CN117784528A - Overlay deviation compensation method - Google Patents
Overlay deviation compensation method Download PDFInfo
- Publication number
- CN117784528A CN117784528A CN202211153274.5A CN202211153274A CN117784528A CN 117784528 A CN117784528 A CN 117784528A CN 202211153274 A CN202211153274 A CN 202211153274A CN 117784528 A CN117784528 A CN 117784528A
- Authority
- CN
- China
- Prior art keywords
- compensation
- fin structure
- etching deviation
- value
- deviation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000005530 etching Methods 0.000 claims abstract description 151
- 238000001259 photo etching Methods 0.000 claims abstract description 59
- 229920002120 photoresistant polymer Polymers 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 16
- 238000001459 lithography Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Abstract
A method of compensating for overlay bias, comprising: providing a wafer; performing first precompensation and second precompensation on the photoetching machine; forming an initial fin structure on the wafer, wherein the sum of the compensation value of the first precompensation and the previous first etching deviation of the initial fin structure is 0; acquiring a first etching deviation of an initial fin structure, wherein the first etching deviation is the same as a compensation value of a second precompensation; performing third compensation on the photoetching machine according to the first etching deviation; performing fourth pre-compensation on the photoetching machine; after third compensation and fourth pre-compensation are carried out on the photoetching machine, the initial fin structure is partially etched to form a fin structure, the sum of the compensation value of the fourth pre-compensation and the compensation value of the second pre-compensation is 0, and the compensation value of the second pre-compensation is the same as the previous second etching deviation of the fin structure; and obtaining a second etching deviation of the fin structure, wherein the value of the second etching deviation is 0. The method improves overlay accuracy.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a compensation method for overlay deviation.
Background
Photolithography is a critical technique in semiconductor fabrication that enables transfer of patterns from a reticle to a wafer surface to form a semiconductor product that meets design requirements. In the photoetching process, firstly, through an exposure step, light irradiates a silicon wafer coated with photoresist through a light-transmitting or light-reflecting area in a mask plate and performs photochemical reaction with the photoresist; then, through a developing step, a photoetching pattern is formed by utilizing the dissolution degree of photosensitive and non-photosensitive photoresist to a developer, so that transfer of a mask pattern is realized; then, the silicon wafer is etched based on the photoetching pattern formed by the photoresist layer through an etching step, and the mask pattern is further transferred to the silicon wafer.
However, the overlay accuracy of the pattern transferred onto the silicon wafer needs to be improved.
Disclosure of Invention
The invention solves the technical problem of providing a compensation method for overlay deviation so as to improve the overlay accuracy of patterns transferred to a silicon wafer.
In order to solve the above technical problems, the technical solution of the present invention provides a method for compensating overlay deviation, including: providing a wafer; performing first precompensation and second precompensation on the photoetching machine; after first pre-compensation and second pre-compensation are carried out on the photoetching machine, an initial fin structure is formed on the wafer, and the sum of a compensation value of the first pre-compensation and a previous first etching deviation of the initial fin structure is 0; acquiring a first etching deviation of an initial fin structure, wherein the first etching deviation is the same as a compensation value of a second precompensation; performing third compensation on the photoetching machine according to the first etching deviation; performing fourth pre-compensation on the photoetching machine; after third compensation and fourth pre-compensation are carried out on the photoetching machine, the initial fin structure is partially etched to form a fin structure, the sum of the compensation value of the fourth pre-compensation and the compensation value of the second pre-compensation is 0, and the compensation value of the second pre-compensation is the same as the previous second etching deviation of the fin structure; and obtaining a second etching deviation of the fin structure, wherein the value of the second etching deviation is 0.
Optionally, the method for acquiring the previous first etching deviation includes: forming a first photoresist pattern on a wafer; after aligning the photoetching machine, measuring and obtaining position information and size information of the first photoresist pattern; forming an initial fin structure on the wafer by taking the first photoresist pattern as a mask; measuring and acquiring position information and size information of the initial fin structure; and acquiring a first difference value between the position information and the size information of the first photoresist pattern and the position information and the size information of the initial fin structure, wherein the first difference value is the previous first etching deviation.
