CN117587385A

CN117587385A - Gas manifold for substrate processing apparatus

Info

Publication number: CN117587385A
Application number: CN202311050046.XA
Authority: CN
Inventors: 金秀宪; 朴海允; 成振昊; 郑盈箕
Original assignee: Shengjisheng Korea Semiconductor Technology Co ltd
Current assignee: Shengjisheng Korea Semiconductor Technology Co ltd
Priority date: 2022-08-19
Filing date: 2023-08-17
Publication date: 2024-02-23
Also published as: KR20240025780A

Abstract

The present invention relates to a gas manifold of a substrate processing apparatus, and provides a gas manifold of a substrate processing apparatus for supplying a process gas from a gas supply source to a process chamber performing a substrate processing process, comprising: a metal material supply pipe extending from the gas supply source to the distributor in the up-down direction; an inflow pipe of a metal material connected to the process chamber, for flowing the process gas into the process chamber; and a delivery pipe of a ceramic material interposed between the distributor and the inflow pipe, for delivering the process gas transferred through the supply pipe to the inflow pipe, wherein thermal stress caused by a compressive or tensile displacement due to a temperature change can be offset, thereby improving a durability life.

Description

Gas manifold for substrate processing apparatus

Technical Field

The present invention relates to a gas manifold for a substrate processing apparatus, and more particularly, to a gas manifold for a substrate processing apparatus capable of maintaining airtightness while canceling thermal stress generated by a difference in gas temperature of a supply pipe for supplying a process gas to a process chamber.

Background

In general, a plasma chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition; PECVD) apparatus is used to deposit an insulating film, a protective film, an oxide film, a metal film, etc. on a substrate using a chemical reaction of a gas in a vacuum state in a display manufacturing process or a semiconductor manufacturing process.

Fig. 1 is a longitudinal sectional view of an example of a general substrate processing apparatus having a dual chamber. As shown in fig. 1, the substrate processing apparatus 9 includes a first process chamber unit 9A and a second process chamber unit 9B having two process chambers 11, 21.

Specifically, the substrate processing apparatus 9 includes: two process chambers 11, 21 having inner spaces 11c, 21c sealed from the outside so as to maintain a vacuum state during the deposition process; a fixing body 30 disposed between the process chambers 11, 21 to maintain a space therebetween; a susceptor 12, 22 provided in the process chambers 11, 21 in a liftable manner, for placing the substrate W; a showerhead 13, 23 that supplies a process gas including a source gas as a deposition material to the inside of the process chamber 11, 21; a gas supply source CC for supplying 51 process gas to the shower heads 13 and 23 through the gas pipes 31 to 33; a pumping channel 14, 24 for exhausting the gas received by the process chamber 11, 21 to the outside of the inner space 11c, 21 c; a common discharge passage 40 extending from the suction passages 14, 24.

In order to maintain the vacuum state of the inner space of the process chambers 11, 12 while accomplishing the up-and-down movement of the susceptors 12, 22, bellows for isolating the outside air may be provided. Thus, the inside of the process chambers 11, 21 is adjusted to a vacuum state smaller than the atmospheric pressure in a state where the substrates W are placed on the susceptors 12, 22.

In this state, when the gas supply source CC supplies the process gas to the showerhead 13, 23, the process gas can be supplied into the process chamber 11, 21 through the showerhead 13, 23. At this time, if a continuous power is applied from the RF power supply unit to generate plasma in the process chambers 11 and 21, a film having a constant thickness is formed on the surface of the substrate W.

The process gas supplied to the process chambers 11, 21 through the showerheads 13, 23, after forming plasma, is forced to flow into the pumping passages 14, 24 to which the suction pressure is applied. Then, flows into the common discharge passage 40 through the outlets of the suction passages 14, 24 and is discharged 53 to the outside.

Further, since the process gas supplied from the gas supply source CC to the process chambers 11 and 21 is supplied at a high temperature of 150 ℃ to 200 ℃, the gas pipes 31 to 33 extending to the inflow ports 13a and 23a of the process chambers 11 and 21 are repeatedly subjected to thermal expansion and thermal contraction between normal temperature and high temperature.

