CN117862147A - Cleaning method of furnace tube equipment and semiconductor process method - Google Patents
Cleaning method of furnace tube equipment and semiconductor process method Download PDFInfo
- Publication number
- CN117862147A CN117862147A CN202410274910.2A CN202410274910A CN117862147A CN 117862147 A CN117862147 A CN 117862147A CN 202410274910 A CN202410274910 A CN 202410274910A CN 117862147 A CN117862147 A CN 117862147A
- Authority
- CN
- China
- Prior art keywords
- reaction cavity
- cleaning
- wafer
- oxide layer
- preset pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 title claims abstract description 91
- 230000008569 process Effects 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 148
- 239000007789 gas Substances 0.000 claims abstract description 72
- 239000000460 chlorine Substances 0.000 claims abstract description 22
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 22
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000012360 testing method Methods 0.000 claims description 36
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- 238000005259 measurement Methods 0.000 claims description 18
- 238000003672 processing method Methods 0.000 claims description 17
- 230000003749 cleanliness Effects 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical group ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- -1 hydrogen ions Chemical class 0.000 abstract description 20
- 229910001415 sodium ion Inorganic materials 0.000 abstract description 9
- 239000001257 hydrogen Substances 0.000 abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 8
- 229910001414 potassium ion Inorganic materials 0.000 abstract description 8
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 238000010926 purge Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 60
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 15
- 239000000463 material Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Abstract
The invention provides a cleaning method and a semiconductor process method of furnace tube equipment, which comprises the following steps of S1: introducing a first cleaning gas into the reaction cavity to clean the reaction cavity, wherein the first cleaning gas is chlorine-containing gas to remove sodium ions, potassium ions and hydrogen ions in the reaction cavity, so that pollution to a subsequent process is avoided; step S2: the pressure in the reaction cavity is at a first preset pressure, and a second cleaning gas is introduced into the reaction cavity; step S3: reducing the pressure in the reaction chamber to a second preset pressure; step S4: the pressure in the reaction cavity is increased to a third preset pressure, and a second cleaning gas is introduced into the reaction cavity, wherein the third preset pressure is smaller than the first preset pressure; step S5: steps S3 and S4 are repeatedly performed to purge the first purge gas in the reaction chamber. In the process of removing the first cleaning gas, the temperature is not required to be raised or lowered, the time consumption is short, the energy consumption can be saved, the chlorine-containing gas in the reaction cavity can be removed, and the uniformity of the product oxide layer on the product wafer is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a cleaning method of furnace tube equipment and a semiconductor process method.
Background
In the integrated circuit manufacturing process, chlorine-containing gas is generally used to clean the reaction chamber of the furnace tube apparatus, but after the furnace tube apparatus is cleaned, chlorine ions in the gas remain in the reaction chamber, and in the process of performing the oxidation process by using the furnace tube apparatus, the residual chlorine ions in the reaction chamber can increase the oxidation rate, so that the thickness of an oxide layer formed on a wafer becomes thicker, thereby affecting the uniformity of the oxide layer.
Disclosure of Invention
The invention aims to provide a cleaning method and a semiconductor process method of furnace tube equipment, which are used for removing chloride ions in a reaction cavity.
In order to solve the above technical problems, the present invention provides a method for cleaning furnace tube equipment, the furnace tube equipment includes a reaction chamber, the method for cleaning furnace tube equipment includes: step S1: introducing a first cleaning gas into the reaction cavity to clean the reaction cavity, wherein the first cleaning gas is chlorine-containing gas; step S2: the pressure in the reaction cavity is enabled to be at a first preset pressure, and a second cleaning gas is introduced into the reaction cavity; step S3: reducing the pressure in the reaction cavity to a second preset pressure; step S4: raising the pressure in the reaction cavity to a third preset pressure and introducing the second cleaning gas into the reaction cavity, wherein the third preset pressure is smaller than the first preset pressure; and, step S5: and repeatedly executing the step S3 and the step S4 to remove the first cleaning gas in the reaction cavity.
Optionally, in the cleaning method of the furnace tube apparatus, the first cleaning gas is hydrogen chloride and/or dichloroethylene.
Optionally, in the method for cleaning furnace tube equipment, the second cleaning gas is nitrogen.
Optionally, in the method for cleaning furnace tube equipment, the step S4 and the step S5 are repeatedly performed for 20-30 times.
Optionally, in the cleaning method of the furnace tube apparatus, the first preset pressure is 750 torr to 760 torr; the second preset pressure is 0.1-0.2 torr; the third preset pressure is 1-2 torr.
Based on the same inventive concept, the invention also provides a semiconductor process method, comprising the following steps: carrying out a product process technology in a reaction cavity of furnace tube equipment; the method for cleaning the furnace tube equipment is adopted to clean the reaction cavity of the furnace tube equipment; providing a wafer of a control wafer and a wafer of a product; placing the wafer into the reaction cavity after cleaning, and executing an oxidation process to form a test oxide layer on the wafer; and measuring the thickness of the test oxide layer, judging whether the cleaning cleanliness in the reaction cavity meets the target requirement according to the measurement result, if so, placing the product wafer in the reaction cavity and performing an oxidation process on the product wafer to form a product oxide layer on the product wafer.
Optionally, in the semiconductor processing method, the method for measuring the thickness of the test oxide layer includes: presetting a plurality of measuring points on the surface of the test oxide layer; obtaining thickness values of all the measuring points to obtain the maximum thickness value and the minimum thickness value in all the measuring points; and obtaining a difference value between the maximum thickness value and the minimum thickness value, and judging whether the cleaning cleanliness in the reaction cavity meets the target requirement or not according to the difference value.
Optionally, in the semiconductor processing method, the thickness of the test oxide layer is measured by an optical measuring instrument.
Optionally, in the semiconductor processing method, a material of the wafer of the control wafer is the same as a material of the wafer of the product.
Optionally, in the semiconductor processing method, the material of the test oxide layer and the material of the product oxide layer are both silicon oxide.
In the cleaning method of furnace tube equipment provided by the invention, the cleaning method comprises the following steps of S1: introducing a first cleaning gas into the reaction cavity to clean the reaction cavity, wherein the first cleaning gas is chlorine-containing gas to remove sodium ions, potassium ions and hydrogen ions in the reaction cavity, so that pollution to a subsequent process is avoided; step S2: the pressure in the reaction cavity is enabled to be at a first preset pressure, and a second cleaning gas is introduced into the reaction cavity; step S3: reducing the pressure in the reaction cavity to a second preset pressure; step S4: raising the pressure in the reaction cavity to a third preset pressure and introducing the second cleaning gas into the reaction cavity, wherein the third preset pressure is smaller than the first preset pressure; and, step S5: and repeatedly executing the step S3 and the step S4 to remove the first cleaning gas in the reaction cavity. In the process of removing the first cleaning gas in the reaction cavity, the temperature is not required to be raised or lowered, the time consumption is short, the energy consumption can be saved, and after the sodium ions, the potassium ions and the hydrogen ions in the reaction cavity are removed by utilizing the first cleaning gas, the first cleaning gas in the reaction cavity can be removed, so that the chlorine-containing gas in the reaction cavity is removed.
In the semiconductor process method, the reaction cavity of the furnace tube equipment is cleaned by a cleaning method of the furnace tube equipment, so that chloride ions in the reaction cavity can be removed, the influence of the chloride ions in the reaction cavity on a subsequent oxidation process is avoided, and the uniformity of a product oxide layer formed on a product wafer is improved.
Drawings
FIG. 1 is a schematic flow chart of a method for cleaning furnace tube equipment according to an embodiment of the present invention.
Fig. 2 is a schematic flow chart of a semiconductor processing method according to an embodiment of the invention.
Fig. 3 is a top view of a wafer for a wafer control wafer in a semiconductor processing method according to an embodiment of the present invention.
Fig. 4 is a top view of a semiconductor process according to an embodiment of the present invention after forming a test oxide layer.
Fig. 5 is a schematic cross-sectional view of a product wafer in a semiconductor processing method according to an embodiment of the present invention.
