KR101333791B1 - Apparatus for growing single crystal - Google Patents

Abstract

The present invention relates to a device for single crystal growth comprising a crucible having an inner space formed and an upper part opened; a heating unit separated from the side wall of the crucible and including a plurality of heaters for heating the crucible; and a puller arranged above the crucible. The environment for a single crystal growth process can be elaborately controlled because the temperature of the crucible can be locally controlled by controlling the heaters independently. That is to say, the temperatures of the lower side part, upper part and bottom part of the crucible can be adjusted to different temperatures respectively by heating the crucible with a plurality of heaters arranged to induce different electric fields in the lower side part, upper part and bottom part of the crucible. High-quality single crystals can be formed because the temperature of the crucible can be adjusted to obtain an optimal condition for single crystal growth and defects such as microbubbles, twinning and dislocation occurring in a crystal growth process can be inhibited or prevented.

Description

Single Crystal Growth Device {apparatus for growing single crystal}

The present invention relates to a single crystal growth apparatus, and more particularly, to a single crystal growth apparatus capable of suppressing and preventing occurrence of defects of single crystals through local temperature control of the crucible.

Sapphire single crystal (Al ₂ O ₃ ) has better optical, mechanical, high temperature stability and chemical resistance than other substrate materials such as silicon carbide (SiC) or ZeSe single crystal, and can be manufactured economically compared to other single crystals. It is attracting attention as a substrate for Emitting Diode). In this case, the sapphire single crystal has a hexagonal crystal structure and is used for various purposes according to the crystal plane orientation, the a crystal plane of sapphire is used for LCD, optical and chemical resistance, and the c crystal plane is used for the LED substrate.

Such sapphire single crystal melts high-purity alumina (Al 2 O 3) powder at a high temperature of 2040 ° C. or higher, and grows the single crystal while contacting the single crystal seed and cooling it by a local temperature control method.

In general, sapphire single crystal growth methods include various techniques such as Brigman method, Kyropoulos method, CZ (Czochralski) method, Edge-Defined film-Fed growth method, and Heat Exchange Method (HEM) method. Is being applied. In addition, there are resistance heating and high frequency induction heating. (Here, Figure 1 is a view for explaining a conventional induction heating type single crystal growth apparatus.)

As shown in FIG. 1, the insulator 70 is seated on the lower block 7 in the chamber 5, and the crucible 10 in which the single crystal raw material is accommodated is disposed in the insulator 70. At this time, the heating unit 30 for heating the crucible 10 is provided on the outside of the crucible, the power is supplied from the power supply 33 to the heating unit 30. Thus, the single crystal raw material in the crucible heated by the heating unit 30 is pulled up by the puller 20 and grows.

However, unlike induction heating single crystal growth apparatus, unlike induction heating single crystal growth apparatus, since it uses only one power supply and a heating unit to heat, the disadvantage of inability to precisely independently and independently control the temperature gradient of the crucible 10 is reduced. have. Thus, a problem occurs that causes stress concentration in a crystal part in which a high temperature gradient for melting the single crystal raw material contained in the crucible 10 is grown.

As such, an unoptimized process atmosphere in the process of growing a single crystal causes cracking of the single crystal and a limitation of the diameter in which a relatively brittle single crystal material can grow is required. In addition, defects such as bubbles, twins, and dislocations occur in the single crystal, which causes a problem that the single crystal mass production process is not easy.

If the above defects are included in the single crystal, the quality of the single crystal is consequently deteriorated, resulting in a problem in that a single crystal of high quality cannot be formed.

KR 2012-0052435 A1

The present invention provides a single crystal growth apparatus capable of local temperature control of the crucible.

The present invention provides a single crystal growth apparatus capable of improving the quality by reducing the occurrence of defects of the single crystal.

A single crystal growth apparatus according to an embodiment of the present invention, a heating unit including a crucible having an inner space and an upper portion thereof, spaced apart from sidewalls of the crucible, and a plurality of heaters heating the crucible, the crucible upper side And an impression device disposed in the heaters, each of which is independently controlled.

The crucible may include an upper crucible, which penetrates the upper and lower portions and forms a space therein, and a lower crucible provided at a lower portion of the upper crucible and opened at an upper portion thereof.

The heating unit includes a first heater provided above the outer side of the crucible and heating the upper crucible, and a second heater provided spaced below the first heater and heating the side of the lower crucible, Power supplies may be connected to the first heater and the second heater, respectively.

A shielding member may be provided between the first heater and the second heater.

A third heater for heating the bottom surface of the lower crucible may be provided at the outer bottom portion of the crucible, and a power supply may be connected to the third heater.

A shielding member may be provided between the second heater and the third heater.

The heaters receive currents of different frequencies from the power supply, and the heaters may generate electric fields of different sizes.

The crucible may have a lower calorific value in order of a lower crucible, an upper crucible, and a bottom surface of the lower crucible.

The second heater may be larger than the first heater and the third heater, and the first heater may receive a current having a frequency greater than that of the third heater.

At least one of the heaters may include a resistance heating method.

The crucible may include an outer crucible having an open top and an inner crucible disposed inside the outer crucible, and a filling member may be provided between the outer crucible and the inner crucible.

The outer crucible may have a side surface and a bottom surface formed separately, and the bottom surface may be heated by a third heater.

According to the single crystal growth apparatus according to the embodiment of the present invention, it is possible to control the temperature of the crucible locally to finely control the single crystal growth process environment. That is, by arranging a plurality of heaters for inducing different electric fields on the lower side and the upper side of the crucible, the temperature of the upper and lower sides of the crucible side can be adjusted differently.

And, by providing a heater in addition to the lower block disposed inside the chamber, it is possible to increase the amount of heat generated at the bottom of the crucible relatively far from the heater disposed on the side, it is possible to control the temperature.

In this way, a plurality of heaters are provided to enable local temperature control of the top and bottom of the side of the crucible and the bottom of the crucible so that the temperature can be formed under optimum conditions suitable for single crystal growth. As a result, defects such as microbubbles, twins, dislocations, and the like can be suppressed or prevented to form high quality single crystals.

1 is a view showing a conventional induction heating single crystal growth apparatus.
2 is a view showing a single crystal growth apparatus according to an embodiment of the present invention.
3 is a view showing a single crystal growth apparatus according to a modification of the present invention.
4 is a diagram illustrating a crucible provided in the single crystal growth apparatus of FIGS. 2 and 3.
5 is a diagram illustrating a crucible according to a modification of the crucible of FIG. 4.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.

2 is a view showing a single crystal growth apparatus according to an embodiment of the present invention. 3 is a view showing a single crystal growth apparatus according to a modification of the present invention. 4 is a diagram illustrating a crucible provided in the single crystal growth apparatus of FIGS. 2 and 3. 4A is a perspective view of the crucible, and FIG. 4B is a sectional view.

Referring to FIG. 2, the single crystal growth apparatus 1000 according to an exemplary embodiment of the present invention is provided with an inner space, an open top of the crucible 200, and spaced apart from sidewalls of the crucible 200. It includes a heating unit 300 including a plurality of heaters (300a, 300b, 300c) for heating the 200, the impression unit 500 disposed above the crucible (200). In addition, the single crystal growth apparatus 1000 may include a chamber 100 forming an inner space in which the crucible 200 is disposed, a lower block 130 disposed below the chamber 100, and a crucible (in the chamber 100). It may also include a thermal insulator 150 surrounding the 200.

The chamber 100 is partially open at the top and forms a space in which the components of the single crystal growth apparatus may be disposed. The chamber 100 may be formed in various shapes and may be formed in a cylindrical shape and a polygonal shape. Meanwhile, the chamber 100 may serve to protect the components in order to suppress the components disposed therein from being exposed to the external environment. In this case, the lower block 130 may be provided at the inner bottom of the chamber 100 so that the crucible 200 may be seated.

The lower block 130 is installed on the inner bottom surface of the chamber 100, and the crucible 200 is disposed on the upper side. In this case, the lower block 130 may form a passage through which the temperature sensing unit (not shown) and the crucible 200 are connected to measure the temperature of the crucible 200 described above, as shown in FIG. 3. At least one of the heating units 300 may form a space disposed therein. Therefore, hereinafter, the direction in which the lower block 130 is used will be described in detail with reference to each component.

The heat insulator 150 is seated on the lower block 130 in the chamber 100, and the upper part is partially opened. At this time, the heat insulator 150 has a space for accommodating the crucible 200 therein. The heat insulator 150 surrounds the crucible 200 and serves to suppress or prevent the heat generated from the crucible 200 from being released to the lower and side surfaces of the chamber 100. At this time, the heat insulator 150 is shown to surround the crucible 200 in one layer, but may be formed of a plurality of layers to surround the crucible 200. In addition, the material of the heat insulating material 150 is not particularly limited, but is preferably formed of a material having excellent heat resistance so that deformation due to heat does not occur.

On the other hand, as shown in Figure 2, a protrusion or step is formed toward the inner surface of the heat insulating material 150 can be spaced apart between the upper crucible (200a) and the lower crucible (200b) described below. This will be described in detail below.

The crucible 200 is located inside the chamber 100, and single crystal raw material is accommodated therein. The crucible 200 is formed to have an open top and a space in which the raw material can be accommodated. At this time, the crucible 200 is made of a material having excellent high temperature physical properties that do not cause deformation by heat even above the melting point of the raw material to be grown as a crystal and a material capable of generating heat by an induction electric field generated from the heating unit 300. It is preferable to be.

On the other hand, the crucible 200 according to an embodiment of the present invention, as shown in Figure 4, the upper and lower parts through the upper crucible (200a) and a space formed therein, spaced apart below the upper crucible (200a), It includes a lower crucible 200b having an upper portion. In this case, although the crucible 200 is shown to be formed in a cylindrical shape, the shape of the crucible 200 is not limited thereto, and may be modified in various forms in which single crystal raw material can be accommodated.

The upper crucible 200a is formed in a cylindrical tubular shape in which upper and lower portions penetrate and a passage is formed therein. The upper crucible 200a is disposed above the protrusion or the stepped portion of the heat insulating material 150 described above.

The lower crucible 200b is provided to be spaced apart from the lower portion of the upper crucible 200a, and the upper crucible is formed in a cylindrical shape in which single crystal raw material is accommodated. The lower crucible 200b is disposed below the protrusion or step portion of the heat insulator 150.

As such, since the crucible 200 is formed by being separated into the upper crucible 200a and the lower crucible 200b, the upper crucible 200a and the lower crucible 200b may be heated by different heaters, respectively. That is, the temperature at which the upper crucible 200a and the lower crucible 200b are heated may be different from each other by receiving different electric fields from the heating units 300 to which currents of different frequencies are applied. At this time, since the upper crucible 200a and the lower crucible 200b are disposed in a non-contact manner by the protrusions of the heat insulating material 150, when the different electric fields are applied to each other and generate heat at different temperatures, the upper crucible 200a and the lower crucible 200b. ) Interference can be suppressed or prevented.

Hereinafter will be described in detail by the heating unit 300 for heating the above-mentioned crucible 200.

The heating unit 300 is spaced apart from the side wall of the crucible 200 to supply an induction electric field to the crucible 200. At this time, the heating unit 300 may be an RF coil for generating an electric field when a current is supplied. When a coil is used as the heating unit 300, the heating unit 300 surrounds the crucible 200 at the outside of the crucible 200 and extends a predetermined length upward and downward. That is, it wraps up and down to cover the entire outer area of the cylindrical crucible 200. Thus, the cross-sectional view as shown in Figures 2 and 3 can represent the shape of a circle.

Meanwhile, the heating unit 300 is provided to be spaced apart from the first heater 300a and the first heater 300a disposed on the outer surface of the crucible 200, and the second heater 300 is provided below the side of the crucible 200. Heater 300b. At this time, the plurality of heaters (300a, 300b) are each independently controlled.

The first heater 300a is disposed above the outer side of the crucible 200 and heats the upper crucible 200a of the crucible 200. At this time, the first heater (300a) can control the residual stress generated during the growth of the single crystal can grow a high quality single crystal.

The second heater 300b is spaced apart from the bottom of the first heater 300a on the outer surface of the crucible 200. That is, the lower surface of the crucible 200 is disposed. The second heater 300b receives the current from the power supply 400 and heats the lower crucible 200b. More specifically, the side of the lower crucible 200b is heated. Thus, the raw material contained in the crucible 200 is melted.

As illustrated in FIG. 3, a third heater 300c for heating the bottom of the lower crucible 200b may be further provided at the outer bottom of the crucible 200.

The third heater 300c is provided at the bottom of the outside of the crucible 200, and is provided to heat the bottom of the crucible 200. In this case, the third heater 300c may be disposed in the lower block 130 provided in the chamber 100. As such, since the third heater 300c is provided in the lower block 130, the heat generated from the crucible 200 may be compensated or prevented from leaking to the lower block 130. In addition, since the third heater 300c is disposed close to the bottom of the lower crucible 200b having a large distance from the second heater 300b, the third heater 300c may easily heat the bottom.

Power supply 400 is a device connected to the above-described heating unit 300 to supply a high frequency current to the heating unit (300). As shown in FIGS. 2 and 3, the power supply 400 may be provided and connected to the first heater 300a, the second heater 300b, and the third heater 300c, respectively. By supplying currents of different frequencies to the heaters 300a, 300b, and 300c, electric fields of different sizes are generated in the heaters 300a, 300b, and 300c. At this time, the number of power supplies 400 is not limited, and may be changed according to the number of heaters provided. At this time, the heated crucible 200 is lower in the order of the lower crucible 200b, the upper crucible 200a, the bottom of the lower crucible in the amount of heat generated. Thus, the frequency of the current applied from the power supply 400 to the heating unit 300 is applied in the size of f1 (second heater) ≥ f2 (first heater) >> f3 (third heater). That is, the second heater 300b is larger than the first heater 300a and the third heater 300c, and the first heater 300a is supplied with a current having a frequency greater than that of the third heater 300c.

On the other hand, in the method of controlling the temperature of the crucible 200 as described above, as in the embodiment of the present invention, the current of different frequencies may be supplied, and local temperature control of the crucible may be performed by different electric fields generated therein. In addition, at least one of the first heater to the third heater may include a resistance heating method to heat the crucible more easily.

Shielding member 350 is installed between the above-described heating unit 300, each of the heating unit 300 serves to prevent the electric field of each other interference. More specifically, the shielding member 350 is provided between the first heater 300a and the second heater 300b, and the shielding member 350 is provided between the second heater 300b and the third heater 300c. do. Therefore, the electric field applied to the first heater 300a is blocked so as not to affect the second heater 300b, and the electric field applied to the second heater 300b is blocked so as not to affect the third heater 300c. do. As such, the respective heating units 300 must be blocked by the shielding member 350 so that the electric fields generated from the first heater 300a, the second heater 300b, and the third heater 300c do not interfere with each other and the crucible 200 Can be delivered.

On the other hand, the shielding member 350 preferably uses a shielding material that is usually manufactured, the material of the shielding member 350 is not limited in the present invention.

Hereinafter, the effect of the present invention according to the frequency supplied to the above-described heating unit 300 will be described in detail through the equation.

The electromagnetic field governing equation for the high frequency induction heating induced in the crucible 200 by the heating unit 300 arranged in a circle is shown in Equation 1 below.

[Equation 1]

는 자기폰텐셜 벡터, ω(=2πf)는 복수의 가열유닛에 공급되는 전류의 각각의 주파수, μ₀는 진공투자율,

는 도가니의 전기전도도를 나타낸다. 또한, f는 인가 전원의 주파수를 의미한다. Where j is conjugate,

Is the magnetic potential vector, ω (= 2πf) is the frequency of each of the currents supplied to the heating units, μ ₀ is the vacuum permeability,

Represents the electrical conductivity of the crucible. In addition, f means the frequency of an applied power supply.

)는 하기의 식2와 같이 나타낸다.Next, the magnetic field potential distribution according to the radius (r), height (h) direction, and time (t) of the single crystal growth furnace (

Is represented by the following formula (2).

[Formula 2]

A (r, h, t) = C (r, h) cosωt + S (r, h) sinωt

Here, C (r, h) and S (r, h) mean in-phase and out-of phase components, respectively.

In addition, the heating calorific value Q induced in the crucible by the high frequency AC current applied by the power supply is expressed by Equation 3 below.

[Formula 3]

ω² (C² + S²)] / (2 r²)]Q (r, h) = [

ω ² (C ² + S ² )] / (2 r ² )]

Through the above equation, the amount of heat Q generated in the crucible 200 is proportional to the square of the current frequency ω supplied to the heating unit 300. Thus, a current of 3 to 8 kHz is supplied to the first heater 300a, a current of 5 to 10 kHz is supplied to the second heater 300b, and a frequency of about 0.5 to 1 kHz to the third heater 300c. When supplying a current having a, the lower crucible 200b heated by the second heater (300b) to have the highest temperature, it is possible to compensate for the heat loss generated locally by additional heat generation of the upper crucible (200a) have. In addition, through the heat generation of the bottom of the crucible 200 by the third heater (300c) additionally installed, to compensate for the problem that the amount of heat generated in the bottom of the crucible (200) due to the distance from the second heater (300b). Can be. Accordingly, it is easy to control the temperature of the crucible 200, so that the single crystal growth process conditions can be easily controlled.

The impression unit 500 is a device for growing crystals melted and grown in the crucible 200. The impression unit 520 is charged into the crucible 200 and has one side connected to the crystals. It includes a driving unit 540 connected to the other side.

The pulling unit 520 is formed in the shape of a bar extending in a predetermined length in the vertical direction, and a part thereof is disposed in the crucible. The pulling unit 520 may be connected to crystals at one end, and the pulling unit 520 may be raised from its original position to grow the crystals. The other end of the pulling unit 520 may be connected to the driving unit 540 to receive a rotational force from the driving unit 540 or to raise the lifting unit 520 by the driving unit 540. In addition, the impression unit 520 may be configured as a water-cooled jacket structure so that the cooling water flows therein. Accordingly, heat exchange with the crystal may be performed through the cooling water in the pulling unit 520.

The driving unit 540 is a device that is connected to the pulling unit 520 to rotate or raise the pulling unit 520, and is provided to grow crystals connected to the pulling unit 520. In more detail, it is a device for moving the pulling unit 520 in the vertical direction. Thus, the driving unit 540 may be a device capable of adjusting the rotation and height, for example, various types of motors such as a DC motor, a stepping motor, and an AC servo motor may be used. However, the driving unit 540 is not limited to the listed motors, and various devices capable of raising or rotating the pulling unit 520 may be applied.

In the single crystal growth apparatus 1000 formed as described above, the crucible 200 may be modified as shown in FIG. 5.

5 is a view showing a crucible according to a modified embodiment of the present invention. Here, FIG. 5A shows a separated perspective view of a modified form, and FIG. 5B shows a sectional view.

Referring to FIG. 5, the crucible 200 ′ according to the modified embodiment of the present invention is manufactured in a dual structure. That is, it includes an outer crucible 210 having an open top and an inner crucible 250 disposed inside the outer crucible 210. At this time, the filling member 230 may be provided between the outer crucible 210 and the inner crucible 250.

On the other hand, the crucible 200 'according to the modified form is manufactured in the same or similar form as the crucible 200 of the embodiment except that the structure is changed from a single structure to multiple structures. That is, the structures of the upper crucible 200a and the lower crucible 200b of the crucible 200 are equally applied to the crucible 200 'of the modified form.

The outer crucible 210 has an open upper side and is manufactured in a cylindrical shape in which a predetermined space for accommodating the inner crucible 250 is formed. The outer crucible 210 includes an upper outer crucible 210a disposed on the upper side of the protrusion 150 of the heat insulating material 150 and a lower outer crucible 210b spaced apart from the lower portion of the upper outer crucible 210a.

On the other hand, the external crucible 210 is preferably made of a metal that can easily generate heat by inducing high-frequency current from the heating unit (300). Moreover, it is preferable to have heat resistance which a deformation | transformation does not generate | occur | produce under the influence by high temperature. On the other hand, the outer crucible 210 may be manufactured in the form of only the top open as the crucible 200 of the embodiment, as shown in Figure 5, the side and the bottom may be manufactured separately from each other. As such, when the external crucible 210 is manufactured, since the electric field may be applied to the bottom surface of the external crucible 210 by the third heater 300c, the second heater (eg, heating the side of the external crucible 210) Interference with 300b) can be suppressed or prevented. In addition, since the outer crucible 210 can transfer heat without surrounding the inner crucible 250 and the filling member 230, the manufacturing cost required for the unnecessary portion of the corner portion can be reduced.

The inner crucible 250 is disposed inside the outer crucible 210 and is formed in the same or similar form as the outer crucible 210. The inner crucible 250 preferably has a smaller diameter than the outer crucible 210. The inner crucible 250 is an upper inner crucible 250a disposed at an upper side based on the protrusion of the heat insulating material 150, and a lower inner crucible provided below the upper inner crucible 250a like the outer crucible 210. 250b.

On the other hand, the inner crucible 250 is a metal that is relatively cheaper than the outer crucible, it is possible to increase the life of the crucible by replacing only the inner crucible after the single crystal growth process is completed.

Filling member 230 is provided with a predetermined thickness between the outer crucible 210 and the inner crucible 250. The filling member 230 includes an upper filling member 230a disposed on the upper side of the protrusion of the heat insulating material 150 and a lower filling member 230b spaced apart from the lower portion of the upper filling member 230a. The filling member 230 serves to buffer the deformation of the outer crucible 210 and the inner crucible 250 by heat and to stably mount the inner crucible 250 within the outer crucible 210. At this time, the filling member 230 has a thermal conductivity so that heat generated by the current applied to the external crucible 210 can be transferred to the internal crucible 250, for example, ZrO ₂ (zirconium oxide) may be used. . However, the material of the filling member 230 is not limited thereto, and may be made of at least one of ZrO ₂ and a refractory having thermal conductivity.

The filling member 230 may be disposed entirely between the outer crucible 210 and the inner crucible 250, but only in the lower part in consideration of the difference in thermal expansion coefficient and thermal deformation of the outer crucible 210 and the inner crucible 250. Can also be used.

More specifically, the filling member 230 disposed at the lower end of the crucible 200 'has a function of stably supporting the inner crucible 250 and can easily transfer heat generated from the outer crucible 210 to the inner crucible 250. High temperature materials with high thermal conductivity are suitable and, for example, at least one of W, Ta, Mo, SiC and Si ₃ N ₄ may be used.

In addition, the filling member 230 disposed on the side of the crucible (200 ') has a high thermal conductivity that can easily transfer the strain generated by the heat of the inner crucible 250 and the heat generated from the outer crucible 210 to the inner crucible. It can be formed into a hollow space capable of heat transfer by high temperature material and radiation. In this case, the empty space may be formed, for example, in a vacuum or inert atmosphere, and prevent high temperature reaction and oxidation of the inner crucible 250 and the outer crucible 210.

On the other hand, when the filling member 230 is disposed between the outer crucible 210 and the inner crucible 250, a space can be formed between the outer crucible 210 and the inner crucible 250 so that Easy to replace In addition, it is possible to prevent the heat generated from the external crucible 210 to be suddenly transferred to the internal crucible 250, thereby increasing the life of the crucible 200 ′.

By manufacturing the crucible 200 'as described above, the temperature can be controlled locally by the subdivision of the crucible 200', and the temperature distribution can be made uniform, thereby minimizing the convection of the single crystal melting portion caused by the temperature variation. Thus, defects such as bubbles and cracks that may occur during single crystal growth can be reduced.

As described above, the single crystal growth apparatus according to the embodiment of the present invention is capable of local temperature control of the crucible by providing a plurality of heaters to heat the crucible. That is, after the crucible is separated into an upper crucible and a lower crucible, the upper crucible is heated with a first heater and the lower crucible is heated with a different frequency with a second heater. In addition, by disposing a third heater at the bottom of the crucible and heating it, different temperatures are applied to the top, bottom, and bottom of the crucible side, thereby enabling different temperatures of the top, bottom, and bottom of the crucible side.

Thus, since the temperature control of a crucible is possible, temperature can be formed on the optimum conditions suitable for single crystal growth. Thus, defects such as micro bubbles, twins, and dislocations that may occur in the single crystal growth process can be suppressed or prevented, thereby improving the quality of the finally produced single crystal.

Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, one of ordinary skill in the art may variously modify and modify the present invention without departing from the spirit of the following claims.

1, 1000: single crystal growth apparatus 5, 100: chamber
7, 130: lower block 70, 150: insulation
10, 200, 200 ': Crucible 200a: upper crucible
200b: lower crucible 210: external crucible
250: internal crucible 230: filling member
30, 300: heating unit 300a: first heater
300b: second heater 300c: third heater
33, 400: power supply 20, 500: raise
350: shielding member

Claims (12)

A crucible having an inner space formed therein and an open top;
A heating unit spaced apart from sidewalls of the crucible and including a plurality of heaters for heating the crucible;
Includes; the impression unit disposed above the crucible;
The crucible is an upper crucible which penetrates the upper and lower parts and forms a space therein;
Includes the bottom of the upper crucible spaced apart, the upper crucible is open;
The heaters are each independently controlled to heat the upper crucible and the lower crucible. A crucible having an inner space formed therein and an open top;
A heating unit spaced apart from sidewalls of the crucible and including a plurality of heaters for heating the crucible;
Includes; the impression unit disposed above the crucible;
The heaters are each independently controlled,
The crucible is a single crystal growth apparatus in which the calorific value of the lower crucible, the upper crucible, the bottom surface of the lower crucible in order to decrease. The method of claim 2,
The crucible is an upper crucible which penetrates the upper and lower parts and forms a space therein;
And a lower crucible provided at an upper portion of the upper crucible and spaced apart from the lower crucible. The method according to claim 1 or 3,
The heating unit is provided on the outer surface of the crucible and the first heater for heating the upper crucible,
It is provided below the first heater spaced apart, and includes a second heater for heating the side of the lower crucible,
And a power supply connected to the first heater and the second heater, respectively. The method of claim 4,
Single crystal growth apparatus provided with a shielding member between the first heater and the second heater. The method of claim 4,
On the crucible outer bottom,
A third heater for heating the bottom surface of the lower crucible is provided,
Single crystal growth apparatus is connected to the power supply to the third heater. The method of claim 6,
Single crystal growth apparatus provided with a shielding member between the second heater and the third heater. The method according to claim 1 or 2,
The heaters are each supplied with a different frequency of current from a power supply,
The heaters are single crystal growth apparatus that generates electric fields of different sizes. The method of claim 6,
And the second heater is larger than the first heater and the third heater, and the first heater is supplied with a current having a frequency greater than that of the third heater. The method of claim 6,
At least one of the heaters comprises a resistance heating method. The method according to claim 1 or 3,
In the crucible,
An outer crucible having an open top;
And an inner crucible disposed inside the outer crucible.
Single crystal growth apparatus provided between the outer crucible and the inner crucible; The method of claim 11,
The outer crucible has a side and a bottom surface are formed separately,
And the bottom surface is heated by a third heater.

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