CN117894690A - Preparation method of semiconductor wafer with heat dissipation diamond substrate - Google Patents
Preparation method of semiconductor wafer with heat dissipation diamond substrate Download PDFInfo
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- CN117894690A CN117894690A CN202410248794.7A CN202410248794A CN117894690A CN 117894690 A CN117894690 A CN 117894690A CN 202410248794 A CN202410248794 A CN 202410248794A CN 117894690 A CN117894690 A CN 117894690A
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- heat dissipation
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 97
- 239000010432 diamond Substances 0.000 title claims abstract description 97
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000005498 polishing Methods 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 150000002500 ions Chemical class 0.000 claims abstract description 6
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 238000010894 electron beam technology Methods 0.000 claims abstract description 5
- 238000005516 engineering process Methods 0.000 claims abstract description 5
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 58
- 229910052710 silicon Inorganic materials 0.000 claims description 58
- 239000010703 silicon Substances 0.000 claims description 58
- 238000004519 manufacturing process Methods 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000005019 vapor deposition process Methods 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 82
- 239000010408 film Substances 0.000 description 34
- 238000010586 diagram Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- -1 hydrogen ions Chemical class 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to the technical field of semiconductor wafers, and particularly relates to a preparation method of a semiconductor wafer with a heat dissipation diamond substrate, which comprises the steps of polishing a semiconductor wafer, and injecting ions into the end face of the semiconductor wafer by using Smart-Cut technology to form a microcavity so as to form a semiconductor film; directly growing diamond on the back surface of the semiconductor film by a chemical vapor deposition method, taking the diamond as a wafer substrate, and stripping the semiconductor film with the diamond substrate by high-temperature heating; or bonding diamond on the back surface of the semiconductor film by bonding the polished surfaces of the semiconductor wafer and the diamond wafer to form a wafer substrate; annealing treatment; polishing the peeling surface of the semiconductor film with the diamond substrate; preparing a semiconductor wafer with a diamond substrate and a bottom heat dissipation structure; etching a heat dissipation area through photoetching or electron beam or ion beam to prepare a semiconductor wafer with a heat dissipation structure and a diamond substrate; the invention has the advantages of simple process and good heat dissipation effect of the prepared product.
Description
Technical Field
The invention belongs to the technical field of semiconductor wafers, and particularly relates to a preparation method of a semiconductor wafer with a heat dissipation diamond substrate.
Background
The semiconductor material refers to a material having conductivity between that of a conductor and an insulator at normal temperature. The semiconductor chip made of semiconductor material has wide application in the fields of integrated circuit, consumer electronics, communication system, photovoltaic power generation, illumination, etc. For example, electronic products such as mobile phones, televisions, computers, etc. which are common in our daily lives are not separated from semiconductor materials. Semiconductor wafers refer to circular thin sheets of semiconductor material that are commonly used to fabricate semiconductor chips such as integrated circuits. The semiconductor wafer substrate is a part of a semiconductor wafer and is a support plate of the semiconductor wafer.
Semiconductor chips generate a lot of heat during operation, which can cause the temperature of the device to rise, and when the temperature is too high, the operating characteristics of the device can be affected, or even disabled. Therefore, heat dissipation issues must be considered in circuit design. Although semiconductor chips are small in size, they are powerful due to the operation of billions of micro-transistors within the chip. Each micro-transistor can be regarded as a micro-switch that performs a logic operation by controlling the flow of current. Each time these switches are turned on or off, a portion of the electrical energy is converted to thermal energy. Since a large number of transistors are present in the chip, this heat can rapidly accumulate, producing a large amount of heat. If this heat is not dissipated effectively, the chip will overheat, resulting in reduced performance and even damage to the chip. Therefore, efficient chip heat dissipation is very important. As the performance of the chip becomes more and more powerful, the heat dissipation requirement of the chip is also higher and higher. In particular to a GPU chip for artificial intelligent mass operation, a high-current and high-power electric automobile power semiconductor chip and a high-power semiconductor laser chip, which have higher and higher heat dissipation requirements. In addition to being able to withstand various processes such as heating, cooling, etching, and machining during the manufacturing process of semiconductor devices, semiconductor wafer substrates are particularly required to have high heat conductivity, thereby improving the heat dissipation capability of semiconductor chips.
Disclosure of Invention
The invention aims to provide a preparation method of a semiconductor wafer with a heat dissipation diamond substrate, which is used for obtaining good heat dissipation performance by utilizing high heat conductivity and heat stability of diamond as a substrate material.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a preparation method of a semiconductor wafer with a heat dissipation diamond substrate comprises the following steps:
S1, polishing one end face of a semiconductor wafer to form a polished surface;
s2, injecting ions (hydrogen or other ions) into the end face of the semiconductor wafer, namely the lower surface of the polished surface, and forming a microcavity at the injection position, wherein a semiconductor film is formed on the microcavity, and controlling the thickness of the thinnest semiconductor required on the semiconductor wafer by controlling the energy of ion injection, so that a semiconductor film with very thin and very uniform thickness is obtained by the process;
S3, preparing a semiconductor film with a diamond substrate;
method 1 is employed, as shown in fig. 1;
s3-1a, directly growing diamond on the back surface of the semiconductor film by a chemical vapor deposition method to serve as a wafer substrate;
S3-1b, stripping the semiconductor film with the diamond substrate by high temperature in the vapor deposition process or high temperature heating treatment;
Or method 2, as shown in fig. 2;
s3-2a, polishing one end face of the diamond wafer to form a polished surface;
s3-2b, bonding diamond on the back surface of the semiconductor film by bonding the polished surfaces of the semiconductor wafer and the diamond wafer to serve as a wafer substrate;
S3-2c, stripping the semiconductor film with the diamond substrate through high-temperature heating treatment;
S4, annealing the stripped semiconductor film with the diamond substrate, and recovering lattice damage of the semiconductor film caused by the process of implanting ions;
S5, polishing the stripping surface of the semiconductor film with the diamond substrate to obtain a semiconductor wafer with the diamond substrate and a bottom heat dissipation structure, as shown in FIG. 3 a;
S6, etching a lateral heat dissipation area of the semiconductor film on the top of the semiconductor wafer with the diamond substrate and with the bottom heat dissipation structure through photoetching or electron beam or ion beam to obtain the semiconductor wafer with the diamond substrate and with the bottom and the lateral heat dissipation structure, wherein the semiconductor wafer with the diamond substrate and the diamond substrate are shown in an example in FIG. 3b and FIG. 3 c;
further, the semiconductor is one of silicon, germanium, indium phosphide, gallium arsenide, silicon carbide, gallium oxide, zinc oxide or aluminum nitride.
Further, the diamond is single crystal diamond or polycrystalline diamond.
The invention has the advantages that:
1. since diamond is the wear-resistant material with the highest hardness found in nature, diamond is also an ideal heat sink material due to its extremely high thermal conductivity and thermal stability, and its thermal conductivity can reach 2000W/m.k, 5 times that of copper, 10 times that of aluminum, 4 times that of silicon carbide, 13 times that of silicon, and 43 times that of gallium arsenide. According to the invention, the diamond is used as the substrate, so that the diamond has good supporting performance and good heat dissipation performance;
2. the manufacturing method of the invention can obtain the thinnest semiconductor film required by the semiconductor wafer, and the semiconductor wafer after the semiconductor film is stripped is not damaged by ion implantation, can be reused, and maximally utilizes the raw materials of the semiconductor wafer, thereby effectively reducing the cost and energy consumption for manufacturing the wafer.
The invention realizes the semiconductor wafer with the diamond substrate and the bottom and the transverse heat dissipation structure by etching part of the semiconductor film, thereby greatly improving the heat dissipation capacity of the semiconductor chip.
Drawings
Fig. 1 is a process flow diagram of a semiconductor wafer with a diamond substrate of the present invention in which diamond is grown directly on the back side of a semiconductor thin film as the wafer substrate by chemical vapor deposition.
Fig. 2 is a process flow diagram of a semiconductor wafer with a diamond substrate according to the present invention in which a diamond wafer is bonded to the back surface of a semiconductor film as a wafer substrate by bonding.
Fig. 3a is a block diagram of a semiconductor wafer with a diamond substrate having a bottom heat sink structure.
Fig. 3b is a block diagram of a semiconductor wafer with a diamond substrate having both a bottom and a stepped lateral heat spreading structure.
Fig. 3c is a diagram of a semiconductor wafer structure with a diamond substrate having both bottom and trench type lateral heat spreading structures.
Fig. 4 is a process flow diagram of a method of preparing a silicon wafer with a thermally dissipative polycrystalline diamond substrate in accordance with embodiment 1 of the invention.
Fig. 5a is a block diagram of a silicon wafer with a polycrystalline diamond substrate having a bottom heat sink structure prepared in example 1.
Fig. 5b is a diagram of a silicon wafer structure with a polycrystalline diamond substrate with a bottom and stepped lateral heat spreading structure prepared in example 1.
Fig. 5c is a block diagram of a silicon wafer with a polycrystalline diamond substrate having both a bottom and a trench type lateral heat spreading structure prepared in example 1.
Fig. 6 is a process flow diagram of a method of preparing a silicon wafer with a thermally dissipative single crystal diamond substrate of example 2 of the invention.
Fig. 7a is a block diagram of a silicon wafer with single crystal diamond substrate with bottom heat sink structure prepared in example 2.
Fig. 7b is a block diagram of a silicon wafer with single crystal diamond substrate having both a bottom and a stepped lateral heat spreading structure prepared in example 2.
Fig. 7c is a block diagram of a silicon wafer with single crystal diamond substrate with both bottom and trench type lateral heat spreading structures prepared in example 2.
Detailed Description
Example 1
The embodiment takes a semiconductor silicon material as an example, and describes an implementation process of a preparation method of a silicon wafer with a heat dissipation polycrystalline diamond substrate. However, the preparation method of the present patent is not limited to the silicon semiconductor material. But may also be applied to other semiconductor materials.
As shown in fig. 4, a method for preparing a silicon wafer with a heat-dissipating polycrystalline diamond substrate comprises:
1. polishing one end face of the silicon wafer to form a polished surface;
2. And (3) injecting hydrogen ions into the end face of the silicon wafer by using Smart-Cut technology, forming a microcavity at the injection position, and controlling the thickness of the thinnest silicon film required on the silicon wafer by controlling the energy of hydrogen ion injection. With this process, a very thin and uniform silicon film is obtained;
3. Directly growing polycrystalline diamond on the back surface of a silicon film by using a Microwave Plasma Chemical Vapor Deposition (MPCVD) method to serve as a silicon wafer substrate; compared with other technologies such as a hot wire method, the MPCVD method has the advantages of stable reaction conditions, high quality of grown crystals, simple equipment and easy growth of high-quality diamond films. The MPCVD method for synthesizing diamond utilizes microwave energy to ionize carbon-containing gas and hydrogen to generate plasma containing carbon-containing active particle groups, and under the guidance of electromagnetic field, the wafer is heated by utilizing strong heat conduction and heat radiation of the plasma to reach the temperature required by diamond deposition growth, the carbon-containing groups reach the surface of the seed product and are adsorbed to generate chemical reaction and nucleate, the reaction gas is continuously supplied after being resolved and diffused on the surface of the silicon wafer, and the diamond starts to continuously grow on the silicon wafer;
4. Stripping the silicon film with the polycrystalline diamond substrate by the high temperature in the vapor deposition process of the step 3 or the subsequent additional high temperature heating;
5. then carrying out high-temperature annealing to recover the lattice damage of the silicon film caused by the process of implanting hydrogen ions;
6. Polishing the stripped surface of the silicon film with the polycrystalline diamond substrate to obtain a silicon wafer with the polycrystalline diamond substrate and a bottom heat dissipation structure, as shown in fig. 5 a;
7. In order to further increase the heat dissipation of the semiconductor silicon chip, the above etching process may use a photolithography process (a process of gluing, exposing, developing, etching, etc.) or a direct etching process using an electron beam/ion beam, by etching a portion of the semiconductor silicon film to realize a silicon wafer with a polycrystalline diamond substrate having both a bottom and a lateral heat dissipation structure.
As shown by way of example in fig. 5b, the periphery of the optoelectronic functional region of the semiconductor silicon film is etched to the diamond substrate. And the silicon wafer is named as a silicon wafer with a polycrystalline diamond substrate and simultaneously provided with a bottom and a step type transverse heat dissipation structure.
As shown by way of example in fig. 5c, the periphery of the optoelectronic functional region of the semiconductor silicon film is etched to form a trench, and the bottom of the trench reaches the diamond substrate. A silicon wafer with a polycrystalline diamond substrate, named as a lateral heat dissipation structure with a bottom and a groove.
Example 2
This embodiment takes a semiconductor silicon material as an example, and describes an implementation process of a method for manufacturing a silicon wafer with a single crystal diamond substrate. However, the preparation method of the present patent is not limited to the silicon semiconductor material. But may also be applied to other semiconductor materials.
As shown in fig. 6, a method for preparing a silicon wafer with a heat-dissipating single crystal diamond substrate comprises:
1. Polishing one end face of the silicon wafer and one end face of the monocrystalline diamond wafer respectively;
2. And (3) injecting hydrogen ions into the end face of the silicon wafer by using Smart-Cut technology, forming a microcavity at the injection position, and controlling the thickness of the thinnest silicon film required on the silicon wafer by controlling the energy of hydrogen ion injection. With this process, a very thin and uniform silicon film is obtained;
3. Bonding monocrystalline diamond on the back surface of the semiconductor silicon film by bonding the polished surfaces of the silicon wafer and the monocrystalline diamond wafer to serve as a wafer substrate;
4. stripping the silicon film with the monocrystalline diamond substrate through high-temperature heating treatment;
5. then carrying out high-temperature annealing to recover the lattice damage of the silicon film caused by the process of implanting hydrogen ions;
6. Polishing the above peeled surface of the silicon film with single crystal diamond substrate to obtain a silicon wafer with single crystal diamond substrate having a bottom heat dissipation structure, as shown in fig. 7 a;
7. In order to further increase the heat dissipation of the semiconductor silicon chip, the above etching process may use a photolithography process (a process of gluing, exposing, developing, etching, etc.) or a direct etching process using an electron beam/ion beam, by etching a portion of the semiconductor silicon film to realize a silicon wafer structure having both a bottom and a lateral heat dissipation structure.
As shown by way of example in fig. 7b, the periphery of the optoelectronic functional area of the semiconductor silicon film is etched to the diamond substrate. And the silicon wafer is named as a silicon wafer with a monocrystalline diamond substrate and simultaneously provided with a bottom and a step type transverse heat dissipation structure.
As shown by way of example in fig. 7c, the periphery of the optoelectronic functional region of the semiconductor silicon film is etched to form a trench, and the bottom of the trench reaches the diamond substrate. A silicon wafer with a monocrystalline diamond substrate, named as a silicon wafer with a bottom and a groove type transverse heat dissipation structure at the same time.
Claims (3)
1. The preparation method of the semiconductor wafer with the heat dissipation diamond substrate is characterized by comprising the following steps of:
S1, polishing one end face of a semiconductor wafer to form a polished surface;
S2, implanting ions into the lower surface of the polished surface of the semiconductor wafer by using a Smart-Cut technology, forming a microcavity at the implantation position, and forming a semiconductor film on the microcavity;
S3, preparing a semiconductor film with a diamond substrate, wherein the method 1 is adopted:
s3-1a, directly growing diamond on the back surface of the semiconductor film by a chemical vapor deposition method to serve as a wafer substrate;
S3-1b, stripping the semiconductor film with the diamond substrate by high temperature in the vapor deposition process or high temperature heating treatment;
Or method 2:
s3-2a, polishing one end face of the diamond wafer to form a polished surface;
S3-2b, bonding the polished surface of the diamond wafer on the back surface of the semiconductor film by bonding the polished surfaces of the semiconductor wafer and the diamond wafer to serve as a wafer substrate;
S3-2c, stripping the semiconductor film of the diamond substrate through high-temperature heating treatment;
s4, annealing the stripped semiconductor film with the diamond substrate;
s5, polishing the stripping surface of the semiconductor film with the diamond substrate to obtain a semiconductor wafer with the diamond substrate and a bottom heat dissipation structure;
s6, etching the semiconductor film on the top of the semiconductor wafer with the diamond substrate and with the bottom heat dissipation structure through photoetching or electron beam or ion beam to form a transverse heat dissipation area, and obtaining the semiconductor wafer with the diamond substrate and with the bottom and the transverse heat dissipation structure.
2. The method for manufacturing a semiconductor wafer with a heat-dissipating diamond substrate according to claim 1, wherein: the semiconductor is one of silicon, germanium, indium phosphide, gallium arsenide, silicon carbide, gallium oxide, zinc oxide or aluminum nitride.
3. The method for manufacturing a semiconductor wafer with a heat-dissipating diamond substrate according to claim 2, wherein: the diamond is monocrystalline diamond or polycrystalline diamond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202410248794.7A CN117894690A (en) | 2024-03-05 | 2024-03-05 | Preparation method of semiconductor wafer with heat dissipation diamond substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410248794.7A CN117894690A (en) | 2024-03-05 | 2024-03-05 | Preparation method of semiconductor wafer with heat dissipation diamond substrate |
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| Publication Number | Publication Date |
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| CN117894690A true CN117894690A (en) | 2024-04-16 |
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| CN202410248794.7A Pending CN117894690A (en) | 2024-03-05 | 2024-03-05 | Preparation method of semiconductor wafer with heat dissipation diamond substrate |
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- 2024-03-05 CN CN202410248794.7A patent/CN117894690A/en active Pending
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