CN117750799A - Ink, serial electroluminescent device and preparation method thereof - Google Patents

Ink, serial electroluminescent device and preparation method thereof Download PDF

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CN117750799A
CN117750799A CN202211292750.1A CN202211292750A CN117750799A CN 117750799 A CN117750799 A CN 117750799A CN 202211292750 A CN202211292750 A CN 202211292750A CN 117750799 A CN117750799 A CN 117750799A
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oxide
layer
ink
light emitting
electrode
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张凯旋
陈颖
付东
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Guangdong Juhua Printing Display Technology Co Ltd
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Guangdong Juhua Printing Display Technology Co Ltd
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Abstract

The present disclosure provides an ink comprising a fluorocarbon sulfonic acid, a solvent, and at least one of an N-type metal oxide precursor and an N-type metal oxide. The disclosure also provides a method for manufacturing a tandem electroluminescent device, comprising the steps of: preparing a light emitting unit on the first electrode, wherein the light emitting unit comprises a light emitting layer and at least one of a hole functional layer, an electron blocking layer, a hole blocking layer and an electron functional layer; covering the light emitting unit with the ink, and drying the ink to prepare a charge generating layer; preparing another light emitting unit on the charge generating layer; and forming a second electrode on the other light emitting unit. The present disclosure also provides a tandem electroluminescent device prepared by the preparation method. The light emitting performance and the service life of the series electroluminescent device can be improved.

Description

Ink, serial electroluminescent device and preparation method thereof
Technical Field
The disclosure relates to the technical field of light emitting device manufacturing, in particular to ink, a serial electroluminescent device and a preparation method thereof.
Background
Light emitting devices such as Organic Light Emitting Diodes (OLEDs) and quantum dot light emitting diodes (QLEDs) have been widely used in display devices in recent years because of their advantages such as high color gamut, solution-fabricability, and flexibility. However, since the light emitting device has a short lifetime, disposing the light emitting device as a stacked structure becomes one of the main ways to improve the lifetime of the light emitting device. Among them, a Charge Generation Layer (CGL) is an important point of development of a light emitting device.
The deep level N-type metal oxide (N-MO) has a large electron affinity, and can accept electrons when contacting with the light-emitting unit, so that the interface between the N-MO and the light-emitting unit has a strong charge generation capability. However, n-MO prepared based on the solution method often has difficulty reaching a deep Lowest Unoccupied Molecular Orbital (LUMO) energy level, making its charge separation capability less than ideal, thereby affecting the light emitting performance and the service life of the light emitting device.
Disclosure of Invention
Based on this, it is necessary to provide an ink capable of improving the light emission performance and the service life of the light emitting device.
In addition, there is a need to provide a method for manufacturing a tandem electroluminescent device.
In addition, it is also necessary to provide a tandem electroluminescent device.
At least one embodiment of the present disclosure provides an ink including a fluorocarbon sulfonic acid, a solvent, and at least one of an N-type metal oxide precursor and an N-type metal oxide.
In at least one embodiment of the present disclosure, the N-type metal oxide comprises MoO 3 、WO 3 、V 2 O 5 ReO (Reo) 3 At least one of them.
In at least one embodiment of the present disclosure, the fluorocarbon sulfonic acid comprises at least one of a fluorine substituted hydrocarbon sulfonic acid, a hydrocarbon sulfonic acid with an oxygen atom embedded in the fluorine substituted hydrocarbon chain, a fluorine substituted aryl sulfonic acid, and a perfluorinated sulfonic acid polymer;
preferably, the alkyl is C4-C20 alkyl, and the aryl is C6-C20 aryl;
by fluorine substitution is meant that at least one of the hydrogen atoms in the corresponding compound is replaced by a fluorine atom.
In at least one embodiment of the present disclosure, the fluorocarbon sulfonic acid includes at least one of perfluorooctyl sulfonic acid, perfluoro (2-ethoxyethane) sulfonic acid, pentafluorobenzene sulfonic acid, nafion, and aquivin.
In at least one embodiment of the present disclosure, in the ink, the mass ratio of the N-type metal oxide precursor and/or the N-type metal oxide to the fluorocarbon sulfonic acid is 20:1 to 1:2.
In at least one embodiment of the present disclosure, the solvent includes at least one of methanol, ethanol, isopropanol, n-butanol, n-pentanol, n-hexanol, acetonitrile, cyclohexanone, and water.
At least one embodiment of the present disclosure provides a method for manufacturing a tandem electroluminescent device, including the steps of:
preparing a light emitting unit on the first electrode, wherein the light emitting unit comprises a light emitting layer and at least one of a hole functional layer, an electron blocking layer, a hole blocking layer and an electron functional layer;
covering the light emitting unit with the ink, and drying the ink to prepare a charge generating layer;
preparing another light emitting unit on the charge generating layer; and
and preparing a second electrode on the other light emitting unit.
In at least one embodiment of the present disclosure, the covering the ink on the light emitting unit specifically includes the steps of:
spin-coating the ink on the light emitting unit;
or, spin-coating the ink according to any one of claims 1 to 6 after the light-emitting unit is covered with a polymer material for preventing the ink according to any one of claims 1 to 6 from corroding the light-emitting unit;
Preferably, the polymer material is selected from at least one of PEIE, PEI, PFN-Br, PFN and polyetheramine.
In at least one embodiment of the present disclosure, the first electrode is an anode and the second electrode is a cathode;
when the series electroluminescent device is an inverted series electroluminescent device, the directions of the first electrode and the second electrode are opposite.
In at least one embodiment of the present disclosure, the hole-functional layer includes a hole-transporting layer and/or a hole-injecting layer, and the material of the hole-transporting layer and/or the hole-injecting layer includes at least one of TFB, cuPc, PVK, poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT: PSS, TAPC, MCC, F4-TCNQ, HATCN, 4' -tris (N-3-methylphenyl-N-phenylamino) triphenylamine, polyaniline, transition metal oxide, transition metal sulfide, transition metal stannide, doped graphene, undoped graphene, and C60; and/or
The material of the electron blocking layer comprises at least one of spirofluorene materials, arylamine materials, aluminum nitride, aluminum gallium nitride and silicon nitride; and/or
The material of the hole blocking layer comprises at least one of zinc oxide and rhenium oxide doped in the zinc oxide, wherein the rhenium oxide is at least one of rhenium dioxide, rhenium heptaoxide, rhenium trioxide and rhenium dioxide; and/or
The electronic functional layer comprises an electronic transmission layer and/or an electronic injection layer, and the materials of the electronic transmission layer and/or the electronic injection layer comprise inorganic materials and/or organic materials; the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, titanium lithium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannate, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide and barium titanate, and the doped element comprises one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium; and/or
The light-emitting layer is quantumA dot light emitting layer or an organic light emitting layer; the material of the quantum dot luminescent layer comprises at least one of single-structure quantum dots and core-shell structure quantum dots, wherein the single-structure quantum dots are selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds, the II-VI group compounds are selected from at least one of CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe and HgZnSte, the IV-VI group compounds are selected from at least one of SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe and SnPbSTe, the III-V group compounds are selected from at least one of GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs or InAlPSb, and the I-III-VI group compounds are selected from CuInS 2 、CuInSe 2 AgInS 2 At least one of (a) and (b); the core of the quantum dot with the core-shell structure comprises any one of the quantum dots with the single structure, and the shell material of the quantum dot with the core-shell structure comprises CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS, znS and at least one of the quantum dots with the single structure; the material of the organic light-emitting layer comprises 4,4' -bis (N-carbazole) -1,1' -biphenyl, tris [2- (p-tolyl) pyridine-C2, N) iridium (III), 4' -tris (carbazole-9-yl) triphenylamine, tris [2- (p-tolyl) pyridine-C2, N) iridium, F8BT, diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, polyacetylene and derivatives thereof, polyparaphenylene and derivatives thereof, polythiophene and derivatives thereof, polyfluorene derivatives thereofAnd at least one of its derivatives; and/or
The material of the first electrode and/or the second electrode comprises one or more of a metal, a carbon material, and a metal oxide, the metal comprising one or more of Al, ag, cu, mo, au, ba, ca, yb and Mg; the carbon material comprises one or more of graphite, carbon nanotubes, graphene and carbon fibers; the metal oxide comprises one or more of doped or undoped metal oxide, ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or a composite electrode comprising doped or undoped transparent metal oxide and metal sandwiched therebetween, and the composite electrode comprises AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, znS/Ag/ZnS, znS/Al/ZnS, tiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following.
At least one embodiment of the present disclosure provides a tandem electroluminescent device, which includes a first electrode, a second electrode, a plurality of light emitting units, and a plurality of charge generating layers, where each light emitting unit is located between the first electrode and the second electrode, and a charge generating layer is disposed between two adjacent light emitting units;
wherein the charge generation layer is prepared from the ink.
The present disclosure physically mixes a deep level N-type metal oxide (N-MO) precursor or a deep level N-type metal oxide with a fluorocarbon sulfonic acid (FCSA) to form the ink, which has enhanced N-type characteristics and stronger conductivity and can reduce an energy barrier for charge generation when the ink is used to prepare a charge generation layer, and thus, the tandem electroluminescent device. At the same time, since the fluorocarbon sulfonic acid has a larger dipole moment, the work function of n-MO (i.e., the electron potential energy affecting the MO surface) is increased, which makes electrons from the HOMO level of the light emitting unit more easily transferred to the LUMO level of MO in the charge generating layer, and enhances the charge generating capability of the interface between the charge generating layer and the light emitting unit, thereby improving the light emitting performance and the service life of the tandem electroluminescent device.
Drawings
Fig. 1 is a schematic structural diagram of a tandem electroluminescent device provided in the present disclosure.
Reference numerals: 100-series electroluminescent devices; 10-a first electrode; a 20-light emitting unit; 30-a charge generation layer; 40-a second electrode.
Detailed Description
In order that the disclosure may be understood, a more complete description of the disclosure will be rendered by reference to the appended drawings. Preferred embodiments of the present disclosure are shown in the drawings. This disclosure may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used in the description of the disclosure herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
At least one embodiment of the present disclosure provides an ink including a solvent, and at least one of an N-type metal oxide precursor and an N-type metal oxide (N-MO), and a fluorocarbon sulfonic acid (FCSA).
The N-type metal oxide precursor is a deep-level N-type metal oxide precursor. In one embodiment, the N-type metal oxide precursor may be molybdenum powder, tungsten powder, or the like. When the ink includes the N-type metal oxide precursor, the N-type metal oxide precursor may form the N-type metal oxide during subsequent processing.
In one embodiment, the N-type metal oxide comprises MoO 3 、WO 3 、V 2 O 5 ReO (Reo) 3 At least one of them.
In one implementationIn an example, the fluorocarbon sulfonic acid includes at least one of a fluorine substituted hydrocarbon-based sulfonic acid, a hydrocarbon-based sulfonic acid having an oxygen atom inserted in the chain of the fluorine substituted hydrocarbon-based group, a fluorine substituted aryl sulfonic acid, and a perfluorosulfonic acid polymer. Preferably, the fluorocarbon sulfonic acid comprises at least one of perfluorooctyl sulfonic acid, perfluoro (2-ethoxyethane) sulfonic acid, pentafluorobenzene sulfonic acid, nafion, and aquivin. In one embodiment, the degree of C-F bond substitution C-H is greater than 70% in the fluoro-substituted hydrocarbyl sulfonic acid, fluoro-substituted hydrocarbyl sulfonic acid with an oxygen atom inserted in the chain, fluoro-substituted aryl sulfonic acid, and perfluorosulfonic acid polymer. Wherein the fluorine substituted sulfonic acid has stronger acidity (namely H is given + Capacity) while also having a large dipole moment. Preferably, the alkyl is C4-C20 alkyl and the aryl is C6-C20 aryl. Wherein, the fluorine substitution refers to that at least one of hydrogen atoms in the corresponding compound is substituted by fluorine atoms.
In an embodiment, in the ink, the mass ratio of the N-type metal oxide precursor and/or the N-type metal oxide to the fluorocarbon sulfonic acid is 20:1-1:2. Preferably, in the ink, the mass ratio of the N-type metal oxide precursor or the N-type metal oxide to the fluorocarbon sulfonic acid is 5:1. Wherein in the ink, if the amount of the fluorocarbon sulfonic acid is too small, the effect of the fluorocarbon sulfonic acid is insignificant; if the amount of the fluorocarbon sulfonic acid is too large, the ink of the subsequent film layer is difficult to spread on the film layer surface due to the low surface energy of the fluorocarbon sulfonic acid.
Among these, the solvent should be selected to be less damaging to the underlying film, and generally, a medium-high polarity solvent may be selected. In one embodiment, the solvent comprises at least one of methanol, ethanol, isopropanol, n-butanol, n-pentanol, n-hexanol, acetonitrile, cyclohexanone, and water.
At least one embodiment of the present disclosure provides a method for manufacturing a tandem electroluminescent device, including the following steps S11 to S15, and refer to fig. 1:
step S11, preparing the light emitting unit 20 on the first electrode 10.
In one embodiment, the first electrode 10 is an anode. The ITO anode may be further cleaned before the light emitting unit 20 is prepared on the ITO anode, and irradiated under UV conditions to increase work function and wettability of the ITO anode.
In one embodiment, the material of the first electrode 10 includes one or more of metal, carbon material, and metal oxide. In an embodiment, the metal comprises one or more of Al, ag, cu, mo, au, ba, ca, yb and Mg. In an embodiment, the carbon material comprises one or more of graphite, carbon nanotubes, graphene, and carbon fibers. In one embodiment, the metal oxide comprises a doped or undoped metal oxide, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or a composite electrode comprising a doped or undoped transparent metal oxide sandwiching a metal. In one embodiment, the composite electrode comprises AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, znS/Ag/ZnS, znS/Al/ZnS, tiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following. In one embodiment, the light emitting unit 20 includes a light emitting layer and at least one of a hole functional layer, an electron blocking layer, a hole blocking layer, and an electron functional layer.
It is understood that since the light emitting unit 20 includes at least one of the hole functional layer, the electron blocking layer, the hole blocking layer, and the electron functional layer, and the light emitting layer, it is also necessary to prepare at least one of the hole functional layer, the electron blocking layer, the hole blocking layer, and the electron functional layer, and the light emitting layer when preparing the light emitting unit 20.
In an embodiment, the hole-functional layer comprises a hole-transporting layer and/or a hole-injecting layer. In one embodiment, the material of the hole transport layer and/or the hole injection layer comprises at least one of TFB, cuPc, PVK, poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT: PSS, TAPC, MCC, F4-TCNQ, HATCN, 4' -tris (N-3-methylphenyl-N-phenylamino) triphenylamine, polyaniline, transition metal oxide, transition metal sulfide, transition metal stannate, doped graphene, undoped graphene, and C60.
In an embodiment, the material of the electron blocking layer includes at least one of a spirofluorene material, an arylamine material, aluminum nitride, aluminum gallium nitride and silicon nitride.
In one embodiment, the material of the hole blocking layer includes at least one of zinc oxide and rhenium oxide doped in zinc oxide. In an embodiment, the oxide of rhenium is selected from at least one of rhenium dioxide, rhenium heptaoxide, rhenium trioxide and rhenium dioxide.
In an embodiment, the electron functional layer comprises an electron transport layer and/or an electron injection layer. In an embodiment, the material of the electron transport layer and/or the electron injection layer comprises an inorganic material and/or an organic material. In an embodiment, the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, titanium lithium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannate, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate. In one embodiment, the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium.
In an embodiment, the light emitting layer is a quantum dot light emitting layer or an organic light emitting layer. In an embodiment, the material of the quantum dot light emitting layer includes at least one of quantum dots of a single structure and quantum dots of a core-shell structure. In one embodiment, the material of the single-structure quantum dot is selected from at least one of group II-VI compound, group IV-VI compound, group III-V compound and group I-III-VI compound. In one embodiment, the group II-VI compound is selected from CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe. CdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe and HgZnSTe. In one embodiment, the IV-VI compound is selected from at least one of SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe and SnPbSTe. In one embodiment, the III-V compound is selected from at least one of GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs or InAlPSb. In one embodiment, the I-III-VI compound is selected from CuInS 2 、CuInSe 2 AgInS 2 At least one of them. Wherein the core of the quantum dot with the core-shell structure comprises any one of the quantum dots with the single structure. In an embodiment, the shell material of the quantum dot of the core-shell structure includes CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS, znS and at least one of the quantum dots of the single structure. In an embodiment, the material of the organic light emitting layer includes at least one of 4,4' -bis (N-carbazole) -1,1' -biphenyl including tris [2- (p-tolyl) pyridine-C2, N) iridium (III), 4',4 "-tris (carbazole-9-yl) triphenylamine including tris [2- (p-tolyl) pyridine-C2, N) iridium, F8BT, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, polyacetylene and derivatives thereof, polyparaphenylene and derivatives thereof, polythiophene and derivatives thereof, polyfluorene and derivatives thereof.
Step S12, covering the light emitting unit 20 with the ink, and drying the ink to prepare the charge generating layer 30.
Specifically, the ink is spin-coated on the light emitting unit 20, and the ink is dried to remove the solvent in the ink, thereby obtaining the charge generating layer 30.
In another embodiment, the ink may be spin-coated after the light emitting unit 20 is coated with a polymer material. Wherein the polymer material is used to prevent the corrosion of the light emitting unit 20 by the ink. Preferably, the polymer material is selected from at least one of PEIE, PEI, PFN-Br, PFN and polyetheramine.
Wherein the hole injection layer, the hole transport layer, the electron blocking layer, the hole blocking layer, the electron transport layer, or the electron injection layer adjacent to the charge generation layer 30 together constitute a charge generation unit. In one embodiment, the thickness of the charge generating unit is 5-50 nm. Wherein the charge generation unit may generate a charge.
It is understood that the material of the charge generation layer 30 includes the N-type metal oxide and the fluorocarbon sulfonic acid.
Step S13, another light emitting unit 20 is prepared on the charge generation layer 30.
Wherein the another light emitting unit 20 also includes at least one of the hole function layer, the electron blocking layer, the hole blocking layer, and the electron function layer, and the light emitting layer. Wherein the another light emitting unit 20 prepared in step S13 may be the same as or different from the light emitting unit 20 prepared in step S11.
Step S14, forming a second electrode 40 on the other light emitting unit 20.
In one embodiment, the second electrode 40 is a cathode.
In one embodiment, the material of the second electrode 40 includes one or more of metal, carbon material, and metal oxide. In an embodiment, the metal comprises one or more of Al, ag, cu, mo, au, ba, ca, yb and Mg. In an embodiment, the carbon material comprises one or more of graphite, carbon nanotubes, graphene, and carbon fibers. In one embodiment, the metal oxide comprises a doped or undoped metal oxide, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO,or a composite electrode comprising a doped or undoped transparent metal oxide with a metal sandwiched therebetween. In one embodiment, the composite electrode comprises AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, znS/Ag/ZnS, znS/Al/ZnS, tiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following. It should be noted that, after step S13 and before step S14, steps S12 and S13 may also be repeated multiple times to prepare a greater number of light emitting units 20 and charge generating layers 30. The present disclosure does not limit the number of the light emitting units 20 and the charge generating layers 30.
Step S15, packaging the first electrode 10, the light emitting unit 20, the charge generating layer 30 and the second electrode 40 to obtain the tandem electroluminescent device 100.
Referring again to fig. 1, at least one embodiment of the present disclosure provides a tandem electroluminescent device 100, where the tandem electroluminescent device 100 includes a first electrode 10, a second electrode 40, a plurality of light emitting units 20, and a plurality of charge generating layers 30.
In one embodiment, the first electrode 10 is an anode. In one embodiment, the material of the first electrode 10 includes one or more of metal, carbon material, and metal oxide. In an embodiment, the metal comprises one or more of Al, ag, cu, mo, au, ba, ca, yb and Mg. In an embodiment, the carbon material comprises one or more of graphite, carbon nanotubes, graphene, and carbon fibers. In one embodiment, the metal oxide comprises a doped or undoped metal oxide, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or a composite electrode comprising a doped or undoped transparent metal oxide sandwiching a metal. In one embodiment, the composite electrode comprises AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, znS/Ag/ZnS, znS/Al/ZnS, tiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following.
Wherein each of the light emitting units 20 is located between the first electrode 10 and the second electrode 40. In an embodiment, each of the light emitting units 20 includes at least one of the hole functional layer, the electron blocking layer, the hole blocking layer, and the electron functional layer, and the light emitting layer.
In an embodiment, the hole-functional layer comprises a hole-transporting layer and/or a hole-injecting layer. In one embodiment, the material of the hole transport layer and/or the hole injection layer comprises at least one of TFB, cuPc, PVK, poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT: PSS, TAPC, MCC, F4-TCNQ, HATCN, 4' -tris (N-3-methylphenyl-N-phenylamino) triphenylamine, polyaniline, transition metal oxide, transition metal sulfide, transition metal stannate, doped graphene, undoped graphene, and C60.
In an embodiment, the material of the electron blocking layer includes at least one of a spirofluorene material, an arylamine material, aluminum nitride, aluminum gallium nitride and silicon nitride.
In one embodiment, the material of the hole blocking layer includes at least one of zinc oxide and rhenium oxide doped in zinc oxide. In an embodiment, the oxide of rhenium is selected from at least one of rhenium dioxide, rhenium heptaoxide, rhenium trioxide and rhenium dioxide.
In an embodiment, the electron functional layer comprises an electron transport layer and/or an electron injection layer. In an embodiment, the material of the electron transport layer and/or the electron injection layer comprises an inorganic material and/or an organic material. In an embodiment, the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, titanium lithium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannate, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate. In one embodiment, the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium.
In an embodiment, the light emitting layer is a quantum dot light emitting layer or an organic light emitting layer. In an embodiment, the material of the quantum dot light emitting layer includes at least one of quantum dots of a single structure and quantum dots of a core-shell structure. In one embodiment, the material of the single-structure quantum dot is selected from at least one of group II-VI compound, group IV-VI compound, group III-V compound and group I-III-VI compound. In one embodiment, the group II-VI compound is selected from at least one of CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe and HgZnSTe. In one embodiment, the IV-VI compound is selected from at least one of SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe and SnPbSTe. In one embodiment, the III-V compound is selected from at least one of GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs or InAlPSb. In one embodiment, the I-III-VI compound is selected from CuInS 2 、CuInSe 2 AgInS 2 At least one of them. Wherein the core of the quantum dot with the core-shell structure comprises any one of the quantum dots with the single structure. In an embodiment, the shell material of the quantum dot of the core-shell structure includes CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS, znS and at least one of the quantum dots of the single structure. In one embodiment, the material of the organic light emitting layer comprises 4,4' -bis (N-carbazole) -1,1' -biphenyl, tris [2- (p-tolyl) pyridine-C2, N) iridium (III), 4' -tris (carbazole-9-yl) triphenylamine, tris [2- (p-tolyl) pyridine-C2, N) iridium, F8BT, and diarylanthracene derivativesAt least one of stilbene aromatic derivative, pyrene derivative, fluorene derivative, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, polyacetylene and its derivative, poly-p-benzene and its derivative, polythiophene and its derivative, and polyfluorene and its derivative.
Wherein the charge generation layer 30 is disposed between two adjacent light emitting units 20. Wherein the charge generation layer 30 and the hole function layer, the electron blocking layer, the hole blocking layer, and the electron function layer adjacent to the charge generation layer 30 together constitute a charge generation unit. In one embodiment, the thickness of the charge generating unit is 5-50 nm.
Wherein the charge generation layer 30 is prepared from the ink. It is understood that the material of the charge generation layer 30 includes the N-type metal oxide and the fluorocarbon sulfonic acid. In one embodiment, the N-type metal oxide comprises MoO 3 、WO 3 、V 2 O 5 ReO (Reo) 3 At least one of them. In one embodiment, the fluorocarbon sulfonic acid comprises at least one of a fluorine substituted hydrocarbon sulfonic acid, a hydrocarbon sulfonic acid with an oxygen atom embedded in the fluorine substituted hydrocarbon chain, a fluorine substituted aryl sulfonic acid, and a perfluorinated sulfonic acid polymer. Preferably, the fluorocarbon sulfonic acid comprises at least one of perfluorooctyl sulfonic acid, perfluoro (2-ethoxyethane) sulfonic acid, pentafluorobenzene sulfonic acid, nafion, and aquivin. In one embodiment, the degree of C-F bond substitution C-H is greater than 70% in the fluoro-substituted hydrocarbyl sulfonic acid, fluoro-substituted hydrocarbyl sulfonic acid with an oxygen atom inserted in the chain, fluoro-substituted aryl sulfonic acid, and perfluorosulfonic acid polymer. Wherein the fluorine substituted sulfonic acid has stronger acidity (namely H is given + Capacity) while also having a large dipole moment. Preferably, the alkyl is C4-C20 alkyl and the aryl is C6-C20 aryl. Wherein, the fluorine substitution refers to that at least one of hydrogen atoms in the corresponding compound is substituted by fluorine atoms.
In one embodiment, the second electrode 40 is a cathode. In one embodiment, the material of the second electrode 40 includes metal, carbon material and metal oxideOne or more of the following. In an embodiment, the metal comprises one or more of Al, ag, cu, mo, au, ba, ca, yb and Mg. In an embodiment, the carbon material comprises one or more of graphite, carbon nanotubes, graphene, and carbon fibers. In one embodiment, the metal oxide comprises a doped or undoped metal oxide, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or a composite electrode comprising a doped or undoped transparent metal oxide sandwiching a metal. In one embodiment, the composite electrode comprises AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, znS/Ag/ZnS, znS/Al/ZnS, tiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following.
In an embodiment, the tandem electroluminescent device 100 may be a tandem electroluminescent device in an upright position, or may be an inverted tandem electroluminescent device 100. When the series electroluminescent device is an inverted series electroluminescent device, the directions of the first electrode and the second electrode are opposite.
The present disclosure physically mixes a deep level N-type metal oxide (N-MO) precursor or a deep level N-type metal oxide with a fluorocarbon sulfonic acid (FCSA) to form the ink, which has enhanced N-type characteristics and stronger conductivity and can reduce an energy barrier for charge generation when the ink is used to prepare a charge generation layer, and thus the tandem electroluminescent device 100. At the same time, since the fluorocarbon sulfonic acid has a large dipole moment, the work function of n-MO (i.e., the electron potential affecting the MO surface) is increased, which makes electrons from the HOMO level of the light emitting unit 20 more easily transferred to the LUMO level of MO in the charge generating layer 30, enhancing the charge generating capability of the interface between the charge generating layer 30 and the light emitting unit 20, thereby improving the light emitting performance and the lifetime of the tandem electroluminescent device 100.
Now taking the N-type metal oxide as MoO 3 The mechanism of action of n-MO and FCSA is described in detail for the example: the end functional group of CSA is sulfoAcid group-SO 3 -H, having a certain acidity. Interact with O of n-MO after mixing to give protons and weaken Mo-O bond to make part of Mo 6+ Reduction to Mo 5+ Obtaining non-stoichiometric MoO 3 。
Nonstoichiometric MoO 3 Has enhanced N-type characteristic, has stronger conductivity, and reduces the charge generation energy barrier. At the same time, since the larger dipole moment of FCSA increases the work function of n-MO (i.e., affects the electron potential of MO surface), which makes electrons from HOMO level of the light emitting unit 20 more easily transferred to LUMO level of MO in the charge generating layer 30, enhances the charge generating capability of the interface between the charge generating layer 30 and the light emitting unit 20, thereby improving the light emitting performance and the lifetime of the tandem electroluminescent device 100.
In addition, in the conventional technology, when a device is prepared based on a solution method, factors such as dissolution damage to an underlying film, high-temperature annealing damage, effective material system selection and the like need to be considered in film formation, and currently, great challenges still exist. The ink in the present disclosure is a nonaqueous ink, and can be formed into a film in an inert atmosphere, and the post-treatment conditions are mild (low-temperature annealing) without affecting the performance of the underlayer. Meanwhile, the preparation method of the present disclosure is less damaging to the lower film and device unit when preparing the tandem electroluminescent device 100.
The present disclosure is described in detail below by way of examples and comparative examples.
Example 1
(1) Dispersing 0.1g of Mo powder in 10mL of ethanol, stirring for several minutes to form a suspension, adding 1.5mL of 30% hydrogen peroxide solution into the suspension, stirring for 30min, filtering, evaporating the solvent under reduced pressure, and re-dispersing in ethanol at a concentration of 10mg/mL to obtain MoO 3 A solution.
(2) To MoO 3 Adding nafion117 solution diluted to 4mg/mL with ethanol, and controlling MoO 3 Mixing the solution and nafion117 solution at a volume ratio of 5:1, and stirring at 300rpm/min at room temperature for 2h to obtain MoO 3 And nafion, and then subsequently mixing the mixed solutionFiltering to obtain the ink.
(3) An Indium Tin Oxide (ITO) anode is cleaned, and then treated for 15min under UV conditions, so that the work function and wettability of the ITO anode are increased.
(4) PEDOT with the thickness of 30nm is spin-coated on the treated ITO anode, PSS is spin-coated on the treated ITO anode, and the ITO anode is baked for 20min at 150 ℃ in an air atmosphere.
(5) Spin-coating TFB with the thickness of 20nm on a PEDOT-PSS substrate, and baking at 180 ℃ for 60min in a nitrogen environment to obtain a hole transport layer.
(6) F8BT polymer with thickness of 60nm is spin-coated on the hole transport layer obtained in the step (5), and baked for 10min at 130 ℃ to obtain a luminescent layer.
(7) ZnO of 10nm thickness was spin-coated on the light-emitting layer obtained in (6), and annealed at 130℃for 10min.
(8) A15 nm thick PEIE (Mw-70000) ethylene glycol monomethyl ether solution was spin-coated on ZnO and baked at 130℃to prevent the ZnO from being damaged by the acidic ink obtained in (2).
(9) The ink obtained in (2) was spin-coated on PEIE to a thickness of 20nm and baked at 120℃for 15min to obtain a charge generation layer.
(10) TFB was spin-coated on the charge generation layer to a thickness of 20nm and baked at 150℃for 30min to obtain another hole transport layer.
(11) An 80nm F8BT polymer was spin-coated on the hole transport layer obtained in (10), and baked at 130℃for 15 minutes, to obtain another light-emitting layer.
(12) A cathode was obtained by vacuum deposition of LiF 1nm thick and Al 100nm thick on the light-emitting layer obtained in (11).
(13) Packaging and annealing at 80 ℃ for 30min to obtain the tandem electroluminescent device.
Example 2
Example 2 differs from example 1 in that: in (2), moO 3 The solution and nafion117 solution were mixed in a 10:1 volume ratio.
Example 3
Example 3 differs from example 1 in that: in (1), the Mo powder is changed to tungsten powder.
Example 4
Example 4 differs from example 1 in that: in (2), the nafion117 solution is changed to perfluorooctyl sulfonic acid.
Example 5
Example 5 differs from example 1 in that:
changing (6) to the following: and (3) spin-coating green light quantum dot ink with the thickness of 60nm on the hole transport layer obtained in the step (5), and baking at 130 ℃ for 10min to obtain a light-emitting layer.
Changing (11) to the following: and (3) spin-coating the green light quantum dot ink with the wavelength of 80nm on the hole transport layer obtained in the step (10), and baking at 130 ℃ for 15min to obtain another light-emitting layer.
Comparative example 1
The difference between comparative example 1 and example 1 is that: the ink prepared by the steps (1) and (2) does not contain nafion117 solution.
Comparative example 2
The difference between comparative example 2 and example 5 is that: the ink prepared by the steps (1) and (2) does not contain nafion117 solution.
The driving voltage and current efficiencies of the tandem electroluminescent devices prepared in examples 1 to 5 and comparative examples 1 to 2 described above were respectively tested using an IVL apparatus, and the lifetimes of the tandem electroluminescent devices prepared in examples 1 to 5 and comparative examples 1 to 2 described above were respectively measured using a lifetime aging apparatus, with the specific results shown in table 1 below.
Table 1 table of driving voltage, current efficiency and service life of tandem electroluminescent devices prepared in examples 1 to 5 and comparative examples 1 to 2 of the present disclosure
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Note that: the driving voltage @ J10 represents a current density of 10mA/cm 2 Corresponding driving voltage;
current efficiency @1000nit represents current efficiency at a luminance of 1000 nit;
LT95@1000nit means that the device has an initial luminance of 1000cd/m 2 Continuously lit down when the luminance decays to 95% of the initial luminance (here 950cd/m 2)The time elapsed, i.e., the lifetime of the device.
As can be seen from table 1 above, in the tandem electroluminescent devices of examples 1 to 5 of the present application, the charge generation layer was prepared from the ink containing the deep level N-type metal oxide (N-MO) precursor and the fluorocarbon sulfonic acid (FCSA), which reduced the energy barrier for charge generation, effectively enhanced the interfacial charge generation capability between N-MO and the light emitting unit, reduced the driving voltage of the tandem electroluminescent device, improved the current efficiency of the tandem electroluminescent device, and prolonged the luminance decay lifetime of the tandem electroluminescent device, thereby improving the light emitting performance and the service life of the tandem electroluminescent device.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples represent only a few embodiments of the present disclosure, which are described in more detail and detail, but are not to be construed as limiting the scope of the disclosure. It should be noted that variations and modifications can be made by those skilled in the art without departing from the spirit of the disclosure, which are within the scope of the disclosure. Accordingly, the scope of protection of the present disclosure should be determined by the following claims.

Claims (11)

1. An ink, wherein the ink comprises fluorocarbon sulfonic acid and a solvent, and the ink further comprises at least one of an N-type metal oxide precursor and an N-type metal oxide.
2. The ink of claim 1, wherein the N-type metal oxide comprises MoO 3 、WO 3 、V 2 O 5 ReO (Reo) 3 At least one of them.
3. The ink of claim 1, wherein the fluorocarbon sulfonic acid comprises at least one of a fluorine substituted hydrocarbon-based sulfonic acid, a hydrocarbon-based sulfonic acid with an oxygen atom embedded in the fluorine substituted hydrocarbon-based chain, a fluorine substituted aryl sulfonic acid, and a perfluorinated sulfonic acid polymer;
preferably, the alkyl is C4-C20 alkyl, and the aryl is C6-C20 aryl;
By fluorine substitution is meant that at least one of the hydrogen atoms in the corresponding compound is replaced by a fluorine atom.
4. The ink of any one of claims 1 to 3, wherein the fluorocarbon sulfonic acid comprises at least one of perfluorooctyl sulfonic acid, perfluoro (2-ethoxyethane) sulfonic acid, pentafluorobenzenesulfonic acid, nafion, and aquivin.
5. The ink according to any one of claims 1 to 4, wherein in the ink, the mass ratio of the N-type metal oxide precursor and/or the N-type metal oxide to the fluorocarbon sulfonic acid is 20:1 to 1:2.
6. The ink of any one of claims 1 to 5, wherein the solvent comprises at least one of methanol, ethanol, isopropanol, n-butanol, n-pentanol, n-hexanol, acetonitrile, cyclohexanone, and water.
7. The preparation method of the tandem electroluminescent device is characterized by comprising the following steps:
preparing a light emitting unit on the first electrode, wherein the light emitting unit comprises a light emitting layer and at least one of a hole functional layer, an electron blocking layer, a hole blocking layer and an electron functional layer;
covering the light emitting unit with the ink according to any one of claims 1 to 6, and drying the ink to prepare a charge generating layer;
Preparing another light emitting unit on the charge generating layer; and
and preparing a second electrode on the other light emitting unit.
8. The method for manufacturing a tandem electroluminescent device as claimed in claim 7, wherein the coating of the light emitting unit with the ink as claimed in any one of claims 1 to 6 comprises the steps of:
spin-coating the ink according to any one of claims 1 to 6 on the light emitting unit;
or, spin-coating the ink according to any one of claims 1 to 6 after the light-emitting unit is covered with a polymer material for preventing the ink according to any one of claims 1 to 6 from corroding the light-emitting unit;
preferably, the polymer material is selected from at least one of PEIE, PEI, PFN-Br, PFN and polyetheramine.
9. The method of manufacturing a tandem electroluminescent device according to claim 7, wherein the first electrode is an anode and the second electrode is a cathode;
when the series electroluminescent device is an inverted series electroluminescent device, the directions of the first electrode and the second electrode are opposite.
10. The method of manufacturing a tandem electroluminescent device according to any one of claims 7 to 9, wherein the hole-functional layer comprises a hole-transporting layer and/or a hole-injecting layer, and the material of the hole-transporting layer and/or the hole-injecting layer comprises at least one of TFB, cuPc, PVK, poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT: PSS, TAPC, MCC, F4-TCNQ, HATCN, 4' -tris (N-3-methylphenyl-N-phenylamino) triphenylamine, polyaniline, transition metal oxide, transition metal sulfide, transition metal tin oxide, doped graphene, undoped graphene, and C60; and/or
The material of the electron blocking layer comprises at least one of spirofluorene materials, arylamine materials, aluminum nitride, aluminum gallium nitride and silicon nitride; and/or
The material of the hole blocking layer comprises at least one of zinc oxide and rhenium oxide doped in the zinc oxide, wherein the rhenium oxide is at least one of rhenium dioxide, rhenium heptaoxide, rhenium trioxide and rhenium dioxide; and/or
The electronic functional layer comprises an electronic transmission layer and/or an electronic injection layer, and the materials of the electronic transmission layer and/or the electronic injection layer comprise inorganic materials and/or organic materials; the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, titanium lithium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannate, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide and barium titanate, and the doped element comprises one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium; and/or
The light-emitting layer is a quantum dot light-emitting layer or an organic light-emitting layer; the material of the quantum dot luminescent layer comprises at least one of single-structure quantum dots and core-shell structure quantum dots, wherein the material of the single-structure quantum dots is selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds, wherein the II-VI group compounds are selected from at least one of CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe and HgZnSte, the IV-VI group compounds are selected from at least one of SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe and SnPbSTe, and the III-V group compounds are selected from GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPS b. GaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs or InAlPSb, the group I-III-VI compound being selected from CuInS 2 、CuInSe 2 AgInS 2 At least one of (a) and (b); the core of the quantum dot with the core-shell structure comprises any one of the quantum dots with the single structure, and the shell material of the quantum dot with the core-shell structure comprises CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS, znS and at least one of the quantum dots with the single structure; the material of the organic light-emitting layer comprises at least one of 4,4' -bis (N-carbazole) -1,1' -biphenyl, tris [2- (p-tolyl) pyridine-C2, N) iridium (III), 4' -tris (carbazole-9-yl) triphenylamine, tris [2- (p-tolyl) pyridine-C2, N) iridium, F8BT, diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and derivatives thereof, poly-p-benzene and derivatives thereof, polythiophene and derivatives thereof, polyfluorene and derivatives thereof; and/or
The material of the first electrode and/or the second electrode comprises one or more of a metal, a carbon material, and a metal oxide, the metal comprising one or more of Al, ag, cu, mo, au, ba, ca, yb and Mg; the carbon material comprises one or more of graphite, carbon nanotubes, graphene and carbon fibers; the metal oxide comprises one or more of doped or undoped metal oxide, ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or a composite electrode comprising doped or undoped transparent metal oxide and metal sandwiched therebetween, and the composite electrode comprises AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, znS/Ag/ZnS, znS/Al/ZnS, tiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following.
11. The serial electroluminescent device is characterized by comprising a first electrode, a second electrode, a plurality of light-emitting units and a plurality of charge generation layers, wherein each light-emitting unit is positioned between the first electrode and the second electrode, and the charge generation layers are arranged between two adjacent light-emitting units;
wherein the charge generation layer is prepared from the ink according to any one of claims 1 to 6.
CN202211292750.1A 2022-10-21 2022-10-21 Ink, serial electroluminescent device and preparation method thereof Pending CN117750799A (en)

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