CN117646173A - Method for preparing Jin Xihan material layer for transitional heat sink - Google Patents
Method for preparing Jin Xihan material layer for transitional heat sink Download PDFInfo
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- CN117646173A CN117646173A CN202410125438.6A CN202410125438A CN117646173A CN 117646173 A CN117646173 A CN 117646173A CN 202410125438 A CN202410125438 A CN 202410125438A CN 117646173 A CN117646173 A CN 117646173A
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000000463 material Substances 0.000 title claims abstract description 26
- 238000001704 evaporation Methods 0.000 claims abstract description 106
- 239000010931 gold Substances 0.000 claims abstract description 97
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 95
- 229910052737 gold Inorganic materials 0.000 claims abstract description 95
- 230000008020 evaporation Effects 0.000 claims abstract description 74
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 66
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 64
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 55
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052802 copper Inorganic materials 0.000 claims abstract description 47
- 239000010949 copper Substances 0.000 claims abstract description 47
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910000679 solder Inorganic materials 0.000 claims abstract description 35
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 33
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000009713 electroplating Methods 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- 230000009977 dual effect Effects 0.000 claims description 11
- 238000005566 electron beam evaporation Methods 0.000 claims description 9
- 238000004806 packaging method and process Methods 0.000 abstract description 20
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000007747 plating Methods 0.000 description 35
- 238000004544 sputter deposition Methods 0.000 description 16
- 238000005476 soldering Methods 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 230000002929 anti-fatigue Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention provides a method for preparing a Jin Xihan material layer for a transitional heat sink, which comprises the following steps: and sequentially preparing a metal seed layer, a first copper layer, a nickel layer, a gold layer and a platinum layer on the front side and the back side of the substrate, and simultaneously evaporating gold and tin by adopting a double electron gun to prepare the gold-tin solder layer for the transitional heat sink. According to the method for preparing the Jin Xihan material layer of the transitional heat sink, the Jin Xihan material layer for the transitional heat sink is prepared by simultaneously evaporating gold and tin by adopting the double electron gun, and the solder with the gold-tin proportion required by preparation is accurately and stably prepared by controlling different evaporation rates of a gold source and a tin source, wherein the weight ratio of gold in the gold-tin solder is accurately adjustable within the range of 70-80 wt%, and finally the formed transitional heat sink can well meet the packaging requirement of a semiconductor laser and has a large-scale popularization and application prospect.
Description
Technical Field
The invention relates to the technical field of welding material treatment, in particular to a method for preparing a Jin Xihan material layer for a transitional heat sink.
Background
Gold-tin solder is a commonly used packaging welding material, and from the earliest indium solder to gold-tin soldering lug to the current preparation of Jin Xihan layers, the gold-tin solder is used for meeting the requirements of higher power, better reliability, longer service life and high packaging automation productivity of semiconductor lasers. In the development process of packaging technology, indium solder is widely used because of the soft material property and good ductility, but has poor creep resistance, and cannot meet the long-term reliability requirement for a high-power semiconductor laser. The gold-tin soldering lug is a good choice, has excellent anti-fatigue and anti-creep properties and ideal heat dissipation property, and meets the packaging requirement of the high-power semiconductor laser. However, since the gold-tin soldering tab has a solder void when the semiconductor laser is packaged, and the solder overflows from the cavity surface of the semiconductor laser, and the requirements of packaging the semiconductor laser chip with larger power cannot be met by the shearing force and the solder void ratio through the reliability test of the soldering of the gold-tin soldering tab, the gold-tin proportion of the gold-tin soldering tab is single, more packaging requirements cannot be met, and the automatic production cannot be realized by using the gold-tin soldering tab package, so that the mode of presetting the gold-tin solder to the transition heat sink is generated, the reliability is better, the heat dissipation capability is better, the service life is longer and the productivity is required.
The preset gold tin can be prepared by different methods, such as:
1) The magnetron sputtering method is used for preparing gold-tin solder of the gold-tin alloy target, firstly, the gold-tin alloy target can only have one gold-tin proportion, such as Au80Sn20, the proportion of the solder can not be adjusted, and the solder is single, so that the packaging process requirement can not be met; the utilization rate of the gold-tin alloy material prepared by the magnetron sputtering method is low, waste of noble metal Au is easy to cause, extra cost is generated in the recovery process of the target, meanwhile, the mass of Au required in the process of manufacturing the target is large, and generally, one target is almost millions; in addition, for example, the preparation of the gold-tin solder with the thickness of 6um is very long, about 10 hours is needed for carrying out the process, the productivity is low, and the cost is high.
2) The gold-tin solder is manufactured by using an electroplating mode, and the uniformity of a film of the electroplating mode is about +/-10%, so that the proportion of the prepared gold-tin is difficult to control in a process range accurately, and the packaging effect is quite unsatisfactory.
3) The preparation of gold-tin solder is realized by evaporating the multi-layer film layers of the gold layer and the tin layer in an electron beam evaporation mode, but when the gold layer and the tin layer are fused, the accurate proportion fusion on the microcosmic scale cannot be achieved, so that the uneven proportion of gold and tin can be easily obtained, and the encapsulation effect of the proportion of gold and tin cannot be accurately controlled.
The cost of each method for preparing gold-tin solder is high, the process accuracy is not high, the gold-tin proportion is difficult to control accurately, the packaging process is uncontrollable, and the heat dissipation can not meet the requirements.
Disclosure of Invention
In order to solve the technical problems, the invention provides a method for preparing a Jin Xihan material layer for a transitional heat sink, which comprises the steps of simultaneously evaporating a gold source and a tin source by electron beams by a double electron gun, accurately and stably preparing a gold-tin solder layer with a specific gold-tin ratio by controlling the evaporation rates of the gold source and the tin source, and finally forming the transitional heat sink which can well meet the packaging requirement of a semiconductor laser and can greatly meet the requirement of industrial production.
To achieve the purpose, the invention adopts the following technical scheme:
the invention provides a method for preparing a Jin Xihan material layer for a transitional heat sink, which comprises the following steps:
and sequentially preparing a metal seed layer, a first copper layer, a nickel layer, a gold layer and a platinum layer on the front side and the back side of the substrate, and simultaneously evaporating gold and tin by adopting a double electron gun to prepare the gold-tin solder layer for the transitional heat sink.
The method for preparing the Jin Xihan material layer for the transitional heat sink adopts the double electron guns to simultaneously evaporate gold and tin to prepare the Jin Xihan material layer for the transitional heat sink, and has the advantages of accurately controllable gold-tin ratio, uniform fusion of each point of gold-tin solder, more controllable temperature for a later packaging process, fewer packaging defects and higher packaging yield. The method disclosed by the invention is simple to operate, convenient to regulate and control and wide in application prospect.
Preferably, the method comprises the steps of:
(1) Preparing a metal seed layer on the front and back surfaces of the substrate by adopting an electron beam evaporation method;
(2) Sequentially electroplating a first copper layer, a nickel layer and a gold layer on the metal seed layer, and evaporating to prepare a platinum layer;
(3) And preparing a Jin Xihan material layer by simultaneously evaporating gold and tin on the platinum layer by adopting a double electron gun to obtain the gold-tin solder layer for the transitional heat sink.
The invention cleans the substrate before preparing the metal seed layer on the front and back surfaces of the substrate. The cleaning liquid used in the cleaning treatment is acetone, the isopropanol is dehydrated after ultrasonic treatment is carried out for 30min, deionized water is washed, and finally the drying is carried out in a drier device.
Preferably, the metal seed layer in the step (1) includes a titanium layer and a second copper layer sequentially disposed on the front and back surfaces of the substrate.
Preferably, the process conditions for preparing the metal seed layer: vacuum degree higher than 2.0X10 -6 Tor may be, for example, 1.0X10 -6 Tor、8.0×10 -7 Tor、5.0×10 -7 Tor or 1.0X10 -7 Tor et al, but is not limited to the recited values, and other values not recited in this range are equally applicable.
The sputtering temperature is 50 to 100 ℃, and may be, for example, 50 ℃, 55 ℃, 60 ℃, 70 ℃, 80 ℃, 90 ℃, or 100 ℃, but is not limited to the values listed, and other values not listed in the range are applicable.
The evaporation rate of titanium is 0.1 to 5A/s, and may be, for example, 0.1A/s, 0.5A/s, 1A/s, 2A/s, 3A/s, 4A/s, or 5A/s, etc., but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
Preferably, the thickness of the titanium layer is 500 to 2000A, for example, 500A, 600A, 800A, 1000A, 1500A, 2000A, or the like, but the thickness is not limited to the above-mentioned values, and other values not mentioned in the above-mentioned value range are equally applicable.
The evaporation rate of copper is 0.1 to 15A/s, and may be, for example, 0.1A/s, 0.5A/s, 1A/s, 5A/s, 10A/s, 13A/s, 15A/s, or the like, but is not limited to the recited values, and other values not recited in the range of values are equally applicable.
Preferably, the thickness of the second copper layer is 10000 to 50000A, for example 10000A/s, 15000A/s, 20000A/s, 25000A/s, 30000A/s, or 50000A/s, but the thickness is not limited to the recited values, and other non-recited values within the range of the recited values are equally applicable.
Preferably, the temperature of the copper plating solution in the first copper layer is 30 ℃, and the plating rate is 5000-20000A/min, for example, 5000A/min, 8000A/min, 10000A/min, 13000A/min, 15000A/min, 18000A/min, 20000A/min, or the like, but not limited to the values listed, and other values not listed in the range of values are equally applicable.
Preferably, the thickness of the first copper layer in the step (2) is 35 to 80 μm, for example, 35 μm, 40 μm, 45 μm, 50 μm, 60 μm, 70 μm or 80 μm, etc., but the thickness is not limited to the recited values, and other values not recited in the range of the recited values are equally applicable.
The temperature of the nickel plating solution in the step (2) for plating the nickel layer is preferably 30 to 50 ℃, and may be, for example, 30 ℃, 35 ℃, 40 ℃, 45 ℃, 48 ℃, 50 ℃, or the like, but is not limited to the values listed, and other values not listed in the range are applicable.
The plating rate is 500 to 2000A/s, and may be, for example, 500A/s, 800A/s, 1000A/s, 1300A/s, 1500A/s, 1700A/s, 2000A/s, or the like, but is not limited to the recited values, and other non-recited values within the range of the recited values are equally applicable.
The thickness of the nickel layer in the step (2) is preferably 1 to 5 μm, and may be, for example, 1 μm, 1.5 μm, 2 μm, 3 μm, 4 μm, 4.5 μm, or 5 μm, etc., but is not limited to the values listed, and other values not listed in the range are equally applicable.
After the nickel electroplating layer is finished, surface flushing treatment is carried out to prevent the nickel plating solution from entering the gold tank to cause pollution.
Preferably, the thickness of the gold layer in the step (2) is 1 to 3 μm, for example, 1 μm, 1.5 μm, 1.8 μm, 2 μm, 2.3 μm, 2.5 μm or 3 μm, etc., but the thickness is not limited to the listed values, and other values not listed in the range of the values are equally applicable.
Preferably, the evaporation in step (2) prepares the platinum layer under the process conditions: vacuum degree higher than 2.0X10 -6 Tor may be, for example, 1.0X10 -6 Tor、8.0×10 -7 Tor、5.0×10 -7 Tor or 1.0X10 -7 Tor, etc., but is not limited to the recited values, and other values not recited in this range are equally applicable.
The evaporation temperature is 50 to 100 ℃, and may be, for example, 50 ℃, 55 ℃, 60 ℃, 70 ℃, 80 ℃, 90 ℃, or 100 ℃, but is not limited to the values listed, and other values not listed in the range are applicable.
The evaporation rate of platinum is 0.1 to 5A/s, and may be, for example, 0.1A/s, 0.3A/s, 0.5A/s, 1A/s, 2A/s, 3A/s, or 5A/s, etc., but is not limited to the recited values, and other values not recited in the range of values are equally applicable.
Preferably, in the step (3), the dual electron gun evaporates gold and the first electron gun evaporates gold and the second electron gun evaporates tin.
Preferably, the evaporation rate of the first electron gun is 3 to 15A/s, for example, 3A/s, 5A/s, 6A/s, 6.5A/s, 7A/s, 8A/s, 9A/s, 10A/s, or 15A/s, etc., but the evaporation rate is not limited to the recited values, and other values not recited in the range are equally applicable.
Preferably, the evaporation rate of the second electron gun is 3 to 15A/s, for example, 3A/s, 4A/s, 5A/s, 10A/s, 12A/s, or 15A/s, but the evaporation rate is not limited to the recited values, and other values not recited in the range are equally applicable.
According to the invention, the evaporation rate of the first electron gun is preferably 3-15A/s, the evaporation rate of the second electron gun is preferably 3-15A/s, and the weight ratio of gold to tin in the gold-tin solder layer can be changed by changing the evaporation rates of the two electron guns. When the evaporation rate of the electron gun is higher, the prepared gold-tin solder layer is poorer in compactness, the power of the electron gun is too high, and the loss of equipment is larger; when the evaporation rate of the electron gun is low, the evaporation time is long, the waste of metal materials is serious, and the surface flatness of the gold-tin solder layer is poor.
Preferably, the ratio of the evaporation rate of the first electron gun to the evaporation rate of the second electron gun is (0.7-1.7): 1, for example, 0.7:1, 0.75:1, 0.8:1, 0.9:1, 1:1, 1.5:1 or 1.7:1, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
When the ratio of the evaporation rate of the first electron gun to the evaporation rate of the second electron gun is not within the range defined by the invention, a Jin Xihan layer with the gold weight ratio of 70-80 wt% cannot be obtained. And the melting temperature of the gold-tin solder layer with the weight ratio of gold being out of the range of 70-80 wt% is higher, so that the transitional heat sink cannot well meet the packaging requirement of the semiconductor laser, and the semiconductor laser chip fails.
Preferably, the vacuum degree of the dual electron gun for simultaneously evaporating gold and tin is higher than 2.0X10 -6 Tor may be, for example, 1.0X10 -6 Tor、8.0×10 -7 Tor、5.0×10 -7 Tor or 1.0X10 -7 Tor et al, but is not limited to the recited values, and other values not recited in this range are equally applicable.
The vacuum degree of the dual electron gun for simultaneously evaporating gold and tin is higher than 2.0X10 -6 Tor, when the vacuum degree is low, can cause impurities in the gold-tin solder layer, and the purity of the gold-tin solder layer is reduced, which affects the packaging and use of the semiconductor laser.
Preferably, the weight ratio of gold in the Jin Xihan layer in the step (3) is 70-80 wt%, for example, 70wt%, 72wt%, 75wt%, 77wt%, 78wt%, 79wt%, or 80wt%, but is not limited to the recited values, and other non-recited values in the range of the values are equally applicable.
Preferably, the thickness of the Jin Xihan layer in the step (3) is 3 to 6 μm, for example, 3 μm, 3.5 μm, 4 μm, 4.5 μm, 5 μm, 5.5 μm or 6 μm, etc., but the present invention is not limited to the listed values, and other non-listed values within the range of the values are equally applicable.
The numerical ranges of the process parameters involved in preparing the metal seed layer, the first copper layer, the nickel layer, the gold layer, the platinum layer and the Jin Xihan layer in the present invention are merely examples, and may be specifically adjusted according to the production requirements.
As a preferable technical scheme of the invention, the preparation method comprises the following steps:
(1) Preparing a metal seed layer on the front and back surfaces of the substrate by adopting an electron beam evaporation method; the metal seed layer comprises a titanium layer with the thickness of 500-2000A and a second copper layer with the thickness of 10000-50000A which are sequentially arranged on the front side and the back side of the substrate;
the process conditions are as follows: vacuum degree higher than 2.0X10 -6 The Torr is that the sputtering temperature is 50-100 ℃, the sputtering rate of titanium is 0.1-5A/s, and the sputtering rate of copper is 0.1-15A/s;
(2) Sequentially electroplating a first copper layer, a nickel layer and a gold layer on the metal seed layer, and evaporating to prepare a platinum layer;
the temperature of the copper plating solution in the first copper layer is 30 ℃, and the electroplating speed is 5000-20000A/min; the thickness of the first copper layer is 35-80 mu m;
the temperature of the nickel plating solution in the nickel plating layer is 30-50 ℃, and the electroplating rate is 500-2000A/s; the thickness of the nickel layer is 1-5 mu m;
the temperature of the gold plating solution in the gold plating layer is 20-30 ℃, and the electroplating rate is 0.05-0.1 mu m/min; the thickness of the gold layer is 1-3 mu m;
the technological conditions for preparing the platinum layer by evaporation are as follows: vacuum degree higher than 2.0X10 -6 The Torr is that the evaporation temperature is 50-100 ℃, and the evaporation rate of platinum is 0.1-3A/s;
(3) Preparing a Jin Xihan layer with the weight ratio of gold 70-80 wt% and the thickness of 3-6 mu m by simultaneously evaporating gold and tin on a platinum layer by adopting a double electron gun, so as to obtain the silicon carbide packaging heat sink;
the double electron guns evaporate gold and tin simultaneously, wherein a first electron gun evaporates gold and a second electron gun evaporates tin;
the evaporation rate of the first electron gun is 3-15A/s; the evaporation rate of the second electron gun is 3-15A/s; the ratio of the evaporation rate of the first electron gun to the evaporation rate of the second electron gun ranges from (0.7 to 1.7): 1; the vacuum degree of the dual electron gun for evaporating gold and tin simultaneously is higher than 2.0X10 -6 Tor。
Compared with the prior art, the invention has at least the following beneficial effects:
the method for preparing the Jin Xihan material layer for the transitional heat sink is simple to operate, the Jin Xihan material layer for the transitional heat sink is prepared by simultaneously evaporating gold and tin by adopting the double electron gun, the gold-tin solder layer with specific gold-tin ratio is accurately prepared by controlling the evaporation rate of the gold source and the tin source, and finally the transitional heat sink formed can well meet the packaging requirement of a semiconductor laser and has wide application prospect.
Detailed Description
To facilitate understanding of the present invention, examples are set forth below. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the invention and are not to be construed as a specific limitation thereof.
The present invention will be described in further detail below. The following examples are merely illustrative of the present invention and are not intended to represent or limit the scope of the invention as defined in the claims.
Example 1
The embodiment provides a method for preparing a Jin Xihan material layer for a transitional heat sink, which comprises the following steps:
(1) Preparing a metal seed layer on the front and back surfaces of the substrate by adopting an electron beam evaporation method; the metal seed layer comprises a titanium layer with the thickness of 1300A and a second copper layer with the thickness of 36000A which are sequentially arranged on the front side and the back side of the substrate;
the process conditions are as follows: vacuum degree of 1.0X10 -6 The Torr, the sputtering temperature is 90 ℃, the sputtering rate of titanium is 3.3A/s, and the sputtering rate of copper is 11A/s;
(2) Sequentially electroplating a first copper layer, a nickel layer and a gold layer on the metal seed layer, and evaporating to prepare a platinum layer;
the temperature of the copper plating solution in the first copper layer is 30 ℃ and the plating rate is 12000A/min; the thickness of the first copper layer is 50 μm;
the temperature of the nickel plating solution in the nickel plating layer is 40 ℃, and the plating rate is 800A/s; the thickness of the nickel layer is 2.2 mu m;
the temperature of the gold plating solution in the gold plating layer is 27 ℃, and the electroplating rate is 0.06 mu m/min; the thickness of the gold layer is 1.3 mu m;
the technological conditions for preparing the platinum layer by evaporation are as follows: vacuum degree of 1.0X10 -6 The Torr, the evaporation temperature is 60 ℃, and the evaporation rate of platinum is 2.1A/s;
(3) Preparing a Jin Xihan layer with the thickness of 5 mu m by simultaneously evaporating gold and tin on the platinum layer by adopting a double electron gun to obtain the silicon carbide packaging heat sink;
the double electron guns evaporate gold and tin simultaneously, wherein the first electron gun evaporates gold, the evaporation rate of gold is 10A/s, the second electron gun evaporates tin, and the evaporation rate of tin is 8.3A/s; the vacuum degree of the dual electron gun for evaporating gold and tin simultaneously is 2.0X10 -7 Tor。
Example 2
The embodiment provides a method for preparing a Jin Xihan material layer for a transitional heat sink, which comprises the following steps:
(1) Preparing a metal seed layer on the front and back surfaces of the substrate by adopting an electron beam evaporation method; the metal seed layer comprises a titanium layer with the thickness of 2000A and a second copper layer with the thickness of 50000A which are sequentially arranged on the front side and the back side of the substrate;
the process conditions are as follows: vacuum degree of 1.0X10 -6 The Torr, the sputtering temperature is 30 ℃, the sputtering rate of titanium is 1A/s, and the sputtering rate of copper is 7A/s;
(2) Sequentially electroplating a first copper layer, a nickel layer and a gold layer on the metal seed layer, and evaporating to prepare a platinum layer;
the temperature of the copper plating solution in the first copper layer is 30 ℃, and the plating rate is 5000A/min; the thickness of the first copper layer is 48 mu m;
the temperature of the nickel plating solution in the nickel plating layer is 30 ℃, and the plating rate is 1100A/s; the thickness of the nickel layer is 1.8 mu m;
the temperature of the gold plating solution in the gold plating layer is 24 ℃, and the electroplating rate is 0.08 mu m/min; the thickness of the gold layer is 1.7 mu m;
the technological conditions for preparing the platinum layer by evaporation are as follows: vacuum degree of 1.0X10 -6 The Torr, the evaporation temperature is 90 ℃, and the evaporation rate of platinum is 0.7A/s;
(3) Preparing a Jin Xihan layer with the thickness of 4.6 mu m by simultaneously evaporating gold and tin on the platinum layer by adopting a double electron gun to obtain the silicon carbide packaging heat sink;
the double electron guns evaporate gold and tin simultaneously, wherein a first electron gun evaporates gold, the evaporation rate of gold is 7A/s, and a second electron gun evaporates tin, and the evaporation rate of tin is 6.2A/s; the vacuum degree of the dual electron gun for evaporating gold and tin simultaneously is 1.0X10 - 7 Tor。
Example 3
The embodiment provides a method for preparing a Jin Xihan material layer for a transitional heat sink, which comprises the following steps:
(1) Preparing a metal seed layer on the front and back surfaces of the substrate by adopting an electron beam evaporation method; the metal seed layer comprises a titanium layer with the thickness of 500A and a second copper layer with the thickness of 10000A which are sequentially arranged on the front side and the back side of the substrate;
the process conditions are as follows: vacuum degree of 8.0X10 -7 Tor, sputtering temperature 50 ℃, sputtering rate of titanium 0.1A/s, and sputtering rate of copper 7A/s;
(2) Sequentially electroplating a first copper layer, a nickel layer and a gold layer on the metal seed layer, and evaporating to prepare a platinum layer;
the temperature of the copper plating solution in the first copper layer is 30 ℃, and the plating rate is 20000A/min; the thickness of the first copper layer is 80 mu m;
the temperature of the nickel plating solution in the electroplated nickel layer is 38 ℃, and the electroplating rate is 1300A/s; the thickness of the nickel layer is 1 mu m;
the temperature of the gold plating solution in the gold plating layer is 22 ℃, and the electroplating rate is 0.05 mu m/min; the thickness of the gold layer is 1 mu m;
the technological conditions for preparing the platinum layer by evaporation are as follows: vacuum degree of 7.0×10 -6 The Torr, the evaporation temperature is 50 ℃, and the evaporation rate of platinum is 3A/s;
(3) Preparing a Jin Xihan material layer with the thickness of 3 mu m by simultaneously evaporating gold and tin on a platinum layer by adopting a double electron gun to obtain the silicon carbide packaging heat sink;
the double electron guns evaporate gold and tin simultaneously, wherein a first electron gun evaporates gold, the evaporation rate of gold is 5A/s, and a second electron gun evaporates tin, and the evaporation rate of tin is 3.5A/s; the vacuum degree of the dual electron gun for evaporating gold and tin simultaneously is 5.0X10 - 7 Tor。
Example 4
The embodiment provides a method for preparing a Jin Xihan material layer for a transitional heat sink, which comprises the following steps:
(1) Preparing a metal seed layer on the front and back surfaces of the substrate by adopting an electron beam evaporation method; the metal seed layer comprises a titanium layer with the thickness of 500A and a second copper layer with the thickness of 10000A which are sequentially arranged on the front side and the back side of the substrate;
the process conditions are as follows: vacuum degree of 1.0X10 -6 Tor, 100 ℃ sputtering temperature, 0.1A/s sputtering rate of titanium and 0.1A/s sputtering rate of copper;
(2) Sequentially electroplating a first copper layer, a nickel layer and a gold layer on the metal seed layer, and evaporating to prepare a platinum layer;
the temperature of the copper plating solution in the first copper layer is 30 ℃, and the plating rate is 5000A/min; the thickness of the first copper layer is 80 mu m;
the temperature of the nickel plating solution in the electroplated nickel layer is 50 ℃, and the electroplating rate is 500A/s; the thickness of the nickel layer is 5 mu m;
the temperature of the gold plating solution in the gold plating layer is 30 ℃, and the electroplating rate is 0.1 mu m/min; the thickness of the gold layer is 3 mu m;
the technological conditions for preparing the platinum layer by evaporation are as follows: vacuum degree of 1.0X10 -6 The Torr, the evaporation temperature is 100 ℃, and the evaporation rate of platinum is 3A/s;
(3) Preparing a Jin Xihan material layer with the thickness of 3 mu m by simultaneously evaporating gold and tin on a platinum layer by adopting a double electron gun to obtain the silicon carbide packaging heat sink;
the double electron guns evaporate gold and tin simultaneously, wherein a first electron gun evaporates gold, the evaporation rate of gold is 12A/s, and a second electron gun evaporates tin, and the evaporation rate of tin is 10.5A/s; the vacuum degree of the dual electron gun for simultaneously evaporating gold and tin is 7.0x10 -7 Tor。
Example 5
This example provides a method for preparing a Jin Xihan layer for a transitional heat sink, which is the same as example 1, except that the evaporation rate of the first electron gun is 1A/s and the evaporation rate of the second electron gun is 2.5A/s.
Example 6
This example provides a method for preparing a Jin Xihan layer for a transitional heat sink, which is the same as example 1, except that the evaporation rate of the first electron gun is 17A/s and the evaporation rate of the second electron gun is 7A/s.
Example 7
This example provides a method for preparing a Jin Xihan layer for a transitional heat sink, which is the same as example 1, except that the evaporation rate of the first electron gun is 3A/s and the evaporation rate of the second electron gun is 1A/s.
Example 8
This example provides a method for preparing a Jin Xihan layer for a transitional heat sink, which is the same as example 1, except that the evaporation rate of the first electron gun is 10A/s and the evaporation rate of the second electron gun is 17A/s.
The evaporation rate of the first electron gun, the evaporation rate of the second electron gun, and the weight ratio of gold in the prepared gold-tin solder layer and the melting temperature result in the above examples are shown in table 1.
From table 1, the following points can be seen:
(1) According to comprehensive examples 1-4, the method for preparing the Jin Xihan material layer for the transitional heat sink provided by the invention adopts a double electron gun to simultaneously evaporate gold and tin, the Jin Xihan material layer for the transitional heat sink with the weight ratio of gold being 70-80 wt% is prepared, the melting temperature is in a proper low temperature range, and the finally formed transitional heat sink can well meet the packaging requirement of a semiconductor laser and is suitable for large-scale popularization and application;
(2) It can be seen from the combination of examples 1 and 5-8 that the first electron gun in example 5 has a low evaporation rate of gold, and the second electron gun in example 7 has a low evaporation rate of tin, which results in long evaporation time, serious waste of metal materials, and poor surface flatness of the gold-tin solder layer; the higher gold evaporation rate of the first electron gun in example 6 and the higher tin evaporation rate of the second electron gun in example 8 both result in poor compactness of the prepared gold-tin solder layer, and the power of the electron gun is too high and the loss of equipment is relatively large. In addition, the gold evaporation rate of the first electron gun and the tin evaporation rate of the second electron gun in examples 5-8 are not within the ratio range defined by the invention, and a Jin Xihan material layer with the weight ratio of gold being 70-80 wt% cannot be obtained, and the melting temperature of the gold-tin solder material layer obtained in examples 5-8 is higher, so that the transitional heat sink cannot well meet the packaging requirement of the semiconductor laser, and the semiconductor laser chip fails.
The applicant declares that the above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that are easily conceivable within the technical scope of the present invention disclosed by the present invention fall within the scope of the present invention and the disclosure.
Claims (10)
1. A method for preparing a Jin Xihan layer for a transitional heat sink, the method comprising:
and sequentially preparing a metal seed layer, a first copper layer, a nickel layer, a gold layer and a platinum layer on the front side and the back side of the substrate, and simultaneously evaporating gold and tin by adopting a double electron gun to prepare the gold-tin solder layer for the transitional heat sink.
2. The method according to claim 1, characterized in that it comprises the steps of:
(1) Preparing a metal seed layer on the front and back surfaces of the substrate by adopting an electron beam evaporation method;
(2) Sequentially electroplating a first copper layer, a nickel layer and a gold layer on the metal seed layer, and evaporating to prepare a platinum layer;
(3) And preparing a Jin Xihan material layer by simultaneously evaporating gold and tin on the platinum layer by adopting a double electron gun to obtain the gold-tin solder layer for the transitional heat sink.
3. The method of claim 2, wherein the metal seed layer of step (1) comprises a titanium layer and a second copper layer sequentially disposed on the front and back sides of the substrate;
the thickness of the titanium layer is 500-2000A;
the thickness of the second copper layer is 10000-50000A.
4. The method of claim 2, wherein the first copper layer of step (2) has a thickness of 35-100 μm.
5. The method of claim 2, wherein the nickel layer in step (2) has a thickness of 1-5 μm.
6. The method of claim 2, wherein the gold layer in step (2) has a thickness of 1-3 μm.
7. The method of claim 2, wherein the dual electron gun of step (3) evaporates gold simultaneously with a first electron gun of gold and tin and a second electron gun of tin;
the evaporation rate of the first electron gun is 3-15A/s;
the evaporation rate of the second electron gun is 3-15A/s;
the ratio of the evaporation rate of the first electron gun to the evaporation rate of the second electron gun ranges from (0.7 to 1.7): 1;
the vacuum degree of the dual electron gun for evaporating gold and tin simultaneously is higher than 2.0X10 -6 Tor。
8. The method of claim 2, wherein the weight ratio of gold in the Jin Xihan layer in step (3) is 70-80 wt%.
9. The method of claim 2, wherein the layer Jin Xihan in step (3) has a thickness of 3-6 μm.
10. The method according to claim 2, characterized in that it comprises the steps of:
(1) Preparing a metal seed layer on the front and back surfaces of the substrate by adopting an electron beam evaporation method; the metal seed layer comprises a titanium layer with the thickness of 500-2000A and a second copper layer with the thickness of 10000-50000A which are sequentially arranged on the front side and the back side of the substrate;
(2) Sequentially electroplating a first copper layer with the thickness of 35-100 mu m, a nickel layer with the thickness of 1-5 mu m and a gold layer with the thickness of 1-3 mu m on the metal seed layer, and evaporating to prepare a platinum layer;
(3) Preparing a Jin Xihan layer with the weight ratio of 70-80 wt% and the thickness of 3-6 mu m by simultaneously evaporating gold and tin on the platinum layer by adopting a double electron gun, so as to obtain the Jin Xihan layer for the transitional heat sink;
the double electron guns evaporate gold and tin simultaneously, wherein a first electron gun evaporates gold and a second electron gun evaporates tin;
the evaporation rate of the first electron gun is 3-15A/s; the evaporation rate of the second electron gun is 3-15A/s; the ratio of the evaporation rate of the first electron gun to the evaporation rate of the second electron gun is (0.7-1.7), 1 the vacuum degree of the dual electron gun for evaporating gold and tin simultaneously is higher than 2.0X10 -6 Tor。
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