CN117705279A - Novel far infrared sensing and spectrum integrated chip - Google Patents
Novel far infrared sensing and spectrum integrated chip Download PDFInfo
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- CN117705279A CN117705279A CN202310310418.1A CN202310310418A CN117705279A CN 117705279 A CN117705279 A CN 117705279A CN 202310310418 A CN202310310418 A CN 202310310418A CN 117705279 A CN117705279 A CN 117705279A
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- AUNGANRZJHBGPY-SCRDCRAPSA-N Riboflavin Chemical compound OC[C@@H](O)[C@@H](O)[C@@H](O)CN1C=2C=C(C)C(C)=CC=2N=C2C1=NC(=O)NC2=O AUNGANRZJHBGPY-SCRDCRAPSA-N 0.000 description 14
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- 229960002477 riboflavin Drugs 0.000 description 7
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Abstract
The invention discloses a novel far infrared sensing and spectrum integrated chip, which comprises: far infrared emission layer, with far infrared emission layer paste the far infrared reflection layer that passes through that sets up mutually, with pass through the first supporting layer that far infrared reflection layer pastes the setting mutually, with the far infrared local enhancement layer that the supporting layer pasted the setting mutually, with the sample layer that far infrared local enhancement layer pasted the setting mutually, with the sample layer paste the second supporting layer that the setting mutually and with the far infrared detection layer that the second supporting layer pasted the setting mutually. According to the invention, part of the functional layers can be reduced or a plurality of functional layers can be combined, and the far infrared generation, local enhancement and detection parts are miniaturized and integrated, so that the flexibility of a far infrared spectrum system is improved, and the accuracy of far infrared sensing and spectrum detection is improved.
Description
Technical Field
The invention relates to the technical field of far infrared spectrums, in particular to a novel far infrared sensing and spectrum integrated chip.
Background
The far infrared wave is a special electromagnetic wave with a frequency range of 0.1-10 far infrared and a wavelength range of 0.03 to 3mm. The research technology of electromagnetic waves (microwaves and infrared waves) at two ends of a far infrared band is very mature, microwaves with the frequency lower than 100GHz can be generated by a wireless communication technology, infrared rays with the frequency higher than 30 far infrared rays can be excited by a laser technology, and the far infrared band is just in the middle of electronics and photonics. In recent years, due to the rapid development of ultra-fast laser technology and new materials, far infrared related technology has been developed correspondingly, especially effective far infrared source and far infrared detection technology, and these new technologies have attracted attention to far infrared research in various countries, and application research of far infrared science has gradually entered a new development stage.
As a technical field which has been attracting attention in recent years, far infrared time domain spectroscopy has an important application prospect in many basic research fields, industrial application fields, medical fields, military fields and biological fields. The far infrared time domain spectrum technology is a far infrared generation and detection system based on a coherent detection technology, can obtain amplitude information and phase information of far infrared pulses at the same time, and can directly obtain optical parameters such as absorption coefficient, refractive index, transmissivity and the like of a sample by carrying out Fourier transformation on a time waveform. The far infrared time domain spectrum has high detection signal-to-noise ratio and wide detection bandwidth, has high detection sensitivity, and can be widely applied to detection of various samples. However, the current far infrared time domain spectroscopy technology mainly has two problems: firstly, because the far infrared time domain spectrum system is based on a space transmission technology, far infrared waves need to be transmitted in space for a long distance, and the application of the far infrared technology is greatly limited by the strong absorption of water vapor in the air to the far infrared waves; and secondly, all optical components of the conventional far infrared time domain spectrum system are mutually separated, and the occupied space of the whole system reaches the order of meters. The two problems cause that far infrared spectrum technology is greatly limited in some scenes with narrow space or scenes with high water vapor concentration.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a novel far infrared sensing and spectrum integration chip, which can reduce part of functional layers or combine a plurality of functional layers, miniaturize and integrate the generation, local enhancement and detection parts of far infrared, improve the flexibility of a far infrared spectrum system and improve the accuracy of far infrared sensing and spectrum detection. To achieve the above objects and other advantages and in accordance with the purpose of the invention, there is provided a novel far infrared sensing and spectrum integration chip, comprising:
the infrared detection device comprises a far infrared emission layer, a far infrared transmitting reflective layer, a first supporting layer, a far infrared local enhancement layer, a sample layer, a second supporting layer and a far infrared detection layer, wherein the far infrared transmitting reflective layer is arranged by being attached to the far infrared emission layer;
each functional layer is connected by physical splicing or coating, and the total thickness of the multi-layer functional layers is in the order of millimeters.
Preferably, the far infrared emission layer is a nonlinear semiconductor crystal, a ferromagnetic heterostructure, or a photoconductive antenna.
Preferably, the far infrared transmitting reflective layer is made of monocrystalline silicon or polytetrafluoroethylene with high far infrared wave transmitting property.
Preferably, the first support layer and the second support layer are both fused quartz, sapphire, plexiglas or polytetrafluoroethylene materials.
Preferably, the far infrared local enhancement layer is a far infrared super-structured surface enhanced for specific frequencies of sensing applications, which can generate resonance signals in the 0.1-10THz frequency band.
Preferably, the sample layer is closed on three sides to provide support, and an opening is provided on one side, the opening being used for injecting and placing the sample and for interaction of the sample with far infrared waves.
Preferably, the far infrared detection layer is a nonlinear crystal or photoconductive antenna.
Preferably, the far infrared super-structured surface is formed by periodically arranging unit structures with the dimensions far smaller than the far infrared wavelength, and the specific unit structure shape can be a bar shape, a split ring, a cross shape, a split ring pair and an omega structure; the specific unit structure material can be metal, graphene or dielectric material.
Preferably, when specifically used, a part of the functional layers may be reduced, or a plurality of functional layers may be combined.
Compared with the prior art, the invention has the beneficial effects that: the far infrared generation, interaction between the far infrared and the substance and the far infrared detection are integrated, so that the propagation loss of the far infrared can be removed, and the far infrared time domain spectrum with the meter scale can be reduced to the millimeter scale. A femtosecond laser beam is incident on the integrated chip, and far infrared waves are generated by the far infrared generation layer. After filtering the femtosecond laser, the far infrared wave directly reaches the sample layer without space propagation and collimation and interacts with the sample. The far infrared wave transmitted from the sample directly reaches the far infrared detection layer without space propagation and collimation. The far infrared wave on the detection layer can be converted into photoelectric signals through another beam of femtosecond laser, the conventional far infrared time domain spectrum system is enabled to be miniaturized and integrated through generation, local enhancement and detection of far infrared, the size is reduced from the meter level to the millimeter level, the system comprises a far infrared emitter, a detector and a total body of a far infrared transmission path, the flexibility of the far infrared spectrum system is improved, long-distance interaction of the far infrared wave and water vapor in the air is avoided through chip integration, and the accuracy of far infrared sensing and spectrum detection is improved.
Drawings
FIG. 1 is a schematic diagram of a novel far infrared sensing and spectrum integration chip according to the present invention;
fig. 2 is a schematic diagram of a far infrared time domain spectrum system of the novel far infrared sensing and spectrum integration chip according to the invention;
FIG. 3 is a graph showing experimental test results of riboflavin using a novel far infrared sensor and spectrum integrated chip according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-3, a novel far infrared sensing and spectrum integration chip comprises:
the infrared detection device comprises a far infrared emission layer 10, a far infrared transmitting reflective layer 20, a first supporting layer 30, a far infrared local enhancement layer 40, a sample layer 50, a second supporting layer 60 and a far infrared detection layer 70, wherein the far infrared transmitting reflective layer 20 is arranged by being attached to the far infrared emission layer 10, the first supporting layer 30 is arranged by being attached to the far infrared transmitting reflective layer 20, the far infrared local enhancement layer 40 is arranged by being attached to the supporting layer 30, the sample layer 50 is arranged by being attached to the far infrared local enhancement layer 40, the second supporting layer 60 is arranged by being attached to the sample layer 50, and the far infrared detection layer 70 is arranged by being attached to the second supporting layer 60; each functional layer is connected by physical splicing or coating, and the total thickness of the multi-layer functional layers is in the order of millimeters. The current generation and spectrum detection of broadband far infrared use a large number of optical elements, the distance between each optical element is about tens of centimeters, and the spectrum volume of the far infrared time domain is large. The invention has the core that the far infrared generation, the interaction of the far infrared and the substance and the far infrared detection part are integrated integrally, the propagation loss of the far infrared can be removed, and the far infrared time domain spectrum with the meter scale can be reduced to the millimeter scale. A femtosecond laser beam is incident on the integrated chip, and far infrared waves are generated by the far infrared generation layer. After filtering the femtosecond laser, the far infrared wave directly reaches the sample layer without space propagation and collimation and interacts with the sample. The far infrared wave transmitted from the sample directly reaches the far infrared detection layer without space propagation and collimation. The far infrared wave on the detection layer can be converted into a photoelectric signal by another beam of femtosecond laser.
Further, the far infrared emission layer 10 is a nonlinear semiconductor crystal, a ferromagnetic heterostructure, or a photoconductive antenna.
Further, the far infrared transmitting reflective layer 20 is made of monocrystalline silicon or polytetrafluoroethylene having a high far infrared wave transmitting property.
Further, the first support layer 30 and the second support layer 60 are made of fused silica, sapphire, plexiglas or polytetrafluoroethylene.
Further, the far infrared local enhancement layer 40 is a far infrared super-structured surface enhanced by specific frequencies for sensing applications, and can generate resonance signals in the 0.1-10THz frequency band.
Further, the sample layer 50 is closed on three sides to provide support, with an opening on one side for injecting and placing the sample and for interaction of the sample with far infrared waves.
Further, the far infrared detection layer 70 is a nonlinear crystal or photoconductive antenna.
Example 1
Fig. 2 is a schematic diagram of a far infrared time domain spectrum system designed by using a far infrared sensing and spectrum integrated chip according to an embodiment of the present invention.
The femtosecond laser emitted by the femtosecond light source irradiates on the far infrared spectrum integrated chip, and reaches the 7 far infrared detection layer through the 1 far infrared emission layer, the 2 far infrared transmission reflection layer, the 3 support layer, the 4 far infrared local enhancement layer, the 5 sample layer, the 6 support layer and the detection light.
The femtosecond pulse generated by the femtosecond light source 1 is divided into two beams by the beam splitter 2, which are respectively called generated light and detected light, the generated light sequentially passes through the reflectors 3, 4, 5, 6 and 7 and then passes through the chopper 10 to reach the far infrared spectrum test integrated chip, wherein the reflectors 4 and 5 are positioned on a stepping motor delay line, the time difference between the pulses can be controlled by the movement of the stepping motor, and the position of the laser focused on the far infrared spectrum test integrated chip is required to be unchanged in the moving process of the stepping motor. The detection light reaches the other side of the integrated chip through the reflecting mirror 8 and the beam splitter 9. The detection light reflected by the integrated chip reaches the ultra-fast photoelectric detection module 13 and finally reaches the computer and the storage medium 14.
FIG. 3 is the spectroscopic data of riboflavin tested using the examples of the present invention. In the experiment, the riboflavin is uniformly spread on the surface of a far infrared sensing and spectrum integration chip, transmission detection is carried out, the far infrared time domain spectrum is shown in figure 3a, and the far infrared frequency domain spectrum obtained by Fourier transformation of the time domain signal is shown in figure 3 b. The dashed line represents the reference data of the blank chip when the riboflavin sample is not placed, and the solid line represents the detection data of the riboflavin sample uniformly loaded on the surface. By comparing the dotted line with the solid line, the characteristic absorption spectrum of the riboflavin sample in the 1-2THz frequency band can be obtained. The figure can illustrate that the far infrared sensing and spectrum integrated chip can effectively realize the far infrared sensing and far infrared detection of the trace riboflavin sample.
The number of devices and the scale of processing described herein are intended to simplify the description of the invention, and applications, modifications and variations of the invention will be apparent to those skilled in the art.
Although embodiments of the present invention have been disclosed above, it is not limited to the details and embodiments shown and described, it is well suited to various fields of use for which the invention would be readily apparent to those skilled in the art, and accordingly, the invention is not limited to the specific details and illustrations shown and described herein, without departing from the general concepts defined in the claims and their equivalents.
Claims (9)
1. The utility model provides a novel far infrared sense and spectrum integrated chip which characterized in that includes:
the infrared detection device comprises a far infrared emission layer (10), a far infrared transmitting reflective layer (20) which is arranged by being attached to the far infrared emission layer (10), a first supporting layer (30) which is arranged by being attached to the far infrared transmitting reflective layer (20), a far infrared local enhancement layer (40) which is arranged by being attached to the supporting layer (30), a sample layer (50) which is arranged by being attached to the far infrared local enhancement layer (40), a second supporting layer (60) which is arranged by being attached to the sample layer (50) and a far infrared detection layer (70) which is arranged by being attached to the second supporting layer (60);
each functional layer is connected by physical splicing or coating, and the total thickness of the multi-layer functional layers is in the order of millimeters.
2. A novel far infrared sensing and spectrum integration chip as claimed in claim 1, characterized in that the far infrared emitting layer (10) is a nonlinear semiconductor crystal, a ferromagnetic heterostructure or a photoconductive antenna.
3. A novel far infrared sensing and spectrum integration chip as claimed in claim 1, characterized in that the far infrared transmitting reflective layer (20) is of monocrystalline silicon or polytetrafluoroethylene material with high far infrared transmitting properties.
4. The novel far infrared sensor and spectrum integrated chip of claim 1, wherein the first support layer (30) and the second support layer (60) are fused silica, sapphire, plexiglass or polytetrafluoroethylene materials.
5. The novel far infrared sensing and spectrum integration chip of claim 4, wherein the far infrared local enhancement layer (40) is a far infrared super-structured surface enhanced by specific frequencies for sensing applications, and can generate resonance signals in the 0.1-10THz frequency band.
6. A novel far infrared sensing and spectroscopy integrated chip as set forth in claim 1, wherein the sample layer (50) is closed on three sides for providing support, and wherein an opening is provided on one side for injecting and placing the sample and for interaction of the sample with far infrared waves.
7. A novel far infrared sensing and spectroscopy integrated chip as claimed in claim 1 wherein the far infrared sensing layer (70) is a nonlinear crystal or photoconductive antenna.
8. The novel far infrared sensing and spectrum integration chip as claimed in claim 5, wherein the far infrared super-structured surface is formed by periodically arranging unit structures with dimensions far smaller than far infrared wavelength, and the specific unit structure shape can be bar-shaped, split ring, cross, slotted ring pair and omega structure; the specific unit structure material can be metal, graphene or dielectric material.
9. The novel far infrared sensing and spectrum integration chip of claim 1, wherein a part of the functional layers can be reduced or a plurality of functional layers can be combined during specific use.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310310418.1A CN117705279A (en) | 2023-03-28 | 2023-03-28 | Novel far infrared sensing and spectrum integrated chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310310418.1A CN117705279A (en) | 2023-03-28 | 2023-03-28 | Novel far infrared sensing and spectrum integrated chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117705279A true CN117705279A (en) | 2024-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310310418.1A Pending CN117705279A (en) | 2023-03-28 | 2023-03-28 | Novel far infrared sensing and spectrum integrated chip |
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| Country | Link |
|---|---|
| CN (1) | CN117705279A (en) |
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2023
- 2023-03-28 CN CN202310310418.1A patent/CN117705279A/en active Pending
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