CN117705276A - Time domain spectrum system based on far infrared sensing and spectrum integrated chip - Google Patents
Time domain spectrum system based on far infrared sensing and spectrum integrated chip Download PDFInfo
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- CN117705276A CN117705276A CN202310315370.3A CN202310315370A CN117705276A CN 117705276 A CN117705276 A CN 117705276A CN 202310315370 A CN202310315370 A CN 202310315370A CN 117705276 A CN117705276 A CN 117705276A
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Abstract
The invention discloses a time domain spectrum system based on far infrared sensing and spectrum integrated chips, which comprises: the system comprises a femtosecond light source, a beam splitting and delaying control unit arranged on one side of the femtosecond light source, a far infrared sensing and spectrum integration chip arranged in the beam splitting and delaying control unit, an ultra-fast photoelectric detection module arranged on one side of the far infrared sensing and spectrum integration chip, and a computer and a storage medium which are in signal connection with the ultra-fast photoelectric detection module. According to the invention, the number of elements is greatly reduced, the efficiency and accuracy of sample detection are improved by eliminating the space propagation of far infrared waves and reducing the loss, and meanwhile, the manufacturing cost of a far infrared time domain spectrum system is reduced.
Description
Technical Field
The invention relates to the technical field of far infrared spectroscopy, in particular to a time domain spectroscopy system based on a far infrared sensing and spectrum integrated chip.
Background
The far infrared wave is electromagnetic wave with frequency of 0.1-10THz, and is located between microwave and infrared light, and has wavelength of 30-3000 μm. The far infrared photon energy is very low, and the far infrared photon energy is basically harmless to various materials, and is an effective non-contact and nondestructive detection mode. Because of the resonance between water molecules and biomacromolecules, the intermolecular van der Waals force and dipole rotation are all basically located in the far infrared frequency band, so far infrared waves are also called life light. The far infrared time domain spectrum technology is a coherent detection technology capable of simultaneously obtaining amplitude and phase information, and refractive index and absorption coefficient can be directly obtained by carrying out frequency domain analysis through Fourier transformation. Meanwhile, the vibration mode of phonons in the crystal can be represented by different absorption peaks and intensities, and the vibration, rotation and structure information of biomolecules can be represented. The high sensitivity, high resolution and high signal to noise ratio of far infrared spectra make them attractive in various research fields. Far infrared technology has not been widely used due to the high cost and complexity of testing limited by far infrared time domain spectroscopy. In recent years, far infrared sources and far infrared detection technologies have been mature, so that far infrared components and various elements have been rapidly developed. However, the current far infrared spectrum and imaging technology is mainly based on a space transmission technology, the far infrared needs to be transmitted in space for a long distance, and the accuracy and signal to noise ratio of the far infrared signal are limited by the strong absorption of the far infrared wave by the water vapor in the air. In addition, far infrared detection in free space also requires a large space. This makes far infrared spectroscopy extremely limited in some scenes where the space is relatively narrow or where the water vapor concentration is high.
Two key problems solved by the invention are: on the one hand, the generation and detection part of the far infrared wave needs to use a large number of optical elements to adjust focusing and collimation of the far infrared wave, and a large space is needed, so that the existing time domain spectrum system is generally huge, and needs to occupy a very large space. The entire spectroscopic system is inconvenient to move due to the large volume and the large number of optical elements used in the system. On the other hand, due to the long propagation distance of far infrared light in air, the influence of water vapor in air needs to be eliminated as much as possible, and a large amount of dry air or nitrogen needs to be filled, so that additional equipment is necessary to further increase the complexity of the system.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a time domain spectrum system based on far infrared sensing and spectrum integrated chips, which greatly reduces the number of elements, improves the efficiency and accuracy of sample detection by eliminating far infrared wave space propagation and reducing loss, and reduces the manufacturing cost of the far infrared time domain spectrum system. To achieve the above objects and other advantages and in accordance with the purpose of the invention, there is provided a time domain spectroscopy system based on a far infrared sensing and spectroscopy integrated chip, comprising:
the system comprises a femtosecond light source, a beam splitting and delaying control unit arranged at one side of the femtosecond light source, a far infrared sensing and spectrum integration chip arranged in the beam splitting and delaying control unit, an ultra-fast photoelectric detection module arranged at one side of the far infrared sensing and spectrum integration chip, and a computer and a storage medium which are in signal connection with the ultra-fast photoelectric detection module;
the beam splitting and delay control unit is used for splitting the femtosecond laser pulse into two pulses with certain delay, and can precisely control the time delay between the two pulses, and is respectively used for generating and detecting the far infrared signal;
the far infrared sensing and spectrum integrated chip is used for generating broadband far infrared, interacting the far infrared with a sample and detecting the far infrared signal;
the ultra-fast photoelectric detection module is used for collecting far-infrared modulated optical signals, collecting signals under different delay time, and carrying out Fourier transform analysis on the collected far-infrared time domain spectrum by using a computer and a storage medium to carry out frequency domain spectrum analysis.
Preferably, the femtosecond light source can be a plurality of femtosecond lasers including solid-state femtosecond lasers, fiber femtosecond lasers and disc femtosecond lasers.
Preferably, the beam splitting and delay control unit comprises a laser beam splitting mirror, a laser reflecting mirror, a lens and an electric control step delay line.
Preferably, a first laser beam splitter is arranged on one side of the femtosecond light source, a first laser reflector is arranged below the first laser beam splitter, a second laser reflector is arranged on one side of the first laser reflector, a third laser reflector and a fourth laser reflector are respectively arranged below the first laser reflector and the second laser reflector, a fifth laser reflector is arranged on one side, far away from the femtosecond light source, of the first laser beam splitter, and a sixth laser reflector is arranged below the third laser reflector.
Preferably, the two sides of the far infrared sensing and spectrum integration chip are respectively provided with a first lens and a second lens, and one side of the second lens, which is far away from the far infrared sensing and spectrum integration chip, is provided with a second laser beam splitter.
Preferably, the ultrafast photoelectric detection module comprises a 1/4 wave plate arranged on one side of the second laser beam splitter, a Wollaston prism or a Grollaston prism arranged on one side of the 1/4 wave plate, a balance bridge photoelectric detector connected with the Grollaston prism in a signal manner, a chopper positioned between the sixth laser reflector and the first lens and a lock-in amplifier connected with the balance bridge photoelectric detector in a signal manner.
Compared with the prior art, the invention has the beneficial effects that: the optical component of the far infrared time domain spectrum is shortened, the propagation of the far infrared wave in the air is reduced as much as possible, and the accuracy and the flexibility of the far infrared measurement are improved. The invention provides a time domain spectrum system and a testing method based on a far infrared sensing and spectrum integrated chip, which can solve the problems that the equipment in the prior art is complex, nitrogen or dry air is not required to be additionally filled, the size of a conventional far infrared time domain spectrum system can be reduced by 2 orders of magnitude, and the influence of water vapor on spectrum analysis is reduced. By reducing the complexity of the system, the stability of the system is greatly improved, and the whole system is exquisite in design, stable and reliable.
Drawings
Fig. 1 is a schematic structural diagram of a time domain spectroscopy system based on a far infrared sensing and spectroscopy integrated chip according to the present invention;
FIG. 2 is a schematic diagram of an integrated chip structure of a time domain spectroscopy system based on far infrared sensing and spectroscopy integrated chips according to the present invention;
FIG. 3 shows a rare earth ferrite NdFeO of a time domain spectroscopy system based on far infrared sensing and spectrum integrated chips according to the present invention 3 Experimental test result graph.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-3, a time domain spectroscopy system based on far infrared sensing and spectrum integration chips, comprising:
the time domain spectrum system and the testing method not only eliminate a photoconductive far infrared emission antenna or a nonlinear electro-optic crystal which is necessary in a conventional system, but also eliminate a plurality of optical elements which are used for focusing and collimating far infrared waves among a far infrared emitter, a sample and a detector, and integrate far infrared waves by means of generating far infrared waves, interacting the far infrared waves with substances and integrating far infrared waves, and removing a beam collimating part which is the most occupied space in a far infrared spectrum, and remove an off-axis parabolic lens widely used for generating the far infrared waves based on the optical method in the prior art, so that a complicated light path becomes micro-integrated and compact. The propagation part of the far infrared space is compressed, and the common collimating element is not needed in the system due to the shortening of the propagation distance in the air, so that the complexity of the system is reduced due to the reduction of the free space optical element, the stability of the whole system is further improved, the efficiency and the accuracy of sample detection are also improved, and meanwhile, the manufacturing cost of the far infrared time domain spectrum system is reduced. In recent years, research on far infrared sources enables people to obtain far infrared sources with higher conversion efficiency and higher intensity;
the beam splitting and delay control unit is used for splitting the femtosecond laser pulse into two pulses with certain delay, and can precisely control the time delay between the two pulses, and is respectively used for generating and detecting the far infrared signal;
the far infrared sensing and spectrum integration chip 12 is used for generating broadband far infrared, interacting the far infrared with a sample and detecting the far infrared signal;
the far infrared sensing and spectrum integration chip 12 comprises a far infrared emission layer, a far infrared transmitting reflecting layer, a first supporting layer, a far infrared local enhancement layer, a sample layer, a second supporting layer and a far infrared detection layer, wherein the far infrared transmitting reflecting layer is attached to the far infrared emission layer; each functional layer is connected by physical splicing or coating, and the total thickness of the multi-layer functional layers is in the order of millimeters. The far infrared emission layer is nonlinear semiconductor crystal, ferromagnetic heterostructure or photoconductive antenna. The far infrared transmitting and reflecting layer is made of monocrystalline silicon or polytetrafluoroethylene and has high far infrared transmitting property. The first supporting layer and the second supporting layer are made of fused quartz, sapphire, organic glass or polytetrafluoroethylene materials. The far infrared local enhancement layer is a far infrared super-structured surface with specific frequency enhancement for sensing application, and can generate resonance signals in the frequency range of 0.1-10 THz. The three sides of the sample layer are closed to provide support, and one side is provided with an opening for injecting and placing the sample and for interaction of the sample with far infrared waves. The far infrared detection layer is a nonlinear crystal or a photoconductive antenna. The far infrared super-structured surface is formed by periodically arranging unit structures with the dimensions far smaller than the far infrared wavelength, and the specific unit structure shape can be a bar shape, a split ring, a cross shape, a split ring pair and an omega structure; the specific unit structure material can be metal, graphene or dielectric material. In particular use, a portion of the functional layers may be reduced or multiple functional layers may be combined.
The far infrared sensing and spectrum integration chip 12 is: the emitter layer 121 is a 10nm thick Pt/CoFeB/Ta ferromagnetic heterostructure grown on a 1mm quartz glass substrate, 122 is a 100 μm thick silicon wafer, 123 sample layer is 1mm thick rare earth ferrite NdFeO 3 124 are ZnTe 1mm thick, and four blocks are stacked closely together by physical stacking, or each block is glued together at the edge locations using glue. The far infrared light excites the ferromagnetic heterostructure and radiates far infrared pulses. The generated light pulse is filtered out after passing through the silicon chip, and only the far infrared pulse is left. Far infrared pulse passes through rare earth ferrite NdFeO 3 Finally, the crystal reaches the ZnTe detecting crystal. The generated light passes through an optical delay line, and the far infrared pulse waveform is recorded by adopting an electro-optic sampling method through adjusting the optical path difference between the generated light pulse and the detection light pulse. The far infrared wave and the detection light are detected at 124<110>Crystalline orientation, 1mm thick ZnTe. Based on the pockels effect, the incident far infrared pulse induces birefringence of the ZnTe crystal, and the birefringence generated in the crystal deflects the polarization direction of the probe pulse. The detection light pulse is converted from linear polarized light to elliptical polarized light through the quarter wave plate. The elliptical polarized light is divided into o light and e light by a Wollaston prism, and the intensity difference between the o light and the e light detected by a pair of balance bridge photoelectric detectors is proportional to the electric field intensity of the far infrared pulse, so that the far infrared pulse waveform is obtained.
The ultrafast photoelectric detection module is used for collecting far infrared modulated optical signals, collecting signals under different delay time, and performing fourier transform analysis on the collected far infrared time domain spectrum by using the computer and the storage medium 14 to perform frequency domain spectrum analysis.
Further, the femto-second light source 1 may be various femto-second lasers, including solid-state femto-second lasers, fiber femto-second lasers, and disc femto-second lasers.
Further, the beam splitting and delay control unit comprises a laser beam splitting mirror, a laser reflecting mirror, a lens and an electric control step delay line, wherein a first laser beam splitting mirror 2 is arranged on one side of the femto-second light source 1, a first laser reflecting mirror 3 is arranged below the first laser beam splitting mirror 2, a second laser reflecting mirror 4 is arranged on one side of the first laser reflecting mirror 3, a third laser reflecting mirror 6 and a fourth laser reflecting mirror 5 are respectively arranged below the first laser reflecting mirror 3 and the second laser reflecting mirror 4, a fifth laser reflecting mirror 8 is arranged on one side, far away from the femto-second light source 1, of the first laser beam splitting mirror 2, a sixth laser reflecting mirror 7 is arranged below the third laser reflecting mirror 6, a first lens 15 and a second lens 16 are respectively arranged on two sides of the far infrared sensing and spectrum integration chip 12, and a second laser beam splitting mirror 9 is arranged on one side, far away from the far infrared sensing and spectrum integration chip 12, of the second lens 16.
Further, the ultrafast photo-detection module comprises a 1/4 wave plate 17 arranged on one side of the second laser beam splitter 9, a Wollaston prism or a Grollan prism 18 arranged on one side of the 1/4 wave plate 17, a balance bridge photo-detector 19 in signal connection with the Grollan prism 18, a chopper 10 positioned between the sixth laser reflector 7 and the first lens 15, and a lock-in amplifier 20 in signal connection with the balance bridge photo-detector 19.
Working principle: the femtosecond pulse generated by the femtosecond light source 1 is divided into two beams after passing through the first laser beam splitter 2, which are respectively called generated light and detected light, the generated light sequentially passes through the first laser reflector 3, the second laser reflector 4, the fourth laser reflector 5, the third laser reflector 6 and the sixth laser reflector 7, and then is focused by the chopper 10 and the first lens 15 to reach the far infrared sensing and spectrum integration chip 12, wherein the second laser reflector 4 and the fourth laser reflector 5 are positioned on a delay line of a stepping motor, the time difference between the pulses can be controlled through the movement of the stepping motor, and the position of the laser focused on the far infrared sensing and spectrum integration chip 12 is required to be unchanged in the movement process of the stepping motor. The detection light passes through the fifth laser reflector 8 and the second laser beam splitter 9 and reaches the other side of the far infrared sensing and spectrum integration chip 12 through the second lens 16. The detection light reflected by the far infrared sensing and spectrum integration chip 12 passes through the second lens 16, the second laser beam splitter 9, the quarter wave plate 17, the Wollaston prism 18 and the balance bridge detector 19.
The number of devices and the scale of processing described herein are intended to simplify the description of the invention, and applications, modifications and variations of the invention will be apparent to those skilled in the art.
Although embodiments of the present invention have been disclosed above, it is not limited to the details and embodiments shown and described, it is well suited to various fields of use for which the invention would be readily apparent to those skilled in the art, and accordingly, the invention is not limited to the specific details and illustrations shown and described herein, without departing from the general concepts defined in the claims and their equivalents.
Claims (6)
1. A time domain spectroscopy system based on far infrared sensing and spectrum integration chips, comprising:
the system comprises a femtosecond light source (1), a beam splitting and delaying control unit arranged on one side of the femtosecond light source (1), a far infrared sensing and spectrum integration chip (12) arranged in the beam splitting and delaying control unit, an ultra-fast photoelectric detection module arranged on one side of the far infrared sensing and spectrum integration chip (12) and a computer and a storage medium (14) which are in signal connection with the ultra-fast photoelectric detection module;
the beam splitting and delay control unit is used for splitting the femtosecond laser pulse into two pulses with certain delay, and can precisely control the time delay between the two pulses, and is respectively used for generating and detecting the far infrared signal;
the far infrared sensing and spectrum integration chip (12) is used for generating broadband far infrared, interacting the far infrared with a sample and detecting the far infrared signal;
the ultra-fast photoelectric detection module is used for collecting far-infrared modulated optical signals, collecting signals under different delay time, and carrying out Fourier transform analysis on the collected far-infrared time domain spectrum by using a computer and a storage medium (14) to carry out analysis on the frequency domain spectrum.
2. A time domain spectroscopy system based on far infrared sensing and spectroscopy integrated chips as claimed in claim 1, wherein the femtosecond light source (1) can be a plurality of femtosecond lasers including solid-state femtosecond lasers, fiber femtosecond lasers, disc femtosecond lasers.
3. The time domain spectroscopy system of claim 2, wherein the beam splitting and delay control unit comprises a laser beam splitter, a laser mirror, a lens and an electronically controlled step delay line.
4. The time domain spectrum system based on the far infrared sensing and spectrum integration chip as set forth in claim 3, wherein a first laser beam splitter (2) is arranged on one side of the femto-second light source (1), a first laser reflector (3) is arranged below the first laser beam splitter (2), a second laser reflector (4) is arranged on one side of the first laser reflector (3), a third laser reflector (6) and a fourth laser reflector (5) are respectively arranged below the first laser reflector (3) and the second laser reflector (4), a fifth laser reflector (8) is arranged on one side, far away from the femto-second light source (1), of the first laser beam splitter (2), and a sixth laser reflector (7) is arranged below the third laser reflector (6).
5. The time domain spectroscopy system based on a far infrared sensing and spectrum integration chip as set forth in claim 4, wherein a first lens (15) and a second lens (16) are respectively disposed on two sides of the far infrared sensing and spectrum integration chip (12), and a second laser beam splitter (9) is disposed on one side of the second lens (16) far from the far infrared sensing and spectrum integration chip (12).
6. The time domain spectroscopy system based on far infrared sensing and spectrum integration chip as set forth in claim 1, wherein the ultra-fast photo detection module comprises a 1/4 wave plate (17) arranged on one side of the second laser beam splitter (9), a Wollaston prism or a graham prism (18) arranged on one side of the 1/4 wave plate (17), a balanced bridge photo detector (19) in signal connection with the graham prism (18), a chopper (10) positioned between the sixth laser mirror (7) and the first lens (15) and a lock-in amplifier (20) in signal connection with the balanced bridge photo detector (19).
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| CN202310315370.3A CN117705276A (en) | 2023-03-28 | 2023-03-28 | Time domain spectrum system based on far infrared sensing and spectrum integrated chip |
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| CN202310315370.3A CN117705276A (en) | 2023-03-28 | 2023-03-28 | Time domain spectrum system based on far infrared sensing and spectrum integrated chip |
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