CN117810287A - Infrared detector, spectrum chip and polychromatic imaging chip - Google Patents
Infrared detector, spectrum chip and polychromatic imaging chip Download PDFInfo
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Abstract
The present disclosure provides an infrared detector, a spectral chip, and a polychromatic imaging chip. The infrared detector includes: a substrate, a first infrared quantum dot layer, a first dielectric layer and a second infrared quantum dot layer which are sequentially overlapped; a first electrode and a second electrode; the first electrode and the second electrode are arranged on the same side or opposite sides of the first infrared quantum dot layer, and the first electrode is in contact with the substrate; the first quantum dots are arranged in the first infrared quantum dot layer, and the second quantum dots are arranged in the second infrared quantum dot layer; the first quantum dots and the second quantum dots are used for absorbing infrared light; and the size of the first quantum dot is larger than the size of the second quantum dot. The infrared detector disclosed by the invention is simple and small in structure, easy to integrate in a large scale and can be used for manufacturing a spectrum chip and a multicolor imaging chip.
Description
Technical Field
The present disclosure relates to the field of infrared spectrum detectors, and in particular, to an infrared detector, a spectrum chip, and a polychromatic imaging chip.
Background
Conventional spectral detection is based on spatial filters and conventional photodetectors. The spatial filter realizes spectral filtering, so that a certain wavelength passes through, the detector receives the optical signal to generate photocurrent, and the steps are repeated to obtain photocurrents with different wavelengths. Based on the spectral response data of the detector, the optical power of different wavelengths can be obtained by combining the photocurrents of different wavelengths, and the incident spectral data can be obtained.
The novel spectrum detection is based on an array detector and an on-chip filter, so that the spectrum detection is realized. This approach can improve spectral detection efficiency and reduce the size of the spectral detection system.
However, the conventional on-chip filter adopts a high-low refractive index lamination or a super-surface structure, the process is complex, miniaturization and large-scale manufacturing are not easy, and a spectrum chip with high spectrum resolution cannot be realized. For infrared spectrum chips, the related art is still left blank.
Disclosure of Invention
First, the technical problem to be solved
To the technical problems of the prior art, the present disclosure provides an infrared detector, a spectrum chip and a polychromatic imaging chip for at least partially solving the above technical problems.
(II) technical scheme
The present disclosure provides an infrared detector, comprising: a substrate, a first infrared quantum dot layer, a first dielectric layer and a second infrared quantum dot layer which are sequentially overlapped; a first electrode and a second electrode; the first electrode and the second electrode are arranged on the same side or opposite sides of the first infrared quantum dot layer, and the first electrode is in contact with the substrate; the first quantum dots are arranged in the first infrared quantum dot layer, and the second quantum dots are arranged in the second infrared quantum dot layer; the first quantum dots and the second quantum dots are used for absorbing infrared light; and the size of the first quantum dot is larger than the size of the second quantum dot.
Optionally, the size of the first quantum dot and the size of the second quantum dot are in the range of 2 nm-10 nm; the first quantum dot is of a core structure, and the second quantum dot is of a core-shell structure; the first quantum dots and the second quantum dots are made of the same material, and the material of the first quantum dots is lead sulfide or mercury telluride.
Optionally, the thickness of the first infrared quantum dot layer ranges from 50nm to 1000nm, and the thickness of the second infrared quantum dot layer ranges from 100nm to 50000nm.
Optionally, the infrared detector further comprises: the second dielectric layer is arranged on one side of the second infrared quantum dot layer, which is far away from the substrate; the second dielectric layer and the first dielectric layer are both made of insulating materials, and the insulating materials comprise parylene, silicon oxide, silicon nitride and aluminum oxide; the thickness of the first dielectric layer ranges from 10nm to 50nm, and the thickness of the second dielectric layer ranges from 50nm to 200nm.
Optionally, the substrate is a silicon substrate or a CMOS chip; when the substrate is a silicon substrate, a silicon oxide layer is arranged on the surface of one side of the silicon substrate, which is close to the first infrared quantum dot layer.
Optionally, the first electrode and the second electrode are disposed on the same side of the first infrared quantum dot layer; the first electrode and the second electrode are made of titanium-gold lamination, and titanium is arranged on one side close to the substrate.
Optionally, the first electrode and the second electrode are disposed on opposite sides of the first infrared quantum dot layer, and two opposite surfaces of the first infrared quantum dot layer are different types of doped surfaces to form a PN junction; the first electrode is made of titanium-gold lamination, and titanium is arranged on one side close to the substrate; and the second electrode is made of ITO, and the thickness of the second electrode ranges from 100nm to 1000nm.
Optionally, the infrared detector further comprises: an electron transport layer and a hole transport layer; the electron transport layer and the hole transport layer are arranged on opposite sides of the first infrared quantum dot layer and are used for promoting the transmission of photon-generated carriers.
Another aspect of the present disclosure provides a spectral chip comprising: a plurality of infrared detectors of any of the embodiments of the present disclosure; wherein the detection spectral range of each infrared detector is at least partially different.
Yet another aspect of the present disclosure provides a multicolor imaging chip comprising: m pixels, M is a positive integer; each pixel comprises N infrared detectors of any embodiment of the disclosure, wherein N is a positive integer; and the detection spectral range of each infrared detector is at least partially different.
(III) beneficial effects
Compared with the prior art, the infrared detector, the spectrum chip and the multicolor imaging chip provided by the present disclosure have at least the following beneficial effects:
(1) According to the infrared detector disclosed by the invention, by arranging the two infrared quantum dot layers with different quantum dot sizes, the narrow-band detection of infrared light can be realized, and the spectral resolution is improved. The infrared detector disclosed by the invention is simple and small in structure, easy to integrate in a large scale and can be used for manufacturing a spectrum chip and a multicolor imaging chip.
(2) According to the infrared detector disclosed by the disclosure, the second quantum dot is of a core-shell structure, so that the stability of the quantum dot is improved, and the stability of the infrared detector is further improved.
(3) According to the infrared detector disclosed by the invention, the narrow-band infrared photoelectric detector and the narrow-band infrared photoelectric detector can be manufactured according to different metal electrode distribution, and the application range is wide.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent from the following description of embodiments thereof with reference to the accompanying drawings in which:
FIG. 1A schematically illustrates a block diagram of an infrared detector according to an embodiment of the present disclosure; FIG. 1B schematically illustrates an operational schematic of an infrared detector according to an embodiment of the present disclosure;
FIG. 2 schematically illustrates a block diagram of an infrared photovoltaic detector according to an embodiment of the present disclosure;
FIG. 3 schematically illustrates a composition diagram of a spectral chip according to an embodiment of the disclosure;
FIG. 4 schematically illustrates a composition diagram of a multicolor imaging chip in accordance with an embodiment of the disclosure;
FIG. 5 schematically illustrates a fabrication process structure variation diagram of an infrared light guide detector in accordance with an embodiment of the present disclosure;
fig. 6 schematically illustrates a fabrication process structure variation diagram of an infrared photovoltaic detector according to an embodiment of the present disclosure.
[ reference numerals description ]
1-a substrate; 11-a silicon oxide layer; 2-a first infrared quantum dot layer; 3-a first dielectric layer; 4-a second infrared quantum dot layer; 5-a first electrode; 6-a second electrode; 7-a second dielectric layer; 8-pixels;
a-a first infrared detector; b-a second infrared detector; c-a third infrared detector; d-a fourth infrared detector; e-a fifth infrared detector; f-a sixth infrared detector; g-seventh infrared detector; an H-eighth infrared detector; i-ninth infrared detector.
Detailed Description
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
In the drawings or description, like or identical parts are provided with the same reference numerals. Features of the embodiments illustrated in the description may be combined freely to form new solutions without conflict, in addition, each claim may be used alone as one embodiment or features of the claims may be combined as a new embodiment, and in the drawings, the shape or thickness of the embodiments may be enlarged and labeled in a simplified or convenient manner. Furthermore, elements or implementations not shown or described in the drawings are of a form known to those of ordinary skill in the art. Additionally, although examples of parameters including particular values may be provided herein, it should be appreciated that the parameters need not be exactly equal to the corresponding values, but may be approximated to the corresponding values within acceptable error margins or design constraints.
The various embodiments of the disclosure described above may be freely combined to form additional embodiments, unless otherwise technical hurdles or contradictions exist, which are all within the scope of the disclosure.
Although the present disclosure has been described with reference to the accompanying drawings, the examples disclosed in the drawings are intended to illustrate preferred embodiments of the present disclosure and are not to be construed as limiting the present disclosure. The dimensional proportions in the drawings are illustrative only and should not be construed as limiting the present disclosure.
Although a few embodiments of the present general inventive concept have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the general inventive concept, the scope of which is defined in the claims and their equivalents.
First, the related terms of the embodiments of the present disclosure are explained as follows:
an infrared detector: is a device capable of detecting infrared light and is commonly used in the fields of spectroscopy, astronomy and the like. It is capable of measuring the infrared radiation emitted or absorbed by an object to reveal its composition and characteristics. The principle of operation of infrared spectrum detectors is to use the spectral information generated when infrared radiation interacts with a substance. When infrared light impinges on a substance, the substance absorbs infrared light of a particular wavelength, resulting in a change in the spectrum. These changes may reflect the molecular structure and chemical composition of the substance.
Narrow band detector: is a special spectral detector with a very narrow bandwidth, typically only a few nanometers or less. Narrowband detectors are commonly used in the fields of high resolution spectroscopic analysis, trace element detection, and the like. The bandwidth of the narrowband detector is very narrow so that it can detect optical radiation of a specific wavelength and has a very high spectral resolution. This enables the narrowband detector to detect very weak light signals, even single photons. Thus, narrowband detectors perform well in many high sensitivity applications, such as in the fields of bioimaging, environmental monitoring, astronomical observation, and the like.
ITO electrode (Indium Tin Oxide): is an important electrode material, which is a transparent conductive film made of doped indium tin oxide. The material has the characteristics of high conductivity, visible light transmittance, infrared reflectivity and the like, so that the material has wide application in the photoelectric field.
Narrow band infrared conductivity detector: is a special type of infrared detector and is mainly characterized by having narrow-band response characteristics. Such detectors are sensitive to infrared radiation in a specific wavelength or narrow band of wavelengths, while being insensitive to radiation of other wavelengths. The principle of operation of narrowband infrared photoconductive detectors is generally based on the photoconductive effect. When infrared radiation impinges on the sensitive material of the detector, photons interact with electrons in the material, causing electrons to transition from the valence band to the conduction band, creating photogenerated carriers. These photogenerated carriers move within the material, changing the conductivity of the material, thereby producing a measurable electrical signal. Because narrowband infrared photoconductive detectors are sensitive only to infrared radiation of a particular wavelength, they typically have a high signal-to-noise ratio and low background noise. This makes them advantageous in many applications, especially in infrared spectroscopy where high sensitivity and high resolution are required.
