CN117647948A - Control circuit, gas treatment device and control method - Google Patents

Control circuit, gas treatment device and control method Download PDF

Info

Publication number
CN117647948A
CN117647948A CN202410116736.9A CN202410116736A CN117647948A CN 117647948 A CN117647948 A CN 117647948A CN 202410116736 A CN202410116736 A CN 202410116736A CN 117647948 A CN117647948 A CN 117647948A
Authority
CN
China
Prior art keywords
liquid level
pulse
circuit
igbt element
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202410116736.9A
Other languages
Chinese (zh)
Other versions
CN117647948B (en
Inventor
翁林钢
苑举林
罗安飞
戚科技
周方智
徐成钢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Doway Advanced Technology Co ltd
Original Assignee
Zhejiang Doway Advanced Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Doway Advanced Technology Co ltd filed Critical Zhejiang Doway Advanced Technology Co ltd
Priority to CN202410116736.9A priority Critical patent/CN117647948B/en
Publication of CN117647948A publication Critical patent/CN117647948A/en
Application granted granted Critical
Publication of CN117647948B publication Critical patent/CN117647948B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

The application relates to the technical field of gas treatment, solves the problems of easy saturation and failure, high maintenance difficulty and high maintenance cost of materials existing in the prior art when inspection well waste gas is treated by oxidizing or adsorbing materials, and discloses a control circuit, a gas treatment device and a control method. The control circuit comprises a control chip, a switching circuit, a Buck circuit, a second IGBT element, an RCD absorption loop, a first pulse transformer and a pulse plasma reactor, wherein the circuit has small volume, high voltage regulation precision and small ripple coefficient, and is convenient for the post-stage high-precision control; the high-power pulse generating circuit adopts a laminated busbar structure, so that the line inductance is greatly reduced, the pulse width is reduced, the gas is not easy to break down, and the stability and the working condition adaptability of gas treatment are improved.

Description

Control circuit, gas treatment device and control method
Technical Field
The present disclosure relates to the field of gas processing technologies, and in particular, to a control circuit, a gas processing apparatus, and a gas processing method.
Background
The urban living drainage system mainly comprises units such as septic tanks, conveying pipelines, various inspection wells, pump stations, sewage treatment plants and the like, is an infrastructure of the city, and provides important support for the normal operation of the city. The inspection well is commonly called as an inspection well, is a junction of urban pipe network connection, and is convenient for regular inspection, cleaning and dredging. With the continuous development of society, the requirements of people on living environments are also increasing. The existing municipal inspection well, in particular the sewage inspection well, has a large amount of high-activity microorganisms, the microorganisms in the sewage are continuously subjected to physical, chemical and biological processes such as proliferation, adaptation, selection and the like, and microbial communities with strong activity are continuously induced in the original sewage, so that organic matters in the sewage are continuously degraded. The continuous degradation process of organic matters in sewage is also the continuous generation process of waste gas in urban drainage system, and the aerobic or anaerobic biodegradation of organic pollutants can generate greenhouse gas CO 2 Under anaerobic condition, organic matters in the sewage are decomposed under the action of methyl burn bacteria to produce methyl burn, and domestic sewage containing protein is decomposed by sulfate reducing bacteria to produce toxic gas H 2 S, bacteria decompose amino acid in sewage organic matters to generate NH 3 At the same time, volatile organic gases such as hydrocarbon, oxygenated hydrocarbon, etc. are also generated during the decomposition of organic substances.
Malodorous gas overflows from the top of the manhole in large quantities. The environmental pollution is caused to the nearby air, and the living of nearby residents is seriously influenced. The problem of environmental pollution caused by overflow of waste gas from inspection wells is not well solved. The inspection well, particularly the sewage inspection well, needs to have an exhaust function so as to avoid danger caused by accumulation of a large amount of malodorous gas in the inspection well, so that the inspection well cannot be sealed completely.
The production and discharge of malodorous waste gas has timeliness, is reflected in water peak time and low peak time in one day, and is also reflected in the difference between working days and non-working days in one week: in the water consumption peak period, the output and discharge capacity of various malodorous waste gases are obviously higher than those in the water consumption low peak period; the rainfall has a larger influence on the production and drainage of characteristic waste gas in the combined drainage system, and has no influence on the split drainage system; the sewage turbulence degree in the drop well of the drainage system is higher, so that the diffusion of waste gas from liquid phase to gas phase is facilitated, and the output and discharge amount of the waste gas in the drainage system are increased.
Most of the inspection wells are arranged in parks or on the sides of the roads. The conventional deodorizing equipment has large volume and large occupied area, and is not in good charge with the surrounding environment. The exhaust gases are substantially in a no-treatment condition. Some people treat the exhaust gas with an oxidizing material or an adsorbent material. However, these materials tend to adsorb saturated and fail. Frequent replacement times, large accumulated cost and large labor cost, and secondary pollution possibly exists in the treatment of the absorbed waste gas, and a special company needs to be entrusted for treatment, so that the cost is huge. It is often not found for adsorption saturated or dead materials at the first time, so resident complaints are not reduced.
Disclosure of Invention
Based on the problems, in the prior art, that materials are easy to saturate and lose efficacy, the maintenance difficulty is high and the maintenance cost is high when the inspection well waste gas is treated by oxidizing or adsorbing materials are solved, the control circuit, the gas treatment device and the control method are provided.
In a first aspect, there is provided a control circuit comprising: a control chip, a switching circuit, a Buck circuit, a second IGBT element, an RCD absorption loop, a first pulse transformer and a pulse plasma reactor;
the switching circuit is connected with a power supply on one side, and connected with a full-bridge rectifier on the other side;
the Buck circuit comprises a second capacitor and a first IGBT element for adjusting the voltage at two ends of the second capacitor, wherein a collector of the first IGBT element is electrically connected with a first output end of the full-bridge rectifier, an emitter of the first IGBT element is electrically connected with a cathode of a first diode, and the first diode, the second inductor and the second capacitor form a series circuit;
a second IGBT element connected in parallel with the second capacitor, and a third inductance is connected in series between a collector of the second IGBT element and the second capacitor;
an RCD absorption loop connected in parallel to both ends of the emitter and collector of the second IGBT element;
the low-voltage package of the first pulse transformer is connected with two ends of the RCD absorption loop, the high-voltage package of the first pulse transformer is connected with the pulse plasma reactor, and the second IGBT element and the first resonance capacitor are connected in series with the low-voltage package of the first pulse transformer;
the switch circuit, the grid electrode of the first IGBT element and the grid electrode of the second IGBT element are electrically connected with the control chip.
Further, the working mode of the first IGBT element is a fixed bandwidth, and the working frequency of the first IGBT element is not lower than 100MHz.
Further, the switch circuit comprises a plurality of contactors electrically connected with the control chip, and the contactors are used for controlling the on-off of a circuit between the power supply and the full-bridge rectifier, wherein the contactors are electrically connected with the control chip.
Further, the RCD absorption loop includes an absorption resistor, an absorption diode, and an absorption capacitor, where the absorption resistor and the absorption diode are connected in parallel and then connected in series with the absorption capacitor.
Further, the low-voltage package of the first pulse transformer is wound by litz wires, the high-voltage package of the first pulse transformer is wound by multi-layer insulation high-voltage litz wires, the high-voltage package and the low-voltage package of the first pulse transformer are supported by a framework, and a safe insulation gap is reserved between the high-voltage package and the low-voltage package of the first pulse transformer.
Optionally, the full-bridge rectifier further comprises a filter circuit, wherein the filter circuit comprises a first inductor and a first capacitor, and the first inductor and the first capacitor form a closed loop with a first output end and a second output end of the full-bridge rectifier.
In a second aspect, there is provided a gas processing apparatus comprising: the device comprises an air inlet pipe, a filtering device, a reaction device, an adsorption purification device and a liquid level sensing device;
one end of the air inlet pipe is connected with the reaction device, the other end of the air inlet pipe extends into the airtight inspection well and keeps a certain distance with the liquid level in the inspection well, a filtering device is further connected between the air inlet pipe and the reaction device, the air inlet pipe, the filtering device, the reaction device and the adsorption purification device are sequentially communicated, the pulse plasma reactor is used for forming a pulse plasma reaction area inside the reaction device, the liquid level sensing device is used for detecting the liquid level height in the inspection well, and the pulse plasma reactor is powered by the control circuit in any one of the implementation modes according to the first aspect.
Further, the free end of the air inlet pipe comprises a flexible structure which deforms under the stress action of the liquid level sensing device.
Optionally, the pulsed plasma reactor is powered by a solar power supply system, wherein the solar power supply system is configured to output an adjustable voltage in the form of pulses.
In a third aspect, there is provided a control method for controlling a gas processing apparatus as described in any one of the implementations of the second aspect, the control method comprising:
acquiring liquid level height data in the inspection well detected by a liquid level sensing device;
calculating the liquid level variation in a certain time according to the liquid level height data, and regulating and controlling the pulse plasma reactor according to the liquid level variation;
if the liquid level variation is smaller than the preset threshold value, the pulse plasma reactor is not required to be controlled to work;
if the liquid level variation is larger than the preset threshold, the pulse plasma reactor is controlled to work, and the power of the pulse plasma reactor is increased along with the increase of the liquid level variation.
The application has the following beneficial effects:
1. the Buck circuit is adopted for voltage regulation, so that the circuit is small in size, high in voltage regulation precision and small in ripple coefficient, and the rear-stage high-precision control is facilitated; the high-power pulse generating circuit adopts a laminated busbar structure, so that the inductance of a circuit is greatly reduced, and the pulse width is reduced; the first pulse transformer is wound by adopting a special process, and the high-voltage package and the low-voltage package are perfectly matched, so that the output reliability is ensured, the leakage inductance of the low-voltage package is effectively reduced, the pulse width is further reduced, the gas is not easy to break down, the stability and the working condition adaptability of gas treatment are improved, in addition, a pulse power supply is matched with the grounding electrode of the internal discharge electrode of the pulse plasma deodorization technology integrated equipment, and the problem that the odor is easy to discharge due to high water content can be solved;
2. in the method, the waste gas is filtered by a front-end filtering device to remove impurities such as winged insects, dust, water mist and the like in the gas, and then enters a reaction device, and malodorous gas molecules, oxygen and water are bombarded by high-energy particles in a pulse plasma reaction zone to ionize the molecules into ionic states and recombine into harmless substances so as to achieve the deodorizing purpose; finally, absorbing or filtering by an adsorption purification device, capturing a small amount of residual odor fog drops and odor, preventing odor molecules from escaping after the odor fog drops are gasified, and thus, efficiently carrying out automatic treatment on the odor in the inspection well;
3. through setting up flexible construction for the lower extreme of intake pipe can remain preset distance with the liquid level in the inspection shaft all the time, on the one hand, can effectually prevent that the liquid level in the inspection shaft risees and the liquid gets into the intake pipe that the intake pipe leads to and block up, on the other hand, when the liquid level in the inspection shaft descends, intake pipe lower port can descend along with the liquid level is synchronous for the ozone that ionized air produced in the reaction unit can be discharged to the space that is close to the liquid level in, thereby can make the foul smell that the liquid level was blown out can contact with ozone and take place the reaction very first time, and then can effectually improve the effect and the efficiency of deodorization in the inspection shaft;
4. by arranging the adsorption purification device, when odor components fluctuate, odor components possibly remained in a fluctuation peak reaction zone can be adsorbed and solidified by the adsorption purification device; on the contrary, when the fluctuation low-grain oxidizing components cannot fully participate in the reaction, the condition that the oxidizing components overflow into the adsorption purification device can occur, the overflowed oxidizing components can react with solidified odor components, and the regeneration of the adsorption purification device is realized while the deodorization reaction is carried out, so that the adsorption purification device maintains the long-term effective characteristic.
It should be understood that the description of this section is not intended to identify key or critical features of the embodiments of the application or to delineate the scope of the application. Other features of the present application will become apparent from the description that follows.
Drawings
The drawings are for better understanding of the present solution and do not constitute a limitation of the present application. Wherein:
fig. 1 is a control circuit diagram according to embodiment 1 of the present application;
fig. 2 is a schematic structural view of a gas treatment apparatus according to embodiments 2 and 3 of the present application;
FIG. 3 is an installation schematic of a gas treatment device according to embodiments 2 and 3 of the present application;
FIG. 4 is a circuit diagram of a solar power supply system of a gas treatment apparatus according to embodiment 3 of the present application;
FIG. 5 is a flowchart of a control method according to embodiment 4 of the present application;
fig. 6 is a schematic diagram of the internal structure of the electronic device according to embodiment 6 of the present application.
Reference numerals:
1. a power supply; 2. a switching circuit; 3. a full bridge rectifier; 4. a first inductance; 5. a first capacitor; 6. a first IGBT element; 7. a second inductor; 8. a first diode; 9. a second capacitor; 10. a third inductance; 11. a second IGBT element; 12. an absorption resistor; 13. an absorption diode; 14. an absorption capacitance; 15. a first resonant capacitor; 16. a first pulse transformer; 17. a pulsed plasma reactor; 18. a control chip; 19. an air inlet pipe; 20. a filtering device; 21. a reaction device; 22. an adsorption purification device; 23. a liquid level sensing device; 24. a flexible structure; 25. an air outlet pipe; 26. a solar power supply system; 27. a photovoltaic panel; 28. a filter capacitor; 29. a fourth inductance; 30. a first switching tube; 31. a second diode; 32. an output capacitance; 33. a fifth inductance; 34. a battery pack; 35. a second switching tube; 36. a third diode; 37. a sixth inductance; 38. a third switching tube; 39. a fourth diode; 40. a bus capacitor; 41. a seventh inductance; 42. a fourth switching tube; 43. a second resonance capacitor; 44. a second pulse transformer.
Detailed Description
Exemplary embodiments of the present application are described below in conjunction with the accompanying drawings, which include various details of the embodiments of the present application to facilitate understanding, and should be considered as merely exemplary. Accordingly, one of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the present application. Also, descriptions of well-known functions and constructions are omitted in the following description for clarity and conciseness.
Example 1
As shown in fig. 1, a control circuit according to embodiment 1 of the present application includes: a control chip 18, a switching circuit 2, a Buck circuit, a second IGBT element 11, an RCD absorption loop, a first pulse transformer 16, and a pulse plasma reactor 17;
the switching circuit 2, the power 1 is connected to one side of switching circuit 2, full bridge rectifier 3 is connected to the opposite side of switching circuit 2, and wherein, power 1 adopts AC220V power supply, and AC220V alternating current changes into direct current after full bridge rectifier 3.
Specifically, the switch circuit 2 includes a plurality of contactors electrically connected to the control chip 18, and the contactors are used to control the on/off of the circuit between the power supply 1 and the full-bridge rectifier 3, where the contactors are all electrically connected to the control chip 18.
In order to obtain stable direct-current voltage, a filter circuit is arranged at the output end of the full-bridge rectifier 3, wherein the filter circuit comprises a first inductor 4 and a first capacitor 5, and the first inductor 4 and the first capacitor 5 form a closed loop with the first output end and the second output end of the full-bridge rectifier 3.
The Buck circuit comprises a second capacitor 9 and a first IGBT element 6 for adjusting the voltage at two ends of the second capacitor 9, wherein a collector of the first IGBT element 6 is electrically connected with a first output end of the full-bridge rectifier 3, an emitter of the first IGBT element 6 is electrically connected with a cathode of a diode I8, and the diode I8, a second inductor 7 and the second capacitor 9 form a series loop;
note that, the operation mode of first IGBT element 6 is a fixed bandwidth, the operation frequency of first IGBT element 6 is not lower than 100MHz, in a preferred embodiment, the operation frequency of first IGBT element 6 may be 150MHz, and first IGBT element 6 is used to adjust the voltage values at both ends of second capacitor 9; after voltage regulation by the Buck circuit, the voltage value obtained across the second capacitor 9 is defined as the primary voltage in this embodiment.
A second IGBT element 11, the second IGBT element 11 is connected in parallel with the second capacitor 9, a third inductor 10 is connected in series between a collector of the second IGBT element 11 and the second capacitor 9, the third inductor 10 functions as a switching device, the second IGBT element 11 is a main switching device, and an operating frequency and an on time of the second IGBT element 11 are determined by signals given by a control chip 18;
the RCD absorption loop is connected in parallel to two ends of the emitter and collector of the second IGBT element 11, specifically, the RCD absorption loop includes an absorption resistor 12, an absorption diode 13, and an absorption capacitor 14, where the absorption resistor 12 and the absorption diode 13 are connected in parallel and then connected in series with the absorption capacitor 14, and the RCD absorption loop is used to absorb an overvoltage in the circuit, so as to achieve the purpose of protecting the second IGBT element 11;
the low-voltage package of the first pulse transformer 16 is connected to both ends of the RCD absorption loop, the high-voltage package of the first pulse transformer 16 is connected to the pulse plasma reactor 17, and the second IGBT element 11 and the first resonance capacitor 15 are connected in series with the low-voltage package of the first pulse transformer 16;
the first pulse transformer 16 includes a low-voltage package connected to the second IGBT element 11 and a high-voltage package connected to the pulse plasma reactor 17, when the second IGBT element 11 is turned on, an LC oscillation loop is formed, the low-voltage package of the first pulse transformer 16 is wound with litz wire, the high-voltage package of the first pulse transformer 16 is wound with multi-layer insulating high-voltage litz wire, the high-voltage package and the low-voltage package of the first pulse transformer 16 are both supported by a framework, and a safe insulation gap is reserved between the high-voltage package and the low-voltage package of the first pulse transformer 16, that is, in order to ensure that breakdown does not occur between the high-voltage package and the low-voltage package of the first pulse transformer 16, a suitable safe insulation distance needs to be reserved between the high-voltage package and the low-voltage package of the first pulse transformer 16, and an insulation material may be disposed between the high-voltage package and the low-voltage package of the first pulse transformer 16 to ensure insulation strength.
The switch circuit 2, the gate of the first IGBT element 6 and the gate of the second IGBT element 11 are electrically connected to the control chip 18, where the on/off of the switch circuit 2, and the first IGBT element 6 and the second IGBT element 11 are controlled by the control chip 18, and the control chip 18 uses the DSP chip F28335 as a control core unit, and other peripheral circuits in this embodiment include an IGBT driving circuit, a DI/DO digital input/output module, an analog sampling circuit, a communication circuit, and the like. The clock frequency of the DSP chip is up to 150MHz, the data acquisition and processing speed is extremely high, and an embedded control program which is independently developed is built in the DSP chip, so that customized high-precision control can be achieved, and the requirement of the embodiment on the control chip 18 can be met.
It should be noted that, in this embodiment, the power of the output power supply 1 is generally 200W, the output voltage is between 5 and 10V and is adjustable, and the output is performed in the form of pulses, the frequency is between 0 and 5000Hz and is adjustable, the pulse width is less than 1us, and the rising edge is less than 300ns. According to the gas breakdown theory, the narrower the pulse width of the applied voltage is, the higher the breakdown voltage is, that is, the higher the voltage which can be borne by the gas is, the narrower the pulse width is, the gas breakdown phenomenon is not easy to occur, that is, the better the equipment operation stability and the working condition adaptability are. With a smaller rise time, a narrower pulse width is possible.
In the embodiment, a Buck circuit is adopted for voltage regulation, so that the circuit is small in size, high in voltage regulation precision and small in ripple coefficient, and the rear-stage high-precision control is facilitated; the high-power pulse generating circuit and the laminated busbar structure are adopted, so that the inductance of a circuit is greatly reduced, and the pulse width is reduced; the first pulse transformer 16 is wound by a special process, and the high-voltage and low-voltage packages are perfectly matched, so that the output reliability is ensured, the leakage inductance of the low-voltage packages is effectively reduced, and the pulse width is further reduced.
Example 2
As shown in fig. 2, a gas processing apparatus according to embodiment 2 of the present application includes: an air inlet pipe 19, a filtering device 20, a reaction device 21, an adsorption purification device 22 and a liquid level sensing device 23;
one end of the air inlet pipe 19 is connected with the reaction device 21, the other end of the air inlet pipe 19 extends into the closed inspection well and keeps a certain distance from the liquid level in the inspection well, a filter device 20 is further connected between the air inlet pipe 19 and the reaction device 21, the interiors of the air inlet pipe 19, the filter device 20, the reaction device 21 and the adsorption purification device 22 are sequentially communicated, the pulse plasma reactor 17 is used for forming a pulse plasma reaction zone in the reaction device 21, and the liquid level sensing device 23 is used for detecting the liquid level in the inspection well, wherein the pulse plasma reactor 17 is powered by a control circuit as described in any one of the embodiments of the embodiment 1.
As shown in fig. 3, the gas treatment device is generally arranged beside a manhole cover, the manhole is only subjected to gas inlet or gas exhaust through an air inlet pipe 19, when the liquid level in the manhole rises, the pressure in the manhole is increased, waste gas enters the device from the air inlet pipe 19, sequentially enters a front end filtering device 20, a reaction device 21 and an adsorption purification device 22 through the air inlet pipe 19, finally is discharged at high altitude, specifically, the waste gas removes impurities such as small flying insects, dust, water mist and the like in the gas through the filtering device 20, then enters a pulse plasma reaction zone of the reaction device 21, and malodorous gas molecules, oxygen and water are bombarded by high-energy particles in the pulse plasma reaction zone, so that the molecules are ionized into an ionic state and recombined into harmless substances, thereby achieving the deodorizing purpose; finally, absorbing or filtering by the adsorption purification device 22, capturing a small amount of residual odor fog drops and odor, and preventing odor molecules from escaping after the odor fog drops are gasified, wherein the pulse plasma reactor 17 is arranged in the reaction device 21, when the liquid level in the inspection well is reduced, the pressure in the inspection well is reduced, external air enters the reaction device 21 through the adsorption purification device 22, the air is ionized by the pulse plasma reactor 17 to generate ozone, and the ozone enters the inspection well through the filtering device 20 and the air inlet pipe 19, so that ozone can be utilized to kill and deodorize in the inspection well.
For example, the adsorption purification device 22 may be a honeycomb ceramic material or an activated carbon adsorption material, and the honeycomb ceramic material is taken as an example for illustration, and the adsorption purification device 22 for capturing the odor fog drops and the odor components in the gas is further connected to the end of the reaction device 21 away from the filtering device 20, so that when the odor components fluctuate, the odor components possibly remained in the fluctuation peak reaction area can be adsorbed and solidified by the honeycomb ceramic; on the contrary, when the fluctuation low-grain oxidizing components cannot fully participate in the reaction, the situation that the oxidizing components overflow into the adsorption purification device 22 occurs, the overflowed oxidizing components react with solidified odor components, the regeneration of the honeycomb ceramics is realized while the deodorization reaction is carried out, so that the honeycomb ceramics maintain long-term effective characteristics, and meanwhile, the honeycomb ceramics have good filtering effect, can solidify odor fog drops, and the odor components of the odor fog drops can be reacted to realize deodorization.
In order to prevent sewage in the manhole from being sucked into the reaction device 21, it is necessary to keep the end of the intake pipe 19 extending into the manhole at a certain safety distance from the liquid surface in the manhole all the time, so that the free end of the intake pipe 19 includes a flexible structure 24 that deforms under the stress of the liquid level sensing device 23, wherein the flexible structure 24 is a structure having significant deformation capability, and changes in shape and size after being stressed, for example: the threaded telescopic hose, the telescopic hose, the corrugated pipe, the spring pipe and the like are arranged at one end of the air inlet pipe 19 extending into the inspection well, the threaded telescopic hose is taken as an example for illustration below, the liquid level sensing device 23 adopts a floating ball type, the upper end of the threaded telescopic hose is communicated with the air inlet pipe 19, the lower end of the threaded telescopic hose is connected with the floating ball of the liquid level sensing device 23 through a rigid connecting piece, when the liquid level rises, the lower end of the threaded telescopic hose can synchronously rise along with the liquid level, when the liquid level falls, the lower end of the threaded telescopic hose can synchronously fall along with the liquid level, so that waste water caused by that the suction end of the air inlet pipe 19 is immersed into the liquid due to the rise of the liquid level can be effectively prevented from being sucked into the reaction device 21, buoyancy is taken as power, extra power sources are not needed, energy is saved, the device can be automatically regulated and controlled, damage caused by a large amount of water inlet is prevented, the suction end can always keep a preset proper distance with the liquid level, odor can be effectively collected, and the odor is prevented from being expanded into the air.
In addition, considering that the inspection shaft is usually located at the roadside of the park and is disposed following the arrangement of the sewer line due to the particularities of its geographical location, it is not necessary to have a self-produced power supply apparatus for the pin because it is possible to draw the wire at any place, and a solar power supply apparatus including the pulse power source 1, the inverter, the solar panel and the storage battery is included. When the solar panel is illuminated, the charge distribution state in the object changes to generate electromotive force and current. The solar panel converts the generated direct current into alternating current through an inverter to supply the pulse power source 1 for use. The working state of the solar cell panel under different light conditions can be different. Under the condition of sufficient sunlight, the solar cell panel can generate enough electric energy to meet the requirement of a load, and under the condition of insufficient light such as overcast or rainy days, the electric energy generated by the solar cell panel can be relatively less, so that the normal operation of the equipment is ensured by storing energy through the storage battery.
It is important to note that the gas treatment device is aesthetically pleasing and unobtrusive. Therefore, the air inlet pipe 19 is all in an underground form, the air outlet pipe 25 led out from the adsorption purification device 22 is a stainless steel pipe with the length of about 20 meters, a solar panel is arranged at the top of the steel pipe, and all lines of the solar panel run from the inside of the air pipe. The electric energy generated by the solar panel is used for partial power utilization of equipment, so that the equipment is more energy-saving and environment-friendly, and the operation cost is greatly reduced. Or the top of the air outlet pipe 25 is provided with a lighting lamp which is camouflaged into a street lamp and is integrated with the surrounding environment. The height of the device is not more than 1000mm. The deodorizing device is arranged beside the inspection well cover, is similar to an electric cabinet, can not be thought of as deodorizing equipment, and reduces the objection and curiosity of residents.
Example 3
As shown in fig. 2 to 3, a gas treatment apparatus according to embodiment 3 of the present application includes: an air inlet pipe 19, a filtering device 20, a reaction device 21, an adsorption purification device 22 and a liquid level sensing device 23;
one end of the air inlet pipe 19 is connected with the reaction device 21, the other end of the air inlet pipe 19 extends into the airtight inspection well and keeps a certain distance with the liquid level in the inspection well, a filtering device 20 is further connected between the air inlet pipe 19 and the reaction device 21, the interiors of the air inlet pipe 19, the filtering device 20, the reaction device 21 and the adsorption purification device 22 are sequentially communicated, the pulse plasma reactor 17 is used for forming a pulse plasma reaction zone in the reaction device 21, and the liquid level sensing device 23 is used for detecting the liquid level in the inspection well, wherein the pulse plasma reactor 17 is powered by a solar power supply system 26.
As shown in fig. 4, the solar power supply system 26 includes a photovoltaic panel, a photovoltaic charging circuit, a storage battery, a voltage regulating circuit, a pulse generating circuit and a first pulse transformer, the power supply power is 200W, the output voltage is 5-10kV and is adjustable, the output form is in a pulse form, the frequency is 0-5000Hz and is adjustable, the pulse width is less than 1us, the rising edge is less than 300ns, specifically, the photovoltaic panel 27, the output voltage is 120V, and the maximum output current is 3.5A. The filter capacitor 28, the fourth inductor 29, the first switching tube 30, the second diode 31 and the output capacitor 32 form a photovoltaic charging circuit, and the charging voltage is 400V; the fifth inductor 33 is used for limiting charging current, the storage battery 34 stores electric energy, the second switch tube 35, the third diode 36, the sixth inductor 37, the third switch tube 38, the fourth diode 39 and the bus capacitor 40 together form a voltage regulating circuit, when the voltage of the storage battery is higher than a set bus voltage, the voltage regulating circuit works in a voltage reducing mode, the third switch tube 38 is in an off state, the second switch tube 35, the third diode 36, the sixth inductor 37, the fourth diode 39 and the bus capacitor 40 form a buck voltage regulating circuit, and the bus voltage is regulated by the duty ratio of the second switch tube 35; when the voltage of the storage battery is lower than the set bus voltage, the voltage regulating circuit works in a BOOST mode, at the moment, the second switching tube 35 is in a conducting state, the third diode 36, the sixth inductor 37, the third switching tube 38, the fourth diode 39 and the bus capacitor 40 form a BOOST circuit, and the bus voltage is regulated by the duty ratio of the third switching tube 38. The seventh inductor 41 is used for switching on and switching off the direct current, the fourth switching tube 42 is used for generating low-voltage pulse current, and the working frequency and the switching-on time of the fourth switching tube are determined by signals given by a control circuit; the front end of the second resonance capacitor 43 is connected with the fourth switching tube 42, the rear end of the second resonance capacitor 43 is connected with a low-voltage package of the second pulse transformer 44, and when the fourth switching tube 42 is opened, an LC oscillating circuit is formed; the high-voltage package of the second pulse transformer 44 is connected to the pulse plasma reactor 17, wherein the first switching tube, the second switching tube, the third switching tube and the fourth switching tube may be MOS tubes, IGBT elements or other forms of controllable switching tubes.
The solar power supply system has the advantages that: 1. the photovoltaic power supply is adopted, and the solar energy power supply is self-sufficient, green and low-carbon. 2. The voltage regulating circuit adopts a combined circuit, can be automatically switched between the voltage boosting circuit and the voltage reducing circuit, has small circuit volume, high voltage regulating precision and small ripple coefficient, and is convenient for the post-stage high-precision control; 3. the high-power pulse generating circuit adopts a laminated busbar structure, so that the inductance of a circuit is greatly reduced, and the pulse width is reduced; 4. the pulse transformer is wound by adopting a special process, and the high-voltage and low-voltage bags are perfectly matched, so that the output reliability is ensured, the leakage inductance of the low-voltage bags is effectively reduced, and the pulse width is further reduced.
It should be noted that, the control circuit adopts a DSP chip F28335 as a control core unit, and the peripheral circuit includes an IGBT driving circuit, a DI/DO digital input/output module, an analog sampling circuit, a communication circuit, and the like. The clock frequency of the DSP chip is up to 150MHz, the data acquisition and processing speed is extremely high, an embedded control program which is independently developed is built in the DSP chip, customized high-precision control can be achieved, when illumination is sufficient, power can be supplied through a photovoltaic panel completely, and when illumination is insufficient, power can be supplied through a storage battery.
Example 4
As shown in fig. 5, a control method according to embodiment 4 of the present application is used for controlling the gas processing apparatus according to any one of embodiments 2 or 3, and the control method includes:
s101, acquiring liquid level height data in an inspection well detected by a liquid level sensing device;
s102, calculating liquid level variation in a certain time according to the liquid level height data, and regulating and controlling the pulse plasma reactor according to the liquid level variation;
if the liquid level variation is smaller than the preset threshold value, the pulse plasma reactor is not required to be controlled to work;
if the liquid level variation is larger than the preset threshold, the pulse plasma reactor is controlled to work, and the power of the pulse plasma reactor is increased along with the increase of the liquid level variation.
When the water level of the manhole does not change much, the gas that occasionally overflows from the manhole is adsorbed by the honeycomb ceramics of the adsorption purification device 22. When the water level of the inspection well rises, odor overflows, the odor enters the gas treatment device through the air inlet pipe 19, the PLC control system receives the rising liquid level detected by the liquid level sensing device 23 and the rising height reaches a preset threshold value, the pulse plasma reactor is controlled to work, the power of the pulse plasma reactor is increased along with the increase of the liquid level variation, high-energy particles are generated, malodorous gas molecules, oxygen and water are bombarded, the molecules are ionized into ionic states and recombined into harmless substances, and therefore the purpose of deodorization is achieved, and ozone molecules in the gas can kill viruses, bacteria, flying insects and the like in the gas. On the contrary, when the water level of the inspection well is lowered, because of the pressure difference, air in the inspection well is sucked back, meanwhile, the PLC control system receives that the liquid level detected by the liquid level sensing device 23 is lowered and the lowering height reaches the preset threshold value, the pulse plasma reactor is controlled to work, the power of the pulse plasma reactor is increased along with the increase of the liquid level variation, and the outside air is sucked back into the reaction device 21 to be ionized to generate ozone and sucked into the inspection well, so that ozone can be utilized to kill and deodorize in the well.
In order to ensure the effective deodorizing effect, an ozone detecting instrument is arranged in the air outlet pipe 25 and used for detecting the ozone concentration in the exhaust gas, a certain oxidation active substance is kept to slightly excessively operate in the operation process, and when the ozone detecting instrument detects that the ozone concentration emission in the air outlet pipe 25 exceeds the standard, the operating power is automatically reduced, so that the deodorizing effect is met, and meanwhile, the escape risk of redundant ozone is reduced.
In this embodiment, the liquid level sensor 23 feeds back the liquid level change in the inspection well to the PLC control system in real time, and the PLC control system adjusts the output power of the pulse plasma reactor 17 by controlling the control circuit according to the set liquid level height range, thereby controlling the ozone generation amount. When the liquid level rises, the odor concentration fluctuates greatly, the detection data of the liquid level sensing device 23 is fed back to the PLC control system, the PLC control system regulates the output of the power supply 1 according to a set program to increase the ozone generation amount, when the liquid level falls, the odor concentration also fluctuates greatly, the detection data of the liquid level sensing device 23 is fed back to the PLC control system, and the PLC control system regulates the output of the power supply 1 according to a set program to increase the ozone generation amount, so that the aim of high-efficiency deodorization can be achieved.
Example 5
A computer readable storage medium according to embodiment 5 of the present application, the computer readable storage medium storing program code for execution by a device, the program code including steps for performing a method as in any one of the implementations of embodiment 4 of the present application;
wherein the computer readable storage medium may be a Read Only Memory (ROM), a static storage device, a dynamic storage device, or a random access memory (random access memory, RAM); the computer readable storage medium may store program code which, when executed by a processor, is adapted to perform the steps of a method as in any one of the implementations of embodiment 4 of the present application.
Example 6
As shown in fig. 6, an electronic device according to embodiment 6 of the present application includes a processor, a memory, and a program or an instruction stored on the memory and executable on the processor, where the program or the instruction implements the method according to any one of the implementation manners of embodiment 4 of the present application when executed by the processor;
the processor may be a general-purpose PLC controller, a central processing unit (central processing unit, CPU), a microprocessor, an application specific integrated circuit (application specific integrated circuit, ASIC), a graphics processor (graphics processing unit, GPU) or one or more integrated circuits for executing related programs to implement the methods in any of the implementations of embodiment 4 of the present application.
The processor may also be an integrated circuit electronic device with signal processing capabilities. In implementation, each step of the method in any implementation of embodiment 4 of the present application may be implemented by an integrated logic circuit of hardware in a processor or an instruction in a software form.
The processor may also be a general purpose processor, a digital signal processor, an Application Specific Integrated Circuit (ASIC), an off-the-shelf programmable gate array (field programmable gate array, FPGA) or other programmable logic device, a discrete gate or transistor logic device, a discrete hardware component. The disclosed methods, steps, and logic blocks in the embodiments of the present application may be implemented or performed. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like. The steps of the method disclosed in connection with the embodiments of the present application may be embodied directly in a hardware decoding processor or in a combination of hardware and software modules in the decoding processor. The software modules may be located in a random access memory, flash memory, read only memory, programmable read only memory, or electrically erasable programmable memory, registers, etc. as well known in the art. The storage medium is located in a memory, and the processor reads information in the memory, and in combination with its hardware, performs functions necessary for execution by the units included in the data processing apparatus of the embodiment of the present application, or executes a method in any implementation manner of embodiment 4 of the present application.
The above is only a preferred embodiment of the present application; the scope of protection of the present application is not limited in this respect. Any person skilled in the art, within the technical scope of the present disclosure, shall cover the protection scope of the present application by making equivalent substitutions or alterations to the technical solution and the improved concepts thereof.

Claims (10)

1. The control circuit is characterized by comprising a control chip, a switching circuit, a Buck circuit, a second IGBT element, an RCD absorption loop, a first pulse transformer and a pulse plasma reactor;
the switching circuit is connected with a power supply on one side, and connected with a full-bridge rectifier on the other side;
the Buck circuit comprises a second capacitor and a first IGBT element for adjusting the voltage at two ends of the second capacitor, wherein a collector of the first IGBT element is electrically connected with a first output end of the full-bridge rectifier, an emitter of the first IGBT element is electrically connected with a cathode of a first diode, and the first diode, the second inductor and the second capacitor form a series circuit;
a second IGBT element connected in parallel with the second capacitor, and a third inductance is connected in series between a collector of the second IGBT element and the second capacitor;
an RCD absorption loop connected in parallel to both ends of the emitter and collector of the second IGBT element;
the low-voltage package of the first pulse transformer is connected with two ends of the RCD absorption loop, the high-voltage package of the first pulse transformer is connected with the pulse plasma reactor, and the second IGBT element and the first resonance capacitor are connected in series with the low-voltage package of the first pulse transformer;
the switch circuit, the grid electrode of the first IGBT element and the grid electrode of the second IGBT element are electrically connected with the control chip.
2. A control circuit according to claim 1, wherein: the working mode of the first IGBT element is a fixed bandwidth, and the working frequency of the first IGBT element is not lower than 100MHz.
3. A control circuit according to claim 2, wherein: the switch circuit comprises a plurality of contactors electrically connected with the control chip, and the contactors are used for controlling the on-off of a circuit between the power supply and the full-bridge rectifier, wherein the contactors are electrically connected with the control chip.
4. A control circuit according to claim 3, wherein: the RCD absorption loop comprises an absorption resistor, an absorption diode and an absorption capacitor, wherein the absorption resistor and the absorption diode are connected in parallel and then connected in series with the absorption capacitor.
5. A control circuit according to any one of claims 1-4, wherein: the low-voltage package of the first pulse transformer adopts litz wire coiling, the high-voltage package of the first pulse transformer adopts multi-layer insulation high-voltage litz wire coiling, the high-voltage package and the low-voltage package of the first pulse transformer are both supported by adopting a framework, and a safe insulation gap is reserved between the high-voltage package and the low-voltage package of the first pulse transformer.
6. A control circuit according to claim 5, wherein: the full-bridge rectifier further comprises a filter circuit, wherein the filter circuit comprises a first inductor and a first capacitor, and the first inductor and the first capacitor form a closed loop with a first output end and a second output end of the full-bridge rectifier.
7. A gas processing apparatus, comprising: the device comprises an air inlet pipe, a filtering device, a reaction device, an adsorption purification device and a liquid level sensing device;
one end of the air inlet pipe is connected with the reaction device, the other end of the air inlet pipe extends into the airtight inspection well and keeps a certain distance with the liquid level in the inspection well, a filtering device is further connected between the air inlet pipe and the reaction device, the air inlet pipe, the filtering device, the reaction device and the adsorption purification device are sequentially communicated, the pulse plasma reactor is used for forming a pulse plasma reaction area in the reaction device, the liquid level sensing device is used for detecting the liquid level height in the inspection well, and the pulse plasma reactor is powered by the control circuit according to any one of claims 1-6.
8. A gas treatment apparatus according to claim 7, wherein: the free end of the air inlet pipe comprises a flexible structure which deforms under the stress action of the liquid level sensing device.
9. A gas treatment apparatus according to claim 7, wherein: the pulse plasma reactor is powered by a solar power supply system, wherein the solar power supply system is used for outputting an adjustable voltage in a pulse form.
10. A control method for controlling a gas processing apparatus according to any one of claims 7 to 9, characterized in that the control method comprises:
acquiring liquid level height data in the inspection well detected by a liquid level sensing device;
calculating the liquid level variation in a certain time according to the liquid level height data, and regulating and controlling the pulse plasma reactor according to the liquid level variation;
if the liquid level variation is smaller than the preset threshold value, the pulse plasma reactor is not required to be controlled to work;
if the liquid level variation is larger than the preset threshold, the pulse plasma reactor is controlled to work, and the power of the pulse plasma reactor is increased along with the increase of the liquid level variation.
CN202410116736.9A 2024-01-29 2024-01-29 Control circuit, gas treatment device and control method Active CN117647948B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410116736.9A CN117647948B (en) 2024-01-29 2024-01-29 Control circuit, gas treatment device and control method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410116736.9A CN117647948B (en) 2024-01-29 2024-01-29 Control circuit, gas treatment device and control method

Publications (2)

Publication Number Publication Date
CN117647948A true CN117647948A (en) 2024-03-05
CN117647948B CN117647948B (en) 2024-04-30

Family

ID=90043608

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410116736.9A Active CN117647948B (en) 2024-01-29 2024-01-29 Control circuit, gas treatment device and control method

Country Status (1)

Country Link
CN (1) CN117647948B (en)

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011033524A (en) * 2009-08-04 2011-02-17 Tokyo Metropolitan Sewerage Service Corp Gas sampling device
JP2012219582A (en) * 2011-04-13 2012-11-12 Toshin Kogyo Co Ltd Deodorizing invert manhole and sewage basin
CN104389586A (en) * 2014-10-20 2015-03-04 重庆科技学院 Oil well working fluid level measuring device and method
CN105442698A (en) * 2015-12-15 2016-03-30 重庆金灿钢结构有限公司 Septic tank safety inspection shaft control system
CN105553322A (en) * 2015-12-11 2016-05-04 浙江大维高新技术股份有限公司 Power source device for plasma generation
CN110455675A (en) * 2019-09-09 2019-11-15 西北农林科技大学 Producing methane through anaerobic fermentation amount automatic measurement system and method
CN111217415A (en) * 2019-11-12 2020-06-02 广州市欧树环保科技有限公司 A energy-efficient air supporting device for sewage treatment
CN112827347A (en) * 2021-03-22 2021-05-25 郑州绿城生物技术有限公司 Novel biological soil deodorization filter tank and deodorization process
CN218204753U (en) * 2022-10-19 2023-01-03 湖北鼎誉环保科技有限公司 Automatic siphon drainage type six-water-seal aerosol odor blocking device
CN218449862U (en) * 2022-08-17 2023-02-03 浙江大维高新技术股份有限公司 Novel pulse plasma power supply
CN115920535A (en) * 2022-12-30 2023-04-07 浙江大维高新技术股份有限公司 Cremation machine flue gas treatment equipment and method
CN116036788A (en) * 2022-12-30 2023-05-02 浙江大维高新技术股份有限公司 Deodorization device and method adopting pulse plasma discharge
CN116477792A (en) * 2023-04-17 2023-07-25 江西零真生态环境集团有限公司 Integrated intelligent sewage treatment system and process
CN219652860U (en) * 2023-05-22 2023-09-08 博兴县生态环境监控中心 Environment-friendly septic tank
WO2024007578A1 (en) * 2022-07-08 2024-01-11 中国石油化工股份有限公司 Testing device and method for measuring oil, gas and water contents in rock

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011033524A (en) * 2009-08-04 2011-02-17 Tokyo Metropolitan Sewerage Service Corp Gas sampling device
JP2012219582A (en) * 2011-04-13 2012-11-12 Toshin Kogyo Co Ltd Deodorizing invert manhole and sewage basin
CN104389586A (en) * 2014-10-20 2015-03-04 重庆科技学院 Oil well working fluid level measuring device and method
CN105553322A (en) * 2015-12-11 2016-05-04 浙江大维高新技术股份有限公司 Power source device for plasma generation
CN105442698A (en) * 2015-12-15 2016-03-30 重庆金灿钢结构有限公司 Septic tank safety inspection shaft control system
CN110455675A (en) * 2019-09-09 2019-11-15 西北农林科技大学 Producing methane through anaerobic fermentation amount automatic measurement system and method
CN111217415A (en) * 2019-11-12 2020-06-02 广州市欧树环保科技有限公司 A energy-efficient air supporting device for sewage treatment
CN112827347A (en) * 2021-03-22 2021-05-25 郑州绿城生物技术有限公司 Novel biological soil deodorization filter tank and deodorization process
WO2024007578A1 (en) * 2022-07-08 2024-01-11 中国石油化工股份有限公司 Testing device and method for measuring oil, gas and water contents in rock
CN218449862U (en) * 2022-08-17 2023-02-03 浙江大维高新技术股份有限公司 Novel pulse plasma power supply
CN218204753U (en) * 2022-10-19 2023-01-03 湖北鼎誉环保科技有限公司 Automatic siphon drainage type six-water-seal aerosol odor blocking device
CN115920535A (en) * 2022-12-30 2023-04-07 浙江大维高新技术股份有限公司 Cremation machine flue gas treatment equipment and method
CN116036788A (en) * 2022-12-30 2023-05-02 浙江大维高新技术股份有限公司 Deodorization device and method adopting pulse plasma discharge
CN116477792A (en) * 2023-04-17 2023-07-25 江西零真生态环境集团有限公司 Integrated intelligent sewage treatment system and process
CN219652860U (en) * 2023-05-22 2023-09-08 博兴县生态环境监控中心 Environment-friendly septic tank

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
王兵;张悦;任宏洋;岳丞;: "Mn_3O_4催化臭氧化钻井废水的作用机理", 环境工程学报, no. 10, 5 October 2015 (2015-10-05) *

Also Published As

Publication number Publication date
CN117647948B (en) 2024-04-30

Similar Documents

Publication Publication Date Title
KR101430647B1 (en) air cleaning streetlight
KR101304139B1 (en) Streetlamp type vacreator
CN105024089A (en) Microbial fuel cell artificial wetland device for sewage treatment and power supply to wetland
CN117647948B (en) Control circuit, gas treatment device and control method
CN211069611U (en) Full-automatic photodissociation clean system
CN105776430A (en) Electro-catalytic oxidation device and method for sewage treatment
KR101249096B1 (en) Sreetlamp generated by wind power and solar light power unified lamp
CN107983050A (en) A kind of electrostatic depuration and water mist air purifier
CN207175725U (en) A kind of urban waterway sewage disposal system
CN102228713B (en) Air purifier capable of generating high-energy ions
CN213707745U (en) Horizontal quasi-molecule ozone generator
CN105668691A (en) Novel photoelectron-catalysis sewage purification tank
CN213679829U (en) Vertical quasi-molecular ozone generator applied to sewage and waste gas treatment system
CN212680579U (en) Composite ion deodorization purifier
CN108654223A (en) Non-energy-consumption sewage treatment plant odor treatment system
CN204079590U (en) A kind of sewage generating system adopting anaerobically fermenting process
CN207287136U (en) A kind of plasma cooperative photocatalysis purifier
CN203155065U (en) Waste gas purification treatment device
CN203469781U (en) UV light oxygen deodorizer
CN207546185U (en) A kind of high efficiency composition deodorization device
CN220589555U (en) Integrated deodorizing equipment for water treatment station room
CN210974306U (en) Sewage shallow source ecological floating bed repairing device
KR101233568B1 (en) Plasma generator and apparatus using the same to remove an odor
CN212108809U (en) Air purification device for effectively killing new corona and influenza viruses
CN220071222U (en) Integrated small sewage/septic tank deodorizing equipment

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant