CN117690916A - Light-emitting panel and electronic equipment - Google Patents

Light-emitting panel and electronic equipment Download PDF

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Publication number
CN117690916A
CN117690916A CN202211021937.8A CN202211021937A CN117690916A CN 117690916 A CN117690916 A CN 117690916A CN 202211021937 A CN202211021937 A CN 202211021937A CN 117690916 A CN117690916 A CN 117690916A
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light
color conversion
layer
light emitting
emitting
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杨磊
杨以娜
张利
赵钰
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Abstract

The embodiment of the application provides a light-emitting panel and electronic equipment. The light-emitting panel comprises a substrate and a plurality of light-emitting pixels positioned on one side of the substrate; the light emitting pixel includes a light emitting device; at least part of the light emitting pixels further comprise a color conversion structure, wherein the color conversion structure is positioned on one side of the light emitting device away from the substrate; the color conversion structure includes a main functional layer including a structure in which color conversion layers and dielectric layers are alternately stacked, and refractive indexes of the color conversion layers and the dielectric layers are different. The color conversion efficiency can be improved, and the luminous efficiency of the luminous pixel can be improved.

Description

Light-emitting panel and electronic equipment
Technical Field
The invention belongs to the technical field of display, and particularly relates to a light-emitting panel and electronic equipment.
Background
Currently, the mainstream display technology includes liquid crystal display technology and organic self-luminous display technology. With the development of LED (light-emitting diode) technology, micro-LEDs and Mini LEDs are also applied in the display field, and the Micro-LEDs and Mini LEDs are used as light-emitting pixels in the display. Wherein, the Micro-LED is a micron-sized LED, and the Mini LED is an LED with the chip size of 50-200 mu m. In addition, the LED can be applied not only to a conventional display device, but also to an AR (Augmented Reality ) or VR (Virtual Reality) field as a new display technology. Taking the Micro-LED display technology as an example, in order to realize full-color display, micro-LEDs emitting red, green and blue colors are required to be arranged, and the light emitting materials in the LEDs with different colors are different, so that the light emitting efficiency of the LEDs is also different. The luminous efficiency of the existing red light Micro LED device is too low, and the application of the Micro LED is affected.
Disclosure of Invention
In view of this, the present application provides a light emitting panel and an electronic device, so as to solve the technical problem that the light emitting efficiency of the light emitting pixel in the prior art is low and affects the application.
In a first aspect, embodiments of the present application provide a light emitting panel including a substrate and a plurality of light emitting pixels located on one side of the substrate; the light emitting pixel includes a light emitting device; wherein at least part of the light emitting pixels further comprise a color conversion structure, the color conversion structure being located at a side of the light emitting device remote from the substrate; the color conversion structure includes a main functional layer including a structure in which color conversion layers and dielectric layers are alternately stacked, and refractive indexes of the color conversion layers and the dielectric layers are different. The thickness of the color conversion layer, the thickness of the medium layer, the refractive index of the color conversion layer, the refractive index of the medium layer and the stacking layer number of the color conversion layer and the medium layer are set in cooperation with the center wavelength of the base light and the center wavelength of the target light, so that the reflectivity of the base light can be improved, the transmissivity of the target light can be ensured, a structure for transmitting the target light and reflecting the base light is formed, the color conversion structure has high reflectivity for the base light emitted by the light emitting device, and the base light can be concentrated in the color conversion layer for use, so that the color conversion efficiency is improved. The color conversion layers and the dielectric layers are alternately stacked, so that energy transfer and reabsorption among the color conversion materials can be reduced, the utilization rate of target light is improved, and the luminous efficiency of the luminous pixel can be improved. In addition, the color conversion layer and the dielectric layer are alternately stacked, and the dielectric layer is equivalent to a periodic water oxygen barrier layer of the color conversion layer, so that the stability of the color conversion layer can be greatly improved.
In some embodiments, at least a portion of the light emitting pixels further comprise a planarization layer, the planarization layer being located between the color conversion structure and the light emitting device. The flat layer can provide a relatively flat surface and also can play a role of blocking water and oxygen so as to protect the color conversion layer manufactured later; the flat layer can be used for physically isolating the light-emitting device and the color conversion material, and preventing the stability of the color conversion material from being influenced by the working overheat of the light-emitting device.
In some embodiments, the color conversion structure further comprises a spectral modulation layer; the spectral modulation layer is located on a side of the main functional layer close to the light emitting device and/or on a side of the main functional layer remote from the light emitting device. The spectrum modulation layer can adjust the equivalent refractive index of the color conversion structure, and then adjust the admittance of the color conversion structure to destroy the oscillation passband ripple of the transmission spectrum corresponding to the color conversion structure. The spectrum modulation layer is equivalent to an antireflection film layer at the film boundary position of the main functional layer, can destroy oscillatory passband ripple, improve the transmissivity of the passband, and improve the smoothness of the transmission spectrum, thereby improving the luminous performance of the luminous pixel.
In some embodiments, the spectral modulation layer comprises at least one first modulation layer, the material of the first modulation layer being the same as the material of the color conversion layer; and/or the spectrum modulation layer comprises at least one second modulation layer, and the material of the second modulation layer is the same as that of the dielectric layer. The first modulation layer is equivalent to an antireflection film layer interposed between the main functional layer and the flat layer, and can adjust the equivalent refractive index of the color conversion structure so that the equivalent refractive index of the color conversion structure is matched with the refractive index of the substrate below the color conversion structure and the medium above the color conversion structure, thereby being capable of destroying passband ripple of the transmission spectrum of the color conversion structure. The second modulation layer is equivalent to an antireflection film layer interposed between the main functional layer and the medium above the main functional layer, and the second modulation layer can also adjust the equivalent refractive index of the color conversion structure so that the equivalent refractive index of the color conversion structure matches the refractive index of the substrate below the color conversion structure and the medium above the color conversion structure. The first modulation layer and/or the second modulation layer in the application can destroy passband ripple of the transmission spectrum of the color conversion structure, and improve the smoothness of the transmission spectrum, so that the luminous performance of the luminous pixel can be improved.
In some embodiments, the thickness of the first modulation layer is less than the thickness of the color conversion layer. This arrangement can balance the reflectance of the color conversion structure to the base light and the transmittance to the target light so that the color conversion structure has a high reflectance to the base light and a high transmittance to the target light.
In some embodiments, in a light emitting pixel comprising a color conversion structure: the refractive index of the color conversion layer is n 1 The thickness of the color conversion layer is d 1 The refractive index of the dielectric layer is n 2 The thickness of the dielectric layer is d 2 Wherein n is 1 *d 1 ＝n 2 *d 2 . The arrangement is such that the interference condition of the same light after being reflected by the medium layer is basically the same as that of the light after being reflected by the color conversion layer, and the light can form periodic interference after being injected into the color conversion structure.
In some embodiments, the color conversion layer has a thickness d 1 ，10nm≤d 1 And the wavelength is less than or equal to 500nm. The thickness of the color conversion layer is thinner, which is beneficial to uniformity of the color conversion layer into a film.
In some embodiments, the thickness of each dielectric layer in the main functional layer is equal. By the arrangement, the reflection rule of each medium layer on the basic light can be guaranteed to be consistent, so that the color conversion structure has high reflectivity on the basic light, and in theory, the more the lamination period is, the larger the reflectivity of the color conversion structure is. And the process conditions are the same when the dielectric layers are manufactured, so that the process can be simplified.
In some embodiments, the color conversion layer includes a first color conversion layer that emits a first color light upon excitation by light; the thickness of each first color conversion layer in the main functional layer is the same. This embodiment enables the light emitting pixel to emit light of a single color.
In some embodiments, at least a portion of the color conversion layers in the light emitting pixels further comprise a second color conversion layer that emits a second color light upon excitation by light; the thickness of each second color conversion layer in the main functional layer is the same. By providing the color conversion materials in the first color conversion layer and the second color conversion layer, emission of the composite light by the light emitting pixel can be achieved. For example, to enable the light emitting pixels to emit white light.
In some embodiments, at least a portion of the color conversion layers in the light emitting pixel further comprise third color conversion layers that emit third color light upon excitation by light, each third color conversion layer having the same thickness in the primary functional layer. By disposing the color conversion materials in the first color conversion layer, the second color conversion layer, and the third color conversion layer, emission of the composite light by the light-emitting pixel can be achieved. For example, to enable the light emitting pixels to emit white light.
In some embodiments, the color conversion layer comprises a fourth color conversion layer comprising at least two color conversion materials that emit different colors of light upon excitation.
In some embodiments, the light emitting pixels comprise red light emitting pixels comprising color converting structures; wherein the light emitting device in the red light emitting pixel emits blue light or green light.
In some embodiments, the light emitting pixels comprise red light emitting pixels and green light emitting pixels, each comprising a color conversion structure; the light emitting devices in the red light emitting pixel and the green light emitting pixel both emit blue light.
In some embodiments, the light emitting pixels comprise white light emitting pixels comprising color converting structures;
the light emitting device in the white light emitting pixel emits blue light or the light emitting device in the white light emitting pixel emits ultraviolet light.
In a second aspect, based on the same inventive concept, embodiments of the present application further provide an electronic device, including the light emitting panel provided in any embodiment of the present application.
The luminous panel and the electronic equipment provided by the application have the following beneficial effects: at least part of the light-emitting pixels in the light-emitting panel comprise a color conversion structure, and the color conversion structure is positioned on the light-emitting side of the light-emitting device. The main functional layer in the color conversion structure includes color conversion layers and dielectric layers alternately stacked, and refractive indices of the color conversion layers and the dielectric layers are different. The thickness of the color conversion layer, the thickness of the medium layer, the refractive index of the color conversion layer, the refractive index of the medium layer and the stacking layer number of the color conversion layer and the medium layer are set in cooperation with the center wavelength of the base light and the center wavelength of the target light, so that the reflectivity of the base light can be improved, the transmissivity of the target light can be ensured, a structure for transmitting the target light and reflecting the base light can be formed, the color conversion structure has high reflectivity for the base light emitted by the light emitting device, the base light can be concentrated in the color conversion layer for use, the color conversion efficiency is improved, and the thickness of the required color conversion layer is reduced. The color conversion layers and the dielectric layers are alternately stacked, so that energy transfer and reabsorption among the color conversion materials can be reduced, the utilization rate of target light is improved, and the luminous efficiency of the luminous pixel can be improved. In addition, the color conversion layer and the dielectric layer are alternately stacked, and the dielectric layer is equivalent to a periodic water oxygen barrier layer of the color conversion layer, so that the stability of the color conversion layer can be greatly improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it will be obvious that the drawings in the following description are some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort to a person skilled in the art.
Fig. 1 is a schematic view of a light-emitting panel according to an embodiment of the present disclosure;
fig. 2 is a schematic view of a light-emitting pixel structure in a light-emitting panel according to an embodiment of the present application;
FIG. 3 is a simplified schematic diagram of the light path principle in the color conversion structure according to the embodiment of the present application;
fig. 4 is a schematic view of a light-emitting pixel structure in another light-emitting panel according to an embodiment of the present disclosure;
fig. 5 is a schematic view of a light-emitting pixel structure in another light-emitting panel according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram of a light-emitting pixel in another light-emitting panel according to an embodiment of the present disclosure;
FIG. 7 is a schematic diagram of a transmission spectrum of the color conversion structure in the embodiment of FIG. 6;
FIG. 8 is a schematic diagram of a light-emitting pixel in another light-emitting panel according to an embodiment of the present disclosure;
FIG. 9 is a schematic diagram of a transmission spectrum of the color conversion structure in the embodiment of FIG. 8;
FIG. 10 is a schematic diagram of a light-emitting pixel in another light-emitting panel according to an embodiment of the present disclosure;
FIG. 11 is a schematic diagram of a transmission spectrum of the color conversion structure in the embodiment of FIG. 10;
FIG. 12 is a simplified schematic diagram of another light-emitting panel according to an embodiment of the present disclosure;
FIG. 13 is a schematic view of a light-emitting pixel in another light-emitting panel according to an embodiment of the present disclosure;
FIG. 14 is a schematic view of a transmission spectrum of the color conversion structure of the embodiment of FIG. 13;
FIG. 15 is a simplified schematic diagram of another light-emitting panel according to an embodiment of the present disclosure;
FIG. 16 is a schematic view of a light-emitting pixel in another light-emitting panel according to an embodiment of the present disclosure;
FIG. 17 is a schematic view of a transmission spectrum of the color conversion structure of the embodiment of FIG. 16;
FIG. 18 is a schematic diagram of a light-emitting pixel in another light-emitting panel according to an embodiment of the present disclosure;
FIG. 19 is a schematic view of a light-emitting pixel in another light-emitting panel according to an embodiment of the present disclosure;
FIG. 20 is a schematic view of a light-emitting pixel in another light-emitting panel according to an embodiment of the present disclosure;
FIG. 21 is a schematic view of a light-emitting pixel in another light-emitting panel according to an embodiment of the present disclosure;
FIG. 22 is a schematic view of a transmission spectrum of the color conversion structure of FIG. 21;
FIG. 23 is a simplified schematic diagram of another light-emitting panel according to an embodiment of the present disclosure;
FIG. 24 is a simplified schematic diagram of another light-emitting panel according to an embodiment of the present disclosure;
fig. 25 is a flowchart of a method for manufacturing a light-emitting panel according to an embodiment of the present application;
fig. 26 is a flowchart of a manufacturing method of another light-emitting panel according to an embodiment of the present application;
fig. 27 is a schematic diagram of an electronic device according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
In the prior art, the photoelectric conversion efficiency of AlInGaP/GaAs-based red LEDs is <1%, while gallium nitride-based red LEDs are expected to achieve higher photoelectric conversion efficiencies. However, current gallium nitride-based red LEDs have a very broad FWHM (Full width at half maximum ) due to the QCSE effect (quantum confinement stark effect) of the red gallium nitride quantum well caused by the In content of InGaN exceeding 30%. The light filtering structure is needed to reduce FWHM and improve color purity, and the light emitting efficiency of the red LED is obviously reduced by the light filtering structure, so that the luminous efficiency of the red LED is reduced.
In one prior art, in order to increase the luminous efficiency of a red light emitting pixel, a blue LED and a red light quantum dot color conversion layer are integrated to prepare a red LED device. And the red light quantum dot color conversion layer has thicker thickness and the uniformity is difficult to control. For example, when a red light quantum dot color conversion layer is manufactured by adopting dripping-volatilizing (or ink-jet printing), a coffee ring effect is easy to appear, and the uniformity of the film thickness of the color conversion layer is influenced. For example, when a polymer spin coating film forming process is adopted, quantum dots are mixed in a polymer matrix, and although the thickness and film forming uniformity of a color conversion layer can be controlled, the solution stability of the quantum dots in the polymer matrix is poor, and the quantum dots are easy to aggregate and precipitate to generate quantum dot aggregation clusters, so that the distribution uniformity of the quantum dots in the color conversion layer is influenced, and the light emitting uniformity of a device is further influenced. And the solubility of the quantum dots in the polymer matrix is limited, so that the high-concentration quantum dot doping in the polymer matrix can be realized by complex ligand adjustment on the surface of the quantum dots. The concentration and stability of the quantum dots can affect the light absorption efficiency and color conversion efficiency of the color conversion layer for light (such as blue light). That is, in the prior art, in order to achieve high color conversion efficiency and improve luminous efficiency, a high requirement is placed on a manufacturing process of the color conversion layer.
In order to solve the problems existing in the prior art, the application provides a light-emitting panel, in which a color conversion structure is arranged in at least part of light-emitting pixels, the color conversion structure is located on the light-emitting side of a light-emitting device, the color conversion structure comprises a structure in which color conversion layers and medium layers are alternately stacked, and the refractive indexes of the color conversion layers and the medium layers are different. Light can be reflected on the interface between the medium layer and the color conversion layer, the whole transmission spectrum property and reflection spectrum property of the color conversion structure can be regulated and controlled by adjusting the refractive index difference of the medium layer and the color conversion layer and setting the thickness of the medium layer and the thickness of the color conversion layer, the color conversion efficiency is improved, and the whole luminous efficiency of the luminous pixel can be improved.
Fig. 1 is a schematic view of a light-emitting panel provided in an embodiment of the present application, and fig. 2 is a schematic view of a light-emitting pixel structure in a light-emitting panel provided in an embodiment of the present application. Fig. 1 is a simplified illustration of a light emitting panel, as shown in fig. 1, comprising a substrate 10 and a plurality of light emitting pixels 20 located on one side of the substrate 10; a driving layer 40 is further provided between the substrate 10 and the light emitting pixels 20, and a pixel circuit for driving the light emitting pixels 20 to emit light is provided in the driving layer 40. The light emitting pixel 20 includes a light emitting device 21; the light emitting device 21 is an organic light emitting diode or an inorganic light emitting diode. In some embodiments, the light emitting device 21 is a Micro-LED or Mini LED.
Wherein at least part of the light emitting pixels 20 further comprise a color converting structure 22, the color converting structure 22 being located at a side of the light emitting device 21 remote from the substrate 10.
As shown in fig. 2, the color conversion structure 22 includes a main functional layer 221, and the main functional layer 221 includes a structure in which color conversion layers 31 and dielectric layers 32 are alternately stacked, wherein the refractive index of the color conversion layers 31 and the refractive index of the dielectric layers 32 are different. That is, one of the color conversion layer 31 and the dielectric layer 32 is a high refractive index layer, and the other is a low refractive index layer. The main functional layer 221 in the present application is a structure in which high-refraction/low-refraction layers are alternately stacked, and the main functional layer 221 is equivalent to a distributed bragg reflector. The color conversion structure 22 has a color conversion function capable of converting light of a base color incident on the color conversion structure 22 into light of one or more other colors, and the main film layer capable of realizing the color conversion function is the color conversion layer 31. The color conversion layer 31 includes a color conversion material that emits light of a specific color upon excitation by light. The color conversion material comprises fluorescent powder, organic luminescent material, quantum dot material and the like.
The specific magnitude relation between the refractive index of the color conversion layer 31 and the refractive index of the dielectric layer 32 is not limited, and alternatively, the refractive index of the color conversion layer 31 is 1.7 to 2.5 (inclusive), and the refractive index of the dielectric layer 32 is 1.2 to 3 (inclusive). In some embodiments, the refractive index of color conversion layer 31 is greater than the refractive index of dielectric layer 32; in other embodiments, the refractive index of the dielectric layer 32 is greater than the refractive index of the color conversion layer 31.
In the light emitting pixel 20 including the color conversion structure 22, light emitted from the light emitting device 21 is defined as base light, and light emitted after the color conversion layer 31 is excited is defined as target light. The color of the base light and the color of the target light are different.
Taking the basic light as blue light and the target light as red light as an example, the light emitted from the light emitting device 21 is blue light, and the color conversion layer 31 in the main functional layer 221 is excited to emit red light. The color conversion structure 22 is located on the light emitting side of the light emitting device 21, and the base light emitted from the light emitting device 21 is first irradiated into the color conversion structure 22.
Fig. 3 is a simplified schematic diagram of the light path principle in the color conversion structure in the embodiment of the present application. Fig. 3 schematically illustrates an nth color conversion layer 31_n, an nth dielectric layer 32_n, an n+1th color conversion layer 31_n+1, an n+1th dielectric layer 32_n+1, n being an integer of 1 or more, stacked over the light emitting device 21. As shown in fig. 3, the blue light S (i.e., the base light) irradiates the nth color conversion layer 31—n, and a portion of the blue light is absorbed by the nth color conversion layer 31—n, and the nth color conversion layer 31—n excites and emits red light (i.e., the target light) after absorbing the blue light. And part of the blue light penetrates through the n-th color conversion layer 31_n and then enters the n-th dielectric layer 32_n. As shown in fig. 3, blue light not absorbed by the nth color conversion layer 31—n is reflected at the interface between the nth color conversion layer 31—n and the nth dielectric layer 32—n, resulting in reflected light S1. The blue light beam incident into the n-th dielectric layer 32—n is reflected at the interface between the n-th dielectric layer 32—n and the n+1th color conversion layer 31—n+1, and reflected light S2 is obtained. Blue light emitted from the n+1th color conversion layer 31_n+1 to the n+1th dielectric layer 32_n+1 is reflected at the interface between the two layers, and reflected light S3 is obtained. Due to the difference in refractive index between the color conversion layer 31 and the dielectric layer 32, blue light is reflected when it impinges on any interface between the color conversion layer 31 and the dielectric layer 32.
Light is reflected at the interface location as it passes through the different media, and the magnitude of the reflectivity is related to the magnitude of the refractive index between the different media. As used in this application, the magnitude of the refractive index between the color conversion layer 31 and the dielectric layer 32 affects the reflectivity of the base light reflected at the interface between the two. The refractive index of the color conversion layer 31 and the dielectric layer 32 can be adjusted to adjust the reflectance of the base light so that the base light is more reflected and confined in the color conversion layer 31.
In addition, the thickness d of the dielectric layer 32 is adjusted 2 Can be used forBy adjusting the optical path difference between the reflected light S1 and the reflected light S2, the interference condition between the reflected light S1 and the reflected light S2 can be adjusted, so that the interference cancellation of the blue light reflected light can be reduced, and the blue light reflected light can be correspondingly enhanced. Likewise, the thickness d of the color conversion layer 31 is adjusted 1 The optical path difference between the reflected light S2 and the reflected light S3 can be adjusted, so that the interference condition between the reflected light S2 and the reflected light S3 can be adjusted, interference cancellation of the blue light reflected light can be reduced, and the blue light reflected light can be correspondingly enhanced. It can be seen that the reflectance of blue light is related not only to the refractive indices of the color conversion layer 31 and the dielectric layer 32, but also to the thickness d of the color conversion layer 31 1 Thickness d of dielectric layer 32 2 And (5) correlation. In view of stacking one color conversion layer 31 and one dielectric layer 32 as one period, as the number of stacked periods in the main functional layer 221 increases, the main functional layer 221 forms a periodic high reflection structure, and a high reflection band with a bandwidth of 2×Δg is formed in the transmission spectrum.
Wherein n is H For high refractive index in the color conversion layer 31 and the dielectric layer 32, n L Is a low refractive index in the color conversion layer 31 and the dielectric layer 32. The wavelength range in the high reflection band is lambda 0 /(1+Δg)～λ 0 /(1-Δg)，λ 0 Is the center wavelength of the base light. In the transmission spectrum, the reflectance on both sides of the high reflection band drops steeply to approximately 0. Therefore, the color conversion layers 31 and the dielectric layers 32 are alternately stacked, and the thicknesses of the color conversion layers 31 and the dielectric layers 32 are set, so that the obtained main functional layer 221 corresponds to a cut-off filter structure for a specific wavelength, and a high reflectance to the base light can be realized. For example, the main functional layer 221 has a high reflectance to blue light, and thus can absorb and use more blue light in the color conversion layer 31.
Fig. 3 shows the case where the fundamental light emitted from the light emitting device 21 is reflected at each interface, and the color conversion layer 31 absorbs the fundamental light and excites the target light of the corresponding quantum dot material emitted from the designed main functional layer 221 Spectral range lambda 0 /(1+Δg)～λ 0 Outside the range/(1- Δg) (i.e., corresponding to the target wavelength of light)>λ 0 /(1- Δg)). It can be understood that the center wavelength of the base light and the center wavelength of the target light are different if the color of the base light and the color of the target light are different. The reflectivity of light at the interface is related not only to the refractive index of the medium on both sides of the interface, but also to the wavelength of the light. That is, when the refractive indices of the color conversion layer 31 and the dielectric layer 32 are determined, the reflectance of the target light at the interface where the two (the color conversion layer 31 and the dielectric layer 32) are in contact is different from the reflectance of the base light at the interface where the two are in contact, and by adjusting the refractive indices of the color conversion layer 31 and the dielectric layer 32, the reflection of the target light at the interface between the color conversion layer 31 and the dielectric layer 32 can be reduced to improve the transmittance of the target light. In addition, although the base light and the target light are reflected at the two interfaces adjacent to each other, the interference of the two reflected lights of the target light and the interference of the two reflected lights of the base light are different due to the difference in the center wavelengths of the target light and the base light. By adjusting the thickness d of the color-converting layer 31 1 And thickness d of dielectric layer 32 2 The interference condition of the reflected light of the target light can be adjusted, and the reflection of the target light can be weakened by increasing the interference cancellation of the reflected light of the target light, and the transmissivity of the target light is correspondingly increased. That is, by adjusting the thickness d of the color conversion layer 31 1 And thickness d of dielectric layer 32 2 The refractive index of the color conversion layer 31 and the refractive index of the dielectric layer 32 are combined with the design of the stacking cycle number of the color conversion layer 31 and the dielectric layer 32 to match the central wavelength of the basic light and the central wavelength of the target light, so that the reflectivity of the basic light can be improved and the transmissivity of the target light can be ensured to be balanced, the color conversion structure 22 has high reflectivity for the basic light, the color conversion efficiency is improved, and meanwhile, the color conversion structure 22 has high transmissivity for the target light and the luminous efficiency of the luminous pixel is improved.
The embodiment provides a light-emitting panel, in which at least part of light-emitting pixels include a color conversion structure 22, and the color conversion structure 22 is located on a light-emitting side of a light-emitting device 21. The main functional layer 221 in the color conversion structure 22 includes an intersectionThe color conversion layer 31 and the dielectric layer 32 are stacked alternately, and the refractive indices of the color conversion layer 31 and the dielectric layer 32 are different. Thickness d of color conversion layer 31 in accordance with the center wavelength of the base light and the center wavelength of the target light 1 And thickness d of dielectric layer 32 2 The refractive index of the color conversion layer 31, the refractive index of the dielectric layer 32, and the number of stacked layers of the color conversion layer 31 and the dielectric layer 32 are set, so that the reflectivity of the basic light can be improved and the transmissivity of the target light can be ensured, and a structure for transmitting the target light and reflecting the basic light can be formed, so that the color conversion structure 22 has high reflectivity for the basic light emitted by the light emitting device 21, the basic light can be concentrated in the color conversion layer 31 for use, the color conversion efficiency can be improved, and the layer thickness of the color conversion structure 22 required by the complete color conversion of the basic light can be reduced. The provision of the alternate stacking of the color conversion layers 31 and the dielectric layers 32 can also reduce energy transfer between the color conversion materials and reabsorption of the target light, and improve the utilization ratio of the target light, that is, the luminous efficiency of the luminous pixel 20.
In addition, in the present application, the color conversion layer 31 and the dielectric layer 32 are alternately stacked, and the dielectric layer 32 serves as a periodic water-oxygen barrier layer of the color conversion layer 31, so that the stability of the color conversion layer 31 can be greatly improved.
In some embodiments, the refractive index of the color conversion layer 31 is n 1 The thickness of the color conversion layer 31 is d 1 The refractive index of the dielectric layer 32 is n 2 The thickness of the dielectric layer 32 is d 2 Wherein n is 1 *d 1 ＝n 2 *d 2 . When light enters the color conversion layer 31 along the direction perpendicular to the color conversion layer 31, the light is reflected at the upper and lower interfaces of the color conversion layer 31, and the optical path difference of the two reflected lights is n 1 *d 1 The method comprises the steps of carrying out a first treatment on the surface of the When light enters the dielectric layer 32 along the direction perpendicular to the dielectric layer 32, the light will be reflected at the upper and lower interfaces of the dielectric layer 32, and the optical path difference of the two reflected lights is n 2 *d 2 . While the optical path difference of the reflected light affects the interference condition between the reflected light, n is set 1 *d 1 ＝n 2 *d 2 So that the same light is substantially phase-interfered after being reflected by the medium layer 32 and after being reflected by the color conversion layer 31Also, the light rays can be made to interfere periodically after entering the color conversion structure 22. For the base light, reducing interference cancellation of reflected light of the base light to enhance reflection of the base light; for the target light, interference cancellation of reflected light of the target light is increased to enhance transmission of the target light. At the satisfaction of n 1 *d 1 ＝n 2 *d 2 Thickness d of color conversion layer 31 1 And thickness d of dielectric layer 32 2 The refractive index of the color conversion layer 31 and the refractive index of the dielectric layer 32 are designed so that the color conversion structure 22 has a high reflectance for the base light and a high transmittance for the target light.
In some embodiments, n 1 *d 1 ＝n 2 *d 2 ＝λ 0 /4. This arrangement enables the color conversion structure 22 to have a high reflectance for the base light while having a high transmittance for the target light.
In the prior art, taking the example of manufacturing a color conversion layer by using quantum dots, the quantum dots are usually dissolved in a polymer matrix, and the thickness of the whole manufactured color conversion layer is thicker, generally more than 3-5 μm, and some color conversion layers can also have a thickness of more than 10 μm. Whereas the thickness of the single color conversion layer 31 in the present application is much thinner than in the prior art.
In some embodiments, the thickness of the color conversion layer 31 is d1, 10 nm.ltoreq.d 1 And the wavelength is less than or equal to 500nm. The thickness of the color conversion layer 31 is thinner in the present application, which is advantageous for film formation uniformity of the color conversion layer 31. Alternatively, in the embodiment of the present application, the color conversion layer 31 is manufactured by using a solution spin-coating process, the color conversion material is dispersed in a volatilizable solvent to form a color conversion material solution, the color conversion material solution is manufactured on the dielectric layer 32 by using a spin-coating process, and the color conversion material remained after the solvent volatilizes forms the ultrathin color conversion layer 31. The method can improve the film forming uniformity and stability of the single-layer color conversion layer 31 and improve the yield of the film forming process.
Optionally, in order to meet different design requirements, in some embodiments, d is provided 1 And the wavelength is less than or equal to 200nm. In some embodiments, d 1 ≤100nm。
The color conversion layer 31 in this application includes a color conversion material, which may be phosphor, organic luminescent material, or quantum dot. The quantum dot material includes, but is not limited to, core-shell structure or alloy structure quantum dots formed by CdSe, cdS, znSe, znS, inP, cdTe, znTe, agInGaS and combinations thereof, such as core-shell quantum dots of CdSe/CdS, cdSe/ZnSe, cdS/ZnS, inP/ZnSe, znSe/ZnS, cdSe/CdS/ZnS, inP/GaP and the like, and alloy quantum dots of ZnCdSe/ZnSe, cdSeS, znCdS, znCdSe/ZnS, agInGaS/ZnS and the like, and the quantum dot material adopted in the manufacturing process comprises three-dimensional quantum dots, two-dimensional quantum sheets or one-dimensional quantum rods.
The thickness of the dielectric layer 32 in this application is d 2 ，10nm≤d 2 And the wavelength is less than or equal to 500nm. Optionally, in order to meet different design requirements, in some embodiments, d is provided 2 And the wavelength is less than or equal to 200nm. In some embodiments, d 2 ≤100nm。
In some embodiments, the thickness of each dielectric layer 32 in the main functional layer 221 is equal. By this arrangement, the reflection rule of each dielectric layer 32 on the base light can be ensured to be consistent, so that the color conversion structure 22 has high reflectivity on the base light. And the process conditions are the same when each dielectric layer 32 is manufactured, so that the process can be simplified.
The dielectric layer 32 in this application comprises an organic material or an inorganic material. Dielectric layer 32 includes, but is not limited to, siO 2 ，Al 2 O 3 ，TiO 2 ，SiN x ，ZrO 3 ，HfO 2 Inorganic materials such as AlN, siON, znO, and the like. Dielectric layer 32 includes, but is not limited to, a polymer material such as PMMA (polymethyl methacrylate), PDMS (polydimethylsiloxane), PI (polyimide), PET (polyethylene terephthalate), PS (polystyrene), and the like.
In some embodiments, fig. 4 is a schematic view of a light-emitting pixel structure in another light-emitting panel according to an embodiment of the present application. As shown in fig. 4, at least part of the light emitting pixel 20 further comprises a planarization layer 23, the planarization layer 23 being located between the color conversion structure 22 and the light emitting device 21. The material of the planarization layer 23 includes at least one or more of silicon oxide, silicon nitride, and silicon oxynitride. The planarization layer 23 is fabricated prior to the main functional layer 221, and the planarization layer 23 can provide a relatively planar surface and can also act as a barrier to water and oxygen to protect the subsequently fabricated color conversion layer 31. The planarization layer 23 can physically isolate the light emitting device from the color conversion material, preventing the light emitting device from operating overheat from affecting the stability of the color conversion material. The planarization layer 23 may be formed by electron beam evaporation, magnetron sputtering, atomic layer deposition, or chemical vapor deposition.
Further, considering that the high-folding/low-folding periodic stack formed by alternately stacking the color conversion layer 31 and the dielectric layer 32 in the present application may cause a certain oscillatory passband ripple in the transmission spectrum of the color conversion structure 22. As the number of cycles in which the color conversion layer 31 and the dielectric layer 32 are stacked increases, the reflectivity of the main functional layer 221 to the base light can be increased, and the number of oscillatory passband ripple outside the reflection band in the transmission spectrum can be increased. The oscillatory passband ripple affects the filtering effect of the color conversion structure 22 and thus the light emission performance of the light emitting pixel. Based on this, the present inventors considered to add a structure capable of breaking passband ripple in the color conversion structure 22 to promote the smoothness of the transmission spectrum.
In some embodiments, fig. 5 is a schematic diagram of a light-emitting pixel structure in another light-emitting panel according to an embodiment of the present application. As shown in fig. 5, the color conversion structure 22 further includes a spectral modulation layer 223; one spectral modulation layer 223 is located on the side of the main functional layer 221 close to the light emitting device 21, and the other spectral modulation layer 223 is located on the side of the main functional layer 221 remote from the light emitting device 21. The spectral modulation layer 223 is capable of adjusting the equivalent refractive index of the color conversion structure 22, thereby adjusting the admittance of the color conversion structure 22 to destroy the oscillatory passband ripple. The spectrum modulation layer 223 corresponds to an antireflection film layer at a film boundary position of the main functional layer 221, and can destroy the oscillatory passband ripple and improve the transmittance of the passband, thereby improving the light emission performance of the light emitting pixel.
The color converting structure 22 illustrated in fig. 5 includes two spectral modulation layers 223, and in some embodiments, the color converting structure 22 includes only one spectral modulation layer 223.
In one embodiment, color converting structure 22 includes a spectral modulation layer 223 between main functional layer 221 and planar layer 23. The spectrum modulation layer 223 between the main functional layer 221 and the flat layer 23 can adjust the equivalent refractive index of the color conversion structure 22, so that the equivalent refractive index of the color conversion structure 22 is matched with the refractive index of the substrate below the color conversion structure (the flat layer 23 and the film layer below the flat layer in the application) and the refractive index of the upper Fang Jiezhi (the medium on the side, far away from the flat layer 23, of the color conversion structure 22, which can be air or other functional layers), which is equivalent to adding an antireflection film layer at the film boundary position on the side, close to the flat layer, of the main functional layer 221, and can destroy the oscillatory passband ripple and improve the transmissivity of the passband.
In another embodiment, color converting structure 22 includes a spectral modulation layer 223 on a side of primary functional layer 221 remote from planar layer 23. The spectrum modulation layer 223 on the side of the main functional layer 221 away from the flat layer 23 can adjust the equivalent refractive index of the color conversion structure 22, so that the equivalent refractive index of the color conversion structure 22 is matched with the refractive index of the substrate below and the medium above, which is equivalent to adding an anti-reflection film layer at the film boundary position on the side of the main functional layer 221 away from the flat layer 23, and can destroy the oscillatory passband ripple and improve the transmissivity of the passband.
The setting positions and the number of the light modulation layers 223 are set according to the color of the base light and the color of the target light in the application.
In an embodiment, fig. 6 is a schematic view of a light-emitting pixel in another light-emitting panel according to an embodiment of the present application, and fig. 7 is a schematic view of a transmission spectrum of a color conversion structure in the embodiment of fig. 6. The light emitting device below the color conversion structure 22 in the embodiment of fig. 6 is a blue light emitting device 21B, and the color conversion layer 31 in the color conversion structure 22 emits red light after being excited by illumination, and the color conversion structure 22 and the blue light emitting device 21B form a red light emitting pixel 20R.
As shown in fig. 6, the color conversion structure 22 includes a stacked spectrum modulation layer 223, a main function layer 221, and a spectrum modulation layer 223. A first modulation layer 41 is stacked as a spectrum modulation layer 223 on top of the planarization layer 23. Then alternately stacking the dielectric layer 32 and the color conversion layer 31 in turn, alternately stacking the dielectric layer 32 and the color conversion layer 31 for 14 periods, and then stacking a layer of dielectricLayer 32 forms the main functional layer 221. Above the main functional layer 221 is stacked a spectral modulation layer 223 comprising a first modulation layer 41. In this embodiment, the dielectric layer 32 has a refractive index of 1.4654 and a thickness of 76.76nm, and the material of the dielectric layer 32 is SiO 2 . The refractive index of the color conversion layer 31 was 2.39 and the thickness was 47.07nm, and the color conversion layer 31 included red light quantum dots. The thickness of the first modulation layer 41 is 23.54nm. Alternatively, the material of the first modulation layer 41 is the same as that of the color conversion layer 31, so that the first modulation layer 41 and the color conversion layer 31 can be manufactured by the same process, thereby simplifying the process. The total thickness of the color converting structure 22 in this embodiment is about 1.8 μm. The periodic structure of the high-folding/low-folding layer satisfies n 1 *d 1 ＝n 2 *d 2 。
As can be seen from fig. 7, the transmittance of the color conversion structure 22 in the embodiment of fig. 6 for red light is >95%, and the transmittance for blue light is about 0%. The color conversion structure 22 has a function of transmitting red light and reflecting blue light, and the color conversion structure 22 can filter out the blue light and prevent the blue light from leaking. Then the embodiment of fig. 6 provides a red light emitting pixel 20R in which: the blue light emitted by the blue light emitting device 21B can be reflected by the color conversion structure 22 and concentrated in the color conversion layer 31 for use, and the color conversion layer 31 emits red light after absorbing the blue light, so that the red light emitting pixel 20R has higher luminous efficiency, and meanwhile, the red light emitting pixel 20R does not emit blue light basically, thereby preventing blue light leakage and reducing the luminous color purity of the red light emitting pixel 20R.
In some embodiments, as shown in fig. 6, the material of first modulation layer 41 is the same as the material of color conversion layer 31, and the thickness of first modulation layer 41 is different from the thickness of color conversion layer 31. The first modulation layer 41 is equivalent to an antireflection film layer interposed between the main functional layer 221 and the planarization layer 23, and the first modulation layer 41 can adjust the equivalent refractive index of the color conversion structure 22, thereby breaking the oscillatory passband ripple of the transmission spectrum of the color conversion structure 22, improving the transmittance of the passband, improving the smoothness of the transmission spectrum, and improving the light emission performance of the light emitting pixel.
In some embodiments, the thickness of the first modulation layer 41 is smaller than the thickness of the color conversion layer 31, which is arranged to balance the reflectivity of the color conversion structure 22 for the base light and the transmissivity of the target light, such that the color conversion structure 22 has a high reflectivity for the base light and a high transmissivity for the target light.
In some embodiments, as shown in fig. 6, the thickness of first modulation layer 41 is one half the thickness of color conversion layer 31.
In some embodiments, n 1 *d 1 ＝n 2 *d 2 ＝λ 0 /4, the thickness of the first modulation layer 41 satisfies n _41 *d _41 ＝λ 0 /8. Wherein n is _41 Is the refractive index, d, of the first modulation layer 41 _41 Is the thickness of the first modulation layer 41.
In another embodiment, fig. 8 is a schematic view of a light-emitting pixel in another light-emitting panel according to an embodiment of the present application, and fig. 9 is a schematic view of a transmission spectrum of a color conversion structure in the embodiment of fig. 8. The light emitting device below the color conversion structure 22 in the embodiment of fig. 8 is a blue light emitting device 21B, and the blue light emitting device 21B emits blue light. The color conversion layer 31 in the color conversion structure 22 emits red light after being excited by illumination, and the color conversion layer 31 comprises red light quantum dots. The color conversion structure 22 and the blue light emitting device 21B constitute a red light emitting pixel 20R. The material of the dielectric layer 32 in FIG. 8 is different from that in the embodiment of FIG. 6, and the material of the dielectric layer 32 in the embodiment of FIG. 8 is Al 2 O 3 。
As shown in fig. 8, the color conversion structure 22 includes a stacked spectrum modulation layer 223, main function layer 221, and spectrum modulation layer 223. A second modulation layer 42 is stacked as a spectral modulation layer 223 over the planarization layer 23. Then, the color conversion layer 31 and the dielectric layer 32 are alternately stacked in this order, and the dielectric layer 32 and the color conversion layer 31 are alternately stacked for 6 cycles, and then one color conversion layer 31 is stacked to form the main functional layer 221. Above the main functional layer 221 is stacked a spectral modulation layer 223 comprising a second modulation layer 42. In this example, the dielectric layer 32 has a refractive index of 1.6713 and a thickness of 67.31nm, and the color conversion layer 31 has a refractive index of 2.30 and a thickness of 48.91nm. The thickness of the second modulation layer 42 on the side of the main functional layer 221 close to the blue light emitting device 21B was 33.66nm. The thickness of the second modulation layer 42 on the side of the main functional layer 221 remote from the blue light emitting device 21B is 134.63nm. Optionally, a second modulationThe material of the layer 42 is the same as that of the dielectric layer 32, so that the second modulation layer 42 can be manufactured by the same process as that of the dielectric layer 32, and the process is simplified. The total thickness of the color converting structure 22 in this embodiment is about 914nm. In the main functional layer 221 of this embodiment, n is satisfied between the dielectric layer 32 and the color conversion layer 31 1 *d 1 ＝n 2 *d 2 。
As can be seen from fig. 9, the transmittance of the color conversion structure 22 in the embodiment of fig. 8 for red light is >95% and the transmittance for blue light is <5%. The color conversion structure 22 has a function of transmitting red light and reflecting blue light, and the color conversion structure 22 can basically filter out the blue light and prevent the blue light from leaking. Then the embodiment of fig. 8 provides a red light emitting pixel 20R in which: the blue light emitted by the blue light emitting device 21B can be reflected by the color conversion structure 22 and concentrated in the color conversion layer 31 for use, and the color conversion layer 31 emits red light after absorbing the blue light, so that the red light emitting pixel 20R has higher luminous efficiency, and meanwhile, the red light emitting pixel 20R does not emit blue light basically, thereby preventing blue light leakage from reducing the luminous color purity of the red light emitting pixel 20R.
In addition, dielectric layer 32 includes Al 2 O 3 The dielectric layer 32 can have a higher compactness and can improve the overall resistance to water and oxygen of the color conversion structure 22. In the embodiment of fig. 8, the thickness of the color conversion structure 22 is 914nm, so that the material cost of the color conversion material can be reduced, and the yield of the film forming process of the color conversion layer 31 can be improved.
In some embodiments, the material of the second modulation layer 42 is the same as the material of the dielectric layer 32, and then the second modulation layer 42 can be fabricated using the same process as the dielectric layer 32, thereby simplifying the process.
Optionally, the thickness of the second modulation layer 42 is different from the thickness of the dielectric layer 32. The second modulation layer 42 is equivalent to an antireflection film layer interposed between the main functional layer 221 and a medium above the main functional layer 221, and the second modulation layer 42 can adjust the equivalent refractive index of the color conversion structure 22, so as to destroy the oscillatory passband ripple of the transmission spectrum of the color conversion structure 22, improve the transmittance of the passband, and improve the smoothness of the transmission spectrum, thereby improving the light emitting performance of the light emitting pixel.
In another oneIn an embodiment, fig. 10 is a schematic diagram of a light-emitting pixel in another light-emitting panel according to the embodiment of the present application, and fig. 11 is a schematic diagram of a transmission spectrum of a color conversion structure in the embodiment of fig. 10. The light emitting device below the color conversion structure 22 in the embodiment of fig. 10 is a blue light emitting device 21B, and the blue light emitting device 21B emits blue light. The color conversion layer 31 in the color conversion structure 22 emits red light after being excited by illumination, and the color conversion layer 31 comprises red light quantum dots. The color conversion structure 22 and the blue light emitting device 21B constitute a red light emitting pixel 20R. The material of the dielectric layer 32 in FIG. 10 is different from that of the embodiments of FIGS. 6 and 8, and the material of the dielectric layer 32 in the embodiment of FIG. 10 is Si 3 N 4 。
As shown in fig. 10, the color conversion structure 22 includes a stacked spectrum modulation layer 223, main function layer 221, and spectrum modulation layer 223. A second modulation layer 42 is stacked as a spectral modulation layer 223 over the planarization layer 23. Then, the color conversion layer 31 and the dielectric layer 32 are alternately stacked in this order, and the dielectric layer 32 and the color conversion layer 31 are alternately stacked for 9 cycles, and then one color conversion layer 31 is stacked to form the main functional layer 221. Above the main functional layer 221 is stacked a spectral modulation layer 223 comprising a second modulation layer 42. In this example, the dielectric layer 32 has a refractive index of 1.83 and a thickness of 61.48nm, and the color conversion layer 31 has a refractive index of 2.30 and a thickness of 48.91nm. The thickness of the second modulation layer 42 on the side of the main functional layer 221 close to the blue light emitting device 21B is 30.74nm. The thickness of the second modulation layer 42 on the side of the main functional layer 221 remote from the blue light emitting device 21B is 122.95nm. The overall thickness of the color converting structure 22 in this embodiment is approximately 1196nm. And n is satisfied between the dielectric layer 32 and the color conversion layer 31 in the main functional layer 221 of this embodiment 1 *d 1 ＝n 2 *d 2 。
As can be seen from fig. 11, the transmittance of the color conversion structure 22 in the embodiment of fig. 10 for 620±10nm red light is >95%, and the transmittance for 450nm blue light is <5%. The color conversion structure 22 has a function of transmitting red light and reflecting blue light, and the color conversion structure 22 can basically filter out the blue light and prevent the blue light from leaking. Then the embodiment of fig. 10 provides a red light emitting pixel 20R in which: the blue light emitted by the blue light emitting device 21B can be reflected by the color conversion structure 22 and concentrated in the color conversion layer 31 for use, and the color conversion layer 31 emits red light after absorbing the blue light, so that the red light emitting pixel 20R has higher luminous efficiency, and meanwhile, the red light emitting pixel 20R does not emit blue light basically, thereby preventing blue light leakage from reducing the luminous color purity of the red light emitting pixel 20R.
In some embodiments, the material of dielectric layer 32 includes Si 3 N 4 . The dielectric layer 32 can be prepared in a large scale by using processes such as electron beam evaporation, magnetron sputtering, atomic layer deposition or chemical vapor deposition. Si (Si) 3 N 4 The film forming rate is high, and the yield can be improved. SiN in OLED light emitting device structures x SiON is a common material for thin film encapsulation layers with excellent water-oxygen barrier properties.
In one embodiment, fig. 12 is a simplified schematic diagram of another light-emitting panel according to an embodiment of the present application, and as shown in fig. 12, the light-emitting pixels include a red light-emitting pixel 20R, a green light-emitting pixel 20G, and a blue light-emitting pixel 20B. The red light emitting pixel 20R includes a blue light emitting device 21B and a color conversion structure 22, the green light emitting pixel 20G includes a green light emitting device 21G, and the blue light emitting pixel 20B includes a blue light emitting device 21B. The red light emitting pixel 20R may be designed with reference to any one of the embodiments of fig. 6, 8 and 10.
The blue light emitting device 21B is adopted to emit blue light to excite the color conversion layer 31 to emit red light, or the green light emitting device 21G is adopted to emit green light to excite the color conversion layer 31 to emit red light, so that the original ultra-narrow half-width full-width of the luminescent material can be kept while the high light emitting efficiency of the red light emitting pixel 20R is ensured, and the high color purity of the luminescent pixel is realized.
In another embodiment, fig. 13 is a schematic view of a light-emitting pixel in another light-emitting panel according to an embodiment of the present application, and fig. 14 is a schematic view of a transmission spectrum of a color conversion structure in the embodiment of fig. 13. The light emitting device below the color conversion structure 22 in the embodiment of fig. 13 is a blue light emitting device 21B, and the blue light emitting device 21B emits blue light. The color conversion layer 31 in the color conversion structure 22 emits green light after being excited by illumination, and the color conversion layer 31 comprises green light quantum dots. The color conversion structure 22 and the blue light emitting device 21B constitute a green light emitting pixel 20G.
As shown in fig. 13, the color conversion structure 22 includes a stacked spectrum modulation layer 223, main function layer 221, and spectrum modulation layer 223. A second modulation layer 42 of 67.31nm thickness and a first modulation layer 41 of 24.46nm thickness are stacked as spectral modulation layers 223 over the planar layer 23. Then, the dielectric layers 32 and the color conversion layers 31 are alternately stacked in order, and after 8 periods of alternating stacking of the dielectric layers 32 and the color conversion layers 31, one dielectric layer 32 is stacked again to form the main functional layer 221. The main functional layer 221 has stacked thereon a first modulation layer 41 having a thickness of 24.46nm and a second modulation layer 42 having a thickness of 16.85nm to form a spectrum modulation layer 223. In this embodiment, the material of dielectric layer 32 includes Al 2 O 3 The refractive index was 1.6713 and the thickness was 67.31nm, and the refractive index of the color conversion layer 31 was 2.30 and the thickness was 48.91nm. The total thickness of the color converting structure 22 in this embodiment is about 1130nm. And n is satisfied between the dielectric layer 32 and the color conversion layer 31 in the main functional layer 221 of this embodiment 1 *d 1 ＝n 2 *d 2 。
As can be seen from fig. 14, the transmittance of the color conversion structure 22 in the embodiment of fig. 13 for 530±10nm green light is >95%, and the transmittance for 450nm blue light is about 0%. The color conversion structure 22 has a function of transmitting green light and reflecting blue light, and the color conversion structure 22 can basically filter out the blue light and prevent the blue light from leaking. Then the embodiment of fig. 13 provides a green light emitting pixel 20G in which: the blue light emitted by the blue light emitting device 21B can be reflected by the color conversion structure 22 and concentrated in the color conversion layer 31 for use, and the color conversion layer 31 emits green light after absorbing the blue light, so that the green light emitting pixel 20G has higher luminous efficiency, and meanwhile, does not emit blue light basically, and ensures high green light color purity.
In one embodiment, fig. 15 is a simplified schematic diagram of another light-emitting panel according to an embodiment of the present application, and as shown in fig. 15, the light-emitting pixels include a red light-emitting pixel 20R, a green light-emitting pixel 20G, and a blue light-emitting pixel 20B. Wherein the red light emitting pixel 20R includes a blue light emitting device 21B and a red quantum dot color conversion structure 22, the green light emitting pixel 20G includes a blue light emitting device 21B and a green quantum dot color conversion structure 22, and the blue light emitting pixel 20B includes a blue light emitting device 21B. The red light emitting pixel 20R may be designed with reference to any one of the embodiments of fig. 6, 8 and 10. The green light-emitting pixel 20G may be designed with reference to the structure of the embodiment of fig. 13.
In another embodiment, fig. 16 is a schematic view of a light-emitting pixel in another light-emitting panel according to an embodiment of the present application, and fig. 17 is a schematic view of a transmission spectrum of a color conversion structure in the embodiment of fig. 16. The light emitting device below the color conversion structure 22 in the embodiment of fig. 16 is a green light emitting device 21G, and the green light emitting device 21G emits green light. The color conversion layer 31 in the color conversion structure 22 emits red light after being excited by illumination, and the color conversion layer 31 comprises red light quantum dots. The color conversion structure 22 and the green light emitting device 21G constitute a red light emitting pixel 20R.
As shown in fig. 16, the color conversion structure 22 includes a stacked spectrum modulation layer 223, main function layer 221, and spectrum modulation layer 223. A second modulation layer 42 of 79.61nm thickness and a first modulation layer 41 of 28.80nm thickness are stacked as a spectrum modulation layer 223 over the planarization layer 23. Then, the dielectric layers 32 and the color conversion layers 31 are alternately stacked in order, and after 8 periods of alternating stacking of the dielectric layers 32 and the color conversion layers 31, one dielectric layer 32 is stacked again to form the main functional layer 221. A first modulation layer 41 having a thickness of 28.80nm and a second modulation layer 42 having a thickness of 19.93nm are stacked on top of the main functional layer 221 to form a spectrum modulation layer 223. In this embodiment, the material of dielectric layer 32 includes Al 2 O 3 The refractive index was 1.6643 and the thickness was 79.61nm, and the refractive index of the color conversion layer 31 was 2.30 and the thickness was 57.61nm. The total thickness of the color converting structure 22 in this embodiment is about 1.33 μm. And n is satisfied between the dielectric layer 32 and the color conversion layer 31 in the main functional layer 221 of this embodiment 1 *d 1 ＝n 2 *d 2 。
As can be seen from fig. 17, the transmittance of the color conversion structure 22 in the embodiment of fig. 16 for 620±10nm red light is >90%, and the transmittance for 520nm green light is about 0%. The color conversion structure 22 has a function of transmitting red light and reflecting green light, and the color conversion structure 22 can basically filter the green light to prevent light leakage of the green light. In the red light emitting pixel 20R provided in the embodiment of fig. 16: the green light emitted from the green light emitting device 21G can be reflected by the color conversion structure 22 and concentrated in the color conversion layer 31 for use, and the color conversion layer 31 absorbs the green light and emits red light, so that the red light emitting pixel 20R has high luminous efficiency, and does not emit green light substantially. The embodiment of fig. 16 has less stokes loss when the green light emitting device 21G is used to excite the red light quantum dots, and can reduce power consumption in the red light emitting pixel 20R, resulting in a color conversion light emitting device of higher WPE (Wall-Plug Efficiency).
In some embodiments, the light emitting pixels include a red light emitting pixel 20R, a green light emitting pixel 20G, and a blue light emitting pixel 20B. The red light emitting pixel 20R includes a green light emitting device 21G and a color conversion structure 22, the green light emitting pixel 20G includes a green light emitting device 21G, and the blue light emitting pixel 20B includes a blue light emitting device 21B. The red light emitting pixel 20R may be designed with reference to the structure of the embodiment of fig. 16.
In some embodiments, the color conversion layer 31 in the main functional layer 221 includes one color conversion layer, and then the color conversion layer 31 emits light of a single color after being subjected to laser light. As described above, fig. 6, 8, 10, 13, and 16 illustrate that the light emitting pixel 20 emits light of a single color. Taking the embodiment of fig. 6 as an example, it can be understood that the color conversion layer 31 includes a first color conversion layer, where the first color conversion layer includes a red color conversion material, such as red light quantum dots, and emits red light after being excited by light, where the thickness of each first color conversion layer in the main functional layer 221 is the same.
In other embodiments, the color conversion layer 31 in the main functional layer 221 includes two or three color conversion layers, and then different color conversion layers emit different colors of light after receiving light respectively, and by disposing the color conversion material in the color conversion layer 31, the light emitting pixel 20 can emit the composite light.
In some embodiments, fig. 18 is a schematic view of a luminescent pixel in another luminescent panel according to an embodiment of the present application, as shown in fig. 18, the main functional layer 221 includes a first color conversion layer 31-1 and a second color conversion layer 31-2, the first color conversion layer 31-1 includes a first color conversion material, the first color conversion material emits a first color light after being excited, the second color conversion layer 31-2 includes a second color conversion material, and the second color conversion material emits a second color light after being excited. In the main function layer 221: the first color conversion layer 31-1 and the dielectric layer 32 are stacked to form a first stack, the second color conversion layer 31-2 and the dielectric layer 32 are alternately stacked to form a second stack, and the first stack and the second stack are stacked. Alternatively, the thickness of each first color conversion layer 31-1 is the same in the main functional layer 221, and the thickness of each second color conversion layer 31-2 is the same. While the thickness of the first color conversion layer 31-1 and the thickness of the second color conversion layer 31-2 may be the same or different.
Alternatively, the first color conversion layer 31-1 includes red light quantum dots, and the second color conversion layer 31-2 includes green light quantum dots. When the light emitting device 21 emits blue light, after the blue light enters the color conversion structure 22, the blue light excites the first color conversion layer 31-1 to emit red light, and meanwhile, the blue light also excites the second color conversion layer 31-2 to emit green light, and by adjusting the refractive index and thickness of the first color conversion layer 31-1, the refractive index and thickness of the second color conversion layer 31-2, and the refractive index and thickness of the dielectric layer 32, the overall blue light reflectance of the color conversion structure 22 can be high, a certain transmittance of the blue light can be maintained, and meanwhile, the transmittance of the color conversion structure 22 to red light and green light can be high, so that the light emitting pixel 20 can emit light in three colors of red, green light and blue light can be controlled, and the light emitting ratio of the light in three colors can be controlled, so that the light emitting pixel 20 can emit white light.
In some embodiments, the light emitting panel includes white light emitting pixels therein, which may be designed with reference to the embodiment of fig. 18.
In some embodiments, the primary functional layer 221 includes a first color conversion layer 31-1 and a second color conversion layer 31-2, the first color conversion layer 31-1 including a first color conversion material that emits light of a first color when excited, and the second color conversion layer 31-2 including a second color conversion material that emits light of a second color when excited. In the main function layer 221: the first color conversion layer 31-1 and the second color conversion layer 31-2 are stacked to overlap, and the medium layer 32 is interposed between the adjacent first color conversion layer 31-1 and second color conversion layer 31-2.
In other embodiments, the main functional layer 221 includes a first color conversion layer 31-1 and a second color conversion layer 31-2, where the first color conversion layer 31-1 and the second color conversion layer 31-2 are randomly distributed.
In some embodiments, fig. 19 is a schematic view of a luminescent pixel in another luminescent panel according to an embodiment of the present application, as shown in fig. 19, the main functional layer 221 includes a first color conversion layer 31-1, a second color conversion layer 31-2, and a third color conversion layer 31-3, the first color conversion layer 31-1 includes a first color conversion material, the first color conversion material emits a first color light after being excited, the second color conversion layer 31-2 includes a second color conversion material, and the second color conversion material emits a second color light after being excited. The third color conversion layer 31-3 includes a third color conversion material that emits a third color light upon excitation. In the main function layer 221: the first color conversion layer 31-1 and the dielectric layer 32 are stacked to form a first stack, the second color conversion layer 31-2 and the dielectric layer 32 are stacked alternately to form a second stack, the third color conversion layer 31-3 and the dielectric layer 32 are stacked to form a third stack, and the first stack, the second stack, and the third stack are stacked. Alternatively, in the main functional layer 221, the thicknesses of the first color conversion layers 31-1 are the same, the thicknesses of the second color conversion layers 31-2 are the same, and the thicknesses of the third color conversion layers 31-3 are the same.
Alternatively, the first color conversion layer 31-1 includes red light quantum dots, the second color conversion layer 31-2 includes green light quantum dots, and the third color conversion layer 31-3 includes blue light quantum dots. When the light emitting device 21 emits ultraviolet light, the ultraviolet light irradiates the color conversion structure 22, and then the ultraviolet light excites the first color conversion layer 31-1 to emit red light, and simultaneously, the ultraviolet light also excites the second color conversion layer 31-2 to emit green light, and the ultraviolet light also excites the third color conversion layer 31-3 to emit blue light. By adjusting the refractive index and thickness of the first color conversion layer 31-1, the refractive index and thickness of the second color conversion layer 31-2, the refractive index and thickness of the third color conversion layer 31-3, and the refractive index and thickness of the medium layer 32, the color conversion structure 22 as a whole can have a high reflectance to ultraviolet light, while the transmittance of the color conversion structure 22 to red light, green light, and blue light is high, and the light emission ratio of the three colors of light is controlled, so that the emission of white light by the light-emitting pixel 20 can be realized.
In some embodiments, fig. 20 is a schematic view of a luminescent pixel in another luminescent panel provided in an embodiment of the present application, as shown in fig. 20, the main functional layer 221 includes a first color conversion layer 31-1, a second color conversion layer 31-2, and a third color conversion layer 31-3, the first color conversion layer 31-1 includes a first color conversion material, the first color conversion material emits a first color light after being excited, the second color conversion layer 31-2 includes a second color conversion material, and the second color conversion material emits a second color light after being excited. The third color conversion layer 31-3 includes a third color conversion material that emits a third color light upon excitation. In the main function layer 221: the first color conversion layer 31-1, the second color conversion layer 31-2, and the medium layer 32, the third color conversion layer 31-3 are stacked to overlap, and the medium layer 32 is interposed between the adjacent first color conversion layer 31-1 and second color conversion layer 31-2, between the adjacent second color conversion layer 31-2 and third color conversion layer 31-3, and between the third color conversion layer 31-3 and first color conversion layer 31-1. This embodiment enables the light emitting pixel to emit white light.
In other embodiments, the first color conversion layer 31-1, the second color conversion layer 31-2, and the third color conversion layer 31-3 in the main functional layer 221 are randomly distributed. This embodiment enables the light emitting pixel to emit white light.
In other embodiments, the color conversion layer 31 includes a fourth color conversion layer, which is alternately stacked with the dielectric layer 32. The fourth color conversion layer includes at least two color conversion materials that emit different colors of light upon excitation. That is, two or more color conversion materials are dispersed in the fourth color conversion layer.
Taking a color conversion material as a quantum dot as an example, optionally, the fourth color conversion layer comprises a red light quantum dot and a green light quantum dot; alternatively, the fourth color conversion layer includes red light quantum dots and blue light quantum dots; or the fourth color conversion layer comprises red light quantum dots, green light quantum dots and blue light quantum dots. As can be seen from the above description, the color conversion structure 22 can transmit light of three colors of red, green and blue by adopting the design that the fourth color conversion layer and the dielectric layer 32 are alternately stacked, thereby realizing that the light emitting pixel emits white light.
In an embodiment, fig. 21 is a schematic view of a light-emitting pixel in another light-emitting panel according to an embodiment of the present application, and fig. 22 is a schematic view of a transmission spectrum of the color conversion structure in fig. 21. The light emitting device below the color conversion structure 22 in the embodiment of fig. 21 is an ultraviolet light emitting device 21UV, and the ultraviolet light emitting device 21UV emits ultraviolet light. The color conversion layer 31 in the color conversion structure 22 includes a first color conversion layer, a second color conversion layer, and a third color conversion layer, and the different color conversion layers are not labeled in fig. 21, and the thicknesses of the color conversion layers are shown to be the same in fig. 21.
As shown in fig. 21, the color conversion structure 22 includes a stacked spectrum modulation layer 223, main function layer 221, and spectrum modulation layer 223. A second modulation layer 42 of 22nm thickness and a first modulation layer 41 of 16.3nm thickness are stacked as a spectral modulation layer 223 on top of the planarization layer 23. Then, the dielectric layers 32 and the color conversion layers 31 are alternately stacked in order, and after 6 periods of alternating stacking of the dielectric layers 32 and the color conversion layers 31, one dielectric layer 32 is stacked again to form the main functional layer 221. A first modulation layer 41 of 16.3nm thickness and a second modulation layer 42 of 22nm thickness are stacked on top of the main functional layer 221 to form a spectral modulation layer 223. In this embodiment, the material of dielectric layer 32 includes Al 2 O 3 The color conversion layer 31 is a red light, green light or blue light quantum dot with a refractive index of 1.7042 and a thickness of 44nm, and the refractive index of 2.30 and the thickness of 32.6 nm. It will be appreciated that the fluorescence emission peak position of the quantum dot is mainly affected by the quantum confinement effect, and the refractive index of the material itself is not substantially changed, so that the refractive indexes of the color conversion layers 31 are substantially the same. The total thickness of the color converting structure 22 in this embodiment is about 580nm.
As can be seen from fig. 22, the color conversion structure 22 in the embodiment of fig. 21 has a transmittance of >90% for 460±10nm blue light, a transmittance of >90% for 520±10nm green light, a transmittance of >90% for 620±10nm red light, and a transmittance of <5% for the ultraviolet band. The color conversion structure 22 has the function of transmitting three types of light, namely red, green and blue, and reflecting ultraviolet light, and the color conversion structure 22 can basically filter the ultraviolet light and prevent the ultraviolet light from leaking light. The embodiment of fig. 21 provides a white light emitting pixel.
Fig. 21 illustrates an embodiment in which the ultraviolet light emitting device 21UV cooperates with a color conversion structure 22 comprising red, green, blue quantum dots such that the light emitting pixel emits white light. In some embodiments, the ultraviolet light emitting device 21UV may cooperate with a color conversion structure 22 comprising a single color conversion material such that the light emitting pixel emits a single color light. For example, the ultraviolet light emitting device 21UV cooperates with the color conversion structure 22 including the red color conversion material such that the light emitting pixel emits red light, and the ultraviolet light emitting device 21UV cooperates with the color conversion structure 22 including the green color conversion material such that the light emitting pixel emits green light.
In another embodiment, fig. 23 is a simplified schematic diagram of another light-emitting panel according to an embodiment of the present application, where, as shown in fig. 23, the light-emitting pixel 20 includes an ultraviolet light-emitting device 21UV and a color conversion structure 22, and the light-emitting pixel 20 can emit blue light, green light, red light or white light according to the light-emitting peak position of the quantum dot in the color conversion structure 22. Wherein the color conversion layer 31 in the color conversion structure 22 comprises one, two or three color conversion layers, or the color conversion layer 31 comprises the fourth color conversion layer described above.
In another embodiment, fig. 24 is a simplified schematic diagram of another light-emitting panel provided in an embodiment of the present application, and as shown in fig. 23, the light-emitting panel further includes a second flat layer 50, the second flat layer 50 is located on a side of the color conversion structure 22 away from the light-emitting device 21, and the second flat layer 50 fills a gap between adjacent color conversion structures 22 and covers the color conversion structure 22. A micro lens 60 is further disposed on a side of the second planarization layer 50 away from the light emitting device 21, the micro lens 60 corresponds to the light emitting device 21, and the micro lens 60 is designed according to the emission spectrum of the light emitting pixel 20. The microlens 60 can improve the light emission efficiency of the light emitting pixel 20 and optimize the light emission shape.
The embodiment of the application provides a manufacturing method of a light-emitting panel, which can be used for manufacturing the light-emitting panel provided by the embodiment of the application. Fig. 25 is a flowchart of a method for manufacturing a light-emitting panel according to an embodiment of the present application. As shown in fig. 25, the method for manufacturing the light-emitting panel includes:
step S101: a planarization layer 23 is formed on the side of the light emitting device 21 remote from the substrate 10, and may be formed by electron beam evaporation, magnetron sputtering, atomic layer deposition, or chemical vapor deposition.
Step S102: dielectric layer 32 is formed over planarization layer 23, and dielectric layer 32 may be formed by the same process as planarization layer 23.
Step S103: the color conversion layer 31 is fabricated using a solution spin coating or ink jet printing process on top of the dielectric layer 32.
The steps S102 and S103 are repeated to produce a structure 022 in which the dielectric layers 32 and the color conversion layers 31 are alternately stacked.
Step S104: the structure 022 is patterned by an etching process or a nanoimprint process to form a color conversion structure 22, the color conversion structure 22 corresponding to the light emitting device 21.
Optionally, the manufacturing method further includes step S105: a second planarization layer 50 is fabricated over the color conversion structures 22, the second planarization layer 50 filling the gaps between adjacent color conversion structures 22 and covering the color conversion structures 22.
Optionally, the manufacturing method further includes step S106: a microlens 60 is fabricated on the second planarization layer 50, and the microlens 60 corresponds to the light emitting device 21.
In some embodiments, the color conversion structure 22 in the light emitting panel further includes a spectral modulation layer. Wherein, a spectrum modulation layer is disposed on one side of the main functional layer 221, which is close to the flat layer 23, formed by alternately stacking the dielectric layer 32 and the color conversion layer 31, or one spectrum modulation layer is disposed on one side of the main functional layer 221, which is far from the flat layer 23, or both upper and lower sides of the main functional layer 221.
In another embodiment, taking as an example that the upper and lower sides of the main functional layer 221 are provided with a spectrum modulation layer. Fig. 26 is a flowchart of a manufacturing method of another light-emitting panel according to an embodiment of the present application. As shown in fig. 26, the method for manufacturing the light-emitting panel includes:
step S201: a planarization layer 23 is fabricated on the side of the light emitting device 21 remote from the substrate 10.
Step S202: a first spectral modulation layer 223 is fabricated over the planar layer 23, the spectral modulation layer 223 at this location comprising a stack of a first modulation layer 41 and a second modulation layer 42. Alternatively, the material of the first modulation layer is the same as that of the color conversion layer 31, and the first modulation layer may be manufactured by the same process as that of the color conversion layer 31. Alternatively, the material of the second modulation layer is the same as that of the dielectric layer 32, and the second modulation layer may be manufactured by the same process as that of the dielectric layer 32.
Step S203: the dielectric layers 32 and the color conversion layers 31 are alternately stacked on the spectrum modulation layer 223, and the dielectric layers 32 and the color conversion layers 31 are alternately stacked for a preset number of cycles.
Step S204: a second spectral modulation layer 223 is fabricated, the spectral modulation layer 223 at this location comprising a stack of a first modulation layer 41 and a second modulation layer 42.
After steps S201 to S204, the structure 022 of the spectrum modulation layer 223+the medium layer 32/color conversion layer 31 alternately stacked structure+the spectrum modulation layer 223 is formed.
Step S205: the structure 022 is subjected to patterning processing to form a color conversion structure 22, the color conversion structure 22 corresponding to the light emitting device 21. The color conversion structure 22 includes a spectrum modulation layer 223, a main functional layer 221, and a spectrum modulation layer 223 stacked in this order on a side away from the light emitting device 21. Wherein the main functional layer 221 includes a structure in which the dielectric layers 32/the color conversion layers 31 are alternately stacked.
The manufacturing method provided in this embodiment can manufacture the color conversion structure 22 including the spectrum modulation layer 223. In the embodiment of fig. 26, the first modulation layer 41 is illustrated as being located on the side of the second modulation layer 42 near the light emitting device 21 in the spectrum modulation layer 223, and then the first modulation layer 41 is fabricated and then the second modulation layer 42 is fabricated.
In some embodiments, the first modulation layer 41 of the spectrum modulation layer 223 is located on the side of the second modulation layer 42 away from the light emitting device 21, so that the second modulation layer 42 is first fabricated and then the first modulation layer 41 is fabricated.
Based on the same inventive concept, the embodiment of the present application further provides an electronic device, and fig. 27 is a schematic diagram of the electronic device provided in the embodiment of the present application, as shown in fig. 27, where the electronic device includes the light emitting panel 100 provided in any embodiment of the present application. The structure of the light emitting panel 100 is already described in the above embodiments, and will not be described again here. The electronic device provided by the embodiment of the application can be, for example, a mobile phone, a computer, a television, an intelligent wearable device, an AR device or a VR device.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather to enable any modification, equivalent replacement, improvement or the like to be made within the spirit and principles of the invention.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims (16)

1. A light-emitting panel, characterized in that the light-emitting panel comprises a substrate and a plurality of light-emitting pixels located at one side of the substrate; the light emitting pixel includes a light emitting device; wherein,
at least a portion of the light emitting pixels further comprise a color conversion structure located on a side of the light emitting device remote from the substrate; the color conversion structure comprises a main functional layer, wherein the main functional layer comprises a structure in which color conversion layers and medium layers are alternately stacked, and the refractive index of the color conversion layers is different from that of the medium layers.
2. The light-emitting panel according to claim 1, wherein,
at least a portion of the light emitting pixels further include a planarization layer positioned between the color conversion structure and the light emitting device.
3. The light-emitting panel according to claim 1, wherein,
the color conversion structure further comprises a spectrum modulation layer;
one of the spectral modulation layers is located on the side of the main functional layer that is close to the light emitting device and/or one of the spectral modulation layers is located on the side of the main functional layer that is remote from the light emitting device.
4. A light-emitting panel according to claim 3, wherein,
The spectrum modulation layer comprises at least one first modulation layer, and the material of the first modulation layer is the same as that of the color conversion layer; and/or the spectrum modulation layer comprises at least one second modulation layer, and the material of the second modulation layer is the same as that of the medium layer.
5. The light-emitting panel according to claim 4, wherein,
the thickness of the first modulation layer is smaller than that of the color conversion layer.
6. The light-emitting panel according to claim 1, wherein,
in the light emitting pixel including the color conversion structure: the refractive index of the color conversion layer is n 1 The thickness of the color conversion layer is d 1 The refractive index of the dielectric layer is n 2 The thickness of the dielectric layer is d 2 Wherein n is 1 *d 1 ＝n 2 *d 2 。
7. The light-emitting panel according to claim 1, wherein,
the thickness of the color conversion layer is d 1 ，10nm≤d 1 ≤500nm。
8. The light-emitting panel according to claim 1, wherein,
the thickness of each dielectric layer in the main functional layer is equal.
9. The light-emitting panel according to claim 1, wherein,
the color conversion layer comprises a first color conversion layer, and the first color conversion layer emits first color light after being excited by light; the thickness of each first color conversion layer in the main functional layer is the same.
10. The light-emitting panel according to claim 9, wherein,
at least part of the color conversion layers in the luminous pixels further comprise second color conversion layers, and the second color conversion layers emit second color light after being excited by light; the thickness of each of the second color conversion layers in the main functional layer is the same.
11. The light-emitting panel according to claim 10, wherein,
the color conversion layer in at least part of the light-emitting pixels further comprises a third color conversion layer, the third color conversion layer emits third color light after being excited by light, and the thickness of each third color conversion layer in the main functional layer is the same.
12. The light-emitting panel according to claim 1, wherein,
the color conversion layer includes a fourth color conversion layer including at least two color conversion materials that emit different colors of light upon excitation.
13. The light-emitting panel according to claim 1, wherein,
the light emitting pixels comprise red light emitting pixels, and the red light emitting pixels comprise the color conversion structures; wherein the light emitting device in the red light emitting pixel emits blue light or green light.
14. The light-emitting panel according to claim 1, wherein,
the light-emitting pixels comprise red light-emitting pixels and green light-emitting pixels, and the red light-emitting pixels and the green light-emitting pixels comprise the color conversion structure;
the light emitting devices in the red light emitting pixel and the green light emitting pixel each emit blue light.
15. The light-emitting panel according to claim 1, wherein,
the light-emitting pixels comprise white light-emitting pixels, and the white light-emitting pixels comprise the color conversion structures;
the light emitting device in the white light emitting pixel emits blue light or the light emitting device in the white light emitting pixel emits ultraviolet light.
16. An electronic device comprising the light-emitting panel according to any one of claims 1 to 15.
CN202211021937.8A 2022-08-24 2022-08-24 Light-emitting panel and electronic equipment Pending CN117690916A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211021937.8A CN117690916A (en) 2022-08-24 2022-08-24 Light-emitting panel and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211021937.8A CN117690916A (en) 2022-08-24 2022-08-24 Light-emitting panel and electronic equipment

Publications (1)

Publication Number Publication Date
CN117690916A true CN117690916A (en) 2024-03-12

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