module with corresponding power | |
| JP5736226B2 (en) | Method for determining the temperature of a power semiconductor | |
| US7857509B2 (en) | Temperature sensing arrangements for power electronic devices | |
| US9559024B2 (en) | Power semiconductor module | |
| JP5517988B2 (en) | Engine starter | |
| CN118016612A (en) | Electronic assembly and method for manufacturing an electronic assembly | |
| US10418307B2 (en) | Electronic assembly with a direct bonded copper substrate | |
| CN111162057B (en) | Semiconductor power device and power processing assembly for semiconductor power device | |
| CN118016607A (en) | Electronic component and method for producing an electronic component | |
| JP7345445B2 (en) | semiconductor equipment | |
| WO2024117119A1 (en) | Temperature sensor | |
| JPH04102365A (en) | Diode | |
| JP2024077876A (en) | Temperature Sensor | |
| CN116157662A (en) | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers | |
| EP4302057A1 (en) | Power module and method for producing a power module | |
| JP2023519835A (en) | power module | |
| CN117805569A (en) | Accurate and fast power module property assessment | |
| JP2022117606A (en) | Semiconductor device and temperature measurement method | |
| CN117059608A (en) | Semiconductor device and degradation determination method for semiconductor device | |
| JP2020205326A (en) | Semiconductor device | |
| KR20130005387A (en) | Power semiconductor package including the thermistor with optimal heat sensing efficiency and the method for fabricating the package | |
| JPH098323A (en) | Static induction transistor with temperature sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination |