CN117923416A - MEMS element and manufacturing method thereof - Google Patents
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- CN117923416A CN117923416A CN202410029440.3A CN202410029440A CN117923416A CN 117923416 A CN117923416 A CN 117923416A CN 202410029440 A CN202410029440 A CN 202410029440A CN 117923416 A CN117923416 A CN 117923416A
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Abstract
The disclosure provides an MEMS element and a manufacturing method thereof, and belongs to the technical field of semiconductors. The MEMS element includes: one or more MEMS units, a wiring layer arranged on the MEMS units, one or more first electrodes and one or more second electrodes which are arranged on one side of the wiring layer away from the MEMS units in an insulating manner, wherein the first electrodes and the second electrodes are arranged at intervals; the first terminals of the one or more MEMS units are electrically connected with the one or more first electrodes through the wiring layer, and the second terminals of the one or more MEMS units are electrically connected with the one or more second electrodes through the wiring layer; the MEMS units are electrically connected through the wiring layer. The MEMS units are electrically connected with the electrodes through the wiring layer, and meanwhile, the MEMS units are electrically connected, so that the application is more flexible, and a redistribution layer or other lead mode is not required to be additionally designed in practical application.
Description
Technical Field
The disclosure belongs to the technical field of MEMS devices, and particularly relates to an MEMS element and a manufacturing method thereof.
Background
The 3D micro device formed based on the MEMS technology has the characteristics of small volume, light weight, high reliability, high integration level and the like, so that the MEMS element is widely applied to various electronic devices, for example, a MEMS switch can be applied to various applications requiring high-speed and electrically low-current switches in a circuit; MEMS capacitors can be used in a variety of circuits, such as tunable filters, tunable phase shifters, tunable antennas, and the like. Accordingly, with the diversification of application circuits, the requirements on the size, specification and production cycle of MEMS elements are increasing.
However, the current MEMS element is more biased to the customization of specifications, a perfect specification standard is not formed, the application cost is high, the electrode of each MEMS unit is reserved in the MEMS element, and the first electrode and the second electrode are directly and electrically connected to the MEMS unit, for example, the first electrode or the second electrode is connected with the terminal of the MEMS unit or the wafer substrate, so that the use flexibility is poor; furthermore, in practical application of the MEMS element, it is also necessary to specifically design the package substrate or the redistribution layer (RDL) or apply other lead lines according to the size and specification of the MEMS element required by the customer, and ESR or ESL may be additionally introduced into each MEMS element while increasing the design cost.
Disclosure of Invention
The present disclosure aims to solve at least one of the technical problems existing in the prior art, and provides a MEMS element and a method for manufacturing the same.
In one aspect of the present disclosure, a MEMS element is presented, comprising: the MEMS device comprises one or more MEMS units, a wiring layer arranged on the MEMS units, and one or more first electrodes and one or more second electrodes which are arranged on one side of the wiring layer away from the MEMS units in an insulating manner, wherein the first electrodes and the second electrodes are arranged at intervals; wherein,
One or more first terminals of the MEMS units are electrically connected with the one or more first electrodes through the wiring layer, and one or more second terminals of the MEMS units are electrically connected with the one or more second electrodes through the wiring layer;
and the MEMS units are electrically connected through the wiring layer.
Optionally, the plurality of MEMS units are electrically connected in at least one of series connection, parallel connection and series-parallel connection through the wiring layer.
Optionally, the routing layer includes a first routing portion, a second routing portion, and a third routing portion; wherein,
A first terminal of one MEMS unit is electrically connected with the first electrode through the first wiring part, and a second terminal of the other MEMS unit is electrically connected with the second electrode through the second wiring part; and first and second terminals between the plurality of MEMS elements are connected in series through the third wiring portion.
Optionally, the routing layer includes a first routing portion and a second routing portion;
The first terminals of the MEMS units are connected in parallel through the first wiring parts, and the first wiring parts are electrically connected with the first electrodes;
The second terminals of the MEMS units are connected in parallel through the second wiring parts, and the second wiring parts are electrically connected with the second electrodes.
Optionally, the routing layer includes a first routing portion, a second routing portion, and a third routing portion;
First terminals of at least two MEMS units in the plurality of MEMS units are electrically connected to the first electrode in parallel through the first wiring part;
second terminals of at least two MEMS units in the MEMS units are electrically connected to the second electrode in parallel through the second wiring part, and the first electrode, the at least two MEMS units and the second electrode form at least two parallel circuits;
and the MEMS units in at least one parallel circuit are electrically connected in series through the third wiring part.
Optionally, the number of the first electrode and the number of the second electrodes are one.
Optionally, a first dielectric layer is further disposed on the wiring layer, and one or more first electrode connection through holes and one or more second electrode connection through holes are disposed on the first dielectric layer at intervals;
The first electrode and the second electrode are respectively arranged in the corresponding first electrode connecting through hole and the second electrode connecting through hole in a penetrating mode and are electrically connected with the wiring layer.
Optionally, a plurality of the MEMS elements are adjoined by scribe lines.
Optionally, the MEMS element is at least one of a MEMS capacitive element, a MEMS resistive element, and a MEMS inductive element.
Optionally, the MEMS capacitive unit includes one or more first plates, one or more second dielectric layers, a third dielectric layer, and first and second conductive portions; wherein,
The first polar plate and the second polar plate are overlapped in a staggered way, the second dielectric layer is arranged between the first polar plate and the second polar plate, and the third dielectric layer is arranged on one side of the first polar plate or the second polar plate, which is away from the second dielectric layer;
The first conductive part is insulated from the second conductive part and at least penetrates through the third dielectric layer, one end of the first conductive part is electrically connected with the first polar plate to form a first terminal, one end of the second conductive part is electrically connected with the second polar plate to form a second terminal, and the other ends of the first conductive part and the second conductive part are electrically connected with the wiring layer.
In another aspect of the present disclosure, a method for fabricating a MEMS element is provided, the method comprising:
forming a plurality of MEMS elements on one or more wafers;
Forming a wiring layer on one or more MEMS units, the plurality of MEMS units being electrically connected through the wiring layer;
Forming a first dielectric layer on the wiring layer, and forming one or more first electrode connecting through holes and one or more second electrode connecting through holes on the first dielectric layer at intervals;
One or more first electrodes are correspondingly formed in the one or more first electrode connecting through holes, and one or more second electrodes are correspondingly formed in the one or more second electrode connecting through holes.
Optionally, forming a routing layer on the plurality of MEMS elements includes:
and forming a plurality of wiring parts on the first terminals and the second terminals of the MEMS units correspondingly, wherein the wiring parts are electrically connected with the MEMS units in at least one of series connection, parallel connection and series-parallel connection.
The present disclosure proposes a MEMS element and a method of manufacturing the same, the MEMS element comprising: one or more MEMS units, a wiring layer arranged on the MEMS units, one or more first electrodes and one or more second electrodes which are arranged on one side of the wiring layer away from the MEMS units in an insulating manner, wherein the first electrodes and the second electrodes are arranged at intervals; the first terminals of the one or more MEMS units are electrically connected with the one or more first electrodes through the wiring layer, and the second terminals of the one or more MEMS units are electrically connected with the one or more second electrodes through the wiring layer; the MEMS units are electrically connected through the wiring layer. The wiring layer can be customized according to the requirements to change the wiring layout, the MEMS units are electrically connected with the electrodes through the wiring layer, meanwhile, the electrical connection among the MEMS units is also realized, the application is more flexible, RDL (remote data storage) is not required to be additionally designed or other lead modes are not required to be applied in practical application, and the research and development cost and period are reduced.
Drawings
FIG. 1 is a schematic diagram of a wafer with MEMS units according to an embodiment of the disclosure;
FIG. 2 is a schematic cross-sectional view of a MEMS capacitive structure in accordance with another embodiment of the present disclosure;
FIG. 3 is a schematic cross-sectional view of a MEMS capacitive structure in accordance with another embodiment of the present disclosure;
FIG. 4 is a schematic cross-sectional view of a MEMS capacitive unit according to another embodiment of the disclosure;
FIG. 5 is a schematic cross-sectional view of a MEMS element of another embodiment of the present disclosure;
FIG. 6 is a schematic exploded view of a MEMS element of another embodiment of the present disclosure;
FIG. 7 is a schematic view of a wafer structure with MEMS devices according to another embodiment of the present disclosure;
FIG. 8 is a schematic exploded view of the MEMS element of embodiment 1 of the present disclosure;
FIG. 9 is a partially cut-away schematic illustration of a wafer with MEMS devices fabricated on a trace layer in accordance with embodiment 1 of the present disclosure;
FIG. 10 is a schematic diagram of the internal circuit of the MEMS element in embodiment 1 of the present disclosure;
FIG. 11 is a schematic exploded view of the MEMS element in embodiment 2 of the present disclosure;
FIG. 12 is a schematic diagram of the internal circuit of the MEMS element in embodiment 2 of the present disclosure;
FIG. 13 is a schematic exploded view of the MEMS element in embodiment 3 of the present disclosure;
FIG. 14 is a schematic diagram of the internal circuit of the MEMS element in embodiment 3 of the present disclosure;
FIG. 15 is a schematic exploded view of the MEMS element of embodiment 4 of the present disclosure;
FIG. 16 is a schematic diagram of the internal circuitry of the MEMS element in embodiment 4 of the present disclosure;
FIG. 17 is a flow chart of a method of fabricating a MEMS element according to another embodiment of the present disclosure;
FIG. 18 is a flow chart diagram of a method of fabricating a MEMS element in accordance with another embodiment of the present disclosure;
Reference numerals:
100. A MEMS element;
101. Wafer, 102, scribing grooves, 103 and wafer substrate;
110. The MEMS resistor comprises MEMS units, 110a, MEMS capacitance units, 110b, MEMS resistance units, 110c and MEMS inductance units;
111. First electrode plate, 112, second electrode plate, 113, second dielectric layer, 114, third dielectric layer, 115, first conductive portion, 116, second conductive portion, 117, first electrode plate connecting via, 118, second electrode plate connecting via, 119, fourth dielectric layer, 119a, first conductive portion connecting via, 119b, second conductive portion connecting via;
120. a wiring layer 121, a first wiring part 122, a second wiring part 123, and a third wiring part;
130. a first electrode;
140. A second electrode;
150. a first dielectric layer 151, a first electrode connection via 152, and a second electrode connection via.
Detailed Description
In order that those skilled in the art will better understand the technical solutions of the present disclosure, the present disclosure will be described in further detail with reference to the accompanying drawings and detailed description. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments, which can be made by one of ordinary skill in the art without the need for inventive faculty, are intended to be within the scope of this disclosure, based on the described embodiments of this disclosure.
As shown in fig. 1 to 16, an aspect of the present disclosure proposes a MEMS element 100 including: the MEMS device comprises one or more MEMS units 110, a wiring layer 120 arranged on the MEMS units 110, one or more first electrodes 130 and one or more second electrodes 140 which are arranged on one side of the wiring layer 120 away from the MEMS units 110 in an insulating manner, wherein the first electrodes 130 and the second electrodes 140 are arranged at intervals; the MEMS units 110 have a first terminal and a second terminal, the first terminal of one or more MEMS units 110 is electrically connected to the first electrode 130 through the wiring layer 120, and the second terminal of one or more MEMS units 110 is electrically connected to the second electrode 140 through the wiring layer 120; the MEMS elements 110 are electrically connected by a trace layer 120.
In the embodiment, the electrical connection between one or more MEMS units and the first electrode and the second electrode is realized through the wiring layer, meanwhile, the circuit connection between the plurality of MEMS units is also realized through the wiring layer, wiring of the MEMS element is completed, the number of the electrodes and the connection mode among the MEMS units are favorably set according to the needs, so that the MEMS elements with different specifications and sizes are obtained, the application is more flexible, and in addition, a redistribution layer is not required to be additionally designed or other lead modes are not required to be applied during practical application, so that the development cost and the development period are reduced.
In the present embodiment, a circuit connection manner of the plurality of MEMS elements in one MEMS element by the wiring layer is not particularly limited, and for example, the plurality of MEMS elements are connected in series, parallel, or series-parallel by the wiring layer. Of course, in one MEMS element, the plurality of MEMS units are not limited to any one of the above-described connection methods, but may include two or three of series connection, parallel connection, and series-parallel connection, and for example, the plurality of MEMS units may be connected in series and parallel connection, in series connection, series and series-parallel connection, parallel connection and series-parallel connection, in parallel connection, series-parallel connection, or the like.
It should be further noted that, in this embodiment, the number of the first electrodes and the second electrodes is not limited, and only one first electrode and one second electrode may be provided, or a plurality of first electrodes and a plurality of second electrodes less than the number of MEMS units may be provided, so that the final MEMS element only retains two required electrodes or a small number of required electrodes, and the control of all MEMS units in the whole MEMS element is completed. Of course, a plurality of first electrodes and a plurality of second electrodes, which are equal to the number of MEMS elements, may be provided, and a plurality of first electrodes and a plurality of second electrodes, which are greater than the number of MEMS elements, may be provided, so as to realize complex MEMS element combinations and voltage control.
In some preferred embodiments, in one MEMS element, when a plurality of MEMS elements are electrically connected in any one of parallel, serial and parallel connection through the wiring layer to form a group of MEMS elements, a first electrode and a second electrode are electrically connected to the group of MEMS elements, so that the final MEMS element only retains two required electrodes, and control of all MEMS elements in the whole MEMS element is completed.
In other preferred embodiments, in one MEMS element, when a plurality of MEMS elements are electrically connected in parallel, in series, or in series through the wiring layer to form a plurality of groups of MEMS elements, one first electrode and one second electrode may be provided, or a plurality of first electrodes and second electrodes fewer than the number of MEMS elements may be provided. For example, when a plurality of MEMS units are electrically connected in series to form a group of MEMS units, another plurality of MEMS units are electrically connected in series to form another group of MEMS units, and another plurality of MEMS units are electrically connected in parallel to form another group of MEMS units, a first electrode and a second electrode are provided, and a first electrode and a second electrode are simultaneously electrically connected to three groups of MEMS units; two first electrodes and two second electrodes can be arranged, one of the first electrodes and one of the second electrodes are electrically connected to one group of MEMS units, and the other first electrode and the other second electrode are simultaneously electrically connected to the other two groups of MEMS units; three first electrodes and three second electrodes can be further arranged, each first electrode and each second electrode are electrically connected to a group of MEMS units, so that only two or a small number of required electrodes are reserved in the final MEMS element, the control of all MEMS units in the whole MEMS element is completed, and convenience is brought to application of customers.
In the following, the connection manner of the wiring layer is specifically as follows when the MEMS elements are electrically connected in series:
When one MEMS element comprises a plurality of MEMS units, the wiring layer comprises a first wiring part, a second wiring part and a third wiring part; wherein, the first terminal of one MEMS unit in the plurality of MEMS units is electrically connected with the first electrode through the first wiring part; a second terminal of another MEMS unit in the plurality of MEMS units is electrically connected with the second electrode through a second wiring part; the MEMS units are connected in series through the third wiring part, so that the electrical connection among the MEMS units is realized in a series mode through the wiring layer.
In the following, the connection manner of the wiring layer is specifically as follows when the MEMS elements are electrically connected in parallel:
when one MEMS element comprises a plurality of MEMS units, the wiring layer comprises a first wiring part and a second wiring part; the first terminals of the MEMS units are connected in parallel through the first wiring part, and the first wiring part is electrically connected with the first electrode; the second terminals of the MEMS units are connected in parallel through the second wiring parts, and the second wiring parts are electrically connected with the second electrodes, so that the electrical connection among the MEMS units is achieved through the wiring layers in a parallel mode.
In the following, a connection manner of the routing layer is specifically as follows when each MEMS unit is electrically connected in a series-parallel manner:
When one MEMS element comprises a plurality of MEMS units, the wiring layer comprises a first wiring part, a second wiring part and a third wiring part; the first terminals of at least two MEMS units in the plurality of MEMS units are electrically connected to the first electrode in parallel through the first wiring part, and the second terminals of the at least two MEMS units in the plurality of MEMS units are electrically connected to the second electrode in parallel through the second wiring part, so that the first electrode, the at least two MEMS units and the second electrode form at least two parallel circuits; and the MEMS units in the at least one parallel circuit are electrically connected in series through the third wiring part so as to realize the electric connection among the MEMS units in a series-parallel mode through the wiring layers.
It should be understood that in the embodiment in which the MEMS units are electrically connected in series-parallel, at least two MEMS units electrically connected in parallel by the first wiring portion may be different MEMS units or may be partially identical MEMS units. For example, when the MEMS element includes four or more MEMS elements, two or more of the MEMS elements are electrically connected in parallel to the first electrode through the first wiring portion, and the other two or more of the MEMS elements are electrically connected in parallel to the second electrode through the second wiring portion. For another example, when the MEMS element includes three MEMS elements, the first MEMS element, the second MEMS element, and the third MEMS element are respectively connected in parallel and electrically connected to the first electrode through the first trace portion, and the second MEMS element and the third MEMS element are connected in parallel and electrically connected to the second electrode through the second trace portion.
Further, in the present embodiment, the dielectric layer may be provided to insulate between the electrodes and between the electrode and the trace layer, and it should be understood that a connection via hole may be further provided on the dielectric layer between the electrode and the trace layer to conduct between the electrode and the trace layer through the electrode connection via hole.
Specifically, as shown in fig. 5 and 6, a first dielectric layer 150 is disposed on the trace layer 120, one or more first electrode connection through holes 151 and one or more second electrode connection through holes 152 are disposed on the first dielectric layer 150 at intervals, and the trace layer 120 under the first electrode connection through holes 151 and the second electrode connection through holes 152 is exposed, so that one or more first electrodes 130 and one or more second electrodes 140 are respectively disposed in the corresponding first electrode connection through holes 151 and second electrode connection through holes 152, so that the first electrodes 130 and the second electrodes 140 are electrically connected to the trace layer 120, and the first electrodes 130 and the second electrodes 140 are disposed at intervals.
In the present embodiment, the shape, size and arrangement of the first electrode and the second electrode are not limited, and may be designed according to actual needs.
The materials of the first electrode and the second electrode are conductors with good conductivity and low resistivity, and may be metals such as aluminum, gold, copper, alloys such as nickel-titanium alloy, copper-nickel alloy, and the like, or other materials, which are not particularly limited.
It should be noted that the shapes, sizes, numbers and arrangements of the first electrode connection through holes and the second electrode connection through holes are not limited, and the numbers of the first electrode connection through holes and the second electrode connection through holes may be determined according to the numbers of the first electrodes and the second electrodes.
It should be noted that the first dielectric layer may be made of a single dielectric material, such as silicon oxide, silicon nitride, hafnium oxide, zirconium oxide, or a combination of multiple dielectric materials, which is not particularly limited.
Further, in the present embodiment, the type of the MEMS unit is not particularly limited, and for example, the MEMS unit may be a passive MEMS device including a MEMS capacitor, a MEMS inductor, a MEMS resistor, or the like, or may be an active device including a MEMS speaker, a MEMS micromirror, a MEMS resonator, or the like.
It should be understood that the MEMS elements are typically densely packed on a wafer, and thus, the densely packed MEMS elements fabricated on a wafer may all be one device, such as a MEMS capacitor, or may be one device, or may be another device, such as a MEMS capacitor, or may be a MEMS inductor, or a MEMS resistor.
It should be further noted that the plurality of MEMS units closely arranged on the wafer may be abutted by the scribe line grooves, so that a desired MEMS element may be obtained by dicing, in which the electrical connection of each MEMS unit is completed by the trace layer.
In some preferred embodiments, referring to fig. 1 and 15, a wafer 101 is used as a substrate, a plurality of MEMS units 110 are densely arranged on one surface of the wafer 101, the plurality of MEMS units 110 include a MEMS capacitor unit 110a, a MEMS resistor unit 110b, and a MEMS inductor unit 110c, so as to maximize the use of the wafer, and scribe grooves 102 are provided between each of the MEMS units 110 on the wafer 101, and the plurality of MEMS units 110 are adjacent through the scribe grooves 102.
In other preferred embodiments, referring to fig. 1, 8, 9, 11 and 13, a wafer 101 is used as a substrate, a plurality of MEMS units 110 are densely arranged on one surface of the wafer 101, the plurality of MEMS units 110 are MEMS capacitor units 110a, and scribe grooves 102 are disposed between the MEMS capacitor units 110a on the wafer 101, and the plurality of MEMS capacitor units 110a are adjacent to each other through the scribe grooves 102.
In the present embodiment, when the MEMS element includes a plurality of MEMS capacitive elements, the plurality of MEMS capacitive elements may be the same or different.
Specifically, as shown in fig. 2 to 7, taking an example in which the MEMS element 100 includes a plurality of MEMS capacitive units 110a, each MEMS capacitive unit 110a includes a capacitive structure formed by one or more first electrode plates 111, one or more second electrode plates 112, and one or more second dielectric layers 113. Wherein the first electrode plates 111 and the second electrode plates 112 are stacked alternately, the first electrode plates 111 in each layer are connected to each other, the second electrode plates 112 in each layer are connected to each other, and a second dielectric layer 113 is disposed between each layer of the first electrode plates 111 and each layer of the second electrode plates 112 to insulate the first electrode plates 111 and the second electrode plates 112 from each other.
In the present embodiment, the number of layers of the first electrode plate and the second electrode plate included in the capacitor structure is not particularly limited, and the number of layers of the first electrode plate and the second electrode plate may be one layer or may be multiple layers, and the number of layers of the first electrode plate and the second electrode plate may be the same or different.
The materials of the first electrode plate and the second electrode plate are conductors with good conductivity and low resistivity, and may be metals such as aluminum, gold, copper, alloys such as nickel-titanium alloy, and the like, and other materials.
In some preferred embodiments, referring to fig. 2, in order to increase the specific surface area of the MEMS device, one or more deep trenches are disposed on the wafer 101 and along the extending direction perpendicular to the surface of the wafer 101, and a first electrode plate 111, a second dielectric layer 113, a second electrode plate 112, a second dielectric layer 113, and a first electrode plate 111 are sequentially stacked on the wafer substrate 103 in the deep trenches to form a capacitor structure. That is, two layers of first polar plates, one layer of second polar plates and two layers of second dielectric layers are filled in the deep grooves to form the capacitor structure.
In other preferred embodiments, referring to fig. 3, one or more deep trenches are disposed on the wafer 101 and along the extending direction perpendicular to the surface of the wafer 101, where the wafer substrate 103 has low resistivity, the wafer substrate 103 may be used as one layer of the first electrode plates 111, that is, a layer of the second dielectric layer 113, a layer of the second electrode plates 112, a layer of the second dielectric layer 113, and a layer of the first electrode plates 111 are sequentially stacked from bottom to top on the wafer substrate 103 in the deep trenches, so as to form a capacitor structure. Of course, in other embodiments, the substrate with low resistivity may also be used as the second plate, which is not limited in particular.
The material of the wafer may be a semiconductor material such as silicon, silicon carbide, gallium arsenide, etc., and of course, the material of the wafer may also be an insulating material such as glass, quartz, etc.
It should be further noted that structures such as thin columns, plate fins and the like can be further arranged in the deep trenches to increase the facing areas of the first polar plates and the second polar plates in the capacitor structure, so that the specific surface area of the capacitor structure is increased.
Further, referring to fig. 4 and 5, in the MEMS capacitive unit 110a, in addition to the capacitive structure, a third dielectric layer 114 and a conductive layer are further included, and the conductive layer includes a first conductive portion 115 and a second conductive portion 116 that are electrically isolated. The third dielectric layer 114 is disposed on the first polar plate 111 or the second polar plate 112 of the capacitor structure, at least one or more first polar plate connecting through holes 117 corresponding to the first conductive parts 115 and one or more second polar plate connecting through holes 118 corresponding to the second conductive parts 116 are disposed on the third dielectric layer 114 in a penetrating manner, the first polar plate connecting through holes 117 and the second polar plate connecting through holes 118 are disposed at intervals, each layer of the first polar plate 111 is exposed through the first polar plate connecting through holes 117, each layer of the second polar plate 112 is exposed through the second polar plate connecting through holes 118, so that the first conductive parts 115 penetrate through the first polar plate connecting through holes 117, one end of each first polar plate connecting through holes 117 is connected with each layer of the first polar plate 111 in the capacitor structure, the first polar plate 111 and the first conductive parts 115 form a first terminal of the MEMS capacitor unit, and the other end of each first conductive part 115 is connected with the routing layer 120; the second conductive portion 116 is disposed through the second plate connection via 118, one end of the second conductive portion is electrically connected to the second plate 112 of each layer in the capacitor structure through the second plate connection via 118, the second plate 112 and the second conductive portion 116 form a second terminal of the MEMS capacitor unit, and the other end of the second conductive portion 116 is connected to the trace layer 120.
In the present embodiment, the shape, size, number and arrangement of the first electrode plate connecting holes and the second electrode plate connecting holes are not limited. The number of the first plate connecting through holes and the second plate connecting through holes can be determined according to the number of layers of the first plate and the second plate, for example, when the first plate is one layer and the second plate is one layer, the first plate connecting through holes and the second plate connecting through holes are all required to be arranged one, the first conductive part is accommodated in the first plate connecting through holes to be connected with the first plate, and the second conductive part is accommodated in the second plate connecting through holes to be connected with the second plate. For another example, when the first polar plate is two layers and the second polar plate is one layer, two first polar plate connecting through holes are needed to be arranged, and of course, the two first polar plate connecting through holes are communicated, so that the first conductive part is accommodated in the two first polar plate connecting through holes, and is connected with one layer of first polar plate through one of the first polar plate connecting through holes and is connected with the other layer of first polar plate through the other first polar plate connecting through hole; in addition, one second-plate connecting through hole needs to be provided, and the second conductive portion is connected to the second plate through one second-plate connecting through hole.
It should be further noted that the through-arrangement positions of the first plate connection via and the second plate connection via may be designed according to the capacitor structure, for example, when the capacitor structure includes a layer of first plate and a layer of second plate, and the third dielectric layer is located on the second plate, the first plate connection via is through-arranged on the third dielectric layer and the second dielectric layer, so that the first plate is exposed, and the second plate connection via is through-arranged on the third dielectric layer, so that the second plate is exposed. For another example, when the capacitor structure includes two first plates and one second plate, and the third dielectric layer is located on the first plates, one of the first plate connecting through holes is penetrating through the third dielectric layer to expose the first plate on the uppermost layer, and the other first plate connecting through hole and the second plate connecting through hole are penetrating through the third dielectric layer and the second dielectric layer to expose the first plate and the second plate on the lowermost layer respectively. Of course, it should be understood that in other embodiments, there may be a case where the first plate connecting through hole and the second plate connecting through hole penetrate the first plate and/or the second plate to expose the first plate and the second plate.
It should be noted that, the second dielectric layer and the third dielectric layer may be made of a single dielectric material, such as silicon oxide, silicon nitride, hafnium oxide, zirconium oxide, or a combination of multiple dielectric materials, which is not limited in particular.
The material of the conductive layer may be a conductor with good conductivity and low resistivity, may be a metal such as aluminum, gold, copper, or the like, may be an alloy such as nickel-titanium alloy, copper-nickel alloy, or the like, or may be other materials.
Still further, referring to fig. 4 and 5, the MEMS capacitive unit 110a further includes a fourth dielectric layer 119 covered on the conductive layer, one or more first conductive portion connecting through holes 119a and one or more second conductive portion connecting through holes 119b are formed on the fourth dielectric layer 119 in a penetrating manner, the first conductive portion connecting through holes 119a are communicated with the first plate connecting through holes 117, and the second conductive portion connecting through holes 119b are communicated with the second plate connecting through holes 118, such that the first conductive portions 115 are accommodated in the first conductive portion connecting through holes 119a and the first plate connecting through holes 117, and the first conductive portions 115 are exposed through the first conductive portion connecting through holes 119a to connect the trace layer 120 to the first conductive portions 115 of the MEMS capacitive unit and thus to the first plate 111 in the capacitive structure; the second conductive portion 116 is accommodated in the second conductive portion connection via 119b and the second plate connection via 118, and the second conductive portion 116 is exposed through the second conductive portion connection via 119b, so that the trace layer 120 is connected to the second conductive portion 116 of the MEMS capacitive unit and further connected to the second plate 112 in the capacitive structure.
In the present embodiment, the fourth dielectric layer may be made of a single dielectric material, such as silicon oxide, silicon nitride, hafnium oxide, zirconium oxide, or the like, or may be made of a combination of a plurality of dielectric materials, and is not limited thereto.
In this embodiment, the shape, size, number and arrangement of the first conductive portion connecting through holes and the second conductive portion connecting through holes are not limited, and may be specifically set according to the number, arrangement and the like of the first conductive portions and the second conductive portions.
As shown in fig. 17 and 18, another aspect of the present disclosure proposes a method S100 for manufacturing a MEMS element, including the following specific steps S110 to S140:
S110, forming a plurality of MEMS units on one or more wafers.
It should be noted that the closely-spaced MEMS units fabricated on a wafer may all be one device, such as MEMS capacitors, or may include some device, or another device, such as MEMS capacitors, MEMS inductors, MEMS resistors, and the like.
It should be further noted that, in order to facilitate dicing, a scribe line is provided between each MEMS unit on the wafer, after the fabrication of the desired MEMS element is completed, only the scribe line between each MEMS element is exposed, the scribe line between the MEMS units inside each MEMS element is covered by the first dielectric layer and the trace layer, during processing, the desired MEMS element can be diced along the scribe line and obtained, and besides the dicing is facilitated, the trace layer can be arranged on the scribe line inside the MEMS element, so as to facilitate connection of each MEMS unit inside the MEMS element.
In some preferred embodiments, a plurality of MEMS capacitive units are formed on a wafer, for example, as follows: referring to fig. 2 to 7 together, a wafer 101 having one or more deep trenches is provided, a first electrode plate 111, a second dielectric layer 113, a second electrode plate 112, a second dielectric layer 113, and a first electrode plate 111 are sequentially formed in the deep trenches by using multiple masks, so as to form a capacitor structure, then a third dielectric layer 114 is formed on the first electrode plate 111 of the capacitor structure by using multiple masks, a first electrode plate connection through hole 117 and a second electrode plate connection through hole 118 are formed on the third dielectric layer 114 and the second dielectric layer 113, so that the first electrode plate 111 and the second electrode plate 112 are exposed, a conductive layer is formed on the third dielectric layer 114, a fourth dielectric layer 119 is formed on the conductive layer, and a first conductive portion connection through hole 119a and a second conductive portion connection through hole 119b are formed on the fourth dielectric layer 119, so that the first conductive portion 115 and the second conductive portion 116 on the conductive layer are exposed, and the MEMS capacitor unit 110a is completed, wherein the first electrode plate 115 and the second electrode plate 111 and the second electrode plate 112 a form the capacitor unit 110.
It should be understood that, in the present embodiment, the MEMS capacitive unit is not limited to the structure described above, but the first electrode plate and the second electrode plate including other layers may be provided, which is not limited in particular, and the plurality of MEMS capacitive units in each MEMS element may be the same or different.
And S120, forming a wiring layer on one or more MEMS units, wherein the MEMS units are electrically connected through the wiring layer.
Specifically, taking the formation of a wiring layer on a plurality of MEMS capacitive units as an example, determining the size and the capacitance of the MEMS element according to the requirements of customers, designing a mask for manufacturing the wiring layer, processing a wafer on which the MEMS capacitive units 110a are manufactured, forming wiring parts 120 on the first terminals and the second terminals of one or more MEMS capacitive units 110a through the mask, and completing the electrical connection of each MEMS capacitive unit 110a through the wiring parts 120, for example, electrically connecting each MEMS capacitive unit through at least one of series connection, parallel connection and series-parallel connection, so as to realize the formation of the MEMS capacitive elements with different sizes and capacitance.
In some preferred embodiments, a wiring layer may be fabricated that connects a plurality of MEMS capacitive units in any one of series, parallel, and series-parallel connection, and each MEMS capacitive unit is connected by the wiring layer to form a set of MEMS capacitive units.
In other preferred embodiments, a wiring layer may be further formed to connect a plurality of MEMS capacitive units in at least one of series, parallel, and series-parallel connection, and each MEMS capacitive unit is connected to form a plurality of groups of MEMS capacitive units through the wiring layer.
It should be understood that, in the present embodiment, the wiring layer is not limited to being formed on the plurality of MEMS capacitive units, but may be formed on the plurality of MEMS capacitive units, the plurality of MEMS resistive units, and the plurality of MEMS inductive units, the specification of the MEMS element is determined according to the customer requirement, a mask for manufacturing the wiring layer is designed, and the wafer on which the plurality of MEMS capacitive units, the plurality of MEMS resistive units, and the plurality of MEMS inductive units have been manufactured is processed.
S130, forming a first dielectric layer on the wiring layer, and forming one or more first electrode connecting through holes and one or more second electrode connecting through holes on the first dielectric layer at intervals.
Specifically, the formation process of the first electrode connection via and the second electrode connection via is as follows: as shown in fig. 5 to 6, a mask for manufacturing a first dielectric layer, a first electrode connection via hole and a second electrode connection via hole is designed, a first dielectric layer 150 is formed on a wiring layer 120 through the mask, one or more first electrode connection via holes 151 and one or more second electrode connection via holes 152 are formed on the first dielectric layer 150 through other two masks, the first electrode connection via holes 151 and the second electrode connection via holes 152 are arranged at intervals, and the wiring layer 120 with the exposed portions covered by the first dielectric layer 150 is exposed through the first electrode connection via holes 151 and the second electrode connection via holes 152, so that conduction between each electrode and the wiring layer is realized through each connection via hole.
In the present embodiment, the number of the first electrode connection through holes and the second electrode connection through holes is not particularly limited, and may be set according to the number of the first electrodes and the second electrodes required by the customer. For example, when the number of the first electrodes and the second electrodes is one, the number of the first connecting through holes and the second connecting through holes is also one, and when the number of the first electrodes and the second electrodes is plural, the number of the first connecting through holes and the second connecting through holes is also plural.
And S140, correspondingly forming one or more first electrodes in the one or more first electrode connecting through holes, and correspondingly forming one or more second electrodes in the one or more second electrode connecting through holes.
Specifically, referring to fig. 6 to 7 together, the first electrode and the second electrode are formed as follows: a first electrode 130 is correspondingly formed in each first electrode connection through hole 151, and a second electrode 140 is correspondingly formed in each second electrode connection through hole 152, so that the first electrode 130, the second electrode 140 and the wiring layer 120 are connected, and the first electrode 130 and the second electrode 140 are mutually insulated.
In this embodiment, the number of the first electrodes, the number of the second electrodes, and the arrangement of the first electrodes and the arrangement of the second electrodes in the MEMS element are not limited, and one first electrode and one second electrode, or a plurality of first electrodes and a plurality of second electrodes, which are fewer than the number of MEMS units, may be used to control all the MEMS capacitive units in the whole MEMS element through two electrodes or a small number of electrodes. Of course, a plurality of first electrodes and a plurality of second electrodes, which are equal to the number of MEMS elements, may be provided, and a plurality of first electrodes and a plurality of second electrodes, which are greater than the number of MEMS elements, may be provided, so as to realize complex MEMS element combinations and voltage control.
In the present embodiment, the trace layer on each MEMS element on the wafer may be designed to be disconnected from each other and diced during the process of manufacturing the trace layer, the first dielectric layer, the first electrode connection via, the second electrode connection via, the first electrode and the second electrode, so as to manufacture a MEMS element including only one MEMS element, or the trace layer may be manufactured so as to complete electrical connection to a plurality of MEMS elements, and dicing may be performed so as to obtain a MEMS element including a plurality of MEMS elements.
It should be noted that, in this embodiment, the number of MEMS units included in each MEMS element on the same wafer after all the process steps of dicing are completed, i.e., the number of MEMS units included in each MEMS element on the wafer after all the process steps of dicing are completed may be the same or different.
In this embodiment, one or more MEMS units which are densely arranged, insulated from each other and connected through a substrate are manufactured on one or more wafers based on one set of masks and manufacturing process, then the size and specification of the finished MEMS element are determined according to the requirements of customers, only a few masks are needed to be designed, the wafers on which the MEMS units are manufactured are processed, a small number of subsequent processes such as forming wiring layers to realize electrical connection of the MEMS units, electrode manufacturing and the like are completed, so that MEMS elements required by customers are manufactured on the wafers, and dicing is performed according to the sizes and specifications required by customers, thereby rapidly completing the manufacture of MEMS elements of different specifications in large quantity, and reducing the research and development costs and time periods of MEMS elements of different specifications and different sizes.
Further, according to the method of manufacturing the present embodiment, MEMS elements of different specifications, for example, MEMS 3D capacitor elements of 0.6×0.3mm 2、1.2*0.6mm2、1.8*0.9mm2、2.4*1.2mm2, etc. can be manufactured, and of course, MEMS elements of other specifications can be formed, which is not particularly limited.
The structure of the MEMS element will be further described in connection with several specific embodiments:
Example 1
In this example, a MEMS element formed by connecting four MEMS units with one first electrode and one second electrode based on a wiring layer is taken as an example for illustration, and the specific structure is as follows:
As shown in fig. 8 to 10, the MEMS element 100 includes four MEMS capacitive units 110a and a wiring layer 120 covering the four MEMS capacitive units 110a, a first electrode 130, a second electrode 140, and a first dielectric layer 150 disposed on the wiring layer 120; the trace layer 120 includes a first trace portion 121 and a second trace portion 122, and a first electrode connection through hole 151 and a second electrode connection through hole 152 are disposed on the first dielectric layer 150 at intervals, the first electrode 130 is disposed through the first electrode connection through hole 151 and electrically connected to the first trace portion 121, and further electrically connected to a first terminal (the first terminal includes a first conductive portion and the first electrode plate 111) through a first conductive portion connection through hole 119a in the MEMS capacitive unit 110a, and the second electrode 140 is disposed through the second electrode connection through hole 152 and electrically connected to the second trace portion 122, and further electrically connected to a second terminal (the second terminal includes a second conductive portion and the second electrode plate 112) through a second conductive portion connection through hole 119b in the MEMS capacitive unit.
With continued reference to fig. 10, the circuit connection of the four MEMS capacitive units, the first electrode and the second electrode based on the trace layer is as follows: the first electrode plates 111 of the four MEMS capacitive units 110a are connected to the first electrode 130 in parallel through the first routing portion 121, and the second electrode plates 112 of the four MEMS capacitive units 110a are connected to the second electrode 140 in parallel through the second routing portion 122, that is, the electrical connection between the four MEMS capacitive units is completed in a parallel manner through the routing layer to form a group of MEMS capacitive units, and meanwhile, the electrical connection between the group of MEMS capacitive units and one first electrode and one second electrode is realized through the routing layer, so that the use is more flexible.
Example 2
In this example, a MEMS element formed by connecting four MEMS capacitive units with a first electrode and a second electrode based on a wiring layer is taken as an example for illustration, and the specific structure is as follows:
As shown in fig. 11 and 12, the MEMS element 100 includes four MEMS capacitive units 110a, a wiring layer 120 covering the four MEMS capacitive units 110a, a first electrode 130, a second electrode 140, and a first dielectric layer 150 disposed on the wiring layer 120; the trace layer 120 includes a first trace 121, a second trace 122, and a third trace 123, and a first electrode connection via 151 and a second electrode connection via 152 are disposed on the first dielectric layer 150 at intervals, the first electrode 130 is disposed through the first electrode connection via 151 to be electrically connected with the first trace 121, and is further electrically connected with a first terminal (the first terminal includes a first conductive portion and a first electrode plate 111) through a first conductive portion connection via 119a in the MEMS capacitive unit 110a, and the second electrode 140 is disposed through the second electrode connection via 152 to be electrically connected with the second trace 122, and is further electrically connected with a second terminal (the second terminal includes a second conductive portion and a second electrode plate 112) through a second conductive portion connection via 119b in the MEMS capacitive unit 110 a.
With continued reference to fig. 12, the circuit connection of the four MEMS capacitive units, the first electrode and the second electrode based on the trace layer is as follows: the first electrode plate 111 in one of the MEMS capacitive units 110a is connected to the first electrode 130 through the first routing portion 121, the second electrode plate 112 in the other MEMS capacitive unit 110a is connected to the second electrode 140 through the second routing portion 122, the second electrode plate 112 in the one MEMS capacitive unit 110a, the first electrode plate 111 in the remaining two MEMS capacitive units 110a, the second electrode plate 112 and the first electrode plate 111 in the other MEMS capacitive unit are sequentially connected in series through the third routing portion 123, that is, the electrical connection between the four MEMS capacitive units is completed in a series manner through the routing layer to form a group of MEMS capacitive units, and meanwhile, the group of MEMS capacitive units is electrically connected with one first electrode and one second electrode through the routing layer, so that the use is more flexible.
Example 3
In this example, a MEMS element formed by connecting four MEMS capacitive units with a first electrode and a second electrode based on a wiring layer is taken as an example for illustration, and the specific structure is as follows:
As shown in fig. 13 and 14, the MEMS element 100 includes four MEMS capacitive units 110a, a wiring layer 120 covering the four MEMS capacitive units 110a, a first electrode 130, a second electrode 140, and a first dielectric layer 150 disposed on the wiring layer 120; the trace layer 120 includes a first trace 121, a second trace 122, and a third trace 123, and a first electrode connection via 151 and a second electrode connection via 152 are disposed on the first dielectric layer 150 at intervals, the first electrode 130 is disposed through the first electrode connection via 151 to be electrically connected with the first trace 121, and is further electrically connected with a first terminal (the first terminal includes a first conductive portion and a first electrode plate 111) through a first conductive portion connection via 119a in the MEMS capacitive unit 110a, and the second electrode 140 is disposed through the second electrode connection via 152 to be electrically connected with the second trace 122, and is further electrically connected with a second terminal (the second terminal includes a second conductive portion and a second electrode plate 112) through a second conductive portion connection via 119b in the MEMS capacitive unit 110 a.
With continued reference to fig. 14, the circuit connection of the four MEMS capacitive units, the first electrode and the second electrode based on the trace layer is as follows: the first electrode plates 111 of the two MEMS capacitive units 110a are connected in parallel to the first electrode 130 through the first routing portion 121, the second electrode plates 112 of the other two MEMS capacitive units 110a are connected in parallel to the second electrode 140 through the second routing portion 122, the second electrode plates 112 of the two MEMS capacitive units 110a and the first electrode plates 111 of the other two MEMS capacitive units 110a are connected in series through the third routing portion 123, that is, the electrical connection between the four MEMS capacitive units is completed in a series-parallel manner through the routing layer to form a group of MEMS capacitive units, and meanwhile, the electrical connection between the group of MEMS capacitive units and one first electrode and one second electrode is realized through the routing layer, so that the use is more flexible.
Example 4
The present example is described by taking a MEMS element formed by connecting a MEMS capacitive unit, a MEMS inductive unit, a MEMS resistive unit, and a first electrode and a second electrode based on a wiring layer as an example, and the specific structure is as follows:
As shown in fig. 15 and 16, the MEMS element 100 includes a MEMS capacitive element 110a, a MEMS resistive element 110b, a MEMS inductive element 110c, and a trace layer 120 covering the three MEMS elements, a first electrode 130, a second electrode 140, and a first dielectric layer 150 disposed on the trace layer 120; the trace layer includes a first trace portion 121, a second trace portion 122, and a third trace portion 123, and a first electrode connection through hole 151 and a second electrode connection through hole 152 are disposed on the first dielectric layer 150 at intervals, the first electrode 130 is disposed through the first electrode connection through hole 151 to be electrically connected with the first trace portion 121 and further electrically connected with a first terminal of the MEMS unit, and the second electrode 140 is disposed through the second electrode connection through hole 152 to be electrically connected with the second trace portion 122 and further electrically connected with a second terminal of the MEMS unit.
With continued reference to fig. 16, the circuit connection of the three MEMS units and the first and second electrodes based on the trace layer is as follows: the first terminals of the MEMS capacitive unit 110a and the MEMS resistive unit 110b are electrically connected in parallel to the first electrode 130 through the first trace portion 121, the second terminals of the MEMS capacitive unit 110a and the MEMS inductive unit 110c are electrically connected in parallel to the second electrode 140 through the second trace portion 122, and simultaneously, the second terminal of the MEMS resistive unit 110b and the first terminal of the MEMS inductive unit 110c are electrically connected in series through the third trace portion 123. That is, the electrical connection between the three MEMS units is completed in a series-parallel manner through the wiring layer to form a group of MEMS units, and meanwhile, the group of MEMS units are electrically connected with a first electrode and a second electrode through the wiring layer, so that the MEMS unit is more flexible to use.
The disclosure provides a MEMS element and a manufacturing method thereof, which have the following beneficial effects compared with the prior art:
The MEMS element disclosed by the first embodiment of the invention can complete circuit connection among the MEMS units through the wiring layer, does not need to additionally design RDL or apply other lead modes in practical application, reduces the use cost of customers, and avoids the possibility of additionally introducing ESR or ESL; meanwhile, the circuit connection between the first electrode and the second electrode and the MEMS unit can be completed through the wiring layer, so that the arrangement of different numbers of electrodes is facilitated, the use is more flexible, and convenience is provided for the application of customers;
Secondly, based on the manufacturing method disclosed by the invention, when manufacturing MEMS elements with different specifications, which can be obtained by arranging and combining a plurality of MEMS units, only a small number of masks are required to be additionally designed, and corresponding processing is carried out on wafers manufactured by the MEMS units.
It is to be understood that the above embodiments are merely exemplary embodiments employed to illustrate the principles of the present disclosure, however, the present disclosure is not limited thereto. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the disclosure, and are also considered to be within the scope of the disclosure.
Claims (12)
1. A MEMS element, comprising: the MEMS device comprises one or more MEMS units, a wiring layer arranged on the MEMS units, and one or more first electrodes and one or more second electrodes which are arranged on one side of the wiring layer away from the MEMS units in an insulating manner, wherein the first electrodes and the second electrodes are arranged at intervals; wherein,
The first terminals of one or more MEMS units are electrically connected with the one or more first electrodes through the wiring layer, the second terminals of one or more MEMS units are electrically connected with the one or more second electrodes through the wiring layer, and a plurality of MEMS units are electrically connected through the wiring layer.
2. The MEMS element of claim 1, wherein the plurality of MEMS elements are electrically connected by the trace layer in at least one of series, parallel, and series-parallel connection.
3. The MEMS element of claim 1, wherein the trace layer comprises a first trace portion, a second trace portion, and a third trace portion; wherein,
The first terminal of one MEMS unit is electrically connected with the first electrode through the first wiring part, the second terminal of the other MEMS unit is electrically connected with the second electrode through the second wiring part, and the first terminal and the second terminal among a plurality of MEMS units are connected in series through the third wiring part.
4. The MEMS element of claim 1, wherein the trace layer comprises a first trace portion and a second trace portion;
The first terminals of the MEMS units are connected in parallel through the first wiring parts, and the first wiring parts are electrically connected with the first electrodes;
The second terminals of the MEMS units are connected in parallel through the second wiring parts, and the second wiring parts are electrically connected with the second electrodes.
5. The MEMS element of claim 1, wherein the trace layer comprises a first trace portion, a second trace portion, and a third trace portion;
First terminals of at least two MEMS units in the plurality of MEMS units are electrically connected to the first electrode in parallel through the first wiring part;
second terminals of at least two MEMS units in the MEMS units are electrically connected to the second electrode in parallel through the second wiring part, and the first electrode, the at least two MEMS units and the second electrode form at least two parallel circuits;
and the MEMS units in at least one parallel circuit are electrically connected in series through the third wiring part.
6. The MEMS element according to any one of claims 1-5, wherein the number of first and second electrodes is one.
7. The MEMS element according to any one of claims 1-5, wherein the trace layer is further provided with a first dielectric layer having one or more first electrode connection vias and one or more second electrode connection vias spaced apart therefrom;
The one or more first electrodes and the one or more second electrodes are respectively arranged in the corresponding one or more first electrode connecting through holes and the one or more second electrode connecting through holes in a penetrating mode.
8. A MEMS element according to any one of claims 1 to 5, wherein a plurality of the MEMS elements are adjoined by scribe line grooves.
9. The MEMS element of any one of claims 1-5, wherein the MEMS element is at least one of a MEMS capacitive element, a MEMS resistive element, and a MEMS inductive element.
10. The MEMS element of claim 9, wherein the MEMS capacitive element comprises one or more first plates, one or more second dielectric layers, a third dielectric layer, and first and second conductive portions; wherein,
The first polar plate and the second polar plate are overlapped in a staggered way, the second dielectric layer is arranged between the first polar plate and the second polar plate, and the third dielectric layer is arranged on one side of the first polar plate or the second polar plate, which is away from the second dielectric layer;
The first conductive part is insulated from the second conductive part and at least penetrates through the third dielectric layer, one end of the first conductive part is electrically connected with the first polar plate to form a first terminal, one end of the second conductive part is electrically connected with the second polar plate to form a second terminal, and the other ends of the first conductive part and the second conductive part are electrically connected with the wiring layer.
11. A method of fabricating a MEMS element, the method comprising:
forming a plurality of MEMS elements on one or more wafers;
Forming a wiring layer on one or more MEMS units, the plurality of MEMS units being electrically connected through the wiring layer;
Forming a first dielectric layer on the wiring layer, and forming one or more first electrode connecting through holes and one or more second electrode connecting through holes on the first dielectric layer at intervals;
One or more first electrodes are correspondingly formed in the one or more first electrode connecting through holes, and one or more second electrodes are correspondingly formed in the one or more second electrode connecting through holes.
12. The method of claim 11, wherein forming a wiring layer over the plurality of MEMS elements, comprises:
And forming wiring parts on the first terminals and the second terminals of the MEMS units, wherein the wiring parts are electrically connected with the MEMS units in at least one of series connection, parallel connection and series-parallel connection.
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