CN117747534A - Manufacturing method of high-uniformity SOI silicon wafer - Google Patents
Manufacturing method of high-uniformity SOI silicon wafer Download PDFInfo
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- CN117747534A CN117747534A CN202311617821.5A CN202311617821A CN117747534A CN 117747534 A CN117747534 A CN 117747534A CN 202311617821 A CN202311617821 A CN 202311617821A CN 117747534 A CN117747534 A CN 117747534A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 140
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 129
- 239000010703 silicon Substances 0.000 title claims abstract description 127
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 65
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 65
- -1 hydrogen ions Chemical class 0.000 claims abstract description 45
- 230000003647 oxidation Effects 0.000 claims abstract description 45
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000005411 Van der Waals force Methods 0.000 claims abstract description 16
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 claims description 102
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 229940095676 wafer product Drugs 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 10
- 239000000047 product Substances 0.000 claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 8
- 238000001994 activation Methods 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 5
- 238000012216 screening Methods 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 3
- 238000000678 plasma activation Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000001727 in vivo Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Abstract
The invention relates to a method for improving uniformity of SOI silicon chips, which relates to the technical field of semiconductor silicon chip manufacture and comprises the steps of firstly carrying out thermal oxidation treatment on the surface of at least one of two silicon chips, then injecting hydrogen ions into the silicon chips subjected to the thermal oxidation treatment, controlling the energy of the hydrogen ions to reach a preset depth value of the hydrogen ions in the silicon chips, then carrying out bonding treatment on the silicon chips subjected to the hydrogen ions injection and the other silicon chip subjected to the advanced thermal oxidation or the non-thermal oxidation in a bonding machine by utilizing Van der Waals force, finally carrying out annealing treatment on the two silicon chips subjected to the bonding at the temperature of 300-500 ℃, forming bubbles by the injected hydrogen ions, stripping the hydrogen ions from the silicon chips, and carrying out planarization treatment on the two stripped silicon chips to obtain a first target silicon chip product and a second target silicon chip product respectively. The invention solves the problems of low uniformity and high cost of the SOI silicon wafer in the traditional manufacturing method.
Description
Technical Field
The invention relates to the technical field of semiconductor silicon wafer manufacturing, in particular to a manufacturing method of a high-uniformity SOI silicon wafer.
Background
Silicon-on-insulator (Silicon On Insulator, SOI) is a new generation of silicon-based materials that are widely used to achieve higher speed performance, higher packing density, and reduced power consumption. Therefore, the method has important application in low-voltage and low-power-consumption circuits, micro-mechanical sensors, photoelectric integration and the like.
The current SOI Wafer fabrication techniques mainly include the separation by implantation of oxygen (Separate by IMplant Oxygen, SIMOX) technique, wafer Bonding (WB), and Smart cut (Smart-cut) technique. The SIMOX technology is to implant oxygen ions into a silicon Wafer, control the implantation dosage and energy, and change the thickness of a silicon dioxide buried insulating layer and a top silicon layer, but with the continuous progress of the process, the requirement on the defects of the surface of a Wafer (Wafer) is higher and higher, and the SIMOX preparation method encounters a bottleneck. The Smart cut technology (Smart-cut) was proposed by m.bruel et al in 1995, which is based on the combination of ion implantation and bonding, wherein at least one of two silicon wafers is oxidized and then bonded together, and then the back surface is ground, etched and chemically mechanically polished to reduce the thickness.
The traditional SOI silicon wafer manufacturing method has some challenges including high manufacturing cost, uneven silicon wafer quality, difficult control of the stripping process and the like, so that the application of the SOI silicon wafer in the microelectronics industry is limited.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a method for improving the high uniformity of an SOI silicon wafer, which solves the problems of low uniformity and high cost of the SOI silicon wafer in the traditional manufacturing method through an innovative process flow.
In order to solve the technical problems, the method for improving the uniformity of the SOI silicon wafer comprises the following steps:
step S1, performing thermal oxidation treatment on the surface of at least one of two silicon wafers;
s2, implanting hydrogen ions into the silicon wafer subjected to thermal oxidation treatment, and controlling the energy of the hydrogen ions to reach a preset depth value of the hydrogen ions in the silicon wafer;
step 3, bonding the silicon wafer subjected to hydrogen ion injection with another silicon wafer subjected to advanced thermal oxidation or not subjected to thermal oxidation in a bonding machine by utilizing Van der Waals force;
step S4, annealing the two bonded silicon wafers at 300-500 ℃ to form bubbles of the injected hydrogen ions and stripping the bubbles from the silicon wafers;
and S5, carrying out planarization treatment on the two peeled silicon wafers to respectively obtain a first target silicon wafer product and a second target silicon wafer product.
Further, performing thermal oxidation treatment on at least one of the two silicon wafers in the step S1 includes:
placing the silicon wafer in a thermal oxidation device to heat to a preset temperature value range, wherein the preset temperature value range is 900-1200 ℃; according to the requirements of different customers on products, oxygen or water vapor is added into the thermal oxidation device to perform chemical reaction with the surface of the silicon wafer, so that silicon dioxide is generated; the thickness of the oxide film grown on the surface of the silica was measured.
Further, if the thickness of the oxide film measured by the customer is within 500nm, adding oxygen to the thermal oxidation device to perform chemical reaction with the surface of the silicon wafer; and if the thickness of the oxide film, which is required to be measured by the customer, is within 2um, adding water vapor into the thermal oxidation device to perform chemical reaction with the surface of the silicon wafer.
Further, the specific step of implanting hydrogen ions in the step S2 includes:
step S201, heating hydrogen gas in a store to form an ion beam by an ion source system;
step S202, screening hydrogen ions from the ion beam through a mass analyzer;
in step S203, after being provided by the focuser and the accelerator Shu Jubing, the screened hydrogen ions bombard the thermally oxidized silicon wafer in step 1, so as to complete the hydrogen injection treatment.
Furthermore, before bonding by using van der waals force in the step S3, the surfaces of the two silicon wafers are further processed, so that dangling bonds are generated on the surfaces of the two silicon wafers.
Further, in the fusion bonding process using van der Waals force in the step 3, the bonding pressure is applied to be 3N-10N, the continuous bonding time is 20 s-60 s, and the temperature is 20-50 ℃.
Further, the activation treatment is to perform plasma activation on the surface of the generated silicon dioxide layer by adopting rare gas, wherein the activation time is 30-60 s, and the power is 200-550W.
Further, the annealing treatment temperature in the step S4 is 350-500 ℃ and the time is 1.5-3 h.
Further, the first target silicon wafer product in the step S5 is cleaned, mechanically polished, oxidized, and then subjected to the next hydrogen injection and bonding operation; the second target silicon wafer product is a target SOI silicon wafer.
Compared with the prior art, the invention has the following effects:
1. the dosage of the implanted hydrogen ions is lower than that of SIMOX implanted oxygen by 2 orders of magnitude, and the hydrogen implantation operation can be completed by adopting a common ion implanter;
2. because the Silicon is formed by ion implantation, the thickness of the Silicon film is good in uniformity, the thickness is controllable, and the thickness can be controlled by implantation energy;
3. the surface defect is small, and the single crystallinity is kept better;
4. the stripped silicon wafer can still be continuously injected with hydrogen bonding and recycled, so that the preparation cost is greatly reduced.
Drawings
FIG. 1 is a flow chart of a method for fabricating a high uniformity SOI silicon wafer according to the present invention;
fig. 2 is a flow chart of implanting hydrogen ions into a silicon wafer according to the present invention.
Description of the embodiments
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, a method for improving uniformity of an SOI wafer includes the following steps:
step S1, performing thermal oxidation treatment on the surface of at least one of two silicon wafers;
s2, implanting hydrogen ions into the silicon wafer subjected to thermal oxidation treatment, and controlling the energy of the hydrogen ions to reach a preset depth value of the hydrogen ions in the silicon wafer, wherein the dosage of the hydrogen ions is 1e 16 cm -2 ；
Step 3, bonding the silicon wafer subjected to hydrogen ion injection with another silicon wafer subjected to advanced thermal oxidation or not subjected to thermal oxidation in a bonding machine by utilizing Van der Waals force;
step S4, annealing the two bonded silicon wafers at the temperature of 300-500 ℃ to form bubbles of the injected hydrogen ions and strip the hydrogen ions from the silicon wafers, wherein the annealing temperature is particularly 350-500 ℃ and the duration is generally 1.5-3 h;
and S5, carrying out planarization treatment on the two peeled silicon wafers to respectively obtain a first target silicon wafer product and a second target silicon wafer product.
In this embodiment, a method for improving uniformity of SOI silicon wafer is to perform thermal oxidation treatment on at least one surface of two silicon wafers to ensure that at least one surface of two silicon wafers has a layer of thermally oxidized SiO 2 A layer of good Si-SiO 2 And (5) an interface. Then rare gas ions (such as H+ or He+) are injected into Silicon to form an injection layer (the depth is usually less than 1 mu m), the hydrogen injection sheet is bonded with another supporting sheet, the hydrogen injection sheet is completely split from the particle injection layer after proper treatment to form an SOI structure, meanwhile, the surface of the Silicon wafer is polished, and the epitaxial mode is used to achieve the desired Silicon thickness. Meanwhile, the Silicon on the surface formed by ion implantation has better uniformity of a thick film, and the thickness of the Silicon can be controlled by the energy of the implanted hydrogen ions.
In the present embodiment, hydrogen ions are rare gas ions, and the dosage of the hydrogen ions in the present invention is mainly selected from the group consisting of1e of 16 cm -2 The oxygen implantation dosage is 2 orders of magnitude lower than that of SIMOX, and can be achieved by using a common ion implanter.
And then bonding the hydrogen ions subjected to ion implantation and another silicon wafer subjected to advanced thermal oxidation or non-thermal oxidation in a bonding machine by utilizing Van der Waals force, so that the two wafers are tightly attached together. Forming a specific "sandwich" structure. The surface of the silicon wafer is treated before bonding, so that the surface adsorption is of great importance. Mirror polishing sheet which has been thermally oxidized, thermally oxidized SiO 2 There is an amorphous quartz glass lattice structure. In SiO 2 The surface and in vivo of the membrane have some oxygen atoms in an unstable state. Under certain conditions they can get energy away from the silicon atom, giving rise to dangling bonds at the surface. When a large number of suspension bonds are arranged on the surfaces of the two silicon wafers, the two silicon wafers can be tightly attached by utilizing Van der Waals force, and the key bonding step is completed.
It should be noted that bonding of silicon wafers requires very high environmental requirements for workshops, and the entire process needs to be completed in an ultra clean room (class 1). According to ISO14644-1 international standard, class1 clean room does not allow 0.3 micron particles per square meter of air particles; particles with the size of 0.2 microns are less than or equal to 2 particles; 10 particles with the diameter of 0.1 micrometer are less than or equal to 10 particles, and a special air filter system is adopted to meet the process requirements. Because a bit of particles may affect the strength and product quality of the bonding sheet, affecting the use of the client.
And then annealing the two bonded silicon wafers at 300-500 ℃, wherein after hydrogen ions are implanted into the silicon, the interaction force between the two hydrogen atoms is hydrogen bonds, so that the silicon wafers are very easy to break. It is believed that its collapse produces hydrogen molecules and cracks in the crystal. And a large number of vacancies and interstitials are created during the ion implantation process. However, during annealing, vacancies combine with each other to form larger vacancies due to free energy, causing the hydrogen ions injected to form bubbles, since at relatively high annealing temperatures the hydrogen molecules are already able to move relatively freely in the silicon crystal. The free energy of the hydrogen molecule cracks and vacancies is lower than that of the lattice gaps, so that the cracks and the bubbles are gradually filled with hydrogen, and the pressure is rapidly increased. Thus, the peeling phenomenon is generated at the depth of the hydrogen ion implantation, and the peeling phenomenon is peeled from the silicon wafer.
Further, the specific step of performing thermal oxidation treatment on at least one of the two silicon wafers in the step S1 includes:
placing the silicon wafer in a thermal oxidation device to heat to a preset temperature value range, wherein the preset temperature value range is 900-1200 ℃;
according to the requirements of different customers on products, oxygen or water vapor is added into the thermal oxidation device to perform chemical reaction with the surface of the silicon wafer, so that silicon dioxide is generated;
the thickness of the oxide film grown on the surface of the silica was measured.
Specifically, if the thickness of the oxide film measured by the customer is within 500nm, oxygen is added into the thermal oxidation device to perform chemical reaction with the surface of the silicon wafer;
and if the thickness of the oxide film, which is required to be measured by the customer, is within 2um, adding water vapor into the thermal oxidation device to perform chemical reaction with the surface of the silicon wafer.
In this embodiment, the above thermal oxidation apparatus is to place a silicon wafer in a reaction tube made of quartz glass, and the reaction tube is heated by a resistance wire heating furnace to a certain temperature (the temperature is usually 900-1200 ℃ and can be reduced to below 600 ℃ under special conditions), and when oxygen or water vapor passes through the reaction tube (the typical air flow speed is 1 cm/s), a chemical reaction occurs on the surface of the silicon wafer, and the chemical reaction formula is as follows:
si (solid) +O 2 (gaseous) →SiO 2 (solid state)
Or (b)
Si (solid) +2H 2 O (vapor state) →SiO 2 (solid) +2H 2 (gaseous state)
SiO produced by the above reaction 2 The layer is generally between tens and tens of angstroms thick, and dry oxygen oxidation is performed by using dry pure oxygen as an oxidizing atmosphere, and the oxygen directly reacts with silicon at high temperature to generate silicon dioxide. First growing an oxide film on the surfaceThe oxidation is gradually carried out inwards slowly, the path of gas molecules is continuously prolonged along with the progress of the oxidation, the difficulty of the oxidation is also continuously increased, the thickness of dry oxygen oxidation is generally within 500nm, and the oxidation efficiency is low. The water vapor oxidation is to take high-purity water vapor as an oxidizing atmosphere, silicon dioxide generated by the reaction of silicon atoms and water molecules on the surface of a silicon wafer is higher in water vapor oxidation speed than oxygen oxidation speed, the thickness of the film can reach 2um, and different technical processes are generally selected to grow oxide films according to the requirements of different customers on the thickness of the product, so that a high-quality product is manufactured.
Further, as shown in fig. 2, the specific step of implanting hydrogen ions in the step S2 includes:
step S201, heating hydrogen gas in a store to form an ion beam by an ion source system;
step S202, screening hydrogen ions from the ion beam through a mass analyzer;
in step S203, after being provided by the focuser and the accelerator Shu Jubing, the screened hydrogen ions bombard the thermally oxidized silicon wafer in step 1, so as to complete the hydrogen injection treatment.
Specifically, in the present embodiment, H is first introduced by the ion source system 2 Heating and ionizing to form an ion beam, screening hydrogen ions by a mass analyzer, gathering the ion beam through a focusing device, an accelerator and the like, providing high energy, bombarding the ion beam on a silicon wafer oxidized in advance, and forming various complexes by hydrogen elements in crystal lattices and silicon atoms after the hydrogen ions are implanted into monocrystalline silicon, wherein one part of the hydrogen ions exist in gap positions of the silicon atoms, the other part of the hydrogen ions exist in defects, bubbles and facets in the silicon crystal.
Then, the energy of the implanted ions is controlled to achieve the purpose of controlling the implantation depth, namely, hydrogen ions are implanted at a preset specific depth, then the hydrogen ions implanted by an ion implanter are changed into hydrogen through a subsequent annealing process, defects such as bubbles, gaps, arching and the like are formed in the silicon layer to separate the defects from the implanted layer, the thickness of upper silicon of the SOI product is accurately controlled, and meanwhile, crystal lattices damaged by ion implantation are repaired. Repairing and stripping SOI upper silicon, and meeting the quality requirement.
Further, before bonding by using van der waals force in the step S3, the surfaces of the two silicon wafers are further activated, so that dangling bonds are generated on the surfaces of the two silicon wafers, and the van der waals force is enhanced. In this embodiment, the surface of the generated silicon dioxide layer is subjected to plasma activation by using rare gas, such as nitrogen which is easy to obtain and low in cost, the activation time is 30-60 s, the power is 200-550W, and the bonding strength can be greatly improved by the activation treatment, so that few voids or gaps are generated, and a better bonding effect is obtained.
After the hydrogen injection, the bonding of the processed silicon wafer is very high in environmental requirement of a workshop before bonding by utilizing Van der Waals force, and the whole process is required to be completed in an ultra-clean room (class 1). According to ISO14644-1 international standard, class1 clean room does not allow 0.3 micron particles per square meter of air particles; particles with the size of 0.2 microns are less than or equal to 2 particles; 10 particles with the diameter of 0.1 micrometer are less than or equal to 10 particles, and a special air filter system is adopted to meet the process requirements. Because a bit of particles may affect the strength and product quality of the bonding sheet, affecting the use of the client. And bonding one pre-oxidized silicon wafer and the other pre-oxidized or unoxidized silicon wafer in a bonding machine by utilizing Van der Waals force, so that the two wafers are tightly adhered together. Forming a specific "sandwich" structure. The surface of the silicon wafer is treated before bonding, so that the surface adsorption is of great importance. Mirror polishing sheet which has been thermally oxidized, thermally oxidized SiO 2 There is an amorphous quartz glass lattice structure. In SiO 2 The surface and in vivo of the membrane have some oxygen atoms in an unstable state. Under certain conditions they can get energy away from the silicon atom, giving rise to dangling bonds at the surface. When a large number of suspension bonds are arranged on the surfaces of the two silicon wafers, the two silicon wafers can be tightly attached by utilizing Van der Waals force, and the key bonding step is completed. Meanwhile, it is emphasized that in the fusion bonding process using van der Waals force, the bonding pressure is applied in the range of 3N to 10N, the continuous bonding time is 20s to 60s, and the temperature is 20 ℃ to 50 ℃.