Fig. 6 is a schematic diagram of thickness of each measurement point of the surface of the test oxide layer in the semiconductor processing method according to the embodiment of the invention.
Wherein reference numerals are as follows: 100-a wafer of a control wafer; 110-testing the oxide layer; 110 a-measurement points; 200-product wafers; 210-product oxide layer.
Detailed Description
The cleaning method and the semiconductor process method of the furnace tube equipment provided by the invention are further described in detail below with reference to the accompanying drawings and the specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
FIG. 1 is a schematic flow chart of a method for cleaning furnace tube equipment according to an embodiment of the invention. As shown in fig. 1, the present embodiment provides a method for cleaning a furnace apparatus, where the furnace apparatus includes a reaction chamber, and the method for cleaning a furnace apparatus includes: step S1: introducing a first cleaning gas into the reaction cavity to clean the reaction cavity, wherein the first cleaning gas is chlorine-containing gas; step S2: the pressure in the reaction cavity is enabled to be at a first preset pressure, and a second cleaning gas is introduced into the reaction cavity; step S3: reducing the pressure in the reaction chamber to a second preset pressure; step S4: the pressure in the reaction cavity is increased to a third preset pressure, and the second cleaning gas is introduced into the reaction cavity, wherein the third preset pressure is smaller than the first preset pressure; and, step S5: and repeatedly executing the step S3 and the step S4 to remove the first cleaning gas in the reaction cavity.
Hereinafter, a cleaning method of the furnace tube apparatus provided in this embodiment will be described in more detail.
In step S1, a first cleaning gas is introduced into the reaction chamber to clean the reaction chamber, where the first cleaning gas is a chlorine-containing gas. Wherein the reaction chamber is, for example, a quartz reaction chamber.
In this embodiment, the first cleaning gas is hydrogen chloride and/or dichloroethylene, and sodium ions (na+), potassium ions (k+) and hydrogen ions (h+), which are generated on the inner wall of the reaction chamber, are removed by introducing the first cleaning gas into the reaction chamber, so that pollution to the subsequent process is avoided. After the first cleaning gas is introduced into the reaction cavity, the first cleaning gas reacts with sodium ions (Na+), potassium ions (K+) and hydrogen ions (H+) on the inner wall of the reaction cavity and then is discharged out of the reaction cavity, so that the reaction cavity is cleaned.
Then, step S2 is executed to make the pressure in the reaction chamber be at a first preset pressure and to introduce a second cleaning gas into the reaction chamber. Specifically, the second cleaning gas may be nitrogen.
Since the first cleaning gas used in the foregoing steps includes chlorine ions, the first cleaning gas remains in the reaction chamber after the reaction chamber is cleaned, and thus, chlorine ions remain on the inner wall of the reaction chamber after the reaction chamber is cleaned. The second cleaning gas is introduced into the reaction cavity to clean the chlorine ions in the reaction cavity, and the chlorine ions in the reaction cavity are driven to be discharged out of the reaction cavity by the second cleaning gas.
In this embodiment, the first preset pressure is 750 torr to 760 torr, for example 760 torr, that is, the pressure in the reaction chamber may be at the standard atmospheric pressure.
Then, step S3 is performed to reduce the pressure in the reaction chamber to a second preset pressure. Wherein, the reaction cavity can be pumped by a vacuum pump (or a sucking pump), so that the pressure in the reaction cavity is reduced to a second preset pressure. In this way, the second purge gas and the first purge gas in the reaction chamber can be exhausted, that is, the chlorine ions and the nitrogen ions in the reaction chamber can be exhausted. The second preset pressure may be 0.1 torr to 0.2 torr, for example, 0.1 torr, 0.15 torr, or 0.2 torr.
And then, executing step S4, namely, increasing the pressure in the reaction cavity to a third preset pressure, and introducing the second cleaning gas into the reaction cavity, namely, introducing nitrogen into the reaction cavity again to clean chloride ions in the reaction cavity. And the pressure in the reaction chamber is increased to a third preset pressure, and then chlorine ions and nitrogen ions in the reaction chamber can be discharged by repeatedly executing the step S3 and the step S4. The third preset pressure is smaller than the first preset pressure, the third preset pressure is larger than the second preset pressure, and the third preset pressure can be 1-2 torr, for example.
