CN117650429A - PCSEL composite chip based on micro-lens relief grating and preparation method - Google Patents
PCSEL composite chip based on micro-lens relief grating and preparation method Download PDFInfo
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Abstract
The invention discloses a PCSEL composite chip based on a micro-lens relief grating and a preparation method thereof, wherein an epitaxial structure comprises an N-type electrode, an N-type InP substrate and an N-type Al which are sequentially arranged from bottom to top x1 In 1‑x1 As lower confinement layer, quantum well active region, P-type Al y In 1‑y As electron blocking layer, P-type Ga z1 In 1‑z1 As z2 P 1‑z2 Functional layer, P-type Al x2 In 1‑x2 An As upper confinement layer, a P-type InP connection layer, a microlens and a P-type electrode; etching a two-dimensional photonic crystal on the P-type GaInAsP functional layer, and vertically emitting a single-mode light beam through Bragg diffraction conditions; and etching a one-dimensional relief grating on the micro lens to regulate and control the polarization characteristic of the emergent laser beam. The invention can effectively improve the orthogonal polarization ratio, further reduce the beam divergence angle, and realize the PCSEL composite chip with low divergence angle and high beam quality for stably outputting the linearly polarized light beam.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a PCSEL composite chip based on a micro-lens relief grating and a preparation method thereof.
Background
The Photonic Crystal Surface Emitting Laser (PCSEL) is a very potential semiconductor laser, combines the advantages of the edge emitting laser and the vertical cavity surface emitting laser, has the advantages of high power, two-dimensional beam steering, low divergence angle, good single mode property, simple structure, large emergent area and the like, and is widely applied to the fields of information transmission, laser radar, medical sensing, gas detection, laser processing, laser ranging, optical induction fluorescence, optical fiber communication systems and the like.
For the traditional semiconductor laser, although the edge-emitting laser can realize the output polarized light beam, the edge-emitting laser still has the problems of large divergence angle, elliptical spot shape and the like; the divergence angle of the vertical cavity surface emitting laser is smaller, the spot shape is circular, but only a two-dimensional polarized light beam can be output. PCSEL improves both of the problems and can realize the output of high-power and high-beam quality light beams.
The currently reported PCSEL chip output light beam is also polarized in two dimensions, cannot be suitable for application to different polarization states under special conditions, and is difficult to meet the polarization regulation and control requirements of future semiconductor laser diversification.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides a PCSEL composite chip based on a micro-lens relief grating and a preparation method thereof.
The invention discloses a PCSEL composite chip based on a micro-lens relief grating, wherein the epitaxial structure of the PCSEL composite chip comprises an N-type electrode, an N-type InP substrate and an N-type Al which are sequentially arranged from bottom to top x1 In 1-x1 As lower confinement layer, quantum well active region, P-type Al y In 1-y As electron blocking layer, P-type Ga z1 In 1-z1 As z2 P 1-z2 Functional layer, P-type Al x2 In 1-x2 The device comprises an As upper limiting layer and a P-type InP connecting layer, wherein a micro lens and a P-type electrode are arranged on the upper surface of the P-type InP connecting layer; etching a two-dimensional photonic crystal on the P-type GaInAsP functional layer, and vertically emitting a single-mode light beam under the Bragg diffraction condition; and etching a one-dimensional relief grating on the micro lens to regulate and control the polarization characteristic of the emergent laser beam.
As a further improvement of the invention, the two-dimensional photonic crystal comprises one of a single-lattice two-dimensional photonic crystal, a double-lattice two-dimensional photonic crystal and a multi-lattice two-dimensional photonic crystal, and the characteristic parameters of different lattice units are 300 nm-500 nm.
As a further improvement of the invention, the lattice unit of the two-dimensional photonic crystal consists of air holes with different shapes, including one or more of circles, triangles, diamonds, ovals, parallelograms, trapezoids, pentagons, hexagons and sectors, and the different lattice units consist of air holes with different etching depths and different shapes, and the etching depth is 300 nm-1100 nm.
As a further improvement of the present invention, the aperture shape of the one-dimensional relief grating corresponding from top to bottom is one of square, round and polygonal, and the microlens relief grating is adjacent to the P-type electrode.
As a further improvement of the invention, the dimensional parameters of the one-dimensional relief grating are based on the bragg resonance condition λ=2n eff Calculating T; wherein lambda is the free space Bragg wavelength, n eff The average effective refractive index is obtained, and T is the grating period; the period of the obtained one-dimensional relief grating is 170 nm-210 nm, the duty ratio is 40% -60%, and the etching depth is 2 mu m-4 mu m.
As a further improvement of the present invention, the thickness of the microlens is 2 μm to 4 μm, the overall length is 300 μm to 400 μm, and the radius of curvature is 50 μm to 500 μm.