However, in the substrate processing apparatus 9, in order to supply the process gas to the two process chambers 11 and 21 by using one gas supply source CC, the gas piping does not extend in one direction, and the flow path has a curved portion as shown in fig. 1 and 2. Therefore, the gas pipes are connected to each other by a plurality of connection portions, and process gas is supplied 52 from the gas supply source CC to the shower heads 13, 23 of the process chambers 11, 21.

However, when the gas is supplied at a high temperature, there is a temperature difference depending on the position, and thermal deformation in the vertical direction z and the extending direction x inevitably occurs in the gas pipes 31 to 33, and therefore there is a problem that the process gas leakage may occur at the connection portions of the gas pipes 30 (31, 32, and 33).

The temperature of the portion A1 of the gas pipe 31 adjacent to the gas supply source CC is approximately 200 ℃, whereas the temperature of the portion A2 of the gas pipe 32 adjacent to the shower heads 13 and 23 is approximately 150 ℃, and the temperature difference is large. Therefore, there is also a problem that the thermal deformation amount of the gas pipes 31 to 33 varies.

Accordingly, it has been proposed to prevent leakage at the connection portions of the gas pipes 31 to 33 by providing teflon between the connection portions of the gas pipes 30 (31, 32, and 33). However, since the sealing member of the teflon material has poor durability and needs to be frequently replaced, there are problems in that process efficiency is lowered due to the inability to continuously perform the substrate processing process, and maintenance costs required for replacing the sealing member of the teflon material are increased.

Therefore, there is an urgent need for a solution that absorbs thermal deformation of the gas piping in the course of constructing the gas manifold that supplies the process gas from the gas supply source CC to at least two process chambers 11, 21 to minimize the occurrence of thermal stress and effectively suppress gas leakage at the gas piping connection portion.

The foregoing components and functions are not disclosed prior to the filing date of the present application and are provided for purposes of comparison to illustrate the techniques of the present invention.

Disclosure of Invention

Technical problem

In order to solve the above-described problems, an object of the present invention is to provide a gas manifold for a substrate processing apparatus, which can prevent a supply pipe constituting the gas manifold from being damaged or deformed due to thermal stress caused by thermal deformation in a process of supplying a high-temperature process gas from a gas supply source to a process chamber in a dual-chamber substrate processing system.

Further, an object of the present invention is to minimize maintenance management after providing a supply pipe for supplying a process gas from a gas supply source to a process chamber.

Technical proposal

In order to achieve the above object, the present invention provides a gas manifold of a substrate processing apparatus for supplying a process gas from a gas supply source to a process chamber performing a substrate processing process, comprising: a metal material supply pipe extending from the gas supply source to the distributor in the up-down direction; an inflow pipe of a metal material connected to the process chamber, for flowing the process gas into the process chamber; and a delivery pipe of a ceramic material interposed between the distributor and the inflow pipe, the delivery pipe being configured to deliver the process gas transferred through the supply pipe to the inflow pipe.

The purpose of this is to minimize thermal stress that causes compression and tension displacement due to temperature change caused by heat transfer of supply gas transfer during the process of supplying high-temperature process gas from a gas supply source to a process chamber by forming a horizontally aligned delivery pipe, which is large in thermal deformation, of a ceramic material in a gas pipe extending from the gas supply source to the process chamber.

The term "gas" and "process gas" used in the present specification and claims are generic terms of source gas, reactant gas, and modulation gas, and are defined for the purpose of generic terms of various gases supplied into a process chamber. A source gas which is a main film forming material at the time of forming a film on a substrate, and a reaction gas which reacts with the source gas which is a main material of forming a film formed on the substrate; a carrier gas for providing a specific gas to the process chamber; the gas is modulated for use during the modulating step within the process chamber.

The term "first" described in the specification and claims refers to the constituent element of the first process chamber unit 9A, the term "second" refers to the constituent element of the second process chamber unit 9B, and the term "second" excluding the term "first" or "second" and simultaneously referring to the reference numerals of the constituent elements of the first process chamber unit 9A and the reference numerals of the constituent elements of the second process chamber unit 9B refers to the collective term of the constituent elements of the first process chamber unit 9A and the second process chamber unit 9B.

Advantageous effects

As described above, in the present invention, when a gas pipe for supplying a process gas from a gas supply source to each process chamber is provided in a substrate processing system having at least two process chambers, the transfer pipe in the horizontal direction, which is large in thermal deformation, is formed of a ceramic material having a low coefficient of thermal expansion, so that the thermal deformation displacement is minimized, and the durability life of the gas pipe can be improved.

