CN117895310A - Compact long cavity Cheng Duolu pump alkali metal laser - Google Patents
Compact long cavity Cheng Duolu pump alkali metal laser Download PDFInfo
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- CN117895310A CN117895310A CN202311683707.2A CN202311683707A CN117895310A CN 117895310 A CN117895310 A CN 117895310A CN 202311683707 A CN202311683707 A CN 202311683707A CN 117895310 A CN117895310 A CN 117895310A
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- 229910052783 alkali metal Inorganic materials 0.000 title claims abstract description 127
- 150000001340 alkali metals Chemical class 0.000 title claims abstract description 127
- 238000005086 pumping Methods 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims description 39
- 230000008878 coupling Effects 0.000 claims description 14
- 238000010168 coupling process Methods 0.000 claims description 14
- 238000005859 coupling reaction Methods 0.000 claims description 14
- 239000002131 composite material Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 18
- 239000003513 alkali Substances 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- 229910052792 caesium Inorganic materials 0.000 description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000006552 photochemical reaction Methods 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 229910052701 rubidium Inorganic materials 0.000 description 3
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
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- 239000000835 fiber Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- -1 rare earth ion Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/031—Metal vapour lasers, e.g. metal vapour generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/227—Metal vapour
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention discloses a compact long cavity Cheng Duolu pumped alkali metal laser, which comprises a transverse flow alkali metal vapor tank, an alkali metal laser resonant cavity mirror, at least two 45-degree dichroic mirrors and a semiconductor laser pumping source, wherein the transverse flow alkali metal vapor tank is used for providing a gain medium for the alkali metal laser, the alkali metal laser resonant cavity mirror is used for forming laser resonance and carrying out mode selection, the 45-degree dichroic mirrors are used for folding and separating pumping and laser beams, the semiconductor laser pumping source is a narrow-wavelength linewidth semiconductor laser adopting a linewidth narrowing technology and is used for exciting alkali metal vapor atoms to form particle number inversion, and the laser is one of three elements of laser. The compact long cavity Cheng Duolu pump alkali metal laser scheme disclosed by the invention can select proper pump module quantity according to the power level, volume and weight requirements of a laser system.
Description
Technical Field
The invention belongs to the technical field of alkali metal lasers, and relates to a compact long cavity Cheng Duolu pump alkali metal laser.
Background
At present, rare earth ion doped solid or optical fiber lasers, laser gain media of gas lasers, optical windows and other components have lower laser damage resistance threshold values, and the phenomena such as damage and the like are extremely easy to occur during high-power laser pumping, so that the single-tube output power of the lasers is limited to a certain extent. In order to obtain a higher high-power laser source, a scheme of combining multiple gain media such as laser main oscillation amplification is generally adopted.
The seed stage and the amplifying stage of the high-power laser main oscillation amplifying system generally adopt mutually separated solids or optical fibers as gain media, the system light path part is high in adjustment difficulty, the requirement on heat dissipation equipment is high and complex, the heat generation quantity of the system is high, and as the output power is increased, the more the heat dissipation equipment of the amplifying system is, the higher the heat dissipation power is, so that the system is large in volume and weight, the system can be low in weight, and the engineering application carried on a mobile platform is difficult.
An alkali metal laser is a three-level laser using alkali metal vapor as a gain medium and a narrow linewidth semiconductor laser as a pumping source, also often referred to as a semiconductor laser pumped alkali metal laser (Diodepumped alkali laser, DPAL). The alkali metal laser is considered as a reliable high-energy-weight-ratio compact high-average-power (more than or equal to 1 MW) laser source because of a series of outstanding advantages of higher Stokes efficiency, smaller heat generation, better beam quality, compact structure, non-toxic laser medium, low manufacturing cost of a vapor cell, high reusability, strong system reliability, laser wavelength (K): 770.11nm; rb): 794.98nm; cesium (Cs): 894.95 nm) in an atmospheric window and the like.
However, since the mixed gas (composed of alkali vapor and buffer gas) in the alkali vapor cell has low thermal conductivity, a local high temperature is extremely easily formed in the alkali vapor cell during high-power laser pumping, causing a rapid increase in the alkali vapor concentration in the vapor cell and a higher particle number concentration of the third energy level (relaxation energy level) mainly represented by alkali atoms, which directly causes a decrease in the absorption rate of pump light by the vapor cell, thereby further decreasing the light-light efficiency of the alkali laser. Meanwhile, the high temperature can also cause thermal phenomena such as alkali metal consumption in the vapor tank, laser power reduction, even stop oscillation, pollution and damage of an optical window of the vapor tank, and the like. Therefore, the heat generated in the alkali metal vapor tank during high-power laser pumping is timely taken away, and phenomena of photochemical reaction, alkali metal consumption, thermal effect, vapor tank damage and the like caused by local high temperature are prevented from being formed in the vapor tank, so that the high-power alkali metal laser is one of the main problems to be solved in the prior high-power alkali metal laser.
Disclosure of Invention
Object of the invention
The purpose of the invention is that: aiming at the current situation that the high-power laser light source can be carried on a mobile platform for engineering application due to low weight and huge volume and weight, the invention provides a compact long-cavity Cheng Duolu pump alkali metal laser, which aims to solve the problems that a high-power laser system adopting a separated gain medium is complex in structure, large in optical adjustment difficulty, huge in volume, low in weight and difficult to carry on the mobile platform for engineering application.
(II) technical scheme
In order to solve the technical problems, the invention provides a compact long cavity Cheng Duolu pump alkali metal laser.
The invention adopts a single transverse flow type alkali metal vapor pool to provide multi-stage independently pumped gain media, reduces the pumping pressure of a high-power alkali metal laser system, improves the output power of a single tube, avoids the defect of larger volume of the high-power laser system of the traditional separated gain medium layout, greatly improves the energy-to-weight ratio of the high-power alkali metal laser system, is very suitable for carrying a mobile platform for engineering application, and simultaneously adopts the transverse flow type alkali metal vapor pool to enable mixed gas in the pool to flow, avoids the local high-temperature phenomenon and improves the stability of an alkali metal laser.
The compact long cavity Cheng Duolu pump alkali metal laser of the present invention comprises: the laser source comprises a semiconductor laser pump source 1, a pump laser beam 2, a laser total reflection mirror 3, an optical window 4, a 45-degree dichroic mirror 5, a laser beam 6, a laser output coupling mirror 7 and a cross-flow alkali metal vapor cell 8.
The semiconductor laser pumping source 1 adopts a line width narrowing technology to obtain pumping laser with narrower frequency line width so as to improve the utilization rate of the pumping light, and provides a plurality of groups of pumping modules according to the group number of the optical windows 4 arranged on the cross flow type vapor cell 8, so as to excite alkali metal vapor in the corresponding optical window group and achieve the purpose of improving the single-tube pumping limit.
The pump laser beam 2 is generated by a semiconductor laser pump source 1, is transmitted into a cross-flow alkali metal vapor pool 8 through a beam shaping system formed by an optical lens, pumps alkali metal vapor atoms, forms stimulated radiation and generates alkali metal laser.
The laser total reflection mirror 3 and the output coupling mirror 7 constitute a laser resonator mirror, and are one of three elements for generating alkali metal laser. According to the power level of the alkali metal laser system and the pumping requirement, two coating modes can be adopted for the two end surfaces of the laser total reflecting mirror: the first is to plate an antireflection film with the center wavelength being the wavelength of pumping light on one end surface of the total reflection mirror, and plate an antireflection film with the center wavelength being the wavelength of pumping light and a total reflection film with the center wavelength being the wavelength of laser on the other end surface, so that the mode can be used for forming a laser resonant cavity and transmitting pumping laser for a laser system with higher power level; the second is to plate a total reflection film with the center wavelength being the laser wavelength on only one end surface of the reflector, and the total reflection film is only used for forming a laser resonant cavity.
Wherein the optical window 4 is positioned at two end faces of the cross flow alkali metal vapor pool 8, and at least comprises two groups for pumping and transmitting laser beams. The central axis of any optical window 4 is parallel to the central axis of the cross-flow type alkali metal vapor tank 8, two optical windows 4 with the central connecting line of the optical windows 4 parallel to the central axis of the cross-flow type vapor tank 8 are a group of optical window groups, alkali metal vapor between each group of optical windows 4 forms a gain medium of an alkali metal laser system, and the purposes of forming a plurality of gain mediums in a single vapor tank to carry out multi-channel pumping and improving gain and injection energy are achieved by arranging a plurality of groups of optical windows 4 in the cross-flow type alkali metal vapor tank 8.
One end surface of the 45-degree dichroic mirror 5 is plated with a 45-degree incident total reflection film with the center wavelength of laser wavelength and a 45-degree incident antireflection film with the center wavelength of pump laser wavelength, and the other end surface is plated with a 45-degree incident antireflection film with the center wavelength of pump laser wavelength for turning a laser light path.
The laser beam 6 uses alkali metal vapor provided by a cross-flow alkali metal vapor pool 8 as a gain medium, uses a pumping laser beam 2 provided by a semiconductor laser pumping source as an excitation light source, and a laser resonant cavity formed by the laser total reflection mirror 3 and the laser output coupling mirror 7, so that alkali metal laser with better beam quality and narrower frequency linewidth is finally generated.
The laser output coupling mirror 7 and the laser total reflection mirror 3 together form an alkali metal laser resonant cavity mirror for performing mode selection of alkali metal laser. The end surface of the cross flow alkali metal vapor pool 8 is coated with a reflecting film with the center wavelength being the laser wavelength, and the other end surface is coated with an antireflection film with the center wavelength being the laser wavelength.
The cross flow type alkali metal vapor tank 8 is a container for accommodating an alkali metal laser gain medium (composed of alkali metal vapor and buffer gas), adopts a metal-glass composite structure, is internally provided with a fan to drive mixed gas in the vapor tank to flow in a cross flow mode, avoids the phenomena of photochemical reaction, alkali metal consumption, laser power reduction, laser stop oscillation, optical window damage and the like caused by local high temperature in the vapor tank during high-power pumping, and is provided with at least two groups of optical windows 4 on the end face thereof for pumping and laser beam transmission and increases single-tube injection power.
(III) beneficial effects
The compact long cavity Cheng Duolu pump alkali metal laser provided by the technical scheme has the following beneficial effects:
(1) In the invention, a mode of arranging a plurality of groups of optical windows in a single alkali metal vapor pool for multipath pumping is adopted, so that the single-tube pumping capacity of the alkali metal laser is improved, and the output power of the alkali metal laser can be greatly improved.
(2) In the invention, the cross-flow alkali metal vapor pool adopts a flowing heat dissipation layout, so that the local temperature distribution of a laser field can be well homogenized, the heat load pressure of an alkali metal laser is reduced, and the laser damage resistance threshold of the alkali metal laser is improved.
(3) In the invention, a single alkali metal vapor pool can be utilized to realize multi-path pumping, so that the alkali metal laser has compact structure and higher energy-to-weight ratio advantage.
(4) In the invention, various gases such as potassium, rubidium, cesium and the like can be injected into the alkali metal vapor pool at the same time, so that high-power alkali metal lasers with at least three different wavelengths are realized.
Drawings
Fig. 1 is a schematic diagram of a compact long cavity Cheng Duolu pump alkali metal laser (suitable for use in higher power level alkali metal laser systems).
Fig. 2 is a schematic diagram of a compact long cavity Cheng Duolu pump alkali metal laser (suitable for use in lower power level alkali metal laser systems).
Detailed Description
To make the objects, contents and advantages of the present invention more apparent, the following detailed description of the present invention will be given with reference to the accompanying drawings and examples.
The technical scheme of the compact long cavity Cheng Duolu pump alkali metal laser is provided for the problems of complex system light path adjustment, huge volume and weight, low energy-to-weight ratio, local high temperature and other thermal phenomena in a vapor tank of an alkali metal vapor laser system during high-power pumping caused by adoption of gain medium separation type layout in the existing solid or fiber laser main oscillation amplification system, and the characteristics of high alkali metal Stokes efficiency, low heat generation capacity and the like. Fig. 1 is a schematic diagram of a compact long cavity Cheng Duolu pumped alkali metal laser suitable for higher power levels in connection with an embodiment of the present invention, and fig. 2 is a schematic diagram of a compact long cavity Cheng Duolu pumped alkali metal laser suitable for lower power levels in connection with an embodiment of the present invention.
The compact long cavity Cheng Duolu pump alkali metal laser of this embodiment comprises: the laser device comprises a semiconductor laser pumping source 1, a pumping laser beam 2, a laser total reflection mirror 3, an optical window 4, a 45-degree dichroic mirror 5, a laser beam 6, a laser output coupling mirror 7 and a cross-flow alkali metal vapor cell 8; two groups of opposite optical windows 4 are formed in the cross-flow alkali metal vapor pool 8, a laser total reflection mirror 3 and a 45-degree dichroic mirror 5 are respectively arranged at the two outer sides of one group of optical windows 4, a semiconductor laser pumping source 1 is arranged at the outer side of the laser total reflection mirror 3, and a semiconductor laser pumping source 1 is arranged at the outer side of the 45-degree dichroic mirror 5; the laser output coupling mirror 7 and the further 45 deg. dichroic mirror 5 are arranged on both outer sides of the other set of optical windows 4, respectively, and a semiconductor laser pump source 1 is arranged on the outer side of the further 45 deg. dichroic mirror 5.
The semiconductor laser pump source 1 is used as a pump source of an alkali metal vapor laser and is used for generating alkali metal laser. In general, the wavelength linewidth of the semiconductor laser is wider, and the linewidth of the semiconductor laser pump source is matched with the linewidth of the D2 line of the alkali metal vapor atom in the vapor cell widened by the buffer gas by additionally adopting a linewidth compressing technology, so that the utilization rate of the pump laser is improved.
The pump laser beam 2 is generated by the semiconductor laser source 1, and the beam spot in the geometric space of the pump laser beam should be subjected to beam shaping treatment so as to improve the pattern matching efficiency of the pump light and the laser and increase the light-light efficiency of a laser system.
The laser total reflection mirror 3 is used as a laser resonator mirror for generating alkali metal laser, one end surface of the laser total reflection mirror, which is close to a pumping laser source, is plated with an antireflection film with the center wavelength being the pumping laser wavelength, and the other end surface is plated with an antireflection film with the center wavelength being the pumping laser wavelength and a total reflection film with the center wavelength being the laser wavelength, and the use mode is shown in figure 1, so that the laser total reflection mirror is suitable for an alkali metal laser system with higher power level. In addition, the use mode shown in fig. 2 can be adopted, and only one end face is required to be plated with a broadband total reflection film with the center wavelength being the wavelength of the pump light and the laser light, so that the laser light source is applicable to an alkali metal laser system with a lower power level.
The optical windows 4 are positioned at two end faces of the cross flow alkali metal vapor pool 8, are used for transmitting pump light and laser, and at least comprise two groups for multipath pumping, so that the single-tube injection power is improved. The sealing of the optical window and the cross-flow alkali metal vapor pool should be specially made, so as to avoid oxidation of alkali metal caused by the entry of oxygen, water vapor and other impurities in the air outside the cavity into the cavity and the leakage of mixed gas in the cavity, and influence the performance of the laser system, and the ultimate vacuum degree at the optical window after sealing should be generally less than 10 < -3 > Pa.
The 45-degree dichroic mirror 5 is used for folding the pump light and the laser light path, one end surface of the dichroic mirror is plated with a 45-degree incident antireflection film with the center wavelength of the pump laser wavelength, and the other end surface is plated with a 45-degree incident total reflection film with the center wavelength of the pump laser wavelength and the laser wavelength.
The laser beam 6 is generated by exciting a gain medium in a transverse flow type alkali metal vapor pool 8 by a semiconductor laser pumping source 1 and performing laser mode selection by a laser resonant cavity formed by a laser total reflection mirror 3 and a laser output coupling mirror 7.
The laser output coupling mirror 7 is used as a laser resonant cavity mirror and is used for generating alkali metal laser, one end surface of the laser output coupling mirror, which is close to the transverse flow type alkali metal vapor pool 8, is plated with a reflecting film with the center wavelength being the laser wavelength and a high reflecting film with the pumping laser wavelength, and the other end surface is plated with an antireflection film with the center wavelength being the laser wavelength.
The cross flow type alkali metal vapor tank 8 adopts a metal-glass composite structure, and a built-in fan drives mixed gas in the vapor tank to flow in a cross flow mode, so that the mixed gas is used for homogenizing the temperature field in the vapor tank, reducing the temperature difference and lowering the highest temperature, and avoiding the thermal phenomena of photochemical reaction, alkali metal consumption, laser power reduction, even stop oscillation, optical window pollution, damage, lower beam quality and the like in the vapor tank when high-power pumping occurs. The vapor tank cavity should avoid using the component that has greasy dirt to volatilize, each sealing member should consider the influence of high temperature corrosion environment to sealing performance, especially should pay attention to the sealing performance of built-in fan, should ensure under the operating condition of high temperature high rotational speed, can not appear gas leakage and greasy dirt etc. impurity volatilize the condition that influences cavity gas tightness and laser system performance.
The mixed gas is composed of alkali metal vapor, typically potassium vapor, rubidium vapor, cesium vapor, and the above mixed gas, and buffer gas, which may be methane, ethane, helium, argon, and the mixed gas of the above gases, or the like.
In this embodiment, the pump laser beam emitted by one module of the semiconductor laser pump source 1 subjected to wide-pressure narrow processing is shaped into a pump laser beam 2, transmitted through the laser total reflection mirror 3 or the 45 ° dichroic mirror 5, reaches and passes through the optical window 4 of the cross-flow alkali metal vapor cell 8, and pumps the alkali metal vapor atoms in the cross-flow alkali metal vapor cell 8 to form population inversion.
The alkali metal vapor atom radiation photons with reversed particle numbers are formed, amplified by a laser resonant cavity formed by the laser total reflection mirror 3 and the laser output coupling mirror 7, and finally form a laser beam 6. According to the output power level of the laser, the single-tube output power of the laser system can be improved by properly increasing the number of groups of optical windows 4 on the cross-flow alkali metal vapor cell 8 and combining with the 45-degree dichroic mirror 5 to increase the multiple-pump laser.
As can be seen from the technical scheme, the invention has the following remarkable characteristics:
1. the compact long cavity Cheng Duolu pump alkali metal laser provided by the invention adopts a mode of arranging a plurality of groups of optical windows on one cross flow alkali metal vapor tank to improve the single-tube pump power of the laser system, avoids adopting a separated gain medium layout, and has the characteristics of simple light path adjustment, compact structure and high energy-to-weight ratio.
2. The transverse flow type alkali metal vapor pool of the compact long cavity Cheng Duolu pump alkali metal laser provided by the invention adopts a metal-glass composite structure, so that the atmosphere type and proportion in the vapor pool can be changed at will, and the optimization cost of the system is low and the time consumption is short.
3. The compact long cavity Cheng Duolu pump alkali metal laser provided by the invention can realize multi-wavelength high-power alkali metal laser output at the same time, mixed alkali metal vapor containing potassium, rubidium, cesium and the like can be injected into the transverse flow alkali metal vapor pool at the same time, and high-power alkali metal laser with at least three wavelengths can be realized.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (10)
1. A compact long cavity Cheng Duolu pumped alkali metal laser comprising: the laser beam source comprises a semiconductor laser pump source, a pump laser beam, a laser total reflection mirror, an optical window, a 45-degree dichroic mirror, a laser output coupling mirror and a cross-flow alkali metal vapor tank; at least two groups of optical windows are formed in the cross flow type alkali metal vapor pool, a 45-degree dichroic mirror and a laser output coupling mirror are respectively arranged on two sides of one group of optical windows, a laser total reflection mirror and a 45-degree dichroic mirror are respectively arranged on two sides of the other group of optical windows, all the 45-degree dichroic mirrors are positioned on the same side of the cross flow type alkali metal vapor pool, and a semiconductor laser pumping source is arranged on the outer side of each 45-degree dichroic mirror.
2. The compact long cavity Cheng Duolu pumped alkali metal laser of claim 1, wherein a semiconductor laser pump source is disposed outside the laser total reflection mirrors corresponding to the other sets of optical window sides, respectively.
3. The compact long cavity Cheng Duolu pump alkali metal laser of claim 2, wherein the semiconductor laser pump source generates a pump laser beam and a beam shaping system comprised of an optical lens transmits the pump laser beam into a cross-flow alkali metal vapor cell to pump alkali metal vapor atoms, form stimulated radiation and generate alkali metal laser light.
4. A compact long cavity Cheng Duolu pumped alkali metal laser as claimed in claim 3, wherein said laser total reflection mirror and output coupling mirror form a laser resonator mirror for generating an alkali metal laser.
5. The compact long cavity Cheng Duolu pumped alkali metal laser of claim 1, wherein a surface of said laser total reflection mirror is coated with a total reflection film having a center wavelength of the laser wavelength for constituting the laser resonator.
6. The compact long cavity Cheng Duolu pump alkali metal laser of claim 2, wherein one side surface of said laser total reflection mirror is coated with an antireflection film having a center wavelength of the pump light wavelength and the other side surface is coated with an antireflection film having a center wavelength of the pump light wavelength and a total reflection film having a center wavelength of the laser light wavelength.
7. The compact long cavity Cheng Duolu pumped alkali metal laser of claim 5 or 6, wherein the central axis of the optical window is parallel to the central axis of the cross-flow alkali metal vapor cell, and the two optical windows with central lines parallel to the central axis of the cross-flow vapor cell are a group of optical window groups, alkali metal vapor between each group of optical windows forms a gain medium of the alkali metal laser system, and multiple groups of optical windows are arranged in the cross-flow alkali metal vapor cell to form multiple gain media in a single vapor cell for multiplexing.
8. The compact long cavity Cheng Duolu pump alkali metal laser of claim 7, wherein one side surface of said 45 ° dichroic mirror 5 is coated with a 45 ° incident total reflection film having a center wavelength of the laser light and a 45 ° incident antireflection film having a center wavelength of the pump laser light, and the other side surface is coated with a 45 ° incident antireflection film having a center wavelength of the pump laser light for turning the laser light path.
9. The compact long cavity Cheng Duolu pumped alkali metal laser of claim 8, wherein the side surface of said laser output coupling mirror adjacent to the cross-flow alkali metal vapor cell is coated with a reflective film centered at the lasing wavelength and the other end surface is coated with an anti-reflection film centered at the lasing wavelength.
10. The compact long cavity Cheng Duolu pumped alkali metal laser of claim 9, wherein said cross-flow alkali metal vapor cell contains an alkali metal laser gain medium and is of a metal-glass composite structure with a fan disposed therein to drive the flow of the mixed gas in the vapor cell in a cross-flow manner.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311683707.2A CN117895310A (en) | 2023-12-10 | 2023-12-10 | Compact long cavity Cheng Duolu pump alkali metal laser |
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