CN117604648A - Method for rapidly determining etching time of Z-direction cut quartz crystal - Google Patents
Method for rapidly determining etching time of Z-direction cut quartz crystal Download PDFInfo
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- CN117604648A CN117604648A CN202311633527.3A CN202311633527A CN117604648A CN 117604648 A CN117604648 A CN 117604648A CN 202311633527 A CN202311633527 A CN 202311633527A CN 117604648 A CN117604648 A CN 117604648A
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- crystal
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- cut quartz
- side wall
- face
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- 239000013078 crystal Substances 0.000 title claims abstract description 82
- 238000005530 etching Methods 0.000 title claims abstract description 69
- 239000010453 quartz Substances 0.000 title claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000007788 liquid Substances 0.000 claims description 4
- 229910021489 α-quartz Inorganic materials 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Abstract
The invention discloses a method for rapidly determining etching time of Z-direction cut quartz crystals, which comprises the following steps: 1) Obtaining the etching rate V of the wafer in the Z direction Z : 2) Obtaining the etching rate V of the side wall crystal edge crystal face occurring during Z-direction cutting through the calculation of the known crystal face rate ratio xy The method comprises the steps of carrying out a first treatment on the surface of the 3) By hexagonal system of two crystal planes (h 1 k 1 i 1 l 1 ) Sum (h) 2 k 2 i 2 l 2 ) Calculating the included angle phi between the Z direction and the side wall crystal orientation according to the included angle formula; 4) Substituting the included angle phi into a calculation formula to calculate the total etching time t. The method has few operation steps, can rapidly and accurately calculate the etching time of the Z-direction cut quartz crystal, and can be widely applied to the wet etching field of wet Z-direction cut quartz crystals.
Description
Technical Field
The invention relates to the field of quartz etching processing, in particular to a method for rapidly determining the etching time of Z-direction cut quartz crystals.
Background
Quartz crystals are widely used in the field of MEMS fabrication due to their special physicochemical properties. Since quartz crystals have excellent characteristics such as a typical piezoelectric effect, good insulation, high light transmittance (allowing ultraviolet rays to pass therethrough), and high-frequency resonance, it is a good material for manufacturing many MEMS micro-device substrates, such as tuning fork probes, resonators, microscope heads, and the like. The anisotropic wet etching is an important process method for processing the existing quartz micro-nano structure, has high etching rate, simple and easily controlled etching process and low cost, and has more obvious advantages for processing irregular complex three-dimensional structures such as sharp corners, cavities, vertical and non-vertical high-aspect ratio side walls, cantilever beams and the like. Experiments show that the quartz crystal microstructure obtained through the wet etching process has fewer surface flaws and higher dimensional accuracy, and can better meet the performance requirements of products.
The wet mask etching of the Z-cut wafer is the most widely used etching mode in the industry at present, and because the etching rate of each crystal face of the quartz crystal is different, the etching rate of the Z-direction crystal face is higher than that of other crystal faces, the etching results shown in fig. 2 and 3 can appear, the side wall crystal edges can appear, and the etching time needs to be increased to flatten the side wall crystal edges. The prior art is to repeatedly take out and observe the trimming degree of the side wall crystal edges in the etching process so as to determine the final etching time. The method is complex in operation and long in time consumption, and a method capable of rapidly determining etching time is not available at present.
Disclosure of Invention
The invention aims to provide a method for quickly determining the etching time of a Z-direction cut quartz crystal, which solves the problems of complex operation and long time consumption of the existing etching time determination method.
The technical scheme adopted for solving the technical problems is as follows: a method for rapidly determining etching time of Z-direction cut quartz crystal comprises the following steps:
1) Obtaining the etching rate V of the wafer in the Z direction Z : placing the Z-cut quartz in etching liquid with preset concentration for etching, taking out after etching for a period of time, and measuring the etching amount of a single face; dividing the etched quantity of one side by etchingEtching time to obtain the Z-direction etching rate V of the wafer Z ；
2) Obtaining the etching rate V of the side wall crystal edge crystal face occurring during Z-direction cutting quartz etching through calculation of the known full crystal face rate ratio xy ；
3) By hexagonal system of two crystal planes (h 1 k 1 i 1 l 1 ) Sum (h) 2 k 2 i 2 l 2 ) Is defined by the formula:
wherein: for the alpha quartz cell constant a=b=0.496 nm, c=0.545 nm; substituting the (hkil) values of the Z-direction crystal face and the side wall crystal edge crystal face to calculate the included angle phi between the Z-direction crystal edge crystal face and the side wall crystal edge crystal face;
4) By the formula
The etching time t of the Z-cut quartz crystal can be obtained. Where h is the thickness of the etched crystal.
The invention has the beneficial effects that: the Z-direction cutting quartz crystal etching time can be obtained rapidly and accurately through the method, and the method is convenient to calculate and high in accuracy.
The invention will be described in more detail below with reference to the drawings and examples.
Drawings
FIG. 1 is a schematic diagram of the definition of a Y-direction wafer and an X-direction wafer according to the present invention.
FIG. 2 is a schematic view of the edge of a Y-direction wafer Z-cut quartz etching side wall according to the present invention.
FIG. 3 is a schematic view of the edge of a quartz wafer in the Z-direction cut of the X-direction wafer according to the present invention.
Fig. 4 is a schematic diagram of an included angle Φ between a Z direction and a side-wall crystal orientation according to the present invention.
Detailed Description
Example 1: a method for rapidly determining etching time of Z-direction cut quartz crystal, when the quartz crystal to be etched is a Y-direction wafer, the definition of X-direction wafer and Y-direction wafer is shown in figure 1, comprises the following steps:
1) Obtaining the etching rate V of the wafer in the Z direction Z : placing the Z-cut quartz in etching liquid with preset concentration for etching, taking out after etching for a period of time, and measuring the etching amount of a single face; dividing the single-sided etching amount by etching time to obtain the Z-directional etching rate V of the wafer Z ；
2) When a Y-direction wafer of Z-cut quartz is etched, a crystal edge can appear on a single side wall of the crystal, which corresponds toThe side wall crystal edge appearing during Z-cut quartz etching is obtained by calculation of the known full-face rate ratio as shown in FIG. 2>Etching rate of crystal face->
3) By hexagonal system of two crystal planes (h 1 k 1 i 1 l 1 ) Sum (h) 2 k 2 i 2 l 2 ) Is defined by the formula:
wherein: for the alpha quartz cell constant a=b=0.496 nm, c=0.545 nm; substituted Z-direction crystal face and side wall crystal edgeThe value of (hkil) of the crystal face is calculated as Z-direction and side wall crystal edge +.>The included angle phi of the crystal face is shown in figure 4;
4) By the formula
The etching time t of the Z-cut quartz crystal can be obtained. Where h is the thickness of the etched crystal.
Example 2: a method for rapidly determining etching time of Z-direction cut quartz crystal, when the quartz crystal to be etched is an X-direction wafer, the definition of the X-direction wafer and the Y-direction wafer is shown in figure 1, comprises the following steps:
1) Obtaining the etching rate V of the wafer in the Z direction Z : placing the Z-cut quartz in etching liquid with preset concentration for etching, taking out after etching for a period of time, and measuring the etching amount of a single face; dividing the single-sided etching amount by etching time to obtain the Z-directional etching rate V of the wafer Z ；
2) When the X-direction wafer of Z-cut quartz is etched, crystal edges appear on both side walls, respectively corresponding toCrystal face and->The crystal face, as shown in FIG. 3, is calculated by the known full crystal face rate ratio to obtain the two side wall crystal edges at the time of Z-direction etching>Andis>And->Comparison->And->Is>Is slow toCalculating a crystal face;
3) By hexagonal system of two crystal planes (h 1 k 1 i 1 l 1 ) Sum (h) 2 k 2 i 2 l 2 ) Is defined by the formula:
wherein: for the alpha quartz cell constant a=b=0.496 nm, c=0.545 nm; substituted Z-direction crystal face and side wall crystal edgeThe value of (hkil) of the crystal face is calculated as Z-direction and side wall crystal edge +.>The crystal orientation angle phi is shown in fig. 4;
4) By the formula
The etching time t of the Z cut quartz crystal can be obtained, wherein h is the thickness of the etched crystal.
The invention is described above by way of example with reference to the accompanying drawings. It will be clear that the invention is not limited to the embodiments described above. As long as various insubstantial improvements are made using the method concepts and technical solutions of the present invention; or the invention is not improved, and the conception and the technical scheme are directly applied to other occasions and are all within the protection scope of the invention.
Claims (1)
1. The method for rapidly determining the etching time of the Z-direction cut quartz crystal is characterized by comprising the following steps of:
1) Obtaining the etching rate V of the wafer in the Z direction Z : placing the Z-cut quartz in etching liquid with preset concentration for etching, taking out after etching for a period of time, and measuring the etching amount of a single face; dividing the single-sided etching amount by etching time to obtain the Z-directional etching rate V of the wafer Z ；
2) Obtaining the etching rate V of the side wall crystal edge crystal face of the Z-cut quartz during etching through calculation of the known full crystal face rate ratio xy ；
3) By hexagonal system of two crystal planes (h 1 k 1 i 1 l 1 ) Sum (h) 2 k 2 i 2 l 2 ) Is defined by the formula:
wherein: for the alpha quartz cell constant a=b=0.496 nm, c=0.545 nm; substituting the (hkil) values of the Z-direction crystal face and the side wall crystal edge crystal face to calculate the included angle phi between the Z-direction crystal edge crystal face and the side wall crystal edge crystal face;
4) By the formula
The etching time t of the Z cut quartz crystal can be obtained; where h is the thickness of the etched crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311633527.3A CN117604648A (en) | 2023-12-01 | 2023-12-01 | Method for rapidly determining etching time of Z-direction cut quartz crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311633527.3A CN117604648A (en) | 2023-12-01 | 2023-12-01 | Method for rapidly determining etching time of Z-direction cut quartz crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117604648A true CN117604648A (en) | 2024-02-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311633527.3A Pending CN117604648A (en) | 2023-12-01 | 2023-12-01 | Method for rapidly determining etching time of Z-direction cut quartz crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117604648A (en) |
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2023
- 2023-12-01 CN CN202311633527.3A patent/CN117604648A/en active Pending
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