CN117872610A - Scalable high-power semiconductor laser homogenizing device - Google Patents
Scalable high-power semiconductor laser homogenizing device Download PDFInfo
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- CN117872610A CN117872610A CN202410072501.4A CN202410072501A CN117872610A CN 117872610 A CN117872610 A CN 117872610A CN 202410072501 A CN202410072501 A CN 202410072501A CN 117872610 A CN117872610 A CN 117872610A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 106
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000000265 homogenisation Methods 0.000 claims description 7
- 238000007493 shaping process Methods 0.000 claims description 7
- 238000013461 design Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 18
- 238000012545 processing Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
- G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention provides an expandable high-power semiconductor laser homogenizing device, which comprises one or more semiconductor laser stacks, parallel plates, a beam expanding module and a beam collimating module, wherein an output beam of each semiconductor laser stack sequentially passes through the parallel plates, the beam expanding module and the collimating module; the parallel flat plate is used for overlapping the light spot formed by the semiconductor laser stack with the center of the structure; the beam expanding module is used for carrying out beam expanding operation on the output beam of the semiconductor laser stack; the beam collimation module is used for focusing the output beam of the semiconductor laser stack. The embodiment can realize the expandability of the light source with the horizontal direction, the vertical direction and various structures by adjusting the horizontal distance and the vertical distance of each semiconductor laser stack and the rotation angle of the semiconductor laser stack around the slow axis.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to an expandable high-power semiconductor laser homogenizing device.
Background
Along with the rapid development of China in the fields of aviation detection, aerospace, and the like, the high-energy laser is used as equipment capable of providing a heat source, the temperature which cannot be reached by the traditional heating test means can be reached, and the high-energy laser equipment is widely applied to the cutting and welding field of metal materials.
However, it is necessary to ensure that the output spot of the laser light source is consistent with the shape and size of the device, and this condition is called the scalability of the light source. The scalable high-energy heat source with uniform energy distribution is a new hot spot for research.
In order to meet the heating requirements in different scenes, the laser beams are subjected to homogenization, shaping, circular or rectangular and collimation variable divergence angle treatment with different requirements.
The prior technical proposal for realizing laser homogenization and shaping mainly comprises a binary diffraction lens, an aspheric lens group, a laser homogenization sheet, an optical fiber waveguide, a micro lens array and the like.
The binary diffraction lens is etched on the surface of the lens by a mask processing technology to obtain a step structure, the lens is a pure-phase optical device and has high diffraction efficiency, but the design method is complex, the higher the number of steps is, the higher the etching precision is required, the higher the processing difficulty is, and therefore the design period and the cost are difficult to control.
The aspheric lens group utilizes a plurality of aspheric lenses to realize shaping, homogenizing and collimating treatment on the beams of the transverse axis and the longitudinal axis, and the method has the advantages of simple structure and small energy loss, but one group of aspheric lenses can only homogenize the laser beams with specific energy distribution, and has no universality, large processing difficulty and high cost. The laser homogenizing sheet can only achieve the homogenizing target for multimode laser, and has unsatisfactory shaping effect.
The optical fiber waveguide method utilizes the principle of total reflection of light rays to reflect light coupled into an optical fiber for multiple times, and light spots with uniform energy distribution are obtained on the emergent surface of the optical fiber, but the laser shaping and homogenization can be realized only at a focus, so that the size of the light spots is limited to a certain extent.
The microlens array is mainly columnar aspheric microlenses, and has the advantages of high energy transmission efficiency, compact structure and easy integration. The defects are that: firstly, the filling factor is not high, a transition area exists, and the direct transmitted light beam can cause uneven light beam energy distribution; secondly, the surface type is difficult to control, the traditional refractive microlens array is generally aspheric, and the characteristic size is in the micron order, which presents a great challenge to the processing technology.
It is difficult to ensure that the semiconductor laser stack light source and the emergent light spot are consistent in shape and size by using the method.
Thus, a new homogenization system with an expandable light source is needed to solve the above-mentioned problems.
Disclosure of Invention
The summary of the invention is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description. The disclosure is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.
Some embodiments of the present invention provide a scalable high power semiconductor laser homogenizing device to solve the technical problems mentioned in the background section above.
