CN117895311A - High-energy-to-weight ratio cross flow type alkali metal vapor laser main oscillation amplifying system - Google Patents
High-energy-to-weight ratio cross flow type alkali metal vapor laser main oscillation amplifying system Download PDFInfo
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- CN117895311A CN117895311A CN202311683708.7A CN202311683708A CN117895311A CN 117895311 A CN117895311 A CN 117895311A CN 202311683708 A CN202311683708 A CN 202311683708A CN 117895311 A CN117895311 A CN 117895311A
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- 150000001340 alkali metals Chemical class 0.000 title claims abstract description 149
- 229910052783 alkali metal Inorganic materials 0.000 title claims abstract description 148
- 230000010355 oscillation Effects 0.000 title claims abstract description 72
- 238000005086 pumping Methods 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 230000003287 optical effect Effects 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 21
- 230000003321 amplification Effects 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 15
- 238000010168 coupling process Methods 0.000 claims description 15
- 238000005859 coupling reaction Methods 0.000 claims description 15
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 15
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 239000011591 potassium Substances 0.000 claims description 5
- 229910052701 rubidium Inorganic materials 0.000 claims description 5
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 2
- 230000005484 gravity Effects 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 230000005855 radiation Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000006552 photochemical reaction Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 239000013307 optical fiber Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Abstract
The invention discloses a high-energy-to-weight ratio cross-flow type alkali metal vapor laser main oscillation amplifying system, which comprises a cross-flow type alkali metal vapor tank, an alkali metal laser resonant cavity mirror, a 45-degree dichroic mirror and a semiconductor laser pumping source; the transverse flow type alkali metal vapor pool is used for providing a gain medium for the alkali metal vapor laser main oscillation amplifying system; the alkali metal laser resonant cavity lens provides a seed light source for the main oscillation amplifying system; one end surface of the 45-degree dichroic mirror is plated with a total reflection film with the center wavelength being the laser wavelength and an antireflection film with the center wavelength being the pumping wavelength, and the other end surface is plated with an antireflection film with the center wavelength being the pumping wavelength. The semiconductor laser pumping source comprises at least two semiconductor lasers which are respectively used as pumping sources of a seed stage and an amplifying stage of the cross-flow alkali metal vapor laser main oscillation amplifying system. The invention has small demand on heat radiation equipment, can greatly reduce the volume and weight of the system, and has the advantage of high energy-to-weight ratio.
Description
Technical Field
The invention belongs to the technical field of alkali metal vapor lasers, and relates to a high-energy-to-weight-ratio cross-flow alkali metal vapor laser main oscillation amplification system.
Background
An alkali metal laser is a three-level laser using alkali metal vapor as a gain medium and a narrow linewidth semiconductor laser as a pumping source, also often referred to as a semiconductor laser pumped alkali metal laser (Diode pumped alkali laser, DPAL). The alkali metal laser is considered as a reliable compact high-energy-weight-ratio (energy-weight-ratio) high-average-power (more than or equal to 1 MW) laser source because of a series of outstanding advantages of higher Stokes efficiency, smaller heat generation, better beam quality, compact structure, no toxicity of laser medium, low manufacturing cost of a vapor cell, high reusability, strong system reliability, laser wavelength (Cs): 894.95nm, rubidium (Rb): 794.98nm, potassium (K): 770.11 nm) in an atmospheric window and the like.
At present, in order to obtain a laser light source with good beam quality and high output power, a mode of amplifying a single-mode low-power seed laser source by setting up a laser main oscillation amplifying system is generally adopted. The seed stage and the gain medium of the amplifying stage of the high-power laser main oscillation amplifying system are usually solid or optical fibers and are mutually separated, so that the difficulty in installing and adjusting the optical path part of the system is high, and the requirement on heat dissipation equipment is high and complex. And the laser main oscillation amplification system adopting solid or optical fiber as the gain medium has higher heat generation capacity, and as the output power is increased, the more heat dissipation devices of the amplification system are, the higher the heat dissipation power is, so that the system volume and the weight are larger, the system weight is lower, and the engineering application of carrying a mobile platform is difficult.
Because the mixed gas (composed of alkali metal vapor and buffer gas) in the alkali metal vapor cell has low thermal conductivity, when high-power laser pumping is performed, local high temperature is extremely easy to form in the alkali metal vapor cell, so that the concentration of the alkali metal vapor in the vapor cell is rapidly increased, and the concentration of the third energy level (relaxation energy level) of the alkali metal atoms is mainly expressed as a higher particle number, which directly causes the absorption rate of the vapor cell to the pumping light to be reduced, thereby further reducing the light-light efficiency of the alkali metal laser. Meanwhile, the high temperature can also cause thermal phenomena such as alkali metal consumption in the vapor tank, laser power reduction, even stop oscillation, pollution and damage of an optical window of the vapor tank, and the like. Therefore, the heat generated in the alkali metal vapor tank during high-power laser pumping is timely taken away, and phenomena of photochemical reaction, alkali metal consumption, thermal effect, vapor tank damage and the like caused by local high temperature are prevented from being formed in the vapor tank, so that the high-power alkali metal laser is one of the main problems to be solved in the prior high-power alkali metal laser.
Disclosure of Invention
Object of the invention
The purpose of the invention is that: aiming at the current situation that the high-power laser light source can be carried on a mobile platform for engineering application difficultly due to low weight and huge volume weight, the scheme of the high-energy-weight-ratio cross-flow type alkali metal vapor laser main oscillation amplifying system is provided, and aims to solve the problems that the system energy-weight ratio is low and the volume weight is huge due to the fact that a high-power solid or fiber laser main oscillation amplifying system adopts a separated gain medium layout, the laser power is reduced, even oscillation is stopped, an optical window is polluted and damaged due to the fact that a vapor tank adopted by an alkali metal laser is subjected to local high temperature during high-power pumping.
(II) technical scheme
In order to solve the technical problems, the invention provides a high energy-to-weight ratio cross flow type alkali metal vapor laser main oscillation amplifying system, which comprises: the laser beam source comprises a semiconductor laser pump source 1, a laser total reflection mirror 3, an optical window 4, a laser output coupling mirror 5, a 45-degree dichroic mirror 7 and a cross flow alkali metal vapor cell 11.
The semiconductor laser pumping source 1 comprises at least two semiconductor lasers, which are respectively used for pumping gain media of a seed stage 8 and an amplifying stage 9 of the transverse flow type alkali metal vapor laser main oscillation amplifying system, the seed stage of the whole laser main oscillation amplifying system is formed by the semiconductor laser pumping source 1, the laser total reflection mirror 3, the transverse flow type alkali metal vapor tank 11 and the laser output coupling mirror 5, a seed laser source with better beam quality is provided for the system, and the seed laser 6, the semiconductor laser pumping source 1 and the transverse flow type alkali metal vapor tank 11 form the amplifying stage of the laser main oscillation amplifying system together to generate high-power laser.
The laser total reflection mirror 3, the semiconductor laser pumping source 1, the transverse flow alkali metal vapor tank 11 and the laser output coupling mirror 5 together form a seed level of the laser main oscillation amplifying system and are used for generating a seed laser source, one end surface of the seed laser source, which is close to pumping laser, is plated with an antireflection film with the center wavelength being pumping laser wavelength, and the other end surface is plated with an antireflection film with the center wavelength being pumping laser wavelength and a total reflection film with the center wavelength being seed laser wavelength.
The optical window 4 is located at two end faces of the cross-flow alkali metal vapor tank 11, and at least comprises two groups, which are respectively used for pumping laser and transmitting laser, and the joint of the optical window and the cross-flow alkali metal vapor tank 11 needs to be sealed in a proper sealing mode, so that impurities such as oxygen, water vapor and the like in the air are prevented from entering the cross-flow alkali metal vapor tank 11 to cause alkali metal consumption, and the normal operation of the laser main oscillation amplifying system is influenced.
The laser output coupling mirror 5, the semiconductor laser pumping source 1, the laser total reflection mirror 3 and the cross flow type alkali metal vapor pool 11 together form a seed level of the laser main oscillation amplifying system, and the seed level is used for generating seed laser, one end surface of the seed laser close to the cross flow type alkali metal vapor pool 11 is plated with a reflecting film with the center wavelength being the laser wavelength and a high reflecting film with the pumping laser wavelength, and the other end surface is plated with an antireflection film with the center wavelength being the laser wavelength.
The 45-degree dichroic mirror 7 is used for folding the pumping and laser light paths, one end surface of the dichroic mirror 7 is plated with a 45-degree incidence antireflection film with the center wavelength of pumping laser wavelength, and the other end surface is plated with a 45-degree incidence antireflection film with the center wavelength of pumping laser wavelength and a 45-degree incidence total reflection film with the laser wavelength.
The cross-flow type alkali metal vapor tank 11 is a container for containing alkali metal vapor and buffer gas, provides a gain medium for a seed stage and an amplifying stage of the laser main oscillation amplifying system, adopts a metal-glass composite structure, and is internally provided with a metal fan capable of homogenizing a temperature field to drive mixed gas in the vapor tank to flow so as to achieve the purpose of avoiding local high temperature phenomenon during high-power pumping. The cross flow type alkali metal vapor pool 11, the semiconductor laser pumping source 1, the laser total reflection mirror 3 and the laser output coupling mirror 5 form a seed stage of the laser main oscillation amplifying system together, and the cross flow type alkali metal vapor pool, the semiconductor laser pumping source 1 and the seed laser 6 form an amplifying stage of the laser main oscillation amplifying system together.
(III) beneficial effects
The high-energy-to-weight ratio cross flow type alkali metal vapor laser main oscillation amplifying system provided by the technical scheme has the following beneficial effects:
(1) In the invention, the light path of the cross flow type alkali metal vapor laser main oscillation amplifying system is low in adjustment difficulty and high in energy-to-weight ratio. The seed stage and the gain medium of the amplifying stage of the laser main oscillation amplifying system are provided by a cross flow alkali metal vapor pool, so that the heat generation quantity of alkali metal is low, the requirements on optical elements and heat dissipation equipment can be reduced, and the volume and the weight of the system are greatly reduced.
(2) In the invention, the high-power alkali metal laser beam generated by the cross-flow alkali metal vapor laser main oscillation amplifying system has excellent beam quality.
(3) In the invention, the frequency linewidth of the high-power alkali metal laser beam generated by the transverse flow alkali metal vapor laser main oscillation amplifying system is narrow, and the laser output frequency linewidth is common under the condition of not considering an externally added dispersion element: and the frequency is less than or equal to 20GHz.
(4) In the invention, the cross-flow type alkali metal vapor laser main oscillation amplifying system can output a plurality of high-power alkali metal lasers. Various alkali metal vapors such as potassium, rubidium, cesium and the like can be injected into the cross flow type vapor pool at the same time, and at least three high-power alkali metal lasers with different wavelengths can be generated by adopting a proper pumping structure.
(5) In the invention, the damage-resistant threshold of the cross-flow type alkali metal vapor laser main oscillation amplifying system is high. The cross flow type alkali metal vapor tank adopted by the system drives the mixed gas in the vapor tank to transversely flow through the built-in fan, so that the temperature field can be homogenized, the gas heat exchange efficiency is increased, the temperature difference in the tank is reduced, the local high temperature is avoided, the heat phenomena of alkali metal atom consumption, laser power reduction, pollution damage of an optical window and the like in the alkali metal vapor tank during high-power pumping are prevented, and the aim of improving the threshold value of the optical window is fulfilled.
(6) In the invention, the optimization cost of the cross-flow type alkali metal vapor laser main oscillation amplification system is low and the consumed time is short. The system adopts a cross flow type alkali metal vapor pool with low reusability, the proportion or type of atmosphere in the pool can be easily changed, the system is low in optimization cost, crystal materials are not required to be grown, and the time consumption is short.
(7) In the invention, the laser output performance of the cross-flow type alkali metal vapor laser main oscillation amplifying system is stable and reliable. The system adopts a flow field and a temperature field in a cross flow type alkali metal vapor pool, so that the laser output power fluctuation is small.
Drawings
FIG. 1 is a schematic diagram of a high energy to weight ratio cross-flow alkali metal vapor laser main oscillation amplification system.
Detailed Description
To make the objects, contents and advantages of the present invention more apparent, the following detailed description of the present invention will be given with reference to the accompanying drawings and examples.
The invention provides a scheme of a high-energy-to-weight-ratio cross-flow type alkali metal vapor laser main oscillation amplification system, which is used for solving the problems of complex system light path adjustment, huge volume and weight, low energy-to-weight ratio, local high-temperature and other heat phenomena in a vapor tank of an alkali metal vapor laser system during high-power pumping caused by adoption of gain medium separation type layout in the existing solid or fiber laser main oscillation amplification system and is combined with the characteristics of high alkali metal Stokes efficiency, low heat production capacity and the like. FIG. 1 is a schematic diagram of a high energy to weight ratio cross-flow alkali metal vapor laser main oscillation amplification system according to an embodiment of the present invention, comprising: the laser beam source comprises a semiconductor laser pump source 1, a pump laser beam 2, a laser total reflection mirror 3, an optical window 4, a laser output coupling mirror 5, seed laser 6, a 45-degree dichroic mirror 7, a seed stage 8 of a cross flow type alkali metal vapor laser main oscillation amplifying system, an amplifying stage 9 of the cross flow type alkali metal vapor laser main oscillation amplifying system, a laser beam 10 and a cross flow type alkali metal vapor tank 11.
The semiconductor laser pump source 1 is used as a pump source of a seed stage 8 and an amplifying stage 9 of a cross-flow type alkali metal vapor laser main oscillation amplifying system, the wavelength linewidth of the semiconductor laser pump source needs to be subjected to narrowing treatment, the linewidth after narrowing is matched with the linewidth of a D2 line of vapor atoms in a vapor tank widened by buffer gas so as to improve the utilization rate of pump laser, and the common linewidth is about 0.1nm.
The pump laser beam 2 is generated by the semiconductor laser source 1, and the beam spot in the geometric space of the pump laser beam is subjected to beam shaping treatment so as to improve the pattern matching efficiency of the pump light and the laser and increase the light-light efficiency of the laser main oscillation amplifying system.
The laser total reflection mirror 3 is used as a laser resonant cavity mirror and is used for generating seed laser 6 of a transverse flow type alkali metal vapor laser main oscillation amplifying system, one end surface of the seed laser 6, which is close to a pumping laser source, is plated with an antireflection film with the center wavelength being the pumping laser wavelength, and the other end surface is plated with an antireflection film with the center wavelength being the pumping laser wavelength and a total reflection film with the center wavelength being the seed laser wavelength.
The optical window 4 is located at two end faces of the cross-flow alkali metal vapor pool 11, and at least comprises two groups of pumping light and laser light respectively used for a seed stage 8 and an amplifying stage 9 of the cross-flow alkali metal vapor laser main oscillation amplifying system. The sealing of the optical window and the cross-flow alkali metal vapor pool should be specially made, so as to avoid oxidation of alkali metal caused by the entry of oxygen, water vapor and other impurities in the air outside the cavity into the cavity and the leakage of mixed gas in the cavity, and influence the performance of the laser system, and the ultimate vacuum degree at the optical window after sealing should be generally less than 10 < -3 > Pa.
The laser output coupling mirror 5 is used as a laser resonant cavity mirror and is used for generating seed laser 6 of the transverse flow type alkali metal vapor laser main oscillation amplifying system, one end surface of the seed laser 6, which is close to the transverse flow type alkali metal vapor tank 11, is plated with a reflecting film with the center wavelength being the laser wavelength and a high reflecting film with the pumping laser wavelength, and the other end surface is plated with an antireflection film with the center wavelength being the laser wavelength.
The seed laser 6 is generated by a seed stage 8 of the cross-flow type alkali metal vapor laser main oscillation amplifying system, and provides a low-power seed laser source with excellent beam quality for an amplifying stage 9 of the cross-flow type alkali metal vapor laser main oscillation amplifying system, and is used for generating high-power alkali metal laser with excellent beam quality.
The 45-degree dichroic mirror 7 is used for folding the pump light and the laser light path, one end surface of the dichroic mirror is plated with a 45-degree incident antireflection film with the center wavelength of the pump laser wavelength, and the other end surface is plated with a 45-degree incident total reflection film with the center wavelength of the pump laser wavelength and the laser wavelength.
The cross flow type alkali metal vapor laser main oscillation amplifying system 8 consists of a semiconductor laser pumping source 1, a laser total reflection mirror 3, a cross flow type alkali metal vapor tank 11 and a laser output coupling mirror 5, and is used for providing seed laser 6 for an amplifying stage 9 of the cross flow type alkali metal vapor laser main oscillation amplifying system.
The cross flow type alkali metal vapor laser main oscillation amplifying system 9 consists of a seed laser 6, a semiconductor laser pumping source 1 and a cross flow type alkali metal vapor tank 11 and is used for generating high-power alkali metal laser with excellent beam quality.
The laser beam 10 is generated by a cross-flow alkali metal vapor laser main amplification system.
The cross flow type alkali metal vapor tank 11 adopts a metal-glass composite structure, and a built-in fan drives mixed gas in the vapor tank to flow in a cross flow mode, so that the mixed gas is used for homogenizing the temperature field in the vapor tank, reducing the temperature difference and lowering the highest temperature, and avoiding the thermal phenomena of photochemical reaction, alkali metal consumption, laser power reduction, even stop oscillation, optical window pollution, damage, lower beam quality and the like in the vapor tank when high-power pumping occurs. The vapor tank cavity should avoid using the component that has greasy dirt to volatilize, each sealing member should consider the influence of high temperature corrosion environment to sealing performance, especially should pay attention to the sealing performance of built-in fan, guarantee under the high-speed high wind speed operating condition of high rotational speed, can not appear gaseous leakage and greasy dirt etc. impurity volatilize the condition that influences cavity gas tightness and laser system performance.
The mixed gas is composed of alkali metal vapor, typically potassium vapor, rubidium vapor, cesium vapor, and the above mixed gas, and buffer gas, which may be methane, ethane, helium, argon, and the mixed gas of the above gases, or the like.
In this embodiment, a module of the semiconductor laser pump source 1 subjected to wide-voltage and narrow-processing emits 1 pump laser beam, the pump laser beam 2 is formed by beam shaping, the pump laser beam is transmitted through the laser total reflection mirror 3, reaches a group of optical windows 4 of the cross-flow type alkali metal vapor cell 11, pumps alkali metal vapor atoms in the cross-flow type alkali metal vapor cell 11, and pump laser light remaining after being absorbed by the alkali metal vapor atoms exits from the optical windows 4 of the cross-flow type alkali metal vapor cell 11, reaches the surface of the laser output coupling mirror 5, and is reflected back into the cross-flow type alkali metal vapor cell 11. The laser composed of the semiconductor laser source 1, the laser total reflection mirror 3, the transverse flow type alkali metal vapor pool 11 and the laser output coupling mirror 5 is a seed stage 8 of the transverse flow type alkali metal vapor laser main oscillation amplifying system and is used for generating low-power seed laser 6 with excellent beam quality. The seed laser light 6 is reflected by two 45 deg. dichroic mirrors 7 and passes through another set of optical windows 4 of a cross-flow alkali metal vapor cell 11. The other module of the semiconductor laser pumping source 1 emits high-power pumping laser light which is transmitted through the 45-degree dichroic mirror, enters the cross-flow type alkali metal vapor cell 11 through the other group of optical windows 4 of the cross-flow type alkali metal vapor cell 11 and pumps alkali metal vapor atoms. The seed laser 6, the semiconductor laser pumping source 1 and the cross flow type alkali metal vapor pool 11 form an amplifying stage 9 of the cross flow type alkali metal vapor laser main oscillation amplifying system, and finally high-power alkali metal laser 10 is generated.
As can be seen from the technical scheme, the invention has the following remarkable characteristics:
1. the seed stage and the gain medium of the amplifying stage of the cross-flow type alkali metal vapor laser main amplifying system are alkali metal vapor, and are provided by a cross-flow type alkali metal vapor tank, so that the adoption of a separated gain medium layout is avoided, and the cross-flow type alkali metal vapor laser main amplifying system has the characteristics of simple light path adjustment, compact structure and high energy-to-weight ratio.
2. The cross-flow type alkali metal vapor laser main oscillation amplifying system provided by the invention adopts alkali metal vapor as a gain medium, has high beam quality and is superior to a solid laser main oscillation amplifying system.
3. The cross flow type alkali metal vapor Chi Neng homogenizing temperature field of the cross flow type alkali metal vapor laser main oscillation amplifying system provided by the invention improves the heat exchange efficiency of mixed gas in a tank, reduces the temperature difference, reduces the highest temperature in the tank, inhibits the pollution of an optical window, increases the damage threshold of the optical window, and avoids the phenomena of photochemical reaction of alkali metal.
4. The cross flow type alkali metal vapor laser main oscillation amplifying system provided by the invention has the advantages of stable temperature field, stable flow field and stable output performance of a laser system in a cross flow type alkali metal vapor tank.
5. The transverse flow type alkali metal vapor laser main amplification system provided by the invention has the advantage of narrow line width of laser frequency. The D1 line emission section of the alkali metal vapor atom is narrow, and the line width of the output frequency is generally less than or equal to 20GHz under the condition of no additional dispersive element.
6. The cross-flow type alkali metal vapor tank of the cross-flow type alkali metal vapor laser main oscillation amplifying system provided by the invention adopts a metal-glass composite structure, so that the atmosphere type and proportion in the vapor tank can be changed at will, and the optimizing cost of the system is low and the time consumption is short.
7. The cross flow type alkali metal vapor laser main oscillation amplification system provided by the invention can simultaneously realize multi-wavelength high-power alkali metal laser output, mixed alkali metal vapor containing potassium, rubidium, cesium and the like can be simultaneously injected into the cross flow type alkali metal vapor tank, and high-power alkali metal lasers with at least three wavelengths can be realized.
8. The cross flow type alkali metal vapor laser main oscillation amplifying system provided by the invention can realize a multi-stage amplifying scheme by arranging a plurality of groups of optical windows at two ends of a cross flow type alkali metal vapor tank and combining with a 45-degree dichroic mirror.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (10)
1. The utility model provides a high energy to weight ratio cross flow alkali metal vapor laser main oscillation amplification system which characterized in that includes: the laser beam source comprises a semiconductor laser pump source, a laser total reflecting mirror, an optical window, a laser output coupling mirror, a 45-degree dichroic mirror and a cross-flow alkali metal vapor cell; at least two groups of optical windows are arranged on the cross flow type alkali metal vapor pool, one side of one group of optical windows is provided with a 45-degree dichroic mirror, two sides of the other optical windows are respectively provided with a laser total reflection mirror and a laser output coupling mirror, the outer side of the laser total reflection mirror is provided with a semiconductor laser pumping source, the outer side of the laser output coupling mirror is provided with a 45-degree dichroic mirror, and all the 45-degree dichroic mirrors are arranged on the same side of the cross flow type alkali metal vapor pool.
2. The high energy to gravity ratio cross flow alkali metal vapor laser main oscillation amplifying system according to claim 1, wherein a semiconductor laser pumping source is arranged outside the 45 ° dichroic mirror at one side of the optical window.
3. The high energy-to-weight ratio cross flow type alkali metal vapor laser main oscillation amplifying system according to claim 2, wherein the cross flow type alkali metal vapor tank, the laser output coupling mirror, the laser total reflection mirror and the semiconductor laser pump source outside the laser total reflection mirror form a seed stage of the main oscillation amplifying system; the cross flow alkali metal vapor pool, the 45-degree dichroic mirror and the semiconductor laser pump source outside the 45-degree dichroic mirror form an amplifying stage of the main oscillation amplifying system.
4. The high-energy-to-gravity ratio cross-flow alkali metal vapor laser main oscillation amplification system as claimed in claim 3, wherein the surface of the laser total reflection mirror close to the incidence end of the pumping laser is coated with an antireflection film with the center wavelength being the pumping laser wavelength, and the other surface is coated with a total reflection film with the center wavelength being the laser wavelength and an antireflection film with the pumping laser wavelength.
5. The high energy to gravity ratio cross flow alkali metal vapor laser main oscillation amplifying system according to claim 4 wherein one of the at least two sets of optical windows is used for pumping beam transmission of a seed stage of the main oscillation amplifying system and the other set is used for laser beam transmission of an amplifying stage of the main oscillation amplifying system.
6. The system of claim 5, wherein the laser output coupling mirror is disposed near an end surface of the cross-flow alkali vapor cell and is coated with a reflective film having a center wavelength of the laser wavelength and a high reflective film having a pump laser wavelength, and the other end surface is coated with an antireflection film having a center wavelength of the laser wavelength.
7. The system of claim 6, wherein the 45 ° dichroic mirror is used for folding the alkali vapor laser light path, one end surface of the 45 ° incident total reflection film with a center wavelength of the laser wavelength and the 45 ° incident antireflection film with a center wavelength of the pump laser wavelength are coated, and the other end surface of the 45 ° incident antireflection film with a center wavelength of the pump laser wavelength is coated.
8. The high energy-to-weight ratio cross flow type alkali metal vapor laser main oscillation amplifying system according to claim 7, wherein the cross flow type alkali metal vapor tank provides gain medium for a seed stage and an amplifying stage of the main oscillation amplifying system, the cross flow type alkali metal vapor tank adopts a metal-glass composite structure, and a fan is arranged in the cross flow type alkali metal vapor tank to drive mixed gas in the vapor tank to flow in a cross flow mode.
9. The high energy to weight ratio cross flow alkali metal vapor laser main oscillation amplification system of claim 8, wherein the mixed gas in the cross flow alkali metal vapor cell comprises alkali metal vapor and buffer gas.
10. The high energy-to-weight ratio cross-flow type alkali metal vapor laser main oscillation amplification system of claim 9, wherein the alkali metal vapor is one or a mixture of a plurality of potassium vapor, rubidium vapor and cesium vapor, and the buffer gas is one or a mixture of a plurality of methane, ethane, helium and argon.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311683708.7A CN117895311A (en) | 2023-12-10 | 2023-12-10 | High-energy-to-weight ratio cross flow type alkali metal vapor laser main oscillation amplifying system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311683708.7A CN117895311A (en) | 2023-12-10 | 2023-12-10 | High-energy-to-weight ratio cross flow type alkali metal vapor laser main oscillation amplifying system |
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| CN117895311A true CN117895311A (en) | 2024-04-16 |
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| CN202311683708.7A Pending CN117895311A (en) | 2023-12-10 | 2023-12-10 | High-energy-to-weight ratio cross flow type alkali metal vapor laser main oscillation amplifying system |
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2023
- 2023-12-10 CN CN202311683708.7A patent/CN117895311A/en active Pending
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