CN117713738A - Resonator with function of suppressing hetero-mode ripple, filter and forming method - Google Patents
Resonator with function of suppressing hetero-mode ripple, filter and forming method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 52
- 238000006243 chemical reaction Methods 0.000 claims abstract description 38
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 27
- 239000000376 reactant Substances 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 53
- 239000010408 film Substances 0.000 description 49
- 239000000463 material Substances 0.000 description 10
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000002131 composite material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910003327 LiNbO3 Inorganic materials 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910012463 LiTaO3 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000003411 electrode reaction Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a resonator with a function of inhibiting heteromorphic ripple, a filter and a forming method, wherein the resonator comprises an upper interdigital area and a lower interdigital area, the upper interdigital area and the lower interdigital area respectively comprise a plurality of interdigital bars arranged side by side at intervals and a bus bar area which is arranged at one end of each interdigital bar and communicated with all interdigital bars, the plurality of interdigital bars of the upper interdigital area and the plurality of interdigital bars of the lower interdigital area are arranged alternately, a functional area D is respectively divided in the upper interdigital area and the lower interdigital area, and a metal compound film layer obtained based on chemical reaction is arranged on the functional area D; the resonator, the filter and the forming method with the function of suppressing the mixed mode ripple achieve the effect of optimizing and attenuating the mixed mode propagation by changing the reflection characteristic of the functional area.
Description
Technical Field
The invention relates to the technical field of SAW resonators/filters, in particular to a resonator with a function of suppressing a hybrid mode ripple, a filter and a forming method.
Background
With the advancement of SAW resonator/filter technology, resonators/filters with high Q, high isolation, low loss performance have been widely studied, particularly based on composite film substrates (bond substrate/multilayer thin film substrate) and LiNbO 3 Filter devices fabricated from piezoelectric thin films are widely used. However based on a composite film substrate and LiNbO 3 The products realized under the piezoelectric film manufacturing technology can cause serious heteromodal ripple.
As shown in fig. 14, in the comparative form of the product of the prior art, the hetero-mode ripple shown by arrows R1 to R5 appears between the resonance frequency and the antiresonance frequency. Disadvantages: the semiconductor technology is based on a SAW surface acoustic wave product of a product realized under a composite film substrate and LiNbO3 piezoelectric film manufacturing technology, and the sound wave propagates in a typical interdigital structure and has stronger hetero-mode ripples (R1-R5 in FIG. 14), so that the filter is uneven in band, unstable in performance and large in insertion loss fluctuation.
Disclosure of Invention
Based on the technical problems in the background technology, the invention provides a resonator, a filter and a forming method with the function of suppressing the heteromodal ripple, and the function of optimizing the heteromodal propagation in the attenuation passband is achieved by changing the reflection characteristic of a functional area.
The invention provides a resonator with a function of inhibiting heteromorphic ripples, which is characterized in that a wafer substrate and an interdigital metal layer are sequentially arranged from bottom to top, the interdigital metal layer comprises an upper interdigital region and a lower interdigital region, each of the upper interdigital region and the lower interdigital region comprises a plurality of interdigital strips arranged side by side at intervals and a bus bar region which is arranged at one end of each interdigital strip and is communicated with all the interdigital strips, the plurality of interdigital strips of the upper interdigital region and the plurality of interdigital strips of the lower interdigital region are arranged alternately, a functional region D is respectively divided in each of the upper interdigital region and the lower interdigital region, and the upper parts of the interdigital strips in the functional region D are subjected to chemical reaction to obtain a covered metal compound film layer.
Further, the functional area D extends along the arrangement direction of the interdigital strips, and covers all or part of the end parts of the interdigital strips in the upper interdigital area or the lower interdigital area.
Further, the width of the functional region D is 0.3λ -0.6λ, the thickness of the metal compound film layer is 1% λ -3λ, λ represents the wavelength of the acoustic wave propagating in the piezoelectric crystal, and the density of the metal compound in the metal compound film layer needs to be greater than that of the interdigital metal.
A filter having a function of suppressing a hybrid ripple includes a housing and a resonator provided in the housing, the resonator being the resonator as described above.
Further, the interdigital metal layer is arranged on the wafer substrate, the upper interdigital area and the lower interdigital area are respectively divided into a functional area C, the upper part of the interdigital strip in the functional area C is subjected to chemical reaction to obtain a covered metal compound film layer, and the upper part of the wafer substrate in the functional area C is subjected to substrate etching to obtain an etching area.
Further, the functional area C extends along the arrangement direction of the interdigital bars, the etching area is disposed at a gap position where the interdigital bars in the upper interdigital area and the interdigital bars in the lower interdigital area are opposite, and the functional area C does not cover the end parts of the interdigital bars.
A method for forming a resonator with a function of suppressing a hybrid mode ripple includes the steps of:
performing functional area division on a structure formed by the wafer substrate and the interdigital metal layer to obtain a functional area C and a functional area D;
injecting a gas/liquid/solid reactant above the interdigital metal layer by ion implantation, etching sputtering reaction and reactive ion beam polishing technology;
the interdigital strips in the interdigital metal layer in the functional area D are subjected to chemical reaction with the injected reactant to obtain a metal compound, and the obtained metal compound is covered on the interdigital strips subjected to chemical reaction to form a metal compound film layer;
and stopping injecting reactants when the thickness of the metal compound film layer is 1-3% lambda, and finishing the arrangement of the metal compound film layer.
Further, the interdigital bars positioned in the functional area C are subjected to chemical reaction with the injected reactant to obtain a metal compound, and the obtained metal compound is covered on the interdigital bars subjected to chemical reaction to form a metal compound film layer;
and the wafer substrate in the functional area C is subjected to substrate etching through an etching sputtering reaction to obtain an etching area, and the etching area is arranged at a gap position where the interdigital strips in the upper interdigital area are opposite to the interdigital strips in the lower interdigital area.
The resonator, the filter and the forming method with the function of suppressing the heteromodal ripple have the advantages that: the resonator, the filter and the forming method with the function of inhibiting the heteromorphic ripple provided by the structure of the invention are used for carrying out chemical reaction on the divided functional area D so as to obtain the metal compound film layer, wherein the density of the metal compound in the metal compound film layer is required to be larger than that of the interdigital strip metal, so that the reflection characteristic of the functional area is changed by changing the material characteristic of the metal film in the specific area, the effect of optimizing and attenuating the heteromorphic ripple propagation is achieved, the filter is flat in a band, the performance is stable, the insertion loss fluctuation is small, the design of various interdigital electrode structures can be completed, the process flow is simple, and the production cost is saved.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic illustration of a chemical reaction of a reactant with an interdigital strip of an interdigital metal layer;
FIG. 3 is a schematic top view of a resonator;
FIG. 4 is a schematic structural diagram of a metal compound forming an IDT electrode interdigital top region after a functional region D is subjected to a chemical reaction treatment;
FIG. 5 is a schematic structural view of a multilayer film substrate;
FIG. 6 is a schematic structural diagram of a bonded substrate;
FIG. 7 is a schematic view of the structure of a LiNbO3 piezoelectric substrate;
FIG. 8 is a schematic diagram of the structure of functional areas C and D after treatment;
FIG. 9 is a top view of FIG. 8;
FIG. 10 is a schematic view of the structure of the multilayer thin film substrate after etching in functional region C;
FIG. 11 is a schematic diagram of the structure of the bonded substrate after etching in functional region C;
fig. 12 is a schematic structural diagram of a LiNbO3 piezoelectric substrate after etching in the functional area C;
FIG. 13 is a schematic view of the acoustic wave mode of the resonator of the present embodiment;
FIG. 14 is a schematic view of a conventional acoustic wave pattern with a hybrid mode ripple;
FIG. 15 is a schematic structural view of a metal compound film layer based on chemical reaction to be covered on the functional region E;
wherein, the electrode comprises a 1-upper interdigital area, a 2-lower interdigital area, a 3-interdigital bar, a 4-bus bar area, a 5-metal compound film layer, a 6-wafer substrate, a 7-interdigital metal layer, an 8-etching area, a 61-substrate, a 62-piezoelectric layer, a 63-high-resistance film, a 64-functional layer and a 65-LiNbO 3 A piezoelectric layer.
Detailed Description
In the following detailed description of the present invention, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit or scope of the invention, which is therefore not limited to the specific embodiments disclosed below.
As shown in fig. 1 to 15, the present invention provides an interdigital structure, which includes an upper interdigital region 1 and a lower interdigital region 2, wherein each of the upper interdigital region 1 and the lower interdigital region 2 includes a plurality of interdigital bars 3 arranged side by side at intervals and a bus bar region 4 arranged at one end of the interdigital bars 3 and communicated with all the interdigital bars 3, the plurality of interdigital bars 3 of the upper interdigital region 1 and the plurality of interdigital bars 3 of the lower interdigital region 2 are arranged alternately, a functional region D is divided into each of the upper interdigital region 1 and the lower interdigital region 2, and the upper parts of the interdigital bars 3 in the functional region D obtain a covered metal compound film layer 5 based on chemical reaction.
Compared with the prior art, as shown in fig. 14, the heteromodal ripple shown by arrows R1-R5 appears between the resonant frequency and the antiresonant frequency, and it is obvious from the graph that the prior art has serious heteromodal ripple, in this embodiment, the functional area is divided by the upper interdigital area 1 and the lower interdigital area 2, and chemical reaction is performed on the divided functional area D, so as to obtain a metal compound film layer 5, the density of the metal compound in the metal compound film layer 5 needs to be greater than that of the interdigital strip 3, so that the acoustic wave diagram shown in fig. 13 is obtained by changing the material characteristics of the metal film in the specific area, and the optimal attenuation heteromodal propagation effect is achieved, so that the filter has internal flatness, stable performance and small insertion loss fluctuation, and the design of various interdigital electrode structures can be completed.
According to the formula: the propagation velocity v=λ×f0 of the medium, that is, the product of the wave velocity V and the vibration frequency f0, shows that, for the acoustic wave propagating in the piezoelectric crystal using the specified tangential direction, (the tangential direction is the same, the propagation velocity is the same), the wavelength due to the frequency is different at different device operating frequencies. And the design of the filter device is different according to different operating frequency requirements, and different lambda is used. Therefore, the material parameters are directly proportional to lambda, i.e. inversely proportional to the operating frequency.
Specifically, as shown in fig. 3 and 4, the functional area D (including the functional area D1 and the functional area D2) is an IDT electrode interdigital reaction area, and the electrode film layer material of the reaction area is processed into a metal compound by a chemical reaction technology, where the density of the metal compound film layer needs to be greater than that of the metal electrode film layer of the interdigital strip 3 and greater than that of other metal electrode film layers.
In this embodiment, the functional area D is extended along the arrangement direction of the interdigital strips 3, and covers all or part of the end parts of the interdigital strips 3 in the upper interdigital area 1 or the lower interdigital area 2; since the upper interdigital region 1 or the lower interdigital region 2 are oppositely arranged at intervals in a crossing manner, the functional region D comprises a functional region D1 and a functional region D2, wherein the functional region D1 is positioned at the end part of the interdigital strip 3 in the lower interdigital region 2 and is arranged in a covering manner with the end part of the interdigital strip 3, the functional region D2 is positioned at the end part of the interdigital strip 3 in the upper interdigital region 1 and is arranged in a covering manner with the end part of the interdigital strip 3, and the functional region E is an IDT electrode interdigital whether the functional region D1 or the functional region D2 is arranged in a crossing manner with the interdigital strip 3 in the upper interdigital region 1 or the lower interdigital region 2, so that the functional region D1 and the interdigital strip 3 in the lower interdigital region 2 are partially covered.
The film thickness of the interdigital strip 3 is preferably (5% lambda-12% lambda) (the actual process is about 0.01 um-0.85 um); the film thickness of the metal compound film layer 5 is preferably (1% lambda to 3% lambda) (actual process: about 0.01um to 0.06 um); the width of the functional region D (metal compound region) is preferably (0.3λ -0.6λ).
In this embodiment, a resonator with a function of suppressing the ripple of the hybrid mode is disclosed, which includes a wafer substrate 6 and an interdigital metal layer 7 sequentially disposed from bottom to top, where the interdigital metal layer 7 has the above-mentioned interdigital structure.