Most importantly, the invention can absorb the thermal expansion deviation of the conveying pipe and the pipe connected with the conveying pipe caused by temperature deviation by the deflection elastic displacement of the spring plate through the elastically deformable spring plate supporting the head of the fixing bolt penetrating one side of the conveying pipe of the ceramic material and connecting and fixing the pipe to be connected with the metal material, thereby obtaining the beneficial effect of counteracting the thermal stress caused by compression or stretching displacement according to the temperature change.

Based on this, the present invention can obtain an advantageous effect of fundamentally preventing damage or breakage of components due to thermal stress in a gas manifold for supplying a high temperature process gas.

In the present invention, the second pipe connected to the other side of the ceramic material transfer pipe is provided with the extension portion protruding from the second pipe toward the transfer pipe, and the extension portion of the second pipe is surrounded by the surrounding portion of the transfer pipe, so that the sealing characteristics of the transfer pipe and the second pipe can be ensured by connecting the extension portion and the second pipe with the sealing ring provided therebetween.

In particular, the present invention has an advantageous effect of obtaining reliable sealing characteristics and eliminating the possibility of air leakage by alternately arranging the seal rings having different cross sections between the surrounding portion of the transfer pipe and the extension portion of the second pipe so that the deformed portion of any one seal ring fills up the gap between the seal ring and the adjacent other seal ring.

Drawings

Fig. 1 is a longitudinal sectional view showing the structure of a general substrate processing apparatus.

Fig. 2 is an enlarged view of a portion 'a' in fig. 1.

Fig. 3 is a perspective view showing the structure of a gas manifold of a substrate processing apparatus according to an embodiment of the present invention.

Fig. 4 is an enlarged view of a portion 'B' in fig. 3.

Fig. 5 is an enlarged view of a portion 'C' in fig. 3.

Fig. 6a and 6b are sectional views taken according to the line X-X in fig. 5 for explaining the counteracting effect of the thermal stress.

Fig. 7 is a cross-sectional view of a corresponding portion of another embodiment of the present invention, taken according to line X-X in fig. 5.

Fig. 8 is a longitudinal sectional view of fig. 3.

Fig. 9 is an enlarged view of a portion 'D' in fig. 8.

Fig. 10 is an enlarged view of the 'E' portion of fig. 8.

Reference numerals

100: gas manifold 110: supply piping

120: delivery pipe 130: inflow piping

140: sealing ring 150: pipe joint

151: fixing bolt 154: spring plate

Detailed Description

Hereinafter, a gas manifold 100 of a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, in describing the present invention, a detailed description of known functions or configurations will be omitted for clarity of the subject matter of the present invention.

A substrate processing apparatus equipped with a gas manifold 100 according to an embodiment of the present invention has a dual chamber in which substrate processing processes are performed in two process chambers, respectively, as shown in fig. 1, including a first process chamber unit 9A and a second process chamber unit 9B. The first process chamber unit 9A has a first process chamber 11 for performing a substrate processing process, and the second process chamber unit 9B has a second process chamber 21 for performing a substrate processing process. Further, an exhaust passage 40 is provided between the first process chamber unit 9A and the second process chamber unit 9B for exhausting the process gas subjected to the substrate processing process from the first process chamber 11 and the second process chamber 21. The structure of the process chamber units 9A, 9B may be the same as or similar to the structure shown in fig. 1.

As shown in fig. 3 to 10, the gas manifold 100 of the substrate processing apparatus according to an embodiment of the present invention forms a gas path from a gas supply source CC supplying a process gas to each of the process chambers 11, 21 performing a substrate processing process to supply the process gas from the gas supply source CC to the first and second process chambers 11, 21.

Specifically, the gas manifold 100 includes: a metal material supply pipe 110 extending in the up-down direction from the gas supply source CC; a distributor 101 coupled to the supply pipe 110; a transfer pipe 120 extending in the horizontal direction from both sides of the distribution body 101; inflow piping 130 connected to inflow ports 13a and 23a, wherein inflow ports 13a and 23a communicate with shower heads 13 and 23 of the process chambers 11 and 21; a seal ring 140 interposed between the delivery pipe 120 and the inflow pipe 130, the inflow pipe 130 being connected to one side of the delivery pipe 120; a pipe coupling body 150 for coupling the delivery pipe 120 and the inflow pipe 130.

The supply pipe 110 is formed of a metal material having excellent durability, and extends from the gas supply source CC to the distribution body 101 in the vertical direction, and forms a supply flow path 110 p. For example, the supply pipe 110 may be formed of an aluminum material (e.g., al 6061).

The distributor 101 has an upper connection portion connected to the supply pipe 110 formed on the upper side thereof, and has side connection portions connected to the delivery pipe 120 formed on both sides thereof. The distribution body 101 is formed with a housing space 101c communicating with the supply flow passage 110 p.

The dispenser 101 may be formed of various metal materials having excellent durability, for example, may be formed of an aluminum material (e.g., a 16061).

One side of the delivery pipe 120 is coupled to the inflow pipe 130, and the other side is coupled to the distributor 101. The delivery pipe 120 may be formed of a ceramic-series material (e.g., AI 203) having a low coefficient of thermal expansion to temperature changes.

In this way, even if the expansion displacement due to the temperature change of the supply pipe 110, the distribution body 101, and the inflow pipe 130, which are made of a metal material having a relatively high thermal expansion coefficient, increases in the up-down direction (z-axis direction), the expansion displacement in the horizontal direction (x-axis direction) due to the temperature change of the delivery pipe 120 can be kept small, and distortion in the form of distortion occurring at the connection portions between the pipes 101, 110, 120, 130 of the gas manifold can be minimized.

One end of the inflow pipe 130 is connected to the delivery pipe 120, receives the process gas through the delivery pipe 120, and the other end is connected to the inflow ports 13a and 23a of the process chambers 11 and 21, and supplies the process gas to the shower heads 13 and 23.

The inflow pipe 130 is formed of various metal materials excellent in durability, and may be formed of an aluminum material (e.g., al 6061), for example.

In the gas manifold 100 having the above-described configuration, the process gas is supplied from the gas supply source CC to the accommodating space 101c of the distribution body 101 through the supply flow passage 110p of the supply pipe 110, and the process gas is supplied from the accommodating space 101c of the distribution body 101 to the showerheads 13, 23 of the process chambers 11, 21 through the curved inflow flow passages 130p1, 130p2 of the inflow pipe 130 connected to the transfer pipe 120 after passing through the transfer flow passage 120p of the transfer pipe 120, respectively.

Although not shown in the drawings, a control valve for controlling the supply flow rate of the process gas per unit time may be provided in the process gas supply flow path to individually control the flow rates of the process gases flowing into the first process chamber 11 and the second process chamber 21.

In the gas manifold 100 having the above-described structure, the thermal expansion deformation amount of the supply pipe 110, the distribution body 101, and the inflow pipe 130 due to the temperature change can be offset to some extent by the delivery pipe 120 of the ceramic material, but a structure is required in which a connection portion for connecting at least any one of the inflow pipe 130 and the distribution body 101 of the delivery pipe 120 can offset the thermal stress due to the temperature change and prevent the gas leakage while fixing the connection state by the connection fixing body 150.

The above-described structure is applicable to at least one of both sides of the transfer piping 120, and for convenience of explanation, the structure applied to the transfer piping 120 and the inflow piping 130 will be explained below.

As shown in fig. 3 to 6a, a step surface 120s is provided at the connection portion of the transfer pipe 120, a gasket plate 153 is closely provided on the step surface 120s, and a spring plate 154 is laminated on the gasket plate 153 such that the spring plate 154 is supported on the step surface 120s. In a state where the head of the fixing bolt 151 is hung on the spring plate 154, the male screw portion of the fixing bolt 151 penetrates the spring plate 154, the gasket plate 153, and the through hole 122 of the delivery pipe 120 at least two positions spaced apart from each other, and is fastened to the bolt hole 132 formed in the inflow pipe 130. At this time, a fixing washer or a spring washer 152 surrounding the fixing bolt 151 is provided between the spring plate 154 and the washer plate 153.

As a result, as shown in fig. 6b, the inflow pipe 130 is deformed by the difference in thermal expansion coefficient between the delivery pipe 120 and the inflow pipe 130, and when the delivery pipe 120 is not deformed, the high-rigidity fixing bolt 151 is pulled in the direction indicated by the reference numeral 130d by the thermal deformation of the inflow pipe 130, and therefore the spring plate 154 is deformed flexibly and elastically. The same applies to the case where the inflow piping 130 is deformed so as to move in the opposite direction to the reference numeral 130 d.

That is, based on thermal deformation due to temperature change between the delivery pipe 120 and the inflow pipe 130, compressive stress or tensile stress acts on the connection portion between the delivery pipe 120 and the inflow pipe 130, and the thermal expansion deformation amount deviation due to thermal deformation is absorbed and offset by the elastic deflection deformation amount of the spring plate 154 with the fixing bolt 151 as a medium. Therefore, stress concentration due to thermal stress does not occur on both sides of the connection portion between the delivery pipe 120 and the inflow pipe 130, and thus, there is an advantage that damage or breakage does not occur for a long period of time and a long life is ensured.

In addition, although a structure in which the elastic washer 152 surrounding the fixing bolt 151 is disposed between the spring plate 154 and the washer plate 153 in such a manner that an empty space is formed between the spring plate 154 and the washer plate 153 is shown in the drawings, according to another embodiment of the present invention, a fixing washer (or a flat washer) having a sufficient thickness may be provided instead of the elastic washer 152 as long as an empty space allowing the spring plate 154 to elastically flex is provided.

As shown in fig. 7, according to another embodiment of the present invention, a protrusion 254a protruding toward the other of the spring plate 254 and the gasket plate 153 may be formed on either one of the spring plate 254 and the gasket plate 153 to form an empty space between the spring plate 254 and the gasket plate 153 and function similarly.

In the structure of the connection fixing body 150, the washer 152 may be directly provided on the step surface 120s, and thus the washer plate 153 may be omitted in another embodiment of the present invention.

Further, since the connection fixing body 150 is connected and fixed to one side of the transfer pipe 120, thermal stress due to thermal expansion deviation caused by temperature change and temperature difference is offset to one side of the transfer pipe 120, as shown in fig. 10, O-rings 128 and 129 may be provided between the other side of the transfer pipe 120 and the connection portion of the distribution body 101, and the spacer 122 may be inserted to connect as necessary.

However, the present invention is not limited to this, and the present invention may be configured to connect to the distribution body 101 by the connection fixing body 150 described above on the other side of the transfer piping 120, and to connect to the distribution body 101 by the connection fixing body 150 only on the other side of the transfer piping 120.

As shown in fig. 4 and 9, at the connection portion where the delivery pipe 120 and the inflow pipe 130 are connected, the flow cross section of the delivery pipe 120 and the flow cross section of the inflow pipe 130 are the same and constant, at the same time, an extension portion 135 protruding toward the delivery pipe 120 in a closed cross section shape is formed at the inflow pipe 130, and a surrounding portion 125 surrounding the extension portion 135 is formed at the delivery pipe 120.

Further, an elastically deformable seal ring 140 is provided between the outer peripheral surface of the extension 135 of the inflow pipe 130 and the inner peripheral surface of the surrounding portion 125 of the delivery pipe 120. The seal rings 140 may be formed in a plurality of rows, and preferably, the seal rings are formed by alternately arranging first seal rings 141 having a substantially square cross section and second seal rings 142 having a circular cross section.

Thus, when the fixing bolts 151 are fastened to the bolt holes 132 of the inflow pipe 130, the delivery pipe 120 and the inflow pipe 130 are in close contact with each other, and the seal rings 140 provided in a plurality of rows between the extension portion 135 and the surrounding portion 125 are in close contact with each other, so that the gap between the delivery pipe 120 and the inflow pipe 130 is completely removed.

In other words, the first seal ring 141 and the second seal ring 142 are formed so that the cross sections are different from each other, and the shape difference generated by the compression deformation of the seal rings having different cross sections is filled with the shape of the compression deformation of the other adjacent seal ring, so that the gap between the extension 135 and the surrounding portion 125 is completely filled, and therefore, the gap between the transfer pipe 120 and the inflow pipe 130, which leaks gas, can be completely removed.

The reference numeral 120e, which is not illustrated in the drawings, is an inclined surface that fills the gap between the extension 135 and the surrounding portion 125 based on the combination of the seal rings 140 (141, 142) of different cross sections, and forms an accommodation space for accommodating a part of the cross section of the seal ring.

The seal 140 may be provided between the inflow pipe 130 and the delivery pipe 120, or between the delivery pipe 120 and the distributor 101, as shown in the drawings.

