CN1177335C - Process for preparing diluted magnetic AIN-base semiconductor by ion implantation method - Google Patents
Process for preparing diluted magnetic AIN-base semiconductor by ion implantation methodInfo
- Publication number
- CN1177335C CN1177335C CNB021130884A CN02113088A CN1177335C CN 1177335 C CN1177335 C CN 1177335C CN B021130884 A CNB021130884 A CN B021130884A CN 02113088 A CN02113088 A CN 02113088A CN 1177335 C CN1177335 C CN 1177335C
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- CN
- China
- Prior art keywords
- magnetic
- ion
- aln
- semiconductor
- injected
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005468 ion implantation Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 33
- 229910052742 iron Inorganic materials 0.000 claims abstract description 12
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 11
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 239000012895 dilution Substances 0.000 claims description 13
- 238000010790 dilution Methods 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 abstract description 35
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 5
- 230000012010 growth Effects 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 230000005307 ferromagnetism Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- -1 Mn and Fe Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000005418 spin wave Effects 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The present invention relates to a method for preparing AlN-based diluted magnetic semiconductor films by an ion-implantation method. Magnetic ions, such as Mn, Fe, Co or Ni, etc., are injected in an AlN semiconductor film; the magnetic ions are injected at the energy of 150 keV to 250 keV by an ion-implantation method; then, annealing treatment is carried out under the condition of NH3 atmosphere at the temperature of 850 DEG C to 900 DEG C; a DMS ion-implantation method is used for preparing a magnetic semiconductor by injecting the magnetic ions, such as Fe, Mn, Co or Ni, etc., in an AlN-based semiconductor material through ion implantation. Compared with other directly growing methods, the method of the present invention can realize higher ion doping concentration. Consequently, magnetic semiconductor materials with high Curie temperature can be prepared.
Description
One, technical field
The present invention relates to a kind of method of utilizing ion implantation to prepare AlN base dilution magnetic semiconductor film material.
Two, technical background
After the transistor invention, all of semiconductor electronic technology are used the exploration that all is based on electron charge.In 20 actual latter stages, a large amount of research makes great efforts to begin to concentrate on the application of electron spin.The device of quantum nature (learning from copper plate) that utilizes the electron spin wave function is in opto-electronic conversion, and the hypersensitization magnetic field sensor is especially for obtaining a very large progress based on the logic of quantum effect and the research aspect of memory device of supercomputing.But,, directly electronic material (semiconductor) and rotation material (ferromagnetic metal) fusion are got up to produce a lot of problems because the essence (as crystal structure, key, physics and chemical property) of material is different.Another solution is to use dilution magnetic semiconductor (semiconductor of heavy doping magnetic ion), can be directly and the conventional semiconductor device integrated.
(Diluted Magnetic Semiconductor is a doped magnetic ion in non magnetic semiconductor (as IV-VI family, II-VI family or III-V family) DMS) to the dilution magnetic semiconductor material, utilizes carrier control technique to produce the new function material of magnetic.Can change the size of magnetic by carrier density in the change dilution semi-conducting material.Because there is exchange interaction in magnetic ion local magnetic moment with the charged son spin of energy, therefore by changing photoelectricity, magneto-optic, light absorption and the transport property that magnetic impurity concentration and external magnetic field intensity can effectively be controlled them.It has used electron charge and electron spin character simultaneously, thus the DMS device can be directly and the conventional semiconductor device integrated, have important use aspect integrated etc. the new device of light, electricity, magnetic function.
II-VI family dilution magnetic semiconductor material has been studied widely.But the dilution semiconductor that is based on III-V family is not also at large studied.At present generally (In, Mn) As and (Ga, Mn) Curie temperature of As (Tc) all very low (35 and 110K) of research.Consider from angle of practical application, seek and have more that the material of high-curie temperature presses for.Theoretical work shows that wide band gap semiconducter such as GaN and ZnO may be that room temperature or higher temperature can realize that charge carrier causes ferromagnetic suitable representative materials down.Because gallium nitride and associated materials thereof are being the most promising materials aspect the short-wave band blue light electronics; And Mn
xGa
1-xN belongs to the III-V family dilution magnetic semiconductor material with unique magnetic character.Therefore, the DMS semi-conducting material research based on the III nitride base has obtained enough attention in recent years.
Research shows that relatively low Mn concentration enough makes corresponding Mn
xGa
1-xN produces ferromagnetism.AlN is the material similar with GaN, and lattice constant is very approaching, therefore is expected to obtain the dilution magnetic semiconductor material of AlN base.And the realization of AlN base dilution magnetic semiconductor is expected to the application extension of magnetic, light, the electric integrated device scope to whole visible light.
The main difficulty that the DMS of III-V family semi-conducting material faces is also not have the direct epitaxial growth of suitable growing method at present.Because magnetic ion lower solubility in the DMS of III-V family material, very difficult acquisition does not form the epitaxial material of second phase.Ion implantation process is that a different magnetic ion of introducing enters the very easy method in the different main materials, compare with other direct growth methods, can realize higher ion doping concentration, be easy to be used to prepare spin polarized current injection device structure as the contact zone, constituency.So before not have at present to find preferably directly the DMS semi-conducting material of epitaxial growth III-V family, the ion injection is a gratifying alternative method.Inject by ion, magnetic ions such as Fe, Mn and Ni are injected III-V family semi-conducting material, can be used for studying ferromagnetic origin of DMS material and essence, prepare high-quality magnetic semiconductor material.
Three, summary of the invention
The present invention seeks to, adopt ion implantation, magnetic ion (as Mn, Fe, Co or Ni etc.) is injected the AlN semiconductive thin film, prepare the magnetic semiconductor film material AlN:M that has under the room temperature.M represents the ferromagnetism ion, as Mn, Fe, Co or Ni etc.
Technical solution of the present invention is:
The ion implantation of DMS is to inject by ion, and magnetic ions such as Fe, Mn, Co or Ni are injected the AlN base semiconductor material, can be used for studying ferromagnetic origin of DMS material and essence, prepares high-quality magnetic semiconductor material.
In the present invention, adopt ion implantation, magnetic ion Mn is injected AlN base semiconductor film, prepare the ferromagnetic semiconductor thin-film material AlN:Mn that has than high-curie temperature.The present invention injects the AlN semiconductive thin film with magnetic ion such as Mn and Fe, Co or Ni etc., and promptly the method for injecting with ion is injected magnetic ion with the energy of 150～250keV, then at 850-900 ℃, NH
3Annealing in process under the atmospheric condition.Similarly, we have also obtained the AlN base magnetic semiconductor material of other ferromagnetism ions of doping (as Fe, Co or Ni etc.) with the method for ion injection.
Mechanism of the present invention and characteristics are:
The DMS ion implantation is to inject by ion, and magnetic ions such as Fe, Mn, Co or Ni are injected the method that the AlN base semiconductor material prepares magnetic semiconductor.Compare with other direct growth methods, can realize higher ion doping concentration, thereby can prepare the magnetic semiconductor material of high-curie temperature.As AlN:Mn, the injection of energetic ion is upset the lattice of surfaces A lN layer before the annealing, and suitably after the annealing in process, Mn is activated, and has replaced the position of Al in the AlN lattice, and AlN:Mn shows preferable quality.
Four, description of drawings
Fig. 1 is the M-H curve of AlN:Mn film under the room temperature
Five, embodiment
This method mainly comprises step:
1, at first obtains high-quality AlN film sample, can adopt the AlN film of method growths such as gas phase epitaxy of metal organic compound, molecular beam epitaxy or hydride gas-phase epitaxy.The AlN sample that is exemplified among the present invention all is to grow on the Si substrate with the method for gas phase epitaxy of metal organic compound (MOVPE).
2, with ion implantation device, the method for injecting with ion is injected magnetic ion Mn with the energy of 150～250keV.The CONCENTRATION DISTRIBUTION peak value of its Mn is at 2000 places; Every cubic centimetre of implantation concentration is 7 * 10
20～2 * 10
22, obtain different implantation concentrations by control ion current density and injection length.
3, at 850-900 ℃, NH
3Annealing in process under the atmospheric condition is about 1 hour time.
4,, also can prepare the AlN base magnetic semiconductor material of magnetic ions such as containing Fe, Co or Ni according to above-mentioned steps.Fe, Co are identical with the Mn ion implanting conditions with injection condition with the isoionic implantation concentration scope of Ni.
The method of utilizing ion to inject, we have successfully obtained the AlN base dilution magnetic semiconductor material under the room temperature.As AlN:Mn, its magnetic property as shown in Figure 1.The X-ray diffraction structural analysis shows that after the Mn ion was injected into AlN and annealed processing, the Mn ion had replaced the position of Al in the AlN lattice substantially, rather than N position or interstitial type.Mn occupies not too big variation of lattice constant behind the Al position.
Claims (2)
1, ion implantation prepares the method for AlN base dilution magnetic semiconductor film material, it is characterized in that magnetic ion Mn, Fe, Co or Ni are injected the AlN semiconductive thin film, promptly the method for injecting with ion is injected magnetic ion with the energy of 150～250keV, then at 850-900 ℃, NH
3Annealing in process under the atmospheric condition.
2, the method that is prepared AlN base dilution magnetic semiconductor film material by the described ion implantation of claim 1, every cubic centimetre of the implantation concentration that it is characterized in that injecting magnetic ion is 7 * 10
20～2 * 10
22
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021130884A CN1177335C (en) | 2002-05-31 | 2002-05-31 | Process for preparing diluted magnetic AIN-base semiconductor by ion implantation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021130884A CN1177335C (en) | 2002-05-31 | 2002-05-31 | Process for preparing diluted magnetic AIN-base semiconductor by ion implantation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1383162A CN1383162A (en) | 2002-12-04 |
| CN1177335C true CN1177335C (en) | 2004-11-24 |
Family
ID=4742433
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021130884A Expired - Fee Related CN1177335C (en) | 2002-05-31 | 2002-05-31 | Process for preparing diluted magnetic AIN-base semiconductor by ion implantation method |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101887793A (en) * | 2010-06-29 | 2010-11-17 | 华南理工大学 | Method for preparing copper-doped aluminum nitride base diluted magnetic semiconductor nano rods |
| CN102477537B (en) * | 2010-11-26 | 2014-08-20 | 鸿富锦精密工业（深圳）有限公司 | Casing and preparation method thereof |
| CN104119887B (en) * | 2014-06-30 | 2016-02-24 | 苏州科技学院 | A kind of inject rare earth element white light emission aluminium nitride material, preparation method and application |
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2002
- 2002-05-31 CN CNB021130884A patent/CN1177335C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1383162A (en) | 2002-12-04 |
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