CN117936604A - Metal grid line, preparation method and photovoltaic cell comprising metal grid line - Google Patents
Metal grid line, preparation method and photovoltaic cell comprising metal grid line Download PDFInfo
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- CN117936604A CN117936604A CN202410114487.XA CN202410114487A CN117936604A CN 117936604 A CN117936604 A CN 117936604A CN 202410114487 A CN202410114487 A CN 202410114487A CN 117936604 A CN117936604 A CN 117936604A
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- 239000002184 metal Substances 0.000 title claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 67
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 90
- 229910052802 copper Inorganic materials 0.000 claims abstract description 90
- 239000010949 copper Substances 0.000 claims abstract description 90
- 238000009713 electroplating Methods 0.000 claims abstract description 64
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 59
- 239000011248 coating agent Substances 0.000 claims abstract description 31
- 238000000576 coating method Methods 0.000 claims abstract description 31
- 238000011161 development Methods 0.000 claims abstract description 26
- 238000007772 electroless plating Methods 0.000 claims abstract description 25
- 238000001035 drying Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 2
- 238000006116 polymerization reaction Methods 0.000 abstract description 6
- 238000007747 plating Methods 0.000 description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
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- Electroplating Methods And Accessories (AREA)
Abstract
The application discloses a preparation method of a metal grid line, which comprises the following steps: s1, removing a copper film of an electroless plating area on a battery suede; s2, coating a second photoresist on the suede of the battery prepared in the step S1 and drying to form a second mask layer; s3, exposing and developing the pattern position of the electroless plating area; s4, electroplating the metal grid line in the electroplating area exposed after development. According to the application, the copper film of the non-electroplating area is removed firstly, and when the pattern position of the non-electroplating area is exposed and developed in the later period, the phenomenon of light reflection and scattering at the bottom of the exposure area (the non-electroplating area) cannot occur because the copper film of the non-electroplating area is removed, so that the problem that the copper grid line is easy to get off due to polymerization reaction of photoresist at the bottom of the non-exposure area to form so-called residual or residual photoresist at the bottom caused by reflection and scattering of light of the matte surface of the copper film at the bottom of the exposure area of the photovoltaic cell can be effectively solved, and the problem of poor adhesion at the bottom of the electroplated copper grid line is further influenced.
Description
Technical Field
The invention relates to the technical field of photovoltaic cell manufacturing, in particular to a metal grid line, a preparation method and a photovoltaic cell comprising the metal grid line.
Background
Metallization is one of key processes for preparing photovoltaic cells, silver grid lines are adopted in traditional metallization, and under the condition that double-sided rate is emphasized in high-efficiency batteries, the required consumption of silver paste is increased, and the cost ratio of the silver paste is high. Therefore, how to carry out metallization and cost reduction is an urgent subject at present. In this context, electrolytic copper plating techniques have evolved. The electrolytic copper plating technology is not only a subversion technology without silver, but also has the advantage of obvious cost reduction besides improving effect. However, in the copper electroplating process, a patterning mask process, that is, a commonly known yellow light process, must be matched at the front end; firstly, a layer of dry film or wet film is coated on a silicon wafer, and the electroplated pattern is transferred to a battery piece after exposure/development process.
However, in the prior art, since the silicon substrate of the photovoltaic cell is a copper film structure with a textured surface as the plating seed layer, the bottom photoresist of the non-exposed area (plating area) is exposed due to the reflection and scattering of light from the bottom of the exposed area, which is often caused by the use of a negative photoresist with a relatively cost advantage, during the pattern exposure, and polymerization reaction is generated to form a residual structure (fig. 10); once the opening section of the plating area forms a residual structure, the bottom contact of the electroplated copper is poor, so that the electroplated copper grid line (figure 11) is easy to be grid-removed due to poor adhesion.
Disclosure of Invention
In order to overcome the above-mentioned drawbacks, the present invention provides a metal grid line, a manufacturing method thereof and a photovoltaic cell including the metal grid line, so as to solve the problem of poor contact of the bottom of the electroplated metal grid line.
In order to achieve the above purpose, the invention adopts the following technical scheme: a preparation method of a metal gate line comprises the following steps:
S1, removing a copper film of an electroless plating area on a battery suede;
S2, coating a second photoresist on the suede of the battery prepared in the step S1 and drying to form a second mask layer;
s3, exposing and developing the pattern position of the electroless plating area;
s4, electroplating the metal grid line in the electroplating area exposed after development.
Further, in S1, the method includes the following steps:
S11, coating a first photoresist on a battery suede with a copper film and drying to form a first mask layer;
S12, exposing and developing the pattern position of the electroplating area;
s13, removing the copper film of the electroless plating area exposed after development;
S14, removing the first mask layer;
further, in S11, the first photoresist coating thickness is 1 to 5 μm. Exemplary, the first photoresist coating thickness is 1 μm, 2 μm, 3 μm, 4 μm, 5 μm.
Further, in S11, the first photoresist is shrunk by 0.1mm to 5mm and coated on the battery pile face by adopting a precise printing mode. Illustratively, the first photoresist is retracted over the battery pile by a distance of 0.1mm, 0.5mm, 1mm, 2mm, 3mm, 4mm, 5mm.
Further, in S13, the method further includes the following steps: the copper mold exposed by the shrink-back portion is removed.
Further, in S12, the pattern position of the plating area is exposed to light at an energy of 40 to 80mj/cm 2, and then developed at a spray pressure of 1.0 to 2.0kg/cm 2 and a speed of 1 to 3 m/min.
Further, in S13, the copper film in the non-electric region exposed after the development is immersed in 1 to 10% dilute sulfuric acid (or hydrochloric acid or nitric acid) at a temperature of 30 to 80 ℃ for 10 to 30 minutes to remove the copper film.
Further, in S2, the second photoresist coating thickness is 6-15 μm. The second photoresist coating thickness is illustratively 6 μm, 9 μm, 12 μm, 15 μm.
Further, in S3, the pattern position of the electroless plating region is exposed to light at an energy of 40 to 80mj/cm 2, and then developed at a spray pressure of 1.0 to 2.0kg/cm 2 and a speed of 1 to 3 m/min.
Further, in S4, the bottom width of the metal gate line is greater than the top width.
A metal gate line prepared according to the method of preparing a metal gate line as described above.
A photovoltaic cell comprising a metal grid line as described above.
The beneficial effects of the invention are as follows:
1) According to the application, the copper film of the non-electroplating area is removed firstly, and when the pattern position of the non-electroplating area is exposed and developed in the later period, the phenomenon of light reflection and scattering at the bottom of the exposure area (the non-electroplating area) cannot occur because the copper film of the non-electroplating area is removed, so that the problem that the copper grid line is easy to get off due to polymerization reaction of photoresist at the bottom of the non-exposure area to form so-called residual or residual photoresist at the bottom caused by reflection and scattering of light of the matte surface of the copper film at the bottom of the exposure area of the photovoltaic cell can be effectively solved, and the problem of poor adhesion at the bottom of the electroplated copper grid line is further influenced.
2) When the copper film in the exposure area is removed, the first mask layer which contracts inwards by 0.1-5 mm is accurately printed, so that the copper film exposed on the periphery of the surface of the copper film and the copper film plated around the four sides are removed at the same time, and the influence of possible stroke battery short circuit caused by a copper electroplating process is greatly reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application.
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a first mask layer prepared according to the present invention;
FIG. 2 is a schematic view of the present invention for exposing the pattern position of the plating area;
FIG. 3 is a schematic view of the development of the pattern position of the plating zone according to the present invention; ;
FIG. 4 is a schematic view of the removal of copper film in the electroless plating area of the present invention;
FIG. 5 is a schematic view of the invention with non-first mask layers removed;
FIG. 6 is a schematic illustration of the present invention for preparing a second mask layer and exposing the pattern locations of the electroless plating areas;
FIG. 7 is a schematic view of the development of the pattern position of the electroless plating area according to the present invention;
FIG. 8 is a schematic diagram of the invention for electroplating metal gate lines and removing the second mask layer;
FIG. 9 is a photograph of a plated metal gate line according to embodiment 1 of the present invention;
FIG. 10 is a schematic view of the exposure of the pattern position of the electroless plating area according to comparative example 1 of the present invention;
FIG. 11 is a schematic view of a plated metal gate line according to comparative example 1 of the present invention;
FIG. 12 is a photograph of a plated metal gate line of comparative example 1 of the present invention;
Fig. 13 is a tensile test chart of an electroplated metal gate line according to embodiment 1 of the present invention.
Wherein: 1. a battery; 2. a copper film; 3. a first mask layer; 4. a retracted position; 5. an electroless plating region; 6. an electroplating area; 7. a second mask layer; 8. a metal gate line.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
Except where shown or otherwise indicated in the operating examples, all numbers expressing quantities of ingredients, physical and chemical properties, and so forth, used in the specification and claims are to be understood as being modified in all instances by the term "about". Accordingly, unless indicated to the contrary, the numerical parameters set forth in the foregoing specification and attached claims are approximations that can be varied appropriately by those skilled in the art utilizing the desired properties sought to be obtained by the teachings disclosed herein. The use of numerical ranges by endpoints includes all numbers subsumed within that range and any range within that range, e.g., 1 to 5 includes 1, 1.1, 1.3, 1.5, 2, 2.75, 3, 3.80, 4, 5, and the like.
The applicant found that, because the silicon substrate of the photovoltaic cell is a copper film structure with a textured surface as an electroplating seed layer, when the pattern is exposed, light reflection and scattering from the bottom of the exposed area can cause exposure to the bottom photoresist of the non-exposed area due to the use of negative photoresist with a relatively cost advantage, and a polymerization reaction formation residue structure is generated, which can cause poor contact of the bottom of electroplated copper, so that the electroplated copper grid line is easy to be stripped due to poor adhesion.
An embodiment of the present invention provides a method for manufacturing a metal gate line to solve the above-mentioned problems, which specifically includes the following steps:
S1, removing a copper film of an electroless plating area on a battery suede;
s11, referring to fig. 1, a precise printing mode is adopted to coat a first photoresist on the suede of the battery 1 with the copper film 2, and the first photoresist is contracted by 0.1-5 mm and coated on the suede of the battery 1. The first photoresist is baked at a temperature of 70-120 ℃ to form the first mask layer 3, and the first mask layer 3 is removed later as a sacrificial layer, so that the thickness of the first mask layer 3 is not strictly required, and the cost is saved, and the coating thickness of the first photoresist for forming the first mask layer 3 is preferably 1-5 mu m.
Because the current photovoltaic cell copper electroplating process needs to use the textured copper film as an electroplating seed layer, copper sputtering can form a copper film around plating problem on four peripheries of a silicon wafer during the textured copper film preparation process, and the copper plating process of the photovoltaic cell can amplify the around plating problem, so that the risk of short circuit of the cell is caused. Therefore, the first photoresist is coated on the suede of the battery 1in a shrinking manner, so that the copper film 2 at the shrinking position 4 is exposed outside, the situation that the first mask layer 3 is not covered on the copper film 2 around the periphery and the side of the battery 1 is ensured, the copper film 2 of the non-electroplating area 5 is removed in the following step S13, the copper film 2 around the periphery and the side of the battery 1 is simultaneously removed, the insulation effect of the photovoltaic battery 1 is effectively improved, and the influence of battery short circuit possibly formed by a copper electroplating process is greatly reduced.
S12, referring to fig. 2 and 3, exposing and developing the pattern position of the electroplating area 6, wherein the electroplating area 6 refers to the area where the metal grid line 8 needs to be electroplated in the step S4; the pattern position of the plating area 6 is exposed to light at an energy of 40 to 80mj/cm 2, and then developed at a spray pressure of 1.0 to 2.0kg/cm 2 and a speed of 1 to 3 m/min, exposing the copper film 2 of the non-plating area 5.
S3, referring to the figure 4, removing the copper film 2 of the electroless plating area 5 exposed after development; the specific method for removing the copper film 2 comprises the following steps: the copper film 2 of the non-plating area 5 exposed after development is placed in dilute acid and soaked for 10 to 30 minutes at a temperature of 30 to 80 ℃ to be removed. Dilute sulfuric acid, nitric acid or hydrochloric acid with the concentration of 1-10% can be used for removing the exposed copper film 2 through an oxidation-reduction process. The copper film 2 of the plating region 6 remains due to the coverage of the first mask layer 3. By removing the copper film 2 of the electroless plating region 5, in the following step S3, when the pattern position of the electroless plating region 5 is exposed and developed, since the copper film 2 of the electroless plating region 5 is removed, the bottom of the exposure region (the electroless plating region 5) will not be reflected or scattered, and the photoresist at the bottom of the non-exposure region (the electroplating region 6) will not be exposed, thereby solving the problem of the residual structure of the metal gate line 8.
In the process of removing the copper film 2 in the non-electric region, the copper film 2 in the first photoresist shrinking part or other exposed copper films 2 can be removed at the same time, so that the insulation effect of the photovoltaic cell 1 can be effectively improved, and the short circuit of the photovoltaic cell 1 is avoided.
S14, referring to the figure 5, removing the first mask layer 3;
The first mask layer 3 is soaked in NaOH with the concentration of 1-10% for 10-30 minutes at the temperature of 30-80 ℃ to be removed.
S2, referring to fig. 6, coating a second photoresist on the suede of the battery 1 prepared in the step S1 and drying to form a second mask layer 7; the second photoresist coating thickness is 6-15 μm. Since the second mask layer 7 is exposed and developed, and then the metal gate line 8 is electroplated in the electroplating area 6, the coating thickness of the second photoresist is not less than the thickness of the metal gate line 8, and in the application, the coating thickness of the second photoresist is preferably 6-15 μm.
S3, referring to fig. 6 and 7, the pattern position of the non-electroplating area 5 is exposed and developed, so that an opening is formed in the electroplating area 6, and the metal grid line 8 is conveniently electroplated in the later stage. Since the copper film 2 of the electroless plating region 5 has been removed in step S1, the bottom of the exposure region (electroless plating region 5) will not have light reflection and scattering phenomena, thereby affecting the photoresist at the bottom of the non-exposure region to generate local polymerization; so that a better plating bath type (positive ladder type) can be formed after development.
S4, referring to fig. 7 and 8, the metal grid line 8 is electroplated in the electroplating area 6 exposed after development, and a good electroplating layer type can be obtained because a good electroplating tank type (positive ladder tank type) can be formed after development in S6. The width of the bottom of the metal grid line 8 formed after electroplating is larger than the width of the top, and the metal grid line is approximately in the shape of a positive trapezoid. The bottom of the metal grid line 8 is one end contacted with the battery 1, and the width of the bottom of the metal grid line 8 after electroplating is larger than the width of the top, so that the contact area with a battery 1 piece is increased, and the adhesion of electroplated copper is further increased.
Examples
The present disclosure is more particularly described in the following examples that are intended as illustrations only, since various modifications and changes within the scope of the present disclosure will be apparent to those skilled in the art. Unless otherwise indicated, all parts, percentages, and ratios reported in the examples below are by weight, and all reagents used in the examples are commercially available or were obtained synthetically according to conventional methods and can be used directly without further treatment, as well as the instruments used in the examples.
Example 1
S1, removing a copper film of an electroless plating area on a battery suede;
S11, coating a first photoresist on a battery suede with a copper film in a precise printing mode, and coating the battery suede with the first photoresist shrunk by 0.5 mm. And drying the first photoresist at the temperature of 100 ℃ to form a first mask layer, wherein the coating thickness of the first photoresist is 2 mu m.
S12, exposing the pattern position of the electroplating area with energy of 60mj/cm 2, and then developing at a spraying pressure of 1.5kg/cm 2 and a speed of 2 m/min to expose the copper film of the non-electroplating area.
S13, immersing the copper film of the non-electric region exposed after development in 5% dilute sulfuric acid at the temperature of 30-80 ℃ for 10-30 minutes to remove the copper film of the non-electric region exposed after development and the copper film of the contracted part of the first photoresist.
S14, soaking the first mask layer in 5% NaOH at the temperature of 50 ℃ for 10-30 minutes to remove the first mask layer.
S2, coating a second photoresist on the suede of the battery prepared in the step S1 and drying to form a second mask layer; the second photoresist coating thickness was 10 μm.
And S3, exposing and developing the pattern position of the non-electroplating area to form an opening in the electroplating area, so that the metal grid line can be electroplated at the later stage conveniently.
And S4, electroplating the metal grid line in the electroplating area exposed after development, wherein the width of the bottom of the metal grid line formed after electroplating is larger than that of the top of the metal grid line, and the metal grid line is approximately in a positive trapezoid shape.
Example 2
S1, removing a copper film of an electroless plating area on a battery suede;
s11, coating a first photoresist on a battery suede with a copper film in a precise printing mode, and coating the battery suede with the first photoresist shrunk by 0.1 mm. The first photoresist is dried at 70 ℃ to form a first mask layer, and the coating thickness of the first photoresist is preferably 1 mu m.
S12, exposing the pattern position of the electroplating area with energy of 40mj/cm 2, and then developing at a spraying pressure of 1.0kg/cm 2 and a speed of 1 meter/min to expose the copper film of the non-electroplating area.
S13, immersing the copper film of the non-electric region exposed after development in 1% dilute sulfuric acid at the temperature of 30 ℃ for 30 minutes to remove the copper film of the non-electric region exposed after development and the copper film of the contracted part of the first photoresist.
S14, soaking the first mask layer with 1% NaOH at the temperature of 50 ℃ for 30 minutes to remove the first mask layer.
S2, coating a second photoresist on the suede of the battery prepared in the step S1 and drying to form a second mask layer; the second photoresist coating thickness was 6 μm.
And S3, exposing and developing the pattern position of the non-electroplating area to form an opening in the electroplating area, so that the metal grid line can be electroplated at the later stage conveniently.
And S4, electroplating the metal grid line in the electroplating area exposed after development, wherein the width of the bottom of the metal grid line formed after electroplating is larger than that of the top of the metal grid line, and the metal grid line is approximately in a positive trapezoid shape.
Example 3
S1, removing a copper film of an electroless plating area on a battery suede;
s11, adopting a precise printing mode, coating a first photoresist on a battery suede with a copper film, and coating the battery suede with the first photoresist shrunk by 5 mm. The first photoresist is dried at 120 ℃ to form a first mask layer, and the coating thickness of the first photoresist is preferably 5 mu m.
S12, exposing the pattern position of the electroplating area with energy of 80mj/cm 2, and then developing the pattern position at a spraying pressure of 2.0kg/cm 2 and a speed of 3 m/min to expose the copper film of the non-electroplating area.
S13, immersing the copper film of the non-electric region exposed after development in 10% dilute sulfuric acid at the temperature of 30 ℃ for 30 minutes to remove the copper film of the non-electric region exposed after development and the copper film of the contracted part of the first photoresist.
S14, soaking the first mask layer in 10% NaOH at 80 ℃ for 10 minutes to remove the first mask layer.
S2, coating a second photoresist on the suede of the battery prepared in the step S1 and drying to form a second mask layer; the second photoresist coating thickness was 15 μm.
And S3, exposing and developing the pattern position of the non-electroplating area to form an opening in the electroplating area, so that the metal grid line can be electroplated at the later stage conveniently.
And S4, electroplating the metal grid line in the electroplating area exposed after development, wherein the width of the bottom of the metal grid line formed after electroplating is larger than that of the top of the metal grid line, and the metal grid line is approximately in a positive trapezoid shape.
Comparative example 1
S1, coating photoresist on the suede of the battery 1 with the copper film 2 by adopting a printing mode. The photoresist was baked at a temperature of 100 c to form the second mask layer 7, and the photoresist coating thickness was 2 μm.
S2, referring to FIG. 10, the pattern position of the non-electroplating area is exposed with energy of 60mj/cm 2, and when the pattern position is exposed, light reflection and scattering from the bottom of the exposure area are caused by the copper film of the non-electroplating area, so that photoresist at the bottom of the non-exposure area (electroplating area) is also exposed, and a polymerization reaction formation residual structure is generated. Then, development was performed at a spray pressure of 1.5kg/cm 2 and a speed of 2 m/min to expose the copper film in the plating area.
S3, referring to fig. 11 and 12, the metal grid line is electroplated in the electroplating area exposed after development, and the bottom contact failure of electroplated copper is caused due to the residual structure formed by the opening section of the electroplating area, so that the electroplated copper grid line is easy to get off the grid due to poor adhesion. From the picture, the width of the lower side surface of the metal grid line is smaller than that of the upper side surface, and the metal grid line is in a residual phenomenon.
Experimental examples
The tensile force test was performed on the metal gate wire prepared in example 1, and as shown in fig. 13, the tensile force of the metal gate wire prepared in example 1 was all greater than 1.5N and even up to 2.2N. In the art, the tensile force of the metal gate line is generally less than 1.0N, but the metal gate line prepared in comparative example 1 is in a structure with a cross section as in comparative example 1 in the actual test, and often has a gate detachment phenomenon after the mask layer removing step after the electroplating process, and the tensile force test cannot be performed. Therefore, the invention solves the problem that the copper grid line is easy to get off due to poor adhesion of the bottom of the electroplated copper grid line by removing the copper film in the non-electroplating area.
The above embodiments are only for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and to implement the same, but are not intended to limit the scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of the present invention.
Claims (10)
1. The preparation method of the metal gate line is characterized by comprising the following steps of:
S1, removing a copper film of an electroless plating area on a battery suede;
S2, coating a second photoresist on the suede of the battery prepared in the step S1 and drying to form a second mask layer;
s3, exposing and developing the pattern position of the electroless plating area;
s4, electroplating the metal grid line in the electroplating area exposed after development.
2. The method for manufacturing a metal gate line according to claim 1, wherein S1 comprises the steps of:
S11, coating a first photoresist on a battery suede with a copper film and drying to form a first mask layer;
S12, exposing and developing the pattern position of the electroplating area;
s13, removing the copper film of the electroless plating area exposed after development;
S14, removing the first mask layer.
3. The method of manufacturing a metal gate line according to claim 2, wherein in S11, the first photoresist is coated to a thickness of 1 to 5 μm.
4. The method for manufacturing a metal grid line according to claim 2, wherein in S11, a precise printing mode is adopted to coat the first photoresist with 0.1 mm-5 mm shrinkage on the battery suede.
5. The method for manufacturing a metal gate line according to claim 4, wherein in S13, further comprising the steps of: the copper mold exposed by the shrink-back portion is removed.
6. The method of manufacturing a metal gate line according to claim 2, wherein in S13, the copper film in the non-electric region exposed after the development is immersed in a dilute acid at 30 to 80 ℃ for 10 to 30 minutes to remove.
7. The method of manufacturing a metal gate line according to claim 1, wherein in S2, the second photoresist is coated to a thickness of 6 to 15 μm.
8. The method of claim 1, wherein in S4, the bottom width of the metal gate line is greater than the top width.
9. A metal gate line prepared according to the method of any one of claims 1 to 8.
10. A photovoltaic cell comprising the metal grid line of claim 9.
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| CN202410114487.XA CN117936604A (en) | 2024-01-26 | 2024-01-26 | Metal grid line, preparation method and photovoltaic cell comprising metal grid line |
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| CN202410114487.XA CN117936604A (en) | 2024-01-26 | 2024-01-26 | Metal grid line, preparation method and photovoltaic cell comprising metal grid line |
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