According to the gas manifold 100 of the substrate processing apparatus of the present invention having the above-described configuration, the pipe coupling body 150 including the fixing bolts 151 and the spring plates 154 couples the connection portions of the delivery pipe 120 and the inflow pipe 130 or the connection portions of the delivery pipe 120 and the distribution body 101, which are formed of different materials, so that an effect of canceling thermal stress caused by thermal expansion variation can be obtained, and at the same time, the extension portion 135 and the surrounding portion 125 are formed, and the plurality of seal rings 140 (141, 142) of different cross sections are arranged in the gap therebetween, so that even if the axial displacement occurs in the delivery pipe 120 of the ceramic material having a small thermal expansion deformation amount, the gap therebetween can be completely removed, whereby an advantageous effect of eliminating the possibility of gas leakage can be obtained.

As described above, while the present invention has been described with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that various modifications and variations may be made to the combination of the components according to the embodiments of the present invention without departing from the technical spirit and scope of the present invention as set forth in the appended claims.

Claims

1. A gas manifold of a substrate processing apparatus for supplying a process gas from a gas supply to a process chamber in which a substrate processing process is performed, comprising:

a metal material supply pipe extending from the gas supply source to the distributor in the up-down direction;

an inflow pipe of a metal material connected to the process chamber, for flowing the process gas into the process chamber;

and a delivery pipe of a ceramic material interposed between the distributor and the inflow pipe, the delivery pipe being configured to deliver the process gas transferred through the supply pipe to the inflow pipe.

2. The gas manifold of a substrate processing apparatus of claim 1, further comprising:

a fixing bolt penetrating the delivery pipe and fixed to any one of the distributor and the inflow pipe; and

a spring plate having a flexible and elastically deformable plate shape for supporting the head of the fixing bolt,

the elastic deformation of the spring plate absorbs the thermal expansion deviation between the distribution body and the inflow pipe and between the distribution body and the delivery pipe.

3. The gas manifold of the substrate processing apparatus of claim 2, wherein:

the conveying pipe is formed with a stepped surface for supporting the spring plate.

4. The gas manifold of the substrate processing apparatus of claim 3, wherein:

a gasket plate is disposed between the spring plate and the step surface.

5. The gas manifold of the substrate processing apparatus of claim 4, wherein:

a fixing washer surrounding the fixing bolt is arranged between the spring plate and the washer plate in such a manner that an empty space is formed between the spring plate and the washer plate.

6. The gas manifold of the substrate processing apparatus of claim 4, wherein:

a spring washer surrounding the fixing bolt is arranged between the spring plate and the washer plate in such a manner that an empty space is formed between the spring plate and the washer plate.

7. The gas manifold of the substrate processing apparatus of claim 4, wherein:

a projection is formed on either one of the spring plate and the washer plate so as to project toward the other one of the spring plate and the washer plate in such a manner that an empty space is formed between the spring plate and the washer plate.

8. The gas manifold of the substrate processing apparatus of claim 2, wherein:

at least two of the fixing bolts penetrate the spring plate at a distance from each other.

9. The gas manifold of the substrate processing apparatus according to any one of claims 1 to 8, wherein:

at least two process chambers, including a first process chamber and a second process chamber,

the supply pipe is one, and the transfer pipe is connected from the supply pipe to the inflow pipe connected to the first process chamber and the second process chamber, respectively.

10. The gas manifold of the substrate processing apparatus of claim 9, wherein:

the conveying piping extends horizontally.

11. The gas manifold of the substrate processing apparatus according to any one of claims 1 to 8, wherein:

the flow cross section of the delivery pipe is the same as the flow cross section of either the distributor or the inflow pipe.

12. The gas manifold of the substrate processing apparatus of claim 11, wherein:

an extension portion protruding toward the delivery pipe is formed on either one of the distribution body and the inflow pipe, and a surrounding portion surrounding the extension portion is formed on the delivery pipe;

an elastically deformable sealing ring is arranged between the extension part and the surrounding part.

13. The gas manifold of the substrate processing apparatus of claim 12, wherein:

the sealing rings are arranged in a plurality of rows.

14. The gas manifold of the substrate processing apparatus of claim 13, wherein:

the seal ring is formed by alternately arranging first seal rings and second seal rings having different cross sections from each other.