After 2 wafers after bonding are continuously annealed at 350-500 ℃ for about 2.5 hours, namely after hydrogen ions are implanted into silicon, si-H-Si is one of the most main complexes, and the interaction force between two hydrogen atoms is hydrogen bond, so that the wafers are very easy to break. It is believed that its collapse produces hydrogen molecules and cracks in the crystal. And a large number of vacancies and interstitials are created during the ion implantation process. However, during annealing, vacancies combine with each other to form larger vacancies due to free energy, eventually forming bubbles. But at relatively high annealing temperatures the hydrogen molecules are already able to move relatively freely in the silicon crystal. The free energy of the hydrogen molecule cracks and vacancies is lower than that of the lattice gaps, so that the cracks and the bubbles are gradually filled with hydrogen, and the pressure is rapidly increased. Thus, the peeling phenomenon occurs at the depth of the hydrogen ion implantation.
After bonding is completed, the two silicon wafers are separately processed as follows:
specifically, the first target silicon wafer product in the step S5 is cleaned, mechanically polished, oxidized, and then subjected to the next hydrogen injection and bonding operation; the second target silicon wafer product is a target SOI silicon wafer. When the two silicon wafers are separated, the upper separated silicon wafer can be reused after cleaning, mechanical polishing, oxidation and the like, and implantation and bonding are performed again. The lower layer is separated from the target product, namely the high-uniformity SOI silicon wafer. And then the target product is subjected to subsequent polishing, cleaning and measuring, and the package can be sent to a customer for use.
Claims (9)
1. A method for improving uniformity of SOI silicon wafers is characterized by comprising the following steps:
step S1, performing thermal oxidation treatment on the surface of at least one of two silicon wafers;
s2, implanting hydrogen ions into the silicon wafer subjected to thermal oxidation treatment, and controlling the energy of the hydrogen ions to reach a preset depth value of the hydrogen ions in the silicon wafer;
step 3, bonding the silicon wafer subjected to hydrogen ion injection with another silicon wafer subjected to advanced thermal oxidation or not subjected to thermal oxidation in a bonding machine by utilizing Van der Waals force;
step S4, annealing the two bonded silicon wafers at 300-500 ℃ to form bubbles of the injected hydrogen ions and stripping the bubbles from the silicon wafers;
and S5, carrying out planarization treatment on the two peeled silicon wafers to respectively obtain a first target silicon wafer product and a second target silicon wafer product.
2. The method of claim 1, wherein performing a thermal oxidation process on at least one of the two silicon wafers of step S1 comprises:
placing the silicon wafer in a thermal oxidation device to heat to a preset temperature value range, wherein the preset temperature value range is 900-1200 ℃;
according to the requirements of different customers on products, oxygen or water vapor is added into the thermal oxidation device to perform chemical reaction with the surface of the silicon wafer, so that silicon dioxide is generated;
the thickness of the oxide film grown on the surface of the silica was measured.
3. A method for improving uniformity of an SOI wafer according to claim 2,
if the thickness of the oxide film measured by the client is within 500nm, adding oxygen into the thermal oxidation device to perform chemical reaction with the surface of the silicon wafer;
and if the thickness of the oxide film, which is required to be measured by the customer, is within 2um, adding water vapor into the thermal oxidation device to perform chemical reaction with the surface of the silicon wafer.
4. The method for improving uniformity of an SOI wafer according to claim 1, wherein said implanting hydrogen ions in step S2 comprises:
step S201, heating hydrogen gas in a store to form an ion beam by an ion source system;
step S202, screening hydrogen ions from the ion beam through a mass analyzer;
in step S203, after being provided by the focuser and the accelerator Shu Jubing, the screened hydrogen ions bombard the thermally oxidized silicon wafer in step 1, so as to complete the hydrogen injection treatment.
5. The method of claim 1, wherein before bonding by van der waals force in step S3, the surfaces of the two silicon wafers are further activated to generate dangling bonds.
6. The method of claim 1 or 5, wherein in the step 3, the bonding pressure is 3N to 10N, the bonding time is 20s to 60s, and the temperature is 20 ℃ to 50 ℃ during the fusion bonding process by using van der waals force.
7. The method for improving uniformity of an SOI silicon wafer according to claim 5, wherein the activation treatment is to perform plasma activation on the surface of the silicon dioxide layer by using a rare gas, the activation time is 30 to 60 seconds, and the power is 200W to 550W.
8. The method of claim 1, wherein the annealing temperature in step S4 is 350 ℃ to 500 ℃ for 1.5h to 3h.
9. The method of claim 1, wherein the first target silicon wafer product in step S5 is cleaned, mechanically polished, oxidized, and left for the next hydrogen implantation and bonding operation; the second target silicon wafer product is a target SOI silicon wafer.
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