CN117802482A - 一种碳碳化硅靶坯的前处理方法 - Google Patents
一种碳碳化硅靶坯的前处理方法 Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 117
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 238000002203 pretreatment Methods 0.000 title claims abstract description 37
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 114
- 238000004140 cleaning Methods 0.000 claims abstract description 61
- 238000005488 sandblasting Methods 0.000 claims abstract description 58
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 57
- 238000007747 plating Methods 0.000 claims abstract description 46
- 238000003466 welding Methods 0.000 claims abstract description 43
- 238000001035 drying Methods 0.000 claims abstract description 35
- 238000004544 sputter deposition Methods 0.000 claims abstract description 24
- 239000000126 substance Substances 0.000 claims abstract description 23
- 238000005238 degreasing Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000004576 sand Substances 0.000 claims description 61
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 39
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 26
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 26
- 230000004913 activation Effects 0.000 claims description 24
- 239000003921 oil Substances 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 238000005422 blasting Methods 0.000 claims description 11
- 238000001291 vacuum drying Methods 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 239000013527 degreasing agent Substances 0.000 claims description 5
- 238000005237 degreasing agent Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000013077 target material Substances 0.000 abstract description 7
- 239000000843 powder Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 19
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 230000008595 infiltration Effects 0.000 description 11
- 238000001764 infiltration Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000005219 brazing Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000000498 ball milling Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000004321 preservation Methods 0.000 description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
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- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
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- 239000004744 fabric Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
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- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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- B23K1/00—Soldering, e.g. brazing, or unsoldering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
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- B23K2103/00—Materials to be soldered, welded or cut
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Abstract
本发明提供了一种碳碳化硅靶坯的前处理方法,所述前处理方法包括如下步骤:碳碳化硅靶坯依次进行除油清洗、干燥、喷砂处理与化学镀镍;所述喷砂处理后碳碳化硅靶坯的焊接面粗糙度为9‑15μm。本发明提供的前处理方法,能够保证碳碳化硅靶坯的焊接面基本无浮粉,能够明显改善靶坯表面的掉粉现象,显著提高了焊接强度,使碳碳化硅靶坯与金属背板的焊接结合率≥97%,焊接强度≥5MPa,解决了碳碳化硅靶材在溅射过程中的脱焊问题。
Description
技术领域
本发明属于磁控溅射技术领域,涉及一种靶坯的前处理方法,尤其涉及一种碳碳化硅靶坯的前处理方法。
背景技术
焊接是连接靶坯和背板的常用方法,其中钎焊的操作简单、成本较低,是靶材焊接的首选方法。对于碳碳化硅靶坯来说,钎焊也是使用广泛的焊接方式,但由于碳碳化硅靶坯是由石墨与碳化硅混合形成的,其亲金属性较差且难以和金属材料浸润,引起其与金属背板之间的焊接强度不高,很容易在磁控溅射过程中出现脱焊现象。
CN113024255A公开了一种碳碳化硅复合粉末及其制备方法和应用,其中的制备方法包括如下步骤:(1)按照目标质量比例准备碳粉和碳化硅粉,并混合均匀,得到碳碳化硅混合粉;(2)将步骤(1)所述碳碳化硅混合粉与粘结剂、分散剂以及水混合均匀,得到碳碳化硅浆料;(3)将步骤(2)所述碳碳化硅浆料进行喷雾造粒,得到碳碳化硅复合粉末。其用于制备碳碳化硅靶材,能够保证碳碳化硅靶材的致密度以及靶材表面的均匀光滑。
CN113004040A公开了一种碳碳化硅靶材及其制备方法和用途,所述制备方法通过将碳粉和谈哈硅粉混合后,经两次球磨,并在二次球磨之间进行干燥处理,后续再经装模、烧结和冷却,得到碳碳化硅靶材。
而近年来,随着热敏打印、3D打印市场的扩展,对能够提高打印设备工作效率的碳碳化硅靶材的需求日益提高,为了保证碳碳化硅靶材能够顺利完成磁控溅射,需要提高碳碳化硅靶坯与金属背板的焊接强度。
但直接将碳碳化硅靶坯与金属背板进行钎焊焊接,焊接强度在0.1-0.5MPa左右,在磁控溅射中存在极大的脱焊几率,因此需要在焊接前对碳碳化硅靶坯进行前处理,以提高碳碳化硅靶坯与金属背板之间的焊接结合率以及焊接强度。
发明内容
针对现有技术存在的不足,本发明的目的在于提供一种碳碳化硅靶坯的前处理方法,所述前处理方法能够提高碳碳化硅靶坯与金属背板的焊接强度,从而提高碳碳化硅靶材的磁控溅射稳定性。
