TWI829371B - solid state relay - Google Patents

Abstract

A solid-state relay includes a first terminal, a plurality of metal oxygen semi-transistor wafers, a second terminal and a control circuit board. The first terminal is used to receive current signals. The first terminal is made of metal material and has a first terminal. Connection block; each metal oxide semi-transistor chip is electrically connected to the first connection block, and the bottom surface of each metal oxide semi-transistor chip is in direct contact with the upper surface of the first connection block; the second end The second terminal is for outputting current signals. The second terminal is made of metal material and has a second connection block electrically connected to each metal oxide semi-transistor chip. The second connection block is located directly above the first connection block. ; The control circuit board is electrically connected to the gate electrodes of each metal oxide semi-transistor chip and is located directly above the first connection block.

Description

solid state relay

The present invention relates to solid-state relays; in particular, it refers to a solid-state relay with better heat dissipation function.

Known electronic solid-state relays include an input terminal, an output terminal and a power component. The power component is used to control the conduction between the input terminal and the output terminal. When a signal is input from the input terminal, the output terminal can be caused by the power component. The terminal is connected to the input terminal and can output current.

Most of the conventional power components are installed on a copper/aluminum substrate and are connected to the input terminal and the output terminal through wire bonding. Since the heat dissipation performance of the insulating plate under the power component is poor, the power component The heat energy generated during operation cannot be effectively discharged, and the temperature may be too high to prevent normal operation. Therefore, conventional solid-state relays still need to be improved.

In view of this, the object of the present invention is to provide a solid-state relay with better heat dissipation function.

In order to achieve the above object, the present invention provides a solid-state relay including a first terminal, a plurality of metal oxide semi-transistor chips, a second terminal and a control circuit board. The first terminal is for receiving current signals. The first terminal It is made of metal material and has a first connection block; each metal oxide semi-transistor chip is electrically connected to the first connection block, and the bottom surface of each metal oxide semi-transistor chip is connected to the first connection block The upper surface is in direct contact; the second terminal is used for outputting current signals. The second terminal is made of metal material and has a second connection area that is electrically connected to each metal oxide semi-transistor chip. The second connection area The block is located directly above the first connection block; the control circuit board is electrically connected to each metal oxide semi-transistor chip and is located directly above the first connection block.

The effect of the present invention is that since the first terminal is made of metal material, by directly contacting the bottom surface of each metal oxide semi-transistor chip with the upper surface of the first connection block, each metal oxide semi-transistor The heat energy generated by the crystal chip during operation can be directly transferred to the first connection block to achieve a cooling effect. Compared with conventional solid-state relays, the solid-state relay of the present invention has better heat dissipation function.

In order to illustrate the present invention more clearly, the preferred embodiments are described in detail below along with the drawings. Please refer to FIGS. 1 to 4 , which shows a solid-state relay 1 according to a first preferred embodiment of the present invention. It includes a first terminal 10 , a plurality of metal-oxygen semi-transistor chips 20 , a second terminal 30 , and a thermally conductive insulator. board 40 and a control circuit board 50, in which the first terminal 10 is used to receive current signals, the second terminal 30 is used to output current signals, and the control circuit board 50 is used to output electrical signals to the metal oxide semi-transistor wafers. 20 To control the current path between the first terminal 10 and the second terminal 30 to be on or off, the control circuit board 50 may be a PCB board.

The first terminal 10 is made of a conductive metal material and has a first connection block 101 . The second terminal 30 is made of a conductive metal material and has a second connection block. 301, the control circuit board 50, the second connection block 301 and each metal oxide semi-transistor chip 20 are all disposed directly above the first connection block 101, and as shown in Figure 3, the second connection area The block 301 and the control circuit board 50 are arranged adjacent to each other, and each metal oxide semi-transistor chip 20 is arranged between the second connection block 301 and the control circuit board 50 .

Please refer to Figure 4. The first connection block 101 has an upper surface 101a facing upward. The bottom surfaces of the control circuit board 50, each metal oxide semi-transistor chip 20 and the thermally conductive insulating plate 40 are connected to the first connection block 101. The upper surface 101a of the block 101 is in direct contact. Since the first terminal 10 is made of metal, the bottom surface of the control circuit board 50 and the bottom surface of each metal oxide semi-transistor chip 20 are connected to the first connection block. With the upper surface 101a of 101 in direct contact, the heat energy generated by the control circuit board 50 and each metal oxide semi-transistor chip 20 during operation can be directly transferred to the first connection block 101 to achieve the effect of heat dissipation and cooling. .

Please continue to cooperate with Figure 4, in which the thermally conductive insulating plate 40 is located between the first connection block 101 and the second connection block 301, and the top and bottom surfaces of the thermally conductive insulating plate 40 are respectively in contact with the second connection block 301. The bottom surface of the first connection block 101 and the upper surface 101a of the first connection block 101 are in contact and fit together. That is to say, the first connection block 101, the thermally conductive insulating plate 40 and the second connection block 301 are stacked in sequence. The first connection block 101 and the second connection block 301 are separated by the thermally conductive insulating plate 40 .

Please refer to Figure 3 and Figure 4, in which the source of each metal oxide semi-transistor chip 20 is electrically connected to the second connection block 301 through wiring. In other embodiments, each metal oxide semi-transistor chip 20 is electrically connected to the second connection block 301 through wire bonding. The source electrode of the chip 20 can also be electrically connected to the second connection block 301 through metal sheet welding. In this embodiment, the source electrode of each metal oxide semi-transistor chip 20 is through a plurality of metal wires. is electrically connected to the second connection block 301, and the second connection block 301 is electrically connected to the control circuit board 50 to output source signals to the control circuit board 50; each metal oxide semi-transistor The drain electrode of the chip 20 is electrically connected to the first connection block 101. In this embodiment, the drain electrode of each metal oxide semi-transistor chip 20 is located at the bottom of each metal oxide semi-transistor chip 20 and passes through The upper surface is in direct contact with the first terminal 10 and is electrically connected. For example, each metal oxide semiconductor chip 20 can be connected to the upper surface of the first connection block 101 through reflow. surface, thereby greatly reducing the resistance of the current path; the gates of each metal oxide semi-transistor chip 20 are electrically connected to the control circuit board 50 through wire bonding.

It should be noted that in this embodiment, the first connection block 101 and the second connection block 301 are both flat-shaped, and the area of the first connection block 101 is larger than the area of the second connection block 301 , and the first connection block 101 and the second connection block 301 are arranged parallel to each other.

In addition, in this embodiment, the first terminal 10 has a first bending section 102, one end of the first bending section 102 is connected to one side of the first connection block 101, and the other end is away from And extending perpendicular to the direction of the upper surface 101a of the first connection block 101, the second terminal 30 has a second bending section 302, and one end of the second bending section 302 is connected to the second connection block 301. One side and the other end extend in a direction away from and perpendicular to the upper surface of the second connecting block 301. The first bending section 102 and the second bending section 302 can pass through a nut such as a nut as shown in Figure 2. The fastener is electrically connected to the external terminal in a locking manner.

Please refer to Figures 5 to 9 for a solid state relay 2 of a second preferred embodiment of the present invention. The solid state relay 2 has substantially the same structure as the solid state relay 1 of the first equally preferred embodiment and also includes the third A terminal 10, the metal oxide semi-transistor wafers 20, the second terminal 30, the thermally conductive insulating plate 40 and the control circuit board 50, and the bottom surface of each metal oxide semi-transistor wafer 20 and the first connection area The upper surface 101a of the block 101 is in direct contact, and each metal oxide semi-transistor chip 20, the control circuit board 50 and the second connection block 301 are located directly above the first connection block 101; the difference is that in the In the second preferred embodiment, the solid state relay 2 further includes a gate circuit board 60, a thermally conductive insulation sheet 70 and a heat sink 80, and the control circuit board 50 has different placement positions. The gate circuit board 60 It can be a PCB board.

Please refer to FIG. 9 , the heat sink 80 , the thermally conductive insulating sheet 70 , the first connection block 101 , the thermally conductive insulating plate 40 , the second connection block 301 , the gate circuit board 60 and the control circuit board 50 Stacked in sequence from bottom to top, the thermally conductive insulating sheet 70 is disposed between the first connection block 101 and the heat sink 80, and the thermally conductive insulating sheet 70 is respectively connected to the lower surface of the first connection block 101 and the heat sink 80. The upper surface of the heat sink 80 is in contact and fit. The gate circuit board 60 is disposed on the upper surface 101a of the second connection block 301. The control circuit board 50 is electrically connected to the gate circuit board 60 through a wire 601. (Fig. 7), and the gate circuit board 60 is electrically connected to the gates of each metal oxide semi-transistor chip 20 through the control circuit board 50, wherein the gate circuit board 60 is connected to each gate through wire bonding. The gate electrode of the metal oxide semi-transistor chip 20 is electrically connected through the heat sink 80, the thermally conductive insulating sheet 70, the first connection block 101, the thermally conductive insulating plate 40, the second connection block 301, the The stacked design of the gate circuit board 60 and the control circuit board 50 can achieve the effect of greatly reducing the overall volume of the solid state relay 2 .

Each metal oxide semi-transistor chip 20 is arranged adjacent to the second connection block 301 and is located on the left and right sides of the second connection block 301. In other embodiments, each metal oxide semi-transistor chip 20 is disposed adjacent to the second connection block 301. It may also be disposed on the same side of the second connection block 301 .

It should be noted that in this embodiment, the first terminal 10 has a first extension section 104, one end of the first extension section 104 is connected to the first bending section 102, and the second terminal 30 has a second extension section 104. The extension section 304, one end of the second extension section 304 is connected to the second bending section 302, the first extension section 104 and the second extension section 304, as shown in Figures 6 and 7, can be tightened through a nut, for example. The firmware is electrically connected to the external endpoint in a locked manner.

In addition, in this embodiment, the solid state relay 2 includes two connection terminals. One of the two connection terminals 90 is electrically connected to the first terminal 10 and the control circuit board 50 respectively. The two connection terminals The other one of 90 is electrically connected to the second terminal 30 and the control circuit board 50 respectively, thereby monitoring the voltage of the first terminal 10 and the second terminal 30 .

In this embodiment, the two connection terminals 90 are respectively disposed at diagonal corners of the control circuit board 50 , and one end of the two connection terminals 90 is connected to the control circuit board 50 , and the other end is connected to the third control circuit board 50 through screw locking. A terminal 10 and the second terminal 30 are connected, thereby disposing the control circuit board 50 at a position above the first connection block 101 and the second connection block 301 .

To sum up, since the first terminal of the solid state relay of the present invention is made of metal material, the bottom surface of each metal oxide semi-transistor chip is directly connected to the upper surface of the first connection block of the first terminal. Through contact, the heat energy generated by each metal-oxygen semi-transistor chip during operation can be directly transferred to the first connection block to achieve a cooling effect. Compared with conventional solid-state relays, the solid-state relay of the present invention has better performance cooling function.

The above are only the best possible embodiments of the present invention. Any equivalent changes made by applying the description and patent scope of the present invention should be included in the patent scope of the present invention.

[Invention]

1,2:Solid state relay

10:First terminal

101: First connection block

101a: Upper surface

102 first bending section

104: First extension section

20: Metal Oxide Semiconductor Crystal Chip

30: Second terminal

301: Second connection block

302: Second bending section

304: Second extension section

40:Thermal conductive insulation board

50:Control circuit board

60: Gate circuit board

601:Wire

70: Thermal insulation sheet

80:Heat sink

90:Connection terminal

Figure 1 is a perspective view of a solid state relay according to a first preferred embodiment of the present invention. FIG. 2 is an exploded schematic diagram of some components of the solid-state relay according to the above-mentioned first preferred embodiment. Figure 3 is a top view of some components of Figure 2; Figure 4 is a cross-sectional view along the direction 4-4 of Figure 3 . Figure 5 is a perspective view of a solid state relay according to a second preferred embodiment of the present invention. FIG. 6 is an exploded schematic diagram of some components of the solid-state relay according to the above-mentioned second preferred embodiment. FIG. 7 is an exploded view of some components of FIG. 6 . FIG. 8 is a top view of some components of FIG. 7 . Figure 9 is a cross-sectional view along the direction 9-9 of Figure 8 .

1:Solid state relay

10:First terminal

101: First connection block

102: First bending section

20: Metal Oxide Semiconductor Crystal Chip

30: Second terminal

301: Second connection block

302: Second bending section

50:Control circuit board

Claims (10)

A solid state relay containing: a first terminal for receiving current signals, the first terminal is made of metal material and has a first connection block; A plurality of metal-oxide-semiconductor crystal wafers, each metal-oxygen-semiconductor crystal chip is electrically connected to the first connection block, and the bottom surface of each metal-oxide-semiconductor crystal chip is in direct contact with the upper surface of the first connection block; A second terminal for outputting current signals. The second terminal is made of metal and has a second connection block electrically connected to each metal oxide semi-transistor chip. The second connection block is located on the first directly above the connection block; and A control circuit board is electrically connected to the gate electrode of each metal oxide semi-transistor chip and is located directly above the first connection block. The solid state relay of claim 1, wherein the upper surface of the first connection block faces upward, and the drain electrode of each metal oxide semi-transistor chip is located at the bottom of each metal oxide semi-transistor chip and connected with the upper surface of the metal oxide semi-transistor chip. Surfaces are in direct contact and electrically connected. The solid state relay of claim 1, wherein the first connection block and the second connection block are both flat-shaped, and the first connection block and the second connection block are arranged parallel to each other. The solid state relay of claim 2, wherein the bottom surface of the control circuit board is in contact with the upper surface. The solid state relay as described in claim 2, including a thermally conductive insulating plate located between the first connection block and the second connection block, the top surface and the bottom surface of the thermally conductive insulating plate being respectively in contact with the second connection block. The bottom surface is in contact with the upper surface of the first connection block. The solid state relay of claim 1, wherein the second connection block is electrically connected to the source of each metal oxide semi-transistor chip through wire bonding or metal sheet welding, and the control circuit board is electrically connected to each metal oxide semi-transistor chip through wire bonding. The gate electrode of the semi-transistor chip is electrically connected. The solid state relay as described in claim 1 includes a gate circuit board, the first connection block, the second connection block, the gate circuit board and the control circuit board are stacked in sequence, and the control circuit board The gate circuit board is electrically connected to the gate electrodes of each metal oxide semi-transistor chip. The solid state relay of claim 7, wherein the gate circuit board is disposed on the upper surface of the second connection block. The solid state relay of claim 1 includes a thermally conductive insulating sheet and a heat sink. The thermally conductive insulating sheet is disposed between the first connection block and the heat sink, and the thermally conductive insulating sheet is connected to the first connection block respectively. The lower surface of the block is in contact with the upper surface of the heat sink. The solid state relay of claim 1, wherein the first terminal has a first bending section, one end of the first bending section is connected to one side of the first connection block, and the other end is away from and perpendicular to the first connection block. The second terminal extends in the direction of the upper surface of the first connection block. The second terminal has a second bending section. One end of the second bending section is connected to one side of the second connection block, and the other end is away from and perpendicular to The second connection block extends in the direction of the upper surface.

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