CN117637441A - Wafer cleaning method for improving surface cleanliness of wafer - Google Patents
Wafer cleaning method for improving surface cleanliness of wafer Download PDFInfo
- Publication number
- CN117637441A CN117637441A CN202311663940.4A CN202311663940A CN117637441A CN 117637441 A CN117637441 A CN 117637441A CN 202311663940 A CN202311663940 A CN 202311663940A CN 117637441 A CN117637441 A CN 117637441A
- Authority
- CN
- China
- Prior art keywords
- wafer
- cleaning
- cleanliness
- adopting
- developing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004140 cleaning Methods 0.000 title claims abstract description 55
- 230000003749 cleanliness Effects 0.000 title claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000005406 washing Methods 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 48
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 19
- 238000001179 sorption measurement Methods 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 235000009161 Espostoa lanata Nutrition 0.000 claims description 8
- 240000001624 Espostoa lanata Species 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 238000011010 flushing procedure Methods 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 27
- 239000002245 particle Substances 0.000 abstract description 12
- 239000003344 environmental pollutant Substances 0.000 abstract description 10
- 229910021645 metal ion Inorganic materials 0.000 abstract description 10
- 231100000719 pollutant Toxicity 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 6
- 230000002378 acidificating effect Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 136
- 239000004065 semiconductor Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000032683 aging Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a wafer cleaning method for improving the cleanliness of the surface of a wafer, which comprises the following steps: performing flood exposure on the surface of the wafer by adopting a flood exposure process; developing the surface of the wafer by adopting alkaline developing solution; and (5) washing the surface of the wafer by adopting a cleaning liquid. In the invention, after the surface of the wafer is exposed by a flood exposure process, the surface of the wafer is developed by adopting an alkaline developing solution and is washed by adopting a cleaning solution, so that acidic substances, particles and metal ions on the surface of the chip can be effectively removed; the problems that the surface cleanliness of the wafer is caused by pollutants such as particles, organic matters and metal ions on the surface of the wafer after the existing wet photoresist stripping and dry photoresist stripping and the reliability of chips is affected are solved, and a reliable scheme for efficiently removing the pollutants on the surface of the wafer in the chip manufacturing process is provided.
Description
Technical Field
The invention belongs to the technical field of semiconductor chip preparation, and relates to a wafer cleaning method for improving the surface cleanliness of a wafer.
Background
Semiconductor chips are generally formed by wafer fabrication, have a large number of advantages such as small volume, easy integration, and the like, and are widely used in electronic devices. For example, the semiconductor photoelectric detector chip has the advantages of small volume, high response speed, high sensitivity, easy integration with other semiconductor devices and the like, and can be widely applied to optical communication, signal processing, sensing systems and measuring systems. The semiconductor photoelectric detector has a similar chip process to a microelectronic chip, and five steps of epitaxial growth, diffusion (ion implantation), photoetching, etching and electrode manufacturing are needed. The photoetching is to expose geometric figure structure on the photoresist layer by exposure and development, and then transfer the figure on the mask plate to the substrate by etching process.
In the photolithography process of a semiconductor photodetector, the photoresist which is spun on is generally required to remove the residual photoresist after the etching process is completed, so as to prevent the influence on the subsequent process links. However, in actual mass production, after wet photoresist removal, semiconductor photodetector wafers often have lumps, particulate contaminants, and residual photoresist on the wafer surface. An improved method is that photoresist on the surface of a detector wafer is removed by adopting a mode of combining wet photoresist removal and dry photoresist removal, so that a better effect can be generated; however, some contaminants still exist on the wafer surface, which affects the yield and reliability of the chips.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to solve the technical problems that: the wafer cleaning method can effectively remove particles, organic matters, metal ions and other photoetching pollutants on the surface of the wafer and improve the cleanliness of the surface of the wafer.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a wafer cleaning method for improving the cleanliness of the surface of a wafer comprises the following steps:
s1, performing flood exposure on the surface of a wafer by adopting a flood exposure process;
s3, developing the surface of the wafer by adopting alkaline developing solution;
and S5, flushing the surface of the wafer by adopting cleaning liquid.
Further, before executing the step S3, the following steps are executed:
s2, removing organic matters on the surface of the wafer by adopting an organic solvent.
Further, the step S2 includes the following substeps:
s201, pouring acetone into an acetone culture dish;
s202, placing the wafer into an acetone culture dish for soaking for a preset time;
s203, uniformly wiping the surface of the wafer;
s204, washing the surface of the wafer by using the cleaning liquid.
Further, in the step S202, the wafer is placed in an acetone culture dish to be soaked for 5-10 min; in the step S204, the cleaning solution is deionized water, and the rinsing time is 3-5 min.
Further, after the step S204 is performed, the following steps are further performed:
s205, a piece of dust-free paper is padded at the bottom of the alcohol culture dish, and alcohol is poured in;
s206, placing the wafer into an alcohol culture dish, and uniformly wiping the surface of the wafer;
s207, washing the surface of the wafer by using the cleaning liquid.
Further, in the step S201 and the step S205, a piece of dust-free paper is pre-padded at the bottoms of the acetone culture dish and the alcohol culture dish; in the step S203 and the step S206, when the surface of the wafer is wiped, the dust-free paper at the bottom of the culture dish is fixed by using metal tweezers, and the surface of the wafer is manually wiped by using cotton balls which rotate by 360 degrees; or (b)
Transferring the wafer to an automatic wafer wiping machine, and enabling a cotton ball at the rotary head of the wafer wiping machine to gently rotate to wipe the surface of the wafer until each area of the wafer is uniformly wiped.
Further, the step S3 includes the following substeps:
s301, placing a wafer on a vacuum adsorption table of a developing machine;
s302, starting a vacuum adsorption table to adsorb the wafer in vacuum;
s303, developing the surface of the wafer by adopting a developing solution nozzle of a developing machine;
the step S5 comprises the following substeps:
s501, keeping the vacuum adsorption table open to continuously adsorb the wafer;
s502, washing the surface of the wafer by adopting a cleaning solution spray head of a developing machine;
s503, the vacuum state is removed by the vacuum adsorption table, and the wafer is taken off from the vacuum adsorption table.
Further, in the step S303, the rotation speed of the developing machine is 1000r/min to 1200r/min, the flow rate of the developing solution is 200ml/min, and the developing time is 40S to 50S.
Further, in the step S502, the cleaning solution is deionized water, the rotation speed of the developing machine is 1000 r/min-1200 r/min during the rinsing, the flow rate of the deionized water is 400ml/min, and the rinsing time is 60S-70S.
Further, the main component of the alkaline developer is tetramethyl ammonium hydroxide.
In the invention, the methods of cleaning organic matters, automatically wiping the surface of the wafer, alkaline developing solution and the like are integrated together, so that the pollutants such as particles, organic matters, metal ions and the like on the surface of the chip are effectively removed. The method realizes the effects which cannot be achieved by the conventional wet photoresist stripping and the conventional dry photoresist stripping, solves the problems that the wafer surface cleanliness caused by pollutants such as particles, organic matters, metal ions and the like still exist on the wafer surface after the conventional wet photoresist stripping and the conventional dry photoresist stripping, and influences the reliability of the chip, and provides a reliable scheme for the realization of the efficient photoresist stripping in the chip manufacturing process.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
FIG. 1 is a flowchart of a wafer cleaning method for improving the surface cleanliness of a wafer according to an embodiment of the present invention.
Fig. 2 is a flow chart for removing organics from a wafer surface using an organic solvent.
Fig. 3 is a flow chart of sequentially developing and rinsing a wafer surface.
Detailed Description
The following description of the embodiments of the invention is given by way of specific examples, the illustrations provided in the following examples merely illustrate the basic idea of the invention, and the following examples and features of the examples can be combined with one another without conflict.
Referring to fig. 1, fig. 1 is a flowchart illustrating an embodiment of a wafer cleaning method for improving the surface cleanliness of a wafer according to the present invention. Taking a photodetector wafer as an example, the wafer cleaning method for improving the cleanliness of the wafer surface according to the embodiment includes the following steps:
s1, performing flood exposure on the surface of the photoelectric detector wafer by adopting a flood exposure process. The adoption of the flood exposure process for exposure is beneficial to improving the dissolution speed of the developing solution on the residual photoresist, so that the photoresist can be removed more thoroughly. The step can adopt special flood exposure equipment, so that batch flood exposure can be carried out on a plurality of photoelectric detector wafers to improve efficiency.
S2, removing organic matters on the surface of the photoelectric detector wafer by adopting an organic solvent. The organic solvent in the implementation can be acetone and alcohol, and the acetone and the alcohol have strong dissolving action on the organic matters on the surface of the wafer, so that the effect of effectively removing the organic matters on the surface of the wafer can be achieved. This step may comprise the sub-steps of:
s201, a piece of dust-free paper is padded at the bottom of the acetone culture dish, and 150-200 mL of acetone is poured into the acetone culture dish. A piece of dust-free paper is filled at the bottom of the culture dish to prevent the wafer of the photoelectric detector from sliding, and in addition, the wafer of the photoelectric detector is convenient to wipe manually.
S202, placing the photoelectric detector wafer into an acetone culture dish for soaking for a preset time; the soaking time is generally 5-10 min.
S203, uniformly wiping the surface of the photoelectric detector wafer; the surface of the photoelectric detector wafer can be wiped manually, and an automatic wiping machine can be used for automatically wiping. During manual wiping, the dust-free paper at the bottom of the culture dish is fixed by using metal tweezers, and the surface of the photoelectric detector wafer is manually wiped by using 360-degree rotation of a cotton ball. When the automatic wiping is performed, the photoelectric detector wafer is transferred to the automatic wafer wiping machine, then the procedure is called to enable the wafer wiping machine to rotate a cotton ball to lightly rotate to wipe the surface of the photoelectric detector wafer, so that each area of the photoelectric detector wafer can be uniformly wiped, and wiping is repeated for 3-5 times. The organic matters on the surface of the photoelectric detector wafer can be dissolved more easily by rotationally wiping the photoelectric detector wafer, and particles, metal ions and certain chemical substances can be loosened in the wiping process.
S204, washing out residual acetone and organic matters dissolved by the acetone on the surface of the photoelectric detector wafer by using a cleaning liquid. The cleaning solution is generally deionized water, and the rinsing time is generally 3-5 min.
Because acetone is a toxic substance, after the photoelectric detector wafer is cleaned in the step S204, acetone still possibly remains on the surface of the photoelectric detector wafer; therefore, in order to thoroughly remove the residual acetone on the surface of the photodetector wafer, and also in order to further remove the residual organic matters on the surface of the photodetector wafer, after the step S204 is performed, the following steps may be further performed to clean the photodetector wafer:
s205, a piece of dust-free paper is padded at the bottom of the alcohol culture dish, and 150-200 mL of alcohol is poured into the alcohol culture dish.
S206, placing the photoelectric detector wafer into an alcohol culture dish, and uniformly wiping the surface of the photoelectric detector wafer. In the step, the photoelectric detector wafer does not need to be soaked specially; when the photoelectric detector wafer is manually wiped, the dust-free paper at the bottom of the culture dish can be fixed by using metal tweezers after the photoelectric detector wafer is placed, and the surface of the photoelectric detector wafer is manually wiped by using 360-degree rotation of a cotton ball. When the automatic wiping is performed, the photoelectric detector wafer is placed in the alcohol culture dish and then transferred to the automatic wafer wiping machine, and then the procedure is called to enable the wafer wiping machine to rotate a cotton ball to lightly rotate to wipe the surface of the photoelectric detector wafer, so that each area of the photoelectric detector wafer can be uniformly wiped, and wiping is repeated for 3-5 times.
S207, washing out residual alcohol and organic matters dissolved by the alcohol on the surface of the photoelectric detector wafer by using a washing liquid. The cleaning solution is generally deionized water, and the rinsing time is generally 3-5 min.
After the photoelectric detector wafer is cleaned by adopting acetone, alcohol is continuously adopted to clean the photoelectric detector wafer, so that residual organic matters on the surface of the photoelectric detector wafer can be more effectively removed, residual acetone on the surface of the photoelectric detector wafer can be thoroughly removed, the personal safety of cleaning personnel is ensured, and poisoning events are avoided.
And S3, developing the surface of the photoelectric detector wafer by adopting alkaline developing solution to remove acidic substances (such as photoresist) on the surface of the photoelectric detector wafer. In the embodiment, an acid-base neutralization principle is utilized, and an alkaline developing solution is selected to remove acidic substances on the surface of the wafer of the photoelectric detector, so that the alkaline developing solution and the acidic substances on the surface of the wafer are subjected to chemical reaction to achieve the effect of neutralization. The alkaline developer may be a developer containing tetramethylammonium hydroxide as a main component. This step may comprise the sub-steps of:
s301, placing the photoelectric detector wafer on a vacuum adsorption table of a developing machine.
S302, starting a vacuum adsorption table of the developing machine to vacuum adsorb the photoelectric detector wafer, so that the photoelectric detector wafer is fixed.
And S303, developing the surface of the photoelectric detector wafer by adopting a developing solution nozzle of a developing machine. In the step, the rotation speed of the developing machine is 1000 r/min-1200 r/min, the flow rate of the developing solution is 200ml/min, and the developing time is 40 s-50 s.
And S5, washing the surface of the photoelectric detector wafer by adopting a cleaning liquid to remove particles and metal ions on the surface of the photoelectric detector wafer. This step may comprise the sub-steps of:
s501, keeping the vacuum adsorption table of the developing machine open, and continuing to adsorb the photoelectric detector wafer.
S502, a cleaning solution spray head of a developing machine is adopted to flush the surface of the photoelectric detector wafer. The cleaning solution can be deionized water, the rotation speed of the developing machine is 1000 r/min-1200 r/min when the cleaning solution is washed, the flow rate of the deionized water is 400ml/min, and the washing time is 60 s-70 s. The particles and metal ions on the surface of the wafer of the photoelectric detector can be washed clean by deionized water sprayed out by a cleaning solution spray head of the developing machine.
And S503, after the flushing is finished, the vacuum state of the vacuum adsorption table of the developing machine is removed, and the photoelectric detector wafer is taken down from the vacuum adsorption table, so that the cleaning process of the photoelectric detector wafer is completed. Of course, in the embodiment, the photo-detector wafer is merely used for illustration, and other wafers similar to chips can be cleaned by the above method to improve the cleanliness of the wafer surface.
In order to detect the cleaning effect, in this embodiment, the removed wafer of the photodetector is placed under a metallographic microscope, and the surface of the wafer of the photodetector is observed with a 20X magnification, and the surface of the wafer of the photodetector is substantially free of pollutants such as particles (dots) and organic matters (blocks), so as to prove the effectiveness of the method of this embodiment. Under the same magnification of a metallographic microscope, the surface of the photoelectric detector wafer after the photoresist is washed and removed by adopting a conventional wet method and a conventional dry method is observed, and the surface of the photoelectric detector wafer is provided with a plurality of pollutants such as particles, organic matters and the like. By comparison, the beneficial effects obtained by this example are demonstrated.
In addition, in order to detect the improvement of the appearance and reliability of the detector chip compared with the conventional wafer cleaning method, the wafer cleaning method of the embodiment also calculates the respective appearance yield and the batch chip burn-in test result of the two wafer cleaning methods. When the appearance yield of the chip is counted, three continuous batches of photoelectric detector wafers manufactured by a conventional wet-method and dry-method photoresist stripping cleaning method are selected as a comparison group A, and the three batches of photoelectric detector wafers in the comparison group A are respectively marked as A1, A2 and A3. The continuous three batches of photo-detector wafers manufactured by the photoresist stripping and cleaning method of the embodiment are selected as a B comparison group, and the three batches of photo-detector wafers of the B comparison group are respectively marked as B1, B2 and B3. The whole wafers of each batch of photoelectric detector are split into single photoelectric detector chips and then spread on a 6-inch blue film, appearance sorting is carried out on sorting equipment through appearance detection of the photoelectric detector chips, and the appearance yield of each photoelectric detector wafer is counted, wherein the results are shown in table 1.
TABLE 1
As shown in table 1, the wafer cleaning method adopted in the present embodiment can significantly improve the yield of the appearance of the photodetector chip by about 20%.
Meanwhile, 22 photoelectric detector chips are randomly extracted from each batch of photoelectric detector wafers manufactured by two photoresist stripping cleaning methods to carry out an accelerated aging life experiment, and the aging conditions of the photoelectric detector chips are as follows: v=2×vop, t=175 ℃, t=2000 h.
Wherein V represents the chip working voltage during the aging test; vop represents the normal operating voltage of the chip; t represents the chip operating environment temperature during the burn-in test, and T represents the chip operating time during the burn-in test.
After the aging test, the number of failures of the aged photo-detector chip is counted according to the photo-detector chip parameter test standard and the qualification standard, and the results are shown in table 2.
TABLE 2
As can be seen from Table 2, the random failure phenomenon exists in the chips of the continuous three batches of photoelectric detector wafers manufactured by the conventional wet-method and dry-method photoresist stripping cleaning method, and the chips in the photoelectric detector wafers manufactured by the wafer cleaning method according to the embodiment have no chip failure in the accelerated aging life test process, so that the wafer cleaning method according to the embodiment can be illustrated that the reliability of the photoelectric detector chips can be remarkably improved.
The embodiment provides a simple and efficient method for removing pollutants on the surface of a wafer, which comprises the steps of firstly exposing the surface of the wafer through a flood exposure process, so that the dissolution rate of a developing solution on residual photoresist is improved; and then, developing the surface of the wafer by adopting alkaline developing solution to remove acidic substances on the surface of the chip, and washing by adopting deionized water to remove particles and metal ions on the surface of the wafer. In addition, the organic matters on the surface of the wafer can be removed by wiping the surface of the wafer with acetone and alcohol, so that pollutants which cannot be removed by the conventional photoresist removing method can be realized; the problems that the surface cleanliness of the wafer is caused by pollutants such as particles, organic matters, metal ions and the like on the surface of the wafer after the existing wet photoresist stripping and the existing dry photoresist stripping are solved, and the reliability of chips is affected.
Finally, it is noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the present invention, which is intended to be covered by the claims of the present invention.
Claims (10)
1. The wafer cleaning method for improving the cleanliness of the surface of the wafer is characterized by comprising the following steps of:
s1, performing flood exposure on the surface of a wafer by adopting a flood exposure process;
s3, developing the surface of the wafer by adopting alkaline developing solution;
and S5, flushing the surface of the wafer by adopting cleaning liquid.
2. The method for cleaning a wafer with increased cleanliness of a wafer surface according to claim 1, wherein the following steps are performed before the step S3 is performed:
s2, removing organic matters on the surface of the wafer by adopting an organic solvent.
3. The method for cleaning a wafer with increased cleanliness of a surface of the wafer as recited in claim 2, wherein the step S2 comprises the substeps of:
s201, pouring acetone into an acetone culture dish;
s202, placing the wafer into an acetone culture dish for soaking for a preset time;
s203, uniformly wiping the surface of the wafer;
s204, washing the surface of the wafer by using the cleaning liquid.
4. A method of cleaning a wafer to increase the cleanliness of a surface of the wafer as recited in claim 3, wherein: in the step S202, the wafer is placed in an acetone culture dish to be soaked for 5-10 min; in the step S204, the cleaning solution is deionized water, and the rinsing time is 3-5 min.
5. The method for cleaning a wafer with increased cleanliness as recited in claim 3, further comprising, after said step S204 is performed, the steps of:
s205, a piece of dust-free paper is padded at the bottom of the alcohol culture dish, and alcohol is poured in;
s206, placing the wafer into an alcohol culture dish, and uniformly wiping the surface of the wafer;
s207, washing the surface of the wafer by using the cleaning liquid.
6. The method for cleaning a wafer with improved wafer surface cleanliness as recited in claim 5, wherein: in the step S201 and the step S205, a piece of dust-free paper is pre-padded at the bottoms of the acetone culture dish and the alcohol culture dish; in the step S203 and the step S206, when the surface of the wafer is wiped, the dust-free paper at the bottom of the culture dish is fixed by using metal tweezers, and the surface of the wafer is manually wiped by using cotton balls which rotate by 360 degrees; or (b)
Transferring the wafer to an automatic wafer wiping machine, and enabling a cotton ball at the rotary head of the wafer wiping machine to gently rotate to wipe the surface of the wafer until each area of the wafer is uniformly wiped.
7. The wafer cleaning method for improving the cleanliness of a wafer surface according to any one of claims 1 to 6, wherein: the step S3 comprises the following substeps:
s301, placing a wafer on a vacuum adsorption table of a developing machine;
s302, starting a vacuum adsorption table to adsorb the wafer in vacuum;
s303, developing the surface of the wafer by adopting a developing solution nozzle of a developing machine;
the step S5 comprises the following substeps:
s501, keeping the vacuum adsorption table open to continuously adsorb the wafer;
s502, washing the surface of the wafer by adopting a cleaning solution spray head of a developing machine;
s503, the vacuum state is removed by the vacuum adsorption table, and the wafer is taken off from the vacuum adsorption table.
8. The method for cleaning a wafer with improved wafer surface cleanliness as recited in claim 7, wherein: in the step S303, the rotation speed of the developing machine is 1000 r/min-1200 r/min, the flow rate of the developing solution is 200ml/min, and the developing time is 40S-50S.
9. The method for cleaning a wafer with improved wafer surface cleanliness as recited in claim 7, wherein: in the step S502, the cleaning liquid is deionized water, the rotation speed of the developing machine is 1000 r/min-1200 r/min during flushing, the flow rate of the deionized water is 400ml/min, and the flushing time is 60S-70S.
10. The method for cleaning a wafer to improve the cleanliness of the surface of the wafer as claimed in claim 1, wherein: the main component of the alkaline developer is tetramethyl ammonium hydroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311663940.4A CN117637441A (en) | 2023-12-06 | 2023-12-06 | Wafer cleaning method for improving surface cleanliness of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311663940.4A CN117637441A (en) | 2023-12-06 | 2023-12-06 | Wafer cleaning method for improving surface cleanliness of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117637441A true CN117637441A (en) | 2024-03-01 |
Family
ID=90031855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311663940.4A Pending CN117637441A (en) | 2023-12-06 | 2023-12-06 | Wafer cleaning method for improving surface cleanliness of wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117637441A (en) |
-
2023
- 2023-12-06 CN CN202311663940.4A patent/CN117637441A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4817579B2 (en) | Defect reduction method | |
| CN101281379A (en) | Method for removing photoresist as well as method for reworking of photoetching technology | |
| US20070269990A1 (en) | Method of removing ion implanted photoresist | |
| US6210846B1 (en) | Exposure during rework for enhanced resist removal | |
| JP2015032735A (en) | Washing method of semiconductor substrate and washing station of semiconductor substrate | |
| US5785875A (en) | Photoresist removal process using heated solvent vapor | |
| KR20060086039A (en) | Photoresist stripping composition and methods of fabricating semiconductor device having photoresist removing process using the same | |
| CN108615673A (en) | Semiconductor surface processing method in a kind of photoetching process of rework | |
| US7678751B2 (en) | Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same | |
| CN117637441A (en) | Wafer cleaning method for improving surface cleanliness of wafer | |
| CN103197514A (en) | Developing method capable of effectively reducing defect of pore development | |
| JPH07115081A (en) | Treatment apparatus | |
| US7781140B2 (en) | Method of fine pitch bump stripping | |
| JP2002100599A (en) | Washing method for silicon wafer | |
| JPH03215867A (en) | Developing processing method for positive resist | |
| JP2760735B2 (en) | Particle inspection equipment for semiconductor wafers | |
| JPH0246464A (en) | Developing method | |
| CN108878254B (en) | Semiconductor device and method for cleaning photoresist pattern | |
| US8338082B2 (en) | DI water rinse of photoresists with insoluble dye content | |
| JPH0927469A (en) | Semiconductor device manufacturing method | |
| KR20010085421A (en) | Resist Development Method | |
| JP2008244323A (en) | Stencil mask | |
| JPH02309637A (en) | Cleaning method for semiconductor wafer | |
| JP2596212B2 (en) | Wet processing equipment for semiconductor devices | |
| US20020086242A1 (en) | Novel low defect developer rinse process for 0.15 micron cmos technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |