CN117665416A - Low-frequency electric field measuring device and measuring method based on doping material atomic air chamber - Google Patents
Low-frequency electric field measuring device and measuring method based on doping material atomic air chamber Download PDFInfo
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- CN117665416A CN117665416A CN202311583561.4A CN202311583561A CN117665416A CN 117665416 A CN117665416 A CN 117665416A CN 202311583561 A CN202311583561 A CN 202311583561A CN 117665416 A CN117665416 A CN 117665416A
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- 230000005684 electric field Effects 0.000 title claims abstract description 65
- 239000000463 material Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 12
- 150000001340 alkali metals Chemical group 0.000 claims abstract description 62
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 56
- 238000001514 detection method Methods 0.000 claims abstract description 36
- 230000008878 coupling Effects 0.000 claims abstract description 20
- 238000010168 coupling process Methods 0.000 claims abstract description 20
- 238000005859 coupling reaction Methods 0.000 claims abstract description 20
- 238000005259 measurement Methods 0.000 claims abstract description 17
- 238000000691 measurement method Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 230000005540 biological transmission Effects 0.000 claims description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000002019 doping agent Substances 0.000 claims description 11
- 238000001228 spectrum Methods 0.000 claims description 10
- 230000009471 action Effects 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 230000010287 polarization Effects 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
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- 239000011787 zinc oxide Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 8
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Abstract
The invention relates to a low-frequency electric field measuring device and a measuring method based on a doped material atomic gas chamber. According to the invention, the detection light and the coupling light excite the alkali metal atoms in the alkali metal atom gas chamber to the Redberg state, and the Redberg atoms are utilized to measure the low-frequency electric field, so that the low-frequency electric field is measured by an all-optical regulation and control measurement scheme, and interference errors caused by a metal electrode measurement method can be avoided; according to the invention, the doped end face is irradiated by the irradiation light source, so that the electric field shielding effect in the atomic gas chamber is eliminated through light field regulation and control, and the production cost and the processing difficulty of the atomic gas chamber are reduced.
Description
Technical Field
The invention relates to the technical field of atomic spectroscopy and precision measurement, in particular to a low-frequency electric field measurement device and a low-frequency electric field measurement method based on a doping material atomic gas chamber.
Background
The low-frequency wave band electromagnetic wave with the kHz magnitude can penetrate through water and soil with certain thickness, meanwhile, the low-frequency electromagnetic wave can propagate in a space waveguide formed between the ground and the earth ionosphere, propagation attenuation is small, amplitude and phase are stable, and the low-frequency wave band electromagnetic wave device becomes an important research object in the field of communication. The traditional electric field measurement of the low-frequency electromagnetic wave adopts metal electrodes for measurement, and the metal electrodes can interfere with the low-frequency electric field, so that the accuracy of a measurement result is affected.
The electric field receiving mode based on the Redberg atoms can convert space electric field information to the change of detection light through resonance coupling between the space electric field information and the Redberg energy, and can accurately measure the information such as electric field intensity, phase and the like through the electromagnetic induction transparent effect, the Autler-Townes splitting effect, the alternating current Stark effect, the atomic superheterodyne and other technical means in the electric field.
However, during the preparation of the reed-burg atoms, the reed-burg atoms may partially ionize, causing some residual charge to adhere to the inner walls of the atomic gas cell. When the atomic gas is in the low-frequency electric field of the measuring kHz magnitude, the residual charges accumulated on the inner wall of the atomic gas can generate polarization effect and are rearranged under the action of the external low-frequency electric field, so that an equipotential shielding layer is formed, the interaction between the external electric field and the Redberg atoms in the air chamber is blocked, and the measuring is failed.
Disclosure of Invention
In order to solve the technical problems in the prior art, the invention aims to provide a low-frequency electric field measuring device and a method based on a doping material atomic gas chamber, which avoid the generation of an equipotential shielding layer in the gas chamber during the preparation of the Redberg atoms and influence the measurement of the low-frequency electric field measuring device.
In order to achieve the above object, the present invention provides a low-frequency electric field measuring device based on a dopant material atomic gas chamber, comprising:
the alkali metal atomic gas chamber comprises a first laser transmission end face, a second laser transmission end face and a doping end face, wherein the first laser transmission end face and the second laser transmission end face are oppositely arranged, the doping end face is arranged between the first laser transmission end face and the second laser transmission end face, and the doping end face is made of semitransparent doping materials; alkali metal vapor is filled in the alkali metal atom gas chamber;
the detection light laser is used for emitting detection light;
a coupled light laser for emitting coupled light;
the first dichroic mirror is arranged on the outer side of the first laser light transmission end face, and the detection light laser and the first dichroic mirror are arranged on the same side of the alkali metal atom gas chamber; the first dichroic mirror reflects the detection light and transmits the coupling light;
the second dichroic mirror is arranged outside the second laser light transmission end face, and the coupled light laser and the second dichroic mirror are arranged on the same side of the alkali metal atom gas chamber; the second dichroic mirror reflects the coupled light and transmits the detection light;
the detection light and the coupling light are reversely collinear through the first dichroic mirror and the second dichroic mirror and coincide in the alkali metal atom gas chamber;
the photoelectric detector is arranged on the outer side of the second dichroic mirror and is used for receiving the detection light and converting the optical signal into an electric signal;
the irradiation light source is arranged at the outer side of the alkali metal atom air chamber and irradiates the doped end face with excitation light to generate charges.
According to one technical scheme of the invention, the semitransparent doped material is rutile phase titanium dioxide monocrystal or zinc oxide monocrystal material.
According to one technical scheme of the invention, the rutile phase titanium dioxide monocrystal is obtained by means of nonmetallic element doping or heating treatment under the anoxic condition.
According to one technical scheme of the invention, the first laser transmitting end face, the second laser transmitting end face and the doping end face enclose a closed cavity, and the closed cavity is packaged in a sealing packaging mode to form the alkali metal atomic gas chamber.
According to one technical scheme of the invention, the irradiation light source is a laser light source or a non-coherent light source.
According to an aspect of the present invention, there is provided a low-frequency electric field measurement method based on a dopant material atomic gas chamber, for the above-mentioned low-frequency electric field measurement device based on a dopant material atomic gas chamber, comprising the steps of:
s1, acquiring an EIT spectrum of the detection light;
step S2, exciting alkali metal atoms in the alkali metal atom gas chamber to a Redberg state by detection light and coupling light;
s3, applying an electric field to be detected to the alkali metal atom air chamber, and irradiating the doped end face through the irradiation light source until the photoelectric detector outputs a stable electric signal;
and S4, calculating the field intensity of the electric field to be detected according to the electric signal output by the photoelectric detector and the EIT spectrum of the detection light.
According to one technical scheme of the invention, the field strength calculation formula of the electric field to be measured is as follows:
wherein Δf Stark To be under the action of electric fieldThe displacement of the magnetic induction transparent spectrum, alpha is the atomic polarizability, and the value and the number n of main quanta 7 Proportional, |E| is the strength of the electric field applied to the Redberg atoms.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a low-frequency electric field measuring device and a measuring method based on an atomic gas chamber of a doping material. The invention uses the laser emitted by the detection laser and the coupling light laser to overlap in the alkali metal atom gas chamber in a reverse collineation mode through the two dichroic mirrors, excites the alkali metal atoms in the alkali metal atom gas chamber to a Redberg state, and uses the coupling of the Redberg atoms and an external tested electric field to generate Stark effect, thereby realizing the measurement of the intensity of the external low-frequency electric field.
According to the invention, the irradiation light source is doped with the end face to generate photo-generated charges, and a local electric field is formed in the alkali metal atom air chamber, so that the electric field shielding effect formed by the equipotential layer in the alkali metal atom air chamber is eliminated, a metal electrode is not required to be arranged in the alkali metal atom air chamber, the processing technology of the alkali metal atom air chamber is simplified, and the processing difficulty and the processing cost of the alkali metal atom air chamber are reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments will be briefly described below. It is apparent that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 schematically shows a structural diagram of a low-frequency electric field measuring apparatus based on a dopant material atomic gas chamber provided in one embodiment according to the present invention.
1. An alkali metal atom gas cell; 2. doping the end face; 3. a probe light laser; 4. a coupled light laser; 5. a first dichroic mirror; 6. a second dichroic mirror; 7. a photodetector; 8. and irradiating the light source.
Detailed Description
The description of the embodiments of this specification should be taken in conjunction with the accompanying drawings, which are a complete description of the embodiments. In the drawings, the shape or thickness of the embodiments may be enlarged and indicated simply or conveniently. Furthermore, portions of the structures in the drawings will be described in terms of separate descriptions, and it should be noted that elements not shown or described in the drawings are in a form known to those of ordinary skill in the art.
Any references to directions and orientations in the description of the embodiments herein are for convenience only and should not be construed as limiting the scope of the invention in any way. The following description of the preferred embodiments will refer to combinations of features, which may be present alone or in combination, and the invention is not particularly limited to the preferred embodiments. The scope of the invention is defined by the claims.
As shown in fig. 1, the present invention provides a low-frequency electric field measuring device based on a dopant atom cell, comprising an alkali metal atom cell 1, a probe light laser 3, a coupled light laser 4, a first dichroic mirror 5, a second dichroic mirror 6, a photodetector 7, and an irradiation light source 8.
The alkali metal atom gas chamber 1 comprises a first laser transmission end face, a second laser transmission end face and a doping end face 2 which are oppositely arranged, wherein the doping end face 2 is arranged between the first laser transmission end face and the second laser transmission end face, and the doping end face 2 is made of semitransparent doping materials. The alkali metal vapor is contained in the alkali metal atom gas chamber 1.
The probe light laser 3 is for emitting probe light. The coupled light laser 4 is for emitting coupled light. The detection light laser 2 may be 852nm laser, and the coupling light laser 4 may be 509nm laser. By adjusting the wavelength of the coupling light emitted from the coupling light laser 4, the alkali metal atoms in the alkali metal atom cell 1 can be excited to a specific reed burg energy level.
The first dichroic mirror 5 is arranged on the outer side of the first laser light transmitting end surface, and the detection light laser 3 and the first dichroic mirror 5 are arranged on the same side of the alkali metal atom gas chamber 1; the first dichroic mirror 5 reflects the detection light and transmits the coupling light.
The second dichroic mirror 6 is arranged outside the second laser light transmitting end face, and the coupled light laser 4 and the second dichroic mirror 6 are arranged on the same side of the alkali metal atom gas chamber 1; the second dichroic mirror 6 reflects the coupled light and transmits the detection light.
The detection light and the coupling light are reversely collinear by the first dichroic mirror 5 and the second dichroic mirror 6, and coincide within the alkali metal atom cell 1.
A photodetector 7 is provided outside the second dichroic mirror 6 for receiving the detection light, and converts the optical signal into an electrical signal. The photodetector 7 may be connected to an oscilloscope, which detects the excitation of atoms to the reed burg state by the display of the oscilloscope.
The irradiation light source 8 is arranged outside the alkali metal atom air chamber 1, and irradiates the doped end face 2 to excite photo-generated charges.
The detection light and the coupling light are used for exciting atoms in the atomic gas chamber to prepare the Redberg state atoms, and the Redberg state atoms are very close to the ionization threshold value of the atoms, so that the atoms which are partially ionized in the preparation process of the Redberg atoms are adsorbed on the inner wall surface of the atomic gas chamber, and charged particles are polarized by a low-frequency or electrostatic field under the action of an external kHz low-frequency or electrostatic field and are rearranged along the inner surface to form an equipotential shielding layer, so that the Redberg atoms in the atomic gas chamber cannot interact with the external electric field, and finally, the sensing failure is caused.
According to the invention, illumination is provided for the doped material through the irradiation light source 8, photo-generated charges are generated through photo-excitation, a local electric field is generated at the inner side of the doped end face 2, photo-generated electrons and photo-generated holes react with charged particles adsorbed on the inner wall of the alkali metal atom air chamber 1, the redistribution of charges on the inner surface of the atom air chamber is regulated, an original equipotential layer caused by the polarization of the charges on the inner wall of the low-frequency electric field is broken, and the electric field shielding effect is eliminated. The external low-frequency electric field to be detected can enter an atomic gas chamber to be coupled with the Redberg atoms, the quantum state change of the Redberg atoms is read through detection light, the electromagnetic wave information is extracted, and the electric field measurement is completed.
According to one technical scheme of the invention, the semitransparent doping material is rutile phase titanium dioxide monocrystal or zinc oxide monocrystal material.
According to one embodiment of the invention, the rutile titanium dioxide single crystal is obtained by means of non-metallic doping or heat treatment under anoxic conditions.
According to one technical scheme of the invention, the first laser transmitting end face, the second laser transmitting end face and the doping end face 2 enclose a closed cavity, and the closed cavity is packaged in a sealing packaging mode to form the alkali metal atom air chamber 1. The first laser transmitting end face, the second laser transmitting end face and the doped end face 2 can form a closed cavity through glue sealing or other packaging modes. The manufacturing process of the alkali metal atom air chamber 1 consisting of the first laser transmitting end face, the second laser transmitting end face and the doping end face 2 is simple, electrodes are not needed to be added into the alkali metal atom air chamber 1, and vacuum packaging is carried out, so that the processing difficulty and the processing cost of the alkali metal atom air chamber are greatly reduced.
According to one technical scheme of the invention, the irradiation light source 8 is a laser light source or a non-coherent light source, the non-coherent light source can adopt an LED lamp and the like, and the intensity, the action range and the action time of the local electric field generated by the irradiation of the irradiation light source 8 by irradiating the doped end face 2 can be controlled by adjusting the external current connected to the irradiation light source 8.
According to an aspect of the present invention, there is provided a low-frequency electric field measurement method based on a dopant material atomic gas chamber, for the above-mentioned low-frequency electric field measurement device based on a dopant material atomic gas chamber, comprising the steps of:
s1, acquiring an EIT spectrum of the detection light;
step S2, exciting alkali metal atoms in the alkali metal atom gas chamber 1 to a Redberg state by detection light and coupling light;
the detection light laser 3 and the coupling light laser 4 respectively emit detection light and coupling light, and the detection light and the coupling light respectively reach the alkali metal atom gas chamber 1 through the first dichroic mirror 5 and the second dichroic mirror 6 and are coupled with alkali metal to excite the alkali metal atom to a reed burg state. The photodetector 7 may be connected to an oscilloscope, and the excitation of atoms in the alkali metal atom cell 1 to the reed burg state may be detected by the EIT spectrum of the display probe light of the oscilloscope.
S3, applying an electric field to be detected to the alkali metal atom gas chamber 1, and irradiating the doped end face 2 through an irradiation light source 8 until the photoelectric detector 7 outputs a stable electric signal;
the reed-burg atoms have the property of being sensitive to the response of an external field. An electric field to be measured is applied to the alkali metal atom gas chamber 1, and the electric field to be measured is coupled with the Redberg atoms to generate a Stark effect so as to generate a frequency shift of detection light passing through the alkali metal atom gas chamber 1. However, when the inner wall of the alkali metal atom gas chamber 1 generates electrostatic shielding effect due to the existence of the equipotential layer for adsorbing the charged particles, the electric field to be detected cannot enter the alkali metal atom gas chamber 1, the Stark effect is not generated in the alkali metal atom gas chamber 1, and the Stark frequency shift cannot be detected by the photoelectric detector 7. The doped end face 2 is irradiated by the irradiation light source 8, and local charges are generated on the inner wall of the alkali metal atom air chamber 1 to eliminate electrostatic shielding effect, so that an electric field to be measured can enter the alkali metal atom air chamber 1, and the electric field to be measured can be conveniently measured.
And S4, calculating the field intensity of the electric field to be measured according to the electric signal output by the photoelectric detector 7 and the EIT spectrum of the detection light.
According to one technical scheme of the invention, a field strength calculation formula of an electric field to be measured is as follows:
wherein Δf Stark In order to shift the atomic electromagnetic induction transparent spectrum under the action of an electric field, alpha is the atomic polarization rate and takes on the value of the atomic polarization rate and the number n of main quanta 7 Proportional, |E| is the strength of the electric field applied to the Redberg atoms.
In this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or terminal device comprising the element.
It is finally pointed out that the above description of the preferred embodiments of the invention, it being understood that although preferred embodiments of the invention have been described, it will be obvious to those skilled in the art that, once the basic inventive concepts of the invention are known, several modifications and adaptations can be made without departing from the principles of the invention, and these modifications and adaptations are intended to be within the scope of the invention. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the invention.
Claims (7)
1. A low frequency electric field measurement device based on a dopant material atomic gas cell, comprising:
an alkali metal atomic gas chamber (1) comprising a first laser transmission end face, a second laser transmission end face and a doping end face (2) arranged between the first laser transmission end face and the second laser transmission end face, wherein the first laser transmission end face, the second laser transmission end face and the doping end face (2) are arranged oppositely, and the doping end face (2) is made of semitransparent doping materials; the alkali metal atom air chamber (1) is internally provided with alkali metal steam;
a probe light laser (3) for emitting probe light;
a coupled light laser (4) for emitting coupled light;
the first dichroic mirror (5) is arranged outside the first laser light transmission end face, and the detection light laser (3) and the first dichroic mirror (5) are arranged on the same side of the alkali metal atom gas chamber (1); the first dichroic mirror (5) reflects the detection light and transmits the coupling light;
a second dichroic mirror (6) disposed outside the second laser light transmitting end face, the coupled light laser (4) and the second dichroic mirror (6) being disposed on the same side of the alkali metal atom gas cell (1); the second dichroic mirror (6) reflects the coupled light and transmits the detection light;
the detection light and the coupling light are reversely colinear through the first dichroic mirror (5) and the second dichroic mirror (6) and coincide in the alkali metal atom gas chamber (1);
a photodetector (7) disposed outside the second dichroic mirror (6) for receiving the detection light and converting an optical signal into an electrical signal;
the irradiation light source (8) is arranged outside the alkali metal atom air chamber (1) and irradiates the doped end face (2) to excite photo-generated charges.
2. The low-frequency electric field measurement device based on a doped material atomic gas cell according to claim 1, wherein the semitransparent doped material is a rutile phase titanium dioxide single crystal, zinc oxide single crystal material.
3. The low-frequency electric field measurement device based on a doped material atomic gas cell according to claim 2, wherein the rutile phase titanium dioxide single crystal is obtained by means of non-metallic element doping or heat treatment under anoxic conditions.
4. The low-frequency electric field measurement device based on the doping material atomic gas chamber according to claim 1, wherein the first laser transmitting end face, the second laser transmitting end face and the doping end face (2) enclose a closed cavity, and are packaged in a sealing packaging mode to form the alkali metal atomic gas chamber (1).
5. The low-frequency electric field measurement device based on a dopant atomic gas cell according to claim 4, characterized in that the irradiation light source (8) is a laser light source or a incoherent light source.
6. A measurement method using the dopant atomic gas cell-based low frequency electric field measurement apparatus according to any one of claims 1 to 5, comprising the steps of:
s1, acquiring an EIT spectrum of the detection light;
step S2, exciting alkali metal atoms in the alkali metal atom gas chamber (1) to a Redberg state by detection light and coupling light;
s3, applying an electric field to be detected to the alkali metal atom gas chamber (1), and irradiating the doped end face (2) through the irradiation light source (8) until the photoelectric detector (7) outputs a stable electric signal;
and S4, calculating the field intensity of the electric field to be detected according to the electric signal output by the photoelectric detector (7) and the EIT spectrum of the detection light.
7. The method for measuring a low-frequency electric field based on a dopant material atomic gas cell according to claim 6, wherein the field strength calculation formula of the electric field to be measured is:
wherein Δf Stark In order to shift the atomic electromagnetic induction transparent spectrum under the action of an electric field, alpha is the atomic polarization rate and takes on the value of the atomic polarization rate and the number n of main quanta 7 Proportional, |E| is the strength of the electric field applied to the Redberg atoms.
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| CN111710688A (en) * | 2020-06-28 | 2020-09-25 | 宁波飞芯电子科技有限公司 | Detector pixel unit, image sensor and detection method |
| CN112415284A (en) * | 2020-11-04 | 2021-02-26 | 中国人民解放军国防科技大学 | Portable microwave electric field measuring device based on rydberg atoms |
| CN113376449A (en) * | 2021-06-08 | 2021-09-10 | 合肥衡元量子技术有限公司 | Low-frequency microwave electric field sensor based on rydberg atoms and detection method |
| CN115561518A (en) * | 2022-11-16 | 2023-01-03 | 中国人民解放军国防科技大学 | Electromagnetic wave frequency measuring method and device based on rydberg atoms |
| CN115727936A (en) * | 2022-11-07 | 2023-03-03 | 北京自动化控制设备研究所 | Magnetic Johnson noise testing device based on atomic sensing |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111710688A (en) * | 2020-06-28 | 2020-09-25 | 宁波飞芯电子科技有限公司 | Detector pixel unit, image sensor and detection method |
| CN112415284A (en) * | 2020-11-04 | 2021-02-26 | 中国人民解放军国防科技大学 | Portable microwave electric field measuring device based on rydberg atoms |
| CN113376449A (en) * | 2021-06-08 | 2021-09-10 | 合肥衡元量子技术有限公司 | Low-frequency microwave electric field sensor based on rydberg atoms and detection method |
| CN115727936A (en) * | 2022-11-07 | 2023-03-03 | 北京自动化控制设备研究所 | Magnetic Johnson noise testing device based on atomic sensing |
| CN115561518A (en) * | 2022-11-16 | 2023-01-03 | 中国人民解放军国防科技大学 | Electromagnetic wave frequency measuring method and device based on rydberg atoms |
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