CN117693222A - Light emitting device, manufacturing method thereof and display device - Google Patents
Light emitting device, manufacturing method thereof and display device Download PDFInfo
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- CN117693222A CN117693222A CN202211725371.7A CN202211725371A CN117693222A CN 117693222 A CN117693222 A CN 117693222A CN 202211725371 A CN202211725371 A CN 202211725371A CN 117693222 A CN117693222 A CN 117693222A
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- Electroluminescent Light Sources (AREA)
Abstract
The application relates to the technical field of display, in particular to a light-emitting device, a preparation method thereof and a display device. The problem that the charge generation layer in the related art has unbalanced electron and hole distribution transmitted to two adjacent light-emitting units and cannot balance the electricity of the two adjacent light-emitting units, so that the improvement of the overall performance of the light-emitting device is not facilitated is solved. A light emitting device, comprising: the substrate, first electrode, second electrode, first light emitting unit, second light emitting unit and charge generation layer, the charge generation layer sets up between first light emitting unit and second light emitting unit, and the charge generation layer includes: a p-type semiconductor layer, an n-type semiconductor layer, and a dielectric layer stacked; wherein the dielectric layer and the n-type semiconductor layer are located on opposite sides of the p-type semiconductor layer, or the dielectric layer and the p-type semiconductor layer are located on opposite sides of the n-type semiconductor layer. The method is used for preparing the light-emitting device.
Description
Technical Field
The application relates to the technical field of display, in particular to a light-emitting device, a preparation method thereof and a display device.
Background
Currently, OLED and QLED have their own advantages and are becoming more and more a research hotspot for display technology. The stacked light emitting device is a light emitting device formed by connecting a plurality of light emitting units in series, and compared with a non-stacked light emitting device, the stacked light emitting device can improve the efficiency, service life and stability of the light emitting device and has wide application prospect. In the current stacked light emitting device, a connection layer is formed between two adjacent light emitting units, the connection layer includes a charge generating layer, and the current charge generating layer includes an n-type charge generating material and a p-type charge generating material for injecting and transporting carriers (such as holes and electrons) between interfaces of the two adjacent light emitting units.
However, in the conventional light emitting device, there is a problem that the carrier transport is unbalanced, for example, in the case of a QLED light emitting device, the electron transport speed is greater than the hole transport speed, so even if a charge generating layer is disposed between two adjacent light emitting units, there is a problem that the distribution of electrons and holes transported to the two adjacent light emitting units is unbalanced, and the electrical balance of the two adjacent light emitting units cannot be considered, thereby reducing the overall performance of the light emitting device.
Disclosure of Invention
Based on this, the light emitting device of the present application is advantageous in terms of performance improvement.
In a first aspect, there is provided a light emitting device comprising:
a first electrode;
the second electrode and the first electrode are arranged in a lamination way;
the first light-emitting unit and the second light-emitting unit are arranged between the first electrode and the second electrode;
the charge generation layer is arranged between the first light emitting unit and the second light emitting unit, and comprises: a p-type semiconductor layer, an n-type semiconductor layer, and a dielectric layer stacked;
wherein the p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the first electrode to the second electrode, or,
the n-type semiconductor layer, the p-type semiconductor layer, and the dielectric layer are sequentially stacked in a direction from the first electrode to the second electrode, or,
the p-type semiconductor layer, the n-type semiconductor layer, and the dielectric layer are sequentially stacked in a direction from the second electrode to the first electrode, or,
the n-type semiconductor layer, the p-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the second electrode to the first electrode.
Optionally, the first light emitting unit comprises a first quantum dot light emitting material and the second light emitting unit comprises a second quantum dot light emitting material;
the p-type semiconductor layer, the n-type semiconductor layer, and the dielectric layer are sequentially stacked in a direction from the first electrode to the second electrode, or,
The p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the second electrode to the first electrode.
Optionally, the material of the p-type semiconductor layer includes: an inorganic semiconductor material; and/or the number of the groups of groups,
the thickness of the p-type semiconductor layer is 5-15 nm; and/or the number of the groups of groups,
the material of the n-type semiconductor layer includes: a first metal material; and/or the number of the groups of groups,
the thickness of the n-type semiconductor layer is 2-10 nm; and/or the number of the groups of groups,
the material of the dielectric layer includes: one or more of metal oxides, metal nitrides, non-metal oxides, non-metal nitrides, and organic polymeric materials; and/or the number of the groups of groups,
the thickness of the dielectric layer is 2-5 nm.
Optionally, the inorganic semiconductor material comprises: phosphomolybdic acid, nickel oxide, WO 3 ，MoO 3 And V 2 O 5 One or more of the following; and/or the number of the groups of groups,
the first metal material includes: al, ag, au, yb and Mg; and/or the material of the dielectric layer comprises: one or more of alumina, siN, silica, and PMMA.
Optionally, the p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the first electrode to the second electrode;
the material of the n-type semiconductor layer comprises Al, the material of the dielectric layer comprises aluminum oxide, the total thickness of the n-type semiconductor layer and the dielectric layer is 4-15 nm, and/or,
The thickness of the charge generation layer is 9 to 30nm.
Optionally, the material of the first electrode and/or the second electrode comprises one or more of a metal, a carbon material, and a metal oxide; and/or the number of the groups of groups,
the first light emitting unit and/or the second light emitting unit further comprises an electron transport layer and/or an electron injection layer; the material of the electron transport layer and/or the electron injection layer includes an inorganic material and/or an organic material; and/or the number of the groups of groups,
the light-emitting layer of the first light-emitting unit and/or the second light-emitting unit is a quantum dot light-emitting layer or an organic light-emitting layer; and/or the number of the groups of groups,
the first light emitting unit and/or the second light emitting unit further comprises a hole transport layer and/or a hole injection layer; the material of the hole transport layer and/or the hole injection layer comprises at least one of TFB, cuPc, PVK, poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT: PSS, TAPC, MCC, F4-TCNQ, HATCN, 4' -tris (N-3-methylphenyl-N-phenylamino) triphenylamine, polyaniline, transition metal oxide, transition metal sulfide, transition metal stannate, doped graphene, undoped graphene and C60.
Optionally, the metal of the first electrode and/or the second electrode comprises one or more of Al, ag, cu, mo, au, ba, ca, yb and Mg; and/or the number of the groups of groups,
The carbon material of the first electrode and/or the second electrode comprises one or more of graphite, carbon nanotubes, graphene and carbon fibers; and/or the number of the groups of groups,
the metal oxide of the first electrode and/or the second electrode comprises a doped or undoped metal oxide comprising one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or a composite comprising a doped or undoped transparent metal oxide with a metal sandwiched therebetweenAn electrode, wherein the composite electrode comprises AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, znS/Ag/ZnS, znS/Al/ZnS, and TiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following; and/or the number of the groups of groups,
the inorganic material of the electron transport layer and/or the electron injection layer is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, titanium lithium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannate, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, and the doped element comprises one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium; and/or the electron transport layer and/or the electron injection layer is/are made of one or more selected from quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds; and/or the number of the groups of groups,
The material of the quantum dot luminescent layer comprises at least one of single-structure quantum dots and core-shell structure quantum dots, wherein the material of the single-structure quantum dots is selected from at least one of II-VI compound, IV-VI compound, III-V compound and I-III-VI compound, the II-VI compound is selected from at least one of CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe and HgZnSTe, the IV-VI compound is selected from at least one of SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe and SnPbSTe, and the III-V compound is selected from GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNAt least one of Sb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs or InAlPSb, the I-III-VI compound is selected from CuInS 2 、CuInSe 2 AgInS 2 At least one of (a) and (b); and/or the number of the groups of groups,
the core of the quantum dot with the core-shell structure comprises any one of the quantum dots with the single structure, and the shell material of the quantum dot with the core-shell structure comprises CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS, znS and at least one of the quantum dots with the single structure; and/or the number of the groups of groups,
the material of the organic light emitting layer includes at least one of 4,4' -bis (N-carbazole) -1,1' -biphenyl tris [2- (p-tolyl) pyridine-C2, N) iridium (III), 4' -tris (carbazole-9-yl) triphenylamine tris [2- (p-tolyl) pyridine-C2, N) iridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and derivatives thereof, polyparaphenylene and derivatives thereof, polythiophene and derivatives thereof, polyfluorene and derivatives thereof.
In a second aspect, there is provided a method of manufacturing a light emitting device, comprising:
providing a first electrode;
a second electrode is laminated on the first electrode;
disposing a first light emitting unit and a second light emitting unit between the first electrode and the second electrode;
providing a charge generation layer between the first light emitting unit and the second light emitting unit; the charge generation layer includes: a p-type semiconductor layer, an n-type semiconductor layer, and a dielectric layer stacked;
Wherein the p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the first electrode to the second electrode, or,
the n-type semiconductor layer, the p-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the first electrode to the second electrode; or alternatively, the first and second heat exchangers may be,
the p-type semiconductor layer, the n-type semiconductor layer, and the dielectric layer are sequentially stacked in a direction from the second electrode to the first electrode, or,
the n-type semiconductor layer, the p-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the second electrode to the first electrode.
Optionally, the light emitting device is an inverted light emitting device, the material of the n-type semiconductor layer includes Al, and the material of the dielectric layer includes alumina;
providing a charge generation layer comprising:
disposing a p-type semiconductor layer on the first light emitting cell;
disposing a metal Al layer on the p-type semiconductor layer;
exposing the metal Al layer to an oxygen-containing gas for a preset time to enable oxygen to react with the metal Al layer, and generating an aluminum oxide layer on the surface of the metal Al layer to prepare the dielectric layer.
In a third aspect, there is provided a display device including:
a light emitting device according to the first aspect or a light emitting device prepared by a method according to the second aspect.
Compared with the prior art, the application has the following advantages:
The performance of the light emitting device is improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present application;
fig. 2 is a schematic cross-sectional structure of another light emitting device according to an embodiment of the present application;
fig. 3 is a schematic cross-sectional structure of still another light emitting device according to an embodiment of the present application.
Reference numerals:
a light emitting device-10; a substrate-1; a first electrode 2; a second electrode-3; a first light emitting unit-4; a second light emitting unit-5; a light emitting layer-41 of the first light emitting unit; a light emitting layer-51 of the second light emitting unit; an electron transport layer-42 of the first light emitting unit; a hole transport layer-43 of the first light emitting unit; an electron transport layer-52 of the second light emitting unit; a hole transport layer-53 of the second light emitting unit; a hole injection layer-54 of the second light emitting unit; a charge generation layer-6; a p-type semiconductor layer-61; an n-type semiconductor layer-62; a dielectric layer-63; a light emitting unit-100.
Detailed Description
The present application is described in further detail below in connection with specific embodiments. This application may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Based on the above technical problems, some embodiments of the present application provide a light emitting device 10, as shown in fig. 1 and 2, including: a substrate 1, a first electrode 2, a second electrode 3, a first light emitting unit 4 and a second light emitting unit 5 disposed on the substrate 1. Wherein the first electrode 2 and the second electrode 3 are stacked, and the first electrode 2 is closer to the substrate 1 than the second electrode 3, and the first light emitting unit 4 and the second light emitting unit 5 are disposed between the first electrode 2 and the second electrode 3.
In some embodiments, as shown in fig. 1, the first electrode 2 may be an anode, and the second electrode 3 is a cathode, and the light emitting device 10 is a front-mounted light emitting device. In other embodiments, as shown in fig. 2, the first electrode 2 is a cathode, and the second electrode 3 is an anode, and the light emitting device 10 is an inverted light emitting device.
In some embodiments, the first and second light emitting units 4 and 5 may include at least one of an electron transport layer, an electron injection layer, a hole transport layer, a hole injection layer, a hole blocking layer, and an electron blocking layer in addition to the light emitting layer 41 and the light emitting layer 51.
As an example, as shown in fig. 1 and 2, a case is shown in which the first light emitting unit 4 further includes an electron transport layer 42 and a hole transport layer 43, and the second light emitting unit 5 further includes an electron transport layer 52, a hole transport layer 53, and a hole injection layer 54.
In the case where the light-emitting device 10 is a front-mounted light-emitting device, as shown in fig. 1, the electron transport layer 42, the light-emitting layer 41, and the hole transport layer 43 included in the first light-emitting unit 4, and the electron transport layer 52, the light-emitting layer 51, and the hole transport layer 53 included in the second light-emitting unit 5 are all sequentially arranged in a direction gradually approaching the first electrode 2. In the case where the light emitting device 10 is an inverted light emitting device, the electron transport layer 42, the light emitting layer 41, and the hole transport layer 43 included in the first light emitting unit 4, and the electron transport layer 52, the light emitting layer 51, and the hole transport layer 53 included in the second light emitting unit 5 are all sequentially arranged in a direction gradually away from the first electrode 2.
In some embodiments, as shown in fig. 1 and 2, the light emitting device 10 further includes: a charge generation layer 6, the charge generation layer 6 being disposed between the first light emitting unit 4 and the second light emitting unit 5, and the charge generation layer 6 comprising: a p-type semiconductor layer 61, an n-type semiconductor layer 62, and a dielectric layer 63 are stacked. The p-type semiconductor layer 61, the n-type semiconductor layer 62, and the dielectric layer 63 are sequentially stacked along the direction from the first electrode 2 to the second electrode 3, or the n-type semiconductor layer 62, the p-type semiconductor layer 61, and the dielectric layer 63 are sequentially stacked along the direction from the first electrode 2 to the second electrode 3, or the p-type semiconductor layer 61, the n-type semiconductor layer 62, and the dielectric layer 63 are sequentially stacked along the direction from the second electrode 3 to the first electrode 2, or the n-type semiconductor layer 62, the p-type semiconductor layer 61, and the dielectric layer 63 are sequentially stacked along the direction from the second electrode 3 to the first electrode 2.
The material of the p-type semiconductor layer 61 may be a p-type semiconductor, which is also called a hole-type semiconductor, and the hole concentration is greater than the electron concentration. May be created by doping atoms with electron acceptors in an intrinsic semiconductor, such as by substituting atoms such as doped group IIIA elements of Al, B, ga for Si or Ge.
In p-type semiconductors, holes are multi-electrons and electrons are minority electrons, and holes correspond to positively charged particles, and play a major role in the conduction of such semiconductors.
The material of the n-type semiconductor layer can be an n-type semiconductor, and doping and defects can cause the increase of the electron concentration in the conduction band. For Si, ge-based semiconductor materials, doping with group V elements such as phosphorus, arsenic, antimony, etc., when impurity atoms replace Si, ge atoms in the crystal lattice in an alternative manner, one excess electron other than covalent bonding is provided, which results in an increase in the concentration of conduction band electrons in the semiconductor, such impurity atoms being referred to as donors.
In an n-type semiconductor, electrons are multi-electrons and holes are minority electrons, and such a semiconductor exhibits electron conductivity.
The material of dielectric layer 63 may be a dielectric material, also known as a dielectric, which is a material characterized by an electrode. The dielectric material transfers, stores and records the effects and influences of the electric field by means of induction rather than conduction.
The dielectric material is a non-conductive body, i.e., an insulator, and has a relatively high resistivity and a relatively high dielectric constant.
When the dielectric layer 63 is not provided, the p-type semiconductor layer 61 and the n-type semiconductor layer 62 are stacked in this order in the direction from the second electrode 3 to the first electrode 2, for example, when the above-described light-emitting device 10 is a forward-type light-emitting device, at this time, when a voltage is applied to the light-emitting device 10, electrons in the n-type semiconductor layer 62 are injected into the light-emitting layer 41 of the first light-emitting unit 4 through the electron transport layer 42, holes in the p-type semiconductor layer 61 are injected into the light-emitting layer 51 of the second light-emitting unit 5 through the hole injection layer 54 and the hole transport layer 53, and thus, if the electron transport speed of the light-emitting device 10 itself is higher than the hole transport speed, the electron transport speed of the second light-emitting unit 5 and the hole transport speed of the second light-emitting unit 5 are made to be balanced, and the light-emitting efficiency, the lifetime and stability of the second light-emitting unit 5 can be improved, but by increasing the electron transport speed of the first light-emitting unit 4 and the electron transport speed of the hole transport speed of the first light-emitting unit 4 are made to be not balanced, and the overall light-emitting performance of the first light-emitting unit 4 is not easily improved, and the overall light-emitting device 10 is deteriorated. If the hole transport speed of the light emitting device 10 is greater than the electron transport speed, the electron transport speed of the first light emitting unit 4 may be increased to balance the transport of electrons and holes in the first light emitting unit 4, so as to improve the light emitting efficiency, lifetime and stability of the first light emitting unit 4, but by increasing the hole transport speed of the second light emitting unit 5, the transport of electrons and holes in the second light emitting unit 5 is unbalanced, resulting in the deterioration of the efficiency of the second light emitting unit 5, which is also disadvantageous for the improvement of the overall performance of the light emitting device 10.
When the light emitting device 10 is an inverted light emitting device, the same problems as those of the above-mentioned inverted light emitting device are present, and detailed analysis is described above, and thus, the description thereof will not be repeated.
In summary, by providing the p-type semiconductor layer 4 and the n-type semiconductor layer 5 between two adjacent light emitting cells, positive and negative charge carriers are generated between the interfaces between the p-type semiconductor layer 4 and the n-type semiconductor layer 5 when a voltage is applied across the light emitting device 10, positive charge carriers, i.e., holes, are injected into the light emitting cells in contact therewith through the p-type semiconductor layer 4, and negative charge carriers, i.e., electrons, are injected into the light emitting cells in contact therewith through the n-type semiconductor layer 5, thereby realizing the injection and transmission of carriers to the two light emitting cells, respectively, between the interfaces of the two adjacent light emitting cells. In the case where the carrier transport of two adjacent light emitting units satisfies the same condition, such as the electron transport speed is greater than the hole transport speed, or the hole transport speed is greater than the electron transport speed, when the transport of one of the electrons and holes is adjusted so that it tends to be balanced, the electron and hole transport of the other tends to be further deteriorated, which is disadvantageous for the improvement of the overall performance of the light emitting device 10.
Based on the above, in the light emitting device provided in the present application, by disposing the dielectric layer 63 between two adjacent light emitting units, since the dielectric layer 63 can play a role of blocking carriers, in the case that the hole transport speed of the light emitting device is greater than the electron transport speed, as shown in fig. 1, the n-type semiconductor layer 62, the p-type semiconductor layer and the dielectric layer 63 can be sequentially stacked along the direction from the anode to the cathode, so that the dielectric layer 63 can be used for blocking hole injection, and excessive hole injection into the light emitting unit adjacent to the dielectric layer 63 is avoided, thereby effectively improving the electric balance of two adjacent light emitting units and further improving the overall performance of the light emitting device.
In the case where the electron transport speed of the light emitting device is greater than the hole transport speed, as shown in fig. 2, the p-type semiconductor layer 61, the n-type semiconductor layer 62, and the dielectric layer 63 may be sequentially stacked in the direction from the anode to the cathode, so that the dielectric layer 63 may be used to block electron injection, thereby preventing excessive electrons from being injected into the light emitting units adjacent to the dielectric layer 63, and also effectively improving the electrical balance between the two adjacent light emitting units, and further improving the overall performance of the light emitting device 10.
The type of the light emitting device 10 is not particularly limited. The light emitting device 10 may be an OLED light emitting device, a QLED light emitting device, or an LED light emitting device.
In some embodiments, in the case where the light emitting device is an OLED light emitting device, since the hole transport speed of the OLED light emitting device is greater than the electron transport speed, as shown in fig. 1, the n-type semiconductor layer 62, the p-type semiconductor layer and the dielectric layer 63 may be sequentially stacked in the direction from anode to cathode, so that injection of holes into the light emitting units adjacent to the dielectric layer 63 may be reduced, and thus, electrical balance of two adjacent light emitting units may be improved, and thus, overall performance of the OLED light emitting device may be effectively improved.
In other embodiments, in the case where the light emitting device 10 is a QLED light emitting device, such as a first light emitting unit including a first quantum dot light emitting material and a second light emitting unit including a second quantum dot light emitting material, since the electron transport rate of the QLED light emitting device is greater than the hole transport rate, the p-type semiconductor layer 61, the n-type semiconductor layer 62, and the dielectric layer 63 may be sequentially stacked in a direction from the first electrode to the second electrode as shown in fig. 2, where the first electrode is a cathode and the second electrode is an anode. In this way, the injection of electrons into the light emitting units adjacent to the dielectric layer 63 can be reduced, and thus the electric balance of the two adjacent light emitting units can be improved, and thus the overall performance of the QLED light emitting device can be effectively improved.
Of course, in other embodiments, the p-type semiconductor layer 61, the n-type semiconductor layer 62, and the dielectric layer 63 may be sequentially stacked in the direction from the second electrode to the first electrode. In this case, the second electrode may be a cathode, and the first electrode may be an anode.
Here, the materials of the p-type semiconductor layer 61, the n-type semiconductor layer 62, and the dielectric layer 63 are not particularly limited, and in practical applications, a suitable p-type semiconductor material, n-type semiconductor material, and dielectric material may be selected as needed to prepare a light emitting device of the corresponding materials.
By way of example, in the case where the light emitting device 10 is an OLED light emitting device, the material of the p-type semiconductor layer 61 may be an organic semiconductor material doped with a p-type dopant, and the material of the n-type semiconductor layer 62 may be an organic semiconductor material doped with an n-type dopant.
In the following embodiments, the materials of the p-type semiconductor layer 61, the n-type semiconductor layer 62, and the dielectric layer 63 will be described by taking the light-emitting device 10 as a QLED light-emitting device as an example.
In some embodiments, as shown in fig. 3, the light emitting device 10 may include at least two light emitting units 100, and the first light emitting unit 4 and the second light emitting unit 5 are any adjacent two light emitting units of the at least two light emitting units 100.
In some embodiments, the material of p-type semiconductor layer 61 comprises an inorganic semiconductor material; and/or the number of the groups of groups,
the thickness of the p-type semiconductor layer is 5-15 nm; and/or the number of the groups of groups,
the material of the n-type semiconductor layer includes: a first metal material; and/or the number of the groups of groups,
the thickness of the n-type semiconductor layer is 2-10 nm; and/or the number of the groups of groups,
the material of the dielectric layer includes: one or more of metal oxides, metal nitrides, non-metal oxides, non-metal nitrides, and organic polymeric materials; and/or the number of the groups of groups,
the thickness of the dielectric layer is 2-5 nm.
The inorganic semiconductor material may be any inorganic p-type semiconductor material.
The inorganic semiconductor material can ensure good thermal stability, so that the phenomenon that the light emitting device 10 is unstable during the manufacturing process can be avoided.
The material of the n-type semiconductor layer comprises: in the case of the first metal material, a schottky contact is formed between the p-type semiconductor layer and the n-type semiconductor layer, where the schottky contact refers to bending of the energy band of the semiconductor at the interface when the metal and the semiconductor material are in contact, forming a schottky barrier, where the existence of the barrier results in an interface resistance, and in correspondence with the ohmic contact, where the barrier is very small or no contact barrier. In this case, when the light emitting device is energized, the p-type semiconductor layer injects holes into the light emitting cells adjacent thereto, and the n-type semiconductor layer injects electrons into the light emitting cells adjacent to the dielectric layer, and a small amount of leakage current is generated by thermally excited electrons in the metal, so that when the p-type semiconductor layer, the n-type semiconductor layer, and the dielectric layer are stacked in this order from the first electrode to the second electrode or from the second electrode to the first electrode, the occurrence of leakage current can be reduced due to the blocking of the dielectric layer.
In addition, by limiting the thicknesses of the p-type semiconductor layer 61, the n-type semiconductor layer 62, and the dielectric layer 63 to the above-described ranges, the overall thickness of the charge generation layer 6 can be reduced to the greatest extent, and thus high light transmittance of the light emitting device 10 can be ensured. By limiting the thickness of the n-type semiconductor layer 62 to the above range, the thickness of the metal can be ensured to be thin, so that high light transmittance can be ensured, and the problem of light transmittance reduction caused by excessive thickness of the metal layer can be avoided, and by limiting the thickness of the dielectric layer 63 to the above range, on the one hand, the thinner thickness of the dielectric layer 63 is due to light transmittance; on the other hand, too thick dielectric layer 63 may reduce transmittance, and may seriously block electron injection, which is not beneficial to electron transport; on the other hand, the thickness of the metal layer is thinner, so that the metal layer is not smooth enough and not compact enough, leakage current can be caused, a dielectric layer 63 is added on or under the metal layer, and the dielectric layer 63 has better compactness, so that the effect of inhibiting the leakage current can be achieved.
In some embodiments, the inorganic semiconductor material comprises: phosphomolybdic acid (Phosphomolybdic acid, PMA), nickel oxide, WO 3 ，MoO 3 And V 2 O 5 One or more of the following; and/or, the first metallic material comprises: al, ag, au, yb and Mg; and/or the material of the dielectric layer comprises: one or more of alumina, siN, silica, and PMMA.
Phosphomolybdic acid, also known as dodecamolybdic acid, PMA for short, is a yellow-green inorganic compound, a heteropolyacid, and phosphomolybdic acid is soluble in water and polar organic solvents (e.g., ethanol). Phosphomolybdic acid is a highly efficient oxidant and has a very fast multi-electron reversible redox character under milder conditions, and can be used to provide positive ions such as holes. Nickel oxide is a p-type semiconductor material with a forbidden band width of 3.7eV. WO (WO) 3 Holes can be transported and injected as p-type semiconductor materials. MoO (MoO) 3 Is a good hole injection material. V (V) 2 O 5 Is a good hole injection material. The inorganic semiconductor materials have high work functions, high thermal stability and high transmittance, and can effectively promote the injection of holes.
Al, ag, au, yb and Mg both have a small work function and can be used to transport and inject electrons. These first metal materials may be simple substances or alloys.
Alumina is a high hardness compound, is resistant to high temperatures and corrosion, and is a good dielectric material when it is violently bought to a store at normal temperature. SiN has high heat stability and oxidation resistance, can form an oxide protective film in air, and has good chemical stability and high electrical insulation property. The silicon oxide is silicon oxide and has good insulating property. PMMA (polymethyl methacrylate ) is a high molecular polymer, also called acrylic or organic glass, and has the advantages of high transparency, low price, easiness in machining and the like. These dielectric materials can effectively reduce the prevention of electron or hole injection and can control the leakage current generated by the light emitting device 10, thereby further improving the overall performance of the light emitting device 10.
In some embodiments, the p-type semiconductor layer 61, the n-type semiconductor layer 62, and the dielectric layer 63 are sequentially stacked in the direction from the first electrode 2 to the second electrode 3; the material of the n-type semiconductor layer 62 includes Al, the material of the dielectric layer 63 includes aluminum oxide, the total thickness of the n-type semiconductor layer and the dielectric layer is 4 to 15nm, and/or the thickness of the charge generation layer is 9 to 30nm.
In these embodiments, the light emitting device is an inverted light emitting device in which, since the material of the n-type semiconductor layer 62 includes Al and the material of the dielectric layer 63 includes alumina, the alumina can be formed by surface oxidation of an Al metal layer, which can provide advantages of thinner thickness and easier fabrication of the n-type semiconductor layer 62 and the dielectric layer 63. In addition, in the case where the light emitting device 10 is an inverted light emitting device, since the dielectric layer 63 is provided above the metal layer, the metal layer and the p-type semiconductor layer 61 below it can also be protected, for example, a thin film below the dielectric layer 63 can be protected from an upper solvent when other functional layers are prepared on the dielectric layer 63.
In some embodiments, the substrate 1 may be a rigid substrate (e.g., glass) or a flexible substrate (e.g., PI film).
In some embodiments, the material of the first electrode and/or the second electrode includes one or more of a metal, a carbon material, and a metal oxide; and/or the number of the groups of groups,
the first light emitting unit and/or the second light emitting unit further comprises an electron transport layer and/or an electron injection layer; the material of the electron transport layer and/or the electron injection layer comprises an inorganic material and/or an organic material; and/or the number of the groups of groups,
the light-emitting layer of the first light-emitting unit and/or the second light-emitting unit is a quantum dot light-emitting layer or an organic light-emitting layer; and/or the number of the groups of groups,
the first light emitting unit and/or the second light emitting unit further comprises a hole transport layer and/or a hole injection layer; the hole transport layer and/or the hole injection layer comprises at least one of TFB, cuPc, PVK, poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT: PSS, TAPC, MCC, F4-TCNQ, HATCN, 4' -tris (N-3-methylphenyl-N-phenylamino) triphenylamine, polyaniline, transition metal oxide, transition metal sulfide, transition metal stannide, doped graphene, undoped graphene, and C60.
In some embodiments, the metal of the first electrode and/or the second electrode comprises one or more of Al, ag, cu, mo, au, ba, ca, yb and Mg; and/or the number of the groups of groups,
The carbon material of the first electrode and/or the second electrode comprises one or more of graphite, carbon nanotubes, graphene and carbon fibers; and/or the number of the groups of groups,
the metal oxide of the first electrode and/or the second electrode comprises doped or undoped metal oxide comprising one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or comprises a composite electrode comprising doped or undoped transparent metal oxide and metal sandwiched therebetween, wherein the composite electrode comprises AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, znS/Ag/ZnS, znS/Al/ZnS, tiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following; and/or the number of the groups of groups,
the inorganic material of the electron transport layer and/or the electron injection layer is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, titanium lithium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannate, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, and the doped element comprises one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium; and/or the electron transport layer and/or the electron injection layer is/are made of one or more selected from quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds; and/or the number of the groups of groups,
The material of the quantum dot luminescent layer comprises at least one of single-structure quantum dots and core-shell structure quantum dots, wherein the material of the single-structure quantum dots is selected from II-VI group compounds and IV-VI group compoundsAt least one of group III-V compound and group I-III-VI compound, wherein the group II-VI compound is selected from at least one of CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe and HgZnSTe, the group IV-VI compound is selected from at least one of SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe and SnPbSTe, the group III-V compound is selected from at least one of GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs or InAlPSb, and the group I-III-VI compound is selected from CuInS 2 、CuInSe 2 AgInS 2 At least one of (a) and (b); and/or the number of the groups of groups,
the core of the quantum dot with the core-shell structure comprises any one of the quantum dots with the single structure, and the shell material of the quantum dot with the core-shell structure comprises CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS, znS and at least one of the quantum dots with the single structure; and/or the number of the groups of groups,
the material of the organic light emitting layer includes at least one of 4,4' -bis (N-carbazole) -1,1' -biphenyl tris [2- (p-tolyl) pyridine-C2, N) iridium (III), 4' -tris (carbazole-9-yl) triphenylamine tris [2- (p-tolyl) pyridine-C2, N) iridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and derivatives thereof, polyparaphenylene and derivatives thereof, polythiophene and derivatives thereof, polyfluorene and derivatives thereof.
Some embodiments of the present application provide a display apparatus including a light emitting device as described above, or a light emitting device prepared by the method as described above.
Examples of the display device may be a device having a display or light emitting function such as a television, a billboard, or a display wall.
The technical effects of the display device provided in the embodiment of the present application are substantially the same as those of the light emitting device provided in the embodiment of the present application, and are not described herein.
Some embodiments of the present application provide a method for manufacturing a light emitting device, including:
s1, setting a first electrode.
Wherein the first electrode may be disposed on a substrate, and an example of the substrate may be a glass or PI (Polyimide) film.
The first electrode may be an anode or a cathode. The first electrode may be disposed on the substrate by one or more of deposition, spin coating, and ink jet printing.
Among them, deposition may include chemical vapor deposition, physical vapor deposition, sputter deposition, metal film deposition, thermal evaporation deposition, and the like.
Here, taking the first electrode as an example, the material of the first electrode may include: a low work function metal such as Ag, and/or a low work function metal oxide material such as ITO (Indium Tin Oxides, indium tin oxide), IZO (Indium Zinc Oxide ).
S2, laminating a second electrode on the first electrode;
s3, arranging a first light-emitting unit and a second light-emitting unit between the first electrode and the second electrode;
s4, arranging a charge generation layer between the first light emitting unit and the second light emitting unit; the charge generation layer includes a stacked p-type semiconductor layer, n-type semiconductor layer, and dielectric layer;
Wherein the p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the first electrode to the second electrode, or,
the n-type semiconductor layer, the p-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the first electrode to the second electrode; or alternatively, the first and second heat exchangers may be,
the p-type semiconductor layer, the n-type semiconductor layer, and the dielectric layer are sequentially stacked in a direction from the second electrode to the first electrode, or,
the n-type semiconductor layer, the p-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the second electrode to the first electrode.
Wherein, setting the first light emitting unit may include:
an electron transport layer is formed on the first electrode, a light emitting layer is formed on the electron transport layer, and a hole transport layer and/or a hole injection layer is formed on the light emitting layer.
Here, taking a light emitting device as an example of a quantum dot light emitting device, the electron transport layer may be formed by one or more of deposition, spin coating, and inkjet printing, the light emitting layer may be formed by one or more of spin coating and inkjet printing, and the hole transport layer and/or the hole injection layer may be formed by one or more of deposition, spin coating, and inkjet printing.
After the first light emitting unit is prepared, providing the charge generating layer may include:
Disposing a p-type semiconductor layer on the first light emitting cell; an n-type semiconductor layer is disposed on the p-type semiconductor layer, and a dielectric layer is disposed on the n-type semiconductor layer.
Wherein, taking the material of the p-type semiconductor layer including the inorganic semiconductor material and the material of the n-type semiconductor layer including the first metal material as an example, the p-type semiconductor layer may be formed by one or more of deposition, spin coating and inkjet printing, the n-type semiconductor layer may be formed by deposition, and the dielectric layer may be formed by one or more of deposition, spin coating and inkjet printing to provide the dielectric layer.
In some embodiments, the light emitting device is an inverted light emitting device, the material of the n-type semiconductor layer comprises Al, and the material of the dielectric layer comprises aluminum oxide. An n-type semiconductor layer and a dielectric layer are sequentially disposed on the p-type semiconductor layer, comprising:
disposing a metal Al layer on the p-type semiconductor layer; exposing the metal Al layer to an oxygen-containing gas for a preset time to enable oxygen to react with the metal Al layer, and generating an oxide layer on the surface of the metal Al layer to prepare the dielectric layer.
In the embodiments, by disposing the metal Al layer and then reacting the metal Al layer with the oxygen-containing gas, a dense aluminum oxide layer can be formed on the surface of the metal Al layer, so that an n-type semiconductor layer and a dielectric layer can be prepared, the preparation process is simple, a thinner n-type semiconductor layer and a thinner dielectric layer can be obtained, and the underlying metal Al layer and the underlying p-type semiconductor layer can be protected through the aluminum oxide layer.
Taking the example that the second light emitting unit includes the electron transport layer 52, the light emitting layer 51, the hole transport layer 53, and the hole injection layer 54, the second light emitting unit may be provided with:
an electron transport layer 52 is formed on the dielectric layer, a light emitting layer 51 is formed on the electron transport layer 52, and a hole transport layer 53 and a hole injection layer 54 are sequentially formed on the light emitting layer 51.
The preparation method of each layer in the second light emitting unit may be the same as the preparation method of each layer corresponding to the second light emitting unit, and will not be described herein.
In S3, taking the second electrode as an anode, and taking a material of the anode including a metal material with a high work function such as Al, ag, etc. as an example, forming the second electrode on the substrate on which the second light emitting unit is formed may include:
the second electrode is formed on the substrate on which the second light emitting unit is formed using deposition.
In the following examples and comparative examples, all the raw materials were purchased commercially and, in order to maintain the reliability of the experiment, the raw materials used in the following examples and comparative examples all had the same physical and chemical parameters or were subjected to the same treatment.
Example 1
The preparation method of the light emitting device provided in embodiment 1 is as follows:
step 1), forming an ITO cathode on a glass substrate.
Step 2), forming a first light emitting unit on the cathode:
the method specifically comprises the following steps: and preparing an electron transport layer on the ITO cathode, wherein the electron transport layer is made of ZnO, forming a ZnO ink layer on the cathode by adopting a spin coating mode, and annealing at 120 ℃ for 15min after removing the solvent by vacuum drying to obtain the electron transport layer with the thickness of 60 nm. Preparing a QD luminescent layer on the electron transport layer, wherein the QD luminescent layer is made of red quantum dots of CdSe/ZnS (wherein CdSe is a shell and ZnS is a core), adopting OA as an organic ligand, spin-coating red quantum dot ink on the electron transport layer, drying, and annealing at 100 ℃ for 5min to obtain the luminescent layer with the thickness of 25 nm. And preparing a protective layer PEIE (polyethoxyethyleneimine) on the light-emitting layer, wherein the PEIE film layer has the thickness of 5nm, plays a role in protecting the QD light-emitting layer from being corroded and damaged by a solvent when preparing a subsequent hole-transporting layer, and simultaneously forms an interface dipole at the PEIE/QD interface so as to improve the valence band energy level of the QD, reduce the hole injection barrier from the hole-transporting layer to the QD light-emitting layer and promote the transmission of holes. Preparing a hole transport layer on the PEIE protective layer, specifically spin-coating TFB ink on the PEIE protective layer, vacuum drying, and annealing at 170 ℃ for 20min to obtain the hole transport layer with the thickness of 40 nm.
Step 3) preparing a charge generation layer on the first light emitting unit:
the method specifically comprises the following steps: and preparing an inorganic semiconductor layer on the first light-emitting unit, specifically spin-coating PMA (phosphomolybdic acid) ink on the first light-emitting unit, drying, and annealing at 150 ℃ for 15min to obtain the inorganic semiconductor layer with the thickness of 8 nm. Preparing a metal layer on the inorganic semiconductor layer, specifically, evaporating metal Al on the inorganic semiconductor layer by vacuum evaporation to obtain a metal Al layer with the thickness of 3nm, then exposing the metal Al layer to oxygen to form an alumina dielectric layer on the surface of the metal Al layer, and finally obtaining the total thickness of Al and alumina of 5nm.
Step 4) preparing a second light emitting unit on the charge generating layer:
the method specifically comprises the following steps: and preparing an electron transport layer on the charge generation layer, namely spin-coating ZnO ink on the surface of a dielectric layer of the charge generation layer, vacuum drying to form a film, and annealing at 120 ℃ for 15min to obtain the electron transport layer with the thickness of 60 nm. Preparing a QD luminescent layer on the electron transport layer, wherein the QD luminescent layer is made of red quantum dots of CdSe/ZnS (wherein CdSe is a shell and ZnS is a core), adopting OA as an organic ligand, spin-coating red quantum dot ink on the electron transport layer, drying, and annealing at 100 ℃ for 5min to obtain the luminescent layer with the thickness of 25 nm. The hole transport layer was prepared on the QD light emitting layer, specifically, CBP was formed on the QD light emitting layer by vacuum evaporation to obtain a hole transport layer having a thickness of 45 nm. And preparing a hole injection layer on the hole transport layer, specifically, forming the HATCN on the hole transport layer by vacuum evaporation to obtain the hole injection layer with the thickness of 5nm.
And 5) preparing an anode on the second light-emitting unit, specifically, forming metal Al on the hole injection layer by vacuum evaporation to obtain the anode with the thickness of 100 nm.
And 6) packaging to prepare the light-emitting device.
Example 2
The light emitting device provided in example 2 was prepared in substantially the same manner as in example 1, except that the inorganic semiconductor material PMA in the charge generating layer was replaced with the organic substance PEDOT: PSS.
Comparative example 1
The light emitting device provided in comparative example 1 was prepared substantially the same as in example 1, except that no dielectric layer was provided.
The external quantum efficiency, current efficiency, lifetime (T95@1000nit) results of the above examples and comparative examples are shown in Table 1 below.
TABLE 1
As can be seen from table 1, the external quantum efficiency, the current efficiency and the lifetime of each of example 1 and example 2 were greatly improved over comparative example 1, and in particular, in example 1, in the case where the material of the p-type semiconductor layer in the charge generation layer was an inorganic semiconductor, the external quantum efficiency, the current efficiency and the lifetime of the light emitting device could be improved to the maximum extent, indicating that the charge generation layer using the inorganic semiconductor had more stable hole transport performance.
In summary, by disposing the dielectric layer in the charge generation layer, the dielectric layer can play a role of blocking carriers, so that the hole transmission speed and the electron transmission speed of the light emitting device can be adjusted, and the electric balance of two adjacent light emitting units can be effectively improved, thereby effectively improving the overall performance of the light emitting device. Aiming at the quantum dot light emitting device, the Schottky structure is arranged, and the dielectric layer is arranged on one side of the metal far away from the p-type semiconductor layer, so that electrons in the quantum dot light emitting device can be blocked, the problem of electric balance caused by overhigh electron transmission speed is avoided, and leakage current can be reduced; and under the condition that the quantum dot light-emitting device is an inverted light-emitting device, the dielectric layer can be formed by oxidation of metal, so that the preparation is convenient, the thicknesses of the metal layer and the dielectric layer can be effectively reduced, and the light transmittance is improved. In addition, by adopting inorganic semiconductor materials, the device stability is higher, and the device efficiency and service life are better.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. A light emitting device, comprising:
a first electrode;
a second electrode arranged in a stacked manner with the first electrode;
a first light emitting unit and a second light emitting unit disposed between the first electrode and the second electrode;
a charge generation layer disposed between the first light emitting unit and the second light emitting unit, and the charge generation layer includes: a p-type semiconductor layer, an n-type semiconductor layer, and a dielectric layer stacked;
wherein the p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the first electrode to the second electrode, or,
the n-type semiconductor layer, the p-type semiconductor layer, and the dielectric layer are sequentially stacked in a direction from the first electrode to the second electrode, or,
The p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the second electrode to the first electrode, or,
the n-type semiconductor layer, the p-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the second electrode to the first electrode.
2. A light-emitting device according to claim 1, wherein,
the first light emitting unit comprises a first quantum dot light emitting material, and the second light emitting unit comprises a second quantum dot light emitting material;
the p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the first electrode to the second electrode, or,
the p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the second electrode to the first electrode.
3. A light-emitting device according to claim 1, wherein,
the p-type semiconductor layer comprises the following materials: an inorganic semiconductor material; and/or the number of the groups of groups,
the thickness of the p-type semiconductor layer is 5-15 nm; and/or the number of the groups of groups,
the material of the n-type semiconductor layer comprises: a first metal material; and/or the number of the groups of groups,
the thickness of the n-type semiconductor layer is 2-10 nm; and/or the number of the groups of groups,
the material of the dielectric layer comprises: one or more of metal oxides, metal nitrides, non-metal oxides, non-metal nitrides, and organic polymeric materials; and/or the number of the groups of groups,
The thickness of the dielectric layer is 2-5 nm.
4. A light emitting device as recited in claim 3, wherein,
the inorganic semiconductor material includes: phosphomolybdic acid, nickel oxide, WO 3 ，MoO 3 And V 2 O 5 One or more of the following; and/or the number of the groups of groups,
the first metal material includes: al, ag, au, yb and Mg; and/or, the material of the dielectric layer comprises: one or more of alumina, siN, silica, and PMMA.
5. A light-emitting device according to any one of claims 1 to 4, wherein,
the p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the first electrode to the second electrode;
the material of the n-type semiconductor layer comprises Al, the material of the dielectric layer comprises aluminum oxide, the total thickness of the n-type semiconductor layer and the dielectric layer is 4-15 nm, and/or
The thickness of the charge generation layer is 9-30 nm.
6. A light-emitting device according to claim 1, wherein,
the material of the first electrode and/or the second electrode comprises one or more of metal, carbon material and metal oxide; and/or the number of the groups of groups,
the first light emitting unit and/or the second light emitting unit further comprises an electron transport layer and/or an electron injection layer; the material of the electron transport layer and/or the electron injection layer comprises an inorganic material and/or an organic material; and/or the number of the groups of groups,
The light-emitting layer of the first light-emitting unit and/or the second light-emitting unit is a quantum dot light-emitting layer or an organic light-emitting layer; and/or the number of the groups of groups,
the first light emitting unit and/or the second light emitting unit further comprises a hole transport layer and/or a hole injection layer; the material of the hole transport layer and/or the hole injection layer comprises at least one of TFB, cuPc, PVK, poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT: PSS, TAPC, MCC, F4-TCNQ, HATCN, 4' -tris (N-3-methylphenyl-N-phenylamino) triphenylamine, polyaniline, transition metal oxide, transition metal sulfide, transition metal stannide, doped graphene, undoped graphene and C60.
7. A light-emitting device according to claim 6, wherein,
the metal of the first electrode and/or the second electrode comprises one or more of Al, ag, cu, mo, au, ba, ca, yb and Mg; and/or the number of the groups of groups,
the carbon material of the first electrode and/or the second electrode comprises one or more of graphite, carbon nanotubes, graphene and carbon fibers; and/or the number of the groups of groups,
the metal oxide of the first electrode and/or the second electrode comprises doped or undoped metal oxide, comprises one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or comprises a composite electrode with metal sandwiched between doped or undoped transparent metal oxide, the composite electrode comprises AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, znS/Ag/ZnS, znS/Al/ZnS, tiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following; and/or the number of the groups of groups,
the inorganic material of the electron transport layer and/or the electron injection layer is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, titanium lithium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannate, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, and the doped element comprises one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium; and/or the electron transport layer and/or the electron injection layer are/is made of one or more selected from quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds; and/or the number of the groups of groups,
the material of the quantum dot luminescent layer comprises at least one of single-structure quantum dots and core-shell structure quantum dots, wherein the single-structure quantum dots are selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds, the II-VI group compounds are selected from at least one of CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe and HgZnSte, the IV-VI group compounds are selected from at least one of SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe and SnPbSTe, the III-V group compounds are selected from at least one of GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs or InAlPSb, and the I-III-VI group compounds are selected from CuInS 2 、CuInSe 2 AgInS 2 At least one of (a) and (b); and/or the number of the groups of groups,
the core of the quantum dot with the core-shell structure comprises any one of the quantum dots with the single structure, and the shell material of the quantum dot with the core-shell structure comprises CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS, znS and at least one of the quantum dots with the single structure; and/or the number of the groups of groups,
the material of the organic light emitting layer comprises at least one of 4,4' -bis (N-carbazole) -1,1' -biphenyl, tris [2- (p-tolyl) pyridine-C2, N) iridium (III), 4' -tris (carbazole-9-yl) triphenylamine, tris [2- (p-tolyl) pyridine-C2, N) iridium, diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and derivatives thereof, poly-p-benzene and derivatives thereof, polythiophene and derivatives thereof, polyfluorene and derivatives thereof.
8. A method of manufacturing a light emitting device, comprising:
providing a first electrode;
a second electrode is laminated on the first electrode;
providing a first light emitting unit and a second light emitting unit between the first electrode and the second electrode;
Providing a charge generation layer between the first light emitting unit and the second light emitting unit; the charge generation layer includes: a p-type semiconductor layer, an n-type semiconductor layer, and a dielectric layer stacked;
wherein the p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the first electrode to the second electrode, or,
the n-type semiconductor layer, the p-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the first electrode to the second electrode; or alternatively, the first and second heat exchangers may be,
the p-type semiconductor layer, the n-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the second electrode to the first electrode, or,
the n-type semiconductor layer, the p-type semiconductor layer and the dielectric layer are sequentially stacked along the direction from the second electrode to the first electrode.
9. The method of claim 8, wherein the light emitting device is an inverted light emitting device, the material of the n-type semiconductor layer comprises Al, and the material of the dielectric layer comprises aluminum oxide;
providing the charge generation layer, comprising:
disposing the p-type semiconductor layer on the first light emitting cell;
disposing a metallic Al layer on the p-type semiconductor layer;
And exposing the metal Al layer to oxygen-containing gas for a preset time to enable oxygen to react with the metal Al layer, and generating an aluminum oxide layer on the surface of the metal Al layer to prepare the dielectric layer.
10. A display device, comprising:
a light emitting device according to any one of claims 1 to 7, or a light emitting device prepared by a method according to any one of claims 8 to 9.
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