CN117878050A - Electrostatic chuck for Taiko wafer process and Taiko wafer support ring removing method - Google Patents
Electrostatic chuck for Taiko wafer process and Taiko wafer support ring removing method Download PDFInfo
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- CN117878050A CN117878050A CN202410084112.3A CN202410084112A CN117878050A CN 117878050 A CN117878050 A CN 117878050A CN 202410084112 A CN202410084112 A CN 202410084112A CN 117878050 A CN117878050 A CN 117878050A
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- electrostatic chuck
- wafer
- taiko
- taiko wafer
- support ring
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000012545 processing Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000002985 plastic film Substances 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 107
- 238000010586 diagram Methods 0.000 description 7
- 239000012634 fragment Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The application discloses an electrostatic chuck and a Taiko wafer support ring removing method for Taiko wafer process, wherein the electrostatic chuck comprises a middle part and an edge part, the middle part of the electrostatic chuck is embedded with an electrode, the edge part of the electrostatic chuck is not embedded with an electrode, and a groove is arranged on the surface between the edge part and the middle part of the electrostatic chuck. According to the scheme, the difficulty in removing the Taiko wafer supporting ring is reduced, and the wafer processing yield is improved.
Description
Technical Field
The invention relates to the technical field of chip processing, in particular to an electrostatic chuck for a Taiko wafer process and a Taiko wafer supporting ring removing method.
Background
With the development of IC technology, the demands for the integration level, speed and reliability of chips are increasing, which requires smaller and thinner chips. In order to reduce the production cost of single chips, more and more chips are produced by wafers. In the field of power devices, typical process flows of wafer back thinning technology include Taiko grinding, back wet etching, back metallization, ring cutting and ring taking. A support ring (taikoning) is introduced into the process flow to reduce the risk of subsequent wafer warpage or cracking.
Unlike the prior back grinding approach, the Taiko process grinds only the middle region of the wafer during grinding to leave a support ring of a certain width at the edge. After Taiko grinding is completed, the supporting ring at the edge part needs to be cut, and the wafer is easily warped or cracked due to the internal stress of the wafer caused by the previous grinding process, so that the subsequent process is difficult.
Disclosure of Invention
In order to solve the problem of warpage or cracks generated after the Taiko wafer supporting ring is cut off, the scheme provides an electrostatic chuck for Taiko wafer manufacturing process and a Taiko wafer supporting ring removing method, the structure and internal electrode distribution of the electrostatic chuck are improved, the electrostatic chuck only adsorbs the middle part of the Taiko wafer, and the supporting ring (Taiko ring) is cut off and removed along the groove of the electrostatic chuck, so that the difficulty of Taiko wafer removal can be reduced. Because the Taiko wafer is always adsorbed on the electrostatic chuck before the electrostatic chuck is removed, the problems of wafer warpage or crack fragments and the like can be greatly reduced, and the processing yield is improved.
According to an aspect of the present invention, there is provided an electrostatic chuck for Taiko wafer process, in which an electrode is buried in a middle portion of the electrostatic chuck, an electrode is not buried in an edge portion of the electrostatic chuck, and a groove is provided at a surface between the edge portion and the middle portion of the electrostatic chuck.
Optionally, in the electrostatic chuck for Taiko wafer process provided by the present invention, the middle portion of the electrostatic chuck includes an electrode plate and an insulating plate, and when a high voltage is applied to the electrode plate, an electric field is formed between the electrode plate and the insulating plate to generate electrostatic attraction force; the edge portion of the electrostatic chuck includes only the insulating plate.
Optionally, in the electrostatic chuck for a Taiko wafer process provided by the present invention, the Taiko wafer includes a support ring with a middle portion and an edge portion, and a diameter of the middle portion of the electrostatic chuck is not greater than a diameter of the middle portion of the Taiko wafer.
Optionally, in the electrostatic chuck for Taiko wafer process provided by the present invention, when the Taiko wafer is attached to the electrostatic chuck at the front side and a dc voltage is applied to the electrostatic chuck, the middle portion of the Taiko wafer is tightly adsorbed on the electrostatic chuck, and no electrostatic adsorption force exists between the edge portion of the Taiko wafer and the edge portion of the electrostatic chuck, so that the Taiko wafer cannot be adsorbed on the electrostatic chuck.
Optionally, in the electrostatic chuck for Taiko wafer process provided by the present invention, the width of the outer side of the groove is smaller than or equal to the width of the Taiko wafer supporting ring (Taiko ring).
According to a second aspect of the present invention, there is provided a Taiko wafer support ring removal method comprising: adsorbing the front surface of the Taiko wafer on the electrostatic chuck; removing a support ring on the back edge of the Taiko wafer on the electrostatic chuck; a dicing film is stuck on the back surface of the Taiko wafer from which the supporting ring is removed; and removing the electrostatic chuck to obtain the wafer after removing the supporting ring and pasting the film.
Optionally, in the Taiko wafer support ring removal method provided by the present invention, the electrostatic chuck is positioned according to the material and the size of the Taiko wafer, so that the center of the Taiko wafer is aligned with the center of the electrostatic chuck; and selecting a direct current voltage output by the electrostatic chuck power supply according to the material and the size of the Taiko wafer, so that the middle part of the front surface of the Taiko wafer is adsorbed on the middle part of the electrostatic chuck.
Optionally, in the Taiko wafer support ring removing method provided by the invention, any one of grinding, abrasive cutting and laser cutting is used to cut the support ring along the inner edge of the groove of the electrostatic chuck, and the cut support ring is removed.
Optionally, in the Taiko wafer supporting ring removing method provided by the invention, the electrostatic chuck power is turned off, so that the adsorption force between the middle part of the electrostatic chuck and the middle part of the Taiko wafer is eliminated, and the wafer is removed.
Optionally, in the Taiko wafer supporting ring removing method provided by the invention, the Taiko wafer is a semiconductor wafer or an insulator wafer, and the dicing film is a transparent plastic film.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention in order that the same may be more clearly understood and to make the same and other objects, features and advantages of the present invention more readily apparent.
Drawings
FIG. 1 illustrates a schematic diagram of an electrostatic chuck structure for a Taiko wafer process, according to one embodiment of the invention;
FIG. 2 illustrates a schematic diagram of an electrostatic chuck deformation configuration for a Taiko wafer process, according to one embodiment of the invention;
FIG. 3 illustrates a flow diagram of a Taiko wafer support ring removal method 300 according to one embodiment of the invention;
FIG. 4 shows a schematic view of a Taiko wafer attached to an electrostatic chuck;
FIG. 5 shows a schematic view of a support ring cut away from the edge of a Taiko wafer;
FIG. 6 shows a schematic illustration of the application of a dicing film on the back of a Taiko wafer;
fig. 7 shows a schematic diagram of the removal of the electrostatic chuck.
Detailed Description
After the high-voltage direct current is applied to the inner electrode of the electrostatic chuck, polarized charges are generated on the dielectric surface to form an electrostatic field, and the electrostatic field enables the contact surface of the wafer and the electrostatic chuck to generate the polarized charges, namely charges with opposite polarities are accumulated on the corresponding areas of the wafer surface and the electrostatic chuck surface, so that the wafer is tightly adsorbed on the surface of the wafer by the electrostatic chuck. Whether a wafer surface generates a polarization charge or a free charge depends on the conductivity of the wafer or plating film, e.g., a semiconductor die such as a silicon wafer generates a free charge and other insulator die such as sapphire generates a polarization charge.
In order to meet the requirement of quick removal in the Taiko wafer process, improve the yield and reduce the generation of cracks, the invention provides an electrostatic chuck for the Taiko wafer process and a Taiko wafer supporting ring removal method.
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Fig. 1 shows a schematic diagram of an electrostatic chuck structure for Taiko wafer processing according to one embodiment of the present invention. As shown in fig. 1, the electrode is buried in the middle part of the electrostatic chuck, the electrode is not buried in the edge part of the electrostatic chuck, and a groove is formed on the surface between the edge part and the middle part of the electrostatic chuck, so that the support ring is cut in the subsequent process of the Taiko wafer.
In one embodiment of the present invention, the electrostatic chuck is divided into a middle portion and an edge portion according to the presence or absence of the attraction force, i.e., the middle portion of the electrostatic chuck includes an electrode plate and an insulating plate, and an electric field is formed between the electrode plate and the insulating plate to generate the electrostatic attraction force when a high voltage is applied to the electrode plate. The edge portion of the electrostatic chuck includes only an insulating plate, and does not generate electrostatic attraction force.
The width of the outer side of the groove is smaller than or equal to the width of the Taiko wafer supporting ring. Fig. 2 shows a schematic view of an electrostatic chuck deformation structure for Taiko wafer processing according to an embodiment of the present invention. As shown in fig. 2, the width of the groove is greater than the width of the Taiko wafer support Ring (Taiko Ring), and the edge portion of the electrostatic chuck is lower than the middle portion, i.e., a step is formed between the edge portion and the middle portion of the electrostatic chuck.
The Taiko wafer is a wafer based on Taiko back grinding process, and includes a middle portion and an edge support Ring (Taiko Ring), the edge support Ring (Taiko Ring) being about 3 mm. The diameter of the middle portion of the electrostatic chuck is less than or equal to the diameter of the middle portion of the Taiko wafer. When the Taiko wafer is attached to the electrostatic chuck at the front side and a dc voltage is applied to the electrostatic chuck, the middle portion of the Taiko wafer is tightly attached to the electrostatic chuck, and the edge portion of the Taiko wafer cannot be attached to the electrostatic chuck.
In one embodiment of the present invention, there is also provided a Taiko wafer support ring removing method, in which the front surface of the Taiko wafer is adsorbed on the electrostatic chuck shown in fig. 1, the edge support ring (Taiko ring) is cut off and removed, and then a dicing film is applied to the back surface of the wafer, and the electrostatic chuck is removed, thereby completing the process of removing the support ring (Taiko ring). Because the Taiko wafer is always adsorbed on the electrostatic chuck before the electrostatic chuck is removed, the problems of wafer warpage or crack fragments and the like can be greatly reduced, and the processing yield is improved.
Fig. 3 shows a flow diagram of a Taiko wafer support ring removal method 300 according to one embodiment of the invention. As shown in fig. 3, in step S310, the Taiko wafer front surface is adsorbed on the electrostatic chuck.
The position of the electrostatic chuck may be arranged such that the center of the Taiko wafer is aligned with the center of the electrostatic chuck, depending on the material and size of the Taiko wafer; and selecting a direct current voltage output by the electrostatic chuck power supply according to the material and the size of the Taiko wafer, so that the middle part of the front surface of the Taiko wafer is adsorbed on the middle part of the electrostatic chuck.
In use, the electrostatic chuck needs to be in a dry environment to ensure its suction force is stable, and an appropriate voltage needs to be applied to generate sufficient suction force.
Fig. 4 shows a schematic view of Taiko wafer attraction to an electrostatic chuck. As shown in fig. 4, the front surface of the Taiko wafer is attached to the surface of the electrostatic chuck such that the center of the Taiko wafer is aligned with the center of the electrostatic chuck, and a support ring (Taiko ring) is positioned at the edge portion of the electrostatic chuck, while ensuring that the contact surface is free from dust or dirt, so that the wafer is completely contacted with the chuck, while avoiding electrostatic interference. The Taiko wafer may be a semiconductor die or an insulator die.
Subsequently in step S320, the support ring on the electrostatic chuck at the back edge of the Taiko wafer is removed. Fig. 5 shows a schematic view of the support ring cut away from the edge of the Taiko wafer. As shown in fig. 5, the support ring (taikoning) may be cut off along the inner edge of the groove of the electrostatic chuck using any one of grinding, abrasive cutting, and laser cutting, and the cut support ring may be removed.
Next, in step S330, a dicing film is applied to the back surface of the Taiko wafer from which the support ring is removed. The scribing film is a transparent plastic film and is used for protecting the surface of the wafer. Fig. 6 shows a schematic view of the application of a dicing film on the back side of the Taiko wafer. As shown in fig. 6, the dicing film is closely attached to the back surface of the wafer, so that good adhesion between the film and the wafer can be ensured.
Finally, in step S340, the electrostatic chuck is removed, and the wafer after removing the support ring and attaching the film is obtained. Fig. 7 shows a schematic diagram of the removal of the electrostatic chuck. As shown in fig. 7, the electrostatic chuck power is turned off to remove the suction force between the middle part of the electrostatic chuck and the middle part of the Taiko wafer, and the wafer is removed to obtain the wafer with the support ring and the film removed.
According to the electrostatic chuck and the Taiko wafer supporting Ring removing method for the Taiko wafer manufacturing process, the structure and the internal electrode distribution of the electrostatic chuck are improved, so that the electrostatic chuck only adsorbs the middle part of the Taiko wafer, and the supporting Ring (Taiko Ring) is cut off and removed along the inner edge of the groove of the electrostatic chuck, and the difficulty in Taiko wafer removal can be reduced. Because the Taiko wafer is always adsorbed on the electrostatic chuck before the electrostatic chuck is removed, the problems of wafer warpage or crack fragments and the like can be greatly reduced, and the processing yield is improved.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
As used herein, unless otherwise specified the use of the ordinal terms "first," "second," "third," etc., to describe a general object merely denote different instances of like objects, and are not intended to imply that the objects so described must have a given order, either temporally, spatially, in ranking, or in any other manner.
While the invention has been described with respect to a limited number of embodiments, those skilled in the art, having benefit of the above description, will appreciate that other embodiments are contemplated within the scope of the invention as described herein. Furthermore, it should be noted that the language used in the specification has been principally selected for readability and instructional purposes, and may not have been selected to delineate or circumscribe the inventive subject matter. Accordingly, many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the appended claims. The disclosure of the present invention is intended to be illustrative, but not limiting, of the scope of the invention, which is defined by the appended claims.
Claims (10)
1. An electrostatic chuck for Taiko wafer processing, wherein the electrostatic chuck comprises a middle portion and an edge portion, an electrode is embedded in the middle portion of the electrostatic chuck, the electrode is not embedded in the edge portion of the electrostatic chuck, and a groove is formed in a surface between the edge portion and the middle portion of the electrostatic chuck.
2. The electrostatic chuck for use in Taiko wafer processing according to claim 1, wherein a middle portion of the electrostatic chuck includes an electrode plate and an insulating plate, and an electric field is formed between the electrode plate and the insulating plate to generate electrostatic attraction when a high voltage is applied to the electrode plate; the edge portion of the electrostatic chuck includes only an insulating plate.
3. The electrostatic chuck for use with a Taiko wafer process of claim 1, wherein the Taiko wafer includes a support ring having a middle portion and an edge portion, the diameter of the middle portion of the electrostatic chuck being no greater than the diameter of the middle portion of the Taiko wafer.
4. An electrostatic chuck for use in a Taiko wafer process as claimed in claim 3, wherein the width of the outside of said recess is less than or equal to the width of the Taiko wafer support ring.
5. The electrostatic chuck for use in a Taiko wafer process according to claim 4, wherein a middle portion of the Taiko wafer is closely adhered to a middle portion of the electrostatic chuck and an edge portion of the Taiko wafer is not adhered to the electrostatic chuck when the Taiko wafer is attached to the electrostatic chuck at a front side thereof, and a dc voltage is applied to the electrostatic chuck.
6. A Taiko wafer support ring removal method, comprising:
adsorbing the Taiko wafer front side onto the electrostatic chuck as claimed in any one of claims 1-5;
removing a support ring on the back edge of the Taiko wafer on the electrostatic chuck;
a dicing film is stuck on the back surface of the Taiko wafer from which the supporting ring is removed;
and removing the electrostatic chuck to obtain the wafer after removing the supporting ring and attaching the film.
7. The Taiko wafer support ring removal method according to claim 6, characterized in that the step of adsorbing the Taiko wafer front surface on the electrostatic chuck as set forth in any one of claims 1 to 5 includes:
arranging the position of the electrostatic chuck according to the material and the size of the Taiko wafer, so that the center of the Taiko wafer is aligned with the center of the electrostatic chuck;
and selecting a direct current voltage output by the electrostatic chuck power supply according to the material and the size of the Taiko wafer, so that the middle part of the front surface of the Taiko wafer is adsorbed on the middle part of the electrostatic chuck.
8. The Taiko wafer support ring removal method according to claim 6, wherein the step of removing a support ring on the electrostatic chuck at a backside edge of a Taiko wafer comprises:
cutting off the supporting ring along the groove of the electrostatic chuck by any one method of grinding, abrasive wheel cutting and laser cutting;
the cut-out support ring is removed.
9. The Taiko wafer support ring removal method according to claim 6, wherein the step of removing the electrostatic chuck to obtain a wafer after removing the support ring and attaching the film comprises:
and (3) turning off the power supply of the electrostatic chuck, eliminating the adsorption force between the middle part of the electrostatic chuck and the middle part of the Taiko wafer, and taking down the wafer.
10. The Taiko wafer supporting ring removal method according to claim 6, wherein the Taiko wafer is a semiconductor wafer or an insulator wafer, and the dicing film is a transparent plastic film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410084112.3A CN117878050A (en) | 2024-01-19 | 2024-01-19 | Electrostatic chuck for Taiko wafer process and Taiko wafer support ring removing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410084112.3A CN117878050A (en) | 2024-01-19 | 2024-01-19 | Electrostatic chuck for Taiko wafer process and Taiko wafer support ring removing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117878050A true CN117878050A (en) | 2024-04-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410084112.3A Pending CN117878050A (en) | 2024-01-19 | 2024-01-19 | Electrostatic chuck for Taiko wafer process and Taiko wafer support ring removing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117878050A (en) |
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2024
- 2024-01-19 CN CN202410084112.3A patent/CN117878050A/en active Pending
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