CN117894882B - Optical annealing device and method for heterojunction of antimony selenide solar cell - Google Patents
Optical annealing device and method for heterojunction of antimony selenide solar cell Download PDFInfo
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- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 238000000137 annealing Methods 0.000 title claims abstract description 41
- 230000003287 optical effect Effects 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000605 extraction Methods 0.000 claims abstract description 5
- 238000012544 monitoring process Methods 0.000 claims abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 17
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 239000010409 thin film Substances 0.000 abstract description 5
- 239000012300 argon atmosphere Substances 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 22
- 239000011787 zinc oxide Substances 0.000 description 11
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 10
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000212941 Glehnia Species 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001912 gas jet deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- GNZJTRGEKSBAAS-UHFFFAOYSA-N selanylideneantimony;selenium Chemical compound [Se].[Sb]=[Se].[Sb]=[Se] GNZJTRGEKSBAAS-UHFFFAOYSA-N 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The invention provides an optical annealing device and method for an antimony selenide solar cell heterojunction. The device comprises a vacuum cavity, wherein a sample table is arranged in the vacuum cavity, and the sample table is provided with a thermometer for monitoring temperature; the two sides of the vacuum cavity are provided with a vacuum extraction opening and an air inlet pipeline, and the air inlet pipeline is provided with an inflation valve; a light source component is arranged above the vacuum cavity. The optical annealing device is applied to the Sb 2Se3/CdS heterojunction, performs optical annealing treatment under argon atmosphere through a light source assembly above a vacuum cavity, and then prepares a window layer and a top electrode. Through heterojunction light annealing treatment, interface defect density and bulk defect density of a heterojunction interface are reduced, transmission and collection of photo-generated carriers are promoted, external quantum efficiency of the solar cell in a long wave band (600 nm-1100 nm) is greatly improved, short-circuit current is improved, and further photoelectric conversion efficiency of the antimony selenide thin-film solar cell is improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to an optical annealing device and method for an antimony selenide solar cell heterojunction.
Background
At present, widely studied photovoltaic devices include crystalline silicon solar cells, thin film solar cells, organic solar cells, quantum dot solar cells and the like, wherein the thin film solar cells become research hot spots due to the advantages of low preparation cost, simple process, easy flexibility, portability, suitability for building integration and the like. Antimony selenide (Sb 2Se3) is a natural abundant reserve as an inorganic semiconductor material with good stability and high resistance to oxygen and ultraviolet rays. The Sb 2Se3 material is a quasi-direct band gap material, has a proper band gap (1.1-1.3 eV), has an absorption coefficient of more than 10 5cm-1, and is a very ideal photovoltaic material. According to the limit theory of Shockley-Queisser, the photoelectric conversion efficiency of the single-junction Sb 2Se3 solar cell is more than 30%, and the method has great development potential.
Over the last decade, the efficiency of antimony selenide solar cells has gradually increased. The highest efficiency of the currently reported antimony selenide solar cell is 10.57%, which proves that the antimony selenide solar cell has good application prospect. However, compared with crystalline silicon solar cells, the conversion efficiency of the currently prepared antimony selenide solar cells is still low, and some theoretical and experimental results indicate that the problems of undesirable Conduction Band Offset (CBO) at a heterojunction, excessive diffusion of elements and the like of high-density interface defects (about 10 11cm-3) between Sb 2Se3 and CdS severely restrict the improvement of photoelectric conversion efficiency. At present, the existing equipment cannot meet the requirements of preparing a heterojunction interface with low interface defects and high quality, and the photoelectric conversion efficiency of the antimony selenide solar cell is more difficult to further improve.
Disclosure of Invention
The invention aims to provide an optical annealing device and method for heterojunction of an antimony selenide solar cell, which reduce interface defect density and bulk defect density of the heterojunction through heterojunction optical annealing treatment, promote transmission and collection of photo-generated carriers, greatly improve external quantum efficiency of the solar cell in a long wave band (600 nm-1100 nm), and promote short circuit current, thereby improving photoelectric conversion efficiency of the antimony selenide thin film solar cell.
The invention is realized in the following way:
an optical annealing device for heterojunction of antimony selenide solar cell, which structurally comprises: the vacuum cavity is internally provided with a sample table and a thermometer for monitoring the temperature of the sample table; the two sides of the vacuum cavity are provided with a vacuum extraction opening and an air inlet pipeline, and the air inlet pipeline is provided with an inflation valve; a light source component is arranged above the vacuum cavity.
The optical annealing device provided by the invention is used for carrying out optical annealing on the heterojunction of the antimony selenide solar cell, the sample in the vacuum cavity is irradiated by the light source component which emits light through the light source component above the vacuum cavity, and the sample is subjected to optical annealing treatment under the argon atmosphere. And preparing the window layer and the top electrode after the optical annealing treatment.
Preferably, the heterojunction of the antimony selenide solar cell is specifically an Sb 2Se3/CdS heterojunction.
Preferably, the vacuum chamber is composed of a quartz tube equipped with a mechanical pump for evacuating.
Preferably, the gas introduced into the air inlet pipeline is high-purity argon (99.999%).
Preferably, the light source component is a light heating lamp tube and is provided with a control module, and the control module controls the irradiation intensity and time of the light source component.
Preferably, the light source assembly is longitudinally aligned with the center of the sample stage, and the light source assembly is spaced from the sample stage by 20cm.
The invention also provides an optical annealing method for the heterojunction of the antimony selenide solar cell, which comprises the following steps:
(1) Setting the light annealing device;
(2) Fixing the sample on a sample stage, and longitudinally aligning the light source component with the center of the sample stage;
(3) Vacuumizing, when the air pressure in the vacuum cavity is 1X 10 -1 Pa, closing the mechanical pump, and introducing high-purity argon;
(4) Turning on a light source assembly, and controlling the irradiation intensity and the irradiation time;
(5) And cooling after the light source assembly irradiates for a specified time, and taking out the sample.
The gas pressure of the high-purity argon introduced in the step (3) is not lower than 50kPa and is generally set to be 50-200 kPa.
In the step (4), the irradiation time of the light source component is 20-40 min, and the irradiation power is 100-150W.
And (5) after the light source component reaches the irradiation time, taking out the sample after the temperature of the sample stage is reduced to 50 ℃.
In the heterojunction treatment process, the antimony selenide solar cell with low interface defect, low bulk defect and high carrier transmission efficiency is obtained by regulating and controlling the irradiation intensity and time irradiation time of the light source assembly, and the device and the process are simple in operation, controllable in condition, efficient and stable in treatment process and suitable for further popularization and application.
The optical annealing device and the method for the heterojunction of the antimony selenide solar cell, which are provided by the invention, are one of effective means for improving the current of the solar cell and preparing the high-efficiency antimony selenide solar cell, and compared with the prior art, have the advantages that:
(1) The process is simple and efficient. The temperature of the sample is low (about 90-120 ℃) in the treatment process, the area of the treated sample is large (the area of the sample can be as large as the area of a sample table in the light allowable range), and the promotion of the industrialization of the antimony selenide solar cell is facilitated.
(2) Stable and strong controllability. Under the high-purity argon atmosphere, the control module is not easily influenced by other external factors, and the control module controls the light source to irradiate in the whole process, so that the high-purity argon atmosphere has low irradiation intensity and low irradiation time.
(3) The problems of large interface defects at the heterojunction interface, excessive diffusion of elements and the like are effectively solved, and the preparation of the high-efficiency antimony selenide solar cell is realized.
Drawings
Fig. 1 is a schematic structural diagram of an optical annealing device for heterojunction of an antimony selenide solar cell according to the present invention.
Fig. 2 is a schematic structural diagram of an antimony selenide solar cell prepared according to the present invention.
Fig. 3 is a graph showing External Quantum Efficiency (EQE) and capacitance voltage and driver stage capacitance analysis (CV/DLCP) test patterns of the antimony selenide solar cells prepared in example 2 and comparative example 1 of the present invention.
Fig. 4 is a graph of the photovoltaic performance of the device of the present invention at various light irradiation times.
Fig. 5 is a graph of the photovoltaic performance of the device of the present invention at different light illumination powers.
Detailed Description
For a further understanding of the present invention, preferred embodiments of the invention are described below in conjunction with the examples, but it is to be understood that these descriptions are merely intended to illustrate further the features and advantages of the invention and are not limiting of the invention.
Example 1, an optical annealing apparatus for heterojunction of antimony selenide solar cell.
As shown in fig. 1, the structure of the optical annealing device provided by the invention comprises a vacuum cavity 1, wherein the vacuum cavity 1 is specifically a quartz tube; a sample stage 4 is arranged in the vacuum cavity 1 (the area of the sample stage 4 is 10cm multiplied by 10cm in the embodiment), and the sample stage 4 is used for placing a sample; a thermometer 6 for monitoring the temperature of the sample stage 4 is arranged at the sample stage, and the thermometer 6 can be a thermocouple thermometer; the two sides of the vacuum cavity 1 are provided with a vacuum extraction opening 2 and an air inlet pipeline 3, and high-purity argon is required to be introduced into the vacuum cavity 1 during optical annealing. A light source assembly 5 is arranged above the vacuum cavity 1, the light source assembly 5 is a light heating lamp tube, the light source assembly 5 is provided with a control module, and the irradiation intensity and the irradiation time of the light source assembly are controlled by the control module. The light source component 5 is opposite to the sample stage 4 in the vacuum cavity 1, the sample stage 4 in the vacuum cavity 1 is irradiated by the light emitted by the light source component 5, and the sample stage 4 and the sample on the sample stage are heated in a light mode, so that the light annealing of the sample is realized.
Example 2 preparation of antimony selenide solar cell.
As shown in fig. 2, the structure of the antimony selenide solar cell provided by the invention is as follows from bottom to top: a substrate, a back electrode, an antimony selenide absorber layer (corresponding to Sb 2Se3 in fig. 2), a buffer layer, a window layer, and a top electrode. The heterojunction of the antimony selenide solar cell is in a structure formed by an antimony selenide absorption layer and a buffer layer, and is treated by adopting a light annealing method. Referring to fig. 2, the substrate is preferably soda lime Glass (Glass), the back electrode is preferably molybdenum back electrode (Mo), the buffer layer is preferably cadmium sulfide (CdS), the window layer is preferably intrinsic zinc oxide and aluminum doped zinc oxide (ZnO/AZO), and the top electrode is preferably silver electrode (Ag).
The preparation method of the antimony selenide solar cell comprises the following specific steps:
(1) Cleaning a substrate
The method comprises the steps of using soda lime glass as a substrate, firstly using a semiconductor cleaning agent to carry out ultrasonic oscillation cleaning, then using deionized water to wash the surface of the soda lime glass, and then using a nitrogen gun to blow-dry the surface of the substrate.
(2) Preparation of molybdenum Back electrode
The magnetron sputtering technology is adopted to deposit the Mo back electrode, the target material is high-purity molybdenum (99.999%), the 1200W direct current power supply is adopted in the molybdenum target material sputtering technology, the power density is 4.0W/cm 2, the sputtering working gas is high-purity argon (99.999%), the sputtering air pressure is 0.3 Pa, the thickness of the prepared Mo film is 800nm, and the resistivity is 1 multiplied by 10 -5 ohm cm.
(3) Preparation of antimony selenide absorber layer
The antimony selenide absorbing layer was prepared by jet vapor deposition technique, the substrate temperature was set to 370 ℃, the evaporation source temperature was set to 470 ℃, the argon flow was set to 10sccm, and the thickness of the prepared antimony selenide absorbing layer was 1.5 μm.
(4) Preparation of cadmium sulfide buffer layer
The cadmium sulfide buffer layer is prepared by adopting a chemical water bath method, cadmium sulfate is used as a cadmium source, thiourea is used as a sulfur source, ammonia water is added to regulate the reaction environment, the water bath reaction temperature is set to 70 ℃, the reaction time is 12 minutes, and the thickness of the prepared cadmium sulfide buffer layer is 60 nm.
(5) Optical annealing treatment of antimony selenide heterojunction
The Sb 2Se3/CdS heterojunction is treated by adopting the light annealing device, the light annealing working gas is high-purity argon (99.999%) with the pressure of 50kPa, the light source component is longitudinally aligned with the center point of the sample stage, the distance between the light source component and the sample stage is 20cm, the irradiation power of the light source component (emitting yellow light) is 150W, and the irradiation time is 30 minutes. Under the irradiation of 150W, the irradiation is carried out for 30min, and the temperature of the sample stage is about 100 ℃. After irradiation for 30 minutes, the light source assembly is turned off, and the sample is taken out after the temperature of the sample stage is reduced to 50 ℃.
(6) Preparation of Zinc oxide and aluminum doped Zinc oxide Window layer
The intrinsic zinc oxide and the aluminum-doped zinc oxide are deposited by adopting a radio frequency magnetron sputtering method, a high-purity zinc oxide target and an aluminum-doped zinc oxide target are used as sputtering targets, the sputtering power density is 0.8W/cm 2、1.6 W/cm2, the sputtering working gas is high-purity argon, the sputtering air pressure is 0.5 Pa and 0.2 Pa, the substrate temperature is normal temperature, and the thicknesses of the intrinsic zinc oxide and the aluminum-doped zinc oxide are 70 nm and 300 nm respectively.
(7) Preparation of silver top electrode
And depositing a silver top electrode layer by adopting a thermal evaporation technology, wherein high-purity silver particles are used as evaporation sources, the evaporation rate is 0.5nm/s, and the thickness of the prepared Ag electrode is 150 nm.
Comparative example 1
In this comparative example, the heterojunction of the antimony selenide solar cell was not treated by the light annealing device, and other process parameters were the same as in example 2.
External quantum efficiency test and capacitance-voltage test were performed on the heterojunction interfaces prepared in this comparative example and example 2, and the results are shown in fig. 3. In fig. 3, (a) is External Quantum Efficiency (EQE) test data of example 2 and comparative example 1, and (b) is Capacitance Voltage (CV) and driver stage capacitance analysis (DLCP) test chart of example 2 and comparative example 1. As can be seen from fig. 3, the sample after the optical annealing treatment in example 2 has reduced interface defect density and bulk defect density of the heterojunction, promoted transmission and collection of photogenerated carriers, greatly improved external quantum efficiency of the solar cell in a long wavelength band (600 nm-1100 nm), improved short-circuit current, and further improved photoelectric conversion efficiency of the antimony selenide thin-film solar cell, compared with the sample not treated by the optical annealing method in comparative example 1.
The following table 1 shows specific CV/DLCP test values of the antimony selenide solar cells prepared in example 2 and comparative example 1.
TABLE 1 CV/DLCP specific test values of the antimony selenide solar cells prepared in example 2 and comparative example 1
The difference between the free carrier defect density N CV and the bulk defect density N DLCP can be used to obtain that the interface defect density N i,Ni between interfaces corresponds to the interface defect, and the smaller the value is, the better. Therefore, after the optical annealing, the heterojunction interface defects are greatly reduced.
On the basis of example 2, the irradiation power of the light source module in step (5) was fixed at 150W, the irradiation time was changed to 0min, 3min and 3h, respectively, and the resulting samples were subjected to the photoelectric property test together with the samples in example 2, and the results are shown in fig. 4. As can be seen from fig. 4, as the irradiation time increases, the device performance tends to rise and then fall, and the optimal irradiation time is 30min. When the light irradiation time is 3min, the composite center between the Sb 2Se3/CdS films cannot be effectively passivated in the shorter treatment time; when the light irradiation time is 3h, the excessive diffusion of elements at the heterojunction interface of Sb 2Se3/CdS is probably caused by the overlong light annealing time, and the formation of a new defect recombination center causes the great reduction of the photoelectric conversion efficiency of the light annealing device.
On the basis of example 2, the light irradiation time in step (5) was fixed for 30min, the light irradiation power was changed to 0W, 100W and 200W, respectively, and the resulting samples were subjected to the photoelectric property test together with the samples in example 2, and the results are shown in fig. 5. As shown in fig. 5, the device performance trend is that the light irradiation power is increased and then decreased, and when the light irradiation power is 200W, the sample surface has a higher temperature due to the excessively high light annealing irradiation power, so that the Se element on the Sb 2Se3 film surface is precipitated, and the photoelectric conversion efficiency of the light annealing device is greatly reduced.
In summary, the appropriate light annealing treatment can greatly improve the open-circuit voltage and the short-circuit current density of the solar cell, thereby improving the photoelectric conversion efficiency of the solar cell.
Claims (3)
1. An optical annealing method for heterojunction of an antimony selenide solar cell is characterized by comprising the following steps:
(1) Setting an optical annealing device; the optical annealing device comprises a vacuum cavity, wherein a sample table and a thermometer for monitoring the temperature of the sample table are arranged in the vacuum cavity, the sample table is used for bearing a sample, and the sample is an antimony selenide solar cell heterojunction; the two sides of the vacuum cavity are provided with a vacuum extraction opening and an air inlet pipeline, and argon can be introduced into the vacuum cavity through the vacuum extraction opening and the air inlet pipeline; a light source assembly is arranged above the vacuum cavity, the light source assembly is opposite to the sample table in the vacuum cavity, and the light source assembly is used for irradiating a sample to carry out optical annealing on the heterojunction of the antimony selenide solar cell in an argon environment; the heterojunction of the antimony selenide solar cell is specifically an Sb 2Se3/CdS heterojunction;
(2) Fixing the sample on a sample stage;
(3) Vacuumizing, stopping vacuumizing when the air pressure in the vacuum cavity is 1X 10 -1 Pa, and then introducing argon;
(4) Turning on a light source assembly, and controlling the irradiation intensity and the irradiation time;
(5) And cooling after the light source assembly irradiates for a set time, and taking out the sample.
2. The method for optical annealing of heterojunction for antimony selenide solar cells according to claim 1, wherein the gas pressure in the vacuum chamber after introducing argon in step (3) is 50-200kPa.
3. The method for optical annealing of heterojunction of antimony selenide solar cell according to claim 1, wherein in the step (4), the irradiation time of the light source assembly is controlled to be 20-40 min, and the irradiation power is controlled to be 100-150 w.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06107433A (en) * | 1992-09-28 | 1994-04-19 | Hoya Corp | Production of particulate dispersed glass |
| JP2000031082A (en) * | 1998-07-10 | 2000-01-28 | Sanyo Electric Co Ltd | Laser annealer |
| CN101719464A (en) * | 2009-11-16 | 2010-06-02 | 江苏华创光电科技有限公司 | Method for preparing ultra-shallow junction on surface of semiconductor chip through laser |
| CN107546289A (en) * | 2017-08-01 | 2018-01-05 | 华中科技大学 | A kind of antimony selenide thin-film solar cells and preparation method thereof |
| CN110649888A (en) * | 2019-10-21 | 2020-01-03 | 华东师范大学 | Perovskite photovoltaic cell degradation testing arrangement |
| CN113078239A (en) * | 2021-03-29 | 2021-07-06 | 深圳大学 | Antimony selenide thin film solar cell and preparation method thereof |
| CN115663041A (en) * | 2022-10-31 | 2023-01-31 | 河北大学 | Gradient band gap selenium antimony sulfide solar cell and preparation method thereof |
| WO2023040660A1 (en) * | 2021-09-20 | 2023-03-23 | 上海大学 | Reducing agent-free vacuum iron production method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278532A (en) * | 2005-03-28 | 2006-10-12 | Toshiba Corp | Heat treatment method and method of manufacturing semiconductor device |
| US9741576B2 (en) * | 2015-08-26 | 2017-08-22 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment method and heat treatment apparatus |
-
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Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06107433A (en) * | 1992-09-28 | 1994-04-19 | Hoya Corp | Production of particulate dispersed glass |
| JP2000031082A (en) * | 1998-07-10 | 2000-01-28 | Sanyo Electric Co Ltd | Laser annealer |
| CN101719464A (en) * | 2009-11-16 | 2010-06-02 | 江苏华创光电科技有限公司 | Method for preparing ultra-shallow junction on surface of semiconductor chip through laser |
| CN107546289A (en) * | 2017-08-01 | 2018-01-05 | 华中科技大学 | A kind of antimony selenide thin-film solar cells and preparation method thereof |
| CN110649888A (en) * | 2019-10-21 | 2020-01-03 | 华东师范大学 | Perovskite photovoltaic cell degradation testing arrangement |
| CN113078239A (en) * | 2021-03-29 | 2021-07-06 | 深圳大学 | Antimony selenide thin film solar cell and preparation method thereof |
| WO2023040660A1 (en) * | 2021-09-20 | 2023-03-23 | 上海大学 | Reducing agent-free vacuum iron production method |
| CN115663041A (en) * | 2022-10-31 | 2023-01-31 | 河北大学 | Gradient band gap selenium antimony sulfide solar cell and preparation method thereof |
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