CN117737700A - Thin film deposition apparatus - Google Patents

Abstract

The application belongs to the technical field of film plating, and relates to film deposition equipment, which comprises a reaction cavity, a first air inlet component, a second air inlet component and an air source component, wherein the reaction cavity comprises a cavity body and a cavity cover, when the cavity body and the cavity cover are matched, an accommodating space can be formed, at least part of the first air inlet component is positioned in the accommodating space and is arranged around the inner side wall of the cavity body, and a plurality of first air holes are formed in the first air inlet component; at least part of the second air inlet assembly is positioned in the accommodating space, and a plurality of second air holes are formed in the second air inlet assembly; the air source assembly is connected with the first air inlet assembly and the second air inlet assembly, and releases first air from the inner side wall of the cavity to the central direction of the accommodating space through a plurality of first air holes, and releases second air from the cavity cover to the bottom direction of the cavity through a second air hole. The thin film deposition apparatus can simultaneously satisfy two molding modes of ALD and CVD through the cooperation of the first air inlet component and the second air inlet component, thereby reducing the production cost and the operation complexity.

Description

Thin film deposition apparatus

Technical Field

The application relates to the technical field of film plating, in particular to film deposition equipment.

Background

Existing thin film deposition equipment commonly adopts two modes of ALD (atomic layer deposition technology) and CVD (chemical vapor deposition technology) to prepare films. ALD is the alternating introduction of two or more chemical vapor precursors into a reaction chamber, while CVD is the introduction of two or more gases into a reaction chamber after they are mixed together. However, ALD and CVD often need to be performed in different equipment or chambers due to gas path limitations in the thin film deposition equipment, greatly increasing production costs.

Disclosure of Invention

In view of the foregoing, it is necessary to provide a thin film deposition apparatus to solve the technical problem that the existing thin film deposition apparatus cannot be compatible with two film forming modes of ALD and CVD, and to save the cost.

The application provides a thin film deposition device, which comprises a reaction cavity, a first air inlet component, a second air inlet component and an air source component, wherein the reaction cavity comprises a cavity and a cavity cover, the cavity cover is configured to move relative to an opening of the cavity, and when the cavity and the cavity cover are matched, an accommodating space can be formed, and the accommodating space is used for accommodating a processing object; at least part of the first air inlet component is positioned in the accommodating space and surrounds the inner side wall of the cavity, and a plurality of first air holes are formed in the part of the first air inlet component positioned in the cavity at intervals along the inner side wall of the cavity; at least part of the second air inlet assembly is positioned in the accommodating space, and a plurality of second air holes are formed in the part of the second air inlet assembly positioned in the cavity; the air source assembly is connected to the first air inlet assembly and the second air inlet assembly, the air source assembly is configured to store first air and second air, the first air is released from the inner side wall of the cavity to the center direction of the accommodating space through a plurality of first air holes, and the second air is released from the cavity cover to the bottom direction of the cavity through a second air hole, wherein the first air and the second air are gases with different components.

According to the thin film deposition equipment, the first gas can be released from the inner side wall of the cavity to the center direction of the accommodating space through the first air hole in the first air inlet assembly, and the second gas can be released from the cavity cover to the bottom direction of the cavity through the second air hole of the second air inlet assembly. Compared with the traditional single-gas-path gas-inlet film deposition equipment, the film deposition equipment can simultaneously meet the requirements of two modes of ALD and CVD through the cooperation of the first gas inlet component and the second gas inlet component, namely, the two modes of ALD and CVD film formation are supported in the same film deposition equipment, so that the production cost is reduced, and the operation complexity is reduced.

In at least one embodiment, the cavity comprises a cavity bottom and a cavity wall, one end of the cavity wall is connected with the cavity bottom in a sealing way, and the cavity wall and the cavity bottom enclose a containing cavity; the inner side of the cavity wall is circumferentially provided with a plurality of special air pipes, each special air pipe is provided with a plurality of first air holes, and the first air holes are communicated with the accommodating space; the outside of chamber wall is provided with the air inlet joint, and air inlet joint's one end wears to locate the chamber wall to be linked together with special trachea, air inlet joint's the other end is connected with the air source subassembly, and special trachea, air inlet joint and first air vent form the at least part component of first air inlet subassembly jointly.

In at least one embodiment, the thin film deposition apparatus further comprises a frame and a first driving mechanism, wherein the first driving mechanism comprises a first driving piece and a first transmission piece, the first driving piece is installed in the frame, one end of the first transmission piece is connected with the output end of the first driving piece, and the other end of the first transmission piece penetrates through the frame and is connected with the cavity cover; the first driving member is configured to drive the cavity cover to move in a direction approaching or moving away from the cavity by the first transmission member.

In at least one embodiment, the thin film deposition apparatus further includes a stage mounted to the accommodation space, the stage configured to support the processing object, and a second driving mechanism; the second driving mechanism comprises a second driving piece and a second transmission piece, the second driving piece is arranged outside the accommodating space, one end of the second transmission piece is connected with the output end of the second driving piece, and the other end of the second transmission piece penetrates through the cavity bottom to be connected with the bearing table; the second driving member is configured to drive the carrying platform to move in a direction approaching or separating from the cavity cover through the second driving member.

In at least one embodiment, the second driving member, the first transmission member, and the first driving member are sequentially arranged along the first direction; the first direction is the direction in which the cavity cover moves towards the cavity; the extending direction of the second driving piece, the extending direction of the first transmission piece and the extending direction of the first driving piece are mutually staggered.

In at least one embodiment, the cavity cover comprises an air inlet cover and a uniform flow plate, the air inlet cover is provided with a plurality of air inlet holes, and the air inlet cover is connected with the first transmission piece; the uniform flow plate is connected with the air inlet cover, a plurality of mutually independent flow passages are formed between the uniform flow plate and the air inlet cover, each flow passage corresponds to one air inlet hole, and the flow passages are communicated with the air inlet holes; and each flow channel is provided with a plurality of second air holes, the second air holes are communicated with the flow channels and the accommodating space, and the air inlet holes, the flow channels and the second air holes jointly form at least part of elements of the second air inlet assembly.

In at least one embodiment, the cavity bottom is provided with a pipeline connecting hole which is communicated with the accommodating space; the thin film deposition equipment further comprises a tail row assembly, the tail row assembly comprises a tail gas processor and a discharge pipeline, the tail gas processor is arranged on the rack, one end of the discharge pipeline is connected with the tail gas processor, and the other end of the discharge pipeline is communicated with the pipeline connecting hole.

In at least one embodiment, the second transmission member is provided with a relief port configured to relief the discharge conduit when the discharge conduit is connected to the conduit connection hole.

In at least one embodiment, the thin film deposition apparatus further comprises a vacuum pumping assembly, the vacuum pumping assembly comprises a vacuum pumping pipe and a vacuum generator, the vacuum generator is arranged on one side of the tail gas processor, one end of the vacuum pumping pipe is communicated with the accommodating space, and the other end of the vacuum pumping pipe is connected with the vacuum generator; the vacuum generator is configured to draw gas from the accommodating space through the evacuation tube so as to place the reaction chamber in a vacuum state.

In at least one embodiment, the thin film deposition apparatus further comprises an ion generating assembly disposed at the periphery of the accommodating space and in communication with the accommodating space; the plasma generating assembly is configured to deliver plasma to the receiving space.

Drawings

FIG. 1 is a schematic view of a thin film deposition apparatus according to an embodiment of the present application;

FIG. 2 is a schematic cross-sectional view of the chamber shown in FIG. 1;

FIG. 3 is a schematic view of the structure of the chamber cover shown in FIG. 1;

FIG. 4 is a schematic cross-sectional view of the chamber lid shown in FIG. 3 taken along line A-A;

FIG. 5 is a schematic view of a middle flow homogenizing plate according to an embodiment of the present application;

FIG. 6 is a schematic diagram of a middle flow-homogenizing plate according to an embodiment of the present application;

FIG. 7 is a schematic diagram III of a middle flow homogenizing plate according to an embodiment of the present application;

FIG. 8 is a schematic structural view of the first driving mechanism and the second driving mechanism engaged with the cavity cover according to the embodiment of the present application;

fig. 9 is a schematic view of the first and second drive mechanisms of fig. 8 at another angle to the chamber lid.

Description of the main reference signs

Thin film deposition apparatus 100

Reaction chamber 10

Cavity 11

Cavity bottom 111

Cavity wall 112

Cavity cover 12

Flow homogenizing plate 121

Groove 1211

Intake cover 122

Accommodation space 13

First air intake assembly 20

Special air pipe 21

First air hole 22

Second air intake assembly 30

Air inlet hole 31

First air inlet hole 311

Second air intake hole 312

Third air intake hole 313

Flow channel 32

First flow passage 321

First flow path segment 3211

Second flow channel 322

Second flow path segment 3221

Third flow passage 323

Third flow channel section 3231

Second air hole 33

First drive mechanism 40

First driving member 41

First transmission member 42

Frame 50

Second drive mechanism 60

Second driving member 61

Second transmission member 62

Dodging port 621

Load-bearing table 70

Tail row assembly 80

Vacuum pumping assembly 90

The following detailed description will further illustrate the application in conjunction with the above-described figures.

Detailed Description

Further advantages and effects of the present application will be readily apparent to those skilled in the art from the present disclosure, by describing embodiments of the present application with specific examples. While the description of the present application will be presented in conjunction with the preferred embodiments, it is not intended that the features of this application be limited to only this implementation. Rather, the purpose of the description presented in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the present application. The following description contains many specific details in order to provide a thorough understanding of the present application. The present application may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the focus of the application. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.

Hereinafter, the terms "first," "second," and the like, if used, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.

In the present application, the term "coupled" should be interpreted broadly, unless explicitly stated or defined otherwise, as such, as the term "coupled" may be fixedly coupled, detachably coupled, or as a single piece; can be directly connected or indirectly connected through an intermediate medium. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.