Optionally, the method for acquiring the previous second etching deviation includes: forming a second photoresist pattern on the initial fin structure; after aligning the photoetching machine, acquiring position information and size information of a second photoresist pattern; etching the initial fin structure by taking the second photoresist pattern as a mask, and forming a fin structure on the wafer; measuring and acquiring position information and size information of the fin structure; and acquiring second difference values of the position information and the size information of the second photoresist pattern and the position information and the size information of the fin structure, wherein the second difference values are the previous second etching deviation.
Optionally, after forming the fin structure, further includes: performing fifth compensation on the photoetching machine; and after fifth compensation is carried out on the photoetching machine, forming a grid structure on the fin structure, wherein the grid structure spans across the fin structure, and the sum of a compensation value of the fifth compensation and the previous third etching deviation of the grid structure is 0.
Optionally, the method for obtaining the previous third etching deviation includes: forming a third photoresist pattern on the fin structure; after aligning the photoetching machine, acquiring position information and size information of a third photoresist pattern; forming a grid structure on the fin part structure by taking the third photoresist pattern as a mask; measuring and acquiring position information and size information of the grid structure; and acquiring a third difference value between the position information and the size information of the third photoresist pattern and the position information and the size information of the gate structure, wherein the third difference value is the previous third etching deviation.
Optionally, the method further comprises: and obtaining a third etching deviation of the grid structure, wherein the value of the third etching deviation is 0.
Optionally, the method further comprises: forming a metal layer on the gate structure; the compensation value for compensating the lithography machine before forming the metal layer is 0.
Optionally, the method further comprises: and obtaining a fourth etching deviation of the metal layer, wherein the value of the fourth etching deviation is 0.
Optionally, the method for obtaining the first etching deviation of the initial fin structure includes: and obtaining the difference value of the position information and the size information between the photoresist pattern and the initial fin structure pattern, namely obtaining the first etching deviation of the initial fin structure.
Optionally, the method for obtaining the second etching deviation of the fin structure includes: and obtaining the difference value of the position information and the size information between the photoresist pattern and the fin structure pattern, namely obtaining the second etching deviation of the fin structure.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
the technical scheme of the invention provides a compensation method of overlay deviation, which comprises the steps of carrying out first pre-compensation and second pre-compensation on a photoetching machine before an initial fin structure is formed, wherein the sum of a compensation value of the first pre-compensation and a previous first etching deviation of the initial fin structure is 0, and a compensation value of the second pre-compensation is the same as a previous second etching deviation of the fin structure. Therefore, after the first etching deviation of the formed initial fin structure is identical to the second pre-compensated compensation value, and the first etching deviation is transferred to the fin structure layer, the sum of the fourth pre-compensated compensation value and the second pre-compensated compensation value is 0, so that the sum of the third compensated compensation value and the fourth pre-compensated compensation value is 0, the value of the second etching deviation of the fin structure obtained next is also 0, and when the subsequent gate structure is formed, compensation of the photoetching machine according to the second etching deviation of the fin structure is not needed. Therefore, the number of layers of the first etching deviation and the second etching deviation transmitted downwards is simplified, the compensation process is simplified, the compensation value is smaller, the photoetching machine is easy to debug and compensate, the situation that the compensation value is too large to easily occur is avoided, and the compensation efficiency is improved.
Drawings
Fig. 1 is a flow chart of a method for compensating overlay deviation according to an embodiment of the invention.
Detailed Description
As described in the background art, the overlay accuracy of the pattern transferred onto the silicon wafer needs to be improved.
Specifically, when forming a plurality of layers of structures on a wafer, it is necessary to compensate the etching deviation of the front layer structure to the formation process of the lower layer structure. For example, the following processes are performed in order on a wafer: forming an initial fin structure on a wafer, removing part of the initial fin structure to form the fin structure, forming a gate structure on the fin structure and forming a metal layer on the gate structure, wherein the etching deviation of the initial fin structure is obtained after the initial fin structure is formed and is transmitted to the next layer, namely, the sum of the etching deviation of the initial fin structure and the etching deviation of the fin structure is obtained after the fin structure is formed, and the like, the sum of the etching deviation of the initial fin structure, the etching deviation of the fin structure and the etching deviation of the gate structure is obtained after the gate structure is formed, and the photoetching machine needs to compensate according to the sum of the etching deviation of the initial fin structure, the etching deviation of the fin structure and the etching deviation of the gate structure in the process of transmitting the sum of the etching deviation of the initial fin structure to the metal layer.
However, due to the influence of the etching process, the fin portion structure or the gate structure is easy to incline at the edge of the wafer to generate larger deviation, when patterns are transferred layer by layer, the deviation is transferred layer by layer, and when a metal layer is formed, the situation that a photoetching machine is required to perform larger compensation once can occur. On one hand, the photoetching machine performs larger compensation once, the photoetching machine needs to be greatly adjusted, and the cost is larger; on the other hand, the one-time large compensation may exceed the compensation range of the lithography machine, so that the compensation cannot be accurately performed.
In order to solve the above problem, a scheme is generally adopted at present that, when a photoresist pattern of a fin structure is formed by removing part of an initial fin structure, for example, the photoresist pattern is formed by the photoresist pattern, that is, compensation of etching deviation of the initial fin structure and pre-compensation of the fin structure are performed on the photoresist, and a compensation value of the pre-compensation of the fin structure is a negative value of the etching deviation of the fin structure, so that after the fin structure is formed, only the etching deviation of the initial fin structure is obtained, but not the etching deviation of the fin structure is obtained, and the pre-compensation of the fin structure counteracts the etching deviation of the fin structure; then, when a photoresist pattern of a grid structure is formed on the fin structure, only the compensation of the etching deviation of the initial fin structure and the pre-compensation of the grid structure are needed to be carried out on the photoetching machine, wherein the compensation value of the pre-compensation of the grid structure is a negative value of the etching deviation of the grid structure, so that after the grid structure is formed, only the etching deviation of the initial fin structure is obtained, but not the etching deviation of the grid structure is obtained, and the pre-compensation of the grid structure counteracts the etching deviation of the grid structure; when the photoresist pattern of the metal layer is formed on the gate structure, the photoetching machine is compensated for the etching deviation of the initial fin structure, and the etching deviation of the fin structure and the etching deviation of the gate structure are not required to be compensated. The pre-compensation of the fin structure and the pre-compensation of the gate structure are empirical measurements. The process reduces the compensation value for the lithographic machine, however the compensation process is somewhat complex.
In order to solve the above problems, the present disclosure provides a method for compensating overlay deviation, which performs a first pre-compensation and a second pre-compensation on a lithography machine before forming an initial fin structure, wherein a sum of a compensation value of the first pre-compensation and a previous first etching deviation of the initial fin structure is 0, and a compensation value of the second pre-compensation is the same as a previous second etching deviation of the fin structure. Therefore, after the first etching deviation of the formed initial fin structure is identical to the second pre-compensated compensation value, and the first etching deviation is transferred to the fin structure layer, the sum of the fourth pre-compensated compensation value and the second pre-compensated compensation value is 0, so that the sum of the third compensated compensation value and the fourth pre-compensated compensation value is 0, the value of the second etching deviation of the fin structure obtained next is also 0, and when the subsequent gate structure is formed, compensation of the photoetching machine according to the second etching deviation of the fin structure is not needed. Therefore, the number of layers of the first etching deviation and the second etching deviation transmitted downwards is simplified, the compensation process is simplified, the compensation value is smaller, the photoetching machine is easy to debug and compensate, the situation that the compensation value is too large to easily occur is avoided, and the compensation efficiency is improved.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 is a flow chart of a method for compensating overlay deviation according to an embodiment of the invention.
Referring to fig. 1, the method for compensating overlay deviation includes:
step S10: providing a wafer;
step S20: performing first precompensation and second precompensation on the photoetching machine;
step S30: after first pre-compensation and second pre-compensation are carried out on the photoetching machine, an initial fin structure is formed on the wafer, and the sum of a compensation value of the first pre-compensation and a previous first etching deviation of the initial fin structure is 0;
step S40: acquiring a first etching deviation of an initial fin structure, wherein the first etching deviation is the same as a compensation value of a second precompensation;
step S50: performing third compensation on the photoetching machine according to the first etching deviation;
step S60: performing fourth pre-compensation on the photoetching machine;
step S70: after third compensation and fourth pre-compensation are carried out on the photoetching machine, the initial fin structure is partially etched to form a fin structure, the sum of the compensation value of the fourth pre-compensation and the compensation value of the second pre-compensation is 0, and the sum of the compensation value of the fourth pre-compensation and the second etching deviation of the previous fin structure is 0;
step S80: and obtaining a second etching deviation of the fin structure, wherein the value of the second etching deviation is 0.
The compensation method of the overlay deviation carries out first pre-compensation and second pre-compensation on the photoetching machine before the initial fin structure is formed, wherein the sum of a compensation value of the first pre-compensation and the previous first etching deviation of the initial fin structure is 0, and a compensation value of the second pre-compensation is the same as the previous second etching deviation of the fin structure. Therefore, after the first etching deviation of the formed initial fin structure is identical to the second pre-compensated compensation value, and the first etching deviation is transferred to the fin structure layer, the sum of the fourth pre-compensated compensation value and the second pre-compensated compensation value is 0, so that the sum of the third compensated compensation value and the fourth pre-compensated compensation value is 0, the value of the second etching deviation of the fin structure obtained next is also 0, and when the subsequent gate structure is formed, compensation of the photoetching machine according to the second etching deviation of the fin structure is not needed. Therefore, the number of layers of the first etching deviation and the second etching deviation transmitted downwards is simplified, the compensation process is simplified, the compensation value is smaller, the photoetching machine is easy to debug and compensate, the situation that the compensation value is too large to easily occur is avoided, and the compensation efficiency is improved.
Next, each step will be described by analysis.
With continued reference to fig. 1, step S10 is performed: a wafer is provided.
The wafer is a mass-produced wafer in the semiconductor manufacturing process, and will not be described herein.
With continued reference to fig. 1, step S20 is performed: the first precompensation and the second precompensation are performed for the lithography machine.
Before the initial fin structure is formed, namely, the first pre-compensation and the second pre-compensation are carried out on the photoetching machine, the number of layers of the first etching deviation and the second etching deviation which are downwards transmitted can be simplified, the compensation process is simplified, and the situation that the compensation value is too large and the compensation is difficult to occur is avoided.
With continued reference to fig. 1, step S30 is performed: after the first pre-compensation and the second pre-compensation are carried out on the photoetching machine, an initial fin structure is formed on the wafer, and the sum of the compensation value of the first pre-compensation and the previous first etching deviation of the initial fin structure is 0.
The previous first etching deviation of the initial fin structure is an empirical result after multiple experimental measurements.
The method for acquiring the previous first etching deviation comprises the following steps: forming a first photoresist pattern on a wafer; after aligning the photoetching machine, measuring and obtaining position information and size information of the first photoresist pattern; forming an initial fin structure on the wafer by taking the first photoresist pattern as a mask; measuring and acquiring position information and size information of the initial fin structure; and acquiring a first difference value between the position information and the size information of the first photoresist pattern and the position information and the size information of the initial fin structure, wherein the first difference value is the previous first etching deviation.
The first photoresist pattern is a pattern after exposure and development.
With continued reference to fig. 1, step S40 is performed: and acquiring a first etching deviation of the initial fin structure, wherein the first etching deviation is the same as a compensation value of the second precompensation.
The method for obtaining the first etching deviation of the initial fin structure comprises the following steps: and obtaining the difference value of the position information and the size information between the photoresist pattern and the initial fin structure pattern, namely obtaining the first etching deviation of the initial fin structure. The process of obtaining the first etching deviation of the initial fin structure is the same as the process of obtaining the previous first etching deviation of the initial fin structure, and will not be described herein.
And the sum of the compensation value of the first precompensation and the previous first etching deviation of the initial fin structure is 0, so that when the first precompensation and the second precompensation are transmitted to the initial fin structure, the compensation value of the first precompensation is counteracted by the first etching deviation of the original initial fin structure, and at the moment, the first etching deviation of the initial fin structure is identical with the compensation value of the second precompensation.
With continued reference to fig. 1, step S50 is performed: and performing third compensation on the photoetching machine according to the first etching deviation.
The compensation value of the third compensation is the first etching deviation, i.e. the compensation value of the third compensation is the compensation value of the second pre-compensation.
With continued reference to fig. 1, step S60 is performed: and fourth pre-compensation is carried out on the photoetching machine.
With continued reference to fig. 1, step S70 is performed: and after the third compensation and the fourth pre-compensation are carried out on the photoetching machine, carrying out partial etching on the initial fin structure to form a fin structure, wherein the sum of the compensation value of the fourth pre-compensation and the compensation value of the second pre-compensation is 0, and the sum of the compensation value of the fourth pre-compensation and the previous second etching deviation of the fin structure is 0.
The previous second etching deviation of the fin structure is an empirical result after multiple experimental measurements.
The method for acquiring the previous second etching deviation comprises the following steps: forming a second photoresist pattern on the initial fin structure; after aligning the photoetching machine, acquiring position information and size information of a second photoresist pattern; etching the initial fin structure by taking the second photoresist pattern as a mask, and forming a fin structure on the wafer; measuring and acquiring position information and size information of the fin structure; and acquiring second difference values of the position information and the size information of the second photoresist pattern and the position information and the size information of the fin structure, wherein the second difference values are the previous second etching deviation.
The second photoresist pattern is a pattern after exposure and development.
The sum of the compensation value of the fourth pre-compensation and the compensation value of the second pre-compensation is 0, the sum of the compensation value of the fourth pre-compensation and the previous second etching deviation of the fin structure is 0, namely, the sum of the compensation value of the fourth pre-compensation and the compensation value of the third compensation is 0, so that the third compensation and the fourth pre-compensation cancel each other, namely, before the fin structure is formed, compensation of a photoetching machine is not needed, and the compensation process is simplified.
With continued reference to fig. 1, step S80 is performed: and obtaining a second etching deviation of the fin structure, wherein the value of the second etching deviation is 0.
The method for obtaining the second etching deviation of the fin structure comprises the following steps: and obtaining the difference value of the position information and the size information between the photoresist pattern and the fin structure pattern, namely obtaining the second etching deviation of the fin structure.
The process of obtaining the second etching deviation of the fin structure is the same as the process of obtaining the previous second etching deviation of the fin structure, and will not be described herein.
Since the lithography machine does not need to be compensated before the fin structure is formed, the etching deviation transferred to the fin structure is 0.
In this embodiment, after forming the fin structure, the method further includes: performing fifth compensation on the photoetching machine; and after fifth compensation is carried out on the photoetching machine, forming a grid structure on the fin structure, wherein the grid structure spans across the fin structure, and the sum of a compensation value of the fifth compensation and the previous third etching deviation of the grid structure is 0.
In this embodiment, the method for obtaining the previous third etching deviation includes: forming a third photoresist pattern on the fin structure; after aligning the photoetching machine, acquiring position information and size information of a third photoresist pattern; forming a grid structure on the fin part structure by taking the third photoresist pattern as a mask; measuring and acquiring position information and size information of the grid structure; and acquiring a third difference value between the position information and the size information of the third photoresist pattern and the position information and the size information of the gate structure, wherein the third difference value is the previous third etching deviation.
The previous third etching deviation of the grid structure is an empirical result after multiple experimental measurement.
The third photoresist pattern is a pattern after exposure and development.
The sum of the compensation value of the fifth compensation and the previous third etching deviation of the grid structure is 0, namely, before the grid structure is formed, only the fifth compensation is needed to be carried out on the photoetching machine, the compensation value of the fifth compensation is smaller, and the compensation process is simplified.
In this embodiment, further comprising: and obtaining a third etching deviation of the grid structure, wherein the value of the third etching deviation is 0.
The third etching deviation of the gate structure is the same as the previous third etching deviation of the gate structure, and will not be described herein.
And the sum of the compensation value of the fifth compensation and the previous third etching deviation of the grid structure is 0, so that the compensation value of the fifth compensation is counteracted by the original third etching deviation of the grid structure, and the third etching deviation of the grid structure is 0. The third etch bias of the gate structure need not be transferred down again.
In this embodiment, further comprising: forming a metal layer on the gate structure; the compensation value for compensating the lithography machine before forming the metal layer is 0.
The third etch bias of the gate structure is 0, so that the third etch bias does not need to be transferred to the process of forming the metal layer.
In this embodiment, further comprising: and obtaining a fourth etching deviation of the metal layer, wherein the value of the fourth etching deviation is 0.
Since compensation for the lithography machine is not required before forming the metal layer, the etching deviation transferred to the metal layer is 0.
The compensation process of the overlay deviation is simplified, so that the photoetching machine is easy to compensate, and the production efficiency is improved.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (10)
1. A method of compensating for overlay bias, comprising:
providing a wafer;
performing first precompensation and second precompensation on the photoetching machine;
after first pre-compensation and second pre-compensation are carried out on the photoetching machine, an initial fin structure is formed on the wafer, and the sum of a compensation value of the first pre-compensation and a previous first etching deviation of the initial fin structure is 0;
acquiring a first etching deviation of an initial fin structure, wherein the first etching deviation is the same as a compensation value of a second precompensation;
performing third compensation on the photoetching machine according to the first etching deviation;
performing fourth pre-compensation on the photoetching machine;
after third compensation and fourth pre-compensation are carried out on the photoetching machine, the initial fin structure is partially etched to form a fin structure, the sum of the compensation value of the fourth pre-compensation and the compensation value of the second pre-compensation is 0, and the compensation value of the second pre-compensation is the same as the previous second etching deviation of the fin structure;
and obtaining a second etching deviation of the fin structure, wherein the value of the second etching deviation is 0.
2. The method of claim 1, wherein the step of obtaining the previous first etch bias comprises: forming a first photoresist pattern on a wafer; after aligning the photoetching machine, measuring and obtaining position information and size information of the first photoresist pattern; forming an initial fin structure on the wafer by taking the first photoresist pattern as a mask; measuring and acquiring position information and size information of the initial fin structure; and acquiring a first difference value between the position information and the size information of the first photoresist pattern and the position information and the size information of the initial fin structure, wherein the first difference value is the previous first etching deviation.
3. The method of claim 1, wherein the step of obtaining the previous second etch bias comprises: forming a second photoresist pattern on the initial fin structure; after aligning the photoetching machine, acquiring position information and size information of a second photoresist pattern; etching the initial fin structure by taking the second photoresist pattern as a mask, and forming a fin structure on the wafer; measuring and acquiring position information and size information of the fin structure; and acquiring second difference values of the position information and the size information of the second photoresist pattern and the position information and the size information of the fin structure, wherein the second difference values are the previous second etching deviation.
4. The method of overlay bias compensation of claim 1, further comprising, after forming the fin structure: performing fifth compensation on the photoetching machine; and after fifth compensation is carried out on the photoetching machine, forming a grid structure on the fin structure, wherein the grid structure spans across the fin structure, and the sum of a compensation value of the fifth compensation and the previous third etching deviation of the grid structure is 0.
5. The method of claim 4, wherein the step of obtaining a third previous etch bias comprises: forming a third photoresist pattern on the fin structure; after aligning the photoetching machine, acquiring position information and size information of a third photoresist pattern; forming a grid structure on the fin part structure by taking the third photoresist pattern as a mask; measuring and acquiring position information and size information of the grid structure; and acquiring a third difference value between the position information and the size information of the third photoresist pattern and the position information and the size information of the gate structure, wherein the third difference value is the previous third etching deviation.
6. The method of overlay bias compensation of claim 4, further comprising: and obtaining a third etching deviation of the grid structure, wherein the value of the third etching deviation is 0.
7. The method of overlay bias compensation of claim 4, further comprising: forming a metal layer on the gate structure; the compensation value for compensating the lithography machine before forming the metal layer is 0.
8. The method of overlay bias compensation of claim 7, further comprising: and obtaining a fourth etching deviation of the metal layer, wherein the value of the fourth etching deviation is 0.
9. The method of claim 1, wherein the method of obtaining a first etch bias for an initial fin structure comprises: and obtaining the difference value of the position information and the size information between the photoresist pattern and the initial fin structure pattern, namely obtaining the first etching deviation of the initial fin structure.
10. The method of claim 1, wherein the method of obtaining a second etch bias for the fin structure comprises: and obtaining the difference value of the position information and the size information between the photoresist pattern and the fin structure pattern, namely obtaining the second etching deviation of the fin structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211153274.5A CN117784528A (en) | 2022-09-21 | 2022-09-21 | Overlay deviation compensation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211153274.5A CN117784528A (en) | 2022-09-21 | 2022-09-21 | Overlay deviation compensation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117784528A true CN117784528A (en) | 2024-03-29 |
Family
ID=90382250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211153274.5A Pending CN117784528A (en) | 2022-09-21 | 2022-09-21 | Overlay deviation compensation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117784528A (en) |
-
2022
- 2022-09-21 CN CN202211153274.5A patent/CN117784528A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110221515B (en) | Optical proximity correction method and manufacturing method of mask | |
| CN110119062B (en) | Optical proximity correction method, mask manufacturing method and patterning process | |
| CN113495425B (en) | Optical proximity correction method and device | |
| CN107490932B (en) | Method for correcting mask graph | |
| CN114326290A (en) | Optical proximity correction method | |
| US6420077B1 (en) | Contact hole model-based optical proximity correction method | |
| US7913196B2 (en) | Method of verifying a layout pattern | |
| CN116360203A (en) | Optical proximity correction method | |
| JPH097924A (en) | Equipment and method for manufacturing semiconductor device | |
| TWI421908B (en) | Method for constructing opc model | |
| CN110850677B (en) | Preparation method of photoetching layer mask plate and ion implantation method | |
| CN110221514B (en) | Optical proximity correction method and manufacturing method of mask | |
| CN113093469A (en) | Method for correcting target pattern, manufacturing mask and forming semiconductor structure | |
| US20230161267A1 (en) | Precision multi-axis photolithography alignment correction using stressor film | |
| CN117784528A (en) | Overlay deviation compensation method | |
| CN113835293B (en) | Optical proximity correction method and mask manufacturing method | |
| CN114063380A (en) | Pattern correction method and method for forming semiconductor structure | |
| CN112180690B (en) | Method for improving uniformity in critical dimension plane of device | |
| CN113495424B (en) | Optical proximity correction method and mask manufacturing method | |
| CN114706277A (en) | Overlay matching method | |
| CN116560192A (en) | Optical proximity correction method | |
| KR100801737B1 (en) | Method for processing a optical proximity correction of semiconductor device's pattern | |
| JP4691840B2 (en) | Mask pattern generation method and photomask | |
| TWI518444B (en) | Method of forming assist feature patterns | |
| CN113109991A (en) | Target layout correction method and mask layout forming method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |