CN218449862U - Novel pulse plasma power supply - Google Patents
Novel pulse plasma power supply Download PDFInfo
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- CN218449862U CN218449862U CN202222172769.4U CN202222172769U CN218449862U CN 218449862 U CN218449862 U CN 218449862U CN 202222172769 U CN202222172769 U CN 202222172769U CN 218449862 U CN218449862 U CN 218449862U
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- 230000001105 regulatory effect Effects 0.000 claims abstract description 10
- 239000003990 capacitor Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000010521 absorption reaction Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 230000006835 compression Effects 0.000 abstract description 5
- 238000007906 compression Methods 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The utility model discloses to the plasma power supply among the prior art problem that is not very suitable for on miniaturized load, provided a novel pulse plasma power supply belongs to plasma power supply technical field, including rectifier circuit, filter circuit, buck regulator circuit, the pulse circuit that connects gradually, pulse circuit's output and pulse transformer T1 connect, the utility model discloses current plasma power supply compares has reduced the silicon controlled rectifier pressure regulating, changes the Buck circuit pressure regulating into, and control accuracy is higher, and has left out the magnetic compression circuit, has saved the cost.
Description
Technical Field
The utility model belongs to the technical field of the plasma power supply, concretely relates to novel pulse plasma power supply.
Background
The existing plasma power supply is suitable for high-capacity and high-voltage loads, and the adopted power supply scheme is silicon controlled voltage regulation, three-phase pre-boosting, a pulse generation circuit, pulse boosting and magnetic compression narrowing. For example, patent No. CN105553322A, entitled a power supply device for plasma generation, has a small load capacity and a low load voltage for a miniaturized load, and is no longer suitable for the original solution.
Disclosure of Invention
The utility model discloses to the plasma power supply among the prior art problem that is not very suitable for on miniaturized load, provided a novel pulse plasma power supply. The utility model discloses current plasma power supply compares, has reduced the silicon controlled rectifier pressure regulating, changes the BUCK circuit pressure regulating into, and control accuracy is higher, and has left out the magnetic compression circuit, has saved the cost.
The invention aims to be realized by the following technical scheme: the pulse transformer comprises a rectification circuit, a filter circuit, a Buck voltage regulation circuit and a pulse circuit which are connected in sequence, wherein the output end of the pulse circuit is connected with a pulse transformer T1.
In the scheme, two semiconductor switches are used for realizing accurate control of pulse peak values and pulse high-voltage frequencies, so that a silicon controlled voltage regulating circuit and a magnetic compression circuit are reduced, and the manufacturing cost of the plasma power supply is reduced.
Preferably, the rectifier circuit is a full bridge rectifier circuit including four diodes.
Preferably, the filter circuit comprises an inductor L1 and a capacitor C1, and the inductor L1 and the capacitor C1 form an LC filter circuit.
Preferably, the Buck voltage regulating circuit comprises a semiconductor switch G1, a collector of the semiconductor switch G1 is connected to one end of a filter capacitor C3, an emitter of the semiconductor switch G1 is sequentially connected with an inductor L2 and a capacitor C2, a diode D1 is connected to two ends of the inductor L2 and the capacitor C2, a cathode of the diode D1 is connected to the inductor L2, and an anode of the diode D1 is connected to the capacitor C2 and then connected to the other end of the filter capacitor C1. The Buck voltage regulating circuit is also called a voltage reduction type conversion circuit and has the function of reducing circuit voltage difference.
Preferably, the pulse circuit includes an inductor L3 and a semiconductor switch G2, and an RCD protection circuit is connected in parallel to both ends of the semiconductor switch G2. By controlling the switching of the semiconductor switch G2, a pulse of a low voltage is input to the primary coil of the pulse transformer T1.
Preferably, the RCD protection circuit includes a diode D3 and an absorption capacitor C4 connected in sequence, and a resistor R1 is connected in parallel to two ends of the diode D3. First, when the high voltage breakdown flashover occurs, the secondary coil of the pulse transformer T1 carries out reverse impact current and is coupled to the primary coil of the pulse transformer T1, and the reverse impact current flows through the leakage inductance of the transformer, the resonant capacitor C5 and the diode D3 and enters the absorption capacitor C4 to provide high voltage breakdown buffer protection. Second, the spike voltage of the semiconductor switch G2 is suppressed.
Preferably, a resonant capacitor C3 is further disposed between the pulse circuit and the pulse transformer T1, and the resonant capacitor C3 and the leakage inductance of the transformer T1 may form a resonant circuit to increase the oscillation frequency of the transformer, thereby increasing the pulse frequency of the pulse power supply.
Preferably, the semiconductor switch G1 or the semiconductor switch G2 is an IGBT module.
Compared with the prior art, the utility model discloses following beneficial effect has:
the utility model discloses used two semiconductor switch to realize the accurate control of pulse peak value and pulse high-voltage frequency, reduced silicon controlled rectifier regulator circuit and magnetism compression circuit, reduced the manufacturing cost of plasma power.
Drawings
Fig. 1 is a schematic diagram of the circuit structure of the present invention.
Detailed Description
The invention will be further described with reference to the embodiments shown in the drawings to which:
as shown in fig. 1, the pulse voltage regulator comprises a rectifying circuit, a filtering circuit, a Buck voltage regulating circuit and a pulse circuit which are connected in sequence, wherein the output end of the pulse circuit is connected with a pulse transformer T1. A resonant capacitor C3 is arranged between the pulse circuit and the pulse transformer T1, and the resonant capacitor C3 and the leakage inductance of the transformer T1 can form a resonant circuit to improve the oscillation frequency of the transformer, so that the pulse frequency of the pulse power supply is improved.
The rectifier circuit is a full-bridge rectifier circuit composed of four diodes.
The filter circuit comprises an inductor L1 and a capacitor C1, and the inductor L1 and the capacitor C1 form an LC filter circuit.
Above-mentioned Buck regulator circuit includes semiconductor switch G1, and semiconductor switch G1's collecting electrode is connected in filter capacitor C3's one end, and semiconductor switch G1's projecting pole has connected gradually inductance L2, electric capacity C2, is connected with diode D1 at inductance L2, electric capacity C2's both ends, and diode D1's negative pole and inductance L2 are connected, and the other end at filter capacitor C1 is connected after electric capacity C2 and diode D1's positive pole is connected. The Buck voltage regulating circuit is also called a Buck conversion circuit and has the function of reducing the circuit voltage difference.
The pulse circuit comprises an inductor L3 and a semiconductor switch G2, and two ends of the semiconductor switch G2 are connected with an RCD protection circuit in parallel. By controlling the switching of the semiconductor switch G2, a pulse of a low voltage is input to the primary coil of the pulse transformer T1. The RCD protection circuit comprises a diode D3 and an absorption capacitor C4 which are connected in sequence, and two ends of the diode D3 are connected with a resistor R1 in parallel. First, when the high voltage breakdown flashover occurs, the reverse impact current of the secondary coil of the pulse transformer T1 is coupled to the primary coil of the pulse transformer T1, and then the reverse impact current flows through the leakage inductance of the transformer, the resonant capacitor C5 and the diode D3 and enters the absorption capacitor C4 to provide the high voltage breakdown buffering protection. Second, the spike voltage of the semiconductor switch G2 is suppressed.
The utility model provides a semiconductor switch G1 and semiconductor switch G2 are the IGBT module. The semiconductor switch G1 and the semiconductor switch G2 are controlled to be opened and closed by the IGBT driving module, and the control precision can reach us level.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications, additions and substitutions for the specific embodiments described herein may be made by those skilled in the art without departing from the spirit of the invention or exceeding the scope of the invention as defined in the accompanying claims.
Claims (8)
1. The utility model provides a novel pulse plasma power supply which characterized in that, including rectifier circuit, filter circuit, buck voltage regulating circuit, the pulse circuit who connects gradually, pulse circuit's output and pulse transformer T1 are connected.
2. The novel pulsed plasma power supply of claim 1 wherein said rectifying circuit is a full bridge rectifying circuit consisting of four diodes.
3. The novel pulsed plasma power supply of claim 1, wherein the filter circuit comprises an inductor L1 and a capacitor C1, and the inductor L1 and the capacitor C1 form an LC filter circuit.
4. The novel pulse plasma power supply according to claim 1, wherein the Buck voltage regulation circuit comprises a semiconductor switch G1, a collector of the semiconductor switch G1 is connected to one end of a filter capacitor C3, an emitter of the semiconductor switch G1 is sequentially connected to an inductor L2 and a capacitor C2, a diode D1 is connected to two ends of the inductor L2 and the capacitor C2, a cathode of the diode D1 is connected to the inductor L2, and the capacitor C2 is connected to an anode of the diode D1 and then connected to the other end of the filter capacitor C1.
5. The novel pulsed plasma power supply according to claim 1, wherein the pulse circuit comprises an inductor L3 and a semiconductor switch G2, and an RCD protection circuit is connected in parallel with two ends of the semiconductor switch G2.
6. The novel pulsed plasma power supply according to claim 5, wherein the RCD protection circuit comprises a diode D3 and an absorption capacitor C4 which are connected in sequence, and a resistor R1 is connected in parallel at two ends of the diode D3.
7. The novel pulse plasma power supply according to claim 1, wherein a resonant capacitor C3 is further provided between the pulse circuit and the pulse transformer T1.
8. The novel pulsed plasma power supply of claim 4 or 5, wherein the semiconductor switch G1 or G2 is an IGBT module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222172769.4U CN218449862U (en) | 2022-08-17 | 2022-08-17 | Novel pulse plasma power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222172769.4U CN218449862U (en) | 2022-08-17 | 2022-08-17 | Novel pulse plasma power supply |
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| Publication Number | Publication Date |
|---|---|
| CN218449862U true CN218449862U (en) | 2023-02-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202222172769.4U Active CN218449862U (en) | 2022-08-17 | 2022-08-17 | Novel pulse plasma power supply |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117647948A (en) * | 2024-01-29 | 2024-03-05 | 浙江大维高新技术股份有限公司 | Control circuit, gas treatment device and control method |
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2022
- 2022-08-17 CN CN202222172769.4U patent/CN218449862U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117647948A (en) * | 2024-01-29 | 2024-03-05 | 浙江大维高新技术股份有限公司 | Control circuit, gas treatment device and control method |
| CN117647948B (en) * | 2024-01-29 | 2024-04-30 | 浙江大维高新技术股份有限公司 | Control circuit, gas treatment device and control method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Hangzhou Dawei Software Co.,Ltd. Assignor: ZHEJIANG DOWAY ADVANCED TECHNOLOGY Co.,Ltd. Contract record no.: X2023980039512 Denomination of utility model: New Pulse Plasma Power Supply Granted publication date: 20230203 License type: Common License Record date: 20230814 |
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| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Jinhua Dawei Environmental Engineering Co.,Ltd. Assignor: ZHEJIANG DOWAY ADVANCED TECHNOLOGY Co.,Ltd. Contract record no.: X2023980052752 Denomination of utility model: New pulse plasma power supply Granted publication date: 20230203 License type: Common License Record date: 20231218 Assignee: Zhejiang Odor Control Engineering Research Center Co.,Ltd. Assignor: ZHEJIANG DOWAY ADVANCED TECHNOLOGY Co.,Ltd. Contract record no.: X2023980052750 Denomination of utility model: New pulse plasma power supply Granted publication date: 20230203 License type: Common License Record date: 20231218 |
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| EE01 | Entry into force of recordation of patent licensing contract |