CN117856018A - Monolithic non-planar annular cavity laser based on gradient doped laser ceramics - Google Patents
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- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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Abstract
The invention discloses a monolithic non-planar annular cavity laser based on gradient doped laser ceramics. The invention adopts the gradient doped laser ceramics as the gain medium of the non-planar annular cavity, and is characterized in that the ion doping concentration in the medium is changed in a gradient way, and the thermal distribution of the gain medium is more uniform by adjusting the doping concentration, so that the thermal effect of the gain medium of the laser is reduced, the beam quality of output light is improved, and the single-frequency maximum output power of the laser is improved. The monolithic laser system based on the gradient doped laser ceramics is stable and efficient, has good integrality and can be widely applied to the fields of laser radar, gravitational wave detection and the like.
Description
Technical Field
The invention relates to the technical field of solid lasers, in particular to a monolithic non-planar ring laser based on gradient doped laser ceramics.
Background
The laser consists of three key parts including an optical resonant cavity, a gain medium and a pump light source. The gain medium is responsible for providing the gain required for optical amplification, the main function of the pump light source is to provide the energy required for stimulated radiation particle number inversion, and the optical resonant cavity defines the transverse mode and the longitudinal mode of the optical field. The non-planar annular cavity laser has the functions of the gain medium and the resonant cavity in the mode of medium surface coating, so that the non-planar annular cavity laser has the advantages of compact structure, low noise and stable performance, but simultaneously, the heat inside the gain medium is more easily deposited together due to the compact structure, namely, the heat effect inside the gain medium is generated.
The thermal effect of the gain medium is a major factor in limiting the output power of the solid-state laser. A part of the energy of the pump light entering the gain medium is converted into laser output, and the rest is converted into heat due to quantum defect effect, so that after the gain medium absorbs the heat generated by the pump light, a temperature gradient is generated due to the uneven distribution of the internal temperature of the gain medium, and the generation of the temperature gradient further causes the change of internal stress. The thermal effect not only affects the oscillation mode of the output light and the beam quality, but also causes perforation or even fracture of the working substance, which greatly affects the output efficiency of the laser, so that the temperature gradient in the gain medium needs to be reduced to reduce the thermal effect.
In order to improve the phenomenon of uneven heat distribution inside the monolith, researchers have explored various means to reduce the heat effects inside the monolith, and conventional means mainly include two kinds of means: a low-temperature heat dissipation method and a concave surface compensation method. The former requires physical cooling such as liquid nitrogen or water cooling to remove heat from the interior of the monolith, which undoubtedly reduces the integratability of the monolithic laser. The latter compensates for thermal lens effects caused by thermal effects by grinding a negative lens near the front face of the monolith to render the resonant cavity unstable. The method has high processing difficulty and does not solve the problem of heat accumulation caused by pump light, so how to effectively reduce the heat effect generated inside the single block is one of the key problems to be solved in the field. With the breakthrough progress of research on laser ceramics, ceramics are attracting a lot of attention as gain media of laser, and as ceramics have the advantages of large-scale preparation and flexible ion doping concentration change compared with crystals, the use of laser ceramics as gain media is a means for effectively reducing the thermal effect of lasers.
Disclosure of Invention
The invention aims to provide a monolithic non-planar annular cavity laser based on gradient doped laser ceramics, which can effectively solve the problems of degradation of beam quality, increase of oscillation threshold, reduction of output power and efficiency and the like caused by thermal effect of the laser.
In order to achieve the above object, the present invention provides the following technical solutions: the single block non-planar annular cavity laser of the gradient doped laser ceramic comprises a pumping source and a collimation focusing system, and is characterized in that pumping light emitted by the pumping source enters the collimation focusing system through a single-mode polarization maintaining fiber and then enters the non-planar annular cavity single block, and a cooling heat sink is attached to the bottom surface of the non-planar annular cavity single block;
the non-planar annular cavity monolithic is provided with N-step doping from an incident surface on the right side towards a direction far away from a pumping source, and doping concentrations of 1-step doping concentration are 0,2 and N-step doping concentration are sequentially increased, wherein the doping concentration of the N-step doping concentration is not more than 1.5 at%. The path of the pump light in the non-planar annular cavity monolith is: the pumping light enters from the right side surface of the single block at a certain angle at the point A, then continuously goes deep into the single block after being reflected by the point B, and then goes towards the external path of the single block after being reflected by the point C of the last-stage doped side wall, then is emitted through the point A after being reflected by the point D of the single block waist side surface, and the light rays form symmetrical triangles in the deep path ABC and the outgoing path CDA in the single block. The laser realizes single-phase operation in the single block and single-frequency laser output.
Further, the deep path and the outgoing path of the laser pass through the N-stage doping section.
Further, the collimating and focusing system is composed of a collimating lens at the input end and a focusing lens at the output end.
Further, the doped ion is Er 3+ 、Nd 3+ 、Ho 3+ Or Tm 3+ Rare earth ions, and the substrate adopts isotropic medium YAG, GGG or YSAG.
Furthermore, the incident end face of the single block is plated with a dielectric film with high transmission to pump light and high reflection to oscillation light; meanwhile, the two types of light in the cavity have different loss differences and play a role in selecting and outputting single frequency. The dielectric film is generally a thin layer material such as an oxide, a metal or a rare earth material.
Furthermore, the single-piece is of an octahedral structure with parallel upper and lower planes, an incident end face is perpendicular to the upper and lower planes, a first waist plane which extends leftwards and is arranged between the upper and lower planes is connected to the front side and the rear side of the incident end face, the first waist plane is perpendicular to the upper and lower planes and the incident end face, a second waist plane is connected to the left side of the first waist plane, the second waist plane is connected between the upper and lower planes, the left end of the second waist plane extends inwards in an inclined mode, a third waist plane is connected between the left side walls of the two second waist planes, the upper and lower ends of the third waist plane are connected to the upper and lower planes, the upper side edge of the third waist plane is in an inverted trapezoid shape and inclines towards the direction of the incident end face, the lower surface is a cooling surface, and temperature control is achieved through red copper heat sink contact controlled by a TEC refrigerating system. The monolithic structure is compact, and the monolithic size is equivalent to the nail cover, so that the volume of the packaged laser is reduced.
Further, the doping order is n=4, the 1 st order is an undoped portion, the doping concentration of the 2 nd order monoblock is 0.2 to 0.4at.%, the doping concentration of the 3 rd order monoblock is 0.4 to 0.6at.%, and the doping concentration of the 4 th order monoblock is 1 to 1.2at.%.
Further, the doping order is n=4, the length of the single block is 12mm, the width is 14mm, the height is 4mm, the incident end face is plated with a high-transmission dielectric film for inputting 808nm light, wherein the transmittance in the s-light direction is 80%, and the transmittance in the p-light direction is 97%; meanwhile, a high-reflection dielectric film for 1064nm output light is plated, the reflectivity in the s-ray direction is 97%, and the reflectivity in the p-ray direction is 82%, so that the purity of p-ray in laser output can be ensured; the doping stage gradient is carried out along the width direction of the single block, the length of the 1-order undoped part is 2mm, and the lengths of the 2,3 and 4-step doped parts are all 4mm.
The invention has the beneficial effects that:
1. the design structure of the single non-planar annular cavity is adopted, the gain medium and the resonant cavity are combined together, the insertion loss of other optical elements is avoided, the laser output of a single longitudinal mode can be efficiently obtained, and the space utilization rate of the inside of the laser is improved.
2. Because the laser ceramics with gradient doping are adopted as the gain medium, the intra-cavity thermal effect is reduced without adding extra heat dissipation equipment, the maximum single-frequency output power of a single block is effectively improved, and the integration is higher.
3. Due to the structural design of gradient concentration doping, the heat distribution in the single block presents uniform distribution characteristics in the axial direction, so that the thermal lens effect caused by heat accumulation in the resonant cavity is greatly weakened, and higher laser output power and beam quality can be obtained.
Drawings
In order to more clearly illustrate the embodiments of the present invention, the drawings that are required for the description of the embodiments will be briefly described below, it being apparent that the drawings in the following description are only some embodiments of the present invention and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
FIG. 1 is a schematic diagram of the main structure of a gradient doped laser ceramic monolithic non-planar annular cavity laser system provided by the invention.
Fig. 2 is a schematic structural view (perspective view, top view, left side view, front view, respectively) of a monolithic non-planar annular chamber.
Fig. 3 is a temperature profile of the monolithic interior incident direction (dashed lines represent doping schemes for three examples, solid lines represent equivalent uniform doping schemes) obtained by a finite element analysis method under certain pumping conditions.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without any inventive effort, are intended to be within the scope of the invention.
A monolithic non-planar ring cavity laser of gradient doped laser ceramic, comprising: the laser ceramic single block is characterized by comprising a pumping source, a collimation focusing system and an N-step degree doped laser ceramic single block, and is characterized in that: the pumping source adopts 808nm laser diode for pumping, enters the collimation focusing system for focusing through the single-mode polarization maintaining fiber, then is incident on the incident end face of the non-planar annular cavity, and returns to the incident end face after three times of total reflection in the cavity to form a closed light path.
In order to effectively reduce distortion effect caused by thermal expansion near an incident end face, a 1-stage sub-single block is designed into undoped pure YAG ceramic, concentration diffusion phenomenon among the surfaces of the sub-single blocks and influence of impurity particles in the ceramic are comprehensively carried out in the gradient doping laser ceramic sintering process, the lengths of the sub-single blocks are taken as integers in consideration of processing difficulty in actual production of the laser ceramic, and the doping concentration of each sub-single block (2-4 stages) is respectively 0.2-0.4 at%, 0.4-0.6 at%, and 1.0-1.2 at%.
The following table is a gradient doping concentration table
| Monolithic blockOrder of | L 1 ＝2mm | L 2 ＝4mm | L 3 ＝4mm | L 4 ＝4mm |
| Doping concentration range | 0at.％ | 0.2-0.4at.％ | 0.4-0.6at.％ | 1.0-1.2at.％ |
The incident end face of the N-step doped laser ceramic monolith is plated with a special dielectric film so as to realize high transmission of pumping light and high reflection of oscillating light, and meanwhile, the N-step doped laser ceramic monolith has different reflectivities for horizontal polarized light (p light) and vertical polarized light (s light) of the oscillating light, so that two lights in a cavity have different loss differences, and the effect of selecting and outputting single frequency is achieved.
A specific example 1 of the invention is given below,
fig. 1 is a schematic diagram of a laser system with a non-planar ring cavity of a gradient doped laser ceramic monolith, and as can be seen from the figure, the laser system of the present invention mainly comprises: the device comprises a pumping source 1, a collimating lens 2 of a collimating focusing system, focusing lenses 3 and 4, a stepped doped laser ceramic monolith 5 and a cooling heat sink 4, and is characterized in that:
the N-step doped laser ceramic monolith is shown in fig. 2, in the method, the doping order is n=4, the material of the monolith is a YAG laser ceramic material doped with neodymium (Nd), in the figure, α is an incident angle or an exit angle of pumping light from the input-output coupling surface a, and the pumping light is transmitted along a counterclockwise ABCDA path or a clockwise ADCBA inside the monolithic crystal. The path ABCDA consists of two triangles ABD and BCD, which have a common edge BD and have a length L 3 Triangle ABD has height L 1 Triangle shapeBCD has a height L 2 . Beta represents the angle between the planes, i.e. the angle between the planes ABD and BCD.
The specific dimensions of the monolith are: length l=12 mm, width w=14 mm, and height h=4 mm. The monolithic non-planar annular chamber 5 has a total of 8 polished faces, with 4 optical faces as working faces and the other 4 planar faces as auxiliary faces. The lower surface is used as a heat transfer surface for single-block temperature control, and the lower surface is connected with the red copper heat sink 4. The input/output coupling surface was coated with a high-transmittance dielectric film for 808nm input light, wherein the transmittance in the s-ray direction was 80% and the transmittance in the p-ray direction was 97%. Meanwhile, a high-reflection dielectric film for 1064nm output light is plated, the reflectivity in the s-ray direction is 97%, and the reflectivity in the p-ray direction is 82%, so that the purity of p-ray in laser output can be ensured.
After the pump light with the wavelength of 808nm is emitted by the laser diode 1, the pump light enters the inside of the single block at an angle of alpha=45 degrees with the incidence surface of the single block non-planar annular cavity after passing through a collimation focusing system consisting of a collimation lens 2 with the focal length of 20mm and a focusing lens 3 with the focal length of 50mm, and the gain medium is excited by the pump light to generate stimulated radiation to generate 1064nm output light.
The length of the 1 st order undoped portion is L 1 The length of the =2mm, 2,3,4 step degree doped part is L i =4mm (i=2, 3, 4), the doping concentration of the 2 nd order sub-block is 0.2at.%, the doping concentration of the 3 rd order sub-block is 0.4at.%, and the doping concentration of the 4 th order sub-block is 1at.%. The temperature distribution in the monolith along the direction of incidence under certain pumping conditions is shown in figure 3.
A method for generating 1064nm band laser output from a monolithic non-planar ring cavity laser system based on gradient doped ceramic is briefly described below in connection with embodiments of the present invention.
In this example, the output wavelength of the laser diode is 808nm, the maximum input current is 5A, the maximum output power is 5W, the half angle divergence angle is about 70mrad, and the output beam waist radius of the laser diode is about 100 μm. The collimating and focusing systems 2 and 3 consist of a collimating lens with a focal length of 20mm and a focusing lens with a focal length of 50 mm.
The embodiment provides a monolithic non-planar annular cavity laser based on gradient doped laser ceramics, which can effectively improve the maximum output power of a single-frequency laser and the beam quality of output light.
Example 2, which changed the concentration of gradient doping only compared to example 1, was the same as example 1.
The length of the 1 st order undoped portion is L 1 The length of the =2mm, 2,3,4 step degree doped part is L i =4mm (i=2, 3, 4), the doping concentration of the 2 nd order sub-block is 0.3at.%, the doping concentration of the 3 rd order sub-block is 0.5at.%, and the doping concentration of the 4 th order sub-block is 1.1at.%. The temperature distribution in the monolith along the direction of incidence under certain pumping conditions is shown in figure 3.
Example 3, which is the same as example 1 except that the gradient doping concentration was changed as compared with example 1.
The length of the 1 st order undoped portion is L 1 The length of the =2mm, 2,3,4 step degree doped part is L i =4mm (i=2, 3, 4), the doping concentration of the 2 nd order sub-block is 0.4at.%, the doping concentration of the 3 rd order sub-block is 0.6at.%, and the doping concentration of the 4 th order sub-block is 1.2at.%. The temperature distribution in the monolith along the direction of incidence under certain pumping conditions is shown in figure 3.
The doping concentration schemes of the above three embodiments are all within the doping concentration ranges set forth in the above summary, and it can be seen from fig. 3 that the temperatures near the incident end face are effectively reduced and the temperature distribution in the central portion of the monolith is relatively uniform, as compared with the equivalent uniform doping scheme, in the three schemes within the prescribed doping ranges, according to the intended effects of the present invention.
It should be noted that the above examples merely represent preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. Any modifications, equivalent substitutions, or improvements to the present invention are intended to be within the spirit and principles of the present invention.
Claims (8)
1. The single block non-planar annular cavity laser of the gradient doped laser ceramic comprises a pumping source and a collimation focusing system, and is characterized in that pumping light emitted by the pumping source enters the collimation focusing system through a single-mode polarization maintaining fiber and then enters the non-planar annular cavity single block, and a cooling heat sink is attached to the bottom surface of the non-planar annular cavity single block;
the non-planar annular cavity monoblock is provided with N-step doping from the incident surface on the right side to the direction away from the pumping source, N 1 Doping concentration of 0, N 2 The doping concentration to N is sequentially increased, and the path of the pump light in the non-planar annular cavity monoblock is as follows: the pumping light enters from the right side surface of the single block at a certain angle at the point A, then continuously goes deep into the single block after being reflected by the point B, and then goes towards the external path of the single block after being reflected by the point C of the last-stage doped side wall, then is emitted through the point A after being reflected by the point D of the single block waist side surface, and the light rays form symmetrical triangles in the deep path ABC and the outgoing path CDA in the single block.
2. A monolithic non-planar ring cavity laser based on gradient doped laser ceramics as claimed in claim 1, wherein the in-depth and out-going paths of the laser light both pass through the N-order doping stage.
3. The monolithic non-planar annular cavity laser based on gradient doped laser ceramic as claimed in claim 1, wherein said collimating focusing system is comprised of an input collimating lens and an output focusing lens.
4. The monolithic non-planar annular cavity laser based on gradient doped laser ceramic as claimed in claim 1, wherein the doped ions are Er 3+ 、Nd 3+ 、Ho 3+ Or Tm 3+ Rare earth ions, and the substrate adopts isotropic medium YAG, GGG or YSAG.
5. The monolithic non-planar annular cavity laser based on gradient doped laser ceramics according to claim 1, wherein the incident end face of the monolithic is coated with a dielectric film that is highly transparent to pump light and highly reflective to oscillating light; meanwhile, the two types of light in the cavity have different loss differences and play a role in selecting and outputting single frequency.
6. The single-block non-planar annular cavity laser based on gradient doped laser ceramics according to claim 1, wherein the single block is of an octahedral structure with parallel upper and lower planes, an incident end face is perpendicular to the upper and lower planes, front and rear sides of the incident end face are respectively connected with first waist planes which extend leftwards and are arranged between the upper and lower planes, the first waist planes are perpendicular to the upper and lower planes and the incident end face, a second waist plane is connected to the left side of the first waist plane, the second waist plane is connected between the upper and lower planes, the left end of the second waist plane extends inwards in an inclined manner, a third waist plane is connected between the left side walls of the two second waist planes, the upper and lower ends of the third waist plane are connected to the upper and lower planes, the third waist plane is in an inverted trapezoid shape, the upper side of the third waist plane is inclined towards the incident end face direction, and the lower surface is a cooling surface, and temperature control is realized by contacting with a red copper heat sink controlled by a refrigerating system.
7. The monolithic non-planar ring cavity laser of claim 1, wherein the doping order is N = 4, the 1 st order is undoped, the doping concentration of the 2 nd order sub-monolithic is 0.2-0.4at.%, the doping concentration of the 3 rd order sub-monolithic is 0.4-0.6at.%, and the doping concentration of the 4 th order sub-monolithic is 1-1.2at.%.
8. The gradient doped laser ceramic-based monolithic non-planar ring cavity laser of claim 7, wherein the doping order is N = 4, the monolithic is 12mm long, 14mm wide and 4mm high, the incident end face is coated with a high transmission dielectric film for the input 808nm light, wherein the transmission in s-direction is 80% and the transmission in p-direction is 97%; meanwhile, a high-reflection dielectric film for 1064nm output light is plated, the reflectivity in the s-ray direction is 97%, and the reflectivity in the p-ray direction is 82%, so that the purity of p-ray in laser output can be ensured; the doping stage gradient is carried out along the width direction of the single block, the length of the 1-order undoped part is 2mm, and the lengths of the 2,3 and 4-step doped parts are all 4mm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117117612A (en) * | 2023-08-23 | 2023-11-24 | 华中科技大学 | Non-planar annular cavity laser for improving optical isolation and optical isolation improving method |
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| CN1897370A (en) * | 2006-06-23 | 2007-01-17 | 北京理工大学 | 2 mu m bonded monoblock and non-planar longitudinal-mode laser |
| CN103296570A (en) * | 2012-03-02 | 2013-09-11 | 中国科学院理化技术研究所 | Single longitudinal mode frequency conversion all-solid-state laser based on non-planar annular cavity structure |
| CN105305207A (en) * | 2014-11-25 | 2016-02-03 | 北京国科世纪激光技术有限公司 | End-pumped single-pass traveling wave laser amplifier |
| CN106329301A (en) * | 2016-11-09 | 2017-01-11 | 上海卫星工程研究所 | Preparing method of solar-pumped laser-operating crystal with nanoscale-step doped structure |
| CN113572001A (en) * | 2021-05-31 | 2021-10-29 | 中国科学院合肥物质科学研究院 | Single-ended pumping Q-switched laser based on doping concentration gradient crystal |
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| CN1897370A (en) * | 2006-06-23 | 2007-01-17 | 北京理工大学 | 2 mu m bonded monoblock and non-planar longitudinal-mode laser |
| CN103296570A (en) * | 2012-03-02 | 2013-09-11 | 中国科学院理化技术研究所 | Single longitudinal mode frequency conversion all-solid-state laser based on non-planar annular cavity structure |
| CN105305207A (en) * | 2014-11-25 | 2016-02-03 | 北京国科世纪激光技术有限公司 | End-pumped single-pass traveling wave laser amplifier |
| CN106329301A (en) * | 2016-11-09 | 2017-01-11 | 上海卫星工程研究所 | Preparing method of solar-pumped laser-operating crystal with nanoscale-step doped structure |
| CN113572001A (en) * | 2021-05-31 | 2021-10-29 | 中国科学院合肥物质科学研究院 | Single-ended pumping Q-switched laser based on doping concentration gradient crystal |
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| CN117117612A (en) * | 2023-08-23 | 2023-11-24 | 华中科技大学 | Non-planar annular cavity laser for improving optical isolation and optical isolation improving method |
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