CN117672926A - Single-blade type semiconductor substrate cleaning device and cleaning method - Google Patents
Single-blade type semiconductor substrate cleaning device and cleaning method Download PDFInfo
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- CN117672926A CN117672926A CN202410118276.3A CN202410118276A CN117672926A CN 117672926 A CN117672926 A CN 117672926A CN 202410118276 A CN202410118276 A CN 202410118276A CN 117672926 A CN117672926 A CN 117672926A
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- vacuum pump
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- 238000000034 method Methods 0.000 title claims abstract description 98
- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 239000000758 substrate Substances 0.000 title claims abstract description 80
- 238000004140 cleaning Methods 0.000 title claims abstract description 54
- 239000007788 liquid Substances 0.000 claims abstract description 94
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000002699 waste material Substances 0.000 claims abstract description 35
- 238000005507 spraying Methods 0.000 claims abstract description 20
- 238000000926 separation method Methods 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 31
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 239000002351 wastewater Substances 0.000 claims description 11
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 8
- 239000012498 ultrapure water Substances 0.000 claims description 8
- 210000000078 claw Anatomy 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000002894 chemical waste Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000012530 fluid Substances 0.000 description 5
- 238000005086 pumping Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a single-leaf type semiconductor substrate cleaning device, which comprises a process cavity, wherein a gate valve for transferring a semiconductor substrate is arranged on the process cavity, a nozzle for spraying liquid, a shower head for spraying gas and a rotary chuck for fixing the semiconductor substrate are arranged in the process cavity, and the rotary chuck is driven to rotate by a motor; a receiver for receiving waste liquid is arranged in the process cavity, a waste liquid pipeline extending to the outside of the process cavity is arranged on the receiver, and a waste liquid valve is arranged on the waste liquid pipeline; the process cavity is connected with a water ring vacuum pump, the water ring vacuum pump is used for adjusting the air pressure in the process cavity, a vacuum opening and closing valve and a throttle valve are arranged on a pipeline between the process cavity and the water ring vacuum pump, and the water ring vacuum pump is connected with a gas-liquid separation tank. According to the invention, the rotating semiconductor substrate is dried in a vacuum state, so that the drying time is reduced, the production efficiency is improved, and the probability of occurrence of water spots and poor patterns is remarkably reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor substrate cleaning, in particular to a single-blade type semiconductor substrate cleaning device and a cleaning method.
Background
Semiconductor integrated circuits are manufactured by repeating deposition, photolithography, etching, and cleaning processes. In such a process performed separately, since the cleaning process is performed before and after each individual unit process, the number of processes is performed far more than other processes. Moreover, since the pattern is refined and vertically enlarged gradually, it becomes more and more important, and the number of times of performing the cleaning process is also in fact increasing.
The cleaning process is performed in batch type and single-blade type, in which a plurality of semiconductor substrates are processed one by one, and is basically performed in the order of chemical treatment, ultrapure water rinsing, and drying. Recently, as the size of semiconductor substrates becomes larger, the frequency of use of single-blade cleaning process equipment has been increasing. The single-blade cleaning device transfers a semiconductor substrate or a silicon wafer to a process cavity, fixes the semiconductor substrate or the silicon wafer by a rotary chuck or a wafer edge holder, and then sprays chemical to the surface of the semiconductor substrate for a certain time by a nozzle to perform a cleaning process. These nozzles may be individually arranged according to the type of chemical to be treated. Thus, after the chemical treatment is completed, the chemical on the semiconductor surface is rinsed off by the ultrapure water sprayed through the other nozzle. The above-mentioned rinsing process is performed for a certain period of time or more until the chemical components on the surface of the semiconductor substrate are completely removed. In order to immediately remove this water, high-speed spin drying is generally performed using centrifugal force. In this case, most of the water remaining on the semiconductor substrate is released from the substrate surface by centrifugal force, remains as a thin film, and finally dries as natural evaporation.
When such a drying process is performed under atmospheric pressure, generally, in a range from several seconds to several tens of seconds, film-like water moves from the semiconductor substrate to a gas phase by evaporation and diffusion, and finally, drying is performed. At this time, impurities in the air may be dissolved into the thin film of water, or the impurities dissolved in the water itself remain at specific positions on the semiconductor substrate after drying, thereby causing defects to occur. This is commonly referred to as water spotting, which accounts for a significant portion of the failures that occur during semiconductor manufacturing.
CN114425526a discloses a semiconductor wafer-type cleaning device and method, which recovers chemical liquid, reduces the amount of chemical liquid, CN114671489a discloses a semiconductor cleaning device and method, recovers cleaning liquid, reduces resource waste, but neither relates to how to improve the drying speed of semiconductor substrates.
Disclosure of Invention
Aiming at the technical problems, the invention aims at: the single-blade type semiconductor substrate cleaning device is capable of avoiding water spots or other defects on the surface of a semiconductor substrate after being dried, rapidly drying, shortening the cleaning time and improving the working efficiency of cleaning equipment.
In order to achieve the above purpose, the present invention provides the following technical solutions:
the single-blade type semiconductor substrate cleaning device comprises a process cavity, wherein a gate valve for transferring a semiconductor substrate is arranged on the process cavity, a nozzle for spraying liquid, a shower head for spraying gas and a rotating chuck for fixing the semiconductor substrate are arranged in the process cavity, and the rotating chuck is driven to rotate by a motor; a receiver for receiving waste liquid is arranged in the process cavity, a waste liquid pipeline extending to the outside of the process cavity is arranged on the receiver, and a waste liquid valve is arranged on the waste liquid pipeline; the process cavity is connected with a water ring vacuum pump, the water ring vacuum pump is used for adjusting air pressure in the process cavity, a vacuum on-off valve and a throttle valve are arranged on a pipeline between the process cavity and the water ring vacuum pump, the water ring vacuum pump is connected with a gas-liquid separation tank, an exhaust pipe is arranged at the top of the gas-liquid separation tank, a waste water pipeline is arranged at the bottom of the gas-liquid separation tank, a backflow pipeline which flows back to the water ring vacuum pump is arranged on the waste water pipeline, an overflow pipeline which is communicated with the waste water pipeline is arranged at the middle part of the gas-liquid separation tank, and the water ring vacuum pump is connected with an external water supply pipeline.
Preferably, the process chamber is provided with a vacuum detection device for detecting the vacuum degree in the process chamber.
Preferably, the rotary chuck is provided with a clamp type suction cup or an edge clamp.
Preferably, a claw pump or a lobe pump is arranged on the pipeline between the throttle valve and the water ring vacuum pump.
Preferably, a connecting valve and a cyclone gas-liquid separator are sequentially arranged on a pipeline between the process cavity and the vacuum on-off valve.
Preferably, the plurality of process chambers are connected in parallel and then connected to the same water ring vacuum pump.
Preferably, the nozzle is connected to three pipes for providing different liquids and the shower head is connected to three pipes for providing different gases.
A cleaning method for the single-blade semiconductor substrate cleaning device comprises the following steps:
s1, fixing a semiconductor substrate on a rotary chuck;
s2, spraying liquid chemicals to the semiconductor substrate by using a nozzle, opening a waste liquid valve to discharge the chemical waste liquid in the receiver through a waste liquid pipeline, and spraying ultrapure water or isopropanol cleaning residual chemicals to the semiconductor substrate by using the nozzle;
s3, closing the waste liquid valve, opening the vacuum on-off valve, adjusting the throttle valve to maintain the air pressure required in the process cavity, driving the rotary chuck to rotate by the motor, and spraying air to the semiconductor substrate by the shower head.
Preferably, the gas sprayed in S3 is nitrogen and/or isopropanol vapor.
Preferably, the vacuum in the process chamber in S3 is between 50Torr and 100 Torr.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
the invention relates to a single-blade type semiconductor substrate cleaning device, which comprises a process cavity, wherein a gate valve for transferring a semiconductor substrate is arranged on the process cavity, a nozzle for spraying liquid, a shower head for spraying gas and a rotating chuck for fixing the semiconductor substrate are arranged in the process cavity, the process cavity is connected with a water ring vacuum pump, the air pressure in the process cavity is convenient to adjust, the water ring vacuum pump is connected with a gas-liquid separation tank, the rotating semiconductor substrate is dried in a vacuum state, the drying time is shortened, the production efficiency is improved, the consumption of water, isopropanol and nitrogen is reduced, the process productivity is improved, and the probability of water spots and poor patterns is remarkably reduced.
Drawings
The technical scheme of the invention is further described below with reference to the accompanying drawings:
FIG. 1 is a schematic view of a single-blade semiconductor substrate cleaning apparatus according to the present invention;
FIG. 2 is a schematic view of a second embodiment of a single-blade semiconductor substrate cleaning apparatus according to the present invention;
FIG. 3 is a schematic view of a third embodiment of a single-blade semiconductor substrate cleaning apparatus according to the present invention;
FIG. 4 is a schematic view of a cyclone type gas-liquid separator according to a third embodiment of the single-blade type semiconductor substrate cleaning apparatus of the present invention;
fig. 5 is a schematic view of a fourth embodiment of a single-blade semiconductor substrate cleaning apparatus according to the present invention.
Wherein: 100. a process chamber; 101. a gate valve; 102. a shower head; 103. a nozzle; 104. a motor; 105. a receiver; 107. a waste liquid pipe; 110. a semiconductor substrate; 111. a rotating chuck; 130. a water ring vacuum pump; 131. a waste liquid valve; 132. a vacuum on-off valve; 133. a throttle valve; 135. a gas-liquid separation tank; 136. an exhaust pipe; 137. an overflow pipe; 138. a waste water pipe; 139. an external water supply pipe; 140. a claw pump; 141. a lobe pump; 142. a return line; 150. a cyclone gas-liquid separator; 152. a connecting valve; 153. a separator waste liquid valve; 203. the fluids are mixed.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making clear and defining the scope of the present invention.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When a component is considered to be "connected" to another component, it can be directly connected to the other component or intervening components may also be present. When an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Example 1
Referring to fig. 1, the single-blade type semiconductor substrate cleaning apparatus of the present invention comprises a process chamber 100, wherein the process chamber 100 is used for cleaning and drying a semiconductor substrate 110, a gate valve 101 for transferring the semiconductor substrate 110 is provided on the process chamber 100, a nozzle 103 for spraying chemical liquid, a shower head 102 for spraying gas required for drying process, and a spin chuck 111 for fixing the semiconductor substrate 110 are provided in the process chamber 100, the spin chuck 111 is driven to rotate by a motor 104, and the nozzle 103 and the shower head 102 can be moved up and down and left and right to be adjusted to the most suitable spraying position. The nozzle 103 is connected to three pipes for supplying different liquids, which are used for supplying cleaning chemicals, ultrapure water and isopropyl alcohol, respectively, and the shower head 102 is connected to three pipes for supplying different gases, which are used for supplying nitrogen, isopropyl alcohol vapor and surface treatment gas, respectively.
A receiver 105 for receiving waste liquid is installed in the process chamber 100, a waste liquid pipe 107 extending to the outside of the process chamber 100 is connected to the receiver 105, and a waste liquid valve 131 is installed on the waste liquid pipe 107. The process chamber 100 is connected with a water ring vacuum pump 130, and a vacuum on-off valve 132 and a throttle valve 133 are sequentially installed on a pipeline between the process chamber 100 and the water ring vacuum pump 130, so that the pressure in the process chamber 100 can be conveniently regulated. The water ring vacuum pump 130 is connected with a gas-liquid separation tank 135, the top of the gas-liquid separation tank 135 is provided with an exhaust pipe 136, the bottom of the gas-liquid separation tank 135 is connected with a waste water pipeline 138, the waste water pipeline 138 is provided with a backflow pipeline 142 which flows back to the water ring vacuum pump 130, so that the discharged water can be reused, the middle part of the gas-liquid separation tank 135 is provided with an overflow pipeline 137 which is communicated with the waste water pipeline 138, and the water ring vacuum pump 130 is also connected with an external water supply pipeline 139. When the water amount increases due to continuous use, water flows out from the overflow pipe to perform waste liquid treatment, and when the water in the gas-liquid separation tank 135 is insufficient, the water ring vacuum pump 130 is supplied with water using the external water supply pipe 139.
The water ring vacuum pump 130 used in the present invention is configured to continuously compress and discharge the gas flowing into the pump to the outlet, and is capable of maintaining a vacuum even when a liquid chemical, water or small solid powder flows into the pump, unlike a general dry vacuum pump.
The process chamber 100 is provided with a vacuum detecting device for detecting the vacuum degree in the process chamber 100 so as to adjust the process chamber 100 to the most suitable process air pressure.
In a conventional semiconductor substrate cleaning apparatus, a vacuum chuck is used to suck a semiconductor substrate, but in the present invention, the process chamber 100 is already in a vacuum state, so that a clamp chuck or an edge gripper is mounted on the spin chuck 111 to fix the semiconductor substrate.
Example 2
As shown in fig. 2, the present embodiment is different from embodiment 1 in that a claw pump 140 or a lobe pump 141 is connected to a pipe between the throttle valve 133 and the water ring vacuum pump 130 in the present embodiment to perfect the drying process.
In general, the water ring vacuum pump 130 is excellent in pumping capability for a gas containing a liquid, but if the amount of water in the pump is not constant, the pumping speed varies. Therefore, it is difficult to adjust the pressure in the process chamber 100 for processing the semiconductor substrate 110, and thus in order to obtain a high vacuum degree, the claw pump 140 or the lobe pump 141 is connected to the pipe between the throttle valve 133 and the water ring vacuum pump 130, and the vacuum degree is increased and the pumping speed is increased as a whole through the process of compressing the gas again, so that the large capacity gas flow rate can be dealt with, and the variation of the pumping capacity with respect to the water amount of the water ring vacuum pump 130 is significantly reduced, so that the pressure in the process chamber 100 can be stably adjusted.
Example 3
In the single-blade substrate cleaning process, an acid or an alkali chemical is mainly used, and an organic solvent or the like may be used. In this case, a large amount of chemical flows into the water ring vacuum pump 130, resulting in degradation of pump performance or corrosion, etc., which may cause other problems. To prevent this, the present embodiment mounts a gas-liquid separator capable of separating liquid chemicals and gases between the process chamber and the pumping system, and in particular, as shown in fig. 3, mounts a connection valve 152 and a cyclone type gas-liquid separator 150 in sequence on a pipe between the process chamber 100 and the vacuum on-off valve 132, separates the liquid chemicals directly flowing into the water ring vacuum pump 130, and discharges them separately.
The mixed fluid of the gas and the liquid chemical pumped from the process chamber 100 enters the cyclone type gas-liquid separator 150 through the connection valve 152, where the liquid heavier than the gas is accumulated under the cyclone type gas-liquid separator 150, and the gas enters the water ring vacuum pump 130 through the vacuum on-off valve 132 to be pumped. Although the gas contains vapor of the chemical component, the amount is reduced to a very small level compared to the amount of liquid chemical directly flowing into the water ring vacuum pump 130. After all the steps are completed, the vacuum on-off valve 132 is closed, the separator waste liquid valve 153 attached to the lower part of the cyclone type gas-liquid separator 150 is opened, and the waste liquid is discharged downward by the chemicals or water stored in the cyclone type gas-liquid separator 150.
As shown in fig. 4, which is a structural diagram of the cyclone type gas-liquid separator 150, a mixture of gas and liquid pumped by the water ring vacuum pump 130 is effectively separated by a flow of a rotating fluid using a centrifugal force method. The mixed fluid 203 flowing from the process chamber 100 enters the side of the circular cyclone type gas-liquid separator 150 through the introduction pipe, and the flow of the fluid is rotated along the inner cylinder, at which time the heavy liquid collides with the cylinder due to the centrifugal force acting on the surface of the cylinder, flows downward, and is accumulated at the bottom 202. The continuously rotating gas is significantly reduced in rotational velocity in the middle portion of the cyclonic gas-liquid separator 150, discharged upward, and pumped through the water ring vacuum pump 130. At this time, the stored chemicals are discharged downward to treat waste liquid, and can be recovered again for reuse.
Example 4
As shown in fig. 5, in the present embodiment, the process chambers 100 have a plurality of process chambers 100, and the plurality of process chambers 100 are connected in parallel and then connected to the same water ring vacuum pump 130, so as to maintain operation all the time. In general, a single-wafer cleaning or chemical processing apparatus used in a semiconductor manufacturing process uses various chemicals and process types are relatively diverse, so that a plurality of process chambers 100 are generally installed on one apparatus for use. In addition, in a single-blade substrate processing apparatus used in a large-scale production facility, a plurality of chambers for performing the same process are generally used in order to improve the production efficiency. In this case, if one water ring vacuum pump 130 is connected to each process chamber 100, the water amount and power consumption will increase, and the apparatus and piping will become complicated, making it difficult to perform maintenance. The embodiment enables the device to be more energy-saving and efficient.
The cleaning method for the single-blade semiconductor substrate cleaning device comprises the following steps:
s1, fixing a semiconductor substrate 110 on a rotary chuck 111;
s2, spraying liquid chemicals to the semiconductor substrate 110 by the nozzle 103, opening the waste liquid valve 131 to discharge the chemical waste liquid in the receiver 105 through the waste liquid pipeline 107, and spraying ultrapure water or isopropanol cleaning residual chemicals to the semiconductor substrate 110 by the nozzle 103;
s3, closing the waste liquid valve 131, opening the vacuum on-off valve 132, adjusting the throttle valve 133 to maintain the air pressure required in the process chamber 100, driving the rotary chuck 111 to rotate at high speed by the motor 104, and spraying air to the semiconductor substrate 110 by the shower head 102 to quickly dry the residual moisture or chemical on the semiconductor substrate 110.
The gas injected in S3 is nitrogen and/or isopropanol vapor, which may be provided only in order to maximize the marangoni effect.
The cleaning of the semiconductor substrate 110 is not necessarily performed under normal pressure, but is performed mainly under atmospheric pressure at present, and therefore, the vacuum on-off valve 132 connected to the water ring vacuum pump 130 is closed. In this case, the waste liquid valve 131 for discharging the chemical may be opened to perform the waste liquid discharge of the chemical. Of course, the vacuum on-off valve 132 may be opened, the throttle valve 133 may be opened by a small amount, and the chemical may be discharged by the water ring vacuum pump 130. The chemicals remaining on the semiconductor substrate 110 are washed with ultrapure water, and rinsing treatment is performed again with isopropyl alcohol as necessary for the subsequent drying process. The injected water and isopropyl alcohol in a liquid state are introduced into the water ring vacuum pump 130 together with nitrogen gas while being sucked, and the gas and liquid re-discharged from the water ring vacuum pump 130 are separated into gas and liquid again in the gas-liquid separation tank 135, and the gas is introduced into the exhaust pipe 136, and the liquid is introduced into the waste water pipe 138.
In order to prevent water spots when drying the semiconductor substrate 110, the present invention reduces the pressure in the process chamber 100, increases the number of rotations of the spin chuck 111, increases the flow rate of gas on the semiconductor substrate 110 with the same amount of gas sprayed, and increases the diffusion rate of ultra-pure water or isopropyl alcohol evaporated from the semiconductor substrate 110 to the gas phase, thereby increasing the drying rate of the semiconductor substrate 110.
The high-speed spin-drying process is performed at normal pressure for several seconds to several tens of seconds, and a thin film of water, which is easily confirmed by naked eyes, is present on the semiconductor substrate 110, disappears from the edge of the semiconductor substrate 110, and finally, only exists in the middle portion, and disappears after the drying is completed. When the drying process is performed in a vacuum state, the drying time is reduced. The rapid drying process has not only an advantage of improving productivity, but also a reduction in water spots generated during the drying process, defects of a specific pattern in the semiconductor substrate 110 due to the water spots, and the like. The cleaning apparatus of the present invention uses the water ring vacuum pump 130 to create a vacuum that cannot be reduced below the vapor pressure corresponding to the water temperature used by the water ring vacuum pump 130 and thus remains at a relatively low vacuum level, approximately between 50Torr and 100 Torr. In this case, the diffusion coefficient of water molecules in the gas is about 10 times greater than that of the normal pressure condition, and the evaporation rate of water is about 10 times faster than that of the same gas flow, which means that the drying rate is about 10 times that of the normal pressure, and the time for which water exists in the form of a thin film on the substrate is about one tenth as compared with the process performed under the normal pressure, and the probability of occurrence of water spots and pattern defects is remarkably reduced.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related arts are included in the scope of the present invention.
Claims (10)
1. A single-blade semiconductor substrate cleaning device, characterized in that: the semiconductor substrate transfer device comprises a process cavity, wherein a gate valve for transferring a semiconductor substrate is arranged on the process cavity, a nozzle for spraying liquid, a shower head for spraying gas and a rotary chuck for fixing the semiconductor substrate are arranged in the process cavity, and the rotary chuck is driven to rotate by a motor; a receiver for receiving waste liquid is arranged in the process cavity, a waste liquid pipeline extending to the outside of the process cavity is arranged on the receiver, and a waste liquid valve is arranged on the waste liquid pipeline; the process cavity is connected with a water ring vacuum pump, the water ring vacuum pump is used for adjusting air pressure in the process cavity, a vacuum on-off valve and a throttle valve are arranged on a pipeline between the process cavity and the water ring vacuum pump, the water ring vacuum pump is connected with a gas-liquid separation tank, an exhaust pipe is arranged at the top of the gas-liquid separation tank, a waste water pipeline is arranged at the bottom of the gas-liquid separation tank, a backflow pipeline which flows back to the water ring vacuum pump is arranged on the waste water pipeline, an overflow pipeline which is communicated with the waste water pipeline is arranged at the middle part of the gas-liquid separation tank, and the water ring vacuum pump is connected with an external water supply pipeline.
2. The single-blade semiconductor substrate cleaning apparatus according to claim 1, wherein: the process cavity is provided with a vacuum detection device for detecting the vacuum degree in the process cavity.
3. The single-blade semiconductor substrate cleaning apparatus according to claim 1, wherein: the rotary chuck is provided with a clamp type sucker or an edge clamp.
4. The single-blade semiconductor substrate cleaning apparatus according to claim 1, wherein: and a claw pump or a cam pump is arranged on a pipeline between the throttle valve and the water ring vacuum pump.
5. The single-blade semiconductor substrate cleaning apparatus according to claim 1, wherein: and a connecting valve and a cyclone gas-liquid separator are sequentially arranged on a pipeline between the process cavity and the vacuum on-off valve.
6. The single-blade semiconductor substrate cleaning apparatus according to claim 1, wherein: the process chambers are connected in parallel and then connected to the same water ring vacuum pump.
7. The single-blade semiconductor substrate cleaning apparatus according to claim 1, wherein: the nozzle is connected to three pipes for providing different liquids and the shower head is connected to three pipes for providing different gases.
8. A cleaning method for the single-blade semiconductor substrate cleaning apparatus according to any one of claims 1 to 7, comprising the steps of:
s1, fixing a semiconductor substrate on a rotary chuck;
s2, spraying liquid chemicals to the semiconductor substrate by using a nozzle, opening a waste liquid valve to discharge the chemical waste liquid in the receiver through a waste liquid pipeline, and spraying ultrapure water or isopropanol cleaning residual chemicals to the semiconductor substrate by using the nozzle;
s3, closing the waste liquid valve, opening the vacuum on-off valve, adjusting the throttle valve to maintain the air pressure required in the process cavity, driving the rotary chuck to rotate by the motor, and spraying air to the semiconductor substrate by the shower head.
9. The cleaning method according to claim 7, characterized in that: the gas sprayed in S3 is nitrogen and/or isopropanol vapor.
10. The cleaning method according to claim 7, characterized in that: the vacuum degree in the process cavity in the step S3 is between 50Torr and 100 Torr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410118276.3A CN117672926A (en) | 2024-01-29 | 2024-01-29 | Single-blade type semiconductor substrate cleaning device and cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410118276.3A CN117672926A (en) | 2024-01-29 | 2024-01-29 | Single-blade type semiconductor substrate cleaning device and cleaning method |
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| Publication Number | Publication Date |
|---|---|
| CN117672926A true CN117672926A (en) | 2024-03-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410118276.3A Pending CN117672926A (en) | 2024-01-29 | 2024-01-29 | Single-blade type semiconductor substrate cleaning device and cleaning method |
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| CN (1) | CN117672926A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5331987A (en) * | 1991-11-14 | 1994-07-26 | Dainippon Screen Mfg. Co. Ltd. | Apparatus and method for rinsing and drying substrate |
| US5520744A (en) * | 1993-05-17 | 1996-05-28 | Dainippon Screen Manufacturing Co., Ltd. | Device for rinsing and drying substrate |
| JP2005349301A (en) * | 2004-06-10 | 2005-12-22 | Seiko Epson Corp | Washing device and washing method |
| JP2007012998A (en) * | 2005-07-01 | 2007-01-18 | Dainippon Screen Mfg Co Ltd | Substrate cleaner and substrate processing system with same |
| CN101314158A (en) * | 2007-05-28 | 2008-12-03 | 爱斯佩克株式会社 | Washing drying apparatus |
-
2024
- 2024-01-29 CN CN202410118276.3A patent/CN117672926A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5331987A (en) * | 1991-11-14 | 1994-07-26 | Dainippon Screen Mfg. Co. Ltd. | Apparatus and method for rinsing and drying substrate |
| US5520744A (en) * | 1993-05-17 | 1996-05-28 | Dainippon Screen Manufacturing Co., Ltd. | Device for rinsing and drying substrate |
| JP2005349301A (en) * | 2004-06-10 | 2005-12-22 | Seiko Epson Corp | Washing device and washing method |
| JP2007012998A (en) * | 2005-07-01 | 2007-01-18 | Dainippon Screen Mfg Co Ltd | Substrate cleaner and substrate processing system with same |
| CN101314158A (en) * | 2007-05-28 | 2008-12-03 | 爱斯佩克株式会社 | Washing drying apparatus |
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