CN117712825A - Resonant cavity, semiconductor laser and preparation method of resonant cavity - Google Patents
Resonant cavity, semiconductor laser and preparation method of resonant cavity Download PDFInfo
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- CN117712825A CN117712825A CN202311603103.2A CN202311603103A CN117712825A CN 117712825 A CN117712825 A CN 117712825A CN 202311603103 A CN202311603103 A CN 202311603103A CN 117712825 A CN117712825 A CN 117712825A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/146—External cavity lasers using a fiber as external cavity
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Abstract
The invention relates to a preparation method of a resonant cavity, which comprises the following steps: s1, selecting an unetched active layer, dividing the unetched active layer into a first area and a second area, wherein one end, far away from the first area, of the second area is a light emitting end, S2, carrying out sinking etching on the first area, carrying out morphology etching on the second area to obtain a first-stage resonant cavity with a plurality of protruding parts, S3, burying an epitaxial growth active layer material on the first-stage resonant cavity, thickening the active layer, S4, carrying out morphology etching on the second area again after the growth is finished, and obtaining a second-stage resonant cavity with a plurality of protruding parts, wherein the connecting line of the tips of the protruding parts of the second-stage resonant cavity is parallel to the connecting line of the tips of the protruding parts of the second-stage resonant cavity. A resonant cavity and a semiconductor laser chip are also provided. The invention can increase the effective resonance length on the basis of not increasing the physical size, improves the light-emitting power and reduces the influence of light reflected by the outside.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to a resonant cavity, a semiconductor laser and a preparation method of the resonant cavity.
Background
With the increasing demands of cloud computing, AI,5G transmission and the like, demands of infrastructure construction of data centers, base stations and the like are also increasing, and the optical communication market also enters a high-speed development period. The demand of optical modules with different transmission index requirements is also rising year by year, and as a core light source in the optical modules, the choice of performance and cost of a semiconductor laser chip is also a focus of attention of various large communication equipment manufacturers and network operators in order to adapt to different application scenes.
The traditional Fabry-Perot resonant cavity FP laser has a simple manufacturing mode, but the excited light is in a multi-longitudinal mode, and the method cannot be well applied in the long-distance optical fiber transmission process in consideration of the influence of chromatic dispersion. Moreover, how to avoid the light emitted by the semiconductor laser from being reflected back to the resonant cavity through the external device has an influence on the operation characteristics and reliability of the laser itself is also a concern of all chip factories.
In the conventional semiconductor laser chip design, the structure of an active region serving as an important light emitting region is single, and the size of the active region needs to be selected and removed during the design due to the restriction of critical parameters such as the size of light emitting power, the speed and the like and the manufacturing process. The common Fabry-perot resonator can generate multiple longitudinal mode spectra, and the FP laser cannot be applied to long-distance signal transmission due to the influence of chromatic dispersion, if the FP laser is to be applied to long-distance transmission, a single longitudinal film laser, that is, a DFB laser with a grating structure is required, and the output spectra need a large side mode suppression ratio. In addition, the semiconductor laser with the common structure cannot effectively perform anti-reflection treatment on the light emitted by the laser and reflected by the external device, so that the reflected light returns to the resonant cavity again to cause interference on the operation of the laser chip, noise is increased, and the operation of the chip is unstable.
In the traditional anti-reflection scheme, a lens or other components are added outside a chip to perform anti-reflection treatment in the packaging process, so that an additional optical path coupling butt joint process and additional material cost are required to be added, and the physical size after integration is also increased.
To increase the path, the related document CN113937616a sets a grating on the laser, and the document Monolithically integrated multi-wavelength VCSEL arrays using high-contrast gratings sets grating materials of different refractive indices. However, the process for manufacturing the grating is complex and the yield is low. Although the related document CN102545043A does not use a grating, a polygonal total reflection device is arranged outside the resonant cavity to serve as a filter, and the polygonal total reflection device is mutually coupled with the FP resonant cavity to select modes, so that the single-mode operation of the laser is realized, and the photon motion path is also prolonged. However, the use of a coupler and the selection of total reflection materials causes a great energy loss and a rise in cost, and is not suitable for mass production.
Disclosure of Invention
The invention aims to provide a resonant cavity, a semiconductor laser and a preparation method of the resonant cavity, which can at least solve part of defects in the prior art.
In order to achieve the above object, the embodiment of the present invention provides the following technical solutions: a preparation method of a resonant cavity comprises the following steps: s1, selecting an unetched active layer, dividing the unetched active layer into a first area and a second area, wherein one end of the second area, which is far away from the first area, is a light emitting end,
s2, performing sinking etching on the first area and performing morphology etching on the second area to obtain a resonant cavity with a plurality of protruding parts at the first stage,
s3, burying epitaxial growth active layer material on the resonant cavity in the first stage, thickening the active layer,
and S4, after the growth is finished, performing morphological etching on the second area again to obtain a second-stage resonant cavity with a plurality of protruding parts, wherein the connecting line of the tips of the protruding parts of the second-stage resonant cavity is parallel to the connecting line of the tips of the protruding parts of the second-stage resonant cavity.
Further, the step S2 specifically includes:
s20, masking photoresist on the active layer,
s21, removing the photoresist on the first area corresponding to the active layer,
s22, etching the active layer after the removal is finished, etching down part of the active layer corresponding to the first area,
s23, removing the residual photoresist after etching is finished, forming steps on the first area and the second area of the active layer,
s24, masking the photoresist on the active layer again,
s25, photoetching and exposing the photoresist on the first area corresponding to the active layer, leaving a plurality of small-area photoresists arranged at intervals,
s26, etching the active layer to remove part of the active layer corresponding to the second region, forming a convex part at the small-area photoresist,
and S27, removing the residual photoresist after etching to obtain the resonant cavity in the first stage.
Further, the manner of preparing the resonant cavity of the second stage in the step S4 is identical to the manner of preparing the resonant cavity of the first stage in the step S2.
Further, the material of the buffer layer is buried and grown continuously on the resonant cavity in the second stage, inert gas is introduced before the buried and grown, and inert gas holes with low refractive index are formed in the concave parts between the adjacent convex parts of the upper layer after the buffer layer is grown.
Further, the protruding parts of the resonant cavities in the first stage and the protruding parts of the resonant cavities in the second stage are arranged in a staggered mode.
Further, at least part of the convex parts of the resonant cavity of the first stage and the convex parts of the resonant cavity of the second stage are saw-tooth-shaped.
Further, the included angle theta between the extending direction of the inclined plane of the zigzag convex part and the length direction of the resonant cavity is controlled to be 30-60 degrees.
In the step S2 and the step S4, the topography etching is performed by dry etching and wet etching, and the etching is performed by using the principle that the etching reaction rates of the materials on different crystalline phases are different.
The embodiment of the invention provides another technical scheme that: a resonant cavity is manufactured by adopting the manufacturing method of the resonant cavity.
The embodiment of the invention provides another technical scheme that: a semiconductor laser chip comprises the resonant cavity manufactured by the manufacturing method of the resonant cavity.
Compared with the prior art, the invention has the beneficial effects that:
1. by designing the plurality of protruding parts, the effective resonance length can be increased on the basis of not increasing the physical size, the light-emitting power is improved, and the influence of light reflected by the outside is reduced.
2. The convex part forms a reflection path, so that photons are prevented from escaping from the second cavity of the resonant cavity to return to the first cavity, the carrier concentration in the resonant cavity is effectively increased, and the output efficiency of the laser is improved.
3. Argon holes are formed in the second cavity, argon is used as a low-refractive-index material, the refractive index difference between the argon and the resonant cavity material is increased, the output loss is reduced, the power efficiency of the laser is improved, and the oscillation and reflection efficiency of photons in the resonant cavity is also improved.
4. Through the design of the included angle theta, the range of theta is controlled to be 30-60 degrees, photons can form total reflection on the inclined plane of the protruding part when the value of theta is 45 degrees, so that light reflected by the outside forms an optimal reflection path through the included angle theta, the light can be reflected out again, the light reflected by the outside is prevented from entering the resonant cavity again, the anti-reflection purpose is achieved, and the laser works more stably.
5. The resonant cavity length of the first cavity and the resonant cavity length of the second cavity can be accurately calculated, so that stable standing waves formed in the first cavity can be overlapped and amplified after passing through the second cavity, and the main wavelengths required to be output can be restrained, so that the effect of enhancing the side mode restraining ratio is achieved, a better single-mode lasing mode can be formed even if no grating exists, and the long-distance transmission capacity of the FP laser chip is improved.
6. The inner walls of the upper side and the lower side of the second cavity are inwards recessed to form a plurality of protruding parts, wherein connecting lines of all tops of the protruding parts at the upper side are parallel to connecting lines of all tops of the protruding parts at the lower side, and the purpose of the inner wall is to limit and compress the size of a light field, so that the divergence angle of a light spot of laser excited from the light emitting cavity surface is not too large, subsequent optical fiber coupling is facilitated, further, the protruding parts at the upper side and the lower side are matched, an optimal intra-cavity photon reflection path is obtained, the reflection frequency of photons in a resonant cavity is increased, meanwhile, the loss of photons in the resonant cavity is reduced, the threshold current of a laser chip is reduced, and the light emitting power is increased.
Drawings
FIG. 1 is a schematic diagram of a resonant cavity according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a semiconductor laser chip according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a motion trace of photon reflection in a first cavity of a resonant cavity and a motion trace of external reflection light reflected back to the resonant cavity according to an embodiment of the present invention;
FIG. 4 is a specific preparation flow of a preparation method of a resonant cavity according to an embodiment of the present invention;
in the reference numerals: 1-a first cavity; 10-tail end; 2-a second cavity; 20-head end; 21-a light emitting end; 22-a projection; 23-inclined plane; 24-a depression; 3-a buffer layer; 30-argon holes; 4-connecting part; 5-electrode; a 6-connection; 7-an active layer; 8-photoresist; 9-small area photoresist.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, an embodiment of the present invention provides a resonant cavity, which includes a first cavity 1 and a second cavity 2, wherein a tail end 10 of the first cavity 1 is communicated with a head end 20 of the second cavity 2, an end of the second cavity 2 away from the first cavity 1 is a light-emitting end 21, and a plurality of protruding portions 22 are formed by recessing an inner wall of the second cavity 2. The resonant cavity of this embodiment is composed of two cavities, which are respectively defined as a first cavity 1 and a second cavity 2 according to the connection sequence thereof for convenience of distinction, and the two cavities are connected end to end, wherein the tail end 10 of the second cavity 2, that is, the end far away from the first cavity 1 is the light emitting end 21, and photons can be emitted from the light emitting end 21 of the second resonant cavity. In order to solve at least part of the technical problems mentioned in the background art, the present embodiment skillfully improves the structural form of the second cavity 2, and under the condition of not changing the overall shape length of the second cavity 2, by designing a plurality of protruding parts 22, photons can have longer effective reflection and resonance in the second cavity 2, so as to generate more energy, in fact, innumerable photons are randomly reflected and collided in the resonant cavity, and finally the photons are reflected and collided to overflow the resonant cavity, so that laser with higher power can be formed. And the convex part 22 forms a reflection path, so that photons are prevented from escaping from the second cavity 2 of the resonant cavity back to the first cavity 1, the carrier concentration in the resonant cavity is effectively increased, and the output efficiency of the laser is improved.
With reference to fig. 1, at least a portion of the protruding portions 22 are saw-tooth-shaped. In this embodiment, the protruding portions 22 are designed to be saw-tooth-shaped, as shown in fig. 3, the photons are reflected and resonated between the protruding portions 22 (as shown by the left-hand square arrow), and the overflowed photons can not return to the second cavity 2 any more, so as to achieve the purpose of antireflection. In order to better realize reflection, resonance and antireflection, the inclination angle of the protruding part 22 can be controlled between 30-60 degrees, namely, the included angle theta between the extending direction of the inclined surface 23 of the protruding part 22 and the directions of the first cavity 1 and the second cavity 2 is controlled between 30-60 degrees, when the value of theta is 45 degrees, photons can form total reflection on the inclined surface of the protruding part, so that the reflection route is longest in the size of the fixed resonant cavity, the reflection route is optimal, and the obtained energy is the most. The directions of the first cavity 1 to the second cavity 2 defined herein, that is, the horizontal direction when the resonant cavity is placed horizontally as shown in fig. 1, or the length direction of the resonant cavity, the entire resonant cavity is long, so that the length direction is the horizontal direction when it is placed horizontally. Of course, the protruding portion 22 may be formed in an arc shape, a rectangular shape, or the like, instead of being formed in a zigzag shape, that is, a triangular shape in nature. The purpose of increasing the reflection distance can be achieved by the convex structure. Or the second cavity 2 is formed by mixing various protruding parts 22 with different shapes, for example, on the second cavity 2, part of the protruding parts 22 adopts a triangle shape, and part of the protruding parts 22 adopts a three-section structure form, for example, the protruding parts 22 at the lower side of fig. 1 are connected by two inclined planes 23 by adopting a straight section, and the structure is also a concave structure form at the upper side, so that the three-section structure form is a unique structure generated during etching, and the three-section structure form can be made into a triangle structure form by controlling etching precision. Of course, besides the structural form of this embodiment, the light emitting device may also be partially arc-shaped, partially rectangular, and may be optionally combined according to practical situations, so that a better light emitting effect can be obtained compared with a common cavity, such as the first cavity 1, without any change.
Referring to fig. 1, in the first cavity 1, at least one of the opposite inner walls is provided with the protruding portion 22, and each protruding portion 22 on any one of the inner walls is disposed towards each protruding portion 22 on the opposite inner wall. In the first cavity 1, the position of the designed protruding portion 22 is required, at least one opposite inner wall needs to be found in the cavity, and the protruding portion 22 is formed on the opposite inner wall, and the protruding portion 22 is formed on the upper and lower sides as shown in fig. 1, so that effective reflection can be formed. As shown in fig. 1, the projection 22 of the upper side wall is the projection 22 facing the lower side wall. In other embodiments, the protrusions 22 of the upper sidewall are staggered with the protrusions 22 of the lower sidewall, so that photons can overflow from the light exit cavity after being reflected in the resonant cavity.
As an optimization scheme of the embodiment of the present invention, referring to fig. 1, the resonant cavity further includes a buffer layer 3 applied on the outer walls of the first cavity 1 and the second cavity 2, where the buffer layer 3 is located on the same side of the first cavity 1 and the second cavity 2. In this embodiment, after the two cavities are manufactured, inert gas such as argon is introduced, and the material of the growth buffer layer 3 is buried again, so as to form a complete resonant cavity. An argon hole 30 is formed in the second cavity 2, so that the material reflectivity difference around the resonant cavity wall is improved, and the efficiency of oscillation and reflection of photons in the resonant cavity is improved. Since the inert gas is introduced, the buffer layer 3 is embedded into the recess 24 formed on the outer wall of the second cavity 2 during burial, and inert gas holes are formed therein, and argon gas is introduced into the holes 30.
As an optimization scheme of the embodiment of the present invention, referring to fig. 1, the first cavity 1 and the second cavity 2 of the resonant cavity are in equidistant structural form, which is consistent with the structural form of the traditional resonant cavity, and only the internal structure is improved, and the external shape is not different.
Referring to fig. 3, an embodiment of the present invention provides a semiconductor laser chip, which includes the above-mentioned resonant cavity and an electronic electrode 5 provided for the resonant cavity, wherein the electrode 5 is communicated with the first cavity 1 through a connection portion 64, and the connection portion 64 is located in the middle of the first cavity 1. The resonant cavity is used in a semiconductor laser chip, so that the performance of the chip can be improved. And the resonant cavity length of the first cavity 1 and the second cavity 2 can be accurately calculated, so that stable standing waves formed by the first cavity 1 can be overlapped and amplified after passing through the second cavity 2, and main wavelengths required to be output can be restrained, so that the effect of enhancing the side mode restraining ratio is achieved, a better single-mode lasing mode can be formed even if no grating exists, and the remote transmission capacity of a laser chip is improved.
Referring to fig. 4, the method for preparing a resonant cavity includes steps of S1, selecting an unetched active layer 7, dividing the unetched active layer 7 into a first area and a second area, wherein one end of the second area, which is far away from the first area, is a light emitting end 21, S2, performing dip etching on the first area, performing topography etching on the second area to obtain a resonant cavity with a first stage with a plurality of protruding portions 22, S3, burying epitaxial growth active layer 7 material on the resonant cavity with the first stage, thickening the active layer 7, S4, performing topography etching on the second area again after the growth is completed to obtain a resonant cavity with a second stage with a plurality of protruding portions 22, and connecting lines of tips of the protruding portions 22 of the resonant cavity with the second stage are parallel to connecting lines of tips of the protruding portions 22 of the resonant cavity with the second stage. In this embodiment, the shape etching is performed twice, after the first etching is completed, the active layer 7 material or the resonant material needs to be grown again, the active layer 7 is thickened, and then the second shape etching is performed, so that the resonant cavity with the protruding portions 22 on the upper side and the lower side can be finally obtained, and the protruding portions 22 on the upper side and the lower side are the same in practice, so that the protruding portions are not distinguished, and are collectively referred to as protruding portions 22, if the distinguishing is performed, the protruding portion 22 on the lower side can be defined as a first protruding portion 22, which represents the protruding portion 22 etched first, and the protruding portion 22 on the upper side is defined as a second protruding portion 22, which is the protruding portion 22 etched later. The first cavity 1 mentioned in the above embodiment is the first area in the present preparation method, and the second cavity 2 is the second area, and no further distinction is made here. The resonant cavity prepared by the method is the resonant cavity of the embodiment. For other refinement of the resonant cavity, please refer to the above embodiment, and the details are not repeated here. In other embodiments, the protruding portions 22 of the second-stage resonator are staggered with the protruding portions 22 of the second-stage resonator, not designed to be opposite, but staggered, so that it is more advantageous for photons to spill out of the light-emitting cavity after being reflected in the resonator.
As an optimization scheme of the embodiment of the present invention, referring to fig. 4, fig. 4 shows all steps from the beginning to the end (except for the step of growing the material of the buffer layer 3 and making the inert gas holes), and the steps are performed according to the direction indicated by the arrow. Specifically, in the first step, regions are divided first, and the active layer 7 is divided into a first region and a second region; secondly, performing photoresist 8 masking on the active layer 7; thirdly, removing the photoresist 8 above the first area; the fourth step, the active layer 7 is etched, and the active layer 7 is not etched because the second area is protected by the photoresist 8, so that the etching depth is well controlled when the active layer 7 in the first area is etched; fifthly, removing the photoresist 8 on the second area; sixthly, performing photoresist 8 masking on the active layer 7 with the step structure; seventh, the photoresist 8 on the second area is processed to obtain a plurality of small-area photoresists 9, and the processing process is to use a photoetching plate for exposure, and the photoetching plate is provided with a plurality of windows; eighth step, etching is started, because the second area is protected by the small-area photoresist 9, the protected position is not etched, the active layer 7 around the small-area photoresist 9 is etched, and the etching is performed by adopting a dry etching method and a wet etching method by utilizing the principle that the etching reaction rates of materials on different crystalline phases are different, so that the saw-tooth-shaped morphology as shown in the figure can be obtained; ninth, removing each small-area photoresist 9 to obtain a resonant cavity in the first stage, wherein the resonant cavity is slightly thin; a tenth step of burying and epitaxially growing an active layer 7 material on the resonant cavity of the first stage, and thickening the active layer 7, wherein the process can be performed on MOCVD; eleventh, after thickening, carrying out photoresist 8 mask again; a twelfth step of performing the seventh step again, and forming a plurality of small-area photoresists 9 again on the second area; thirteenth, performing the eighth step again to obtain a saw-tooth shape as shown in the figure; and fourteenth step, removing the photoresist 8 on the first area and the small-area photoresist 9 on the second area to obtain the resonant cavity of the second stage. The saw-tooth design increases the actual equivalent optical path length, which is equivalent to the length of the resonant cavity, and increases the equivalent oscillation distance of photons in the resonant cavity, and the output optical power can also be increased, thereby improving the output efficiency of the semiconductor laser and reducing the influence of reflected light. The wavelength condition that stable standing waves can be formed in the resonant cavity is integral multiple of 1/2 of the cavity length, the second area and the first area are equivalent to two sections of resonant cavities with different equivalent lengths, after the stable standing waves with different wavelengths formed in the first area enter the second area, if the equivalent cavity length of the second area is accurately designed, the condition of standing waves formed in the first area can be changed, standing waves can be formed again in the second area by the new effective resonant cavity length, the standing wave intensity of unnecessary wavelengths can be effectively restrained, the standing wave intensity of wavelengths required to be output is increased, and the side mode suppression ratio can be improved under the condition that no grating exists.
In the above-described process, the position of the protrusion 22 is controlled by controlling the position of the small photoresist 8. Finally, the saw-toothed protruding portion 22 shown in fig. 3 can provide a resonant cavity having an effect of increasing an effective resonance length, antireflection, and the like.
As an optimization scheme of the embodiment of the invention, the material of the growth buffer layer 3 is continuously buried on the resonant cavity in the second stage, inert gas is introduced before the buried growth, and after the buffer layer 3 is grown, inert gas holes with low refractive index are formed in the concave parts 24 between the adjacent convex parts 22 of the upper layer, so that the low refractive index is formed, the material reflectance difference around the wall of the resonant cavity is improved, and the oscillation and reflection efficiency of photons in the resonant cavity is improved. The process may be performed on MOCVD.
In the semiconductor laser chip, electrons are injected from the electrode 5, the concentration of carriers in the first area of the active area is increased along with the increase of injection current, electron hole pairs are compounded to generate photons, the photons come to the second area along with oscillation, and the second area is in a zigzag shape with an included angle theta, and the active area material and the argon hole 30 form a larger refractive index difference, as shown in fig. 3, the photons can be more easily restrained in the second area after reaching the second area from the first area, the inner walls at the upper side and the lower side of the second cavity are inwards recessed to form a plurality of protruding parts, wherein the connecting lines of the tips of the protruding parts of the resonant cavity of the second stage are parallel to the connecting lines of the tips of the protruding parts of the resonant cavity of the second stage, and the size of the compressed light field is limited, so that the spot angle of laser emitted from the surface of the light emitting cavity is not too large, the subsequent coupling is facilitated, and further, the photons are more easily restrained in the second area after reaching the second area, and the protruding parts at the upper side and lower side are matched to obtain the optimal reflection path, and the photon reflection loss in the resonant cavity can be reduced, and the laser power loss in the resonant cavity can be reduced. The length of the actual equivalent optical path is increased through continuous collision and reflection, so that more photons can collide and oscillate in the second area, photons in the second area are difficult to escape back to the first area due to the zigzag path, so that photons can more easily and rapidly obtain energy and are excited out of the front light emitting cavity surface, the threshold current of the laser is lower than that of a conventional laser, and under the cavity length design of the same physical size, the zigzag design of the scheme enables the actual equivalent optical path length to be increased, and compared with the conventional scheme, the light emitting power can be larger. In addition, the argon holes 30 are formed in the sawtooth-shaped material at the upper half part, so that the low refractive index is formed, the material reflectivity difference around the resonant cavity wall is improved, and the efficiency of oscillation and reflection of photons in the resonant cavity is improved.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. The preparation method of the resonant cavity is characterized by comprising the following steps:
s1, selecting an unetched active layer, dividing the unetched active layer into a first area and a second area, wherein one end of the second area, which is far away from the first area, is a light emitting end,
s2, performing sinking etching on the first area and performing morphology etching on the second area to obtain a resonant cavity with a plurality of protruding parts at the first stage,
s3, burying epitaxial growth active layer material on the resonant cavity in the first stage, thickening the active layer,
and S4, after the growth is finished, performing morphological etching on the second area again to obtain a second-stage resonant cavity with a plurality of protruding parts, wherein the connecting line of the tips of the protruding parts of the second-stage resonant cavity is parallel to the connecting line of the tips of the protruding parts of the second-stage resonant cavity.
2. The method for preparing a resonant cavity according to claim 1, wherein the step S2 specifically comprises:
s20, masking photoresist on the active layer,
s21, removing the photoresist on the first area corresponding to the active layer,
s22, etching the active layer after the removal is finished, etching down part of the active layer corresponding to the first area,
s23, removing the residual photoresist after etching is finished, forming steps on the first area and the second area of the active layer,
s24, masking the photoresist on the active layer again,
s25, photoetching and exposing the photoresist on the first area corresponding to the active layer, leaving a plurality of small-area photoresists arranged at intervals,
s26, etching the active layer to remove part of the active layer corresponding to the second region, forming a convex part at the small-area photoresist,
and S27, removing the residual photoresist after etching to obtain the resonant cavity in the first stage.
3. The method of manufacturing a resonant cavity according to claim 1, wherein the mode of manufacturing the resonant cavity of the second stage in the step S4 is identical to the mode of manufacturing the resonant cavity of the first stage in the step S2.
4. The method of manufacturing a resonant cavity according to claim 1, wherein the second-stage resonant cavity is continuously buried with a material of the growth buffer layer, and inert gas is introduced before the buried growth, and after the buffer layer is grown, inert gas holes with low refractive index are formed in the concave portions between adjacent convex portions of the upper layer.
5. The method of manufacturing a resonant cavity according to claim 1, wherein the protruding portions of the resonant cavity of the first stage are staggered with the protruding portions of the resonant cavity of the second stage.
6. The method of manufacturing a resonant cavity according to claim 1, wherein at least part of the protruding portions of the resonant cavity of the first stage and the protruding portions of the resonant cavity of the second stage are saw-toothed.
7. The method of manufacturing a resonant cavity according to claim 6, wherein an angle θ between a direction in which the inclined surface of the zigzag-shaped protruding portion extends and a length direction of the resonant cavity is controlled to be 30 to 60 °.
8. The method for manufacturing a resonant cavity according to claim 1, wherein in the step S2 and the step S4, the topography etching is performed by dry etching and wet etching, and the etching is performed by using the principle that etching reaction rates of materials on different crystal phases are different.
9. A resonant cavity, characterized by: a method of manufacturing a resonant cavity as claimed in any one of claims 1 to 8.
10. A semiconductor laser chip, characterized by: a resonant cavity manufactured by a method of manufacturing a resonant cavity as claimed in any one of claims 1 to 8.
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