After the resonator is formed based on the interdigital metal layer 7, the interdigital metal layer 7 is arranged on the wafer substrate 6, and functional area division is performed on a structure formed by the interdigital metal layer 7 and the wafer substrate 6, wherein the functional area is divided into a functional area A, a functional area B, a functional area C, a functional area D and a functional area E, the functional area A corresponds to a bus bar area 4, the functional area B corresponds to a virtual finger electrode, the functional area C corresponds to GAP, the functional area D corresponds to an IDT electrode reaction area, and the functional area E corresponds to IDT electrode interdigital.
When the chemical reaction is performed in the functional region D, the corresponding chemical reaction is also performed in the functional region C, specifically: the upper part of the interdigital strip 3 in the functional area C is subjected to substrate etching to obtain an etching area 8 based on a covered metal compound film layer 5 obtained by chemical reaction, the functional area C is arranged along the arrangement direction of the interdigital strip 3, the etching area 8 is arranged at the opposite gap position of the interdigital strip 3 in the upper interdigital area 1 and the interdigital strip 3 in the lower interdigital area 2, and the end part of the interdigital strip 3 is not covered by the functional area C.
In the present embodiment, the wafer substrate 6 is preferably a composite substrate and LiNbO 3 Piezoelectric substrate, wherein compositeThe substrates are preferably a bonded substrate in which the wafer substrate 6 is composed of a substrate 61 and a piezoelectric layer 62, the piezoelectric layer 62 being provided on the substrate 61; in the multilayer thin film substrate, the wafer substrate 6 includes a substrate 61, a high-resistance film 63, a functional layer 64, and a piezoelectric layer 62, which are disposed in this order from bottom to top; in LiNbO 3 In the piezoelectric substrate, the wafer substrate 6 includes LiNbO 3 A piezoelectric layer 65.
The etched region 8 at the functional region C is formed on the piezoelectric layer 62, and in appearance, the piezoelectric layer 62 is etched into an uneven structure, so that the reflection characteristic of the functional region can be effectively changed, and the effect of optimizing attenuation of propagation of a hybrid mode is achieved.
For the piezoelectric layer 62, the elastic wave propagation directionThe piezoelectric single crystal is preferably (35-60) degrees Y-X cut LiTaO3, and the thickness is preferably (0.2λ -0.5λ100 nm-4000 nm), defined by Euler angles (Φ, θ, ψ).
The substrate 61 preferably has a resistivity of 100 Ω cm or more, more preferably 1000 Ω cm or more, and still more preferably 4000 Ω cm or more, as compared with high-resistance silicon (Si). Preferably the crystal phase is (001)/(100)/(010), preferably the crystal plane is (100)/(110)/(111), and the thickness is more than 100um; for the high-resistance film 63, polysilicon (Poly-Si) is preferable, and the thickness (100 nm to 1000 nm); for the functional layer 64, siO is preferred 2 The thickness is (0.2λ -0.6λ100 nm-4500 nm).
For LiNbO 3 Piezoelectric substrates, preferably Euler angles #LiNbO in the expression 3 Is +.>Piezoelectric material of ψ=0±10°, θ=38±10°; or->Piezoelectric material of ψ=0±10°, θ= -85±15°; or->ψ=0±10°, θ=131±15° or +.>And the thickness of the piezoelectric material with theta= -90+/-10 degrees and phi= -90+/-10 degrees is larger than 100um.
As an embodiment
Piezoelectric film: Y-X cut LiTaO3 film with cut angle of 42 degrees;
IDT electrode interdigital (functional region E) crossing width=20λ, dummy electrode is 2λ single-sided, gap (functional regions C1 and C2) is 1um. λ=2μm, λ being a wavelength determined by the electrode finger pitch; duty ratio in IDT electrode finger (functional region E) =0.3 to 0.7, IDT electrode finger (functional region E) film thickness=8% λ, metal compound film thickness=2% λ, liTaO 3 Film thickness=0.2λ to 0.5λ, and film thickness=0.2λ to 0.6λ of the silicon dioxide film constituting the bonding material layer.
In addition, the embodiment discloses a filter with the function of suppressing the mixed mode ripple in the passband, which comprises a shell and a resonator arranged in the shell, wherein the resonator is the resonator.
In this embodiment, a method for forming a resonator having a function of suppressing a hetero-mode ripple is disclosed, comprising the steps of:
s1, performing functional area division on a structure formed by a wafer substrate 6 and an interdigital metal layer 7 to obtain a functional area C and a functional area D;
s2, injecting a gas/liquid/solid reactant above the interdigital metal layer 7 through ion implantation, etching sputtering reaction and a reactive ion beam polishing technology;
wherein the gas may be O 2 /CF 4 /NF 3 /Ar/N 2 /CHF 3 Etc. the liquid may be HF/HCl/H 2 SO 4 /CeO 2 Etc., the solid may be SiO 2 Etc. The injection flow rate of the reactants can influence the rate of chemical reaction, and the reaction rate of the reactants can be controlled by controlling the injection flow rate of the reactants during specific use。
S3, carrying out chemical reaction on the interdigital strips 3 in the interdigital metal layer 7 in the functional area D and the injected reactant to obtain a metal compound, and covering the obtained metal compound on the interdigital strips 3 subjected to the chemical reaction to form a metal compound film layer 5; the interdigital strip 3 positioned in the functional area C and the injected reactant are subjected to chemical reaction to obtain a metal compound, and the obtained metal compound is covered on the interdigital strip 3 subjected to chemical reaction to form a metal compound film layer 5;
the wafer substrate 6 in the functional area C is subjected to substrate etching through an etching sputtering reaction to obtain an etching area 8, and the etching area 8 is arranged at a gap position where the interdigital bars 3 in the upper interdigital area 1 and the interdigital bars 3 in the lower interdigital area 2 are opposite;
and S4, stopping injecting reactants when the thickness of the metal compound film layer 5 is 1-3% lambda, and finishing the arrangement of the metal compound film layer 5.
Through steps S1 to S4, the specific structure is processed by adopting a chemical reaction mode, the performance of the metal film material is changed, the reflection characteristic of the functional area is changed, the effect of suppressing the propagation of the hybrid mode is achieved, the curve result shown in fig. 13 is obtained, compared with the existing resonator with the hybrid mode ripple shown in fig. 14, the embodiment has higher suppressing effect on the hybrid mode ripple, and compared with the prior art, the device is optimized in various structures, the performance is improved obviously, the process flow is simple, and the cost is low.
In addition, the functional areas C (including C1 and C2) and the functional areas D (including D1 and D2) in the present embodiment are not limited to the above-described ranges, and the metal compound film layer 5 obtained by the chemical reaction between the reactant and the interdigital strip 3 may also occur in the functional area E, for example, as shown in fig. 15, by providing a U-shaped divided functional area E, in which the reactant and the interdigital strip 3 react to obtain the metal compound film layer 5, and by changing the material characteristics of the metal film in the reactive area, the reflection characteristics of the functional area in the reactive area are changed, thereby achieving the effect of optimizing attenuation of the propagation of the hybrid mode.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (8)
1. The resonator with the function of inhibiting the heteromorphic ripple is characterized in that a wafer substrate (6) and an interdigital metal layer (7) are sequentially arranged from bottom to top, the interdigital metal layer (7) comprises an upper interdigital area (1) and a lower interdigital area (2), the upper interdigital area (1) and the lower interdigital area (2) comprise a plurality of interdigital strips (3) which are arranged side by side at intervals and are communicated with all interdigital strips (3) which are arranged at one end of the interdigital strip (3), the interdigital strips (3) of the upper interdigital area (1) and the interdigital strips (3) of the lower interdigital area (2) are arranged alternately, a functional area D is divided into the upper interdigital area (1) and the lower interdigital area (2), and a covered metal compound film layer (5) is obtained on the upper part of the interdigital strips (3) in the functional area D based on chemical reaction.
2. Resonator with a function of suppressing the ripple of the hetero-mode according to claim 1, characterized in that the functional region D is arranged extending along the arrangement direction of the interdigital bars (3), and the functional region D covers all or part of the end portions of the interdigital bars (3) in the upper interdigital region (1) or the lower interdigital region (2).
3. The resonator with the function of suppressing the heteromodal ripple as set forth in claim 1, characterized in that the width of the functional region D is 0.3λ -0.6λ, the thickness of the metal compound film layer (5) is 1% λ -3λ, λ represents the wavelength of the propagating acoustic wave in the piezoelectric crystal, and the density of the metal compound in the metal compound film layer (5) is greater than the density of the metal of the interdigital bar (3).
4. The resonator with the function of suppressing the hybrid ripple as claimed in claim 1, wherein the upper interdigital region (1) and the lower interdigital region (2) are each divided into a functional region C, the upper part of the interdigital bar (3) in the functional region C is covered with a metal compound film layer (5) based on a chemical reaction, and the upper part of the wafer substrate (6) in the functional region C is subjected to substrate etching to obtain an etched region (8).
5. The resonator with the function of suppressing the ripple of the hybrid mode according to claim 4, wherein the functional area C is arranged to extend along the arrangement direction of the interdigital strips (3), the etching area (8) is arranged at a gap position where the interdigital strips (3) in the upper interdigital area (1) and the interdigital strips (3) in the lower interdigital area (2) are opposite, and the functional area C does not cover the end parts of the interdigital strips (3).
6. A filter having a function of suppressing a ripple of a hetero-mode, comprising a housing and a resonator provided in the housing, the resonator being the resonator according to any one of claims 1 to 5.
7. The method of forming a resonator having a function of suppressing a hybrid ripple as set forth in claim 1, comprising the steps of:
performing functional area division on a structure formed by the wafer substrate (6) and the interdigital metal layer (7) to obtain a functional area C and a functional area D;
injecting a gas/liquid/solid reactant above the interdigital metal layer (7) through ion implantation, etching sputtering reaction, reactive ion beam polishing and other technologies;
the interdigital strips (3) in the interdigital metal layer (7) in the functional area D are subjected to chemical reaction with the injected reactant to obtain a metal compound, and the obtained metal compound is covered on the interdigital strips (3) subjected to chemical reaction to form a metal compound film layer (5);
and stopping injecting reactants when the thickness of the metal compound film layer (5) is 1-3% lambda, and finishing the arrangement of the metal compound film layer (5).
8. The molding method according to claim 7, wherein the interdigital strip (3) located in the functional region C is chemically reacted with the injected reactant to obtain a metal compound, and the obtained metal compound is covered on the interdigital strip (3) subjected to the chemical reaction to form a metal compound film layer (5);
and etching the wafer substrate (6) in the functional area C through an etching sputtering reaction to obtain an etching area (8), wherein the etching area (8) is arranged at a gap position where the interdigital strips (3) in the upper interdigital area (1) are opposite to the interdigital strips (3) in the lower interdigital area (2).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311789028.3A CN117713738A (en) | 2023-12-22 | 2023-12-22 | Resonator with function of suppressing hetero-mode ripple, filter and forming method |
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| CN202311789028.3A CN117713738A (en) | 2023-12-22 | 2023-12-22 | Resonator with function of suppressing hetero-mode ripple, filter and forming method |
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| CN (1) | CN117713738A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802650A (en) * | 2017-11-16 | 2019-05-24 | 株式会社村田制作所 | Acoustic wave device, high-frequency front-end circuit and communication device |
| CN210986062U (en) * | 2019-08-05 | 2020-07-10 | 北京中讯四方科技股份有限公司 | Temperature compensation acoustic surface wave filter |
| CN218499120U (en) * | 2022-07-30 | 2023-02-17 | 锐石创芯(重庆)科技有限公司 | Resonator, filter and electronic device |
| CN115842527A (en) * | 2022-12-21 | 2023-03-24 | 天通瑞宏科技有限公司 | Surface acoustic wave resonator and filter of heterogeneous metal electrode |
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2023
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802650A (en) * | 2017-11-16 | 2019-05-24 | 株式会社村田制作所 | Acoustic wave device, high-frequency front-end circuit and communication device |
| CN210986062U (en) * | 2019-08-05 | 2020-07-10 | 北京中讯四方科技股份有限公司 | Temperature compensation acoustic surface wave filter |
| CN218499120U (en) * | 2022-07-30 | 2023-02-17 | 锐石创芯(重庆)科技有限公司 | Resonator, filter and electronic device |
| CN115842527A (en) * | 2022-12-21 | 2023-03-24 | 天通瑞宏科技有限公司 | Surface acoustic wave resonator and filter of heterogeneous metal electrode |
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