CN117693252A - Manufacturing method of silicon-based display panel, silicon-based display panel and augmented reality device - Google Patents
Manufacturing method of silicon-based display panel, silicon-based display panel and augmented reality device Download PDFInfo
- Publication number
- CN117693252A CN117693252A CN202311727425.8A CN202311727425A CN117693252A CN 117693252 A CN117693252 A CN 117693252A CN 202311727425 A CN202311727425 A CN 202311727425A CN 117693252 A CN117693252 A CN 117693252A
- Authority
- CN
- China
- Prior art keywords
- silicon
- dielectric film
- insulating dielectric
- display panel
- based display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 92
- 239000010703 silicon Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 230000003190 augmentative effect Effects 0.000 title claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 14
- 238000005498 polishing Methods 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 27
- 230000008569 process Effects 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 53
- 230000003287 optical effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The embodiment of the invention provides a manufacturing method of a silicon-based display panel, the silicon-based display panel and an augmented reality device, and relates to the technical field of display. The manufacturing method of the silicon-based display panel comprises the following steps: providing a silicon-based back plate; depositing an insulating dielectric film on the silicon-based backboard; etching the insulating dielectric film, forming a curved surface groove on the insulating dielectric film, and exposing a connecting via hole in the silicon-based backboard; depositing an anode film layer on one side of the insulating dielectric film far away from the silicon-based backboard; and removing the part of the anode film layer between the adjacent curved surface grooves in a chemical mechanical polishing mode to form a plurality of anodes. The embodiment of the invention provides a manufacturing method of a silicon-based display panel, the silicon-based display panel and an augmented reality device, so as to increase the light extraction efficiency of the silicon-based display panel and simplify the manufacturing process of the silicon-based display panel.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to a method for manufacturing a silicon-based display panel, and an augmented reality device.
Background
Silicon-based display panels, such as Organic Light-Emitting Diode (OLED), are developed very rapidly due to their excellent characteristics of high brightness, rich colors, low driving voltage, fast response speed, low power consumption, etc. However, as the market demand for Virtual Reality (VR) and augmented Reality (Augmented Reality, AR) expands, the demand for high resolution, high brightness, high color gamut, micro-display devices is increasing. However, as the resolution of the device increases, the pixel geometry of the conventional planar anode structure is smaller and smaller, which objectively increases the optical crosstalk between adjacent pixels, and simultaneously reduces the brightness due to the reduction of the aperture ratio. More importantly, most of the light energy emitted by the device is limited in the organic layer due to the optical waveguide mode (about 50%) of the light emitting device, and the light energy is converted into heat energy on one hand, so that the temperature rise of the device is improved, the light extraction efficiency is reduced, and the brightness of the device is limited.
To improve the light extraction efficiency of the device, a light extraction layer, or microlens structure, is typically fabricated.
Disclosure of Invention
The embodiment of the invention provides a manufacturing method of a silicon-based display panel, the silicon-based display panel and an augmented reality device, so as to increase the light extraction efficiency of the silicon-based display panel and simplify the manufacturing process of the silicon-based display panel.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a silicon-based display panel, including:
providing a silicon-based back plate;
depositing an insulating dielectric film on the silicon-based backboard;
etching the insulating dielectric film, forming a curved surface groove on the insulating dielectric film, and exposing a connecting via hole in the silicon-based backboard;
depositing an anode film layer on one side of the insulating dielectric film far away from the silicon-based backboard;
and removing the part of the anode film layer between the adjacent curved surface grooves in a chemical mechanical polishing mode to form a plurality of anodes.
Optionally, after removing the portion of the anode film layer between the adjacent curved grooves by chemical mechanical polishing to form a plurality of anodes, the method further comprises:
etching the insulating dielectric film exposed between the adjacent curved surface grooves, and forming a separation groove on the insulating dielectric film.
Optionally, after etching the insulating dielectric film exposed between adjacent curved recesses and forming a partition groove on the insulating dielectric film, the method further includes:
sequentially forming an organic light-emitting layer and a cathode on one side of the silicon-based backboard, on which the anode is formed;
and forming a packaging layer, a flattening layer, a color resistor, a micro lens and a glass cover plate on the cathode in sequence.
Optionally, etching the insulating dielectric film exposed between adjacent curved recesses, and forming a isolation groove on the insulating dielectric film, including:
and etching the insulating dielectric film exposed between the adjacent curved surface grooves by adopting the processes of exposure, development and etching, and forming a separation groove on the insulating dielectric film.
Optionally, the insulating dielectric film is an inorganic insulating dielectric film; and/or, the connecting via hole is a tungsten hole.
In a second aspect, an embodiment of the present invention provides a silicon-based display panel formed by the manufacturing method of the first aspect, including:
a silicon-based back plate;
the insulating dielectric film is positioned on the silicon-based backboard and provided with a plurality of curved surface grooves, and connecting through holes in the silicon-based backboard are exposed in the curved surface grooves;
and at least part of the anodes are positioned in the curved surface grooves and are electrically connected with the connecting through holes.
Optionally, a separation groove is further formed on the insulating dielectric film, and the separation groove is located between two adjacent curved surface grooves.
Optionally, the curved surface groove includes a bottom surface and a side surface, the bottom surface is a plane, and the side surface is a curved surface.
Optionally, the organic light-emitting device further comprises an organic light-emitting layer, a cathode, an encapsulation layer, a planarization layer, a color resistor, a micro lens and a glass cover plate which are sequentially arranged along the direction away from the silicon-based back plate.
In a third aspect, an embodiment of the present invention provides an augmented reality device, including the silicon-based display panel according to the second aspect.
According to the manufacturing method of the silicon-based display panel provided by the embodiment of the invention, the insulating dielectric film is etched, the curved surface groove is formed on the insulating dielectric film, and the connecting via hole in the silicon-based backboard is exposed. And depositing an anode film layer on one side of the insulating dielectric film far away from the silicon-based backboard. And removing the part of the anode film layer between the adjacent curved surface grooves by a chemical mechanical polishing mode to form a plurality of anodes. Compared with the conventional process that the anode film layer is patterned by means of exposure, development and etching to form a plurality of separated anodes. The chemical mechanical polishing mode does not need exposure and optical alignment, so that the steps of the process are reduced, and the manufacturing difficulty is simplified. And avoids alignment errors during exposure. Thereby simplifying the manufacturing process of the silicon-based display panel.
Drawings
FIG. 1 is a flowchart of a method for fabricating a silicon-based display panel according to an embodiment of the present invention;
fig. 2 to 8 are schematic views illustrating a manufacturing process of a silicon-based display panel according to an embodiment of the present invention;
FIG. 9 is a flowchart of another method for fabricating a silicon-based display panel according to an embodiment of the present invention;
fig. 10 is a schematic view of a portion of another silicon-based display panel according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
Fig. 1 is a flowchart of a method for manufacturing a silicon-based display panel according to an embodiment of the present invention, and fig. 2 to 8 are schematic diagrams of a process for manufacturing a silicon-based display panel according to an embodiment of the present invention, and referring to fig. 1 to 6, the method for manufacturing a silicon-based display panel includes:
s101, providing a silicon-based backboard.
Referring to fig. 2, the silicon-based back plate 11 includes connection vias 22. A pixel driving circuit (not shown in fig. 2) and the like may also be provided in the silicon-based back plate 11. The pixel driving circuit is used for driving the pixels to emit light.
S102, depositing an insulating dielectric film on the silicon-based backboard.
Referring to fig. 3, an insulating dielectric film 12 is deposited on one side of a silicon-based back plate 11. The insulating dielectric film 12 may include one or more layers of organic films, or the insulating dielectric film 12 may include one or more layers of inorganic films, or the insulating dielectric film 12 may include one or more layers of organic and inorganic films.
Alternatively, the insulating dielectric film 12 is an inorganic insulating dielectric film, which is an inorganic film. The inorganic insulating dielectric film is resistant to high temperature and is easy to etch compared with the organic film. Is more suitable for the manufacturing process of the silicon-based display panel.
Illustratively, the insulating dielectric film 12 is one or a combination of SiOx, siNx, siON and the like.
S103, etching the insulating dielectric film, forming a curved surface groove on the insulating dielectric film, and exposing the connecting via hole in the silicon-based backboard.
Referring to fig. 4, the insulating dielectric film 12 is etched, a portion of the material in the insulating dielectric film 12 is removed, a curved recess 21 is formed on the insulating dielectric film 12, and a connection via 22 in the silicon-based back plate 11 is exposed. The process of etching the insulating dielectric film 12 and removing a portion of the material in the insulating dielectric film 12 may be dry etching and/or wet etching.
Wherein the curved surface groove 21 includes a curved surface, which may include at least one of an ellipsoid, a sphere, a paraboloid, and a hyperboloid.
Optionally, the connection via 22 is a tungsten hole.
S104, depositing an anode film layer on one side of the insulating dielectric film far away from the silicon-based backboard.
Referring to fig. 5, an anode film layer 130 is deposited on the insulating dielectric film 12. The anode film 130 covers the curved grooves 21 and the insulating dielectric film 12 between the adjacent curved grooves. The anode film 130 is electrically connected to the exposed connection via 22 so as to be connected to the pixel driving circuit in the silicon-based back plate 11.
And S105, removing the parts of the anode film layers between the adjacent curved surface grooves in a chemical mechanical polishing mode to form a plurality of anodes.
Wherein, chemical mechanical polishing is to realize the removal of micro-or nano-scale different materials by combining chemical action and mechanical grinding technology.
Referring to fig. 5 and 6, portions of the anode film layer 130 located between the adjacent curved recesses 21 are removed to form a plurality of anodes 13.
According to the manufacturing method of the silicon-based display panel provided by the embodiment of the invention, the insulating dielectric film is etched, the curved surface groove is formed on the insulating dielectric film, and the connecting via hole in the silicon-based backboard is exposed. And depositing an anode film layer on one side of the insulating dielectric film far away from the silicon-based backboard. And removing the part of the anode film layer between the adjacent curved surface grooves by a chemical mechanical polishing mode to form a plurality of anodes. Compared with the conventional process that the anode film layer is patterned by means of exposure, development and etching to form a plurality of separated anodes. The chemical mechanical polishing mode does not need exposure and optical alignment, so that the steps of the process are reduced, and the manufacturing difficulty is simplified. And avoids alignment errors during exposure. Thereby simplifying the manufacturing process of the silicon-based display panel.
It should be noted that, the anode adopted in the conventional process is a planar structure, not a curved structure. Thus, a film layer such as an organic light emitting layer formed over the anode constitutes an optical waveguide, affecting light extraction efficiency. In this application, the anode 13 formed in the curved surface groove 21 is a curved surface anode, and under the same horizontal pixel geometry, the effective luminous pixel area increases, meanwhile, due to the curved surface design of the anode 13, the light energy transmitted by the optical waveguide mode is reflected by the upper and lower interfaces in the organic luminous layer to change the light emitting angle, and finally escapes from the organic luminous layer at a proper angle, so that the limitation of the optical waveguide mode on the light emitting efficiency is finally reduced, thereby greatly improving the luminous efficiency, improving the brightness of the silicon-based display panel and reducing the temperature rise. On the other hand, the curved anode can play a role of condensing light, and optical crosstalk between adjacent pixels is reduced. Thereby improving the performance of the silicon-based display panel.
On the other hand, the anode adopted in the conventional process is of a planar structure, has no grooves or protrusions, is a flat film layer on the whole surface, and cannot naturally adopt a chemical mechanical polishing mode. In this application, the anode film layer 130 in the curved surface groove 21 is low, and the anode film layer 130 between the adjacent curved surface grooves 21 is high, so that the anode film layer 130 between the adjacent curved surface grooves 21 with higher positions can be polished by adopting a chemical mechanical polishing mode.
Fig. 9 is a flowchart of another method for manufacturing a silicon-based display panel according to an embodiment of the present invention, referring to fig. 2 to 9, based on the above embodiment, after step S105, the method for manufacturing a silicon-based display panel may further include:
s106, etching the insulating dielectric films exposed between the adjacent curved surface grooves, and forming isolation grooves on the insulating dielectric films.
Alternatively, referring to fig. 7, the insulating dielectric film 12 exposed between the adjacent curved recesses 21 may be etched using an exposing, developing, etching process, and the barrier grooves 23 may be formed on the insulating dielectric film 12.
And S107, sequentially forming an organic light-emitting layer and a cathode on one side of the silicon-based backboard, on which the anode is formed.
Referring to fig. 8, the organic light emitting layer 14 is formed on the side of the silicon-based back plate 11 where the anode 13 is formed, and the organic light emitting layer 14 may be formed by vapor deposition, for example. The organic light emitting layer 14 is cut at the position of the partition groove 23 so that the organic light emitting layers 14 in different pixels are not connected. Then, a cathode 15 is formed on the organic light emitting layer 14. The organic light emitting layer 14 emits light under the driving of the anode 13 and the cathode 15.
Wherein the anode 13, the organic light emitting layer 14 and the cathode 15 constitute a pixel.
S108, forming an encapsulation layer, a planarization layer, a color resistor, a micro lens and a glass cover plate on the cathode in sequence.
Referring to fig. 8, an encapsulation layer 16 is formed on the cathode 15, the encapsulation layer 16 serving to prevent the water oxygen from corroding the organic light emitting layer 14. A planarization layer 17 is formed on the encapsulation layer 16. A plurality of color resists 18 are formed on the planarizing layer 17. The color resist 18 is used to selectively filter light emitted from the organic light emitting layer 14, thereby realizing color display. A microlens 19 and a glass cover plate 20 are formed on the color resist 18. Among them, the micro lens 19 is used to improve light extraction efficiency.
In other embodiments, at least one of the encapsulation layer 16, the planarization layer 17, the color resist 18, and the microlenses 19 may be omitted, thereby realizing silicon-based display panels of other alternative structures.
The embodiment of the invention also provides a silicon-based display panel formed by the manufacturing method, and referring to fig. 8, the silicon-based display panel comprises a silicon-based back plate 11, an insulating dielectric film 12 and a plurality of anodes 13. The insulating dielectric film 12 is located on the silicon-based back plate 11, and the insulating dielectric film 12 is provided with a plurality of curved recesses 21, and connection vias 22 in the silicon-based back plate 11 are exposed in the curved recesses 21. At least part of the anode 13 is positioned in the curved groove 21, and the anode 13 is electrically connected with the connection via 22.
Optionally, referring to fig. 8, the silicon-based display panel further includes an organic light emitting layer 14, a cathode 15, an encapsulation layer 16, a planarization layer 17, a color resist 18, microlenses 19, and a glass cover plate 20, which are sequentially disposed in a direction away from the silicon-based back plate 11.
Optionally, referring to fig. 8, a separation groove 23 is further provided on the insulating dielectric film 12, and the separation groove 23 is located between adjacent curved grooves.
Illustratively, referring to fig. 8, three color resistors 18 are a first color resistor 181, a second color resistor 182, and a third color resistor 183, respectively. The first color resistor 181 is used to form light passing therethrough into red light, the second color resistor 182 is used to form light passing therethrough into green light, and the third color resistor 183 is used to form light passing therethrough into blue light.
Fig. 10 is a schematic view of a portion of another silicon-based display panel according to an embodiment of the present invention, and referring to fig. 10, the curved recess 21 includes a bottom surface 211 and a side surface 212. The bottom surface 211 is planar and the side surface 212 is curved. The bottom surface 211 is a plane, so that the depth of the curved surface groove 21 is reduced, and the manufacturing process difficulty of the curved surface groove 21 is reduced. On the other hand, due to the reduction in depth of the curved groove 21, the thickness of the finally formed silicon-based display panel can also be reduced. The side surface 212 is curved, so that the limitation of the light extraction efficiency of the light waveguide mode can be reduced by using the side surface 212 of the curved surface groove 21, and the curved surface anode can play a role of condensing, so that the optical crosstalk between adjacent pixels is reduced. The embodiment combines the light-emitting efficiency of the silicon-based display panel and the thickness of the silicon-based display panel.
The embodiment of the invention also provides an augmented reality device, which comprises the silicon-based display panel in the embodiment. The augmented reality device may be, for example, a virtual reality device or an augmented reality device.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements, combinations, and substitutions can be made by those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (10)
1. A method for manufacturing a silicon-based display panel, comprising:
providing a silicon-based back plate;
depositing an insulating dielectric film on the silicon-based backboard;
etching the insulating dielectric film, forming a curved surface groove on the insulating dielectric film, and exposing a connecting via hole in the silicon-based backboard;
depositing an anode film layer on one side of the insulating dielectric film far away from the silicon-based backboard;
and removing the part of the anode film layer between the adjacent curved surface grooves in a chemical mechanical polishing mode to form a plurality of anodes.
2. The method of claim 1, wherein after removing portions of the anode film layer between adjacent ones of the curved grooves by chemical mechanical polishing to form a plurality of anodes, further comprising:
etching the insulating dielectric film exposed between the adjacent curved surface grooves, and forming a separation groove on the insulating dielectric film.
3. The method of claim 2, further comprising, after etching the insulating dielectric film exposed between adjacent curved recesses and forming a separation groove on the insulating dielectric film:
sequentially forming an organic light-emitting layer and a cathode on one side of the silicon-based backboard, on which the anode is formed;
and forming a packaging layer, a flattening layer, a color resistor, a micro lens and a glass cover plate on the cathode in sequence.
4. The method of claim 2, wherein etching the insulating dielectric film exposed between adjacent curved recesses to form isolation trenches on the insulating dielectric film, comprises:
and etching the insulating dielectric film exposed between the adjacent curved surface grooves by adopting the processes of exposure, development and etching, and forming a separation groove on the insulating dielectric film.
5. The method according to claim 1, wherein the insulating dielectric film is an inorganic insulating dielectric film; and/or, the connecting via hole is a tungsten hole.
6. A silicon-based display panel formed by the fabrication method of claim 1, comprising:
a silicon-based back plate;
the insulating dielectric film is positioned on the silicon-based backboard and provided with a plurality of curved surface grooves, and connecting through holes in the silicon-based backboard are exposed in the curved surface grooves;
and at least part of the anodes are positioned in the curved surface grooves and are electrically connected with the connecting through holes.
7. The silicon-based display panel according to claim 6, wherein the insulating dielectric film is further provided with a partition groove, and the partition groove is located between adjacent curved recesses.
8. The silicon-based display panel of claim 6, wherein the curved recess comprises a bottom surface and a side surface, the bottom surface being planar and the side surface being curved.
9. The silicon-based display panel of claim 6, further comprising an organic light emitting layer, a cathode, an encapsulation layer, a planarization layer, a color resist, a microlens, and a glass cover plate sequentially disposed in a direction away from the silicon-based back plate.
10. An augmented reality device comprising a silicon-based display panel as claimed in any one of claims 6 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311727425.8A CN117693252A (en) | 2023-12-14 | 2023-12-14 | Manufacturing method of silicon-based display panel, silicon-based display panel and augmented reality device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311727425.8A CN117693252A (en) | 2023-12-14 | 2023-12-14 | Manufacturing method of silicon-based display panel, silicon-based display panel and augmented reality device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117693252A true CN117693252A (en) | 2024-03-12 |
Family
ID=90129839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311727425.8A Pending CN117693252A (en) | 2023-12-14 | 2023-12-14 | Manufacturing method of silicon-based display panel, silicon-based display panel and augmented reality device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117693252A (en) |
-
2023
- 2023-12-14 CN CN202311727425.8A patent/CN117693252A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6984934B2 (en) | Micro-lens arrays for display intensity enhancement | |
| US11289669B2 (en) | Light-emitting device, pixel unit, manufacturing method for pixel unit and display device | |
| KR101988217B1 (en) | Oled micro-cavity structure and method of making | |
| KR100805141B1 (en) | Organic el device manufacturing method and organic el device | |
| CN109390372B (en) | Pixel structure, forming method thereof and display screen | |
| CN101677107A (en) | Layered semiconductor light emitting device and image forming apparatus | |
| JP7339432B2 (en) | Display device, manufacturing method thereof, drive substrate | |
| JP2019179716A (en) | Organic electroluminescent display device, method of manufacturing organic electroluminescent display device, and nanoimprint mold | |
| WO2022134427A1 (en) | Display substrate and manufacturing method therefor, and three-dimensional display device | |
| CN116230733B (en) | Micro LED chip and preparation method thereof | |
| CN117693252A (en) | Manufacturing method of silicon-based display panel, silicon-based display panel and augmented reality device | |
| JP7481368B2 (en) | Display panel and display device | |
| WO2020192345A1 (en) | Display substrate, manufacturing method thereof, and display device | |
| CN114759074A (en) | Display device and manufacturing method thereof | |
| CN110165088B (en) | Preparation method of OLED device | |
| TWI838712B (en) | Micro-led displays to reduce subpixel crosstalk and methods of manufacture | |
| CN116722082B (en) | Preparation method of array substrate, array substrate and display panel | |
| CN113644211B (en) | Display panel, preparation method thereof and display device | |
| CN117832367A (en) | Display panel and display device | |
| CN116171078A (en) | Display substrate preparation method, display substrate and display device | |
| KR100768714B1 (en) | Method for fabricating oled display device | |
| CN116669464A (en) | Display panel and display device | |
| CN114759075A (en) | Display device and manufacturing method thereof | |
| JP2023553851A (en) | Micro LED beam collimation | |
| KR20240109181A (en) | Organic light emitting display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |