CN117854992A - Solid state relay - Google Patents

Solid state relay Download PDF

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Publication number
CN117854992A
CN117854992A CN202211209825.5A CN202211209825A CN117854992A CN 117854992 A CN117854992 A CN 117854992A CN 202211209825 A CN202211209825 A CN 202211209825A CN 117854992 A CN117854992 A CN 117854992A
Authority
CN
China
Prior art keywords
connection block
circuit board
solid state
state relay
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211209825.5A
Other languages
Chinese (zh)
Inventor
陈建文
简裔琪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chewang Electronics Ningbo Co ltd
Original Assignee
Chewang Electronics Ningbo Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chewang Electronics Ningbo Co ltd filed Critical Chewang Electronics Ningbo Co ltd
Priority to CN202211209825.5A priority Critical patent/CN117854992A/en
Publication of CN117854992A publication Critical patent/CN117854992A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H50/00—Details of electromagnetic relays
    • H01H50/14—Terminal arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H50/00—Details of electromagnetic relays
    • H01H50/12—Ventilating; Cooling; Heating
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electronic Switches (AREA)

Abstract

The solid state relay comprises a first terminal, a plurality of metal oxide semiconductor chips, a second terminal and a control circuit board, wherein the first terminal is used for receiving current signals and is made of metal materials and provided with a first connecting block; each metal oxide semiconductor chip is electrically connected with the first connecting block, and the bottom surface of each metal oxide semiconductor chip is in direct contact with the upper surface of the first connecting block; the second terminal is made of metal material and is provided with a second connection block which is electrically connected with each metal oxide semiconductor chip and is positioned right above the first connection block; the control circuit board is electrically connected with the gate electrode of each metal oxide semiconductor transistor chip and is positioned right above the first connection block.

Description

Solid state relay
Technical Field
The present invention relates to solid state relays; in particular to a solid-state relay with better heat dissipation function.
Background
The known electronic solid state relay comprises an input end, an output end and a power element, wherein the power element is used for controlling the conduction between the input end and the output end, and after a signal is input by the input end, the power element can be used for conducting the output end and the input end, so that current can be output.
Most of the existing power devices are disposed on a copper/aluminum substrate and connected to the input end and the output end by wire bonding, and the heat dissipation performance of the insulating board below the power devices is poor, so that the heat energy generated during the operation of the power devices cannot be effectively discharged, and further the problem that the power devices cannot operate normally due to too high temperature is easily caused, and therefore, the existing solid state relay still needs to be improved.
Disclosure of Invention
Therefore, the present invention is directed to a solid state relay with better heat dissipation function.
The solid state relay provided by the invention comprises a first terminal, a plurality of metal oxide semiconductor transistor chips, a second terminal and a control circuit board, wherein the first terminal is used for receiving current signals, and is made of metal materials and provided with a first connecting block; each metal oxide semiconductor chip is electrically connected with the first connecting block, and the bottom surface of each metal oxide semiconductor chip is in direct contact with the upper surface of the first connecting block; the second terminal is made of metal material and is provided with a second connection block which is electrically connected with each metal oxide semiconductor chip and is positioned right above the first connection block; the control circuit board is electrically connected with each metal oxide semiconductor chip and is positioned right above the first connecting block.
The invention has the advantages that the first terminal is made of metal, and the bottom surface of each metal-oxide-semiconductor transistor chip is directly contacted with the upper surface of the first connecting block, so that the heat energy generated by each metal-oxide-semiconductor transistor chip during operation can be directly transferred to the first connecting block to achieve the effect of cooling.
Drawings
Fig. 1 is a perspective view of a solid state relay according to a first preferred embodiment of the present invention.
Fig. 2 is a partially exploded view of the solid state relay of the first preferred embodiment described above.
Fig. 3 is a top view of a portion of the component of fig. 2.
Fig. 4 is a cross-sectional view taken along the direction 4-4 of fig. 3.
Fig. 5 is a perspective view of a solid state relay according to a second preferred embodiment of the present invention.
Fig. 6 is a partially exploded view of the solid state relay of the second preferred embodiment described above.
Fig. 7 is an exploded view of a portion of the components of fig. 6.
Fig. 8 is a top view of a portion of the component of fig. 7.
Fig. 9 is a sectional view taken along the direction 9-9 of fig. 8.
Detailed Description
In order to more clearly illustrate the present invention, preferred embodiments are described in detail below with reference to the accompanying drawings. Referring to fig. 1 to 4, a solid state relay 1 according to a first preferred embodiment of the present invention includes a first terminal 10, a plurality of mos transistor chips 20, a second terminal 30, a heat conductive insulating board 40 and a control circuit board 50, wherein the first terminal 10 is configured to receive a current signal, the second terminal 30 is configured to output a current signal, the control circuit board 50 is configured to output an electrical signal to the mos transistor chips 20 to control a current path between the first terminal 10 and the second terminal 30 to be on or off, and the control circuit board 50 may be a PCB board.
The first terminal 10 is made of a conductive metal material and has a first connection block 101, the second terminal 30 is made of a conductive metal material and has a second connection block 301, the control circuit board 50, the second connection block 301 and the mos transistors 20 are all disposed directly above the first connection block 101, and as shown in fig. 3, the second connection block 301 and the control circuit board 50 are disposed adjacent to each other, and the mos transistors 20 are disposed between the second connection block 301 and the control circuit board 50.
Referring to fig. 4, the first connection block 101 has an upper surface 101a facing upward, and the bottom surfaces of the control circuit board 50, the mos chips 20 and the heat conductive insulating board 40 are in direct contact with the upper surface 101a of the first connection block 101, and the first terminals 10 are made of metal materials, so that the heat energy generated by the control circuit board 50 and the mos chips 20 during operation can be directly transferred to the first connection block 101 to achieve the heat dissipation and cooling effects by directly contacting the bottom surfaces of the control circuit board 50 and the mos chips 20 with the upper surface 101a of the first connection block 101.
With reference to fig. 4, the heat-conducting insulating plate 40 is located between the first connection block 101 and the second connection block 301, and the top surface and the bottom surface of the heat-conducting insulating plate 40 are respectively contacted and attached to the bottom surface of the second connection block 301 and the upper surface 101a of the first connection block 101, that is, the first connection block 101, the heat-conducting insulating plate 40 and the second connection block 301 are sequentially arranged in a stacked manner, so as to separate the first connection block 101 from the second connection block 301 through the heat-conducting insulating plate 40.
Referring to fig. 3 and fig. 4, the source electrode of each mos transistor chip 20 is electrically connected to the second connection block 301 by wire bonding, in other embodiments, the source electrode of each mos transistor chip 20 may also be electrically connected to the second connection block 301 by sheet metal welding, in this embodiment, the source electrode of each mos transistor chip 20 is electrically connected to the second connection block 301 by a plurality of metal wires, and the second connection block 301 is electrically connected to the control circuit board 50 to output a source signal to the control circuit board 50; the drain of each mos transistor 20 is electrically connected to the first connection block 101, in this embodiment, the drain of each mos transistor 20 is located at the bottom of each mos transistor 20 and is electrically connected to the first terminal 10 by being in direct contact with the upper surface, for example, each mos transistor 20 may be connected to the upper surface of the first connection block 101 by Reflow (Reflow), thereby greatly reducing the resistance of the current path; the gate of each of the mos transistor chips 20 is electrically connected to the control circuit board 50 by wire bonding.
In this embodiment, the first connection block 101 and the second connection block 301 are both flat, the area of the first connection block 101 is larger than the area of the second connection block 301, and the first connection block 101 and the second connection block 301 are parallel to each other.
In addition, in the present embodiment, the first terminal 10 has a first bending section 102, one end of the first bending section 102 is connected to one side of the first connecting block 101, the other end extends away from and perpendicular to the upper surface 101a of the first connecting block 101, the second terminal 30 has a second bending section 302, one end of the second bending section 302 is connected to one side of the second connecting block 301, the other end extends away from and perpendicular to the upper surface of the second connecting block 301, and the first bending section 102 and the second bending section 302 can be electrically connected to an external terminal in a locking manner by a fastener such as a nut as shown in fig. 2.
Referring to fig. 5 to 9, as a solid state relay 2 according to a second preferred embodiment of the present invention, the solid state relay 2 has substantially the same structure as the solid state relay 1 according to the first preferred embodiment, and includes the first terminal 10, the plurality of mos transistor chips 20, the second terminal 30, the heat conductive insulating board 40 and the control circuit board 50, wherein the bottom surface of each mos transistor chip 20 is in direct contact with the upper surface 101a of the first connection block 101, and each mos transistor chip 20, the control circuit board 50 and the second connection block 301 are located directly above the first connection block 101; the difference is that in the second preferred embodiment, the solid state relay 2 further comprises a gate line board 60, a heat conducting insulating sheet 70 and a heat sink 80, and the control circuit board 50 has different setting positions, and the gate line board 60 may be a PCB board.
Referring to fig. 9, the heat sink 80, the heat conducting insulating sheet 70, the first connecting block 101, the heat conducting insulating sheet 40, the second connecting block 301, the gate circuit board 60 and the control circuit board 50 are sequentially stacked from bottom to top, the heat conducting insulating sheet 70 is disposed between the first connecting block 101 and the heat sink 80, the heat conducting insulating sheet 70 is respectively in contact with and attached to the lower surface of the first connecting block 101 and the upper surface of the heat sink 80, the gate circuit board 60 is disposed on the upper surface 101a of the second connecting block 301, the control circuit board 50 is electrically connected with the gate circuit board 60 through a wire 601 (fig. 7), and the gate circuit board 60 is electrically connected with the gates of the mos transistor chips 20 through the control circuit board 50, wherein the gate circuit board 60 is electrically connected with the gates of the mos transistor chips 20 through wire bonding, and the heat sink 70, the heat conducting sheet 40, the heat conducting insulating sheet 101, the heat conducting insulating sheet 50 and the solid-state relay circuit board 50 can be integrally stacked to achieve the effect of reducing the size of the solid-state relay circuit board 50.
In other embodiments, each of the mos transistor chips 20 is disposed adjacent to the second connection block 301 and on the left and right sides of the second connection block 301, and in other embodiments, each of the mos transistor chips may be disposed on the same side of the second connection block 301.
In this embodiment, the first terminal 10 has a first extension 104, one end of the first extension 104 is connected to the first bending section 102, the second terminal 30 has a second extension 304, one end of the second extension 304 is connected to the second bending section 302, and the first extension 104 and the second extension 304 can be electrically connected to an external terminal in a locking manner by a fastener such as a nut, as shown in fig. 6 and 7.
In addition, in the present embodiment, the solid-state relay 2 includes two connection terminals, one of the two connection terminals 90 is electrically connected to the first terminal 10 and the control circuit board 50, and the other of the two connection terminals 90 is electrically connected to the second terminal 30 and the control circuit board 50, so as to monitor the voltages of the first terminal 10 and the second terminal 30.
In this embodiment, the two connection terminals 90 are respectively disposed at opposite angles of the control circuit board 50, one end of each of the two connection terminals 90 is connected to the control circuit board 50, and the other end is respectively connected to the first terminal 10 and the second terminal 30 by means of screw locking, so that the control circuit board 50 is disposed at a position above the first connection block 101 and the second connection block 301.
In summary, since the first terminal of the solid-state relay of the present invention is made of metal, the thermal energy generated by each mos transistor chip during operation can be directly transferred to the first connection block to achieve the cooling effect by directly contacting the bottom surface of each mos transistor chip with the upper surface of the first connection block of the first terminal.
The above description is only of the preferred embodiments of the present invention, and all equivalent changes in the specification and claims should be construed to be included in the scope of the present invention.
Description of the reference numerals
[ invention ]
1,2: solid state relay
10: first terminal
101: first connection block
101a: upper surface of
102 first bending section
104: first extension section
20: metal oxide semiconductor chip
30: second terminal
301: second connection block
302: second bending section
304: second extension section
40: heat conduction insulating board
50: control circuit board
60: gate circuit board
601: conducting wire
70: heat conduction insulating sheet
80: heat sink
90: and a connection terminal.

Claims (10)

1. A solid state relay comprising:
a first terminal for receiving a current signal, the first terminal being made of a metal material and having a first connection block;
a plurality of metal oxide semiconductor chips, wherein each metal oxide semiconductor chip is electrically connected with the first connection block, and the bottom surface of each metal oxide semiconductor chip is directly contacted with the upper surface of the first connection block;
a second terminal for outputting current signals, wherein the second terminal is made of metal material and is provided with a second connection block electrically connected with each MOS transistor chip, and the second connection block is positioned right above the first connection block; and
and the control circuit board is electrically connected with the gate electrode of each metal oxide semiconductor transistor chip and is positioned right above the first connecting block.
2. The solid state relay of claim 1, wherein the upper surface of the first connection block faces upwards, and the drain of each mos transistor is located at the bottom of each mos transistor and is in direct contact with the upper surface for electrical connection.
3. The solid state relay of claim 1, wherein the first connection block and the second connection block are both flat plates, and the first connection block and the second connection block are disposed in parallel with each other.
4. The solid state relay of claim 2, wherein a bottom surface of the control circuit board is in contact with the upper surface.
5. The solid state relay of claim 2, wherein a thermally conductive insulating plate is located between the first connection block and the second connection block, the top and bottom surfaces of the thermally conductive insulating plate being in contact with the bottom surface of the second connection block and the upper surface of the first connection block, respectively.
6. The solid state relay of claim 1, wherein the second connection block is electrically connected to the source of each mos transistor die by wire bonding or sheet metal bonding, and the control circuit board is electrically connected to the gate of each mos transistor die by wire bonding.
7. The solid state relay of claim 1, wherein the solid state relay comprises a gate circuit board, the first connection block, the second connection block, the gate circuit board and the control circuit board are sequentially stacked and arranged, and the control circuit board is electrically connected with the gate of each of the mos transistors through the gate circuit board.
8. The solid state relay of claim 7, wherein the gate circuit board is disposed on an upper surface of the second connection block.
9. The solid state relay of claim 1, comprising a thermally conductive insulating sheet and a heat sink, the thermally conductive insulating sheet being disposed between the first connection block and the heat sink, and the thermally conductive insulating sheet being in contact with a lower surface of the first connection block and an upper surface of the heat sink, respectively.
10. The solid state relay of claim 1, wherein the first terminal has a first bending section, one end of the first bending section is connected to one side of the first connection block, the other end extends away from and perpendicular to the upper surface of the first connection block, the second terminal has a second bending section, one end of the second bending section is connected to one side of the second connection block, and the other end extends away from and perpendicular to the upper surface of the second connection block.
CN202211209825.5A 2022-09-30 2022-09-30 Solid state relay Pending CN117854992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211209825.5A CN117854992A (en) 2022-09-30 2022-09-30 Solid state relay

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211209825.5A CN117854992A (en) 2022-09-30 2022-09-30 Solid state relay

Publications (1)

Publication Number Publication Date
CN117854992A true CN117854992A (en) 2024-04-09

Family

ID=90527547

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211209825.5A Pending CN117854992A (en) 2022-09-30 2022-09-30 Solid state relay

Country Status (1)

Country Link
CN (1) CN117854992A (en)

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