Narrow-band infrared photovoltaic detector: is a detector specifically designed to detect infrared light in a narrow wavelength range. Such detectors use the photovoltaic effect to convert infrared light into electrical energy. Narrow-band infrared photovoltaic detectors are typically made of photosensitive materials such as HgCdTe (cadmium mercury telluride) or InGaAs (indium gallium arsenide) or the like. These materials have high absorption efficiency and photoelectric response in a specific infrared wavelength range. When infrared light impinges on the photosensitive material of the detector, photons are absorbed and converted into electron-hole pairs. Under the action of the electric field, the electrons and the holes respectively move in opposite directions to form an electric signal.
Spectrum chip: is an integrated device capable of detecting and identifying light of different wavelengths and is typically composed of a plurality of light-sensitive pixels, each pixel being capable of sensing light of a particular wavelength. The principle of operation of a spectral chip is based on the photoelectric effect, when light impinges on a photosensitive pixel on the chip, photon energy is absorbed and converted into electron-hole pairs. These electron-hole pairs are separated by an electric field and generate a current or voltage signal, thereby effecting detection of light.
Multicolor imaging chip: is a chip capable of simultaneously detecting and recording light of a plurality of colors or wavelengths. Such chips are typically composed of a plurality of pixels of different wavelength sensitivity, each pixel being capable of sensing light of a particular wavelength and generating a corresponding image signal. The working principle of the multicolor imaging chip is based on the photoelectric effect and the spectrum light splitting technology. Specifically, when light is irradiated onto the chip, light of different wavelengths is absorbed by pixels of corresponding sensitivity and converted into an electronic signal. These signals are further processed and converted into image data to enable recording and display of light of multiple colors or wavelengths.
Parylene: is a parylene polymer and is a thermoplastic. The preparation method can be prepared by a unique vacuum vapor deposition process, can obtain a film substance by vapor deposition under the room temperature condition, and can generate a film with any thickness within hundreds of micrometers. The Parylene has excellent characteristics of uniformity, conformality, no micropores, no defects, inactive chemical property and the like. The Parylene has excellent electrical insulation and protection, and is the most effective dampproof, mildew-proof, corrosion-proof and salt mist-proof coating material in the current generation. It can be applied to surfaces of various shapes, including sharp edges, crevices, and internal surfaces.
Fig. 1A schematically illustrates a block diagram of an infrared detector according to an embodiment of the present disclosure. Fig. 1B schematically illustrates an operational schematic of an infrared detector according to an embodiment of the present disclosure.
The present disclosure provides an infrared detector, as shown in fig. 1, for example, including: a substrate 1, a first infrared quantum dot layer 2, a first dielectric layer 3 and a second infrared quantum dot layer 4 which are sequentially overlapped. A first electrode 5 and a second electrode 6. The first electrode 5 and the second electrode 6 are disposed on the same side or opposite sides of the first infrared quantum dot layer 2, and the first electrode 5 contacts the substrate 1. The first quantum dots are arranged in the first infrared quantum dot layer 2, and the second quantum dots are arranged in the second infrared quantum dot layer 4. The first quantum dots and the second quantum dots are used for absorbing infrared light. And the size of the first quantum dot is larger than the size of the second quantum dot.
In some embodiments, the size of the first quantum dot and the size of the second quantum dot range, for example, from 2nm to 10nm. The first quantum dot is, for example, a core structure, and the second quantum dot is, for example, a core-shell structure. The first quantum dot and the second quantum dot are made of the same material, and the material of the first quantum dot is lead sulfide or mercury telluride, for example. When lead sulfide is adopted as a quantum dot material, the infrared detector is used for realizing short-wave narrow-band detection. When mercury telluride is used as the quantum dot material, the infrared detector is used for realizing short wave and medium wave narrow-band detection.
For example, an infrared detector has the following specific structure:
a substrate: silicon wafers are selected as the substrates of the detectors. First infrared quantum dot layer: lead sulfide material is used to grow on the substrate by chemical vapor deposition technique. A first dielectric layer: silicon nitride material is selected, and the thickness of the silicon nitride material is 30nm. And a second infrared quantum dot layer: and growing on the first dielectric layer by adopting a lead sulfide material through a chemical vapor deposition technology. A first electrode: gold material is selected and arranged on the same side of the first infrared quantum dot layer through an evaporation process. A second electrode: gold material is also selected and arranged on the same side of the first infrared quantum dot layer through an evaporation process.
In the first infrared quantum dot layer, lead sulfide material is adopted, and the first quantum dot (quantum dot is also called colloid quantum dot) is formed through an ion implantation method, wherein the size of the first quantum dot is 5nm. And in the second infrared quantum dot layer, lead sulfide material is adopted, and the second quantum dot is formed by an ion implantation method, wherein the size of the second quantum dot is 4.5nm. The second quantum dot is of a core-shell structure, the inner layer is lead sulfide, and the outer layer is a protective film formed by other materials. The infrared detector has higher detection sensitivity and stability, and can be widely applied to various fields requiring infrared detection.
In some embodiments, the first infrared quantum dot layer has a thickness ranging, for example, from 50nm to 1000nm, and the second infrared quantum dot layer has a thickness ranging, for example, from 100nm to 50000nm.
For example, an infrared detector has the following specific structure:
a substrate: silicon wafers are selected as the substrates of the detectors. First infrared quantum dot layer: mercury telluride material is used to grow on the substrate by chemical vapor deposition technique, and the thickness is 750nm. A first dielectric layer: silicon nitride material is selected, and the thickness of the silicon nitride material is 100nm. And a second infrared quantum dot layer: and (3) growing mercury telluride on the first dielectric layer by a chemical vapor deposition technology, wherein the thickness of the mercury telluride is 20000 nanometers. A first electrode: gold material is selected and arranged on the same side of the first infrared quantum dot layer through an evaporation process. A second electrode: gold material is also selected and arranged on the opposite side of the first infrared quantum dot layer through an evaporation process.
And in the first infrared quantum dot layer, mercury telluride material is adopted, and the first quantum dot is formed through an ion implantation method, wherein the size of the first quantum dot is 8nm. And in the second infrared quantum dot layer, mercury telluride material is adopted, and the second quantum dot is formed through an ion implantation method, wherein the size of the second quantum dot is 7.6nm. The second quantum dot is of a core-shell structure, the inner layer is mercury telluride, and the outer layer is a protective film formed by other materials.
The working principle of the narrow-band detector is that the absorption side wavelength lambda of the absorption spectrum of the second infrared quantum dot layer 2 Absorption edge wavelength lambda less than absorption spectrum of first infrared quantum dot layer 1 The two layers are combined to realize lambda 2 To lambda 1 Is a narrowband probe of (b). As shown in fig. 1B, lambda 2 For example 3 μm lambda 1 For example 3.2 um, so that only light of 3 um to 3.2 um can be absorbed, a narrow-band detection of the infrared detector is achieved. By controlling the thickness of the first and second infrared quantum dot layers, the performance and response range of the detector can be better tuned.
In some embodiments, as shown in fig. 1, the infrared detector further includes, for example: the second dielectric layer 7 is disposed on a side of the second infrared quantum dot layer 4 away from the substrate 1. The second dielectric layer 7 and the first dielectric layer 3 are both made of insulating materials, and the insulating materials include parylene, silicon oxide, silicon nitride and aluminum oxide. The thickness of the first dielectric layer 3 is, for example, 10nm to 50nm, and the thickness of the second dielectric layer 7 is, for example, 50nm to 200nm.
For example, an infrared detector has the following specific structure:
a substrate: silicon wafers are selected as the substrates of the detectors. First infrared quantum dot layer: lead sulfide material is adopted to grow on the substrate through a chemical vapor deposition technology, and the thickness of the lead sulfide material is 500nm. A first dielectric layer: the parylene material is selected, and the thickness of the parylene material is 20nm. And a second infrared quantum dot layer: and (3) growing a lead sulfide material on the first dielectric layer by a chemical vapor deposition technology, wherein the thickness of the lead sulfide material is 5000nm. And a second dielectric layer: and selecting a silicon oxide material, and arranging the silicon oxide material on one side of the second infrared quantum dot layer far away from the substrate, wherein the thickness of the silicon oxide material is 100nm. A first electrode: gold material is selected and arranged on the same side of the first infrared quantum dot layer through an evaporation process. A second electrode: gold material is also selected and arranged on the opposite side of the first infrared quantum dot layer through an evaporation process.
And in the first infrared quantum dot layer, lead sulfide material is adopted, and the first quantum dot is formed by an ion implantation method, wherein the size of the first quantum dot is 4nm. And in the second infrared quantum dot layer, lead sulfide material is adopted, and the second quantum dot is formed through an ion implantation method, wherein the size of the second quantum dot is 3.8nm. The second quantum dot is of a core-shell structure, the inner layer is lead sulfide, and the outer layer is a protective film formed by other materials. By controlling the thickness of the first dielectric layer and the second dielectric layer, the performance and response range of the detector can be better adjusted. Meanwhile, the first dielectric layer and the second dielectric layer are both made of insulating materials, so that the detector can be protected from the influence of external environment, and the stability and reliability of the detector are improved.
It will be appreciated that in addition to the insulating materials mentioned in the above embodiments, other insulating materials may be used for the dielectric layer, such as: high molecular polymer: for example, polyimide (PI), parylene (Parylene C) and the like, which have higher thermal stability, electrical insulation performance and mechanical strength, and are suitable for application in severe environments such as high temperature, high humidity and the like. Ceramic material: such as aluminum oxide, silicon nitride, boron nitride and the like, which have extremely high insulating property and high temperature resistance, and are suitable for application in extreme environments such as high temperature, high pressure and the like. Glass material: such as quartz glass, borosilicate glass, etc., which has excellent chemical stability, electrical insulation properties and high temperature resistance, and is suitable for applications in various environments.
It should be noted that different insulating materials have different performance characteristics, so that in practical application, an appropriate insulating material needs to be selected according to specific requirements.
In some embodiments, as shown in fig. 1, the substrate 1 may be, for example, a silicon substrate or a CMOS chip. When the substrate 1 is a silicon substrate, a silicon oxide layer 11 is disposed on a surface of the silicon substrate, which is close to the first infrared quantum dot layer 2.
For example, an infrared detector has the following specific structure:
a substrate: a CMOS (Complementary Metal Oxide Semiconductor ) chip is selected as the substrate for the detector. First infrared quantum dot layer: lead sulfide material is adopted to grow on the CMOS chip through a chemical vapor deposition technology, and the thickness of the lead sulfide material is 100nm. A first dielectric layer: silicon nitride material is selected, and the thickness of the silicon nitride material is 20nm. And a second infrared quantum dot layer: and (3) growing a lead sulfide material on the first dielectric layer by a chemical vapor deposition technology, wherein the thickness of the lead sulfide material is 2000nm. And a second dielectric layer: and selecting a silicon oxide material, and arranging the silicon oxide material on one side of the second infrared quantum dot layer far away from the substrate, wherein the thickness of the silicon oxide material is 80nm. A first electrode: gold material is selected and arranged on the same side of the first infrared quantum dot layer through an evaporation process. A second electrode: gold material is also selected and arranged on the same side of the first infrared quantum dot layer through an evaporation process.
And in the first infrared quantum dot layer, lead sulfide material is adopted, and the first quantum dot is formed by an ion implantation method, wherein the size of the first quantum dot is 2nm. And in the second infrared quantum dot layer, lead sulfide material is adopted, and the second quantum dot is formed through an ion implantation method, wherein the size of the second quantum dot is 1.9nm. The second quantum dot is of a core-shell structure, the inner layer is lead sulfide, and the outer layer is a protective film formed by other materials. When the substrate is a silicon substrate, a silicon oxide layer is arranged on the surface of one side of the silicon substrate, which is close to the first infrared quantum dot layer, and the thickness of the silicon oxide layer is 10nm. The arrangement of the silicon oxide layer can protect the silicon substrate from the influence of external environment, and improve the stability and reliability of the silicon substrate. When a CMOS chip is used as a substrate, direct connection of the first electrode to the signal processing circuit can be achieved. Namely, the CMOS chip can be conveniently integrated with other electronic devices as a substrate, thereby realizing multifunction and miniaturization.
According to an embodiment of the present disclosure, as shown in fig. 1, the first electrode 5 and the second electrode 6 are disposed on the same side of the first infrared quantum dot layer 2. The materials of the first electrode 5 and the second electrode 6 are, for example, titanium-gold laminate, and titanium is disposed on the side close to the substrate 1. When the first electrode 5 and the second electrode 6 are disposed on the same side of the first infrared quantum dot layer 2, the infrared detector is, for example, an infrared photoconductive detector.
For example, a narrow-band infrared photoconductive detector is specifically configured as follows:
a substrate: silicon wafers are selected as the substrates of the detectors. First infrared quantum dot layer: lead sulfide material is adopted to grow on the substrate through a chemical vapor deposition technology, and the thickness of the lead sulfide material is 500nm. A first dielectric layer: the parylene material is selected, and the thickness of the parylene material is 15nm. And a second infrared quantum dot layer: and (3) growing a lead sulfide material on the first dielectric layer by a chemical vapor deposition technology, wherein the thickness of the lead sulfide material is 20000nm. And a second dielectric layer: and selecting a silicon oxide material, wherein the silicon oxide material is arranged on one side of the second infrared quantum dot layer far away from the substrate, and the thickness of the silicon oxide material is 70nm. First electrode and second electrode: titanium-gold laminated materials are selected and arranged on the same side of the first infrared quantum dot layer. Wherein, the titanium is arranged on one side close to the substrate, the thickness of gold is 10nm, and the thickness of titanium is 20nm.
And in the first infrared quantum dot layer, lead sulfide material is adopted, and the first quantum dot is formed by an ion implantation method, wherein the size of the first quantum dot is 4nm. And in the second infrared quantum dot layer, lead sulfide material is adopted, and the second quantum dot is formed through an ion implantation method, wherein the size of the second quantum dot is 3.4nm. The second quantum dot is of a core-shell structure, the inner layer is lead sulfide, and the outer layer is a protective film formed by other materials. The titanium-gold laminate has excellent conductivity and corrosion resistance as an electrode material, and can ensure long-term stable operation of the detector. Meanwhile, the arrangement of the titanium-gold lamination can also improve the reflection performance and the thermal stability of the detector, and further enhance the performance of the detector.
Fig. 2 schematically illustrates a block diagram of an infrared photovoltaic detector according to an embodiment of the present disclosure.
According to an embodiment of the present disclosure, as shown in fig. 2, the first electrode 5 and the second electrode 6 are disposed on opposite sides of the first infrared quantum dot layer 2, and two opposite surfaces of the first infrared quantum dot layer 2 are different types of doped surfaces to form a PN junction. The material of the first electrode 5 is a titanium-gold laminate, and titanium is provided on the side close to the substrate. And the material of the second electrode 6 is ITO, and the thickness of the second electrode 6 ranges from 100nm to 1000nm.
For example, a narrow-band infrared photovoltaic detector has the following specific structure:
a substrate: silicon wafers are selected as the substrates of the detectors. First infrared quantum dot layer: lead sulfide material is adopted to grow on the substrate through a chemical vapor deposition technology, and the thickness of the lead sulfide material is 200nm. A first dielectric layer: the parylene material is selected, and the thickness of the parylene material is 50nm. And a second infrared quantum dot layer: and (3) growing a lead sulfide material on the first dielectric layer by a chemical vapor deposition technology, wherein the thickness of the lead sulfide material is 10000nm. And a second dielectric layer: and selecting a silicon oxide material, and arranging the silicon oxide material on one side of the second infrared quantum dot layer far away from the substrate, wherein the thickness of the silicon oxide material is 100nm. First electrode and second electrode: the specific materials are selected and arranged on the opposite sides of the first infrared quantum dot layer. The first electrode is made of titanium-gold lamination, titanium is arranged on one side close to the substrate, the thickness of the gold is 5nm, and the thickness of the titanium is 15nm. The material of the second electrode is ITO, and the thickness of the second electrode is 500nm.
And in the first infrared quantum dot layer, lead sulfide material is adopted, and the first quantum dot is formed by an ion implantation method, wherein the size of the first quantum dot is 3nm. And in the second infrared quantum dot layer, lead sulfide material is adopted, and the second quantum dot is formed through an ion implantation method, wherein the size of the second quantum dot is 2.5nm. The second quantum dot is of a core-shell structure, the inner layer is lead sulfide, and the outer layer is a protective film formed by other materials. The two opposite surfaces of the first infrared quantum dot layer are doped surfaces of different types, and a PN junction is formed, so that the photoelectric conversion efficiency and the response speed of the detector are improved. Meanwhile, the titanium-gold laminate and the ITO are used as electrode materials, so that the electrode materials have excellent conductivity and stability, and long-term stable operation of the detector can be ensured.
In some embodiments, the infrared detector further comprises, for example: an electron transport layer and a hole transport layer. The electron transport layer and the hole transport layer are arranged on opposite sides of the first infrared quantum dot layer and are used for promoting the transmission of photon-generated carriers.
For example, a narrow-band infrared photovoltaic detector has the following specific structure:
a substrate: silicon wafers are selected as the substrates of the detectors. First infrared quantum dot layer: lead sulfide material is adopted to grow on the substrate through a chemical vapor deposition technology, and the thickness of the lead sulfide material is 300nm. A first dielectric layer: silicon nitride material is selected, and the thickness of the silicon nitride material is 30nm. And a second infrared quantum dot layer: and (3) growing a lead sulfide material on the first dielectric layer by a chemical vapor deposition technology, wherein the thickness of the lead sulfide material is 15000nm. And a second dielectric layer: and selecting a silicon oxide material, wherein the silicon oxide material is arranged on one side of the second infrared quantum dot layer far away from the substrate, and the thickness of the silicon oxide material is 120nm. First electrode and second electrode: the specific materials are selected and arranged on the opposite sides of the first infrared quantum dot layer. The first electrode is made of a titanium-gold laminate, titanium is arranged on one side close to the substrate, the thickness of the gold is 10nm, and the thickness of the titanium is 20nm. The material of the second electrode is ITO, and the thickness of the second electrode is 800nm. An electron transport layer and a hole transport layer: is disposed on an opposite side of the first infrared quantum dot layer. The electron transport layer is made of zinc oxide material, and the hole transport layer is made of poly (3, 4-ethylenedioxythiophene) -poly (styrenesulfonic acid) (PEDOT: PSS) material. The electron transport layer and the hole transport layer had thicknesses of 20nm and 50nm, respectively.
And in the first infrared quantum dot layer, lead sulfide material is adopted, and the first quantum dot is formed by an ion implantation method, wherein the size of the first quantum dot is 4nm. And in the second infrared quantum dot layer, lead sulfide material is adopted, and the second quantum dot is formed through an ion implantation method, wherein the size of the second quantum dot is 3.5nm. The second quantum dot is of a core-shell structure, the inner layer is lead sulfide, and the outer layer is a protective film formed by other materials. By arranging the electron transport layer and the hole transport layer, the transport of photo-generated carriers can be promoted, so that the photoelectric conversion efficiency and the response speed of the detector are improved. In addition, the choice of materials for the electron transport layer and the hole transport layer also helps to improve the stability and reliability of the detector.
Fig. 3 schematically shows a composition diagram of a spectral chip according to an embodiment of the disclosure.
Another aspect of the present disclosure provides a spectral chip, for example, comprising: a plurality of infrared detectors of any of the embodiments of the present disclosure. Wherein the detection spectral range of each infrared detector is at least partially different.
For example, as shown in fig. 3, a spectral chip includes:
1000 infrared detectors such as a first infrared detector a, a second infrared detector B, a third infrared detector C, a fourth infrared detector D, a fifth infrared detector E, a sixth infrared detector F, and so on. The detection spectral ranges of each infrared detector are at least partially different, so that multi-band detection can be realized, and the spectral resolution and measurement accuracy are improved. In addition, as a plurality of infrared detectors are used, the spectrum chip can detect a plurality of targets at the same time, parallel processing is realized, and the detection speed and the data processing efficiency are improved.
Fig. 4 schematically illustrates a composition diagram of a multicolor imaging chip according to an embodiment of the disclosure.
Yet another aspect of the present disclosure provides a multicolor imaging chip, for example comprising: m pixels 8, M is a positive integer. Wherein each pixel 8 includes N infrared detectors of any of the embodiments of the present disclosure, N being a positive integer. And the detection spectral range of each infrared detector is at least partially different.
For example, as shown in fig. 4, a multicolor imaging chip includes:
m pixels, M being a positive integer, e.g. 1000. Each pixel is configured with N infrared detectors, where N is also a positive integer, for example 9, i.e., a first infrared detector a, a second infrared detector B, a third infrared detector C, a fourth infrared detector D, a fifth infrared detector E, a sixth infrared detector F, a seventh infrared detector G, an eighth infrared detector H, and a ninth infrared detector I. The detection spectral ranges of the 9 infrared detectors are at least partially different in each pixel. For example, the detection spectral range of the first infrared detector A is 500-800nm, the detection spectral range of the second infrared detector B is 800-1100nm, and so on.
Each pixel comprises a plurality of infrared detectors, the detection spectral ranges of the infrared detectors are at least partially different, multispectral imaging can be achieved, and the color richness and resolution of the image are improved. In addition, due to the fact that a plurality of infrared detectors are used, the multicolor imaging chip can acquire a plurality of spectrum information at the same time, and rapid and high-flux data acquisition and processing are achieved. The multicolor imaging chip has wide application prospect in the fields of biomedical imaging, environmental monitoring, safety inspection and the like.
It should be noted that, the spectrum chip and the multicolor imaging chip of the present disclosure each include a plurality of infrared detectors, and the quantum dot layer in the detectors may be prepared by an inkjet printing method.
Fig. 5 schematically illustrates a structural diagram of a fabrication process of an infrared light guide detector according to an embodiment of the present disclosure.
According to an embodiment of the present disclosure, as shown in fig. 5, the manufacturing process of the infrared light guide detector includes, for example:
substrate 1 preparation: a suitable substrate material, such as a silicon wafer having a silicon oxide layer on the surface, is selected and cleaned to remove surface impurities and contaminants.
Preparing a first electrode 5: the first electrode 5 is prepared on the substrate 1, and a titanium-gold laminated layer can be selected as an electrode material, and the electrode with the required shape and size is prepared through photoetching, etching, coating and other process technologies.
Preparing a second electrode 6: a second electrode 6 is prepared on the substrate 1, and a titanium-gold laminate can be selected as an electrode material, and an electrode with a required shape and size can be prepared through photoetching, etching, coating and other process technologies.
Growing a first infrared quantum dot layer 2: the first infrared quantum dot layer 2 is grown on the substrate 1 after the first electrode 5 and the second electrode 6 are prepared by adopting a chemical vapor deposition technology, and the growth conditions such as temperature, pressure, reaction gas flow and the like are controlled by using materials such as lead sulfide and the like so as to obtain the first infrared quantum dot layer 2 with the required structure and performance.
Growing a first dielectric layer 3: a first dielectric layer 3 is grown on the first infrared quantum dot layer 2, and an insulating material such as silicon nitride, silicon oxide, etc. can be selected to obtain a desired thickness and uniformity by controlling growth conditions.
Growing a second infrared quantum dot layer 4: the second infrared quantum dot layer 4 is continuously grown on the first dielectric layer 3, and the chemical vapor deposition technology is also adopted, so that the growth conditions are controlled to obtain the required structure and performance.
Growing a second dielectric layer 7: a second dielectric layer 7 is grown on the second infrared quantum dot layer 4, and an insulating material such as silicon oxide or the like is also selected, and the growth conditions are controlled to obtain the required thickness and uniformity.
Testing and packaging: and performing performance test on the prepared detector to ensure normal operation and perform necessary packaging protection.
Through the steps, the narrow-band infrared photoelectric detector with the structural characteristics can be prepared. The actual manufacturing process may vary depending on the particular material selection and equipment conditions.
Fig. 6 schematically illustrates a fabrication process structure variation diagram of an infrared photovoltaic detector according to an embodiment of the present disclosure.
According to an embodiment of the present disclosure, as shown in fig. 6, the process for manufacturing an infrared photovoltaic detector includes, for example:
substrate 1 preparation: a suitable substrate material, such as a silicon wafer having a silicon oxide layer on the surface, is selected and cleaned to remove surface impurities and contaminants.
Preparing a first electrode 5: the first electrode 5 is prepared on the substrate 1, and a titanium-gold laminated layer can be selected as an electrode material, and the electrode with the required shape and size is prepared through photoetching, etching, coating and other process technologies.
Growing a first infrared quantum dot layer 2: the first infrared quantum dot layer 2 is grown on the substrate 1 after the first electrode 5 is prepared by adopting a chemical vapor deposition technology, and the growth conditions such as temperature, pressure, reaction gas flow and the like are controlled by using materials such as lead sulfide and the like so as to obtain the first infrared quantum dot layer 2 with the required structure and performance.
Doping and modification: the first infrared quantum dot layer 2 is appropriately doped and surface-modified to improve the performance and stability of the detector. To realize the PN junction, different types of doping, such as p-type doping and n-type doping, are needed to be carried out on the upper surface and the lower surface of the quantum dot A film.
Preparing a second electrode 6: and preparing a second electrode 6 on the first infrared quantum dot layer 2, wherein ITO can be selected as an electrode material, and the electrode with the required shape and size can be prepared through photoetching, etching, coating and other process technologies.
Growing a first dielectric layer 3: the first dielectric layer 3 is grown on the second electrode 6, and an insulating material such as silicon nitride, silicon oxide, etc. may be selected to obtain a desired thickness and uniformity by controlling the growth conditions.
Growing a second infrared quantum dot layer 4: the second infrared quantum dot layer 4 is continuously grown on the first dielectric layer 3, and the chemical vapor deposition technology is also adopted, so that the growth conditions are controlled to obtain the required structure and performance.
Growing a second dielectric layer 7: a second dielectric layer 7 is grown on the second infrared quantum dot layer 4, and an insulating material such as silicon oxide or the like is also selected, and the growth conditions are controlled to obtain the required thickness and uniformity.
Testing and packaging: and performing performance test on the prepared detector to ensure normal operation and perform necessary packaging protection.
It will be appreciated that, in order to increase the quantum efficiency of the infrared photovoltaic detector, an electron transport layer and a hole transport layer may be prepared on the upper and lower surfaces of the first infrared quantum dot layer 2, respectively.
Through the steps, the narrow-band infrared photovoltaic detector with the structural characteristics can be prepared. The actual manufacturing process may vary depending on the particular material selection and equipment conditions.
In summary, embodiments of the present disclosure provide an infrared detector, a spectrum chip, and a polychromatic imaging chip. By arranging two infrared quantum dot layers with different quantum dot sizes, the narrow-band detection of infrared light can be realized, and the spectral resolution is improved. The infrared detector disclosed by the invention is simple and small in structure, easy to integrate in a large scale and can be used for manufacturing a spectrum chip and a multicolor imaging chip.
The details of the method embodiment are similar to those of the apparatus embodiment, please refer to the apparatus embodiment, and are not repeated here.
It should be understood that the specific order or hierarchy of steps in the processes disclosed are examples of exemplary approaches. Based on design preferences, it is understood that the specific order or hierarchy of steps in the processes may be rearranged without departing from the scope of the present disclosure. The accompanying method claims present elements of the various steps in a sample order, and are not meant to be limited to the specific order or hierarchy.
It should be further noted that the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only with reference to the directions of the drawings, and are not intended to limit the scope of the present disclosure. Like elements are denoted by like or similar reference numerals throughout the drawings. Conventional structures or constructions will be omitted when they may obscure the understanding of this disclosure. And the shape, size and position relation of each component in the figure do not reflect the actual size, proportion and actual position relation.
In the foregoing detailed description, various features are grouped together in a single embodiment for the purpose of streamlining the disclosure. This method of disclosure is not to be interpreted as reflecting an intention that the claimed embodiments of the subject matter require more features than are expressly recited in each claim. Rather, as the following claims reflect, the present disclosure is directed to less than all of the features of a single disclosed embodiment. Thus, the following claims are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate preferred embodiment of this disclosure.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present disclosure, the meaning of "a plurality" is at least two, such as two, three, etc., unless explicitly specified otherwise. As used in the specification or claims, the term "comprising" is intended to be inclusive in a manner similar to the term "comprising" as "comprising," as "comprising" is interpreted when employed as a transitional word in a claim. Any use of the term "or" in the specification of the claims is intended to mean "non-exclusive or".
While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be understood that the foregoing embodiments are merely illustrative of the invention and are not intended to limit the invention, and that any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.
Claims (10)
1. An infrared detector, comprising:
a substrate, a first infrared quantum dot layer, a first dielectric layer and a second infrared quantum dot layer which are sequentially overlapped;
a first electrode and a second electrode;
the first electrode and the second electrode are arranged on the same side or opposite sides of the first infrared quantum dot layer, and the first electrode is in contact with the substrate;
the first infrared quantum dot layer is internally provided with first quantum dots, and the second infrared quantum dot layer is internally provided with second quantum dots;
the first quantum dots and the second quantum dots are used for absorbing infrared light; and
the first quantum dot has a size greater than the second quantum dot.
2. The infrared detector of claim 1, wherein the size of the first quantum dot and the size of the second quantum dot range from 2nm to 10nm;
the first quantum dots are of a core structure, and the second quantum dots are of a core-shell structure;
the first quantum dots and the second quantum dots are made of the same material, and the material of the first quantum dots is lead sulfide or mercury telluride.
3. The infrared detector of claim 2, wherein the first infrared quantum dot layer has a thickness in the range of 50nm to 1000nm and the second infrared quantum dot layer has a thickness in the range of 100nm to 50000nm.
4. The infrared detector as set forth in claim 3, further comprising:
the second dielectric layer is arranged on one side of the second infrared quantum dot layer, which is far away from the substrate;
the second dielectric layer and the first dielectric layer are both insulating materials, and the insulating materials comprise parylene, silicon oxide, silicon nitride and aluminum oxide;
the thickness range of the first dielectric layer is 10 nm-50 nm, and the thickness range of the second dielectric layer is 50 nm-200 nm.
5. The infrared detector of claim 4, wherein the substrate is a silicon substrate or a CMOS chip;
when the substrate is a silicon substrate, a silicon oxide layer is arranged on the surface of one side of the silicon substrate, which is close to the first infrared quantum dot layer.
6. The infrared detector of claim 5, wherein the first electrode and the second electrode are disposed on a same side of the first infrared quantum dot layer;
the first electrode and the second electrode are made of titanium-gold lamination, and titanium is arranged on one side close to the substrate.
7. The infrared detector as set forth in claim 5, wherein the first electrode and the second electrode are disposed on opposite sides of the first infrared quantum dot layer, and two opposite surfaces of the first infrared quantum dot layer are different types of doped surfaces to form a PN junction;
the first electrode is made of titanium-gold lamination, and titanium is arranged on one side close to the substrate; and
the second electrode is made of ITO, and the thickness range of the second electrode is 100 nm-1000 nm.
8. The infrared detector as set forth in claim 7, further comprising:
an electron transport layer and a hole transport layer;
the electron transport layer and the hole transport layer are arranged on opposite sides of the first infrared quantum dot layer and are used for promoting the transmission of photon-generated carriers.
9. A spectroscopic chip comprising a plurality of infrared detectors as claimed in any one of claims 1 to 8;
wherein the detection spectral range of each of the infrared detectors is at least partially different.
10. A multicolor imaging chip is characterized by comprising M pixels, wherein M is a positive integer;
wherein each pixel comprises N infrared detectors according to any one of claims 1 to 8, N being a positive integer; and
the detection spectral range of each of the infrared detectors is at least partially different.
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