CN117801804A - Composite material, composition, preparation method of composite material, light-emitting diode and display device - Google Patents

Composite material, composition, preparation method of composite material, light-emitting diode and display device Download PDF

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Publication number
CN117801804A
CN117801804A CN202211152919.3A CN202211152919A CN117801804A CN 117801804 A CN117801804 A CN 117801804A CN 202211152919 A CN202211152919 A CN 202211152919A CN 117801804 A CN117801804 A CN 117801804A
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quantum dots
mxene
composition
composite material
composite
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林雄风
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TCL Technology Group Co Ltd
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TCL Technology Group Co Ltd
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Priority to CN202211152919.3A priority Critical patent/CN117801804A/en
Priority to PCT/CN2023/118855 priority patent/WO2024061102A1/en
Publication of CN117801804A publication Critical patent/CN117801804A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
    • C09K11/68—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
    • C09K11/69—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing vanadium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays

Abstract

The application discloses a composite material, a composition, a preparation method of the composite material, a light-emitting diode and a display device, wherein the composite material comprises quantum dots and Mxene materials, and the quantum dots are embedded in gaps between adjacent Mxene materials. The composite material comprises quantum dots and Mxene materials in sheet structures, and because the surfaces of the Mxene materials are negatively charged, part of the quantum dots embedded in gaps between adjacent Mxene materials are in contact with the surfaces of the Mxene materials, so that the surfaces of the part of the quantum dots are negatively charged, and the composite material has the characteristic of repelling electrons.

Description

Composite material, composition, preparation method of composite material, light-emitting diode and display device
Technical Field
The present disclosure relates to the field of semiconductors, and more particularly, to a composite material, a composition, a method for preparing the same, a light emitting diode, and a display device.
Background
The light emitting diode comprises a cathode, an anode and a light emitting layer positioned between the anode and the cathode, electrons and holes are respectively injected from the cathode and the anode under the drive of an external electric field, the electrons and the holes are combined to form excitons, and the excitons radiate and emit light. The balance between electron injection and hole injection has an effect on the light emission efficiency of a quantum dot light emitting diode (QLED). And the balance of electron injection and hole injection is related to the material from which the light-emitting layer is made.
Disclosure of Invention
In view of the above, the present application provides a composite material, a composition, a preparation method thereof, a light emitting diode and a display device, and the technical solution provided by the present application aims to provide a novel composite material, wherein the composite material has the characteristic of electron repellency.
The embodiment of the application is realized in the following way:
in a first aspect, the present application provides a composite material comprising quantum dots and Mxene material, the Mxene material being in the form of a sheet, the quantum dots being embedded in gaps between adjacent Mxene materials.
In some embodiments, adjacent Mxene materials are layered and spaced apart from one another to form a gap space in which at least a portion of the quantum dots are embedded.
In some embodiments, the composite material is composed of quantum dots and Mxene material.
In some embodiments, the Mxene material has the chemical formula M n+1 X n T x M is at least one of transition metals, X is C or N, N is 1-3, T x Comprising O 2- 、OH - 、F - At least one of (a) and (b); or,
the Mxene material comprises Ti 2 CT x 、TiNbCT x 、Ti 3 CN x T x 、Ta 4 C 3 T x 、Nb 2 CT x 、V 2 CT x 、Nb 4 C 3 T x 、Mo 2 CT x 、Ti 4 N 3 T x At least one of (1), wherein T x Comprising O 2- 、OH - 、F - At least one of them.
In some embodiments, the weight ratio of the Mxene material to the quantum dots in the composite material is (0.5-5): 10-60.
In some embodiments, the quantum dot is selected from at least one of a single structure quantum dot selected from at least one of a group II-VI compound selected from at least one of CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe and HgZnSTe, a group IV-VI compound selected from at least one of SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe, snPbSTe, a group III-VI compound selected from at least one of GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs and InAlPSb, a group III-V compound selected from CuInS, and a perovskite-type semiconductor material 2 、CuInSe 2 AgInS 2 The perovskite semiconductor material comprises at least one of a doped or undoped inorganic perovskite semiconductor and a doped or undoped organic-inorganic hybrid perovskite semiconductor, and the structural general formula of the inorganic perovskite semiconductor is AMX 3 The organic-inorganic hybrid perovskite semiconductor has the following structureIs BMX 3 Wherein A is Cs + M is a divalent metal cation, X is a halogen anion, B is an organic amine cation comprising CH 3 (CH 2 ) n-2 NH 3 + (n.gtoreq.2) or NH 3 (CH 2 ) n NH 3 2+ (n is more than or equal to 2); the core of the quantum dot with the core-shell structure is selected from any one of the quantum dots with the single structure, and the shell material of the quantum dot with the core-shell structure is selected from at least one of CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS and ZnS.
In a second aspect, the present application provides a composition comprising a solvent and a composite as described above.
In some embodiments, the solvent comprises at least one of octane, toluene, carbon tetrachloride, n-hexane, cyclohexane, heptane, and liquid paraffin; and/or the number of the groups of groups,
in the composition, the concentration of the Mxene material is 0.5-5 mg/mL; and/or the number of the groups of groups,
in the composition, the concentration of the quantum dots is 10-60 mg/mL.
In a third aspect, the present application provides a method of preparing a composition comprising the steps of:
providing quantum dots, mxene material and a solvent;
and dispersing the quantum dots and the Mxene material in the solvent to obtain a composition.
In some embodiments, the step of dispersing the quantum dots, the Mxene material, in the solvent is performed under ultrasonic conditions;
the power of the ultrasonic wave is 1-3W/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the And/or the ultrasonic treatment time is 5-30 min.
In some embodiments, the step of dispersing the quantum dots, the Mxene material, in the solvent is performed under stirring conditions;
the stirring speed is 200-1000 rpm; and/or stirring for 5-8 h.
In a fourth aspect, the present application proposes a light emitting diode comprising a stack of an anode, a light emitting layer and a cathode, the material of the light emitting layer comprising a composite material as described above, or the light emitting layer being made of a composition comprising a composition as described above, or the composition being made by a method of preparation as described above.
In some embodiments, the anode and the cathode are each independently selected from a metal electrode, a carbon-silicon material electrode, a metal oxide electrode, or a composite electrode, wherein the metal electrode is selected from at least one of Ag, al, mg, au, cu, mo, pt, ca and Ba, the carbon-silicon material electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene, and carbon fibers, the metal oxide electrode is selected from at least one of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide, and the composite electrode is selected from AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, tiO/Al/ZnO 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 ZnS/Ag/ZnS or ZnS/Al/ZnS.
In a fifth aspect, the present application also proposes a display device comprising a light emitting diode as described above.
The beneficial effects are that:
the technical scheme provides a composite material, the composite material includes quantum dot and Mxene material that is sheet structure, because Mxene material self surface is negatively charged, inlays and establishes partial quantum dot and Mxene material's surface contact in the clearance between the adjacent Mxene material for the surface of this partial quantum dot is negatively charged, thereby makes composite material has the characteristic of repellent electron.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a light emitting diode according to an embodiment of the present application;
FIG. 2 is a schematic view of a light emitting diode according to another embodiment of the present application;
FIG. 3 is a schematic flow chart of a method of preparing a composition according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, based on the embodiments herein, which are within the scope of the protection of the present application, will be within the skill of the art without inventive effort. Furthermore, it should be understood that the detailed description is presented herein for purposes of illustration and explanation only and is not intended to limit the present application. In this application, unless otherwise indicated, terms of orientation such as "upper" and "lower" are used specifically to refer to the orientation of the drawing in the figures. In addition, in the description of the present application, the term "comprising" means "including but not limited to". Various embodiments of the invention may exist in a range of forms; it should be understood that the description in a range format is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the invention; it is therefore to be understood that the range description has specifically disclosed all possible sub-ranges and individual values within that range. For example, it should be considered that a description of a range from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5, and 6, wherever applicable. In addition, whenever a numerical range is referred to herein, it is meant to include any reference number (fractional or integer) within the indicated range.
In the present application, "and/or" describing the association relationship of the association object means that there may be three relationships, for example, a and/or B may mean: a alone, a and B together, and B alone. Wherein A, B may be singular or plural.
In this application, "at least one" means one or more, and "a plurality" means two or more. "at least one", "at least one" or the like refer to any combination of these items, including any combination of single item(s) or plural items(s). For example, "at least one (individual) of a, b, or c," or "at least one (individual) of a, b, and c," may each represent: a, b, c, a-b (i.e., a and b), a-c, b-c, or a-b-c, wherein a, b, c may be single or multiple, respectively.
The technical scheme of the application is implemented as follows:
in a first aspect, the present application proposes a composite material, the composite material includes quantum dots 1 and Mxene materials 2, the Mxene materials 2 are in a sheet shape, and the quantum dots 1 are embedded in gaps between adjacent Mxene materials 2.
According to the technical scheme, the composite material comprises quantum dots 1 and Mxene materials 2, and as the Mxene materials 2 are in a flaky shape, as shown in fig. 1 and 2, in the mixing and stacking process, the Mxene materials 2 form a layered-like structure, and at least a part of the quantum dots 1 are embedded into gaps between adjacent Mxene materials 2. And, since the surface of the Mxene material 2 itself is negatively charged, the quantum dot 1 embedded in the gap between adjacent Mxene materials 2 is in contact with the surface of the Mxene material 2, so that the surface of the quantum dot 1 is negatively charged, and the composite material has the characteristic of repelling electrons. When the light-emitting layer 20 of the light-emitting diode 100 is manufactured by using the composite material, the light-emitting layer 20 with negative surface generates attractive force to positively charged holes under the action of coulomb force, so that the hole injection barrier is reduced, the injection of holes is promoted, and meanwhile, the electron injection barrier is increased due to the rejection of electrons by the negative surface of the quantum dot 1, and the injection of electrons is reduced, so that the regulation and control of the charge balance of the device are realized.
In some embodiments, two adjacent Mxene materials 2 are stacked, the two Mxene materials 2 face-to-face and are spaced apart from each other, thereby defining a interstitial space therebetween, at least a portion of the quantum dots 1 being embedded in the interstitial space and abutting the faces of the two Mxene materials 2.
In a specific embodiment, the composite material consists of quantum dots 1 and Mxene material 2.
In some embodiments, the Mxene material 2 has the chemical formula M n+1 X n T x M is at least one of transition metals, X is C or N, N is 1-3, T x Comprising O 2- 、OH - 、F - Any one or more of the following. Wherein the transition metal may be selected from one or more of any transition metal elements known in the art, e.g., ti, zr, hf, V, nb, ta, cr, sc, etc.; t (T) x Refers to groups on the surface of a two-dimensional material. All the two-dimensional materials meeting the chemical general formula can be combined with the quantum dots 1 to form the composite material, and the formed composite material has good effect of improving the charge balance of the device when being used for manufacturing the luminescent layer 20 of the light-emitting diode 100, and can greatly improve the luminous efficiency and the service life of the device.
In other embodiments, the Mxene material 2 may be selected from, but is not limited to, ti 2 CT x 、TiNbCT x 、Ti 3 CN x T x 、Ta 4 C 3 T x 、Nb 2 CT x 、V 2 CT x 、Nb 4 C 3 T x 、Mo 2 CT、Ti 4 N 3 T x At least one of (1), wherein T x Comprising O 2- 、OH - 、F - At least one of them. When the Mxene material 2 is used to manufacture the light-emitting layer 20 of the light-emitting diode 100, the effect of improving the charge balance of the device is better, and the light-emitting efficiency and the service life of the device can be greatly improved.
The quantum dot 1 may be selected from, but not limited to, at least one of a single structure quantum dot and a core-shell structure quantum dot. For example, the single structure quantum dot is selected from group II-VI compound, group IV-VI compound, group III-V compound, and group I-III-VI compoundAt least one of a compound and a perovskite type semiconductor material, wherein the II-VI compound is selected from at least one of CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe and HgZnSTe, the IV-VI compound is selected from at least one of SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe, snPbSTe, the III-V compound is selected from at least one of GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs and InAlPSb, and the I-III-VI compound is selected from CuInS 2 、CuInSe 2 AgInS 2 The perovskite semiconductor material comprises at least one of a doped or undoped inorganic perovskite semiconductor and a doped or undoped organic-inorganic hybrid perovskite semiconductor, and the structural general formula of the inorganic perovskite semiconductor is AMX 3 The organic-inorganic hybrid perovskite semiconductor has a structural general formula of BMX 3 Wherein A is Cs + M is a divalent metal cation including, but not limited to Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ X is a halogen anion including but not limited to Cl - 、Br - 、I - B is an organic amine cation comprising CH 3 (CH 2 ) n-2 NH 3 + (n.gtoreq.2) or NH 3 (CH 2 ) n NH 3 2+ (n2); the core of the quantum dot with the core-shell structure is selected from any one of the quantum dots with the single structure, and the shell material of the quantum dot with the core-shell structure is selected from at least one of CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS and ZnS.
In some embodiments of the present application, the weight ratio of the Mxene material 2 to the quantum dot 1 is (0.5-5): (10-60), for example, the weight ratio of the Mxene material 2 to the quantum dot 1 may be (0.5-1): (10-20), (0.5-1): (15-30), (0.5-5): (20-35), (0.5-5): (32-45), (0.5-5): (40-60), (1-3): (50-60), (2-4): (20-40), (3-5): (30-50), and so on, where not only the concentration of the Mxene material 2 can be maximally increased, the hole injection can be increased, the electron injection can be reduced, but also the agglomeration can be avoided, and the quantum dot 1 can be ensured to be smoothly embedded between two adjacent layers of Mxene material 2; at the same time, a sufficient quantum dot 1 content can be ensured, so that the manufactured light emitting diode 100 has a high luminous efficiency.
In a second aspect, the present application also proposes a composition comprising a solvent and a composite as described above. The light emitting layer 20 of the light emitting diode 100 may be prepared using the composition.
Wherein the solvent may be any common solvent capable of dissolving the quantum dots 1 and the Mxene material 2, for example, at least one of nonpolar alkyl solvents. In a specific embodiment, the solvent may be at least one selected from the group consisting of octane, toluene, carbon tetrachloride, n-hexane, cyclohexane, heptane and liquid paraffin, and the quantum dots 1 and Mxene material 2 can be well dispersed by using the above solvent to form a liquid composition, which not only has good material dispersibility, but also facilitates the preparation of the light emitting layer 20 by a solution method.
In some embodiments, the concentration of the Mxene material 2 is 0.5-5 mg/mL, for example, the concentration of the Mxene material 2 can be 0.5mg/mL, 0.6mg/mL, 0.8mg/mL, 1mg/mL, 2mg/mL, 2.5mg/mL, 3mg/mL, 3.5mg/mL, 4mg/mL, 4.5mg/mL, 5mg/mL, values ranging between any two of the foregoing, and the like. In this range, the concentration of the Mxene material 2 can be improved to the greatest extent, hole injection is improved, electron injection is reduced, agglomeration can be avoided, and the quantum dots 1 can be smoothly embedded between two adjacent layers of Mxene material 2.
In some embodiments of the present application, the concentration of the quantum dot 1 in the composite material is 10-60 mg/ml, for example, the concentration of the quantum dot 1 may be 10mg/ml, 15mg/ml, 20mg/ml, 25mg/ml, 30mg/ml, 35mg/ml, 40mg/ml, 45mg/ml, 50mg/ml, 55mg/ml, 60mg/ml, and a value in a range between any two of the foregoing values, and the like, where the composite material is used for preparing the light emitting diode 100, which is helpful for improving the light emitting efficiency of the light emitting diode 100.
In a third aspect, the present application also provides a method of preparing a composition. Referring to fig. 3, the preparation method includes the steps of:
step S10, providing quantum dots 1, mxene material 2 and a solvent;
and step S20, dispersing the quantum dots 1 and the Mxene material 2 in the solvent to obtain a composition.
In step S20, in the implementation, the quantum dot 1 and the Mxene material 2 may be added into the solvent together, and then stirred and mixed uniformly; the solvent may be divided into two parts, the quantum dot 1 and the Mxene material 2 are dispersed in the two solvents, respectively, to prepare two mixed solutions, and then the two mixed solutions are mixed.
Wherein, the mixing mode comprises but is not limited to mechanical stirring, magnetic stirring, ultrasonic and other means.
In some embodiments, the step of dispersing the quantum dots 1, mxene material 2 in the solvent is performed under ultrasonic conditions. In specific implementation, the power of the ultrasonic wave is 1-3W/cm 2 For example, 1W/cm 2 、1.2W/cm 2 、1.5W/cm 2 、1.8W/cm 2 、2W/cm 2 、2.3W/cm 2 、2.5W/cm 2 、2.8W/cm 2 、3W/cm 2 And values in the range between any two values, etc., thus contributing to the improvement of the dispersion effect of the quantum dots 1 and Mxene material 2; time of ultrasoundFor example, 5 to 30min, such as 5min, 6min, 8min, 9min, 10min, 15min, 18min, 20min, 23min, 25min, 26min, 28min, 30min, and values in any range between any two values, etc., so that the quantum dots 1 and the Mxene material 2 can be fully dispersed in the solvent, and the quantum dots 1 can be conveniently inserted into gaps between adjacent two-dimensional material sheets.
In some embodiments, the step of dispersing the quantum dots 1, mxene material 2 in the solvent is performed under stirring conditions. In specific embodiments, the stirring speed is 200 to 1000rpm, for example, 200rpm, 300rpm, 400rpm, 500rpm, 600rpm, 700rpm, 800rpm, 900rpm, 1000rpm, a value in a range between any two of the above values, and the like; the stirring time is 5 to 8 hours, for example, 5 hours, 5.5 hours, 6 hours, 6.5 hours, 7 hours, 7.5 hours, 8 hours, and a value in a range between any two of the above values. In this way, the Mxene material 2 can be sufficiently dispersed in the solvent, thereby promoting insertion of the quantum dot 1 into the gap between adjacent Mxene material 2 sheets.
In a fourth aspect, the present application also proposes a light emitting diode 100, referring to fig. 1, the light emitting diode 100 includes a stacked anode 10, a light emitting layer 20, and a cathode 30. Wherein the material of the light emitting layer 20 comprises a composite material as described above, or wherein the light emitting layer 20 is made of a composition comprising a composition as described above, or wherein the composition is made by a preparation method as described above.
The anode 10 and the cathode 30 are known in the art as the anode 10 and the cathode 30 for the light emitting diode 100, and for example, may be independently selected from, but not limited to, a metal electrode, a carbon-silicon material electrode, a metal oxide electrode or a composite electrode, wherein the material of the metal electrode is selected from at least one of Ag, al, mg, au, cu, mo, pt, ca and Ba, the material of the carbon-silicon material electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene and carbon fibers, and the material of the metal oxide electrode is selected from at least one of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxideThe composite electrode is selected from AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, tiO 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 ZnS/Ag/ZnS or ZnS/Al/ZnS. Wherein "/" represents a stacked structure, for example, AZO/Ag/AZO represents a composite electrode having a stacked structure formed by sequentially stacking AZO layers, ag layers, and AZO layers.
Referring to fig. 2, it can be further understood that some functional layers for the light emitting diode 100, such as the hole transporting layer 50, the hole injecting layer 40, etc., may be added to the light emitting diode 100 to help improve the performance of the light emitting diode.
The material of the hole transport layer 50 may be a material known in the art for the hole transport layer 50, for example, may be selected from, but not limited to, poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine](PTAA), 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino]-9,9 '-spirobifluorene (spiro-omeTAD), 4' -cyclohexylbis [ N, N-bis (4-methylphenyl) aniline](TAPC), N ' -bis (1-naphthyl) -N, N ' -diphenyl-1, 1' -diphenyl-4, 4' -diamine (NPB), 4' -bis (N-carbazole) -1,1' -biphenyl (CBP), poly [ (9, 9-dioctylfluorenyl-2, 7-diyl) -co- (4, 4' - (N- (p-butylphenyl)) diphenylamine](TFB), poly (9-vinylcarbazole) (PVK), polytrianiline (Poly-TPD), 4 '-tris (carbazol-9-yl) triphenylamine (TCTA), N' -diphenyl-N, N '-bis (3-methylphenyl) -1,1' -biphenyl-4, 4 '-diamine (TPD), N, N' -bis (3-methylphenyl) -N, N '-diphenyl-9, 9-spirobifluorene-2, 7-diamine (Spiro-TPD), N' -di-1-naphthyl-N, N '-diphenyl-9, 9' -spirodi [ 9H-fluorene]-2, 7-diamine (Spiro-NPB), moO 3 、WO 3 、NiO、V 2 O 5 CuO, P-type gallium nitride and CrO 3 At least one of them.
The material of the hole injection layer 40 may be a material known in the art for the hole injection layer 40, such as may be selected from, but not limited to, poly (ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS), poly (9, 9-dioctyl-fluorene-co-N- (4-butylphenyl) -diphenylamine) (TFB), polyarylamines, poly (N-vinylcarbazole), polyaniline, polypyrrole, N, N, N ', N ' -tetrakis (4-methoxyphenyl) -benzidine (TPD), 4-bis [ N- (1-naphthyl) -N-phenyl-amino ] biphenyl (. Alpha. -NPD), 4' -tris [ phenyl (m-tolyl) amino ] triphenylamine (m-MTDATA), 4', 4' -tris (N-carbazolyl) -triphenylamine (TCTA), 1-bis [ (di-4-tolylamino) phenylcyclohexane (TAPC), 4' -tris (diphenylamino) triphenylamine (TDATA) doped with tetrafluoro-tetracyano-quinone dimethane (F4-TCNQ), p-doped phthalocyanines (e.g., F4-TCNQ-doped zinc phthalocyanine (ZnPc)), F4-TCNQ doped N, N ' -diphenyl-N, one or more of N ' -di (1-naphthyl) -1,1' -biphenyl-4, 4' -diamine (alpha-NPD), hexaazabenzophenanthrene-capronitrile (HAT-CN), nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.
The material of the electron transport layer 60 may be selected from, but not limited to, at least one of metal oxide, doped metal oxide, group 2-6 semiconductor material, group 3-5 semiconductor material, and group 1-3-6 semiconductor material. In particular, the metal oxide may be selected from, but not limited to, znO, tiO 2 、SnO 2 、Al 2 O 3 At least one of (a) and (b); the metal oxide in the doped metal oxide can be selected from, but not limited to, znO, tiO 2 、SnO 2 The doping element may be selected from, but is not limited to, at least one of Al, mg, li, in, ga; the 2-6 semiconductor family material may be selected from at least one of, but is not limited to ZnS, znSe, cdS; the 3-5 semiconductor family material may be selected from, but is not limited to, at least one of InP, gaP; the group 1-3-6 semiconductor material may be selected from, but is not limited to, at least one of CuInS, cuGaS. As an example, the electron transport material may be ZnO, znMgO, znAlO, znLiO, znAlLiO and TiO 2 At least one of them, etc.
It is understood that the materials of the layers of the led 100 may be adjusted according to the light emitting requirements of the led 100.
It is understood that the light emitting diode 100 may be a front-mounted light emitting diode or an inverted light emitting diode.
Further, the present application also provides a method for manufacturing the light emitting diode 100.
In some embodiments of the present application, when the light emitting diode 100 is a front-mounted light emitting diode, the method for preparing the light emitting diode 100 includes the following steps:
step S10a, providing an anode 10;
step S20a, providing a composition, and disposing the composition on a surface of the anode 10 to obtain a light-emitting layer 20;
in step S30a, a cathode 30 is formed on a side of the light-emitting layer 20 facing away from the anode 10.
In other embodiments of the present application, when the light emitting diode 100 is an inverted light emitting diode, the method for manufacturing the light emitting diode 100 includes the following steps:
the preparation method comprises the following steps:
step S10b, providing a cathode 30;
step S20b, providing a composition, and disposing the composition on a surface of the cathode 30 to obtain a light-emitting layer 20;
step S30b of forming an anode 10 on a side of the light-emitting layer 20 facing away from the cathode 30;
in step S20a and step S20b, the composition includes a composite material and a solvent, the composite material includes quantum dots 1 and Mxene materials 2, the Mxene materials 2 are in a sheet shape, and the quantum dots 1 are embedded in gaps between adjacent Mxene materials 2.
Further, in some embodiments, the light emitting diode 100 further includes a hole transport layer 50, a hole injection layer 40, and an electron transport layer 60. In one embodiment, the light emitting diode 100 is a front-mounted light emitting diode, and the method for manufacturing the light emitting diode 100 includes the following steps:
step S100, providing an anode 10;
step S200, providing a hole injection material, and disposing the hole injection material on the anode 10 to obtain a hole injection layer 40;
step S300, providing a hole transport material, and disposing the hole transport material on the hole injection layer 40 to obtain a hole transport layer 50;
step S400, providing a composition, and disposing the composition on the hole transport layer 50 to obtain a light emitting layer 20;
step S500, forming a cathode 30 on the light emitting layer 20.
In the above method for manufacturing the light emitting diode 100, the method for manufacturing the anode 10, the hole transport layer 50, the light emitting layer 20, the electron transport layer 60, the cathode 30 and the hole injection layer 40 may be implemented by conventional techniques in the art, such as chemical methods or physical methods. Wherein, the chemical method comprises chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition and coprecipitation. Physical methods include physical plating methods and solution methods, wherein the physical plating methods include: thermal evaporation plating, electron beam evaporation plating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; the solution method may be spin coating, printing, ink jet printing, knife coating, printing, dip-coating, dipping, spray coating, roll coating, casting, slit coating, bar coating, or the like.
In a fifth aspect, embodiments of the present application further provide a display device, where the display device includes the light emitting diode 100.
The technical solutions and technical effects of the present application are described in detail below by means of specific examples and comparative examples, and the following examples are only some examples of the present application, and are not intended to limit the present application in any way.
Example 1
The preparation method of the composition comprises the following steps:
1) Preparation of quantum dots:
adding 6mmol of zinc acetate, 7mL of oleic acid and 15mL of 1-octadecene into a 50-mL three-neck flask to obtain a first mixed solution, heating the first mixed solution to 170 ℃ under the argon bubbling condition, keeping the temperature for 1h, and heating the first mixed solution to 300 ℃;
dissolving 0.8mmol of selenium powder in 0.4mL of tri-n-octyl phosphine to prepare a selenium solution for later use; dissolving 0.1mmol of cadmium oxide in 0.6mL of oleic acid, and reacting at 250 ℃ for 0.5h to prepare a first cadmium solution for later use; mixing the selenium solution and the first cadmium solution, then injecting the mixture into the first mixed solution at 300 ℃ for reaction for 10min to obtain a second mixed solution;
dissolving 0.8mmol of selenium powder in 0.4mL of tri-n-octyl phosphine, then injecting the solution into the second mixed solution, and reacting for 30min at 300 ℃ to obtain a third mixed solution;
dissolving 0.8mmol of sulfur powder in 0.4mL of tri-n-octyl phosphine to prepare a first sulfur solution for later use; dissolving 0.4mmol of cadmium oxide in 2mL of oleic acid to prepare a second cadmium solution for later use; injecting the first sulfur solution and the second cadmium solution into the third mixed solution, and reacting for 30min at 300 ℃ to obtain a fourth mixed solution;
dissolving 0.8mmol of sulfur powder in 0.4mL of tri-n-octyl phosphine, then injecting the solution into a fourth mixed solution, reacting for 30min at 300 ℃, cooling the solution to room temperature, and cleaning and precipitating for multiple times by using hexane and ethanol as solvents and anti-solvents respectively to obtain the quantum dots CdZnSe/ZnSe/CdZnS/ZnS.
2) Dispersing quantum dots in octane, adding Mxene material 2, and performing ultrasonic treatment for 10min with ultrasonic power of 2W/cm 2 Obtaining a composition, wherein the Mxene material 2 is Ti 3 C 2 T x And in the composition, the concentration of the two-dimensional material is 1.5mg/mL, and the concentration of the quantum dots 1 is 20mg/mL.
The preparation method of the QLED device comprises the following steps:
(1) A glass substrate with an ITO anode was provided, wherein the thickness of the anode 10 was 50nm.
(2) In the air, a layer of PEDOT: PSS was spin-coated on the surface of the anode 10 to form a hole injection layer 40 having a thickness of 25 nm.
(3) The TFB material was spin-coated on the surface of the hole injection layer 40 in a nitrogen atmosphere to form a hole transport layer 50 having a thickness of 30 nm.
(4) After the semi-finished product obtained in the step (3) is cooled, the composition obtained by the method is spin-coated on the surface of the hole transport layer 50 in a nitrogen atmosphere to obtain the light-emitting layer 20 with the thickness of 25 nm.
(5) ZnO was spin-coated on the surface of the light-emitting layer 20 in a nitrogen atmosphere to obtain an electron transport layer 60 having a thickness of 30 nm.
(6) And (3) placing the semi-finished product prepared in the step (5) into a vacuum cavity, evaporating a layer of silver with the thickness of 100nm on the surface of the electron transport layer 60 to serve as a cathode 30, and packaging to obtain the QLED device.
Example 2
The embodiment is basically the same as embodiment 1, except that in this embodiment:
in the composite material, the concentration of the Mxene material is 0.5mg/mL.
Example 3
The embodiment is basically the same as embodiment 1, except that in this embodiment:
in the composite material, the concentration of the Mxene material is 5mg/mL.
Example 4
The embodiment is basically the same as embodiment 1, except that in this embodiment:
in the composite material, the concentration of the Mxene material is 0.4mg/mL.
Example 5
The embodiment is basically the same as embodiment 1, except that in this embodiment:
in the composite material, the concentration of the Mxene material is 5.5mg/mL.
Example 6
The embodiment is basically the same as embodiment 1, except that in this embodiment:
the Mxene material is Nb 2 CT x 。
Example 7
The embodiment is basically the same as embodiment 1, except that in this embodiment:
the Mxene material is V 2 CT x 。
Example 8
The embodiment is basically the same as embodiment 1, except that in this embodiment:
the Mxene material is Ti 3 C 2 T x And Nb (Nb) 2 CT x And the weight ratio of the two is 1:1.
Comparative example 1
This comparative example scheme is substantially identical to example 1, except that in this comparative example:
the two-dimensional material is removed from the composition.
Comparative example 2
The preparation steps of the quantum dots and the device in this comparative example are substantially the same as those of example 1, except that in this comparative example, the preparation method of the composition comprises the following step (2):
taking the chemical formula of Ti 3 C 2 T x The Mxene material of (2) is dispersed in dimethylformamide to prepare a single-layer Mxene nano-sheet solution with the concentration of 5mg/mL for standby; and dispersing graphene oxide nano sheets (GO) in dimethylformamide to prepare GO solution for later use.
Mixing a single-layer Mxene nano-sheet solution with a GO solution, wherein the mass ratio of Mxene to GO in the mixed solution is 1:20, after 5min of ultrasonic treatment, stirring for 5h, so that the single-layer Mxene nano-sheets are completely embedded between two adjacent single-layer GO nano-sheets.
Vacuum filtering the mixed solution, and drying the precipitate at 100deg.C for 10 hr to obtain dry product. And adding the dry product into a hydriodic acid solution, and reacting for 6 hours to perform reduction treatment to obtain the Mxene functionalized rGO.
Dispersing Mxene functionalized rGO in a DMF solution containing 1-aminopyrene-disuccinate diester (AD), continuously stirring, carrying out crosslinking reaction for 1h, collecting precipitate, washing with DMF and ethanol for 6 times respectively to obtain MrGO-AD composite nano-sheets, and dispersing the MrGO-AD composite nano-sheets in octane to prepare the MrGO-AD composite nano-sheet solution, wherein the concentration of the MrGO-AD composite nano-sheets is 1mg/mL.
Dispersing quantum dot CdZnSe/CdS in octane, and then uniformly mixing with MrGO-AD composite nano-sheet solution to obtain a composite material, wherein in the composite material, the concentration of the MrGO-AD composite nano-sheet is 1mg/mL, and the concentration of the quantum dot CdZnSe/CdS is 20mg/mL.
Comparative example 3
This comparative example scheme is substantially identical to example 1, except that in this comparative example:
the Mxene material is MoS 2 。
Comparative example 4
This comparative example scheme is substantially identical to example 1, except that in this comparative example:
the Mxene material is graphene oxide.
The performance of the quantum dot light emitting diodes of examples 1-8 and comparative examples 1-4 were tested and the test results are presented in the table one. The test method is as follows:
(1) The detection method of the external quantum efficiency EQE comprises the following steps: the ratio of electron-hole pairs injected into the quantum dots to the number of outgoing photons is shown in the unit, and is an important parameter for measuring the advantages and disadvantages of the electroluminescent device, and the quantum dots can be obtained by measuring the electron-hole pairs with an EQE optical test instrument. The specific calculation formula is as follows:
where ηe is the light outcoupling efficiency, ηγ is the ratio of the number of carriers recombined to the number of carriers injected, x is the ratio of the number of excitons generating photons to the total number of excitons, KR is the radiation process rate, KNR is the non-radiation process rate.
Test conditions: the process is carried out at room temperature, and the air humidity is 30-60%.
(2) The test method of the service life T95@1000nit comprises the following steps:
the time required for the device to decrease in brightness to a certain proportion of the maximum brightness under constant current or voltage drive is defined as T95, and the lifetime is the measured lifetime. To shorten the test period, the device lifetime test is usually performed by accelerating the aging of the device at high brightness, and fitting the device lifetime at high brightness by an extended exponential decay brightness decay fitting formula, for example: the lifetime meter at 1000nit is T95@1000nit. The specific calculation formula is as follows:
wherein T95 L T95 is the life at low brightness H For the actual life under high brightness, L H To accelerate the device to the highest brightness, L L For 1000nit, A is an acceleration factor, and the experiment shows that the A value is 1.7 by measuring the service lives of a plurality of groups of green QLED devices under rated brightness.
(3) The current density-voltage curve of a single carrier transport thin film device (HOD/EOD) was tested. The voltage of the device at a constant current of 2mA was taken for comparison. Wherein:
the method of fabrication of the single sub-device (EOD) is substantially the same as the method of fabrication of its corresponding complete QLED device, except that the hole injection layer and hole transport layer are subtracted.
The method of fabrication of a single hole device (HOD) is substantially the same as the method of fabrication of its corresponding complete QLED device, except that the electron transport layer is subtracted.
In the above test, the devices used for the external quantum efficiency test and the device lifetime test were QLED devices of the complete structures in the above examples and comparative examples; the device used in test item (3) was a single carrier device corresponding to the QLED device in the above examples and comparative examples.
Table one:
from Table one can see:
each example shows higher external quantum efficiency and longer service life, which indicates that the light-emitting diode prepared by the scheme of the application has excellent luminous efficiency and service life;
compared with comparative example 1, the EOD device and the HOD device of each example, especially example 1, have smaller voltage difference at constant current of 2mA, which indicates that the carrier balance of the light emitting diode manufactured by the scheme of the application is better; further, the external quantum efficiency and lifetime of each example device were higher than those of comparative example 1. In conclusion, after the two-dimensional material with negative electricity on the surface is added, the charge balance of the light-emitting diode is improved, so that the device has higher luminous efficiency and longer service life;
compared with comparative example 2, the EOD device and the HOD device of example 1 have smaller voltage difference at a constant current of 2mA, and have higher external quantum efficiency and service life, which means that the addition of graphene oxide nanoplatelets and 1-aminopyrene-disuccinate diester has poor effect of improving the charge balance of the light emitting diode, and is difficult to improve the luminous efficiency and service life of the device;
compared with comparative examples 3 and 4, the EOD devices and HOD devices of examples 1 and 6-8 have smaller voltage difference at a constant current of 2mA, and have higher external quantum efficiency and life, which indicates that the addition of Mxene material has better performance enhancement effect on light emitting diodes than other two-dimensional materials.
The above description is made in detail of the composite materials, the compositions, the preparation methods thereof, the light emitting diode and the display device provided in the embodiments of the present application, and specific examples are applied herein to illustrate the principles and the embodiments of the present application, and the above description of the examples is only used to help understand the methods and the core ideas of the present application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.

Claims (14)

1. The composite material is characterized by comprising quantum dots and Mxene materials, wherein the quantum dots are embedded in gaps between adjacent Mxene materials.
2. The composite of claim 1, wherein the composite consists of the quantum dots and the Mxene material.
3. The composite material of claim 1 or 2, wherein adjacent Mxene materials are layered and spaced apart from each other to form a interstitial space in which at least a portion of the quantum dots are embedded.
4. The composite material according to claim 1 or 2, wherein the Mxene material has the chemical formula M n+ 1 X n T x M is at least one of transition metals, X is C or N, N is 1-3, T x Comprising O 2- 、OH - 、F - At least one of (a) and (b); or,
the Mxene material comprises Ti 2 CT x 、TiNbCT x 、Ti 3 CN x T x 、Ta 4 C 3 T x 、Nb 2 CT x 、V 2 CT x 、Nb 4 C 3 T x 、Mo 2 CT x 、Ti 4 N 3 T x At least one of (1), wherein T x Comprising O 2- 、OH - 、F - At least one of them.
5. The composite material according to claim 1 or 2, wherein the weight ratio of the Mxene material to the quantum dots in the composite material is (0.5-5): (10-60).
6. The composite material according to claim 1 or 2, wherein the quantum dot is at least one selected from the group consisting of single-structure quantum dots and core-shell structure quantum dots, the single-structure quantum dots being at least one selected from the group consisting of group II-VI compounds, group IV-VI compounds, group III-V compounds, group I-III-VI compounds, and perovskite-type semiconductor materials, the group II-VI compounds being selected from CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZAt least one of nSeTe and HgZnSTe, wherein the IV-VI compound is at least one selected from SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe, snPbSTe, the III-V compound is at least one selected from GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs and InAlPSb, and the I-III-VI compound is at least one selected from CuInS 2 、CuInSe 2 AgInS 2 The perovskite semiconductor material comprises at least one of a doped or undoped inorganic perovskite semiconductor and a doped or undoped organic-inorganic hybrid perovskite semiconductor, and the structural general formula of the inorganic perovskite semiconductor is AMX 3 The organic-inorganic hybrid perovskite semiconductor has a structural general formula of BMX 3 Wherein A is Cs + M is a divalent metal cation, X is a halogen anion, B is an organic amine cation comprising CH 3 (CH 2 ) n-2 NH 3 + (n.gtoreq.2) or NH 3 (CH 2 ) n NH 3 2+ (n is more than or equal to 2); the core of the quantum dot with the core-shell structure is selected from any one of the quantum dots with the single structure, and the shell material of the quantum dot with the core-shell structure is selected from at least one of CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS and ZnS.
7. A composition comprising a solvent and the composite of any one of claims 1 to 6.
8. The composition of claim 7, wherein the solvent comprises at least one of octane, toluene, carbon tetrachloride, n-hexane, cyclohexane, heptane, and liquid paraffin; and/or the number of the groups of groups,
in the composition, the concentration of the Mxene material is 0.5-5 mg/mL; and/or the number of the groups of groups,
in the composition, the concentration of the quantum dots is 10-60 mg/mL.
9. A method of preparing a composition comprising the steps of:
providing quantum dots, mxene material and a solvent;
and dispersing the quantum dots and the Mxene material in the solvent to obtain a composition.
10. The method of preparing the composition of claim 9, wherein the step of dispersing the quantum dots, mxene material in the solvent is performed under ultrasonic conditions;
the power of the ultrasonic wave is 1-3W/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the And/or the ultrasonic treatment time is 5-30 min.
11. The method of preparing the composition according to claim 9, wherein the step of dispersing the quantum dots, the Mxene material in the solvent is performed under stirring conditions;
the stirring speed is 200-1000 rpm; and/or stirring for 5-8 h.
12. A light-emitting diode comprising a stacked anode, a light-emitting layer and a cathode, characterized in that the material of the light-emitting layer comprises the composite material according to any one of claims 1 to 6, or the light-emitting layer is made of a composition comprising the composition according to claim 7 or 8, or the composition is made by the production method according to any one of claims 9 to 11.
13. The led of claim 12, wherein the anode and the cathode are each independently selected from a metal electrode, a carbon-silicon material electrode, a metal oxide electrode, or a composite electrode, the metal electrode being of a material selected from the group consisting ofAg. Al, mg, au, cu, mo, pt, ca and Ba, the material of the carbon-silicon material electrode is at least one selected from silicon, graphite, carbon nano tube, graphene and carbon fiber, the material of the metal oxide electrode is at least one selected from indium doped tin oxide, fluorine doped tin oxide, antimony doped tin oxide, aluminum doped zinc oxide, gallium doped zinc oxide, indium doped zinc oxide, magnesium doped zinc oxide and aluminum doped magnesium oxide, and the composite electrode is at least one selected from AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO and TiO 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 ZnS/Ag/ZnS or ZnS/Al/ZnS.
14. A display device comprising a light emitting diode according to claim 12 or 13.
CN202211152919.3A 2022-09-21 2022-09-21 Composite material, composition, preparation method of composite material, light-emitting diode and display device Pending CN117801804A (en)

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CN114267801B (en) * 2020-09-16 2023-09-01 Tcl科技集团股份有限公司 Quantum dot light emitting diode and preparation method thereof
CN115247058A (en) * 2021-04-28 2022-10-28 Tcl科技集团股份有限公司 Composite material and preparation method thereof, and quantum dot light-emitting diode and preparation method thereof
CN113690066B (en) * 2021-08-10 2022-11-25 太原理工大学 Graphene quantum dot/few-layer Ti 3 C 2 T x Preparation method and application of composite material
CN115188943A (en) * 2022-07-07 2022-10-14 桂林理工大学 Tin dioxide quantum dot-titanium carbide based composite material, preparation thereof and application thereof in lithium-sulfur battery

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