CN117761971A - Method and device for determining pre-compensation amount of overlay error and storage medium - Google Patents
Method and device for determining pre-compensation amount of overlay error and storage medium Download PDFInfo
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- CN117761971A CN117761971A CN202211129765.6A CN202211129765A CN117761971A CN 117761971 A CN117761971 A CN 117761971A CN 202211129765 A CN202211129765 A CN 202211129765A CN 117761971 A CN117761971 A CN 117761971A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Abstract
The present disclosure provides a method, apparatus and storage medium for determining a pre-compensation amount of overlay error. The determining method comprises the following steps: in the wafer manufacturing process, when the first preset condition is switched to the second preset condition, determining the height difference of corresponding points in the first level measurement chart and the second level measurement chart; determining a reference point in the first leveling map according to the height difference; determining a reference angle according to the reference point; determining initial reference amounts of all points in the first leveling map according to the reference angle; and determining the pre-compensation amount of the overlay error according to the initial reference amount of the point position. The compensation quantity of the deviation between the overlay errors after the preset condition is switched is determined efficiently, so that the defect that the overlay markers are required to be measured intensively for calculation in the related art is avoided, and the problem of uncertainty of different judgment caused by manual measurement is also avoided.
Description
Technical Field
The disclosure relates to the field of semiconductor technology, and in particular, to a method and device for determining a precompensation amount of an overlay error, and a storage medium.
Background
In the related art, in a wafer process, a wafer is placed on a wafer table (wafer table) for exposure. As the process progresses, the wafer table becomes defective, for example, the surface of the wafer table wears and is recessed, and the wafer table needs to be replaced. In the case where the wafer table before replacement has a recess, the wafer on the wafer table is also recessed at the corresponding position. After the wafer is replaced to a new wafer stage after replacement, the surface of the new wafer stage is flat, and the height of the surface of the wafer at other positions corresponding to the concave positions on the new wafer stage is raised, or in different batches, at the same position, may be different. If processing is continued based on the overlay error of the wafer table before replacement, the yield of the product is greatly reduced. In order to overcome this drawback, after the wafer is replaced to a new wafer stage, after the wafer is exposed, a compensation value is calculated by using a dense Overlay mark (OVL mark) to compensate for the difference between Overlay errors before and after the wafer stage is replaced.
Disclosure of Invention
The following is a summary of the subject matter of the detailed description of the present disclosure. This summary is not intended to limit the scope of the claims.
The disclosure provides a method, a device and a storage medium for determining an address mapping relation.
According to a first aspect of the present disclosure, there is provided a method of determining a pre-compensation amount of an overlay error, the method comprising:
in the wafer manufacturing process, when a first preset condition is switched to a second preset condition, determining the height difference of corresponding points in a first leveling chart and a second leveling chart, wherein the first leveling chart is a leveling chart of a wafer obtained under the second preset condition, and the second leveling chart is a leveling chart obtained under the first preset condition; the point position corresponds to a position forming a height difference in a preset layer of the wafer under the second preset condition relative to a preset layer of the wafer under the first preset condition;
determining a reference point in the first leveling map according to the height difference;
determining a reference angle according to the reference point;
determining initial reference amounts of all points in the first leveling map according to the reference angle;
and determining the pre-compensation amount of the overlay error according to the initial reference amount of the point position.
In some exemplary embodiments, determining the reference angle from the reference point location includes:
forming a first cone model extending to a reference surface of the wafer according to a preset rule on the basis of the vertex of the reference point;
determining a first radius of a bottom surface of the intersection of the first cone model and the reference surface of the wafer;
and determining the reference angle according to the height of the first cone model and the first radius of the bottom surface.
In some exemplary embodiments, based on the vertex of the reference point being a vertex, a first cone model is formed according to a preset rule, including any one of the following modes:
forming the first cone model by taking the vertex of the reference point as the vertex and cutting the bottom surface of the first cone model into the reference surface of the wafer;
forming the first cone model by taking the vertex of the reference point as the vertex and in a mode that the bottom surface of the first cone model is circumscribed on the reference surface of the wafer;
and forming the first cone model by taking the vertex of the reference point as the vertex and adopting the mode that the ratio of the area of the bottom surface of the first cone model to the area of the reference surface of the wafer meets the preset proportion range.
In some exemplary embodiments, determining an initial reference for all points in the first leveling map based on the reference angle includes:
forming a second cone model formed by taking corresponding vertexes as vertexes and facing a reference surface of the wafer according to the reference angle;
according to a second radius of the bottom surface of the second cone model intersecting the reference surface of the wafer;
and determining the initial reference quantity according to the second radius.
In some exemplary embodiments, determining the initial reference amount from the second radius includes:
determining a quadrant in which a corresponding point is located according to a preset coordinate system in which the wafer is located;
and equally dividing the second radius into an initial reference quantity of an X axis and an initial reference quantity of a Y axis according to the quadrants and the preset coordinate system.
In some exemplary embodiments, determining the pre-compensation amount of the overlay error from the initial reference amount of the spot location includes:
and determining the pre-compensation amount of the overlay error according to the initial reference amount of the X axis and the initial reference amount of the Y axis of all the points in the first leveling map.
In some exemplary embodiments, determining the pre-compensation amount of overlay error based on the initial reference amount of the X-axis and the initial reference amount of the Y-axis for all points in the first leveling map includes:
determining a weight value based on the compensation amount of the preset layer;
determining the pre-compensation quantity of the X axis of the overlay error under the preset coordinate system according to the vector values of the initial reference quantity of the X axes of all the points in the first leveling map and the weight values;
and determining the pre-compensation quantity of the Y-axis of the overlay error under the preset coordinate system according to the vector values of the initial reference quantity of the Y-axis of all the points in the first leveling map and the weight values.
In some exemplary embodiments, determining the pre-compensation amount of the overlay error in the preset coordinate system according to the vector value and the weight value of the initial reference amount of the X-axis of all points in the first leveling map, and determining the pre-compensation amount of the overlay error in the preset coordinate system according to the vector value and the weight value of the initial reference amount of the Y-axis of all points in the first leveling map includes:
Taking the product of the sum of vector values of initial reference amounts of X-axis of all points in the first leveling chart and the weight as the pre-compensation amount of the X-axis of the overlay error under the preset coordinate system;
and taking the product of the sum of vector values of initial reference quantities of Y-axes of all points in the first leveling map and the weight as the pre-compensation quantity of the Y-axis of the overlay error under the preset coordinate system.
In some exemplary embodiments, the determining method further comprises:
and determining the weight according to preset parameters of the preset layer of the wafer.
In some exemplary embodiments, the preset parameters include one or more of the following:
the method comprises the steps of selecting the type of the overlay mark of the preset layer, the size of the key size in the overlay mark of the preset layer, the size of the distance between the overlay marks of the preset layer, the thickness of the mask of the preset layer and the selection mode of the reference point.
In some exemplary embodiments, determining the reference point in the first leveling map from the height difference includes any one of:
Determining a point with the largest height difference as the reference point in the first leveling map;
determining a point with the smallest height difference as the reference point in the first leveling map; or alternatively
And determining the point position of the height difference closest to the average value of the height differences of all the point positions as the reference point in the first leveling map.
In some exemplary embodiments, the first preset condition switches to a second preset condition, comprising:
switching from a previous wafer stage to a current wafer stage; and/or
And switching from the wafer in the previous batch to the wafer in the current batch.
According to a second aspect of the present disclosure, there is provided a determination device of a pre-compensation amount of an overlay error, the determination device including:
the height difference determining module is configured to determine the height difference of corresponding points in a first leveling chart and a second leveling chart when a first preset condition is switched to a second preset condition in the wafer manufacturing process, wherein the first leveling chart is a leveling chart of the wafer obtained under the second preset condition, and the second leveling chart is a leveling chart obtained under the first preset condition; the point position corresponds to a position forming a height difference in a preset layer of the wafer under the second preset condition relative to a preset layer of the wafer under the first preset condition;
A reference point determination module configured to determine a reference point in the first leveling map according to the height difference;
a reference angle determination module configured to determine a reference angle from the reference point location;
the initial reference quantity determining module is configured to determine initial reference quantities of all points in the first leveling map according to the reference angle;
a pre-compensation amount determination module configured to determine a pre-compensation amount of the overlay error based on the initial reference amount of the spot location.
In some exemplary embodiments, the reference angle determination module is configured to:
forming a first cone model extending to a reference surface of the wafer according to a preset rule on the basis of the vertex of the reference point;
determining a first radius of a bottom surface of the intersection of the first cone model and the reference surface of the wafer;
and determining the reference angle according to the height of the first cone model and the first radius of the bottom surface.
In some exemplary embodiments, the reference angle determination module is configured to form the first cone model in any one of the following ways:
forming the first cone model by taking the vertex of the reference point as the vertex and cutting the bottom surface of the first cone model into the reference surface of the wafer;
Forming the first cone model by taking the vertex of the reference point as the vertex and in a mode that the bottom surface of the first cone model is circumscribed on the reference surface of the wafer;
and forming the first cone model by taking the vertex of the reference point as the vertex and adopting the mode that the ratio of the area of the bottom surface of the first cone model to the area of the reference surface of the wafer meets the preset proportion range.
In some exemplary embodiments, the initial reference quantity determination module is configured to:
forming a second cone model formed by taking corresponding vertexes as vertexes and facing a reference surface of the wafer according to the reference angle;
according to a second radius of the bottom surface of the second cone model intersecting the reference surface of the wafer;
and determining the initial reference quantity according to the second radius.
In some exemplary embodiments, the initial reference quantity determination module is configured to:
determining a quadrant in which a corresponding point is located according to a preset coordinate system in which the wafer is located;
and equally dividing the second radius into an initial reference quantity of an X axis and an initial reference quantity of a Y axis according to the quadrants and the preset coordinate system.
In some exemplary embodiments, the pre-compensation amount determination module is configured to:
and determining the pre-compensation amount of the overlay error according to the initial reference amount of the X axis and the initial reference amount of the Y axis of all the points in the first leveling map.
In some exemplary embodiments, the pre-compensation amount determination module is configured to:
determining a weight value based on the compensation amount of the preset layer;
determining the pre-compensation quantity of the X axis of the overlay error under the preset coordinate system according to the vector values of the initial reference quantity of the X axes of all the points in the first leveling map and the weight values;
and determining the pre-compensation quantity of the Y-axis of the overlay error under the preset coordinate system according to the vector values of the initial reference quantity of the Y-axis of all the points in the first leveling map and the weight values.
In some exemplary embodiments, the pre-compensation amount determination module is configured to:
taking the product of the sum of vector values of initial reference amounts of X-axis of all points in the first leveling chart and the weight as the pre-compensation amount of the X-axis of the overlay error under the preset coordinate system;
and taking the product of the sum of vector values of initial reference quantities of Y-axes of all points in the first leveling map and the weight as the pre-compensation quantity of the Y-axis of the overlay error under the preset coordinate system.
In some exemplary embodiments, the determining method further comprises:
and the weight determining module is configured to determine the weight according to preset parameters of the preset layer of the wafer.
In some exemplary embodiments, the preset parameters include one or more of the following:
the method comprises the steps of selecting the type of the overlay mark of the preset layer, the size of the key size in the overlay mark of the preset layer, the size of the distance between the overlay marks of the preset layer, the thickness of the mask of the preset layer and the selection mode of the reference point.
In some exemplary embodiments, the reference point determination module is configured to determine the reference point in any one of the following ways:
determining a point with the largest height difference as the reference point in the first leveling map;
determining a point with the smallest height difference as the reference point in the first leveling map; or alternatively
And determining the point position of the height difference closest to the average value of the height differences of all the point positions as the reference point in the first leveling map.
In some exemplary embodiments, the first preset condition switches to a second preset condition, comprising:
Switching from a previous wafer stage to a current wafer stage; and/or
And switching from the wafer in the previous batch to the wafer in the current batch.
According to a third aspect of the present disclosure, there is provided a device for determining a pre-compensation amount of an overlay error, including:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to perform the methods provided by the exemplary embodiments of the present disclosure.
According to a fourth aspect of the present disclosure, there is provided a non-transitory computer readable storage medium, which when executed by a processor of a determining apparatus, enables the determining apparatus to perform the method provided by the exemplary embodiments of the present disclosure.
The method for determining the pre-compensation amount of the overlay error provided by the exemplary embodiment of the disclosure can efficiently determine the compensation amount of the deviation between the overlay errors after the preset condition is switched, avoid the defect that the overlay markers are required to be measured intensively for calculation in the related art, and avoid the problem of uncertainty of different judgment caused by manual measurement.
Other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description, serve to explain the principles of the embodiments of the disclosure. In the drawings, like reference numerals are used to identify like elements. The drawings, which are included in the description, are some, but not all embodiments of the disclosure. Other figures can be obtained from these figures without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart illustrating a method of determining a pre-compensation amount of overlay error, according to an example embodiment;
fig. 2 exemplarily shows a flowchart of a method for determining a reference angle from a reference point in step S103;
FIG. 3 is a schematic diagram of a first cone model shown according to an exemplary embodiment;
FIG. 4 is a schematic illustration of a high Z determination reference angle α according to a first radius R of a base surface of a first cone model and the first cone model, according to an exemplary embodiment;
FIG. 5 is a flow chart illustrating a method of determining initial reference amounts for all points in the first leveling map based on the reference angles in step S104;
FIG. 6 exemplarily shows a flowchart of a method for determining an initial reference amount according to a second radius in step S1043;
FIG. 7 is a flow chart illustrating a method of determining a pre-compensation amount for overlay error based on an initial reference amount for an X-axis and an initial reference amount for a Y-axis for all points in a first leveling map;
fig. 8 is a schematic diagram showing a configuration of a determination device of a pre-compensation amount of an overlay error according to an exemplary embodiment;
fig. 9 is a diagram illustrating a determination apparatus for providing a pre-compensation amount of overlay error according to an exemplary embodiment.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are some embodiments of the present disclosure, but not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person skilled in the art would obtain without making any inventive effort are within the scope of protection of this disclosure. It should be noted that, without conflict, the embodiments of the present disclosure and features of the embodiments may be arbitrarily combined with each other.
The present disclosure provides a method for determining a pre-compensation amount of an overlay error, as shown in fig. 1, and fig. 1 is a flowchart illustrating a method for determining a pre-compensation amount of an overlay error according to an exemplary embodiment.
Step S101, in the wafer process, when the first preset condition is switched to the second preset condition, determining the height difference of the corresponding point in the first leveling map and the second leveling map, wherein the first leveling map is the leveling map of the wafer obtained under the second preset condition, and the second leveling map is the leveling map obtained under the first preset condition; the point position corresponds to a position forming a height difference in the preset layer of the wafer under the second preset condition relative to the preset layer of the wafer under the first preset condition;
step S102, determining a reference point in a first level measurement graph according to the height difference;
step S103, determining a reference angle according to the reference point position;
step S104, determining initial reference amounts of all points in the first level measurement graph according to the reference angles;
step S105, determining the pre-compensation amount of the overlay error according to the initial reference amount of the point location.
In an exemplary embodiment of the present disclosure, in order to improve the efficiency of determining the difference in the overlay error between preset layers of a wafer after a change due to a change in process conditions in a wafer process, a method for determining the pre-compensation amount of the overlay error is provided.
In the wafer process, a leveling map (leveling map) of the wafer is drawn under different preset conditions. The leveling map is used for representing a three-dimensional perspective view of the surface height of the wafer, and the heights of different points can be visually represented. In the wafer process, when the first preset condition is switched to the second preset condition, due to the conversion of the preset conditions, positions with different heights appear on the preset layers of the wafer under the two preset conditions, and the positions with different heights can be called as points, namely, the points correspond to positions with different heights in the preset layers of the wafer under the second preset condition relative to the preset layers of the wafer under the first preset condition, and the difference between the overlay errors of the first preset condition and the second preset condition is caused by the difference between the heights of the points.
In order to determine the compensation amount of the difference between the overlay errors after the first preset condition is switched to the second preset condition, the height difference between the leveling map of the wafer obtained under the second preset condition and the corresponding point in the leveling map of the wafer obtained under the first preset condition can be determined, and the reference point in the first leveling map is determined according to the height difference. The reference point is a point of the reference angle used to determine an initial reference for all points in the first leveling map. The reference point location may be determined according to any rule.
After the reference point is determined, a reference angle can be determined according to the reference point, where the reference angle is used to determine angles of initial references of all points in the first leveling map, that is, the same reference angle is used to determine initial references corresponding to each point in the first alignment map. And determining the preset compensation amount of the overlay error after the first preset condition is switched to the second preset condition according to the initial reference amount corresponding to all the points in the first alignment measurement chart.
In an exemplary embodiment of the disclosure, in a wafer process, a difference of alignment errors corresponding to a preset layer of a wafer is caused due to switching of preset conditions, in order to improve determination efficiency of determining the difference, a method for determining a pre-compensation amount of the alignment errors is provided, a reference point is determined by a correspondingly positioned height difference in a first leveling map and a second leveling map, a reference angle is determined according to the reference point, and the reference angle is used for determining an initial reference amount of each point in the first leveling map so as to determine a compensation amount of the alignment errors of the preset layer of the wafer after switching of the preset conditions. The method for determining the pre-compensation amount of the overlay error provided by the exemplary embodiment of the disclosure can efficiently determine the compensation amount of the deviation between the overlay errors after the preset condition is switched, avoid the defect that the overlay markers are required to be measured intensively for calculation in the related art, and avoid the problem of uncertainty of different judgment caused by manual measurement.
The overlay error is a deviation of an alignment position between each of the photolithography layers and a previous photolithography layer in an exposure process of a wafer process, and thus, the method of determining the pre-compensation amount of the overlay error provided in the exemplary embodiment of the present disclosure is to determine the pre-compensation amount of the corresponding overlay error for each of the photolithography layers in the exposure process of the wafer.
In an exemplary embodiment of the present disclosure, the preset condition is a condition that when the preset condition is switched, a deviation of the overlay error before and after the switching is generated, the first preset condition may be a situation that when any one of the preset conditions is switched, a deviation of the overlay error before and after the switching is generated, for example, the first preset condition may be switched to the second preset condition including:
switching from a previous wafer stage to a current wafer stage; and/or
And switching from the wafer in the previous batch to the wafer in the current batch.
In the wafer process, the surface states of the previous wafer table and the current wafer table are different, and the difference exists between the overlay errors of the corresponding preset layers, namely the preset photoetching layers, of the wafer when the wafer is on the different wafer tables due to the switching of the wafer tables, so that the overlay errors need to be compensated. In the wafer process, the surface heights of different wafers may be different at the same position in different batches, so that the overlay errors of the preset photolithography layers may also be different, and compensation is required.
In consideration of the difference of overlay errors before and after replacement of a wafer workbench or the difference of height differences of surfaces of corresponding wafers in different batches in a wafer process, the present disclosure provides a method for determining the pre-compensation amount of the overlay errors, which avoids the problems of the prior art that compensation calculation is performed on the overlay markers for dense measurement after wafer exposure, and the problems of uncertainty caused by different judgment caused by manual measurement.
In exemplary embodiments of the present disclosure, the reference point may be determined according to any rule. The reference point may be determined, for example, in any of the following ways:
determining the point with the largest height difference as a reference point in the first leveling map;
determining the point with the smallest height difference as a reference point in the first leveling map; or alternatively
And determining the point position of the average value of the height differences of which the height differences are closest to the point position as a reference point in the first leveling map.
The reference points are used for determining the reference angles, so that the selected reference points are different, and the determined reference angles are different, so that the corresponding reference points can be determined as required.
After the reference point is determined, the reference angle may be determined according to the reference point, as shown in fig. 2, fig. 2 exemplarily shows a flowchart of a method for determining the reference angle according to the reference point in step S103:
step S1031, forming a first cone model extending to a reference surface of the wafer according to a preset rule based on the vertex of the reference point;
step S1032, determining a first radius of the intersecting bottom surface of the first cone model and the reference surface of the wafer;
and step S1033, determining the reference angle according to the first radius of the high and bottom surfaces of the first cone model.
In an exemplary embodiment of the present disclosure, in order to determine the reference angle, a first cone model extending toward the reference surface of the wafer may be formed according to a preset rule based on the vertex of the reference point. The reference plane of the wafer may include the plane in which the top surface of the wafer would lie under normal conditions. The first cone model extends to the reference surface of the wafer, and the bottom surface and the reference surface are completely overlapped. The first radius of the bottom surface can be determined through the formed first cone model, and then the reference angle can be determined according to the height of the reference point.
The preset rule may be any rule that may form the first cone model. For example, one of any of the following:
Forming a first cone model by taking the vertex of the reference point as the vertex and cutting the bottom surface of the first cone model into the reference surface of the wafer;
forming a first cone model by taking the vertex of the reference point as the vertex and in a mode that the bottom surface of the first cone model is circumscribed on the reference surface of the wafer;
and forming the first cone model by taking the vertex of the reference point as the vertex and the mode that the ratio of the area of the bottom surface of the first cone model to the area of the reference surface of the wafer meets the preset proportion range.
The forming mode of the first cone model can be arbitrarily combined with the selection of the reference point according to the needs, for example, the point with the largest height difference can be selected as the reference point, meanwhile, the vertex of the reference point is taken as the vertex, and the bottom surface of the first cone model is inscribed on the reference surface of the wafer to form the first cone model; the point with the smallest height difference can be selected as a reference point, and the vertex of the reference point is taken as a vertex at the same time, so that the ratio of the area of the bottom surface of the first cone model to the area of the reference surface of the wafer meets the preset proportion range, and the first cone model is formed. In practical applications, it can be determined according to the need.
In an exemplary embodiment of the present disclosure, a point with the largest height difference is taken as a reference point, and a vertex of the reference point is taken as a vertex, and a first cone model is formed by inscribing a bottom surface of the first cone model on a reference surface of a wafer, as shown in fig. 3, and fig. 3 is a schematic diagram of the first cone model according to an exemplary embodiment. The point 310 with the largest height difference is taken as a reference point, the vertex of the point is taken as a vertex, the point extends to the reference surface 210 of the wafer 200, and the bottom surface 311 of the first cone model is inscribed on the reference surface 210 and is completely overlapped with the reference surface 210 of the wafer, so that the first cone model 300 is formed. From the first cone model, a first radius R of the base 311 of the first cone model may be determined.
The high Z of the first cone model, i.e., the height of the vertex of the reference point to the reference surface of the wafer, i.e., the difference in height of the vertex of the reference point relative to the upper surface of the wafer. The reference angle may be determined based on the height of the first cone model and the first radius of the base surface. As shown in fig. 4, fig. 4 is a schematic view illustrating a reference angle α determined according to a first radius R of a bottom surface of a first cone model and a high Z of the first cone model according to an exemplary embodiment. As can be seen from fig. 3, after the bottom surface 311 of the first cone model is determined by extending toward the reference surface 210 of the wafer 200 with the vertex of the point 310 having the largest height difference as the vertex, the first radius R of the bottom surface 311 can be determined. According to the high Z and the first radius R of the first cone model, the reference angle alpha can be determined, namely, the triangle S is formed by taking the high Z and the first radius R of the first cone model as right-angle sides, and the included angle between the high Z of the first cone model and the hypotenuse of the triangle is the reference angle alpha. The reference angle α may be obtained based on the following formula:
After the reference angle is determined, the initial reference quantity of all the points in the first leveling chart can be determined according to the reference angle, namely, the vertex of each point in the first leveling chart is taken as the vertex, the reference angle alpha is taken as the corresponding included angle, a second cone model corresponding to each point is formed, the first radius of the bottom surface where the second cone model intersects with the reference surface of the wafer is determined according to the determined second cone model, and the initial reference quantity is determined according to the determined radius. As shown in fig. 5, fig. 5 exemplarily shows a flowchart of a method for determining initial reference amounts of all points in the first leveling map according to the reference angle in step S104:
step S1041, forming a second cone model formed by using the corresponding vertexes as vertexes and facing the reference surface of the wafer according to the reference angles,
step S1042, according to the second radius of the bottom surface of the second cone model intersecting the reference surface of the wafer;
in step S1043, an initial reference amount is determined according to the second radius.
After the reference angle is determined, a second cone model corresponding to each point in the first leveling map is determined according to the reference angle, a second radius is determined according to the second cone model, and an initial reference quantity is determined according to the second radius. In an exemplary embodiment of the present disclosure, a reference angle determined according to a reference point is used as an angle of forming a cone model for each point in a first leveling map, and an initial reference amount of each point is determined based on a radius of a bottom surface determined by the formed cone model, that is, the initial reference amount of each point is determined by the same standard, so that accuracy of determining a precompensation amount of an overlay error is improved.
In an exemplary embodiment of the present disclosure, a method of determining an initial reference amount based on a second radius is also provided. As shown in fig. 6, fig. 6 exemplarily shows a flowchart of a method for determining an initial reference amount according to a second radius in step S1043:
step S10431, determining a quadrant in which the corresponding point is located according to a preset coordinate system in which the wafer is located;
in step S10432, the second radius is equally divided into an initial reference amount of the X-axis and an initial reference amount of the Y-axis according to the quadrant and the preset coordinate system.
In an exemplary embodiment of the present disclosure, a quadrant in which each point in the first leveling map is located may be determined according to a preset coordinate system in which the wafer is located, and the second radius is equally decomposed into an initial reference amount of the X axis and an initial reference amount of the Y axis according to the quadrant in which each point is located and the preset coordinate system.
As shown in fig. 3, a preset coordinate system is centered on the origin of the wafer to form an X-axis and a Y-axis, dividing the wafer into four quadrants, a, B, C, and D. The reference point 310 is located in the second quadrant B, and the initial reference quantity Rx of the X axis and the initial reference quantity Ry of the Y axis are respectively decomposed in equal quantity to the X axis and the Y axis by using the center of the circle where the bottom surface is located as the origin. By this, an initial reference of the X-axis and an initial reference of the Y-axis of each point in the first leveling map are obtained.
In an exemplary embodiment of the present disclosure, determining the pre-compensation amount of the overlay error according to the initial reference amount of the spot location may include:
and determining the pre-compensation amount of the overlay error according to the initial reference amount of the X axis and the initial reference amount of the Y axis of all the points in the first leveling map.
After determining the initial reference amount of the X axis and the initial reference amount of the Y axis of each point in the first leveling map, the pre-compensation amount of the overlay error may be determined according to the initial reference amount of the X axis and the initial reference amount of the Y axis of each point in the first leveling map.
In an exemplary embodiment of the present disclosure, as shown in fig. 7, fig. 7 illustrates a flowchart of a method for determining a pre-compensation amount of overlay error according to an initial reference amount of X-axis and an initial reference amount of Y-axis of all points in a first leveling map:
step S701, determining a weight value based on the compensation amount of the preset layer;
step S702, determining the pre-compensation amount of the X-axis of the overlay error under a preset coordinate system according to the vector values and the weight values of the initial reference amounts of the X-axes of all the points in the first leveling map;
in step S703, the pre-compensation amount of the overlay error in the Y-axis under the preset coordinate system is determined according to the vector values and the weight values of the initial reference amounts of the Y-axes of all the points in the first leveling map.
The method for determining the pre-compensation amount of the overlay error provided in the exemplary embodiment of the present disclosure is based on the weight value and the characteristic of the overlay pattern of each lithography layer in the exposure process of the wafer, and each lithography layer has its own characteristic, so when determining the pre-compensation amount of the overlay error of the corresponding lithography layer, the vector value of the initial reference amount of the X-axis of all points in the leveling map can be considered, the pre-compensation amount of the X-axis of the overlay error in the preset coordinate system is determined, and the pre-compensation amount of the Y-axis of the overlay error in the preset coordinate system is determined based on the weight value and the vector value of the initial reference amount of the Y-axis of all points in the first leveling map.
In an exemplary embodiment of the present disclosure, a product of a sum of vector values of initial reference amounts and weights of X-axes of all points in the first leveling map may be used as a pre-compensation amount of the overlay error for the X-axis in a preset coordinate system; and taking the product of the sum of vector values of initial reference quantities of the Y-axis of all points in the first leveling chart and the weight as the pre-compensation quantity of the Y-axis of the overlay error under a preset coordinate system.
Referring to fig. 3, the wafer is divided into four quadrants, a, B, C, and D, based on a predetermined coordinate system. If the point position is located in the first quadrant A, the vector value of the initial reference quantity of the X axis and the vector value of the initial reference quantity of the Y axis are positive values; if the point position is located in the second quadrant B, the vector value of the initial reference quantity of the X axis is a positive value, and the vector value of the initial reference quantity of the Y axis is a negative value; if the point position is located in the third quadrant C, the vector value of the initial reference quantity of the X axis and the vector value of the initial reference quantity of the Y axis are negative values; if the point position is in the fourth quadrant D, the vector value of the initial reference quantity of the X axis is a negative value, and the vector value of the initial reference quantity of the Y axis is a positive value. For example, the reference point 310 is located in the second quadrant B, the X-axis is positive, the Y-axis is negative, the vector value of the initial reference Rx of the X-axis of the reference point 310 is positive 100, and the vector value of the initial reference Ry of the Y-axis is negative-100. And by the pushing, determining vector values of initial reference quantities of X-axis of all points in the first leveling map, and taking the product of the vector values of the initial reference quantities of X-axis of all points and the weights as the pre-compensation quantity of the X-axis of the wafer alignment error on the preset layer under the preset coordinate system. Similarly, vector values of initial reference amounts of Y-axis of all points in the first leveling map are determined, and products of the vector values of the initial reference amounts of Y-axis of all points and weights are used as pre-compensation amounts of alignment errors on a preset layer of the wafer in a preset coordinate system.
In an exemplary embodiment of the present disclosure, determining the weight according to a preset parameter of a preset layer of the wafer is further included.
The method for determining the pre-compensation amount of the overlay error provided in the exemplary embodiment of the present disclosure is specific to each lithography layer in the exposure process of the wafer, and each lithography layer has its own characteristics of the overlay mark based on the characteristics of its lithography pattern, so when determining the pre-compensation amount of the overlay error of the corresponding lithography layer, the corresponding weight is determined in consideration of the characteristics of the preset layer, that is, the preset parameters of the preset layer.
The preset parameters may include one or more of the following:
the type of the overlay mark of the preset layer, the size of the critical dimension (Critical Dimension, CD) in the overlay mark of the preset layer, the size of the distance between the overlay marks of the preset layer, the thickness of the mask of the preset layer and the selection mode of the reference point.
In the process of preparing the wafer, the photoetching patterns and the overlay markers of each photoetching layer on the wafer have the characteristics of the photoetching patterns and the overlay markers, and different influences are generated on the overlay errors when preset conditions are switched, so that when the pre-compensation amount of the overlay errors of the corresponding photoetching layers is determined, the corresponding weights can be considered according to the characteristics of the photoetching layers, namely, the weights of the pre-compensation amount for determining the overlay errors of the photoetching layers are determined according to preset parameters of the preset layers. The preset parameters may include overlay mark related parameters of the preset layer and mask related parameters of the preset layer. In the exemplary embodiment of the present disclosure, the reference point may be determined according to different manners, and the selection of the reference point has different effects on the determination of the pre-compensation amount of the overlay error, so the manner of selecting the reference point may also be considered when determining the weight of the preset layer.
The weight of the preset layer may be a fixed value determined with reference to historical data of preset parameters of the preset layer; or a fixed value determined according to the change state of the history data of the preset parameters of the preset layer; the fixed value may be determined by referring to the history data of the weight of the preset layer, or may be determined by the change state of the history data of the weight of the preset layer.
In the exemplary embodiment of the disclosure, in consideration of different selection modes of the lithography pattern, the overlay marker, the mask and the reference point of each lithography layer, when determining the pre-compensation amount of the overlay error, the corresponding weight is set, so that the accuracy of determining the pre-compensation amount of the overlay error is improved.
In an exemplary embodiment of the present disclosure, a determination device for a pre-compensation amount of an overlay error is provided, and fig. 8 is a schematic structural diagram of the determination device for a pre-compensation amount of an overlay error according to an exemplary embodiment. The determining device includes:
the level difference determining module 801 is configured to determine, in a wafer process, a level difference of a corresponding point in a first level measurement map and a second level measurement map when a first preset condition is switched to a second preset condition, where the first level measurement map is a level measurement map of the wafer obtained under the second preset condition, and the second level measurement map is a level measurement map obtained under the first preset condition; the point position corresponds to a position forming a height difference in a preset layer of the wafer under the second preset condition relative to a preset layer of the wafer under the first preset condition;
A reference point determination module 802 configured to determine a reference point in the first leveling map according to the height difference;
a reference angle determination module 803 configured to determine a reference angle from the reference point location;
an initial reference quantity determining module 804 configured to determine initial reference quantities of all points in the first leveling map according to the reference angle;
a pre-compensation amount determination module 805 configured to determine a pre-compensation amount of the overlay error based on the initial reference amount of the spot location.
In some exemplary embodiments, the reference angle determination module 803 is configured to:
forming a first cone model extending to a reference surface of the wafer according to a preset rule on the basis of the vertex of the reference point;
determining a first radius of a bottom surface of the intersection of the first cone model and the reference surface of the wafer;
and determining the reference angle according to the height of the first cone model and the first radius of the bottom surface.
In some exemplary embodiments, the reference angle determination module 803 is configured to form the first cone model in any one of the following ways:
Forming the first cone model by taking the vertex of the reference point as the vertex and cutting the bottom surface of the first cone model into the reference surface of the wafer;
forming the first cone model by taking the vertex of the reference point as the vertex and in a mode that the bottom surface of the first cone model is circumscribed on the reference surface of the wafer;
and forming the first cone model by taking the vertex of the reference point as the vertex and adopting the mode that the ratio of the area of the bottom surface of the first cone model to the area of the reference surface of the wafer meets the preset proportion range.
In some exemplary embodiments, the initial reference quantity determination module 804 is configured to:
forming a second cone model formed by taking corresponding vertexes as vertexes and facing a reference surface of the wafer according to the reference angle;
according to a second radius of the bottom surface of the second cone model intersecting the reference surface of the wafer;
and determining the initial reference quantity according to the second radius.
In some exemplary embodiments, the initial reference quantity determination module 804 is configured to:
determining a quadrant in which a corresponding point is located according to a preset coordinate system in which the wafer is located;
And equally dividing the second radius into an initial reference quantity of an X axis and an initial reference quantity of a Y axis according to the quadrants and the preset coordinate system.
In some exemplary embodiments, the pre-compensation amount determination module 805 is configured to:
and determining the pre-compensation amount of the overlay error according to the initial reference amount of the X axis and the initial reference amount of the Y axis of all the points in the first leveling map.
In some exemplary embodiments, the pre-compensation amount determination module 805 is configured to:
determining a weight value based on the compensation amount of the preset layer;
determining the pre-compensation quantity of the X axis of the overlay error under the preset coordinate system according to the vector values of the initial reference quantity of the X axes of all the points in the first leveling map and the weight values;
and determining the pre-compensation quantity of the Y-axis of the overlay error under the preset coordinate system according to the vector values of the initial reference quantity of the Y-axis of all the points in the first leveling map and the weight values.
In some exemplary embodiments, the pre-compensation amount determination module 805 is configured to:
taking the product of the sum of vector values of initial reference amounts of X-axis of all points in the first leveling chart and the weight as the pre-compensation amount of the X-axis of the overlay error under the preset coordinate system;
And taking the product of the sum of vector values of initial reference quantities of Y-axes of all points in the first leveling map and the weight as the pre-compensation quantity of the Y-axis of the overlay error under the preset coordinate system.
In some exemplary embodiments, the determining method further comprises:
a weight determining module 806 is configured to determine the weight according to a preset parameter of the preset layer of the wafer.
In some exemplary embodiments, the preset parameters include one or more of the following:
the method comprises the steps of selecting the type of the overlay mark of the preset layer, the size of the key size in the overlay mark of the preset layer, the size of the distance between the overlay marks of the preset layer, the thickness of the mask of the preset layer and the selection mode of the reference point.
In some exemplary embodiments, the reference point determination module 802 is configured to determine the reference point in any one of the following ways:
determining a point with the largest height difference as the reference point in the first leveling map;
determining a point with the smallest height difference as the reference point in the first leveling map; or alternatively
And determining the point position of the height difference closest to the average value of the height differences of all the point positions as the reference point in the first leveling map.
In some exemplary embodiments, the first preset condition switches to a second preset condition, comprising:
switching from a previous wafer stage to a current wafer stage; and/or
And switching from the wafer in the previous batch to the wafer in the current batch.
The specific manner in which the various modules perform the operations in the apparatus of the above embodiments have been described in detail in connection with the embodiments of the method, and will not be described in detail herein.
Fig. 9 is a block diagram of a computer device 900, which is shown providing a means for determining the amount of pre-compensation for overlay error, according to an exemplary embodiment. The apparatus may be an evaluating apparatus or an accessing apparatus in the above-described exemplary embodiments of the present disclosure, for example, the computer device 900 may be provided as a terminal device. Referring to fig. 9, the computer apparatus 900 includes a processor 901, the number of which may be set to one or more as needed. The computer device 900 also includes a memory 902 for storing instructions, such as application programs, that are executable by the processor 901. The number of the memories can be set to one or more according to the requirement. Which may store one or more applications. The processor 901 is configured to execute instructions to perform the above-described methods.
It will be apparent to those skilled in the art that embodiments of the present disclosure may be provided as a method, apparatus (device), or computer program product. Accordingly, the present disclosure may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present disclosure may take the form of a computer program product embodied on one or more computer-usable storage media having computer-usable program code embodied therein. Computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, including, but not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital Versatile Disk (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer. Furthermore, it is well known to those skilled in the art that communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media.
In an exemplary embodiment, a non-transitory computer readable storage medium is provided that includes instructions, such as a memory 902 that includes instructions, that are executable by a processor 901 of an apparatus 900 to perform the above-described method. For example, the non-transitory computer readable storage medium may be ROM, random Access Memory (RAM), CD-ROM, magnetic tape, floppy disk, optical data storage device, etc.
In an exemplary embodiment of the present disclosure, a non-transitory computer readable storage medium is provided, which when executed by a processor of a determining apparatus, enables the determining apparatus to perform the method provided by the exemplary embodiment of the present disclosure.
The present disclosure is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (devices) and computer program products according to embodiments of the disclosure. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
In this disclosure, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of additional identical elements in an article or apparatus that comprises the element.
While the preferred embodiments of the present disclosure have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the disclosure.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present disclosure without departing from the spirit or scope of the disclosure. Thus, given that such modifications and variations of the present disclosure fall within the scope of the claims of the present disclosure and their equivalents, the intent of the present disclosure is to encompass such modifications and variations as well.
Claims (15)
1. A method for determining a pre-compensation amount of overlay error, the method comprising:
in the wafer manufacturing process, when a first preset condition is switched to a second preset condition, determining the height difference of corresponding points in a first leveling chart and a second leveling chart, wherein the first leveling chart is a leveling chart of a wafer obtained under the second preset condition, and the second leveling chart is a leveling chart obtained under the first preset condition; the point position corresponds to a position forming a height difference in a preset layer of the wafer under the second preset condition relative to a preset layer of the wafer under the first preset condition;
Determining a reference point in the first leveling map according to the height difference;
determining a reference angle according to the reference point;
determining initial reference amounts of all points in the first leveling map according to the reference angle;
and determining the pre-compensation amount of the overlay error according to the initial reference amount of the point position.
2. The method for determining the pre-compensation amount of overlay error according to claim 1, wherein determining the reference angle from the reference point comprises:
forming a first cone model extending to a reference surface of the wafer according to a preset rule on the basis of the vertex of the reference point;
determining a first radius of a bottom surface of the intersection of the first cone model and the reference surface of the wafer;
and determining the reference angle according to the height of the first cone model and the first radius of the bottom surface.
3. The method for determining the pre-compensation amount of the overlay error according to claim 2, wherein the forming the first cone model according to the preset rule based on the vertex of the reference point as the vertex includes any one of the following modes:
forming the first cone model by taking the vertex of the reference point as the vertex and cutting the bottom surface of the first cone model into the reference surface of the wafer;
Forming the first cone model by taking the vertex of the reference point as the vertex and in a mode that the bottom surface of the first cone model is circumscribed on the reference surface of the wafer;
and forming the first cone model by taking the vertex of the reference point as the vertex and adopting the mode that the ratio of the area of the bottom surface of the first cone model to the area of the reference surface of the wafer meets the preset proportion range.
4. A method of determining a pre-compensation amount for overlay error according to claim 2 or 3, wherein determining an initial reference amount for all points in the first level map based on the reference angle comprises:
forming a second cone model formed by taking corresponding vertexes as vertexes and facing a reference surface of the wafer according to the reference angle;
according to a second radius of the bottom surface of the second cone model intersecting the reference surface of the wafer;
and determining the initial reference quantity according to the second radius.
5. The method of determining the pre-compensation amount of overlay error according to claim 4, wherein determining the initial reference amount based on the second radius comprises:
Determining a quadrant in which a corresponding point is located according to a preset coordinate system in which the wafer is located;
and equally dividing the second radius into an initial reference quantity of an X axis and an initial reference quantity of a Y axis according to the quadrants and the preset coordinate system.
6. The method of determining the pre-compensation amount of overlay error according to claim 5, wherein determining the pre-compensation amount of overlay error based on the initial reference amount of the point locations comprises:
and determining the pre-compensation amount of the overlay error according to the initial reference amount of the X axis and the initial reference amount of the Y axis of all the points in the first leveling map.
7. The method of determining the pre-compensation amount of overlay error according to claim 6, wherein determining the pre-compensation amount of overlay error based on the initial reference amount of X-axis and the initial reference amount of Y-axis for all points in the first leveling map comprises:
determining a weight value based on the compensation amount of the preset layer;
determining the pre-compensation quantity of the X axis of the overlay error under the preset coordinate system according to the vector values of the initial reference quantity of the X axes of all the points in the first leveling map and the weight values;
And determining the pre-compensation quantity of the Y-axis of the overlay error under the preset coordinate system according to the vector values of the initial reference quantity of the Y-axis of all the points in the first leveling map and the weight values.
8. The method for determining the pre-compensation amount of the overlay error according to claim 7, wherein determining the pre-compensation amount of the overlay error for the X-axis in the preset coordinate system according to the vector values of the initial reference amounts of the X-axes of all the points in the first leveling map and the weight values, and determining the pre-compensation amount of the overlay error for the Y-axis in the preset coordinate system according to the vector values of the initial reference amounts of the Y-axes of all the points in the first leveling map and the weight values, comprises:
taking the product of the sum of vector values of initial reference amounts of X-axis of all points in the first leveling chart and the weight as the pre-compensation amount of the X-axis of the overlay error under the preset coordinate system;
and taking the product of the sum of vector values of initial reference quantities of Y-axes of all points in the first leveling map and the weight as the pre-compensation quantity of the Y-axis of the overlay error under the preset coordinate system.
9. The method of determining an amount of pre-compensation for overlay error according to claim 7, further comprising:
and determining the weight according to preset parameters of the preset layer of the wafer.
10. The method of claim 9, wherein the predetermined parameters include one or more of the following:
the method comprises the steps of selecting the type of the overlay mark of the preset layer, the size of the key size in the overlay mark of the preset layer, the size of the distance between the overlay marks of the preset layer, the thickness of the mask of the preset layer and the selection mode of the reference point.
11. The method for determining the pre-compensation amount of overlay error according to claim 1, wherein determining the reference point in the first level map according to the height difference comprises any one of the following means:
determining a point with the largest height difference as the reference point in the first leveling map;
determining a point with the smallest height difference as the reference point in the first leveling map; or alternatively
And determining the point position of the height difference closest to the average value of the height differences of all the point positions as the reference point in the first leveling map.
12. The method for determining the pre-compensation amount of an overlay error according to claim 1, wherein the first preset condition is switched to the second preset condition, comprising:
switching from a previous wafer stage to a current wafer stage; and/or
And switching from the wafer in the previous batch to the wafer in the current batch.
13. A device for determining a pre-compensation amount of an overlay error, the device comprising:
the height difference determining module is configured to determine the height difference of corresponding points in a first leveling chart and a second leveling chart when a first preset condition is switched to a second preset condition in the wafer manufacturing process, wherein the first leveling chart is a leveling chart of the wafer obtained under the second preset condition, and the second leveling chart is a leveling chart obtained under the first preset condition; the point position corresponds to a position forming a height difference in a preset layer of the wafer under the second preset condition relative to a preset layer of the wafer under the first preset condition;
a reference point determination module configured to determine a reference point in the first leveling map according to the height difference;
A reference angle determination module configured to determine a reference angle from the reference point location;
the initial reference quantity determining module is configured to determine initial reference quantities of all points in the first leveling map according to the reference angle;
a pre-compensation amount determination module configured to determine a pre-compensation amount of the overlay error based on the initial reference amount of the spot location.
14. A device for determining a pre-compensation amount of an overlay error, comprising:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to perform the method of any of claims 1-11.
15. A non-transitory computer readable storage medium, which when executed by a processor of a determining apparatus, enables the determining apparatus to perform the method of any one of claims 1-11.
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|---|---|---|---|
| CN202211129765.6A CN117761971A (en) | 2022-09-16 | 2022-09-16 | Method and device for determining pre-compensation amount of overlay error and storage medium |
| PCT/CN2023/070321 WO2024055485A1 (en) | 2022-09-16 | 2023-01-04 | Method and device for determining pre-compensation amount of overlay error, and storage medium |
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| CN202211129765.6A CN117761971A (en) | 2022-09-16 | 2022-09-16 | Method and device for determining pre-compensation amount of overlay error and storage medium |
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| NL1036557A1 (en) * | 2008-03-11 | 2009-09-14 | Asml Netherlands Bv | Method and lithographic apparatus for measuring and acquiring height data in relation to a substrate surface. |
| NL2013668A (en) * | 2014-01-10 | 2015-07-13 | Asml Netherlands Bv | Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product. |
| EP3270225A1 (en) * | 2016-07-11 | 2018-01-17 | ASML Netherlands B.V. | Method and apparatus for determining a fingerprint of a performance parameter |
| CN114675513A (en) * | 2022-03-11 | 2022-06-28 | 上海华力集成电路制造有限公司 | Overlay precision monitoring method |
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