And then, executing step S5, and repeatedly executing step S3 and step S4 to remove the first cleaning gas in the reaction cavity, namely taking the step S3 and the step S4 as a cycle, and repeatedly executing, so as to discharge the first cleaning gas in the reaction cavity, namely chloride ions, and avoiding residual chloride ions in the reaction cavity. The number of times of repeating the step S4 and the step S5 is 20 times to 30 times, for example, may be 20 times.
On the one hand, the more the number of cleaning cycles is, and the cleaning effect can be effectively increased. On the other hand, the pressure in the reaction chamber can be periodically changed, so that the air flow in the reaction chamber is unstable, chloride ions in the reaction chamber are more easily brought out of the reaction chamber by the second cleaning gas under the action of the suction force of the vacuum pump, and the cleaning is more thorough. In addition, in step S5, there is no need to raise or lower the temperature, the time consumption is short, and the energy consumption can be saved, and the chlorine-containing gas in the reaction chamber can be purged.
In one embodiment, the method for cleaning a furnace tube apparatus is applied to cleaning a silicon oxide furnace tube, and the furnace tube apparatus may be a quartz tube.
In one embodiment, the cleaning method of the furnace tube apparatus may be to perform a cleaning after the furnace tube finishes depositing the product oxide layer (for example, silicon oxide layer) of a certain number of product wafers, and continue to use the reaction chamber of the furnace tube apparatus to deposit the silicon oxide layer after the cleaning is completed.
In summary, in the cleaning method and the semiconductor process method for furnace tube equipment provided by the present invention, the steps S1 are as follows: introducing a first cleaning gas into the reaction cavity to clean the reaction cavity, wherein the first cleaning gas is chlorine-containing gas to remove sodium ions, potassium ions and hydrogen ions in the reaction cavity, so that pollution to a subsequent process is avoided; step S2: the pressure in the reaction cavity is enabled to be at a first preset pressure, and a second cleaning gas is introduced into the reaction cavity; step S3: reducing the pressure in the reaction cavity to a second preset pressure; step S4: raising the pressure in the reaction cavity to a third preset pressure and introducing the second cleaning gas into the reaction cavity, wherein the third preset pressure is smaller than the first preset pressure; and, step S5: and repeatedly executing the step S3 and the step S4 to remove the first cleaning gas in the reaction cavity. In the process of removing the first cleaning gas, the temperature is not required to be increased or decreased, the time consumption is short, the energy consumption can be saved, and the chlorine-containing gas in the reaction cavity can be removed.
Fig. 2 is a schematic flow chart of a semiconductor processing method according to an embodiment of the invention. As shown in fig. 2, the present embodiment provides a semiconductor processing method, which includes: step S10: carrying out a product process technology in a reaction cavity of furnace tube equipment; step S20: cleaning a reaction cavity of furnace tube equipment by adopting a cleaning method of the furnace tube equipment; step S30: providing a wafer of a control wafer and a wafer of a product; step S40: placing the wafer into the reaction cavity after cleaning, and executing an oxidation process to form a test oxide layer on the wafer; step S50: and measuring the thickness of the test oxide layer, judging whether the cleaning cleanliness in the reaction cavity meets the target requirement according to the measurement result, if so, placing the product wafer in the reaction cavity and performing an oxidation process on the product wafer to form a product oxide layer on the product wafer.
Fig. 3 is a top view of a wafer for a wafer control wafer in a semiconductor processing method according to an embodiment of the present invention. Fig. 4 is a top view of a semiconductor process according to an embodiment of the present invention after forming a test oxide layer. Fig. 5 is a schematic cross-sectional view of a product wafer in a semiconductor processing method according to an embodiment of the present invention. The semiconductor processing method provided in this embodiment will be described in more detail with reference to fig. 3 to 5.
Firstly, step S10 is executed to perform a product process in the reaction chamber of the furnace apparatus. The product process is, for example, an oxidation process.
Next, step S20 is executed, and the cleaning method for the furnace tube apparatus provided in this embodiment is used to clean the reaction chamber of the furnace tube apparatus. After the product process is performed, sodium ions (na+), potassium ions (k+) and hydrogen ions (h+), which may contaminate the product wafer or a film layer formed on the product wafer, may remain on the inner wall of the reaction chamber, so that the reaction chamber of the furnace tube apparatus is cleaned to remove sodium ions (na+), potassium ions (k+) and hydrogen ions (h+), and the first cleaning gas (including chloride ions) is removed, and a specific cleaning method of the furnace tube apparatus is not described herein.
Next, as shown in fig. 3, step S30 is performed to provide a wafer 100 and a product wafer 200. The material of the product wafer 200 is the same as that of the wafer 100, for example, the wafer 100 and the product wafer 200 may be silicon. The wafer 100 may, for example, comprise a bare silicon wafer, and the wafer 100 is used for testing whether the cleaning cleanliness in the reaction chamber meets the target requirement, i.e. testing whether the residual chlorine ions in the chamber meet the target requirement.
Next, as shown in fig. 4, step S40 is performed, the wafer 100 is placed in the reaction chamber after cleaning, and an oxidation process is performed to form a test oxide layer 110 on the wafer 100. Wherein, a wafer boat is disposed in the reaction chamber, and the wafer 100 can be placed on the wafer boat.
Next, with continued reference to fig. 5, step S50 is performed to measure the thickness of the test oxide layer 110, and determine whether the cleaning cleanliness in the reaction chamber meets the target requirement according to the measurement result, if yes, the product wafer 200 is placed in the reaction chamber and an oxidation process is performed on the product wafer 200, so as to form a product oxide layer 210 on the product wafer 200. If not, the cleaning method of the furnace tube equipment provided by the embodiment can be continuously adopted to clean the reaction cavity until the target requirement is met.
In this embodiment, the method for measuring the thickness of the test oxide layer 110 includes: firstly, a plurality of measurement points 110a are preset on the surface of the test oxide layer 110, the plurality of measurement points 110a may be uniformly distributed on the surface of the test oxide layer 110, further, the number of the plurality of measurement points 110a may be, for example, 49, and all the measurement points 110a may be symmetrically distributed.
Then, the thickness values of all the measurement points 110a are obtained to obtain all the measurement points110a, the thickness of the test oxide layer 110 may be measured by an optical gauge. And then, obtaining a difference value between the maximum thickness value and the minimum thickness value, and judging whether the cleaning cleanliness in the reaction cavity meets the target requirement or not according to the difference value. The difference between the maximum thickness value and the minimum thickness value may reflect the uniformity of the test oxide layer 110, so as to determine whether the cleaning cleanliness in the reaction chamber meets the target requirement according to the uniformity of the test oxide layer 110. Specifically, if chloride ions (such as hydrogen chloride and/or dichloroethylene) remain in the reaction chamber, or the residual chloride ions exceed the target requirements. In oxidation processes, e.g. incorporating chloride ions (e.g. hydrogen chloride and/or dichloroethylene) into the oxidizing gas, H-containing species are formed 2 The reactant of O, thereby accelerating oxidation; on the other hand, the residual chloride ions in the reaction chamber accumulate between the interface of the wafer and the formed test oxide layer, and react with silicon in the wafer to form chlorosilicide, which has poor stability and is easily converted into silicon oxide (SiO) 2 ) Thus, the chloride ions may catalyze the reaction of oxygen with silicon, thereby increasing the oxidation rate in the oxidation process, increasing the thickness of the formed test oxide layer 110, and affecting the uniformity of the formed test oxide layer 110.
In this embodiment, whether the cleaning cleanliness in the reaction chamber reaches the target requirement can be determined by the difference between the maximum thickness value and the minimum thickness value in all the measurement points 110a, if the difference between the maximum thickness value and the minimum thickness value is equal to the preset threshold, indicating that the cleaning cleanliness in the reaction chamber reaches the target requirement, the product wafer 200 is placed in the reaction chamber and an oxidation process is performed on the product wafer 200 to form the product oxide layer 210 on the product wafer 200. Avoiding the influence of chlorine ions in the reaction chamber on the subsequent oxidation process and improving the uniformity of the product oxide layer 210 formed on the product wafer 200. The preset threshold value may be 0.6 angstrom to 0.8 angstrom.
Fig. 6 is a schematic diagram of thickness of each measurement point of the surface of the test oxide layer in the semiconductor processing method according to the embodiment of the invention. The abscissa in fig. 6 represents each measurement point of the surface of the test oxide layer, and the ordinate represents the thickness of each measurement point of the surface of the test oxide layer in angstroms. As shown in fig. 6, a curve a, b, c, d, e represents the thickness of each measurement point of the surface of the test oxide layer on different wafer, for example, the difference between the maximum thickness value and the minimum thickness value of the measurement point in the curve a is equal to a preset threshold, which indicates that the cleaning cleanliness in the reaction chamber reaches the target requirement.
In this embodiment, the material of the product oxide layer 210 is the same as that of the test oxide layer 110, and may be, for example, silicon oxide.
In summary, in the semiconductor process method provided by the embodiment of the invention, the reaction cavity of the furnace tube equipment is cleaned by the cleaning method of the furnace tube equipment, so that chloride ions in the reaction cavity can be removed, the influence of the chloride ions in the reaction cavity on the subsequent oxidation process is avoided, and the uniformity of the product oxide layer formed on the product wafer is improved.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (10)
1. The cleaning method of the furnace tube equipment comprises a reaction cavity, and is characterized by comprising the following steps:
step S1: introducing a first cleaning gas into the reaction cavity to clean the reaction cavity, wherein the first cleaning gas is chlorine-containing gas;
step S2: the pressure in the reaction cavity is enabled to be at a first preset pressure, and a second cleaning gas is introduced into the reaction cavity;
step S3: reducing the pressure in the reaction chamber to a second preset pressure;
step S4: the pressure in the reaction cavity is increased to a third preset pressure, and the second cleaning gas is introduced into the reaction cavity, wherein the third preset pressure is smaller than the first preset pressure;
step S5: and repeatedly executing the step S3 and the step S4 to remove the first cleaning gas in the reaction cavity.
2. The method for cleaning furnace tube apparatus according to claim 1, wherein the first cleaning gas is hydrogen chloride and/or dichloroethylene.
3. The method for cleaning furnace equipment according to claim 1, wherein the second cleaning gas is nitrogen.
4. The method for cleaning furnace tube equipment according to claim 1, wherein the step S4 and the step S5 are repeatedly performed 20 to 30 times.
5. The method for cleaning furnace tube equipment according to claim 1, wherein the first preset pressure is 750 torr to 760 torr; the second preset pressure is 0.1-0.2 torr; the third preset pressure is 1-2 torr.
6. A semiconductor processing method, comprising:
carrying out a product process technology in a reaction cavity of furnace tube equipment;
cleaning a reaction chamber of the furnace tube apparatus by using the cleaning method of the furnace tube apparatus as set forth in any one of claims 1 to 5;
providing a wafer of a control wafer and a wafer of a product;
placing the wafer into the reaction cavity after cleaning, and executing an oxidation process to form a test oxide layer on the wafer;
and measuring the thickness of the test oxide layer, judging whether the cleaning cleanliness in the reaction cavity meets the target requirement according to the measurement result, if so, placing the product wafer in the reaction cavity and performing an oxidation process on the product wafer to form a product oxide layer on the product wafer.
7. The semiconductor process of claim 6, wherein measuring the thickness of the test oxide layer comprises:
presetting a plurality of measuring points on the surface of the test oxide layer;
obtaining thickness values of all the measuring points to obtain the maximum thickness value and the minimum thickness value in all the measuring points;
and obtaining a difference value between the maximum thickness value and the minimum thickness value, and judging whether the cleaning cleanliness in the reaction cavity meets the target requirement or not according to the difference value.
8. The semiconductor processing method of claim 7, wherein the thickness of the test oxide layer is measured by an optical gauge.
9. The semiconductor processing method of claim 6, wherein the wafer is the same as the product wafer.
10. The semiconductor process of claim 9, wherein the test oxide layer and the product oxide layer are both silicon oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410274910.2A CN117862147B (en) | 2024-03-12 | Cleaning method of furnace tube equipment and semiconductor process method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410274910.2A CN117862147B (en) | 2024-03-12 | Cleaning method of furnace tube equipment and semiconductor process method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117862147A true CN117862147A (en) | 2024-04-12 |
| CN117862147B CN117862147B (en) | 2024-05-17 |
Family
ID=
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5721176A (en) * | 1992-05-29 | 1998-02-24 | Olin Corporation | Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates |
| CN1215764A (en) * | 1997-10-29 | 1999-05-05 | 三星电子株式会社 | Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method |
| CN104259153A (en) * | 2014-07-24 | 2015-01-07 | 上海华力微电子有限公司 | Furnace tube cleaning process |
| US20230022685A1 (en) * | 2020-06-17 | 2023-01-26 | Nero Endüstri Savunma Sanayi Anonim Sirketi | Pressure decontamination system providing fast cleaning against cbrn threats suitable for use in military vehicles and infrastructures |
| CN117339946A (en) * | 2022-06-28 | 2024-01-05 | 长鑫存储技术有限公司 | Process equipment cleaning method |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5721176A (en) * | 1992-05-29 | 1998-02-24 | Olin Corporation | Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates |
| CN1215764A (en) * | 1997-10-29 | 1999-05-05 | 三星电子株式会社 | Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method |
| CN104259153A (en) * | 2014-07-24 | 2015-01-07 | 上海华力微电子有限公司 | Furnace tube cleaning process |
| US20230022685A1 (en) * | 2020-06-17 | 2023-01-26 | Nero Endüstri Savunma Sanayi Anonim Sirketi | Pressure decontamination system providing fast cleaning against cbrn threats suitable for use in military vehicles and infrastructures |
| CN117339946A (en) * | 2022-06-28 | 2024-01-05 | 长鑫存储技术有限公司 | Process equipment cleaning method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4005229B2 (en) | Chemical vapor deposition apparatus for semiconductor device manufacturing and cleaning method thereof | |
| US5968279A (en) | Method of cleaning wafer substrates | |
| US7938080B2 (en) | Method for using film formation apparatus | |
| US5221414A (en) | Process and system for stabilizing layer deposition and etch rates while simultaneously maintaining cleanliness in a water processing reaction chamber | |
| JP6242933B2 (en) | Substrate processing apparatus, semiconductor device manufacturing method, and program | |
| JP2008218984A (en) | Semiconductor device manufacturing method and substrate processing apparatus | |
| JPS6352118B2 (en) | ||
| TWI660472B (en) | Substrate processing device, method for manufacturing semiconductor device, and recording medium | |
| US8536699B2 (en) | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus | |
| CN117862147B (en) | Cleaning method of furnace tube equipment and semiconductor process method | |
| CN117862147A (en) | Cleaning method of furnace tube equipment and semiconductor process method | |
| JP2000100799A (en) | Formation of metal wiring of semiconductor element and system thereof | |
| US6649537B1 (en) | Intermittent pulsed oxidation process | |
| US5023206A (en) | Semiconductor device with adjacent non-oxide layers and the fabrication thereof | |
| CN114864442A (en) | Semiconductor processing equipment and processing method thereof | |
| JP2889191B2 (en) | Dry etching method | |
| US20060137711A1 (en) | Single-wafer cleaning procedure | |
| CN106840820B (en) | CVD film and etching treatment method thereof | |
| CN113223915B (en) | Method for reducing molybdenum content after chamber maintenance | |
| CN115132570B (en) | Processing method and device for semiconductor structure | |
| WO1998001894A1 (en) | Method of manufacturing semiconductor integrated circuit device | |
| TWI833930B (en) | Dry etching method and semiconductor device manufacturing method | |
| KR20090045736A (en) | Manufacturing method and cluster system for epitaxial wafer | |
| KR100588217B1 (en) | Method for forming gate oxide in semiconductor device | |
| EP1178527A2 (en) | Method for removing silicon carbide from a substrate surface after oxidation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |