CN117626408A - Thermal field structure and device for growing crystals by guided mode method - Google Patents
Thermal field structure and device for growing crystals by guided mode method Download PDFInfo
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- CN117626408A CN117626408A CN202311436741.XA CN202311436741A CN117626408A CN 117626408 A CN117626408 A CN 117626408A CN 202311436741 A CN202311436741 A CN 202311436741A CN 117626408 A CN117626408 A CN 117626408A
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- 239000013078 crystal Substances 0.000 title claims abstract description 94
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- 230000008569 process Effects 0.000 claims abstract description 20
- 238000009413 insulation Methods 0.000 claims abstract description 19
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 62
- 239000012212 insulator Substances 0.000 claims description 36
- 230000006698 induction Effects 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 229920000742 Cotton Polymers 0.000 claims description 9
- 239000011449 brick Substances 0.000 claims description 9
- 239000004576 sand Substances 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 239000000835 fiber Substances 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 abstract description 52
- 229910001195 gallium oxide Inorganic materials 0.000 abstract description 52
- 230000008021 deposition Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 description 13
- 239000002994 raw material Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 4
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- 229910052741 iridium Inorganic materials 0.000 description 3
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- 239000007788 liquid Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
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- 230000001174 ascending effect Effects 0.000 description 1
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- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a thermal field structure and a device for growing crystals by a guided mode method, and relates to the technical field of artificial crystals. The thermal field structure comprises: first thermal insulation body, first thermal insulation body includes: the first through hole is arranged on the central shaft of the first heat preservation body; the second through holes are symmetrically arranged on the side wall of the first heat insulation body in pairs, and the first through holes are communicated with the second through holes; the cover body is arranged outside the first heat preservation body, and gaps are formed between the periphery and the top of the first heat preservation body and the cover body; the side wall of the cover body is provided with a transparent observation window for observing the growth of gallium oxide crystals through a plurality of second through holes. The thermal field structure can effectively guide the trend of the hot air flow, stable hot air flow from top to bottom can be formed in the gaps between the periphery of the first heat insulation body and the cover body, meanwhile, the hot air flow from outside to inside can be formed in the second through hole, deposition of volatile matters on the observation window can be effectively inhibited, and a technician can observe the crystal growth process.
Description
Technical Field
The invention relates to the technical field of artificial crystals, in particular to a thermal field structure and a device for growing crystals by a guided mode method.
Background
Currently, methods for growing crystals include a guided mode method, a crucible lowering method, and the like. The guided mode method is a growth method in which a molten liquid is transported to the top of a mold by capillary action by the mold to grow crystals. And melting the crystal raw material in the crucible into a melt by heating, placing the mold in the crucible, and conveying the melt to the top of the mold by capillary action of the mold and storing the melt in a capillary gap. At this time, the seed crystal slowly descends and contacts with the upper surface of the die to slightly melt the seed crystal, a thin liquid film is formed between the seed crystal and the die, and then the seed crystal is pulled up through variable speed to enable the liquid film to be continuously solidified to form single crystals, and the shape of the crystals is determined by the shape of the die.
However, there are difficulties in growing crystals (e.g., gallium oxide crystals, etc.) by the guided mode method. Gallium oxide growth temperature is high, and the volatile matter is serious in the growth process, and the air current direction in the thermal field structure in prior art is from heat-generating body crucible top flow direction observation window, therefore, the volatile matter can deposit on the observation window, and the volatile matter shelters from the observation window and makes the crystal growth process be difficult for the technician to observe, leads to the crystal growth uncontrollable.
Accordingly, the prior art is still in need of improvement and development.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide a thermal field structure and a device for growing crystals by a guided mode method, which aims to solve the problem that volatiles in the existing thermal field structure are deposited on an observation window, so that a technician cannot easily observe the crystal growth process, and the crystal growth is uncontrollable.
The technical scheme of the invention is as follows:
in a first aspect of the present invention, there is provided a thermal field structure for growing crystals by a guided mode method, comprising:
a first thermal insulator, the first thermal insulator comprising:
the first through hole is arranged on the central shaft of the first heat preservation body;
the second through holes are symmetrically arranged on the side wall of the first heat preservation body in pairs, and the first through holes are communicated with the second through holes;
the cover body is arranged outside the first heat preservation body in a covering way, and gaps are formed between the periphery and the top of the first heat preservation body and the cover body; and a transparent observation window is arranged on the side wall of the cover body and used for observing the growth of crystals through the plurality of second through holes.
Optionally, an included angle between the central axis direction of the second through hole and the horizontal direction is less than or equal to 20 °.
Optionally, a gap between the periphery of the first heat preservation body and the side wall of the cover body is 3-5cm.
Optionally, a gap between the top of the first heat-preserving body and the top wall of the cover body is 2-5cm.
Optionally, the side wall of the cover body is made of quartz or glass, and the top wall of the cover body is made of at least one of alumina, zirconia and quartz; a third through hole is formed in the center of the top wall of the cover body.
Optionally, the material of the first heat insulator is at least one of zirconia and alumina; and/or the number of the groups of groups,
the first heat preservation body is a cylindrical first heat preservation body, and a second through hole is formed in the circumferential direction of the cylindrical first heat preservation body at intervals of 180 degrees, 90 degrees or 60 degrees.
In a second aspect of the present invention, there is provided an apparatus for growing crystals by a guided mode method, comprising:
a lower thermal field structure;
the upper thermal field structure is arranged on the lower thermal field structure; the upper thermal field structure is the thermal field structure disclosed by the invention;
the lifting mechanism comprises a lifting rod, the lifting rod is located in the first through hole of the thermal field structure, and one end of the lifting rod is used for installing seed crystals.
Alternatively, the process may be carried out in a single-stage,
the lower thermal field structure comprises:
a second heat insulator;
the induction coil is arranged outside the second heat insulation body in a surrounding way;
the crucible is arranged in the second heat insulating body, a die is arranged in the crucible, and the central axis of the crucible coincides with the central axis of the first through hole.
Optionally, the second heat insulator includes:
the first heat preservation layer is arranged at the lower part of the crucible;
the second heat preservation layer is arranged outside the crucible in a surrounding way;
zirconium sand is filled between the second heat insulation layer and the crucible.
Optionally, the second heat insulator further includes:
the third heat preservation layer is arranged at the lower part of the first heat preservation layer;
a zirconia cotton layer arranged on the zirconia sand;
and the zirconia fiber brick layer is arranged on the zirconia cotton layer.
The beneficial effects are that: the thermal field structure in the invention can effectively guide the trend of the hot air flow, stable hot air flow from top to bottom can be formed in the gaps between the periphery of the first heat insulation body and the cover body, meanwhile, hot air flow from outside to inside can be formed in the second through hole, the deposition of volatile matters on the observation window is effectively inhibited in the crystal growth process, the problem that the technical personnel are difficult to observe the crystal growth process due to the deposition of the volatile matters on the observation window along with the hot air flow when the crystal is grown is effectively avoided, so that the crystal growth is controllable, and corresponding adjustment can be made at any time according to the observed crystal growth condition.
Drawings
FIG. 1 is a schematic cross-sectional view of an apparatus for growing crystals by the guided-mode method according to an embodiment of the present invention.
Fig. 2 is a graph showing the simulation results of the temperature field when gallium oxide crystals are grown by using a device for growing crystals by a guided-mode method according to the prior art.
FIG. 3 is a graph showing the simulation results of the temperature field when gallium oxide crystals are grown by the apparatus described in example 1 of the present invention.
Reference numerals in the drawings illustrate:
1. a first heat-retaining body; 11. a first through hole; 12. a second through hole; 2. a cover body; 21. a side wall of the cover body; 22. a top wall of the cover body; 221. a transparent viewing window; 222. a third through hole; 3. a lifting rod; 4. a second heat insulator; 41. a first heat-retaining layer; 411. an alumina support; 42. a second heat-insulating layer; 43. zirconium sand; 44. a third heat-insulating layer; 45. a zirconia cotton layer; 46. a zirconia fiber brick layer; 5. an induction coil; 6. a crucible; 61. a mold; 7. a gallium oxide seed crystal; 8. a gallium oxide melt; 9. gallium oxide single crystal.
Detailed Description
The invention provides a thermal field structure and a device for growing crystals by a guided mode method, which are used for making the purposes, technical schemes and effects of the invention clearer and more definite, and are further described in detail below. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
The terms such as "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature "above," "over" and "on" a second feature may be a first feature directly above or obliquely above the second feature, or simply indicate that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
When an element is referred to as being "fixed" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
If there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
In addition, it should be noted that, the technical solutions of the embodiments of the present invention may be combined with each other, but it is necessary to be based on the fact that those skilled in the art can implement the embodiments, and when the technical solutions are inconsistent or cannot be implemented, it should be considered that the combination of the technical solutions does not exist, and is not within the scope of protection required by the present invention.
Gallium oxide (Ga) 2 O 3 ) As a representative of the fourth-generation semiconductor, the semiconductor has the advantages of high efficiency, energy saving and the like. Gallium oxide has excellent material properties compared with the mainstream silicon-based power device, and has energy saving efficiency 3400 times that of silicon (Si) and 10 times that of silicon carbide (SiC). Gallium oxide is the only material which can be grown by a melt method (such as a guided mode method) in the wide-bandgap semiconductor materials, and therefore, the gallium oxide is a substrate material with extremely low cost potential in the future. Thus, the present invention is described with respect to growing gallium oxide crystals, although the thermal field structure and apparatus of the present application are applicable to other crystals that may be grown using guided mode methods.
An embodiment of the present invention provides a thermal field structure for growing crystals by a guided mode method, wherein the thermal field structure, as shown in fig. 1 (upper half), includes:
a first heat insulator 1, the first heat insulator 1 comprising:
a first through hole 11 provided on a central axis of the first heat insulator 1;
the plurality of second through holes 12 are symmetrically arranged on the side wall of the first heat preservation body in pairs, and the first through holes 11 are communicated with the plurality of second through holes 12;
the cover body 2 is covered outside the first heat-insulating body 1, and gaps are formed between the periphery and the top of the first heat-insulating body 1 and the cover body 2; a transparent observation window 221 is provided on the sidewall 21 of the cover body, for observing the growth of gallium oxide crystals through the plurality of second through holes 12.
In the embodiment of the invention, the gaps between the top and the cover body and the periphery of the first heat insulation body in the thermal field structure, as well as the first through hole and the second through hole (not only having an observation function, but also an important air flow channel) in the first heat insulation body can form an air flow channel, so that the upward flow of hot air flow at the lower part of the first through hole can be realized, negative pressure is generated here, then the hot air flow flows between the upper part of the first through hole and the top of the cover body, and positive pressure is generated here, so that the hot air flow can pass through the gaps between the top of the first heat insulation body and the cover body, then respectively flow downwards into the gaps between the periphery of the first heat insulation body and the cover body, continue to flow downwards, finally flow back to the lower part of the first through hole through a plurality of second through holes, and fill the negative pressure at the lower part of the first through hole, thereby forming a cycle. That is, the thermal field structure in the embodiment of the invention can effectively guide the trend of the hot air flow, stable hot air flow from top to bottom can be formed in the gaps between the periphery of the first heat insulation body and the cover body, meanwhile, hot air flow from outside to inside can be formed in the second through hole (instead of hot air flow from inside to outside, the hot air flow from inside to outside in the prior art can cause volatile matters in the hot air flow to be deposited on the observation window), the deposition of the volatile matters on the observation window is effectively inhibited in the gallium oxide crystal growth process, and the problem that the volatile matters are deposited on the observation window along with the hot air flow to cause technicians to be difficult to observe the gallium oxide crystal growth process is effectively avoided when gallium oxide crystals are grown, so that the gallium oxide crystal growth is controllable, and corresponding adjustment is made at any time according to the observed gallium oxide crystal growth condition. The thermal field of the embodiment of the invention has a simple structure, and on the premise of not introducing other structures, the aim of inhibiting the deposition of volatile matters on the observation window is realized by designing the structure of the thermal field. The embodiment of the invention provides an important way for large-scale growth of high-quality gallium oxide single crystals.
In addition, the thermal field is unstable due to the influence of asymmetric factors, and particularly, as shown in fig. 2, the thermal field is asymmetric left and right when the gallium oxide crystal is grown by the device for growing the crystal by the guided mode method in the prior art, and the formed vortex is unstable, so that the angle in the shouldering process of the gallium oxide crystal growth by the guided mode method is asymmetric, one side of the gallium oxide crystal is shouldered in the shouldering process, the other side of the gallium oxide crystal is not shouldered, the waste of raw materials is caused, the growth time is prolonged, and the growth efficiency is reduced. Therefore, by designing a reasonable temperature field structure, the maintenance of the stability of the air flow is particularly important for controlling the crystal growth. At present, the temperature gradient in the shouldering process is regulated in a mode of directly blowing external air flow, the air flow field structure is regulated, and the symmetry and stability of temperature fields at the left side and the right side are ensured. However, the temperature gradient in the shouldering process is adjusted by directly blowing external air flow, so that the temperature gradient is overlarge, and mixed crystals can be formed in the crystal growth process. In the embodiment of the invention, the second through hole is internally provided with stable air flow from outside to inside, the air flow from outside to inside reduces the temperature gradient of the shoulder of the gallium oxide crystal, and enhances the growth power. In addition, the flow field of the air flow is formed inside the thermal field structure, supercooled air flow outside the thermal field structure is not introduced, the air flow circulates inside the thermal field structure, the temperature difference is not too large, and the problem of forming mixed crystals due to the too large temperature difference is avoided.
In this embodiment, the side wall of the cover body is provided with a transparent observation window, that is, the side wall of the cover body includes an observation window area (transparent) and a non-observation window area (transparent or opaque; when the non-observation window area is transparent, the whole side wall of the cover body may be made of a transparent material).
In some embodiments, the transparent viewing window is located in a projection area of the plurality of second through holes on a side wall of the cover along a central axis direction thereof. In this way, the growth of gallium oxide crystals can be effectively observed through the second through holes.
In some embodiments, an angle α between a central axis direction of the second through hole and the horizontal direction is 20 ° or less. Therefore, the negative pressure at the lower part of the first through hole can be supplemented by the hot air flow in the second through hole more effectively, the hot air flow from outside to inside is formed in the second through hole, and the deposition of volatile matters on the observation window is restrained.
In some specific embodiments, as shown in fig. 1, the angle α between the central axis direction of the second through hole and the horizontal direction is greater than 0 ° and less than or equal to 20 °
In some embodiments, as shown in fig. 1, the gap d1 between the periphery of the first heat-insulating body 1 and the side wall 21 of the cover is 3-5cm, that is, the linear distance between the periphery of the first heat-insulating body and the side wall of the cover is 3-5cm. The gap with the size is used as an airflow channel, so that the formation of a hot airflow from top to bottom can be ensured. By way of example, the gap d1 is 3cn, 3.5cm, 4cm, 4.5cm, 5cm, or the like.
In some embodiments, as shown in fig. 1, the gap d2 between the top of the first heat insulator 1 and the top wall 22 of the cover is 2-5cm, that is, the linear distance between the top of the first heat insulator and the top wall of the cover is 2-5cm. The air flow from the bottom of the first through hole to the top of the first through hole is guided to flow into the air flow channel between the periphery of the first heat-preserving body and the side wall of the cover body. By way of example, the gap d2 is 2cm, 2.5cm, 3cm, 3.5cm, 4cm, 4.5cm, 5cm, or the like.
In some embodiments, the side wall of the cover is made of quartz or glass, and the top wall of the cover is made of at least one of alumina, zirconia and quartz (specifically, high-purity quartz); a third through hole 222 is provided at the center of the top wall of the cover.
In some embodiments, the material of the first heat insulator is at least one of zirconia and zirconia, but not limited thereto.
The present invention is not limited to the cross-sectional shapes of the first through hole and the second through hole, and may be circular holes or square holes. For example, the cross-sectional shapes of the first through hole and the second through hole are round holes, the diameters of the first through hole and the second through hole can be set according to actual needs, for example, the diameter of the first through hole is 10 cm to 15cm, and the diameter of the second through hole is 3cm.
In the embodiment of the invention, the number of the second through holes is at least two, and the two second through holes are symmetrically arranged.
In some embodiments, the first heat insulator is a cylindrical first heat insulator, and in the circumferential direction of the cylindrical first heat insulator, one second through hole is arranged every 180 ° and at this time, the number of the second through holes is two. Of course, the number of the second through holes may be four at intervals of 90 °, or may be six at intervals of 60 °.
In some embodiments, the thermal field structure is a symmetrical structure with the central axis of the first thermal insulator as the symmetry axis.
The embodiment of the invention also provides a device for growing crystals by a guided mode method, as shown in fig. 1, which comprises:
a lower thermal field structure;
the upper thermal field structure is arranged on the lower thermal field structure; the upper thermal field structure is the thermal field structure described above in the embodiment of the invention;
the lifting mechanism comprises a lifting rod 3, wherein the lifting rod 3 is positioned in a first through hole 11 of the thermal field structure, one end of the lifting rod 3 is used for installing a seed crystal 7, the other end of the lifting rod passes through a third through hole 222 (the lifting rod is positioned on the central axis of the first through hole) at the central position of the top wall of the cover body, and the size of the third through hole just allows the lifting rod to pass through so as to avoid the internal airflow to flow outside the thermal field structure as far as possible.
In this embodiment, the height of the upper thermal field structure may be set according to actual needs. When the thermal field structure disclosed by the embodiment of the invention is used as the upper thermal field structure for gallium oxide crystal growth, volatile matters can be restrained from being deposited on the observation window, and the growth condition of the gallium oxide crystal can be observed in real time. Meanwhile, the thermal field structure can form a stable thermal field, so that shoulder placing is guaranteed to be carried out at the left and right sides simultaneously, and the quality of gallium oxide crystals is improved. The upper thermal field structure (the upper half in fig. 1, i.e., the thermal field structure in the above embodiment) and the lower thermal field structure (the lower half in fig. 1) in the embodiment of the present invention are both axisymmetric structures.
In some embodiments, the lower thermal field structure comprises:
a second heat insulator 4;
the induction coil 5 is arranged outside the second heat insulation body 4 in a surrounding manner;
the crucible 6 is arranged in the second heat insulating body 4, a die 61 is arranged in the crucible 6, and the central axis of the crucible 6 coincides with the central axis of the first through hole 11.
In this embodiment, the shape of the mold may be set according to the shape of the gallium oxide crystal to be formed.
When gallium oxide crystal growth is carried out, gallium oxide raw materials are placed in a crucible 6, a die 61 is installed, then gallium oxide seed crystals 7 are installed at the end part of a lifting rod 3, the crucible 6 is heated under the electromagnetic induction action of an induction coil 5, heat on the crucible 6 is transferred to the die 61 and the gallium oxide raw materials, the gallium oxide raw materials are melted to form a gallium oxide melt 8, the gallium oxide seed crystals 7 on the lifting rod 3 are contacted with the die 61, and crystal seeding is carried out through the gallium oxide seed crystals 7, so that high-quality gallium oxide single crystals 9 are pulled out.
When gallium oxide crystal growth is carried out, the heated upper part of the crucible is provided with ascending hot air flow, the hot air flow continuously flows upwards along the first through hole by the thermal field structure in the embodiment of the invention, at the moment, the upper part of the crucible generates negative pressure, then flows between the upper part of the first through hole and the top of the cover body, and positive pressure is adopted here, so that the hot air flow can pass through a gap between the top of the first heat preservation body and the cover body, then downwards flows into the gap between the periphery of the first heat preservation body and the cover body, continuously downwards flows, finally flows back to the upper part of the crucible through a plurality of second through holes, and the negative pressure of the upper part of the crucible is filled. That is, the thermal field structure in the embodiment of the invention can effectively guide the trend of the hot air flow, stable hot air flow from top to bottom can be formed in the gaps between the periphery of the first heat insulation body and the side wall of the cover body, meanwhile, the hot air flow from outside to inside can be formed in the second through hole, the deposition of volatile matters on the observation window is effectively inhibited in the growth process of gallium oxide crystals, and the problem that the growth process of gallium oxide crystals is difficult to observe by technicians due to the fact that the volatile matters are deposited on the observation window along with the hot air flow when the gallium oxide crystals are grown is effectively avoided, so that the growth of gallium oxide crystals is controllable, and corresponding adjustment is made at any time according to the observed growth condition of gallium oxide crystals. The thermal field of the embodiment of the invention has a simple structure, and on the premise of not introducing other structures, the aim of inhibiting the deposition of volatile matters on the observation window is realized by designing the structure of the thermal field. The embodiment of the invention provides an important way for large-scale growth of high-quality gallium oxide single crystals.
In addition, in the embodiment of the invention, stable air flow from outside to inside is formed in the second through hole, the air flow from outside to inside reduces the temperature gradient of the shoulder of the gallium oxide crystal, and enhances the growth power. In addition, the flow field of the air flow is formed inside the thermal field structure, supercooled air flow outside the thermal field structure is not introduced, the air flow circulates inside the thermal field structure, the temperature difference is not too large, and the problem of forming mixed crystals due to the too large temperature difference is avoided.
In some embodiments, the induction coil is made of copper pipe, and the induction coil generates an induction magnetic field through medium-frequency alternating current, and the changed magnetic field enables the induction current to be generated in the crucible for heating.
In some embodiments, the crucible is one of an iridium crucible, a platinum rhodium crucible, and a tungsten molybdenum crucible, but is not limited thereto. These crucibles are used as heating elements, and can satisfactorily heat the crucible by an induction coil.
In some embodiments, as shown in fig. 1, the second heat insulator 4 includes:
a first heat-retaining layer 41 provided at a lower portion of the crucible 6;
the second heat-insulating layer 42 is arranged outside the crucible 6 in a surrounding manner;
zirconium sand 43 is filled between the second insulating layer 42 and the crucible 6.
In some embodiments, the material of the first thermal insulation layer is zirconia, specifically zirconia thermal insulation bricks, and the material of the second thermal insulation layer is zirconia.
Specifically, the first heat-insulating layer 41 includes a first upper heat-insulating layer, a first lower heat-insulating layer, and an alumina supporter 411 disposed between the first upper heat-insulating layer and the first lower heat-insulating layer.
In this embodiment, the second insulator of the structure may provide a stable temperature field environment.
In some embodiments, the second thermal insulator 4 further comprises:
a third heat-insulating layer 44 disposed at the lower portion of the first heat-insulating layer 41;
a zirconia cotton layer 45 disposed on the zirconia sand 43;
a zirconia fiber brick layer 46 is provided on the zirconia cotton layer 45.
In this embodiment, the height position of the crucible in the induction coil is adjusted by adjusting the thickness of the third insulating layer. In some specific embodiments, the material of the third insulating layer is alumina insulating brick.
The following is a detailed description of specific examples.
Example 1
The embodiment provides a device for growing crystals by a guided mode method, which has an axisymmetric structure (the axial direction is the vertical direction), as shown in fig. 1, and comprises:
a lower thermal field structure;
an upper thermal field structure with a height of 60cm is arranged on the lower thermal field structure.
Wherein, the upper thermal field structure includes:
a first heat insulator 1 (zirconia) and the first heat insulator 1 comprises:
a first through hole 11 provided on a central axis of the first heat insulator 1; the first through hole is a round hole with the diameter of 15cm;
four second through holes 12 are symmetrically arranged on the side wall of the first heat preservation body 1 in pairs, and the first through holes are communicated with the four second through holes; the first heat preservation body is a cylindrical first heat preservation body with the diameter of 46cm, and a second through hole is formed in the circumferential direction of the cylindrical first heat preservation body at intervals of 90 degrees; the second through hole is a round hole, and the diameter of the second through hole is 3cm;
the cover body 2 is covered outside the first heat-insulating body 1, and gaps are formed between the periphery and the top of the first heat-insulating body 1 and the cover body 2; the side wall 21 of the cover body is made of quartz (transparent), and a transparent observation window 221 is arranged on the side wall 21 of the cover body, so that the growth of gallium oxide crystals can be observed through the plurality of second through holes; the top wall 22 of the cover body is made of alumina, and a third through hole 222 is arranged at the center of the top wall 22 of the cover body;
an included angle α=20° between the central axis direction of the second through hole 12 and the horizontal direction;
the gap d1 between the periphery of the first heat preservation body 1 and the side wall 21 of the cover body is 3cm;
a gap d2 between the top of the first heat insulator 1 and the top wall 22 of the cover body is 2cm;
the lower thermal field structure comprises:
a second heat insulator 4;
an induction coil 5 (made of copper pipe) arranged outside the second heat insulating body 4 in a surrounding manner;
a crucible 6 (iridium material) disposed in the second heat insulator 4, wherein a mold 61 (iridium material) is mounted in the crucible 6, and a central axis of the crucible 6 coincides with a central axis of the first through hole 11;
the second heat insulator 4 includes:
the crucible 6 is arranged on the first heat-insulating layer 41, and the first heat-insulating layer is made of zirconia heat-insulating bricks;
the second heat-insulating layer 42 is arranged outside the crucible 6 in a surrounding manner, and the material of the second heat-insulating layer is zirconia;
zirconium sand 43 filled between the second insulating layer 42 and the crucible 6;
the third heat-insulating layer 44 is arranged at the lower part of the first heat-insulating layer 41, and the material of the third heat-insulating layer is alumina heat-insulating bricks;
a zirconia cotton layer 45 disposed on the zirconia sand 43;
a zirconia fiber brick layer 46 is provided on the zirconia cotton layer 45.
The device for growing crystals by the guided mode method further comprises:
the lifting mechanism comprises a lifting rod 3, wherein the lifting rod 3 is positioned on the central axis of the first through hole 11 of the upper thermal field structure, one end of the lifting rod is used for installing seed crystals 7, and the other end of the lifting rod penetrates through a third through hole 222 at the central position of the top wall 22 of the cover body.
As shown in fig. 3, the thermal field structure in the device of the embodiment can effectively guide the trend of the air flow to form a stable flow field, i.e. a stable bilateral symmetry temperature field, and the stability of the temperature field can realize symmetry control in the shouldering process. Because the upper part of the crucible ascends, stable top-down airflow is formed in the gap between the side wall of the cover body and the periphery of the first heat preservation body. Meanwhile, the second through hole is internally and stably provided with an air flow (from the side wall direction of the cover body to the direction of the first through hole) from outside to inside, so that the deposition of volatile matters in the observation window can be effectively reduced, and the observation control in the gallium oxide crystal growth process is facilitated. In addition, the gas flow from outside to inside also reduces the temperature gradient of the gallium oxide crystal shoulder and enhances the growth dynamics. The device provided by the embodiment can realize observation in the gallium oxide crystal growth process, and can form a bilateral symmetry temperature field to grow high-quality gallium oxide single crystals.
It is to be understood that the invention is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
Claims (10)
1. A thermal field structure for growing crystals by a guided mode method, comprising:
a first thermal insulator, the first thermal insulator comprising:
the first through hole is arranged on the central shaft of the first heat preservation body;
the second through holes are symmetrically arranged on the side wall of the first heat preservation body in pairs, and the first through holes are communicated with the second through holes;
the cover body is arranged outside the first heat preservation body in a covering way, and gaps are formed between the periphery and the top of the first heat preservation body and the cover body; and a transparent observation window is arranged on the side wall of the cover body and used for observing the growth of crystals through the plurality of second through holes.
2. The thermal field structure of claim 1, wherein an included angle between a central axis direction of the second through hole and a horizontal direction is 20 ° or less.
3. The thermal field structure of claim 1, wherein a gap between the periphery of the first thermal insulator and the side wall of the cover is 3-5cm.
4. The thermal field structure of claim 1, wherein a gap between a top of the first thermal insulator and a top wall of the cover is 2-5cm.
5. The thermal field structure according to claim 1, wherein the sidewall of the cover is made of quartz or glass, and the top wall of the cover is made of at least one of alumina, zirconia, and quartz; a third through hole is formed in the center of the top wall of the cover body.
6. The thermal field structure according to claim 1, wherein the first heat insulator is made of at least one of zirconia and alumina; and/or the number of the groups of groups,
the first heat preservation body is a cylindrical first heat preservation body, and a second through hole is formed in the circumferential direction of the cylindrical first heat preservation body at intervals of 180 degrees, 90 degrees or 60 degrees.
7. An apparatus for growing crystals by a guided mode process, comprising:
a lower thermal field structure;
the upper thermal field structure is arranged on the lower thermal field structure; the upper thermal field structure is the thermal field structure of any one of claims 1-6;
the lifting mechanism comprises a lifting rod, the lifting rod is located in the first through hole of the thermal field structure, and one end of the lifting rod is used for installing seed crystals.
8. The apparatus of claim 7, wherein the device comprises a plurality of sensors,
the lower thermal field structure comprises:
a second heat insulator;
the induction coil is arranged outside the second heat insulation body in a surrounding way;
the crucible is arranged in the second heat insulating body, a die is arranged in the crucible, and the central axis of the crucible coincides with the central axis of the first through hole.
9. The apparatus of claim 8, wherein the second thermal insulator comprises:
the first heat preservation layer is arranged at the lower part of the crucible;
the second heat preservation layer is arranged outside the crucible in a surrounding way;
zirconium sand is filled between the second heat insulation layer and the crucible.
10. The apparatus of claim 9, wherein the second thermal insulator further comprises:
the third heat preservation layer is arranged at the lower part of the first heat preservation layer;
a zirconia cotton layer arranged on the zirconia sand;
and the zirconia fiber brick layer is arranged on the zirconia cotton layer.
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|---|---|---|---|
| CN202311436741.XA CN117626408A (en) | 2023-10-31 | 2023-10-31 | Thermal field structure and device for growing crystals by guided mode method |
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| CN202311436741.XA CN117626408A (en) | 2023-10-31 | 2023-10-31 | Thermal field structure and device for growing crystals by guided mode method |
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