CN117954958A - Laser chip and laser - Google Patents
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- CN117954958A CN117954958A CN202410346300.9A CN202410346300A CN117954958A CN 117954958 A CN117954958 A CN 117954958A CN 202410346300 A CN202410346300 A CN 202410346300A CN 117954958 A CN117954958 A CN 117954958A
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- 230000008878 coupling Effects 0.000 claims abstract description 185
- 238000010168 coupling process Methods 0.000 claims abstract description 185
- 238000005859 coupling reaction Methods 0.000 claims abstract description 185
- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 238000002834 transmittance Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000005253 cladding Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
The invention relates to a laser chip and a laser, belonging to the technical field of semiconductor lasers; the waveguide structure comprises a high-transmission part and a high-reflection part which are respectively arranged on two opposite end surfaces of the waveguide, wherein the waveguide with the high-transmission part and the high-reflection part is used as a main waveguide, and at least one of two sides of a connecting line of the high-transmission part and the high-reflection part is also provided with another waveguide which is used as a coupling waveguide adjacently at a certain distance so as to form an area for light field energy coupling between the main waveguide and the coupling waveguide; the length of the coupling waveguide is an even-numbered multiple of the coupling length of the optical field for maximum power transfer when coupling between the main waveguide and the coupling waveguide. On the basis of the single-mode transmission characteristic of the light waves of the laser chip, the gain area of the laser chip is increased by forming the area for the energy coupling of the light field between the main waveguide and the coupling waveguide and by using the light field coupling of the main waveguide and the coupling waveguide to enable the coupling waveguide to serve as a part of the main waveguide laser cavity, so that the increase of the light output power of the laser chip is realized.
Description
Technical Field
The invention relates to a laser chip and a laser, and belongs to the technical field of semiconductor lasers.
Background
With the development of silicon photonics and silicon optical integrated devices, silicon photonics chips are increasingly used in the fields of telecommunication, digital communication, microwave photonics and the like. Since silicon is an indirect bandgap material and cannot emit light efficiently, a hybrid integrated DFB laser (Distributed Feedback Laser ) becomes the primary light source for silicon light integration.
The loss caused by the increasing functional structures and the increasing integration scale of silicon optical integration is also huge. To compensate for the loss of integrated devices on the chip, DFB lasers are required to have more power, i.e., greater volume of the laser chip active area. If the size of the waveguide is increased to increase the volume of the active region, the original optical wave single-mode transmission characteristic of the laser chip is changed into a multimode transmission characteristic. The laser chip of the laser is a semiconductor device which takes semiconductor materials as gain media and adopts an electric pumping mode to generate laser. The laser chip is used as the core of the laser, the two opposite end surfaces of the waveguide in the laser chip are respectively provided with a high-transmittance part and a high-reflection part, the end surface where the high-transmittance part is positioned is defined as a light emitting surface, and the end surface where the high-reflection part is positioned is defined as a backlight surface.
At present, the power of the single-mode continuous wave DFB laser is improved mainly through the parameter optimization of each part such as quantum wells, cavity lengths, respectively limiting layers, waveguide layers and the like. For example: the gradual change type limiting layers are adopted to enhance the limitation of carriers so as to improve the injection efficiency; an asymmetric waveguide structure is adopted to reduce the optical loss by reducing the overlapping of an optical field and a P-type doped region; the effective spot size is enlarged by increasing the waveguide thickness to prevent damage to the laser facet at high power, etc. These methods increase the output power of DFB lasers to some extent, but due to single mode limitations the gain region is always limited to a narrower waveguide width, resulting in limited increases in output power.
Disclosure of Invention
The invention aims to provide a laser chip and a laser device, which are used for solving the problem that the light output power of the existing laser chip is limited due to single-mode limitation.
In order to achieve the above object, the present invention provides a method comprising:
The invention relates to a laser chip, which comprises a waveguide, wherein a high-transmission part and a high-reflection part are respectively arranged on two opposite end surfaces of the waveguide, the waveguide with the high-transmission part and the high-reflection part is used as a main waveguide, and at least one of two sides of a connecting line of the high-transmission part and the high-reflection part is also provided with another waveguide which is used as a coupling waveguide adjacently at a certain distance so as to form an area for light field energy coupling between the main waveguide and the coupling waveguide; the length of the coupling waveguide is the coupling length of the maximum power transfer when the optical field with even times of the length is coupled between the main waveguide and the coupling waveguide; the coupling length is determined according to the coupling mode theory of the waveguide, and is calculated by the following formula:
in the method, in the process of the invention, For the coupling length,/>Is the coupling coefficient between the main waveguide and the coupling waveguide,/>Is the phase constant of the main waveguide,/>Is the phase constant of the coupling waveguide.
Further, a spacing between the main waveguide and the coupling waveguide is less than or equal to 500 nanometers.
Further, the high-transmission part and the high-reflection part are arranged at two ends beyond the two ends of the coupling waveguide.
Further, the main waveguide and the coupling waveguide are arranged in parallel.
The invention relates to a laser, which comprises a laser chip, wherein the laser chip comprises a waveguide, a high-transmittance part and a high-reflection part are respectively arranged on two opposite end surfaces of the waveguide, the waveguide with the high-transmittance part and the high-reflection part is used as a main waveguide, and at least one of two sides of a connecting line of the high-transmittance part and the high-reflection part is also provided with another waveguide which is used as a coupling waveguide adjacently at a certain distance, so that an area for light field energy coupling is formed between the main waveguide and the coupling waveguide; the length of the coupling waveguide is the coupling length of the maximum power transfer when the optical field with even times of the length is coupled between the main waveguide and the coupling waveguide; the coupling length is determined according to the coupling mode theory of the waveguide, and is calculated by the following formula:
in the method, in the process of the invention, For the coupling length,/>Is the coupling coefficient between the main waveguide and the coupling waveguide,/>Is the phase constant of the main waveguide,/>Is the phase constant of the coupling waveguide.
Further, a spacing between the main waveguide and the coupling waveguide is less than or equal to 500 nanometers.
Further, the high-transmission part and the high-reflection part are arranged at two ends beyond the two ends of the coupling waveguide.
Further, the main waveguide and the coupling waveguide are arranged in parallel.
The invention has the beneficial effects that:
The invention provides a laser chip and a laser, which are improved on the structure of the existing laser chip, in particular to a structure which is improved on the basis of the single-mode transmission characteristic of the laser chip light wave, by adding another waveguide serving as a coupling waveguide on the existing laser chip with a main waveguide, so that the laser chip is provided with waveguides which are adjacently arranged at a certain distance, namely, the coupling waveguide is arranged at least one side of the two sides of a connecting line of a high transmission part and a high reflection part, the main waveguide and the coupling waveguide are arranged at a certain distance so as to form a region for light field energy coupling between the main waveguide and the coupling waveguide, the length of the coupling waveguide is set so that the light field in the coupling waveguide can finally return to the main waveguide, the structure can form a region for light field energy coupling between the main waveguide and the coupling waveguide which are adjacently arranged on the basis of the single-mode transmission characteristic of the laser chip light wave, and the coupling waveguide is used as a part of a main waveguide laser cavity through the light field coupling of the main waveguide and the coupling waveguide, so that the gain region is not limited to be narrower in the width of the waveguide, and the effective volume of the active region of the laser chip is increased, and the light output power of the laser chip is increased. The length of the coupling waveguide is an even number times of the coupling length, and the coupling length is determined according to the coupling mode theory of the waveguide.
Drawings
FIG. 1 is a schematic cross-sectional view of a laser chip according to an embodiment of the present invention, which is structurally parallel to a light exit surface (an end surface of a waveguide where a high-transmittance film is located);
FIG. 2 is a top view of a laser chip structure according to an embodiment of the invention;
Fig. 3 is a schematic diagram of the line width narrowing principle according to the embodiment of the present invention.
Reference numerals illustrate:
1. an N electrode; 2. a substrate; 3. a buffer layer; 4. a lower cladding layer; 5. lower limiting layers respectively; 6. an active layer; 7. respectively limiting layers; 8. an etch stop layer; 9. a grating layer; 10. an upper cladding layer; 11. an ohmic contact layer; 12. a P electrode; 13. a main waveguide; 14. a coupling waveguide; 15. a passivation layer; 16. a high-permeability membrane; 17. high reflection film.
Detailed Description
In order to solve the problems in the background art, the invention provides a laser chip and a laser device for improving the structure of the existing laser chip, in particular to a laser chip with a main waveguide, which is added with another waveguide serving as a coupling waveguide, so that the laser chip is provided with waveguides (the main waveguide and the coupling waveguide which are adjacently arranged at a certain distance), namely, the coupling waveguide is arranged at least one side of the two sides of a high transmission part and a high reflection part connecting line, the main waveguide and the coupling waveguide are arranged at a certain distance so as to form a region for light field energy coupling between the main waveguide and the coupling waveguide, and the length of the coupling waveguide is set so that the light field in the coupling waveguide can finally return to the main waveguide, so that the structure can form a region for light field energy coupling between the main waveguide and the coupling waveguide which are adjacently arranged on the basis of the light wave single-mode transmission characteristic of the laser chip, and the coupling waveguide is used as a part of the main waveguide laser cavity through light field coupling of the main waveguide, so that the gain region of the laser chip is not limited to a narrower waveguide width, and the effective light output of the laser chip is increased. The length of the coupling waveguide is an even number times of the coupling length, and the coupling length is determined according to the coupling mode theory of the waveguide.
