CN117790604A - Solar blind detector based on GaN/AlScN heterojunction and preparation method thereof - Google Patents
Solar blind detector based on GaN/AlScN heterojunction and preparation method thereof Download PDFInfo
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- 238000004544 sputter deposition Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
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- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
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Abstract
A solar blind detector based on GaN/AlScN heterojunction comprises a substrate, a GaN layer, an AlScN layer and an electrode, wherein the GaN layer and the AlScN layer form the GaN/AlScN heterojunction. The invention also provides a preparation method thereof, in the invention, conduction band offset and valence band offset are formed at the heterojunction interface of GaN/AlScN, electrons are diffused from AlScN into GaN, holes are diffused from GaN into AlScN, a built-in electric field is formed at the heterojunction interface, when ultraviolet light irradiates, incident light is absorbed and photo-generated carriers are generated, the photo-generated carriers are swept to the upper electrode and the lower electrode under the action of the built-in electric field, and photocurrent is generated in the circuit. Because of the ferroelectricity of AlScN, the depolarization field is still remained after the electric field is removed, and the direction of the depolarization field is consistent with the direction of the built-in electric field in the polarization state, so that the built-in electric field strength is enhanced, and the width of the depletion region is enlarged. Thereby greatly promoting the separation and transportation of the photo-generated carriers, enlarging the photoelectric current and improving the response rate.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectric devices, and particularly relates to a solar blind detector based on a GaN/AlScN heterojunction and a preparation method thereof.
Background
In the ultraviolet spectrum, light in the wavelength range of 200nm-280nm is absorbed by the earth's atmosphere, so that this band of light does not naturally exist within the atmosphere, and thus devices that detect this band of light are also known as solar blind detectors. The solar blind detector has the characteristics of excellent anti-interference capability, higher sensitivity and the like, and is often applied to the aspects of short-wave communication, automatic driving, fire early warning, new energy and the like. In recent years, the limit of solar blind detectors is broken through continuously in the industry, and the requirements for the solar blind detectors are also developed towards the directions of short wavelength, high response rate, high responsivity, high detection rate and the like, so that devices such as solar blind detectors combined by different wide-bandgap semiconductors, solar blind detectors based on superlattices and the like are endlessly layered.
The solar blind detector can be divided into a thermal detector and a photodetector, and the photodetector further comprises a photoconductive type and a photovoltaic type. The photoconductive type is operated by changing the conductivity of the material by means of carriers in the incident photoexcitation material, while the photovoltaic type is operated by means of the effect of light that causes a potential difference between different parts of the inhomogeneous semiconductor or semiconductor and metal combination. Photovoltaic type detectors can operate without an external power source and are therefore often referred to as self-powered type detectors. The structure of the photovoltaic detector can be classified into a solid type and a liquid type. Wherein the solid type mainly includes a pn junction type, a heterojunction type, a schottky junction type, etc., and the liquid type mainly is a photoelectrochemical type. Self-powered detectors generally exhibit lower dark current and faster response speed in terms of detector performance. Although the solar blind detector studied at present can detect solar blind ultraviolet light, the response speed, the precision and other device performances of the detector still need to be further improved.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a solar blind detector based on a GaN/AlScN heterojunction and a preparation method thereof, which mainly solve one or more of the problems of interface energy level mismatch, serious interface carrier recombination, insufficient responsivity and detection precision and the like of the heterojunction solar blind detector.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a solar blind detector based on GaN/AlScN heterojunction comprises a substrate, a GaN layer, an AlScN layer and an electrode, wherein the GaN layer and the AlScN layer form the GaN/AlScN heterojunction.
In one embodiment, the GaN layer has a thickness of 200nm to 300nm and the AlScN layer has a thickness of 100nm to 200nm.
In one embodiment, the AlScN has the expression Al 1-x Sc x And N and x represent atomic percentages of Sc in Al and Sc, and the value of x is 10% -30%.
The invention also provides a preparation method of the solar blind detector based on the GaN/AlScN heterojunction, which comprises the following steps:
step 1, epitaxially growing the GaN layer on the substrate;
step 2, epitaxially growing the AlScN layer on the GaN layer;
and 3, preparing electrodes on the GaN layer and the AlScN layer respectively.
In one embodiment, the step 1 uses TMGa or TEGa as Ga source, high purity N 2 As an N source, the GaN layer was epitaxially grown using an MOCVD process, with a sample growth temperature of 400-600 ℃.
In one embodiment, the step 2 epitaxially grows the AlScN layer on a part of the GaN layer, and prepares an electrode on another part of the GaN layer.
In one embodiment, the step 2 uses an AlSc alloy target as a sputtering target, removes surface impurities of the substrate by pre-sputtering, and then introduces argon and nitrogen to grow an AlScN film on the sample surface, wherein the vacuum degree is 9×10 -8 Pa～9*10 -7 Pa, the sputtering power is 200W-400W, the sputtering temperature is 300 ℃ to 500 ℃, and the sputtering time is determined according to the film thickness.
In one embodiment, the step 2, after epitaxially growing the AlScN layer, places the resulting sample under nitrogen atmosphere at a heating rate of 5 ℃/s to 15 ℃/s, anneals at a temperature of 600 ℃ to 800 ℃ for 5 to 10 minutes, and cools under pure nitrogen.
In one embodiment, in the step 3, electrodes are prepared on the GaN layer and the AlScN layer respectively by using an electron beam evaporation method through a mask, the two electrodes use the same metal or alloy, and the thickness of the electrodes is 50 nm-100 nm.
Compared with the prior art, the invention has the beneficial effects that:
(1) The self-driven solar blind detector based on GaN/AlScN heterojunction does not use common AlGaN and Ga 2 O 3 Such ferroelectric materials are used as heterojunction materials for solar blind detectors, but AlScN (aluminum scandium nitrogen). AlScN can adjust the intensity of the built-in electric field and the width of the heterojunction depletion region through the depolarization field, so that the separation and transportation of photo-generated carriers are promoted, and the response rate is improved.
(2) In the present invention, alScN is used as a heterojunction material, which has high conductivity that other ferroelectric materials do not have, so that the device performance is not affected by low conductivity.
(3) The AlScN and the GaN have good lattice matching degree, the band gap of the AlScN can be changed by changing the Sc component, so that the band gaps of the two materials are continuously close, the mutation degree of the interface energy level is reduced, the interface energy level becomes matched, the interface carrier recombination is further reduced, and the problems of unmatched interface energy levels and serious interface carrier recombination are solved. Meanwhile, gaN can be used as an induction layer for material growth, so that the growth quality of the AlScN layer is improved, and the excellent device performance of the AlScN layer is ensured.
(4) The high spontaneous polarization (related to AlScN lattice structure composition) and piezoelectric polarization of AlScN compared to conventional AlGaN/GaN heterojunctions results in a multiple increase in carrier density of the two-dimensional electron gas formed at the GaN/AlScN heterointerface. The GaN/AlScN heterojunction has high mobility and high carrier density, and can improve the transportation of photo-generated carriers, improve the ratio of photocurrent to dark current, and further improve the responsivity, the precision and the anti-interference capability of the solar blind detector.
(5) The preparation process is simple, the material cost is low, and the preparation process is environment-friendly and safe. The magnetron sputtering method, ALD, electron beam evaporation method, MOCVD and other film forming methods involved in the preparation process are common methods in the semiconductor CMOS process, can be effectively integrated with the existing CMOS process, can effectively reduce the production cost on the basis of ensuring the excellent performance of devices, and accords with the development rule of the moore's law.
Drawings
Other features, objects and advantages of the present invention will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the following drawings.
Fig. 1 is a schematic structural diagram of a self-driven solar blind detector based on a GaN/AlScN heterojunction.
Fig. 2 is a schematic diagram of a manufacturing process flow of the self-driven solar blind detector based on the GaN/AlScN heterojunction.
The marks in the figure: 1 is a substrate, 2 is a GaN layer, 3 is an AlScN layer, 4 is an electrode on the GaN layer, and 5 is an electrode on the AlScN layer.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings and examples.
As described above, the existing GaN-based heterojunction solar blind detector has low response speed and response, mismatched interface energy levels, serious interface carrier recombination and insufficient detection precision. And most ferroelectric materials and GaN have lattice mismatch, so that the quality of a heterojunction interface is poor, and the performance of the device is not optimistic.
According to the existing problems, in the invention, the GaN/AlScN heterojunction is used as the basis of the solar blind detector, the GaN is well matched with the AlScN interface, and the device performance is remarkably improved. As shown in fig. 1, the solar blind detector based on GaN/AlScN heterojunction comprises a substrate 1, a GaN layer 2, an AlScN layer 3, an electrode 4 on the GaN layer and an electrode 5 on the barrier layer. Wherein the GaN layer 2 and the AlScN layer 3 form a GaN/AlScN heterojunction.
According to the structure, namely, the heterojunction solar blind detector disclosed by the invention uses a GaN/AlScN heterojunction, and AlScN has different high conductivities of other ferroelectric materials, so that the device performance is not influenced by low conductivities; the GaN/AlScN heterojunction has high mobility and high carrier concentration, and can improve the transportation of photo-generated carriers and the ratio of photocurrent to dark current, so as to improve the responsivity, the precision and the anti-interference capability of the solar blind detector; the AlScN and the GaN have good lattice matching degree, the band gap of the AlScN can be changed by changing the Sc component, so that the band gaps of the two materials are continuously close, the abrupt change degree of the interface energy level is reduced, the interface carrier recombination is further reduced, and the problems of the unmatched interface energy level and serious interface carrier recombination are solved. Most importantly, alScN adjusts the intensity of a built-in electric field and the width of a heterojunction depletion region through a depolarization field, promotes separation and transportation of photogenerated carriers, and improves response speed. Finally, the solar blind detector adopting the GaN/AlScN heterojunction has higher performance and flexibility.
The specific principle is as follows: when the heterojunction is formed by the GaN and AlScN, conduction band offset and valence band offset are formed at the heterojunction interface of the GaN and AlScN, electrons are diffused into the GaN from AlScN, holes are diffused into AlScN from the GaN, a built-in electric field is formed at the heterojunction interface, when ultraviolet light is irradiated, incident light is absorbed and photo-generated carriers are generated, the photo-generated carriers are swept to the upper electrode and the lower electrode under the action of the built-in electric field, and photocurrent is generated in the circuit. Because of the ferroelectricity of AlScN, the depolarization field is still remained after the electric field is removed, and the direction of the depolarization field is consistent with the direction of the built-in electric field in the polarization state, so that the built-in electric field strength is enhanced, and the width of the depletion region is enlarged. Thereby greatly promoting the separation and transportation of the photo-generated carriers, enlarging the photoelectric current and improving the response rate.
In some embodiments of the invention, the GaN layer 2 has a thickness of 200nm-300nm and the AlScN layer 3 has a thickness of 100 nm-200 nm.
In some embodiments of the invention, alScN has the expression Al 1-x Sc x And N and x represent atomic percentages of Sc in Al and Sc, and the value of x is 10% -30%. Using Al 1-x Sc x The N ferroelectric film is used as a heterojunction material, the AlScN adjusts the strength of a built-in electric field and the width of a heterojunction depletion region through a depolarization field, so that the separation and transportation of photo-generated carriers are promoted, and the response rate of the photo-generated carriers is improved. The band gap of AlScN is changed by changing the content of Sc, so that the band gap of AlScN and GaN is continuously close, the abrupt change degree of the interface energy level is reduced, and the interface energy level is matched. Specifically, in AlScN, as the Sc content increases, the band gap width of AlScN decreases, approaching GaN.
Compared with other heterojunction solar blind detectors, the solar blind detector based on the GaN/AlScN heterojunction is more focused on improving the response speed and the responsivity of the detector and solving the problem of interface carrier recombination.
The preparation method of the GaN/AlScN heterojunction solar blind detector is provided, can be compatible with the existing CMOS technology, reduces the production cost, improves the performance, simultaneously gives consideration to environmental friendliness, has higher operability and practicality, and particularly referring to FIG. 2, and mainly comprises the following steps:
step 1, epitaxially growing the GaN layer 2 on the substrate 1.
And 2, epitaxially growing the AlScN layer 3 on the GaN layer 2.
And 3, preparing an electrode 4 on the GaN layer 2, and preparing an electrode 5 on the barrier layer on the AlScN layer 3.
In some embodiments of the present invention, the substrate 1 may be Si, sapphire, gallium nitride, etc., and the substrate 1 may be subjected to surface pretreatment prior to preparation, which may be specifically as follows: the substrate 1 is fixed in a cleaning frame for cleaning, and the cleaned substrate is dried by a nitrogen gun for later use.
Illustratively, the substrate 1 is fixed in a cleaning frame for cleaning, which can be divided into four steps: firstly, placing a substrate 1 in deionized water for ultrasonic cleaning for 10min; secondly, placing the substrate 1 subjected to ultrasonic cleaning by deionized water in acetone for cleaning for 10-15min; then placing the substrate 1 cleaned by the acetone in ethanol for ultrasonic cleaning for 10-15min; and finally, placing the substrate 1 in deionized water for ultrasonic cleaning for 10-15min, wherein the ultrasonic frequency is set to be 80-100w. Through the cleaning steps, dust, organic impurities and the like on the surface of the sample can be removed.
In some embodiments of the present invention, gaN layer 2 is epitaxially grown using a Metal Organic Chemical Vapor Deposition (MOCVD) technique. Trimethylgallium (TMGa) and Triethylgallium (TEGa) are common Ga sources in MOCVD technology, and the invention adopts TMGa or TEGa as Ga source, high purity N 2 As an N source, the growth temperature of the sample is about 400-600 ℃, and the thickness of the obtained GaN layer 2 is 200-300 nm.
In some embodiments of the invention, the AlScN layer 3 is epitaxially grown using magnetron sputtering techniques or molecular beam epitaxy deposition processes, for example, for magnetron sputtering techniques: a portion of the area of the upper surface of the GaN layer 2, approximately one quarter of the area for growing the electrode 4 on the GaN layer, was masked with a high temperature tape before placing the sample. An AlSc alloy target is used as a sputtering target, surface impurities of a substrate are removed through pre-sputtering (5 min), argon and nitrogen are introduced, and an AlScN film is grown on the upper surface of the GaN layer 2, wherein the vacuum degree is 9 x 10 -8 Pa～9*10 -7 Pa, the sputtering power is 200W-400W, the sputtering temperature is 300 ℃ to 500 ℃, and the ratio of nitrogen to argon is 3:1. the sputtering time is determined according to the film thickness, and the thickness of the AlScN layer 3 in this example is 100nm to 200nm.
In some embodiments of the present invention, the sample after the AlScN layer 3 is grown is subjected to rapid thermal annealing treatment, specifically, the sample is placed in a rapid annealing furnace and placed under a nitrogen atmosphere, the heating rate is 5 ℃/s to 15 ℃/s, the annealing temperature is 600 ℃ to 800 ℃ and the annealing is performed for 5 to 10 minutes, and the sample is cooled under pure nitrogen (typical flow rate is 0.8L/min). The rapid thermal annealing can improve the AlScN film quality, thereby improving the performance of the heterojunction device.
In some embodiments of the invention, the electrodes may be prepared by the following method: electrode 4 on the GaN layer was prepared on GaN layer 2 and electrode 5 on the AlScN layer was prepared on AlScN layer 3 by electron beam evaporation through a mask. The two electrodes are preferably made of the same metal or alloy, the metal is Au, the alloy is Ti/Au or Ni/Au, and the thickness of the electrodes is 50 nm-100 nm.
In the ultraviolet spectrum, light with the wavelength range of 200nm-280nm is absorbed by the earth atmosphere, so that the light with the wave band does not exist naturally in the atmosphere, and therefore, the light can be transmitted and received in the wave band, and the solar blind detector based on the GaN/AlScN heterojunction can be applied to scenes with high response speed requirements, such as short-wave communication, automatic driving, fire early warning, new energy sources and the like.
Claims (10)
1. A solar blind detector based on GaN/AlScN heterojunction comprises a substrate, a GaN layer, an AlScN layer and an electrode, and is characterized in that the GaN layer and the AlScN layer form the GaN/AlScN heterojunction.
2. The solar blind detector based on GaN/AlScN heterojunction as claimed in claim 1, wherein the thickness of the GaN layer is 200nm-300nm and the thickness of the AlScN layer is 100 nm-200 nm.
3. The solar blind detector based on GaN/AlScN heterojunction as claimed in claim 1 or 2, wherein the AlScN is expressed as Al 1-x Sc x And N and x represent atomic percentages of Sc in Al and Sc, and the value of x is 10% -30%.
4. The method for manufacturing the solar blind detector based on the GaN/AlScN heterojunction, as claimed in claim 1, is characterized by comprising the following steps:
step 1, epitaxially growing the GaN layer on the substrate;
step 2, epitaxially growing the AlScN layer on the GaN layer;
and 3, preparing electrodes on the GaN layer and the barrier layer respectively.
5. The method according to claim 4, wherein in step 1, TMGa or TEGa is used as Ga source, and high purity N is used as Ga source 2 As an N source, the GaN layer was epitaxially grown using an MOCVD process, with a sample growth temperature of 400-600 ℃.
6. The method according to claim 4, wherein in step 2, the AlScN layer is epitaxially grown on a part of the GaN layer, and an electrode is formed on the other part of the GaN layer.
7. The method according to claim 4 or 6, wherein in step 2, the AlSc alloy target is used as a sputtering target, impurities on the surface of the substrate are removed by pre-sputtering, and then argon and nitrogen are introduced to grow an AlScN film on the surface of the sample, wherein the vacuum degree is 9 x 10 -8 Pa～9*10 -7 Pa, the sputtering power is 200W-400W, the sputtering temperature is 300 ℃ to 500 ℃, and the sputtering time is determined according to the film thickness.
8. The method according to claim 4, wherein the step 2, after epitaxially growing the AlScN layer, comprises subjecting the obtained sample to a nitrogen atmosphere at a heating rate of 5 ℃/s to 15 ℃/s, an annealing temperature of 600 ℃ to 800 ℃ for 5 to 10 minutes, and cooling under pure nitrogen.
9. The preparation method according to claim 4, wherein the step 3 is to prepare electrodes on the GaN layer and the AlScN layer respectively by electron beam evaporation through a mask, the electrodes are made of the same metal or alloy, and the thickness of the electrodes is 50 nm-100 nm.
10. The use of the solar blind detector based on GaN/AlScN heterojunction as claimed in claim 1 for short-wave communication, automatic driving, fire warning.
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