As a further improvement of the present invention, in the epitaxial structure, the N-type dopant source includes Si 2 H 6 、SiH 4 、Fe(C 2 H 5 ) 2 One or more of TMGa and TEGa, and the P-type doping source comprises BeMe 2 、DMZn、CBr 4 、Cp 2 Mg、(CH 3 ) 2 One or more of Mg.
As a further improvement of the invention, the quantum well active region is a multi-quantum well structure, and AlGaInAs materials with different components are adopted to grow the multi-quantum well structure, wherein the thickness of the quantum well is 5 nm-10 nm, and the thickness of the quantum barrier is 7 nm-12 nm.
As a further improvement of the present invention,
at the N-type Al x1 In 1-x1 In the As lower confinement layer, x1 is 0.3～0.6；
At the P-type Al x2 In 1-x2 In the As upper limiting layer, x2 is 0.3-0.6;
at the P-type Al y In 1-y In the As electron blocking layer, y is 0.3-0.6;
at the P-type Ga z1 In 1-z1 As z2 P 1-z2 In the functional layer, z1 is 0.1 to 0.3, and z2 is 0.2 to 0.4.
The invention also discloses a preparation method of the PCSEL composite chip based on the micro-lens relief grating, which comprises the following steps:
selecting an N-type InP substrate;
growing the PCSEL chip epitaxial structure by adopting a molecular beam epitaxial technology, a liquid phase epitaxial technology or a metal organic compound vapor phase epitaxy secondary epitaxial technology, and sequentially growing N-type Al on the surface of the N-type InP substrate from bottom to top x1 In 1-x1 As lower confinement layer, quantum well active region, P-type Al y In 1-y As electron blocking layer and P-type Ga z1 In 1-z1 As z2 P 1-z2 A functional layer;
adopting electron beam exposure technology to obtain the P-type Ga film z1 In 1-z1 As z2 P 1-z2 The function layer obtains a two-dimensional photonic crystal pattern, and then the two-dimensional photonic crystal pattern is etched by utilizing an inductive coupling plasma etching technology to obtain a two-dimensional photonic crystal;
on the surface of the two-dimensional photonic crystal, a molecular beam epitaxy technique, a liquid phase epitaxy technique or a metal organic compound vapor phase epitaxy secondary epitaxy technique is adopted to continuously grow P-type Al from bottom to top x2 In 1-x2 An As upper confinement layer and a P-type InP connection layer;
a photoresist mask and an ultraviolet exposure technology are adopted to obtain a micro lens pattern on the surface of the P-type InP connecting layer, and then a plasma enhanced chemical vapor deposition technology and a wet etching technology are adopted to manufacture micro lenses;
adopting an electron beam exposure technology to obtain a one-dimensional relief grating pattern on the surface of the micro lens, and etching the one-dimensional relief grating pattern by utilizing an inductive coupling plasma etching technology to obtain a one-dimensional relief grating; then, a photoresist mask and an ultraviolet exposure technology are adopted to obtain a P-type electrode window pattern on the surface of the P-type InP connecting layer, and then, a magnetron sputtering technology is adopted to sputter a P-type electrode on the surface of the P-type InP connecting layer;
thinning and polishing the back surface of the N-type InP substrate by using a chemical mechanical polishing machine;
sputtering an N-type electrode on the back surface of the N-type InP substrate by adopting a magnetron sputtering technology;
and carrying out cleavage, wire bonding and packaging on the PCSEL chip.
Compared with the prior art, the invention has the beneficial effects that:
according to the PCSEL chip, the one-dimensional relief grating is etched on the surface of the micro lens of the PCSEL chip, so that a composite structure of the PCSEL chip and the surface micro lens relief grating is formed, the problems of unstable polarization state of the PCSEL chip and high-order mode light beam emission are solved, the orthogonal polarization ratio is effectively improved, the light beam divergence angle is further reduced, and the PCSEL composite chip with low divergence angle and high light beam quality for stably outputting linearly polarized light beams is realized.
Drawings
FIG. 1 is a cross-sectional view of a PCSEL composite chip based on a microlens relief grating as disclosed herein;
FIG. 2 is a top view of the PCSEL composite chip of FIG. 1 having a square output aperture;
FIG. 3 is a top view of the PCSEL composite chip of FIG. 1 with a circular output aperture;
FIG. 4 is a schematic diagram of a periodic structure of the single-lattice two-dimensional photonic crystal of FIG. 1;
FIG. 5 is a schematic diagram of a periodic structure of the two-dimensional photonic crystal with double crystal lattice of FIG. 1;
FIG. 6 is a schematic diagram of a periodic structure of the three-lattice two-dimensional photonic crystal of FIG. 1;
fig. 7 is a flowchart of a method for manufacturing a PCSEL composite chip based on a microlens relief grating according to the present disclosure.
In the figure:
1. an N-type electrode; 2. an N-type InP substrate; 3. n-type Al x1 In 1-x1 An As lower confinement layer; 4A quantum well active region; 5. p-type Al y In 1-y An As electron blocking layer; 6. p-type Ga z1 In 1-z1 As z2 P 1-z2 A functional layer; 7. p-type Al x2 In 1-x2 An As upper confinement layer; 8. a P-type InP connection layer; 9. a P-type electrode; 10. a microlens; 11. a one-dimensional relief grating; 12. two-dimensional photonic crystals.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention is described in further detail below with reference to the attached drawing figures:
as shown in fig. 1, the present invention provides a PCSEL composite chip based on a microlens relief grating, comprising: top emission 1310nm PCSEL composite chip;
the epitaxial structure of the top-emission 1310nm PCSEL composite chip comprises an N-type electrode 1, an N-type InP substrate 2 and an N-type Al which are sequentially arranged from bottom to top x1 In 1-x1 As lower confinement layer 3, quantum well active region 4, P-type Al y In 1-y As electron blocking layer 5, P-type Ga z1 In 1-z1 As z2 P 1-z2 Functional layer 6, P-type Al x2 In 1-x2 The As upper limiting layer 7 and the P type InP connecting layer 8, wherein a micro lens 10 and a P type electrode 9 are arranged on the P type InP connecting layer 8, and the micro lens 10 is positioned at the center of the annular P type electrode 9, as shown in figures 2 and 3; the P-type GaInAsP functional layer 6 etches the two-dimensional photonic crystal 12, and a single-mode light beam is vertically emitted through Bragg diffraction conditions; the microlens 10 is etched with a one-dimensional relief grating 11 to regulate the polarization characteristics of the outgoing laser beam.
Specific:
as shown in fig. 4, 5 and 6, the two-dimensional photonic crystal 12 of the present invention includes one of a single-lattice two-dimensional photonic crystal, a double-lattice two-dimensional photonic crystal and a multi-lattice two-dimensional photonic crystal, and characteristic parameters of different lattice units are 300nm to 500nm. The single-lattice two-dimensional photonic crystal, the double-lattice two-dimensional photonic crystal and the multi-lattice two-dimensional photonic crystal are respectively composed of a single air hole, two air holes and a plurality of air holes with the same or different shapes. Taking the example of the two-dimensional photonic crystal with double crystal lattice shown in fig. 5, it is composed of two air holes with the same or different shapes, and a common double crystal lattice structure is composed of oval and circular shapes on the diagonal, for example.
The lattice unit of the two-dimensional photonic crystal 12 is composed of air holes with different shapes, including one or more of circles, triangles, diamonds, ovals, parallelograms, trapezoids, pentagons, hexagons and fans, the shape of the air holes can be formed by superposition and combination of various shapes, and the different lattice units are composed of air holes with different etching depths and different shapes, and the etching depth is 300-1100 nm.
As shown in fig. 2 and 3, the aperture shape of the one-dimensional relief grating 11 corresponding from top to bottom is one of square, round and polygonal, and the microlens relief grating formed by etching the one-dimensional relief grating 11 on the microlens 10 is adjacent to the P-type electrode 9. The grating structure is adjusted according to the shape of the exit aperture, so that expected output light spot patterns and polarization characteristics can be obtained simultaneously, and single polarization and polarization regulation output can be realized. Wherein the dimensional parameters of the one-dimensional relief grating 11 of the present invention are based on the bragg resonance condition λ=2n eff Calculating T; wherein lambda is the free space Bragg wavelength, n eff T is the grating period for the average effective index. The period of the one-dimensional relief grating 11 is 170 nm-210 nm, the duty ratio is 40% -60%, and the etching depth is 2-4 mu m.
In the epitaxial structure of the invention, the N-type doping source comprises Si 2 H 6 、SiH 4 、Fe(C 2 H 5 ) 2 One or more of TMGa and TEGa, and the P-type doping source comprises BeMe 2 、DMZn、CBr 4 、Cp 2 Mg、(CH 3 ) 2 One or more of Mg.
The quantum well active region 4 is of a multi-quantum well structure, and the multi-quantum well structure is grown by adopting AlGaInAs materials with different components, wherein the thickness of the quantum well is 5-10 nm, and the thickness of the quantum barrier is 7-12 nm.
The invention is characterized in that N-type Al x1 In 1-x1 In the As lower limiting layer 3, x1 is 0.3-0.6; in P type Al x2 In 1-x2 In the As upper limiting layer 7, x2 is 0.3-0.6; in P type Al y In 1-y In the As electron blocking layer 5, y is 0.3 to 0.6; in P type Ga z1 In 1-z1 As z2 P 1-z2 In the functional layer 6, z1 is 0.1 to 0.3, and z2 is 0.2 to 0.4, and different components affect refractive indexes of different materials, so that emission wavelength and output characteristics of light beams are affected.
As shown in fig. 1 and 7, the invention provides a preparation method of a PCSEL composite chip based on a micro-lens relief grating, which comprises the following steps:
step 1, selecting an N-type InP substrate 2;
step 2, growing a PCSEL chip epitaxial structure by adopting a Molecular Beam Epitaxy (MBE), a liquid phase epitaxy (liquid phase epitaxy) technology or a metal organic compound vapor phase epitaxy (MOCVD), namely: growing N-type Al on the surface of N-type InP substrate 2 from bottom to top x1 In 1-x1 As lower confinement layer 3, quantum well active region 4, P-type Al y In 1-y As electron blocking layer 5 and P-type Ga z1 In 1- z1 As z2 P 1-z2 A functional layer 6;
step 3, electron beam Exposure (EBL) is adopted to obtain P-type Ga z1 In 1-z1 As z2 P 1-z2 A two-dimensional photonic crystal pattern is obtained on the functional layer 6, and then the two-dimensional photonic crystal pattern is etched by utilizing an Inductively Coupled Plasma (ICP) etching technology to obtain a two-dimensional photonic crystal 12;
step 4, continuously growing P-type Al on the surface of the two-dimensional photonic crystal 12 from bottom to top by adopting a molecular beam epitaxy technology, a liquid phase epitaxy technology or a metal organic compound vapor phase epitaxy secondary epitaxy technology x2 In 1-x2 An As upper confinement layer 7 and a P-type InP connection layer 8;
and 5, obtaining a micro-lens pattern on the surface of the P-type InP connecting layer 8 by adopting a photoresist mask and ultraviolet exposure technology, and then manufacturing the micro-lens 10 by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) technology and a wet etching technology.
Step 6, adopting an electron beam exposure technology to obtain a one-dimensional relief grating pattern on the surface of the micro lens 10, and etching the one-dimensional relief grating pattern by utilizing an inductive coupling plasma etching technology to obtain a one-dimensional relief grating 11; then, a photoresist mask and an ultraviolet exposure technology are adopted to obtain a P-type electrode window pattern on the surface of the P-type InP connecting layer 8 and the outer side of the micro-lens relief grating, and then, a magnetron sputtering technology is adopted to sputter a P-type electrode 9 on the surface of the P-type InP connecting layer;
step 7, thinning and polishing the back surface of the N-type InP substrate 2 by using a chemical mechanical polishing machine;
step 8, sputtering an N-type electrode 1 on the back surface of the N-type InP substrate 2 by adopting a magnetron sputtering technology;
and 9, performing cleavage, wire bonding and packaging on the PCSEL chip.
Example 1:
a1310 nm single crystal lattice PCSEL composite chip based on micro lens relief grating and a preparation method thereof comprise
S11, selecting an N-type InP substrate 2, soaking the N-type InP substrate in deionized water for 5-10 minutes to remove impurities on the surface of the InP substrate, placing the substrate in a beaker filled with acetone, placing the beaker in an ultrasonic cleaner for ultrasonic treatment for 2 minutes, and washing out organic matters such as grease dissolved in the acetone. Then placing the substrate into a beaker containing ethanol, ultrasonically cleaning acetone on the surface, finally placing the substrate into deionized water for soaking for 2 minutes, removing residual alcohol on the surface, and drying the substrate by a nitrogen gun;
s12, growing a PCSEL chip epitaxial structure by adopting a metal organic compound vapor phase epitaxy secondary epitaxy technology, obtaining materials with different thicknesses and doping by controlling technological parameters such as reaction temperature, precursor flow, carrier gas flow, reaction pressure, deposition time and the like, and sequentially growing N-type Al on the surface of the N-type InP substrate 2 from bottom to top x1 In 1-x1 As lower confinement layer 3, quantum well active region 4, P-type Al y In 1-y As electron blockingLayer 5 and P-type Ga z1 In 1-z1 As z2 P 1-z2 A functional layer 6;
s13, adopting a plasma enhanced chemical vapor deposition technology to deposit SiO with the thickness of 100 nm-200 nm 2 As P-type Ga z1 In 1-z1 As z2 P 1-z2 And (3) spin coating zep glue with the thickness of 260-300 nm on the mask of the functional layer 6 by using a spin coater, wherein the rotating speed is 2500-3000 rpm. Adopting an electron beam exposure technology, obtaining a single-lattice two-dimensional photonic crystal pattern after exposure and development, and etching SiO by utilizing an inductive coupling plasma etching technology 2 And (5) masking to obtain the single-lattice two-dimensional photonic crystal pattern. Removing zep glue by using plasma 300 glue applying agent, wherein O 2 The flow rate is 0ml/min, N 2 The flow rate was 300ml/min and the power was 300W. And then, etching the P-type InP connecting layer 8 by using an inductive coupling plasma etching technology to obtain the single-lattice two-dimensional photonic crystal pattern. As shown in FIG. 4, the lattice unit of the single-lattice two-dimensional photonic crystal consists of isosceles right triangle air holes, the lattice constant is 380 nm-430 nm, the right-angle side of the isosceles right triangle is 360 nm-410 nm, and the etching depth is 400 nm-600 nm. Thereafter removing the deposited SiO by reactive ion etching 2 Masking;
s14, continuously growing P-type Al on the surface of the two-dimensional photonic crystal 12 from bottom to top by adopting a metal organic compound vapor phase epitaxy secondary epitaxy technology x2 In 1-x2 An As upper confinement layer 7 and a P-type InP connection layer 8;
s15, obtaining a micro-lens pattern on the surface of the P-type InP connecting layer 8 by adopting a photoresist mask and ultraviolet exposure technology, and then depositing SiO with the thickness of 2-4 mu m by adopting a plasma enhanced chemical vapor deposition technology 2 Then the microlens 10 is manufactured by wet etching technology, and the curvature radius is 100-250 mu m.
S16, similar to the experimental process for etching the two-dimensional photonic crystal 12, electron beam exposure and inductively coupled plasma etching are adopted, and zep glue is used as a mask to etch the micro lens, so that a one-dimensional relief grating pattern is obtained. Wherein the period of the one-dimensional relief grating 11 is 180 nm-200 nm, the duty ratio is 45% -55%, the etching depth is 2-4 μm, and the whole length is 300-400 μm. The exit aperture of the PCSEL composite chip is square, and the whole length of the one-dimensional relief grating 11 corresponds to the side length of the exit aperture of the PCSEL composite chip. And then a photoresist mask and an ultraviolet exposure technology are adopted to obtain a window pattern of the P-type electrode 9 on the surface of the P-type InP connecting layer 8.
S17, adopting a magnetron sputtering technology, firstly sputtering 50-100 nm of titanium on the surface of the P-type InP connecting layer 8, and then sputtering 450-550 nm of gold to jointly form the P-type electrode 9, wherein the titanium sputtered earlier can effectively prevent gold from falling off. Then placing the epitaxial wafer into acetone solution for soaking, removing photoresist on the surface of the chip, and stripping metal in a non-electrode area;
s18, thinning and polishing the back surface of the N-type InP substrate 2 by using a chemical mechanical polishing machine to remove surface defects and realize surface planarization and cleaning;
s19, sputtering 50-100 nm of gold and then 450-550 nm of germanium on the back surface of the N-type InP substrate 2 by adopting a magnetron sputtering technology to jointly form the N-type electrode 1.
S110, cutting the epitaxial wafer by using a dicing saw, separating out the chip, connecting the chip with the packaging pins by using gold wires in a wire bonding machine, positioning the chip, packaging, and finally performing functional test and reliability test on the packaged chip to ensure that the PCSEL chip can meet the requirements of normal operation.
Example 2:
a1310 nm double-lattice PCSEL composite chip based on micro-lens relief grating and a preparation method thereof comprise
S21, selecting an N-type InP substrate 2, soaking the N-type InP substrate in deionized water for 5-10 minutes to remove impurities on the surface, placing the substrate in a beaker filled with acetone, placing the beaker in an ultrasonic cleaner for ultrasonic treatment for 2 minutes, and washing out organic matters such as grease dissolved in the acetone. Then placing the substrate into a beaker containing ethanol, ultrasonically cleaning acetone on the surface, finally placing the substrate into deionized water for soaking for 2 minutes, removing residual alcohol on the surface, and drying the substrate by a nitrogen gun;
s22, adopting metal organic compound gas phase epitaxy IIGrowing PCSEL chip epitaxial structure by secondary epitaxial technology, obtaining materials with different thicknesses and doping by controlling technological parameters such as reaction temperature, precursor flow, carrier gas flow, reaction pressure, deposition time and the like, and sequentially growing N-type Al on the surface of the N-type InP substrate 2 from bottom to top x1 In 1-x1 As lower confinement layer 3, quantum well active region 4, P-type Al y In 1-y As electron blocking layer 5 and P-type Ga z1 In 1-z1 As z2 P 1-z2 A functional layer 6;
s23, adopting a plasma enhanced chemical vapor deposition technology to deposit SiO with the thickness of 100 nm-200 nm 2 As P-type Ga z1 In 1-z1 As z2 P 1-z2 And (3) spin coating zep glue with the thickness of 260-300 nm on the mask of the functional layer 6 by using a spin coater, wherein the rotating speed is 2500-3000 rpm. Adopting an electron beam exposure technology, obtaining a double-lattice two-dimensional photonic crystal pattern after exposure and development, and etching SiO by utilizing an inductive coupling plasma etching technology 2 And (5) masking to obtain the double-lattice two-dimensional photonic crystal pattern. Removing zep glue by using plasma 300 glue applying agent, wherein O 2 The flow rate is 0ml/min, N 2 The flow rate was 300ml/min and the power was 300W. And then, etching the P-type InP connecting layer 8 by using an inductive coupling plasma etching technology to obtain the double-lattice two-dimensional photonic crystal pattern. As shown in FIG. 5, the lattice unit of the double-lattice two-dimensional photonic crystal is composed of two diamond-shaped air holes with the size of 380 nm-430 nm, the side length of a large diamond is 90 nm-110 nm, the side length of a small diamond is 50 nm-70 nm, the etching depth is 400 nm-600 nm, and the etching depths of the two air holes can be the same or different. Thereafter removing the deposited SiO by reactive ion etching 2 Masking;
s24, continuously growing P-type Al on the surface of the two-dimensional photonic crystal 12 from bottom to top by adopting a metal organic compound vapor phase epitaxy secondary epitaxy technology x2 In 1-x2 An As upper confinement layer 7 and a P-type InP connection layer 8;
s25, obtaining a micro-lens pattern on the surface of the P-type InP connecting layer 8 by adopting a photoresist mask and ultraviolet exposure technology, and then depositing SiO with the thickness of 2-4 mu m by adopting a plasma enhanced chemical vapor deposition technology 2 And thenThe micro lens is manufactured by wet etching technology, and the curvature radius is 100-250 mu m.
S26, similar to the experimental process for etching the two-dimensional photonic crystal 12, electron beam exposure and inductively coupled plasma etching are adopted, and zep glue is used as a mask to etch the micro lens, so that a one-dimensional relief grating pattern is obtained. Wherein the period of the one-dimensional relief grating 11 is 180 nm-200 nm, the duty ratio is 45% -55%, the etching depth is 2-4 μm, and the whole length is 300-400 μm. The exit aperture of the PCSEL composite chip is square, and the whole length of the one-dimensional relief grating 11 corresponds to the side length of the exit aperture of the PCSEL composite chip. And then a photoresist mask and an ultraviolet exposure technology are adopted to obtain a window pattern of the P-type electrode 9 on the surface of the P-type InP connecting layer 8.
S27, adopting a magnetron sputtering technology to sputter 50-100 nm of titanium on the surface of the P-type InP connecting layer 8, and then sputter 450-550 nm of gold to jointly form the P-type electrode 9, wherein the sputtered titanium can effectively prevent gold from falling off. Then placing the epitaxial wafer into acetone solution for soaking, removing photoresist on the surface of the chip, and stripping metal in a non-electrode area;
s28, thinning and polishing the back surface of the N-type InP substrate 2 by using a chemical mechanical polishing machine to remove surface defects and realize surface planarization and cleaning;
s29, sputtering 50-100 nm of gold and then 450-550 nm of germanium on the back surface of the N-type InP substrate 2 by adopting a magnetron sputtering technology to jointly form the N-type electrode 1.
S210, cutting the epitaxial wafer by using a dicing saw, separating out the chip, connecting the chip with the packaging pins by using gold wires in a wire bonding machine, positioning the chip, packaging, and finally performing functional test and reliability test on the packaged chip to ensure that the PCSEL chip can meet the requirements of normal operation.
Example 3:
a1310 nm three-lattice PCSEL composite chip based on micro-lens relief grating and a preparation method thereof comprise
S31, selecting an N-type InP substrate 2, soaking the N-type InP substrate in deionized water for 5-10 minutes to remove impurities on the surface of the InP substrate, placing the substrate in a beaker filled with acetone, placing the beaker in an ultrasonic cleaner for ultrasonic treatment for 2 minutes, and washing out organic matters such as grease dissolved in the acetone. Then placing the substrate into a beaker containing ethanol, ultrasonically cleaning acetone on the surface, finally placing the substrate into deionized water for soaking for 2 minutes, removing residual alcohol on the surface, and drying the substrate by a nitrogen gun;
s32, growing a PCSEL chip epitaxial structure by adopting a metal organic compound vapor phase epitaxy secondary epitaxy technology, obtaining materials with different thicknesses and doping by controlling technological parameters such as reaction temperature, precursor flow, carrier gas flow, reaction pressure, deposition time and the like, and sequentially growing N-type Al on the surface of the N-type InP substrate 2 from bottom to top x1 In 1-x1 As lower confinement layer 3, quantum well active region 4, P-type Al y In 1-y As electron blocking layer 5 and P-type Ga z1 In 1-z1 As z2 P 1-z2 A functional layer 6;
s33, adopting a plasma enhanced chemical vapor deposition technology to deposit SiO with the thickness of 100 nm-200 nm 2 As P-type Ga z1 In 1-z1 As z2 P 1-z2 And (3) spin coating zep glue with the thickness of 260-300 nm on the mask of the functional layer 6 by using a spin coater, wherein the rotating speed is 2500-3000 rpm. Adopting an electron beam exposure technology, obtaining a three-lattice two-dimensional photonic crystal pattern after exposure and development, and etching SiO by utilizing an inductive coupling plasma etching technology 2 And the mask is used for obtaining the three-lattice two-dimensional photonic crystal graph. Removing zep glue by using plasma 300 glue applying agent, wherein O 2 The flow rate is 0ml/min, N 2 The flow rate was 300ml/min and the power was 300W. And then etching the P-type InP connecting layer 8 by using an inductive coupling plasma etching technology to obtain the three-lattice two-dimensional photonic crystal pattern. As shown in FIG. 6, the lattice unit of the three-lattice two-dimensional photonic crystal is composed of round air holes, the lattice constant is 380 nm-430 nm, the radius of the round is 60 nm-80 nm, the radius of the three circles can be the same or different, the etching depth is 400 nm-600 nm, and the etching depths of the two air holes can be the same or different. Thereafter removing the deposited SiO by reactive ion etching 2 Masking;
S34、on the surface of the two-dimensional photonic crystal 12, adopting a metal organic compound vapor phase epitaxy secondary epitaxy technology to continuously grow P-type Al from bottom to top x2 In 1-x2 An As upper confinement layer 7 and a P-type InP connection layer 8;
s35, obtaining a micro-lens pattern on the surface of the P-type InP connecting layer 8 by adopting a photoresist mask and ultraviolet exposure technology, and then depositing SiO with the thickness of 2-4 mu m by adopting a plasma enhanced chemical vapor deposition technology 2 Then the micro lens is manufactured by wet etching technology, and the curvature radius is 100-250 mu m.
S36, similar to the experimental process for etching the two-dimensional photonic crystal 12, electron beam exposure and inductively coupled plasma etching are adopted, and zep glue is used as a mask to etch the micro lens, so that a one-dimensional relief grating pattern is obtained. Wherein the period of the one-dimensional relief grating 11 is 180 nm-200 nm, the duty ratio is 45% -55%, the etching depth is 2-4 μm, and the whole length is 300-400 μm. The exit aperture of the PCSEL composite chip is circular, and the overall length of the one-dimensional relief grating 11 corresponds to the diameter of the PCSEL composite chip exit aperture. And then a photoresist mask and an ultraviolet exposure technology are adopted to obtain a window pattern of the P-type electrode 9 on the surface of the P-type InP connecting layer 8.
S37, adopting a magnetron sputtering technology, sputtering 50-100 nm of titanium on the surface of the P-type InP connecting layer 8, and then sputtering 450-550 nm of gold to jointly form the P-type electrode 9, wherein the sputtered titanium can effectively prevent gold from falling off. Then placing the epitaxial wafer into acetone solution for soaking, removing photoresist on the surface of the chip, and stripping metal in a non-electrode area;
s38, thinning and polishing the back surface of the N-type InP substrate 2 by using a chemical mechanical polishing machine to remove surface defects and realize surface planarization and cleaning;
s39, sputtering 50-100 nm of gold and 450-550 nm of germanium on the back surface of the N-type InP substrate 2 by adopting a magnetron sputtering technology to jointly form the N-type electrode 1.
S310, cutting the epitaxial wafer by using a dicing saw, separating out the chip, connecting the chip with the packaging pins by using gold wires in the wire bonding machine, positioning the chip, packaging, and finally performing functional test and reliability test on the packaged chip to ensure that the PCSEL chip can meet the requirements of normal operation.
The invention has the advantages that:
according to the PCSEL chip, the one-dimensional relief grating is etched on the surface of the micro lens of the PCSEL chip, so that a composite structure of the PCSEL chip and the surface micro lens relief grating is formed, the problems of unstable polarization state of the PCSEL chip and high-order mode light beam emission are solved, the orthogonal polarization ratio is effectively improved, the light beam divergence angle is further reduced, and the PCSEL composite chip with low divergence angle and high light beam quality for stably outputting linearly polarized light beams is realized.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A PCSEL composite chip based on a micro-lens relief grating is characterized in that,
the epitaxial structure of the PCSEL composite chip comprises an N-type electrode, an N-type InP substrate and an N-type Al which are sequentially arranged from bottom to top x1 In 1-x1 As lower confinement layer, quantum well active region, P-type Al y In 1-y As electron blocking layer, P-type Ga z1 In 1-z1 As z2 P 1-z2 Functional layer, P-type Al x2 In 1-x2 The device comprises an As upper limiting layer and a P-type InP connecting layer, wherein a micro lens and a P-type electrode are arranged on the upper surface of the P-type InP connecting layer; etching a two-dimensional photonic crystal on the P-type GaInAsP functional layer, and vertically emitting a single-mode light beam under the Bragg diffraction condition; and etching a one-dimensional relief grating on the micro lens to regulate and control the polarization characteristic of the emergent laser beam.
2. The PCSEL composite chip based on the microlens relief grating according to claim 1, wherein the two-dimensional photonic crystal comprises one of a single-lattice two-dimensional photonic crystal, a double-lattice two-dimensional photonic crystal and a multi-lattice two-dimensional photonic crystal, and the characteristic parameters of different lattice units are 300nm to 500nm.
3. The PCSEL composite chip based on the microlens relief grating according to claim 1 or 2, wherein lattice units of the two-dimensional photonic crystal are composed of air holes of different shapes, including one or more of circles, triangles, diamonds, ovals, parallelograms, trapezoids, pentagons, hexagons, and sectors, and different lattice units are composed of air holes of different etching depths and different shapes, and the etching depths are 300nm to 1100nm.
4. The PCSEL composite chip based on the microlens relief grating according to claim 1, wherein the one-dimensional relief grating has one of a square, a circle and a polygon in an aperture shape corresponding from top to bottom, and the microlens relief grating is adjacent to the P-type electrode.
5. The PCSEL composite chip based on a microlens relief grating as set forth in claim 1 or 4, wherein the dimensional parameter of the one-dimensional relief grating is based on the bragg resonance condition λ=2n eff Calculating T; wherein lambda is the free space Bragg wavelength, n eff The average effective refractive index is obtained, and T is the grating period; the period of the obtained one-dimensional relief grating is 170 nm-210 nm, the duty ratio is 40% -60%, and the etching depth is 2 mu m-4 mu m.
6. The PCSEL composite chip based on a microlens relief grating as set forth in claim 1 or 4, wherein the thickness of the microlens is 2 μm to 4 μm, the overall length is 300 μm to 400 μm, and the radius of curvature is 50 μm to 500 μm.
7. The PCSEL composite chip based on a microlens relief grating of claim 1, wherein in the epitaxial structure, the N-type dopant source comprises Si 2 H 6 、SiH 4 、Fe(C 2 H 5 ) 2 One or more of TMGa and TEGa, and the P-type doping source comprises BeMe 2 、DMZn、CBr 4 、Cp 2 Mg、(CH 3 ) 2 One or more of Mg.
8. The PCSEL composite chip based on the microlens relief grating according to claim 1, wherein the quantum well active region is a multi-quantum well structure grown by using AlGaInAs materials of different compositions, wherein the quantum well has a thickness of 5nm to 10nm and the quantum barrier has a thickness of 7nm to 12nm.
9. The PCSEL composite chip based on a microlens relief grating as set forth in claim 1, wherein,
at the N-type Al x1 In 1-x1 In the As lower limiting layer, x1 is 0.3-0.6;
at the P-type Al x2 In 1-x2 In the As upper limiting layer, x2 is 0.3-0.6;
at the P-type Al y In 1-y In the As electron blocking layer, y is 0.3-0.6;
at the P-type Ga z1 In 1-z1 As z2 P 1-z2 In the functional layer, z1 is 0.1 to 0.3, and z2 is 0.2 to 0.4.
10. A method of manufacturing a PCSEL composite chip based on a microlens relief grating as claimed in any one of claims 1 to 9, comprising:
selecting an N-type InP substrate;
growing the PCSEL chip epitaxial structure by adopting a molecular beam epitaxial technology, a liquid phase epitaxial technology or a metal organic compound vapor phase epitaxy secondary epitaxial technology, and sequentially growing N-type Al on the surface of the N-type InP substrate from bottom to top x1 In 1-x1 As lower confinement layer, quantum well active region, P-type Al y In 1-y As electron blocking layer and P-type Ga z1 In 1-z1 As z2 P 1-z2 A functional layer;
using electron beam exposure techniques, inThe P type Ga z1 In 1-z1 As z2 P 1-z2 The function layer obtains a two-dimensional photonic crystal pattern, and then the two-dimensional photonic crystal pattern is etched by utilizing an inductive coupling plasma etching technology to obtain a two-dimensional photonic crystal;
on the surface of the two-dimensional photonic crystal, a molecular beam epitaxy technique, a liquid phase epitaxy technique or a metal organic compound vapor phase epitaxy secondary epitaxy technique is adopted to continuously grow P-type Al from bottom to top x2 In 1-x2 An As upper confinement layer and a P-type InP connection layer;
a photoresist mask and an ultraviolet exposure technology are adopted to obtain a micro lens pattern on the surface of the P-type InP connecting layer, and then a plasma enhanced chemical vapor deposition technology and a wet etching technology are adopted to manufacture micro lenses;
adopting an electron beam exposure technology to obtain a one-dimensional relief grating pattern on the surface of the micro lens, and etching the one-dimensional relief grating pattern by utilizing an inductive coupling plasma etching technology to obtain a one-dimensional relief grating; then, a photoresist mask and an ultraviolet exposure technology are adopted to obtain a P-type electrode window pattern on the surface of the P-type InP connecting layer, and then, a magnetron sputtering technology is adopted to sputter a P-type electrode on the surface of the P-type InP connecting layer;
thinning and polishing the back surface of the N-type InP substrate by using a chemical mechanical polishing machine;
sputtering an N-type electrode on the back surface of the N-type InP substrate by adopting a magnetron sputtering technology;
and carrying out cleavage, wire bonding and packaging on the PCSEL chip.
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