The present invention will be further described in detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent.
An embodiment of a laser:
The utility model provides a laser, including the laser chip, the laser chip includes the waveguide, be equipped with high portion of transmitting and high portion of reflecting on the both ends face of waveguide respectively, set up the both ends face of high portion of transmitting and high portion of reflecting and set up relatively, and regard the waveguide that has high portion of transmitting and high portion of reflecting as the main waveguide, the high portion of transmitting still is provided with another waveguide as the coupling waveguide adjacent with certain interval in the department of at least one side of high portion of reflecting line both sides, in order to form the region that supplies the light field energy to couple between main waveguide and coupling waveguide, through setting for the coupling length that the light field of coupling waveguide is the biggest power transfer when coupling between main waveguide and coupling waveguide, make the light field in the coupling waveguide finally can get back into in the main waveguide, so that this structure can be on the basis of laser chip light wave single mode transmission characteristic, make the coupling waveguide as the part of main waveguide, increase the gain region of laser chip, make the gain region not limited to narrower waveguide width, and then increase the effective volume of laser chip active region, realize the increase of laser chip light output.
The distance between the main waveguide and the coupling waveguide is reduced, and the coupling coefficient is increased, so that the distance between the two waveguides is only required to be taken into account, and the two waveguides are separated. The upper limit of the prescribed interval is to ensure that the coupling coefficient is not too small, the coupling length is not too large, the optical field can be coupled between the two waveguides for multiple times, and the volume of the active regions of the two waveguides can be fully utilized. Wherein the spacing between the two waveguides (main waveguide and coupling waveguide) can be adjusted according to the process capability.
In order to ensure efficient coupling of the optical field between the main waveguide and the coupling waveguide, the upper limit of the specified spacing, namely the spacing between the main waveguide and the coupling waveguide is less than or equal to 500 nanometers, so as to effectively increase the coupling efficiency and ensure that a stable area for efficient coupling of the optical field energy is formed between the main waveguide and the coupling waveguide.
Wherein, to ensure that the optical field in the coupling waveguide can finally return to the main waveguide, the length of the coupling waveguide is determined according to the theory of the coupling mode of the waveguide. I.e. the length of the coupling waveguide is an even multiple of the coupling length in order to bring the optical field coupled into the coupling waveguide eventually back into the main waveguide.
Specifically, according to the theory of coupling modes of waveguides, considering the condition of co-directional coupling of a main waveguide and a coupling waveguide, the calculation formula of the coupling length of the maximum power transfer when the optical field is coupled between the main waveguide and the coupling waveguide is as follows:
in the method, in the process of the invention, For the coupling length,/>Is the coupling coefficient between two waveguides,/>And/>The phase constants of the main waveguide and the coupling waveguide, respectively. The coupling length of the maximum power transfer when the optical field is coupled between the main waveguide and the coupling waveguide may be the coupling length of the maximum power transfer when the optical field is coupled from the main waveguide to the coupling waveguide, or the coupling length of the maximum power transfer when the optical field is coupled from the coupling waveguide to the main waveguide.
Considering the limitation of the existing technology for respectively plating the two end faces of the waveguide with the high-transmittance part and the high-reflection part, namely that the high-transmittance part and the high-reflection part are finally integrally evaporated on the laser chip, namely that the current technology level cannot select to be evaporated respectively, taking two waveguides as an example, when the two waveguides take the end faces of the respective shapes as end points and at least one of the two end points is aligned, at least one of the two end faces of the coupling waveguide can be evaporated, the laser chip can generate two laser outputs, namely that one single-mode laser output with large active volume is not generated, namely that the laser chip is not based on single-mode transmission characteristics; in order to avoid the occurrence of the above situation, the two ends where the high-transmittance part and the high-reflection part are located are arranged beyond the two ends of the coupling waveguide, that is, the light-emitting surface backlight surface of the main waveguide is arranged beyond the two end surfaces of the coupling waveguide.
Wherein the main waveguide and the coupling waveguide are arranged in parallel in order to maximize the effective coupling area therebetween.
Of course, there may be a slight tilt in the main waveguide and the coupling waveguide, with a negligible effect on coupling.
When the main waveguide and the coupling waveguide are arranged in parallel, the distance between the high-transmission part and the high-reflection part, which are the lengths of the main waveguide, is larger than the length of the coupling waveguide, and the two ends of the main waveguide (the two ends where the high-transmission part and the high-reflection part are located) extend beyond the two ends of the coupling waveguide (the two ends of the shape of the coupling waveguide, the end face is different from the side face, and the area of the end face is obviously smaller than the area of the side face) in the length direction of the main waveguide. The length of the coupling waveguide refers to the distance between the two end faces of the waveguide.
The high-permeability part can be a high-permeability film or a high lens; the high reflection portion may be a high reflection film or a high reflection mirror. The high-permeability part and the high-reflection part can be specifically selected according to actual requirements.
The main waveguide and the coupling waveguide are the whole body of the upper cladding layer and the ohmic contact layer, and specifically, the upper cladding layer is arranged above the grating layer, the ohmic contact layer is arranged above the upper cladding layer, and the whole body of the upper cladding layer and the ohmic contact layer is used as the waveguide. The main waveguide and the coupling waveguide are different in that the two end surfaces of the main waveguide are respectively provided with a high-transmission part and a high-reflection part, and the coupling waveguide is not arranged in the same way, so that the single-mode transmission characteristic of the existing laser chip is reserved.
For ease of understanding, a laser chip having one main waveguide and one coupling waveguide will be taken as an example, and a laser chip shown in fig. 1 can be specifically seen, where the laser chip is an N electrode (Negative Electrode ) 1, a substrate 2, a buffer layer 3, a lower cladding layer 4, a lower confinement layer 5, an active layer 6, an upper confinement layer 7, an etching stop layer 8, a grating layer 9, an upper cladding layer 10, an ohmic contact layer 11, and a P electrode (Positive Electrode ) 12 in this order from bottom to top; etching the ohmic contact layer 11 and the upper cladding layer 10, wherein the etching region is shown in the main waveguide 13 and the in-frame region of the other waveguide serving as the coupling waveguide 14 in fig. 2, and the main waveguide 13 and the other waveguide serving as the coupling waveguide 14 are respectively formed by the whole body of the two upper cladding layers 10 connected with the ohmic contact layer 11; preparing a passivation layer 15 above the ohmic contact layer 11, the etching region, the main waveguide 13 and the coupling waveguide 14, and exposing the upper surfaces of the main waveguide 13 and the coupling waveguide 14 by etching; the P electrode 12 is located on the upper surfaces of the main waveguide 13, the coupling waveguide 14, and the passivation layer 15. Fig. 1 is a schematic cross-sectional structure parallel to the light-emitting surface.
Wherein, the two end surfaces of the main waveguide 13 are respectively plated with a high-transmittance film 16 and a high-reflection film 17, the end surface of the waveguide where the high-transmittance film 16 is defined as a light emitting surface, and the end surface of the waveguide where the high-reflection film 17 is defined as a backlight surface. The high-permeability film 16 and the high-reflection film 17 are finally evaporated at two ends of the main waveguide of the laser chip.
If the length of the coupling waveguide is the same as that of the main waveguide, and the main waveguide and the coupling waveguide are disposed in parallel (i.e., the ends of the main waveguide and the coupling waveguide are aligned), two laser cavities are formed when the high-transmittance film 16 and the high-reflection film 17 are vapor deposited, and the coupling waveguide cannot be made to be a part of the main waveguide laser cavity through optical field coupling, so that the length of the coupling waveguide 14 is shorter than that of the main waveguide 13.
To ensure that the optical field couples between the two waveguides, the spacing between the two waveguides is typically no more than 500 nanometers (nm), and the length of the coupling waveguide 14 needs to be cut off at the point where the optical field couples back to the main waveguide 13. A top view of the laser chip is shown in fig. 2. The main body of the laser chip is located in the main waveguide 13, and the gain is provided by the main waveguide 13 and the coupling waveguide 14 through optical field coupling transmission between the main waveguide 13 and the coupling waveguide 14, so that the laser output is formed at the high-transmission film side of the main waveguide.
The laser of the above example is used as a high-power single-mode continuous wave laser used for silicon light integration and is also used as a directional coupling dual waveguide structure Distributed Feedback (DFB) laser, and the structure of the laser is that a directional coupling dual waveguide structure is adopted, so that the laser optical waveguide can be ensured to increase the gain area of a laser chip by forming an area for light field energy coupling between two waveguides which are adjacently arranged at a certain distance on the basis of single-mode transmission characteristics, the gain area is not limited to a narrower waveguide width, the effective volume of an active area is obviously increased, and the light output of the laser chip can be improved; meanwhile, due to wavelength sensitivity of the directional coupling structure, the structure can realize laser output with narrower linewidth.
The laser chip structure of the above example adopts a double waveguide, energy is coupled between the two waveguides through an optical field, and finally the energy is output from the antireflection cavity surface (high-transmittance film 16) through the main waveguide 13. Because of adopting the double waveguide structure, the two waveguides can both provide the gain of the active area, the effective volume of the active area can be obviously increased, and the light-emitting power of the laser chip can be improved.
Based on the characteristics of the laser chip of the DFB laser, two cavity surfaces are output, one side is wasted, the loss is large, and energy is reflected back into the laser cavity and output from the other end through evaporating a high-reflection film at one end, so that the energy loss is reduced.
The laser chip structure can realize a certain line width narrowing by adjusting the distance between the two waveguides and the length of the coupling waveguide 14. The line width narrowing principle of the laser chip provided by the invention is shown in figure 3: the directional coupling waveguide structure is a wavelength sensitive structure, the light-emitting power is highest at the designed wavelength, the light-emitting power of the wavelengths at two sides is gradually reduced, and the power of the wavelengths at two sides can be suppressed by designing the wavelength of the directional coupling waveguide structure at the initial center wavelength of the laser chip, so that the line width narrowing of the final light-emitting spectrum is realized.
As other embodiments, the laser chip structure may also be provided with another waveguide as a coupling waveguide adjacent to each other at two sides of the connection line of the high-transmittance portion and the high-reflection portion with a certain distance therebetween, and an area for coupling light field energy is formed between the main waveguide and the coupling waveguide, so as to increase the gain area of the laser chip.
An embodiment of a laser chip:
a laser chip has been described in detail in the embodiments of a laser, and will not be described here again.
Claims (8)
1. The laser chip comprises a waveguide, wherein a high-transmittance part and a high-reflection part are respectively arranged on two opposite end surfaces of the waveguide, and the laser chip is characterized in that the waveguide with the high-transmittance part and the high-reflection part is used as a main waveguide (13), and at least one of two sides of a connecting line of the high-transmittance part and the high-reflection part is also provided with another waveguide which is used as a coupling waveguide (14) adjacently at a certain distance so as to form a region for light field energy coupling between the main waveguide (13) and the coupling waveguide (14); the length of the coupling waveguide (14) is an even-numbered multiple of the coupling length of the maximum power transfer when the optical field is coupled between the main waveguide (13) and the coupling waveguide (14); the coupling length is determined according to the theory of the coupling mode of the waveguide, and is calculated by the following formula:
in the method, in the process of the invention, For the coupling length,/>For the coupling coefficient between the main waveguide (13) and the coupling waveguide (14)/>For the phase constant of the main waveguide (13)/>Is the phase constant of the coupling waveguide (14).
2. The laser chip according to claim 1, characterized in that the spacing between the main waveguide (13) and the coupling waveguide (14) is less than or equal to 500 nm.
3. The laser chip according to claim 1, wherein both ends of the high-transmittance portion and the high-reflectance portion are disposed beyond both ends of the coupling waveguide (14).
4. The laser chip according to claim 1, characterized in that the main waveguide (13) and the coupling waveguide (14) are arranged in parallel.
5. The laser comprises a laser chip, wherein the laser chip comprises a waveguide, and a high-transmission part and a high-reflection part are respectively arranged on two opposite end surfaces of the waveguide, and the laser chip is characterized in that the waveguide with the high-transmission part and the high-reflection part is used as a main waveguide (13), and at least one of two sides of a connecting line of the high-transmission part and the high-reflection part is also provided with another waveguide which is used as a coupling waveguide (14) adjacently at a certain distance so as to form a region for light field energy coupling between the main waveguide (13) and the coupling waveguide (14); the length of the coupling waveguide (14) is an even-numbered multiple of the coupling length of the maximum power transfer when the optical field is coupled between the main waveguide (13) and the coupling waveguide (14); the coupling length is determined according to the theory of the coupling mode of the waveguide, and is calculated by the following formula:
in the method, in the process of the invention, For the coupling length,/>For the coupling coefficient between the main waveguide (13) and the coupling waveguide (14)/>For the phase constant of the main waveguide (13)/>Is the phase constant of the coupling waveguide (14).
6. The laser according to claim 5, characterized in that the spacing between the main waveguide (13) and the coupling waveguide (14) is less than or equal to 500 nm.
7. The laser according to claim 5, characterized in that the high-transmission and high-reflection portions are located at both ends beyond both ends of the coupling waveguide (14).
8. The laser according to claim 5, characterized in that the main waveguide (13) and the coupling waveguide (14) are arranged in parallel.
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