The device comprises one or more semiconductor laser stacks, parallel plates, a beam expanding module and a beam collimating module, wherein the output beam of each semiconductor laser stack sequentially passes through the parallel plates, the beam expanding module and the collimating module; the parallel flat plate is used for overlapping the light spot formed by the semiconductor laser stack with the center of the structure; the beam expanding module is used for carrying out beam expanding operation on the output beam of the semiconductor laser stack; the beam collimation module is used for focusing the output beam of the semiconductor laser stack; in response to the semiconductor laser stacks being more than two, the scalability of the light sources in the horizontal direction, the vertical direction and the various structures can be realized by adjusting the horizontal pitch and the vertical pitch of each semiconductor laser stack and the angle of rotation of the semiconductor laser stack around the slow axis.
The above embodiment of the present invention has the following advantageous effects: the size of the far-field light spot can be controlled by adopting the expandable semiconductor laser stack light source. Furthermore, the parallel flat plate is adopted to deflect the light emitted by the semiconductor laser stack light source to the light path, so that the center of the light spot and the center of the structure are overlapped. Still further, the beam expansion module is used for carrying out beam expansion processing on the laser beam. And adopting a beam collimation module to perform collimation treatment on the laser beam. The shape and the size of far-field light spots and the fluence are controlled by adjusting the number of the semiconductor laser stacks, the horizontal spacing and the vertical spacing of the semiconductor laser stack light sources and the rotation angle of the semiconductor laser stack light sources around the slow axis, so that the expandability of output light beams is realized, and the output light beams meet the requirements of different heating scenes.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an embodiment of a scalable high power semiconductor laser homogenizing apparatus of the present invention;
FIG. 2 is a schematic diagram of a four-stack 1×4 optical path design of an expandable high-power semiconductor homogenizing device according to the present invention;
FIG. 3 is a schematic diagram of a four-stack 1×4 optical path design flare for an expandable high-power semiconductor homogenizing device in accordance with the present invention;
FIG. 4 is a diagram of the structure of an expandable semiconductor laser stack light source of an expandable high-power semiconductor homogenizing device according to the present invention;
FIG. 5 is a schematic diagram showing a light path design of a stack of an expandable high-power semiconductor homogenizer rotated + -5.2 degrees about a slow axis;
FIG. 6 is a schematic diagram of a light path design light spot of a stack of an expandable high-power semiconductor homogenizing device according to the present invention rotated + -5.2 degrees around a slow axis;
FIG. 7 is a schematic diagram of a four-stack vertical 2X 2 optical path design of an expandable high-power semiconductor homogenizing device of the present invention;
fig. 8 is a schematic diagram of a four-stack 2×2 optical path design light spot of an expandable high-power semiconductor homogenizing device according to the present invention.
Detailed Description
The technical solutions of the present invention will be clearly and completely described in connection with the embodiments, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. Furthermore, the terms "mounted," "connected," "coupled," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
As shown in fig. 1, the invention discloses a scalable high-power semiconductor homogenizing device, which comprises one or more semiconductor laser stacks 1, a parallel light plate 2, a beam expanding module and a beam collimating module. The output beam of each semiconductor laser stack 1 passes through the parallel light plate 2, the beam expanding module and the beam collimating module. The semiconductor laser stack 1 may be a JENOPTIK JOLD-x-CAFN-25A type semiconductor laser stack in germany.
The parallel light plate 2 is used for overlapping the light spot formed by the semiconductor laser stack 1 with the center of the structure. The beam expanding module is used for performing beam expanding operation on the output beam of the semiconductor laser stack 1.
Specifically, since the center of the output beam emitted by the semiconductor laser stack 1 is not located at the center of the structure of the device, the output beam of the semiconductor laser stack 1 fills the entire optical path, so the present invention introduces the parallel light plate 2 and the beam expansion module. The parallel light plate 2 is obliquely disposed to the output beam of the semiconductor laser stack 1. The beam expansion module comprises two groups, and the left side (the direction in fig. 1) beam expansion module comprises a plano-convex lens 3 and a plano-concave lens 4. The right (direction in fig. 1) beam expansion module comprises a plano-convex lens 5 and a plano-concave lens 6. Although fig. 1 illustrates two sets of beam expansion modules, this is not exclusive, and one skilled in the art may adjust the number of beam expansion modules according to the actual situation.
Specifically, taking a left beam expansion module as an example, the plane side of the plano-convex lens 3 faces the semiconductor laser stack 1 corresponding to the plano-convex lens 3; the concave side of the plano-concave lens 4 faces the semiconductor laser stack 1 corresponding to the plano-concave lens 4.
In actual operation, the output beam of the light source of the semiconductor laser stack 1 passes through the parallel plate 2, so that the center of the light path is deflected, and the center of the light spot is overlapped with the center of the structure. The two groups of beam expansion modules realize the two-side fast axis beam expansion of the output beam of the semiconductor laser stack 1.
The beam collimation module comprises a slow axis collimation lens 7, and the slow axis collimation lens 7 is coaxially arranged with the semiconductor laser stack 1. The output beam of the semiconductor laser stack 1 is expanded and then enters the slow axis collimating lens 7, so that the collimation of the beam in the slow axis direction of the semiconductor laser stack 1 is realized.
And a detector is arranged behind the beam collimation module, and the beam of the output beam after beam expansion, homogenization and shaping is projected on the detector to form a light spot. The detector may be a spot analyzer, such as a THz spot analyzer. The detector may also be a beam analysis camera. Such as a Dataray beam analysis camera in the united states.
Finally, the shape and the size of the emergent light spot are consistent with those of the semiconductor laser stack light source by adjusting the number of the semiconductor laser stacks 1 and the rotation angle of the semiconductor laser stacks 1 around the slow axis.
First embodiment:
referring to fig. 2, fig. 2 is a schematic diagram illustrating a four-stack 1×4 optical path design of a scalable high-power semiconductor homogenizing device according to the present invention. As shown in FIG. 2, the semiconductor laser stack 1 has a light source bar spacing of 1.8mm, a bar number of 20, a fast axis spot size of 37mm, a fast axis external dimension of 74mm, and a beam expansion of twice. The spacing between the four semiconductor laser stacks 1 is 27.6mm, and is horizontally aligned in the slow axis direction. The external dimensions of the semiconductor laser stack are 310mm x 74mm x 27.6mm as shown in fig. 1 for the scalable high power semiconductor homogeniser; the light source of the semiconductor laser stack 1 is spaced 100mm from the parallel plate 2, and the parallel plate 2 is bent 45 ° toward one side of the plano-convex lens 3; the interval between the parallel flat plate 2 and the plano-convex lens 3 is 160mm; the interval between the plano-convex lens 3 and the plano-concave lens 4 is 63mm; the interval between the plano-concave lens 4 and the plano-convex lens 5 is 119mm; the interval between the plano-convex lens 5 and the plano-concave lens 6 is 67mm; the interval between the plano-concave lens 6 and the slow axis collimating lens 7 is 120mm; the slow axis collimator lens 7 is spaced 550mm from the signal detector 8.
Light path design facula schematic diagram referring to fig. 3, fig. 3 is a schematic diagram of a four-stack 1×4 light path design facula for an expandable high-power semiconductor homogenizing device according to the present invention. As shown in fig. 3, the energy of the spot joint at 550mm is equivalent to the energy of the spot center, and the emergent spot is consistent with the shape of the light source of the semiconductor laser stack 1. At 550mm distance from the working surface, the length of the longitudinal Y is 69.7mm, the length of the transverse X is 102mm, and the effective area is 87.02%, thereby meeting the requirement of high energy flow density.
Fig. 4 is a diagram of the structure of an expandable semiconductor laser stack light source of the expandable high-power semiconductor homogenizing device. The light source structure of the scalable semiconductor laser stack 1 can be referred to in fig. 4.
Second embodiment:
as shown in FIG. 5, FIG. 5 is a schematic diagram of a light path design of a stack of scalable high power semiconductor homogenizers according to the present invention rotated + -5.2 degrees about a slow axis. Light path design drawing referring to fig. 5, the semiconductor laser stack 1 has a light source bar spacing of 1.8mm, a bar number of 20, a fast axis spot size of 37mm, a fast axis external dimension of 74mm, and a beam expansion of twice. The semiconductor laser stack 1 rotates around the slow axis by + -5.2 degrees, and the center-to-center spacing between the light emitting surfaces of the semiconductor laser stack 1 is 140mm. The parameters of the scalable high power semiconductor homogeniser shown are identical to those of example 1, the semiconductor laser stack 1 being not suitable for rotation about the slow axis to be oversized.
Fig. 6 is a schematic diagram of a light path design light spot of a stack of the scalable high power semiconductor homogenizer disclosed in the present invention rotated ±5.2 degrees around the slow axis. Light path design facula schematic diagram referring to fig. 6, the energy of the facula joint at 550mm is equivalent to the energy of the facula center, and the emergent facula is consistent with the appearance of the light source of the semiconductor laser stack 1. At 550mm distance from the working surface, the length of the longitudinal Y is 70mm, the length of the transverse X is 49.6mm, the effective area is 81.57%, and the requirement of high energy flow density is met.
Third embodiment:
fig. 7 is a schematic diagram of a four-stack vertical 2×2 optical path design of an expandable high-power semiconductor homogenizing device according to the present invention. Optical path design referring to fig. 7, the semiconductor laser stack 1 has a light source bar spacing of 1.8mm, a bar number of 20, a fast axis spot size of 37mm, a fast axis external dimension of 74mm, and a beam expansion of twice. The spacing between the two horizontal modules was 27.6mm and the spacing between the vertical modules was 74mm. The parameters of the scalable high power semiconductor homogenizer shown are identical to those of example 1.
Fig. 8 is a schematic diagram of a four-stack 2×2 optical path design light spot of an expandable high-power semiconductor homogenizing device according to the present invention. Light path design facula schematic diagram referring to fig. 8, the energy of the facula joint at 550mm is equivalent to the energy of the facula center, and the emergent facula is consistent with the appearance of the semiconductor laser stack light source 1. At 550mm from the working surface, the Y length is 143.2mm, the X length is 48.3mm, and the effective area is 84.66%, thereby meeting the requirement of high energy flow density.
The invention can control the shape and the size of the far-field light spot by adopting the expandable semiconductor laser stack light source. Furthermore, the parallel flat plate is adopted to deflect the light emitted by the semiconductor laser stack light source to the light path, so that the center of the light spot and the center of the structure are overlapped. Still further, the beam expansion module is used for carrying out beam expansion processing on the laser beam. And adopting a beam collimation module to perform collimation treatment on the laser beam. The shape and the size of far-field light spots and the fluence are controlled by adjusting the number of the semiconductor laser stacks, the horizontal spacing and the vertical spacing of the semiconductor laser stack light sources and the rotation angle of the semiconductor laser stack light sources around the slow axis, so that the expandability of output light beams is realized, and the output light beams meet the requirements of different heating scenes.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. A scalable high-power semiconductor laser homogenizing device is characterized by comprising one or more semiconductor laser stacks, a parallel flat plate, a beam expanding module and a beam collimating module, wherein,
the output light beam of each semiconductor laser stack sequentially passes through a parallel flat plate, a light beam expanding module and a collimation module;
the parallel flat plate is used for overlapping the light spot formed by the semiconductor laser stack with the center of the structure;
the beam expanding module is used for carrying out beam expanding operation on the output beam of the semiconductor laser stack;
the beam collimation module is used for focusing the output beam of the semiconductor laser stack;
in response to the semiconductor laser stacks being more than two, the scalability of the light sources in the horizontal direction, the vertical direction and the various structures can be realized by adjusting the horizontal spacing and the vertical spacing of each semiconductor laser stack and the rotation angle of the semiconductor laser stack around the slow axis.
2. The expandable high-power semiconductor laser homogenizing device of claim 1 wherein the beam expanding module comprises a plano-convex lens and a plano-concave lens, the parallel plate, the plano-convex lens and the plano-concave lens being coaxially arranged.
3. A scalable high power semiconductor laser homogenizing device of claim 2 wherein the parallel plates are disposed obliquely to the output optical path of the semiconductor laser stack.
4. A scalable high power semiconductor laser homogenizing device of claim 2 wherein the beam expansion module is provided with one or more groups.
5. The scalable high-power semiconductor laser homogenizing device of claim 2 wherein the planar side of the plano-convex lens faces the semiconductor laser stack to which the plano-convex lens corresponds.
6. The scalable high power semiconductor laser homogenizing device of claim 2 wherein the concave side of the plano-concave lens faces the semiconductor laser stack to which the plano-concave lens corresponds.
7. The scalable high-power semiconductor laser homogenizing device of claim 1 wherein the beam collimating module comprises a slow axis collimating lens coaxially disposed with the semiconductor laser stack.
8. The expandable high-power semiconductor laser homogenizing device of claim 1 wherein a detector is arranged behind the beam collimation module, and the beam of the output beam after beam expansion, homogenization and shaping is projected on the detector to form a light spot.
9. A scalable high power semiconductor laser homogenizing apparatus of claim 1 wherein the detector is a spot analyzer.
10. A scalable high power semiconductor laser homogenizing apparatus of claim 1 wherein the detector is a beam analysis camera.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410072501.4A CN117872610A (en) | 2024-01-18 | 2024-01-18 | Scalable high-power semiconductor laser homogenizing device |
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| CN202410072501.4A CN117872610A (en) | 2024-01-18 | 2024-01-18 | Scalable high-power semiconductor laser homogenizing device |
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