为达此目的,本发明采用以下技术方案:
本发明提供了一种碳碳化硅靶坯的前处理方法,所述前处理方法包括如下步骤:
碳碳化硅靶坯依次进行除油清洗、干燥、喷砂处理与化学镀镍;
所述喷砂处理后碳碳化硅靶坯的焊接面粗糙度为9-15μm,例如可以是9μm、10μm、11μm、12μm或15μm,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。
碳碳化硅靶坯为石墨与碳化硅的混合材料,虽然石墨的润滑性好,但其亲金属性较差,难以和金属材料浸润。本发明提供的前处理方法,通过对碳碳化硅靶坯进行除油清洗、干燥、喷砂处理以及化学镀镍,提高了碳碳化硅靶坯与金属背板,尤其提高了碳碳化硅靶坯与铜背板的钎焊焊接强度,使焊接结合率≥97%,焊接强度≥5MPa。
优选地,所述喷砂处理使用的砂粒包括第一砂粒与第二砂粒。
所述第一砂粒的粒径D50为0.25-0.5mm。
所述第二砂粒的粒径D50为0.08-0.12mm。
优选地,所述第一砂粒与第二砂粒的质量比为1:(5-10)。
优选地,所述喷砂处理的压力为2-5MPa。
优选地,所述喷砂处理为对碳碳化硅靶坯的溅射面进行喷砂处理。
优选地,所述化学镀镍包括依次进行的活化与镀镍。
优选地,所述活化为采用氢氟酸对碳碳化硅靶坯的溅射面进行活化。
优选地,所述氢氟酸的浓度为35-40wt%;
优选地,所述活化的时间为5-20min。
优选地,所述镀镍形成的镍层厚度为50-200μm。
优选地,所述除油清洗包括依次进行的超声波除油剂洗、水洗与超声波异丙醇洗。
优选地,所述干燥为真空干燥。
优选地,所述干燥的温度为50-100℃。
优选地,所述干燥的时间为50-70min。
作为本发明提供的前处理方法的优选技术方案,所述前处理方法包括如下步骤:
碳碳化硅靶坯依次进行除油清洗、干燥、喷砂处理与化学镀镍;
所述除油清洗包括依次进行的超声波除油剂洗、水洗与超声波异丙醇洗;
所述干燥为真空干燥,温度为50-100℃,时间为50-70min;
所述喷砂处理为对碳碳化硅靶坯的溅射面进行喷砂处理,喷砂处理后碳碳化硅靶坯的焊接面粗糙度为9-15μm;
所述喷砂处理使用的砂粒包括粒径D50为0.25-0.5mm的第一砂粒与粒径D50为0.08-0.12mm的第二砂粒;第一砂粒与第二砂粒的质量比为1:(5-10);
所述喷砂处理的压力为2-5MPa;
所述化学镀镍包括依次进行的活化与镀镍;
所述活化为采用浓度为35-40wt%的氢氟酸对碳碳化硅靶坯的溅射面进行活化5-20min;
所述镀镍形成的镍层厚度为50-200μm。
本发明所述的数值范围不仅包括上述例举的点值,还包括没有例举出的上述数值范围之间的任意的点值,限于篇幅及出于简明的考虑,本发明不再穷尽列举所述范围包括的具体点值。
与现有技术相比,本发明的有益效果为:
碳碳化硅靶坯为石墨与碳化硅的混合材料,虽然石墨的润滑性好,但其亲金属性较差,难以和金属材料浸润;本发明提供的前处理方法,通过对碳碳化硅靶坯进行除油清洗、干燥、喷砂处理以及化学镀镍,提高了碳碳化硅靶坯与金属背板,尤其提高了碳碳化硅靶坯与铜背板的钎焊焊接强度,使焊接结合率≥97%,焊接强度≥5MPa。
具体实施方式
下面通过具体实施方式来进一步说明本发明的技术方案。
本发明提供了一种碳碳化硅靶坯的前处理方法,所述前处理方法包括如下步骤:
碳碳化硅靶坯依次进行除油清洗、干燥、喷砂处理与化学镀镍;
所述喷砂处理后碳碳化硅靶坯的焊接面粗糙度为9-15μm,例如可以是9μm、10μm、11μm、12μm或15μm,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。
碳碳化硅靶坯为石墨与碳化硅的混合材料,虽然石墨的润滑性好,但其亲金属性较差,难以和金属材料浸润。本发明提供的前处理方法,通过对碳碳化硅靶坯进行除油清洗、干燥、喷砂处理以及化学镀镍,提高了碳碳化硅靶坯与金属背板,尤其提高了碳碳化硅靶坯与铜背板的钎焊焊接强度,使焊接结合率≥97%,焊接强度≥5MPa。
在某些实施例中,所述喷砂处理使用的砂粒包括第一砂粒与第二砂粒。
所述第一砂粒的粒径D50为0.25-0.5mm,例如可以是0.25mm、0.3mm、0.35mm、0.4mm、0.45mm或0.5mm,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。
所述第二砂粒的粒径D50为0.08-0.12mm,例如可以是0.08mm、0.09mm、0.1mm、0.11mm或0.12mm,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。
本发明通过在喷砂处理时使用特定粒径的第一砂粒与第二砂粒,提高了所得溅射面的均匀性,使其与化学镀镍形成的镍层结合力更高,进而提高了前处理之后,碳碳化硅靶坯与铜背板的钎焊强度。
在某些实施例中,所述第一砂粒与第二砂粒的质量比为1:(5-10),例如可以是1:5、1:6、1:8、1:9或1:10,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。
在某些实施例中,所述喷砂处理的压力为2-5MPa,例如可以是2MPa、3MPa、4MPa或5MPa,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。
本发明不对喷砂处理的具体是时间进行限定,只要使最终所得碳碳化硅靶坯的溅射面粗糙度为9-15μm即可。
在某些实施例中,所述喷砂处理为对碳碳化硅靶坯的溅射面进行喷砂处理。
在某些实施例中,所述化学镀镍包括依次进行的活化与镀镍。
在某些实施例中,所述活化为采用氢氟酸对碳碳化硅靶坯的溅射面进行活化。
在某些实施例中,所述氢氟酸的浓度为35-40wt%,例如可以是35wt%、36wt%、38wt%、39wt%或40wt%,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。
在某些实施例中,所述活化的时间为5-20min,例如可以是5min、8min、10min、12min、15min、18min或20min,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。
在某些实施例中,所述镀镍形成的镍层厚度为50-200μm,例如可以是50μm、80μm、100μm、120μm、150μm、160μm、180μm或200μm,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。
在某些实施例中,所述除油清洗包括依次进行的超声波除油剂洗、水洗与超声波异丙醇洗。
本发明不对除油剂的具体组成进行限定,只要能够实现碳碳化硅靶坯的表面除油即可,示例性的,所述除油剂包括碱性物质以及表面活性剂。
在某些实施例中,所述干燥为真空干燥。
在某些实施例中,所述干燥的温度为50-100℃,例如可以是50℃、60℃、80℃、90℃或100℃,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。
在某些实施例中,所述干燥的时间为50-70min,例如可以是50min、55min、60min、65min或70min,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。
本发明通过干燥去除除油清洗后碳碳化硅靶坯表面残留的水分与异丙醇。
作为本发明提供的前处理方法的优选技术方案,所述前处理方法包括如下步骤:
碳碳化硅靶坯依次进行除油清洗、干燥、喷砂处理与化学镀镍;
所述除油清洗包括依次进行的超声波除油剂洗、水洗与超声波异丙醇洗;
所述干燥为真空干燥,温度为50-100℃,时间为50-70min;
所述喷砂处理为对碳碳化硅靶坯的溅射面进行喷砂处理,喷砂处理后碳碳化硅靶坯的焊接面粗糙度为9-15μm;
所述喷砂处理使用的砂粒包括粒径D50为0.25-0.5mm的第一砂粒与粒径D50为0.08-0.12mm的第二砂粒;第一砂粒与第二砂粒的质量比为1:(5-10);
所述喷砂处理的压力为2-5MPa;
所述化学镀镍包括依次进行的活化与镀镍;
所述活化为采用浓度为35-40wt%的氢氟酸对碳碳化硅靶坯的溅射面进行活化5-20min;
所述镀镍形成的镍层厚度为50-200μm。
为了清楚说明本发明前处理方法的技术方案,本发明具体实施方式中处理的碳碳化硅靶坯采用如下制备方法得到:
(a)按质量比45:55混合粒径小于20μm的碳粉和粒径小于10μm的碳化硅粉,在密封条件中于乙醇环境下经碳化硅球进行第一球磨,第一球磨的时间为48h,料球比为2:1,得到第一混合料;
(b)步骤(a)所得第一混合料经120℃烘干12h后,再与乙醇和甘油混合,乙醇的加入量为第一混合料的0.5wt%,甘油的加入量为第一混合料的1wt%,在密封条件中经碳化硅球进行第二球磨,第二球磨的时间为48h,球磨后的物料经过筛,得到第二混合料,第二混合料的粒径范围为120-160μm;
(c)步骤(b)所得第二混合料装入石墨模具中,第二混合料外选用密实碳纤维布包裹后压实,保障装模后第二混合料表面的平面度为0.35mm以下,再将模具放入真空烧结炉内,放置后保证模具水平,人工对模具施加压力进行冷压至无法压动位置,冷压后用60min抽真空至绝对真空度降至90Pa以下,停止抽真空,对真空烧结炉内填充氩气值表压为-0.09MPa,停止填充氩气,在氩气填充同时,以10℃/min第一升温至1450℃;
再以5℃/min第二升温至1800℃,进行第二保温60min;在升温至1800℃后第二保温的同时,马上在20min内第二升压至8MPa,保压至第二保温结束;
继续以3℃/min第三升温至2000℃,在所述第三升温过程中进行抽真空至第三升温结束,真空度抽至绝对真空度降至100Pa以下;保持2000℃并在60min内第三升压至35MPa后,进行第三保温180min;第三保温结束后,停止加热,降温至1800℃,泄压,通入氩气并随炉冷却至100℃,取出,经磨加工、线切割等方式加工至要求尺寸,得到碳碳化硅靶坯。
实施例1
本实施例提供了一种碳碳化硅靶坯的前处理方法,所述前处理方法包括如下步骤:
碳碳化硅靶坯依次进行除油清洗、干燥、喷砂处理与化学镀镍;
所述除油清洗包括依次进行的超声波除油剂洗、水洗与超声波异丙醇洗;
所述干燥为真空干燥,温度为80℃,时间为60min;
所述喷砂处理为对碳碳化硅靶坯的溅射面进行喷砂处理,喷砂处理后碳碳化硅靶坯的焊接面粗糙度为12μm;
所述喷砂处理使用的砂粒包括粒径D50为0.35mm的第一砂粒与粒径D50为0.1mm的第二砂粒;第一砂粒与第二砂粒的质量比为1:8;
所述喷砂处理的压力为3MPa;
所述化学镀镍包括依次进行的活化与镀镍;
所述活化为采用浓度为38wt%的氢氟酸对碳碳化硅靶坯的溅射面进行活化10min;
所述镀镍形成的镍层厚度为150μm。
实施例2
本实施例提供了一种碳碳化硅靶坯的前处理方法,所述前处理方法包括如下步骤:
碳碳化硅靶坯依次进行除油清洗、干燥、喷砂处理与化学镀镍;
所述除油清洗包括依次进行的超声波除油剂洗、水洗与超声波异丙醇洗;
所述干燥为真空干燥,温度为50℃,时间为70min;
所述喷砂处理为对碳碳化硅靶坯的溅射面进行喷砂处理,喷砂处理后碳碳化硅靶坯的焊接面粗糙度为10μm;
所述喷砂处理使用的砂粒包括粒径D50为0.25mm的第一砂粒与粒径D50为0.08mm的第二砂粒;第一砂粒与第二砂粒的质量比为1:5;
所述喷砂处理的压力为2MPa;
所述化学镀镍包括依次进行的活化与镀镍;
所述活化为采用浓度为35wt%的氢氟酸对碳碳化硅靶坯的溅射面进行活化20min;
所述镀镍形成的镍层厚度为100μm。
实施例3
本实施例提供了一种碳碳化硅靶坯的前处理方法,所述前处理方法包括如下步骤:
碳碳化硅靶坯依次进行除油清洗、干燥、喷砂处理与化学镀镍;
所述除油清洗包括依次进行的超声波除油剂洗、水洗与超声波异丙醇洗;
所述干燥为真空干燥,温度为100℃,时间为50min;
所述喷砂处理为对碳碳化硅靶坯的溅射面进行喷砂处理,喷砂处理后碳碳化硅靶坯的焊接面粗糙度为14μm;
所述喷砂处理使用的砂粒包括粒径D50为0.5mm的第一砂粒与粒径D50为0.12mm的第二砂粒;第一砂粒与第二砂粒的质量比为1:10;
所述喷砂处理的压力为5MPa;
所述化学镀镍包括依次进行的活化与镀镍;
所述活化为采用浓度为40wt%的氢氟酸对碳碳化硅靶坯的溅射面进行活化5min;
所述镀镍形成的镍层厚度为200μm。
实施例4
本实施例提供了一种碳碳化硅靶坯的前处理方法,除了喷砂处理仅使用粒径D50为0.35mm的第一砂粒外,其余均与实施例1相同。
实施例5
本实施例提供了一种碳碳化硅靶坯的前处理方法,除了喷砂处理仅使用粒径D50为0.1mm的第二砂粒外,其余均与实施例1相同。
实施例6
本实施例提供了一种碳碳化硅靶坯的前处理方法,除了第一砂粒与第二砂粒的质量比为1:3外,其余均与实施例1相同。
实施例7
本实施例提供了一种碳碳化硅靶坯的前处理方法,除了第一砂粒与第二砂粒的质量比1:12外,其余均与实施例1相同。
对比例1
本对比例提供了一种碳碳化硅靶坯的前处理方法,所述前处理方法包括如下步骤:
碳碳化硅靶坯依次进行除油清洗、干燥与化学镀镍;
所述除油清洗包括依次进行的超声波除油剂洗、水洗与超声波异丙醇洗;
所述干燥为真空干燥,温度为80℃,时间为60min;
所述化学镀镍包括依次进行的活化与镀镍;
所述活化为采用浓度为38wt%的氢氟酸对碳碳化硅靶坯的溅射面进行活化10min;
所述镀镍形成的镍层厚度为150μm。
对比例2
本对比例提供了一种碳碳化硅靶坯的前处理方法,所述前处理方法包括如下步骤:
碳碳化硅靶坯依次进行除油清洗、干燥与喷砂处理;
所述除油清洗包括依次进行的超声波除油剂洗、水洗与超声波异丙醇洗;
所述干燥为真空干燥,温度为80℃,时间为60min;
所述喷砂处理为对碳碳化硅靶坯的溅射面进行喷砂处理,喷砂处理后碳碳化硅靶坯的焊接面粗糙度为12μm;
所述喷砂处理使用的砂粒包括粒径D50为0.35mm的第一砂粒与粒径D50为0.1mm的第二砂粒;第一砂粒与第二砂粒的质量比为1:8;
所述喷砂处理的压力为3MPa。
性能表征
对实施例1-7以及对比例1-2前处理后的碳碳化硅靶坯与铜背板的钎焊强度与钎焊结合率进行测试,所得结果如表1所示。
首先将碳碳化硅靶坯与铜背板组成碳碳化硅靶材:
浸润处理铜背板的焊接面以及碳碳化硅靶坯的焊接面,得到浸润背板与浸润靶材;所述浸润处理包括依次进行的升温、保温以及超声波浸润;升温的速率为12℃/min,终点温度为180℃;保温的时间为10min;超声波浸润的频率为30kHz;超声波浸润镀膜靶材的焊接面的时间为20min;超声波浸润铜背板的焊接面的时间为12min;所述铜背板在浸润处理之前,采用钢刷对铜背板的焊接面进行表面处理
0.4MPa扣合步骤所得浸润背板与浸润靶材,自然冷却,实现碳碳化硅靶坯的针焊;所述自然冷却过程中,降温至115℃时,去除多余焊料。
其中,焊接结合率的测试采用水浸式超声波探伤仪进行,焊接强度采用压力机进行。
表1
综上所述,碳碳化硅靶坯为石墨与碳化硅的混合材料,虽然石墨的润滑性好,但其亲金属性较差,难以和金属材料浸润;本发明提供的前处理方法,通过对碳碳化硅靶坯进行除油清洗、干燥、喷砂处理以及化学镀镍,提高了碳碳化硅靶坯与金属背板,尤其提高了碳碳化硅靶坯与铜背板的钎焊焊接强度,使焊接结合率≥97%,焊接强度≥5MPa。
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种碳碳化硅靶坯的前处理方法,其特征在于,所述前处理方法包括如下步骤:
碳碳化硅靶坯依次进行除油清洗、干燥、喷砂处理与化学镀镍;
所述喷砂处理后碳碳化硅靶坯的焊接面粗糙度为9-15μm。
2.根据权利要求1所述的前处理方法,其特征在于,所述喷砂处理使用的砂粒包括第一砂粒与第二砂粒;
所述第一砂粒的粒径D50为0.25-0.5mm;
所述第二砂粒的粒径D50为0.08-0.12mm。
3.根据权利要求2所述的前处理方法,其特征在于,所述第一砂粒与第二砂粒的质量比为1:(5-10);
优选地,所述喷砂处理的压力为2-5MPa。
4.根据权利要求1-3任一项所述的前处理方法,其特征在于,所述喷砂处理为对碳碳化硅靶坯的溅射面进行喷砂处理。
5.根据权利要求1-4任一项所述的前处理方法,其特征在于,所述化学镀镍包括依次进行的活化与镀镍。
6.根据权利要求5所述的前处理方法,其特征在于,所述活化为采用氢氟酸对碳碳化硅靶坯的溅射面进行活化;
优选地,所述氢氟酸的浓度为35-40wt%;
优选地,所述活化的时间为5-20min。
7.根据权利要求5或6所述的前处理方法,其特征在于,所述镀镍形成的镍层厚度为50-200μm。
8.根据权利要求1-7任一项所述的前处理方法,其特征在于,所述除油清洗包括依次进行的超声波除油剂洗、水洗与超声波异丙醇洗。
9.根据权利要求1-8任一项所述的前处理方法,其特征在于,所述干燥为真空干燥;
优选地,所述干燥的温度为50-100℃;
优选地,所述干燥的时间为50-70min。
10.根据权利要求1所述的前处理方法,其特征在于,所述前处理方法包括如下步骤:
碳碳化硅靶坯依次进行除油清洗、干燥、喷砂处理与化学镀镍;
所述除油清洗包括依次进行的超声波除油剂洗、水洗与超声波异丙醇洗;
所述干燥为真空干燥,温度为50-100℃,时间为50-70min;
所述喷砂处理为对碳碳化硅靶坯的溅射面进行喷砂处理,喷砂处理后碳碳化硅靶坯的焊接面粗糙度为9-15μm;
所述喷砂处理使用的砂粒包括粒径D50为0.25-0.5mm的第一砂粒与粒径D50为0.08-0.12mm的第二砂粒;第一砂粒与第二砂粒的质量比为1:(5-10);
所述喷砂处理的压力为2-5MPa;
所述化学镀镍包括依次进行的活化与镀镍;
所述活化为采用浓度为35-40wt%的氢氟酸对碳碳化硅靶坯的溅射面进行活化5-20min;
所述镀镍形成的镍层厚度为50-200μm。
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