CN117980530A - 化学气相沉积方法和涂层 - Google Patents
化学气相沉积方法和涂层 Download PDFInfo
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- CN117980530A CN117980530A CN202280062891.6A CN202280062891A CN117980530A CN 117980530 A CN117980530 A CN 117980530A CN 202280062891 A CN202280062891 A CN 202280062891A CN 117980530 A CN117980530 A CN 117980530A
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- 238000000576 coating method Methods 0.000 title claims abstract description 67
- 239000011248 coating agent Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000005229 chemical vapour deposition Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000003518 caustics Substances 0.000 claims abstract description 16
- 150000003839 salts Chemical class 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- 238000013019 agitation Methods 0.000 claims abstract description 8
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000011343 solid material Substances 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims description 2
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- VIDTVPHHDGRGAF-UHFFFAOYSA-N selenium sulfide Chemical compound [Se]=S VIDTVPHHDGRGAF-UHFFFAOYSA-N 0.000 claims description 2
- 229960005265 selenium sulfide Drugs 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
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- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 8
- 239000012530 fluid Substances 0.000 description 8
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- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical class C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 4
- 239000005977 Ethylene Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910000619 316 stainless steel Inorganic materials 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
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- 230000015556 catabolic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
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- 238000007306 functionalization reaction Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- ACECBHHKGNTVPB-UHFFFAOYSA-N silylformic acid Chemical class OC([SiH3])=O ACECBHHKGNTVPB-UHFFFAOYSA-N 0.000 description 2
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical class C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- ADKPKEZZYOUGBZ-UHFFFAOYSA-N [C].[O].[Si] Chemical compound [C].[O].[Si] ADKPKEZZYOUGBZ-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- FEGOYKQNJDNMBE-UHFFFAOYSA-N [Si].[C].[F] Chemical compound [Si].[C].[F] FEGOYKQNJDNMBE-UHFFFAOYSA-N 0.000 description 1
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical class Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical class CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical class CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical class CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical class CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical class CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- XSHGQODRSIIXGT-UHFFFAOYSA-N n-[[dimethylamino(dimethyl)silyl]-dimethylsilyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)[Si](C)(C)N(C)C XSHGQODRSIIXGT-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本申请公开了涂覆制品、包括该涂覆制品的系统以及施加涂层以形成该涂覆制品的方法。该涂覆制品包括基材和基材上的涂层。该涂层包括硅、碳和氢。在被暴露于使用苛性盐的水溶液进行的超声搅拌之后,该涂层的暴露后水接触角保持高于80度、或保持大于暴露前水接触角的60%、或保持高于80度且保持大于暴露前水接触角的60%。
Description
优先权
本申请为国际专利合作条约专利申请,其要求2021年8月24日提交的题为“化学气相沉积方法和涂层(CHEMICAL VAPOR DEPOSITION PROCESS AND COATING)”的美国临时专利申请No.63/236,413的优先权和权益,该美国临时专利申请的全部内容被通过参引结合到本文中。
技术领域
本发明涉及涂覆制品、包括涂覆制品的系统以及生产涂覆制品的涂覆方法。更具体地,本发明涉及含有硅、碳和氢的涂层。
背景技术
涂层通常易于受到苛性盐(例如氢氧化钠或氢氧化钾)的侵蚀。这种侵蚀使疏水性降低,导致溶解或物理降解或者其他缺点。涉及“半导体制造方法(SemiconductorFabriction Process)”的美国专利No.9,340,880中描述了一个示例,该美国专利的全部内容被通过参引结合到本文中。在该半导体制造方法的涂层中,该涂层的缺点是不耐受在进行超声搅拌的情况下在高温(79.44℃)下于5-10%的NaOH水溶液(按重量/体积计)中进行的20分钟的清洗循环。
与现有技术相比,表现出一种或更多种改进的涂层将会是本领域所期许的。
发明内容
在一个实施例中,涂覆制品包括基材和基材上的涂层。该涂层包括硅、碳和氢。在暴露于使用苛性盐的水溶液进行的超声搅拌之后,涂层的暴露后水接触角保持高于80度、保持大于暴露前水接触角的60%或两者。
在另一实施例中,系统包括涂覆制品。该涂覆制品包括基材和基材上的涂层。该涂层包括硅、碳和氢。在暴露于使用苛性盐的水溶液进行的超声搅拌之后,涂层的暴露后水接触角保持高于80度、或保持大于暴露前水接触角的60%、或保持高于80度且保持大于暴露前水接触角的60%。
在另一实施例中,一种方法包括将涂层施加至该涂覆制品。该涂覆制品包括基材和基材上的涂层。该涂层包括硅、碳和氢。在暴露于使用苛性盐的水溶液进行的超声搅拌之后,该涂层的暴露后水接触角保持高于80度、或保持大于暴露前水接触角的60%、或保持高于80度且保持大于暴露前水接触角的60%。
从下面结合附图进行的更位详细的描述,本发明的其他特征和优点将变得显而易见,这些附图通过示例的方式示出了本发明的原理。
附图说明
图1是根据本公开的与第一示例相一致的对比示例的FT-IR图。
图2是根据本公开的与第二示例相一致的对比示例的FT-IR图。
图3是根据本公开的与第三示例相一致的实施例的FT-IR图。
图4是根据本公开的与第四示例相一致的实施例的FT-IR图。
图5是根据本公开的与第五示例相一致的对比示例的FT-IR图。
图6是根据本公开的实施例的包含示例性涂覆制品的示例性系统。
在全部附图中将尽可能使用相同的附图标记来表示相同的部件。
具体实施方式
提供了不存在现有技术缺陷的涂层、涂覆部件以及使用所述涂覆部件的方法。例如,相较于并未包括本文所公开的特征中的一个或更多个特征的概念,本公开的实施例耐受来自苛性溶液的化学侵蚀和降解损失,将一部分保持在表面和/或本体内、提供低表面能和高水接触角、耐受与苛性物质的反应性、保留提供低表面能和疏水性的化学性质或其组合。
参考图6,根据一个实施例,涂层603位于部件609的基材601上,例如,其被用在用于执行生产产品607的过程的系统600中。在暴露于在进行超声搅拌的情况下在高温(79.44℃)下于苛性盐605的水溶液(例如,5-10%的NaOH水溶液(按重量/体积计)或KOH)中进行的至少20分钟的清洗循环后,涂层603保持外观、厚度和水接触角。如下文的示例部分中所述,图3和图4示出了涂层603的具体实施例的FT-IR图;图1、图2和图5示出了对比涂层的FT-IR图。
响应于暴露于苛性盐605(例如,NaOH、KOH或类似的苛性盐),涂层603保持初始接触角的至少62%、初始接触角的至少70%、初始接触角的至少80%、初始接触角的至少85%、初始接触角的60%至90%、初始接触角的80%至90%、初始接触角的85%至90%、初始接触角的88%至90%或其中任何适用的组合、子组合、范围或子范围。另外或作为替代,响应于暴露于苛性盐605,涂层603的接触角高于80、高于81、高于82、高于83、高于84、高于85、介于80与90之间、介于80与88之间、介于80与87之间、介于82与87之间、介于85与87之间或其中任何适用的组合、子组合、范围或子范围。
基材601是能够以热化学气相沉积方法进行加工的任何材料。本公开的实施例包括以温度范围、前体引入顺序、压力范围和饱和/渗透持续时间的循环操作的热化学气相沉积方法。通过具有静态/脉冲周期(例如,前体在不流过烘箱中的化学气相沉积容器的情况下被加热的周期),这种循环允许将涂层603施加至简单的几何结构(例如,其具有能够利用现场线(line-of-site)技术进行涂覆的表面)和复杂的几何结构(例如,其具有无法通过现场线技术进行涂覆的三维面貌)。
例如,适用的材料耐受如下热条件:高于200℃、高于300℃、高于350℃、高于370℃、高于380℃、高于390℃、高于400℃、高于410℃、高于420℃、高于430℃、高于440℃、高于450℃、高于500℃、介于300℃与450℃之间、介于350℃与450℃之间、介于380℃与450℃之间、介于300℃与500℃之间、介于400℃与500℃之间或者其中任何适用的组合、子组合、范围或子范围。
在一个实施例中,基材601为不锈钢,例如300系列不锈钢(例如,316不锈钢、316L不锈钢或304不锈钢)或400系列不锈钢。在另一实施例中,基材601是铝合金,例如1000系列铝合金、3000系列铝合金、4000系列铝合金或6000系列铝合金。其他适用类型的材料包括 铂和铂合金、钛和钛合金及其组合。
基材601可具有能够被卷收(furl)的任何至少部分柔性的结构。例如,适用于基材601的结构包括金属片、多孔、无孔、编织布、穿孔箔、网格结构及其组合。如本文所用,术语“卷收”及其语法变化形式是指以线圈状取向卷起或包裹。符合本文定义的卷收物品的示例包括金属线圈、卷板织物(bolt of fabric)、缠绕在桅杆上的帆、缠绕的金属丝和遮光帘(window blind)。术语“卷收”并不限于紧密卷绕。
为了进行化学气相沉积,使用前体流体。该前体流体是液体或气体(但不是等离子体)并且给予化学成分以在化学气相沉积室内产生涂层601。该化学气相沉积室是封闭容器。
前体流体或官能剂在单次循环或多次循环中循环,例如,采用中间吹扫(例如,使用惰性气体,例如氮气、氦气和/或氩气)。适用的循环数包括两次循环、三次循环、四次循环、五次循环、六次循环、七次循环、八次循环、九次循环、十次循环、十一次循环、十二次循环、十三次循环、十四次循环、十五次循环、十六次循环或者其中任何适用的组合、子组合、范围或子范围。
前体流体可以是以下流体中的一种或更多种:硅烷、硅烷和乙烯、硅烷和氧化剂、二甲基硅烷、二甲基硅烷和氧化剂、三甲基硅烷、三甲基硅烷和氧化剂、二氢化二烷基甲硅烷、三氢化烷基甲硅烷、非自燃物质(例如,二氢化二烷基甲硅烷和/或三氢化烷基甲硅烷)、热反应材料(例如,碳硅烷和/或羧基硅烷,诸如无定形碳硅烷和/或无定形羧基硅烷)、能够重组碳甲硅烷基(二甲硅烷基或三甲硅烷基片段)的物质、甲基三甲氧基硅烷、甲基三乙氧基硅烷、二甲基二甲氧基硅烷、二甲基二乙氧基硅烷、三甲基甲氧基硅烷、三甲基乙氧基硅烷、氨、肼、三甲硅烷基胺、双(叔丁基氨基)硅烷、1,2-双(二甲氨基)四甲基乙硅烷、二氯硅烷、六氯乙硅烷、有机氟三烷氧基硅烷、有机氟硅烷基氢化物、有机氟甲硅烷基、氟烷氧基硅烷、氟烷基硅烷、氟硅烷、十三氟1,1,2,2-四氢辛基硅烷、((三十氟-1,1,2,2-四氢辛基)三乙氧基硅烷、三乙氧基(3,3,4,4,5,5,6,6,7,7,8,8,8-十三氟-1-辛基)硅烷、(全氟己基乙基)三乙氧基硅烷、硅烷(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-十七氟癸基)三甲氧基-或其组合。
在一个实施例中,使用纯(100%)乙烯作为前体流体的官能剂。作为替代,乙烯的体积浓度大于50%、大于60%、大于70%、大于80%、大于90%、大于95%、大于99%、介于60%与100%之间、介于80%与100%之间、介于90%与100%之间或者其中任何适用的组合、子组合、范围或子范围。在其他实施例中,前体流体的其余成分是氩气、氪气、氦气、氮气、氙气、氢气或其组合。
在一个实施例中,涂层603被利用如下流体分压而产生:介于10托与100托之间、介于10托与50托之间、介于10托与300托之间、介于200托与300托之间、介于100托与1,500托之间、介于100托与300托之间、介于200托与400托之间、介于300托与500托之间、介于600托与800托之间、介于500托与1,000托之间、介于500托与1,500托之间、介于1,000托与1,500托之间、介于500托与3,000托之间、介于1,500托与2,500托之间、介于1,000托与3,500托之间、小于1,500托、小于1,000托、小于500托、小于300托或其中任何适用的组合、子组合、范围、或子范围。
在一个实施例中,涂层603被利用被保持如下时间的温度和压力产生:至少10分钟、至少20分钟、至少30分钟、至少45分钟、至少1小时、至少2小时、至少3小时、至少4小时、至少5小时、至少7小时、介于10分钟与1小时之间、介于20分钟与45分钟之间、介于4小时与10小时之间、介于6小时与8小时之间、介于4小时与20小时之间、介于10小时与20小时之间或者其中任何适用的组合、子组合、范围或子范围。
涂层603的适用厚度包括介于100纳米与10,000纳米之间、介于100纳米与1,000纳米之间、介于100纳米与800纳米之间、介于200纳米与600纳米之间、介于200纳米与10,000纳米之间、介于500纳米与3,000纳米之间、介于500纳米与2,000纳米之间、介于500纳米与1,000纳米之间、介于1,000纳米与2,000纳米之间、介于1,000纳米与1,500纳米之间、介于1,500纳米与2,000纳米之间、800纳米、1,200纳米、1,600纳米、1,900纳米或者其中任何适用的组合、子组合、范围或子范围。其他实施例包括在涂层603上的任意单个点处、在涂层603的所有部分上(例如,具有涵盖厚度变化的范围)、和/或在涂层603的区域上(例如,一个表面、多个表面、边缘/角、不能通过现场线技术涂覆的所有或一些部分、和/或能够通过现场线技术涂覆的所有或一些部分)的厚度。
涂层603的适用组成包括涂层603为非晶硅涂层、含硅-氧-碳涂层、含硅-氮涂层、含硅-氟-碳涂层或其组合。其他实施例包括具有碳官能化的涂层603。
根据本公开的实施例,系统600提供了对于选自由如下各项组成的组的操作的控制:工业方法、能源技术、信息技术、消费电子、医疗诊断、照明技术、运输技术、通信技术及其组合。
在另一实施例中,系统600产生二端子器件、三端子器件、四端子器件或其组合。在一个实施例中,二端子器件是或包括交流二极管(DIAC)、整流二极管、耿氏二极管、碰撞电离雪崩渡越时间二极管(IMPATT二极管)、激光二极管、发光二极管、光电池、PIN(P型、本征和N型材料)二极管、肖特基二极管、太阳能电池、隧道二极管、齐纳二极管及其组合。在一个实施例中,二端子器件是或者包括双极晶体管、达林顿晶体管、场效应晶体管、绝缘栅双极晶体管、可控硅整流器、晶闸管、交流三极管(TRIAC)、单结晶体管及其组合。
在一个实施例中,系统600产生多端子器件,这些多端子器件包括或者是集成电路、电荷耦合器件、微处理器、随机存取器、只读存储器及其组合。
在一个实施例中,系统600的产品607具有固体材料,该固体材料包括键合在一起的各个原子的规则的周期性结构。另外或作为替代,在一个实施例中,产品607是结晶固体材料、多晶固体材料、非晶材料、本征半导体、非本征半导体或其组合。
在一个实施例中,系统600产生掺杂有负电荷导体、正电荷导体或两者的半导体。
在一个实施例中,由系统600产生的半导体是或包括硅、锗、碳、锑化铟、砷化铟、磷化铟、磷化镓、锑化镓、砷化镓、碳化硅、氮化镓、硅锗、硫化硒及其组合。
示例
在第一对比示例和第二对比示例中,第一对比涂层和第二对比涂层由二甲基硅烷(DMS)的热化学气相沉积产生。
在第三示例和第四示例中,与本公开的实施例相一致,涂层603通过二甲基硅烷(DMS)的热化学气相沉积接着在升高的温度下用纯乙烯进行表面官能化来产生。在第三示例中,涂层603位于基材601的镜面抛光(ASTM A480,400粒度/4-8微英寸粗糙度)侧上。在第四示例中,涂层603位于基材601的粗糙表面侧(ASTM A480,120粒度/40-60微英寸粗糙度)。在第三示例和第四示例中,基材601是22规格厚度的316不锈钢。
在与涉及“半导体制造方法(Semiconductor Fabrication Process)”的美国专利No.9,340,880(该专利的全部内容被通过参引结合到本文中)相一致的第五对比示例中,第五对比涂层由二甲基硅烷(DMS)的热化学气相沉积接着使用三甲基硅烷进行热氧化和官能化产生。
将五种涂层暴露于在采用超声搅拌在高温(79.44℃)下于按重量/体积计5-10%的NaOH水溶液中进行的20分钟的清洗循环。如下所示,在该暴露前后获得水接触角,示出了相对稳定性(或相对稳定性的缺乏):
第一对比涂层和第二对比涂层示出了不均匀的涂层损失。第三涂层未示出视觉变化,尽管接触角略有减小。第四涂层示出了一些不均匀的涂层损失。第五对比涂层几乎完全丧失涂层。
图1-5示出了每个示例在清洗循环之前101和之后103的FT-IR,其表明了相对稳定性(或相对稳定性的缺乏)。
虽然已经参考一个或更多个实施例对本发明进行了描述,但是本领域技术人员将理解,在不脱离本发明的范围的情况下,可以做出各种改变并且可以用等同物替代其要素。另外,可以进行许多修改以使具体情况或材料适应于本发明的教导而并不背离其本质范围。因此,意图是,本发明并不限于作为实施本发明的最佳方式而公开的具体实施例,而是本发明将包括落入到所附权利要求的范围内的所有实施例。此外,在详细的说明书中认定的所有数值都应被解释为精确值和近似值均被明确认定。
Claims (20)
1.一种涂覆制品,包括:
基材;
所述基材上的涂层;
其中,所述涂层包括硅、碳和氢;
其中,在被暴露于使用苛性盐的水溶液进行的超声搅拌至少20分钟之后,所述涂层的暴露后水接触角保持高于80度、或保持大于暴露前水接触角的60%、或保持高于80度且保持大于暴露前水接触角的60%。
2.如权利要求1所述的涂覆制品,其中,所述至少20分钟处于至少79℃的温度下。
3.如权利要求1所述的涂覆制品,其中,所述苛性盐是NaOH。
4.如权利要求1所述的涂覆制品,其中,所述苛性盐是KOH。
5.如权利要求1所述的涂覆制品,其中,所述苛性盐的单位体积重量介于5%与10%之间。
6.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统提供了对于选自由如下各项组成的组的操作的控制:工业方法、能源技术、信息技术、消费电子、医疗诊断、照明技术、运输技术、通信技术及其组合。
7.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生二端子器件、三端子器件、四端子器件或其组合。
8.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生二端子器件,所述二端子器件选自由如下各项组成的组:交流二极管(DIAC)、整流二极管、耿氏二极管、碰撞电离雪崩过渡二极管(IMPATT二极管)、激光二极管、发光二极管、光电池、PIN(P型、本征和N型材料)二极管、肖特基二极管、太阳能电池、隧道二极管、齐纳二极管及其组合。
9.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生三端子器件,所述三端子器件选自由如下各项组成的组:双极晶体管、达林顿晶体管、场效应晶体管、绝缘栅双极晶体管、可控硅整流器、晶闸管、交流三极管(TRIAC)、单结晶体管及其组合。
10.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生多端子器件,所述多端子器件选自由如下各项组成的组:集成电路、电荷耦合器件、微处理器、随机存取器、只读存储器及其组合。
11.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生具有固体材料的产品,所述固体材料包括键合在一起的各个原子的规律的、周期性结构。
12.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生结晶固体材料。
13.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生多晶固体材料。
14.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生非晶材料。
15.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生本征半导体。
16.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生非本征半导体。
17.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生掺杂有负电荷导体、正电荷导体或两者的半导体。
18.一种包括如权利要求1所述的涂覆制品的系统,其中,所述系统产生选自由如下各项组成的组的半导体:硅、锗、碳、锑化铟、砷化铟、磷化铟、磷化镓、锑化镓、砷化镓、碳化硅、氮化镓、硅锗、硫化硒及其组合。
19.一种将涂层施加至如权利要求1所述的基材上的方法。
20.一种涂覆制品,包括:
基材;
所述基材上的涂层;
其中,所述涂层包括硅、碳和氢;
其中,在被暴露于使用苛性盐的水溶液在至少79℃的温度下进行的超声搅拌之后,所述涂层的暴露后水接触角保持高于80度、或保持大于暴露前水接触角的60%、或保持高于80度且保持大于暴露前水接触角的60%。
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US6511760B1 (en) * | 1998-02-27 | 2003-01-28 | Restek Corporation | Method of passivating a gas vessel or component of a gas transfer system using a silicon overlay coating |
US6444326B1 (en) * | 1999-03-05 | 2002-09-03 | Restek Corporation | Surface modification of solid supports through the thermal decomposition and functionalization of silanes |
US9340880B2 (en) | 2009-10-27 | 2016-05-17 | Silcotek Corp. | Semiconductor fabrication process |
SG11202105663XA (en) * | 2018-11-29 | 2021-06-29 | Silcotek Corp | Fluid contact process, coated article, and coating process |
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2022
- 2022-08-18 CN CN202280062891.6A patent/CN117980530A/zh active Pending
- 2022-08-18 KR KR1020247008497A patent/KR20240045304A/ko unknown
- 2022-08-18 WO PCT/US2022/040763 patent/WO2023027942A1/en active Application Filing
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