In the following detailed description of the embodiments in conjunction with the drawings, which are not to scale in general, the drawings illustrating the partial structure of the device are not to scale and are merely examples, which should not limit the scope of the present application.

For the purpose of making the objects, technical solutions and advantages of the present application more apparent, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.

The present application provides a thin film deposition apparatus 100 for processing a processing object. It should be noted that the processing object may be crystalline silicon, a passivation layer of a silicon wafer or a glass substrate in the manufacture of a thin film solar cell, and other devices requiring thin film deposition, which is not limited in this application.

As shown in fig. 1, 2 and 3, the thin film deposition apparatus 100 includes a reaction chamber 10, a first gas inlet assembly 20, a second gas inlet assembly 30, and a gas source assembly (not shown). Wherein the reaction chamber 10 includes a chamber body 11 and a chamber cover 12, the chamber cover 12 is configured to be movable with respect to an opening of the chamber body 11, and an accommodating space 13 is formed when the chamber body 11 and the chamber cover 12 are mated, the accommodating space 13 being for accommodating a processing object (not shown). It should be noted that the accommodating space 13 is a closed reaction space, and can provide a stable reaction environment, thereby improving uniformity and quality of thin film deposition.

In addition, at least part of the first air inlet assembly 20 is located in the accommodating space 13 and is arranged around the inner side wall of the cavity 11, and a plurality of first air holes 22 are formed in the portion of the first air inlet assembly 20 located in the cavity 11 at intervals along the inner side wall of the cavity 11. At least part of the second air inlet assembly 30 is located in the accommodating space 13, and a plurality of second air holes 33 are formed in the portion, located in the cavity 11, of the second air inlet assembly 30.

In addition, a gas source assembly is connected to the first and second gas inlet assemblies 20 and 30, and is configured to store the first and second gases, and release the first gas from the inner sidewall of the chamber 11 to the center direction of the accommodating space 13 through the plurality of first gas holes 22, and release the second gas from the chamber cover 12 to the bottom direction of the chamber 11 through the second gas holes 33.

Wherein the first gas and the second gas are gases of different compositions. It should be noted that the first gas and the second gas may be one or more of a chemical vapor precursor, a reaction gas, a carrier gas, a diluent gas, or a mixed gas, and the present application is not limited thereto, specifically according to the chemical reaction required and the requirement of the thin film material.

As can be appreciated, when thin film deposition is required, the thin film deposition apparatus 100 first controls the chamber cover 12 to close the opening of the chamber 11 to form the accommodating space 13. Then, the corresponding gas in the gas source assembly is conveyed into the reaction chamber 10 through the first gas inlet assembly 20 and/or the second gas inlet assembly 30, so that the gas and the surface of the processing object are subjected to chemical reaction, and a film is deposited on the surface of the processing object. When the film deposition is completed, the operator controls the cavity cover 12 to open the opening of the cavity 11, and the processing object can be taken out for subsequent operation.

For example, when ALD is used for film formation, the thin film deposition apparatus 100 releases the first chemical vapor precursor from the inner sidewall of the chamber 11 toward the center of the accommodating space 13 through the first air hole 22 in the first air inlet assembly 20, so that the first chemical vapor precursor reacts with the surface of the processing object and forms a thin film. Subsequently, the thin film deposition apparatus 100 releases the second chemical vapor precursor from the chamber cover 12 toward the bottom of the chamber 11 through the second air holes 33 in the second air inlet assembly 30, so that the second chemical vapor precursor reacts with the surface of the processing object and forms another thin film. Thus, atomic layer film growth may be achieved by alternately and cyclically delivering chemical vapor precursors through the first and second gas inlet assemblies 20 and 30.

Before the first chemical vapor precursor or the second chemical vapor precursor is introduced, the residual chemical vapor precursor on the surface of the processing object needs to be purged to ensure the stability and uniformity of the film components.

Of course, in other embodiments, the first chemical vapor precursor and the second chemical vapor precursor may be both separately delivered by the first air intake assembly 20 or the second air intake assembly 30, which is not limited in this application, and those skilled in the art may choose according to the actual situation.

When CVD film formation is employed, the thin film deposition apparatus 100 releases a mixed gas from the inner side wall of the chamber 11 toward the center of the accommodating space 13 through the first air holes 22 in the first air inlet assembly 20, and the mixed gas chemically reacts with the surface of the processing object and deposits a thin film on the surface of the processing object. Alternatively, the thin film deposition apparatus 100 releases the mixed gas from the chamber cover 12 toward the bottom of the chamber 11 through the second air holes 33 in the second air inlet assembly 30, and the mixed gas chemically reacts with the surface of the processing object and deposits a thin film on the surface of the processing object.

In summary, compared to the conventional single-gas-path gas-inlet thin film deposition apparatus 100, the thin film deposition apparatus 100 can simultaneously satisfy two modes of ALD and CVD by matching the first gas inlet assembly 20 and the second gas inlet assembly 30, i.e., simultaneously support two modes of ALD and CVD in the same thin film deposition apparatus 100, which is beneficial to reducing production cost and complexity of operation.

In one embodiment, as shown in fig. 1 and 2, the cavity 11 includes a cavity bottom 111 and a cavity wall 112, one end of the cavity wall 112 is connected with the cavity bottom 111 in a sealing manner, and the cavity wall 112 and the cavity bottom 111 enclose a cavity. Wherein, a plurality of special air pipes 21 are arranged around the inner side of the cavity wall 112, each special air pipe 21 is provided with a plurality of first air holes 22, and the first air holes 22 are communicated with the accommodating space 13. It should be noted that, by disposing the special air pipe 21 around the cavity wall 112, the air intake of the first air intake assembly 20 can be made more uniform, so as to improve the quality and uniformity of the film deposition.

In addition, an air inlet connector (not shown) is disposed on the outer side of the cavity wall 112, one end of the air inlet connector penetrates through the cavity wall 112 and is communicated with the air outlet pipe 21, the other end of the air inlet connector is connected with the air source assembly, and the air outlet pipe 21, the air inlet connector and the first air hole 22 together form at least part of the elements of the first air inlet assembly 20.

Specifically, each of the tertiary air pipes 21 is connected to a corresponding interface in the air intake joint, in other words, the tertiary air pipes 21 are in one-to-one correspondence with the interfaces in the air intake joint. Therefore, different gases in the gas source assembly can be ensured to be only introduced into the corresponding special gas pipe 21, and the problem that the chemical reaction between the latter gas and a processing object is affected due to the fact that the former gas remains in the special gas pipe 21 and is doped with the latter gas when a plurality of gases are introduced into the same special gas pipe 21 is avoided.

It will be appreciated that when gas is delivered to the accommodation space 13 by the first gas inlet assembly 20, the gas inlet connector introduces a different gas into the corresponding tertiary gas pipe 21 by connecting the gas source assembly. Then, the gas in each special gas pipe 21 passes through the corresponding first gas hole 22 and enters the accommodating space 13 to chemically react with the surface of the processing object.

In one embodiment, as shown in fig. 2, the first air hole 22 is disposed along the axial direction of the tertiary air pipe 21. By opening the first gas hole 22 on the side of the gas pipe 21 facing the axis, the gas entering the accommodating space 13 can be brought closer to the object to be processed, contributing to better chemical reaction.

Of course, in other embodiments, the first gas hole 22 may be disposed along other directions, so long as the gas can enter the accommodating space 13 and react with the processing object, which is not limited in this application, and those skilled in the art can choose according to practical situations.

In one embodiment, a plurality of tertiary air pipes 21 are arranged in a height direction of the cavity wall 112. In other words, the tertiary air pipe 21 is layered in the cavity wall 112. Through the layering arrangement of the plurality of special air pipes 21, more kinds of gas can be provided for the reaction cavity 10 so as to meet the requirements of different film making processes. Specifically, a gap may be left between two adjacent special air pipes 21, that is, a plurality of special air pipes 21 are arranged at intervals. Alternatively, there is no gap between two adjacent tertiary air pipes 21, but the tertiary air pipes 21 are in contact with each other, that is, the tertiary air pipes 21 are closely arranged, which is not limited in this application.

In one embodiment, a heating assembly (not shown) and a cooling assembly (not shown) are further disposed on the cavity wall 112, the heating assembly includes a heating component (not shown) and a connecting component (not shown), the heating component is located in the cavity, and the connecting component penetrates through the cavity wall 112 and is electrically connected with the heating component. Wherein the first air intake assembly 20, the heating member and the cooling member are sequentially arranged from the central axis of the chamber bottom 111 toward the chamber wall 112.

It should be noted that, by integrating the functional components such as the heating component, the first air intake component 20, and the cooling component into the cavity wall 112, the cavity cover 12 and the cavity bottom 111 can have enough space layout and other mechanical structures, for example, a liftable carrying table is arranged on the cavity bottom 111, and a driving mechanism for driving the cavity cover 12 to open and close is arranged below the cavity bottom 111, so that the functional components (specifically, the heating component, the first air intake component, the cooling component, etc.) and the mechanical structures of the reaction cavity 10 can be reasonably arranged under the condition of smaller volume.

In one embodiment, the heating element may be a heating wire, a heating tube, or other effective heating device. The cooling component can be a cooling pipe adopting water cooling, can also adopt a heat pipe heat dissipation mode, can also be other effective cooling modes, is not limited in this application, and can be selected according to actual conditions by a person skilled in the art.

Specifically, the heating assembly further includes a shroud (not shown) disposed between the cavity wall 112 and the heating element and fixedly connected to the cavity wall 112, the shroud surrounding the heating element, the surface of the shroud facing the heating element being reflective, the reflective being for reflecting infrared light. The setting of bounding wall can increase the heating performance of heating element, improves the speed that the intracavity was raised temperature, and then improves the speed of reaction.

In this embodiment, the heating element is mounted to the enclosure by a mount. That is, the coaming can not only increase the heating speed, but also be used as a mounting carrier for the fixing member, thereby avoiding the fixing member from being directly mounted on the cavity wall 112 and avoiding the complicated operations of punching holes on the cavity wall 112 and the like.

In an embodiment, as shown in fig. 1 and 8, the thin film deposition apparatus 100 further includes a frame 50 and a first driving mechanism 40, the first driving mechanism 40 includes a first driving member 41 and a first transmission member 42, the first driving member 41 is installed in the frame 50, one end of the first transmission member 42 is connected to an output end of the first driving member 41, and the other end of the first transmission member 42 is disposed through the frame 50 and connected to the chamber cover 12. The first driving member 41 is configured to drive the chamber cover 12 to move in a direction approaching or moving away from the chamber 11 by the first transmission member 42.

It will be appreciated that when thin film deposition is required, the first driving member 41 drives the chamber cover 12 to move toward the chamber 11 through the first driving member 42, so that the chamber cover 12 is in close contact with the chamber 11 to form a closed accommodating space 13, thereby providing a stable reaction environment. When loading or cleaning maintenance of the processing object is required, the first driving member 41 drives the chamber cover 12 to move in a direction away from the chamber 11 through the first transmission member 42 to separate the chamber cover 12 from the chamber 11.

On the other hand, by providing the first driving mechanism 40, the degree of automation of the thin film deposition apparatus 100 can be improved, thereby improving the working efficiency and the operation convenience. On the other hand, in the thin film deposition apparatus 100, the first driving member 41 is disposed inside the frame 50, and the first transmission member 42 is disposed through the frame 50, so that the first driving mechanism 40 with larger occupied area and larger volume is disposed in the frame 50, and is not easy to be damaged by collision, and in external view, a user can only see part of the first transmission member 42 to drive the cavity cover 12 to open or close the cavity 11, so that the structure of the thin film deposition apparatus 100 is more neat. At the same time, more space is available on the exterior or upper side of the rack 50 for mounting other modules, such as gas cabinets, electrical cabinets, etc., which are more compact.

In an embodiment, as shown in fig. 1 and 8, the thin film deposition apparatus 100 further includes a stage 70 and a second driving mechanism 60, the stage 70 being mounted to the accommodation space 13, the stage 70 being configured to support a processing object. In addition, the second driving mechanism 60 includes a second driving member 61 and a second transmission member 62, the second driving member 61 is installed outside the accommodating space 13, one end of the second transmission member 62 is connected with an output end of the second driving member 61, and the other end of the second transmission member 62 passes through the cavity bottom 111 to be connected with the bearing table 70; the second driving member 61 is configured to drive the stage 70 to move in a direction approaching or moving away from the chamber lid 12 by the second driving member 61.

As can be appreciated, when the position of the processing object needs to be adjusted, the technician controls the second driving member 61 to work, and the second driving member 61 drives the carrying platform 70 to move along the vertical direction (specifically, the height direction of the cavity 11) through the second transmission member 62, so as to drive the processing object on the carrying platform 70 to move along the vertical direction. Thereby, adjustment of the distance between the processing object and the chamber cover 12 is achieved.

In one embodiment, as shown in fig. 8 and 9, the second driving member 61, the first transmission member 42, and the first driving member 41 are sequentially arranged in the first direction. It should be noted that the first direction is a direction in which the chamber cover 12 moves toward the chamber 11. The extending direction (U direction) of the second driver 61, the extending direction (W direction) of the first transmission member 42, and the extending direction (V direction) of the first driver 41 are staggered.

Specifically, the extending direction of the first transmission member 42, the extending direction of the first driving member 41, and the extending direction of the second driving member 61 are disposed at an included angle. Thereby, even though the space is fully utilized, interference of movement among the second driving member 61, the first transmission member 42 and the first driving member 41 is reduced, and the whole of the thin film deposition apparatus 100 can be made more compact.

In one embodiment, as shown in fig. 3-5, the chamber lid 12 includes an intake lid 122 and a flow uniformity plate 121. The air inlet cover 122 is provided with a plurality of air inlet holes 31, and the air inlet cover 122 is connected with the first transmission member 42. The flow-homogenizing plate 121 is connected to the inlet cover 122, and forms a plurality of flow passages 32 with the inlet cover 122 independently of each other.

Specifically, the flow channel 32 includes a plurality of flow channel sections, each of which is provided with the second air hole 33, and the flow channel sections are communicated with the accommodating space 13 through the second air hole 33. All the runner sections of the same runner 32 are communicated with the same air inlet hole 31, and different runners 32 are respectively communicated with different air inlet holes 31.

That is, the plurality of flow channels 32 are independent of each other, and can simultaneously introduce a plurality of gases into the accommodating space 13, so as to reduce the risk of corrosion damage to the cavity cover 12 caused by mixing the plurality of gases in advance. It should be noted that the air intake hole 31, the flow channel 32, and the second air hole 33 together form at least a part of the elements of the second air intake assembly 30.

In one embodiment, among the plurality of runner segments of the same runner 32, a runner segment of another runner 32 is provided between two adjacent runner segments. That is, the plurality of flow channels 32 can form a staggered arrangement form, so that a plurality of gases are easier to mix with each other when being sprayed out to the accommodating space 13, thereby improving the mixing efficiency and uniformity and further improving the film deposition effect.

In one embodiment, the sum of the cross-sectional areas of all the second air holes 33 in a single flow path section is defined as the intake area. Among the multiple flow channel sections of the same flow channel 32, the intake area of the flow channel section far from the intake hole 31 is larger than that of the flow channel section near to the intake hole 31.

That is, at the initial stage of the gas intake of the flow channel 32, the distribution of the gas in the flow channel sections of the same flow channel 32 is not uniform, i.e. the gas in the flow channel section close to the gas inlet hole 31 is more, and the gas in the flow channel section far from the gas inlet hole 31 is less, so that the uniformity of the gas release in the flow channel sections of the same flow channel 32 can be improved by the above arrangement of the second gas hole 33.

Specifically, in one embodiment, the number of the second air holes 33 in the flow passage section far from the air intake hole 31 is larger than the number of the second air holes in the flow passage section near to the air intake hole 31 in the plurality of flow passage sections of the same flow passage 32. That is, by increasing the number of the second air holes 33 in the flow passage section away from the air intake hole 31, and further, on the premise that the cross-sectional areas of the second air holes 33 in each flow passage section are uniform, an increase in the intake area of the flow passage section away from the air intake hole 31 is achieved.

Alternatively, in another embodiment, the cross-sectional area of the second air holes 33 in the flow path section distant from the air intake hole 31 is larger than the cross-sectional area of the second air holes 33 in the flow path section close to the air intake hole 31 in the plurality of flow path sections of the same flow path 32. That is, by increasing the cross-sectional area of the second air holes 33 in the flow passage section away from the air intake hole 31, and further, on the premise that the number of the second air holes 33 in each flow passage section is uniform, an increase in the intake area of the flow passage section away from the air intake hole 31 is achieved.

Alternatively, the number of the second air holes 33 in the flow path section distant from the air intake hole 31 is larger than the number of the second air holes 33 in the flow path section close to the air intake hole 31 among the plurality of flow path sections of a part of the flow paths 32 among the plurality of flow paths 32. The cross-sectional area of the second air holes 33 in the flow passage section distant from the air intake hole 31 is larger than the cross-sectional area of the second air holes 33 in the flow passage section close to the air intake hole 31 in the plurality of flow passage sections of the flow passage 32 of another part of the plurality of flow passages 32. That is, in the same chamber cover 12, the number factor and the cross-sectional area factor of the second air holes 33 can be combined to design and arrange, thereby improving the uniformity of the release of the second air.

Specifically, the second air holes 33 in the plurality of flow channel sections in the same flow channel 32 may sequentially select a round hole, a short waist hole, a long waist hole, and an entire elongated hole in a direction gradually away from the air intake hole 31.

In one embodiment, as shown in fig. 3 and 5 to 7, the flow passages 32 formed between the intake cover 122 and the uniform flow plate 121 are specifically three, namely, a first flow passage 321, a second flow passage 322 and a third flow passage 323. The number of the air inlets 31 is three, namely a first air inlet 311, a second air inlet 312 and a third air inlet 313.

Specifically, the first flow passage 321 is provided with a plurality of first flow passage segments 3211, the second flow passage 322 is provided with a plurality of second flow passage segments 3221, and the third flow passage 323 is provided with a third flow passage segment 3231. Wherein, the first flow channel segments 3211 are communicated with the first air inlet holes 311, the second flow channel segments 3221 are communicated with the second air inlet holes 312, and the third flow channel segments 3231 are communicated with the third air inlet holes 313.

Wherein, a second flow channel section 3221 is arranged between two adjacent third flow channel sections 3231, and a first flow channel section 3211 is arranged between the third flow channel sections 3231 and the second flow channel sections 3221, thereby realizing staggered arrangement of the first flow channel 321, the second flow channel 322 and the third flow channel 323 and improving the distribution uniformity of various gases during spraying.

Still more specifically, the first flow path 321 includes a first main flow path segment (not shown) and a plurality of first flow path segments 3211. The middle part of the first main runner section is communicated with the first air inlet hole 311, and all first runner sections 3211 of the first runner 321 are sequentially arranged at intervals along the extending direction of the first main runner section and are respectively communicated with the first runner 321.

Similarly, the second flow channel 322 includes a second main flow channel section (not shown) and a plurality of second flow channel sections 3221. The middle part of the second main flow channel section is communicated with the second air inlet hole 312, and all second flow channel sections 3221 of the second flow channel 322 are sequentially arranged at intervals along the extending direction of the second main flow channel section and are respectively communicated with the second main flow channel section.

More specifically, the third flow path 323 includes a plurality of parallel and spaced apart third flow path segments 3231. All the third flow channel sections 3231 are sequentially arranged at intervals and sequentially connected end to end, wherein the first flow channel section is connected to the third air inlet 313.

Of all the third flow path sections 3231 of the third flow path 323, the third flow path section 3231 located in the trailing row is provided with one second air hole 33. The second air holes 33 are bar-shaped holes extending a length equal to the length of the third flow path section 3231. Through the arrangement, the air inlet area of the third flow passage section 3231 positioned on the tail row is effectively enlarged and lifted, the gas release efficiency is improved, and the gas release uniformity is further improved.

In one embodiment, the second air hole 33 includes a gas inlet channel (not shown), a transition through hole (not shown), and a gas outlet channel (not shown) that are sequentially communicated. The gas inlet channel is formed on one side of the uniform flow plate 121, which abuts against the air inlet cover 122, and the gas outlet channel is formed on one side of the uniform flow plate 121, which is far away from the air inlet cover 122.

Specifically, the inner diameter of the gas inlet channel gradually decreases in a direction away from the gas inlet cover 122. By the above arrangement, the deposition of the gas in the second air hole 33 is reduced, and the formation of the vortex of the gas flow in the second air hole 33 can be avoided as much as possible.

More specifically, the inner diameter of the gas outlet passage gradually increases in a direction away from the gas inlet cover 122 and toward the chamber. That is, the gas outlet passage is horn-shaped, and by the above arrangement, the adhesion area of the gas per unit area of the ejection chamber cover 12 and the inlet space 13 can be made larger, which contributes to improvement of uniformity of thin film deposition.

In one embodiment, the chamber lid 12 further includes a plurality of seals (not shown), each seal being disposed between the intake cover 122 and the flow uniformity plate 121, and each seal surrounding a corresponding flow channel 32. When different gases in the gas source assembly enter the corresponding flow channels 32 through the corresponding gas inlet holes 31, the sealing member can prevent the gases from flowing to two sides of the flow channels 32 so as to ensure that the gases flow along the corresponding flow channels 32. This can improve the sealing performance of the flow path 32, and prevent the gas in the different flow paths 32 from leaking and mixing.

In one embodiment, the inlet cap 122 or the flow-homogenizing plate 121 is provided with grooves 1211, the grooves 1211 are provided around the flow channel 32, and the seals are mounted to the grooves 1211. The grooves 1211 can act as a stop for the seal, reducing the risk of the seal moving to affect the sealing effect.

In one embodiment, the chamber bottom 111 is provided with a pipe connection hole (not shown) which communicates with the receiving space 13. The thin film deposition apparatus 100 further includes a tail assembly 80, the tail assembly 80 including a tail gas processor (not shown) installed at the periphery of the reaction chamber 10 and a discharge pipe (not shown) having one end connected to the tail gas processor and the other end connected to the pipe connection hole.

It will be appreciated that, after the gas in the accommodating space 13 chemically reacts with the processing object, the residual gas and the generated exhaust gas flow into the exhaust gas treatment device along the exhaust pipe, and then the exhaust gas treatment device performs the purification treatment of the residual gas and the generated exhaust gas. Thus, the environmental pollution can be reduced, and the safety and stability of the film forming process can be ensured.

In one embodiment, as shown in fig. 8 and 9, the second transmission member 62 is provided with a relief port 621, and the relief port 621 is configured to relieve the discharge duct when the discharge duct is connected to the duct connection hole. It will be appreciated that when the discharge conduit needs to be connected to the conduit connection hole, the relief port 621 on the second transmission member 62 is configured to clear the discharge conduit to ensure that the discharge conduit is smoothly connected to the conduit connection hole without interference from the second transmission member 62.

In one embodiment, as shown in FIG. 1, the thin film deposition apparatus 100 further includes a vacuum pumping assembly 90, and the vacuum pumping assembly 90 includes a vacuum pipe (not shown) and a vacuum generator (not shown). A vacuum generator is a device for creating a vacuum environment and generally includes components such as a vacuum pump, vacuum valve, vacuum gauge, etc. The vacuum generator is installed at one side of the exhaust gas treatment device and can be communicated with the accommodating space 13 through the vacuumizing tube. The evacuation tube is a pipe with one end communicating with the accommodation space 13 and the other end connected to the vacuum generator. By evacuating the tube, the vacuum generator can evacuate the gas in the accommodating space 13, thereby forming a vacuum state in the reaction chamber 10.

It should be noted that, by the vacuum pumping assembly 90, the thin film deposition apparatus 100 can reduce the pressure in the reaction chamber 10 to a desired vacuum level by pumping the gas in the accommodating space 13 during the thin film deposition process, thereby helping to provide a more stable reaction environment, reducing the influence of gas interference and impurities, and improving the quality and performance of thin film deposition.

In one embodiment, the thin film deposition apparatus 100 further includes a plasma generating assembly (not shown) disposed at the periphery of the accommodating space 13 and in communication with the accommodating space 13. The plasma generating assembly is configured to deliver plasma to the receiving space 13.

The plasma is a high-energy gas composed of charged ions and electrons, and has high reactivity. During the thin film deposition process, the reactive gas may be activated by supplying plasma to the accommodating space 13, promoting the deposition and growth of the thin film. In addition, the plasma can provide additional energy and excitation reaction, thereby improving the compactness, uniformity and adhesiveness of the film.

The foregoing is merely a specific embodiment of the present application, but the protection scope of the present application is not limited thereto, and any changes or substitutions within the technical scope of the present disclosure should be covered in the scope of the disclosure of the present application.

Claims (10)

1. A thin film deposition apparatus for processing a processing object, the thin film deposition apparatus comprising:

a reaction chamber including a chamber body and a chamber cover configured to be movable with respect to an opening of the chamber body, the chamber body and the chamber cover being capable of forming an accommodation space for accommodating the processing object when mated;

the first air inlet assembly is positioned in the accommodating space and surrounds the inner side wall of the cavity, and a plurality of first air holes are formed in the part of the first air inlet assembly positioned in the cavity at intervals along the inner side wall of the cavity;

the second air inlet assembly is positioned in the accommodating space, and a plurality of second air holes are formed in the part of the second air inlet assembly positioned in the cavity;

the air source assembly is connected to the first air inlet assembly and the second air inlet assembly, the air source assembly is configured to store first air and second air, the first air is released from the inner side wall of the cavity to the center direction of the accommodating space through a plurality of first air holes, the second air is released from the cavity cover to the bottom direction of the cavity through the second air holes, and the first air is gas with different components.

2. The thin film deposition apparatus according to claim 1, wherein the chamber includes a chamber bottom and a chamber wall, one end of the chamber wall is hermetically connected to the chamber bottom, and the chamber wall and the chamber bottom enclose a chamber;

a plurality of special air pipes are arranged on the inner side of the cavity wall in a surrounding mode, each special air pipe is provided with a plurality of first air holes, and the first air holes are communicated with the accommodating space; the outside of chamber wall is provided with the air inlet joint, the one end of air inlet joint wears to locate the chamber wall, and with special trachea is linked together, the other end of air inlet joint is connected with the air source subassembly, special trachea the air inlet joint and first air vent jointly forms at least part component of first air inlet subassembly.

3. The thin film deposition apparatus according to claim 2, further comprising a frame and a first driving mechanism, wherein the first driving mechanism comprises a first driving member and a first transmission member, the first driving member is installed in the frame, one end of the first transmission member is connected with an output end of the first driving member, and the other end of the first transmission member is penetrated through the frame and connected with the cavity cover; the first driving piece is configured to drive the cavity cover to move towards or away from the cavity through the first transmission piece.

4. The thin film deposition apparatus according to claim 3, further comprising a stage mounted to the accommodation space, the stage configured to support the processing object, and a second driving mechanism;

the second driving mechanism comprises a second driving piece and a second transmission piece, the second driving piece is arranged outside the accommodating space, one end of the second transmission piece is connected with the output end of the second driving piece, and the other end of the second transmission piece penetrates through the cavity bottom to be connected with the bearing table; the second driving piece is configured to drive the bearing table to move towards or away from the cavity cover through the second driving piece.

5. The thin film deposition apparatus according to claim 4, wherein the second driving member, the first transmission member, and the first driving member are sequentially arranged in a first direction; the first direction is the direction in which the cavity cover moves towards the cavity; the extending direction of the second driving piece, the extending direction of the first transmission piece and the extending direction of the first driving piece are mutually staggered.

6. The thin film deposition apparatus according to claim 3, wherein the chamber cover comprises an air intake cover provided with a plurality of air intake holes and a flow-homogenizing plate, and the air intake cover is connected with the first transmission member; the uniform flow plate is connected with the air inlet cover, a plurality of mutually independent flow passages are formed between the uniform flow plate and the air inlet cover, each flow passage corresponds to one air inlet hole, and the flow passages are communicated with the air inlet holes;

and each flow channel is provided with a plurality of second air holes, the second air holes are communicated with the flow channels and the accommodating space, and the air inlet holes, the flow channels and the second air holes jointly form at least part of elements of the second air inlet assembly.

7. The thin film deposition apparatus according to claim 4, wherein the chamber bottom is provided with a pipe connection hole, the pipe connection hole being in communication with the accommodation space; the thin film deposition equipment further comprises a tail row assembly, the tail row assembly comprises a tail gas processor and a discharge pipeline, the tail gas processor is mounted on the frame, one end of the discharge pipeline is connected with the tail gas processor, and the other end of the discharge pipeline is communicated with the pipeline connecting hole.

8. The thin film deposition apparatus according to claim 7, wherein the second transmission member is provided with a relief port configured to relieve the discharge duct when the discharge duct is connected to the duct connection hole.

9. The thin film deposition apparatus according to claim 7, further comprising a vacuum pumping assembly including a vacuum pumping pipe and a vacuum generator, the vacuum generator being installed at one side of the exhaust gas treatment device, one end of the vacuum pumping pipe being in communication with the accommodation space, the other end of the vacuum pumping pipe being connected to the vacuum generator; the vacuum generator is configured to draw the gas in the accommodating space through the evacuation tube to place the reaction chamber in a vacuum state.

10. The thin film deposition apparatus according to claim 1, further comprising a plasma generating assembly disposed at a periphery of the accommodating space and communicating with the accommodating space; the plasma generating assembly is configured to deliver plasma to the receiving space.