CN117572188A - Silicon carbide MOS tube diode through-flow aging testing device - Google Patents
Silicon carbide MOS tube diode through-flow aging testing device Download PDFInfo
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- CN117572188A CN117572188A CN202311577841.4A CN202311577841A CN117572188A CN 117572188 A CN117572188 A CN 117572188A CN 202311577841 A CN202311577841 A CN 202311577841A CN 117572188 A CN117572188 A CN 117572188A
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- 238000012360 testing method Methods 0.000 title claims abstract description 64
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 62
- 230000032683 aging Effects 0.000 title claims abstract description 40
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 230000005855 radiation Effects 0.000 claims abstract description 3
- 238000005070 sampling Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- -1 Silicon carbide metal oxide Chemical class 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention relates to the field of integrated circuits, in particular to a through-current aging testing device for a silicon carbide MOS tube diode. The device is characterized by comprising a constant current loop and an adjusting unit, wherein at least two SiC MOSFET body diode through-current aging units are connected in series on the constant current loop, and the constant current loop is used for providing rated direct current for the SiC MOSFET body diode through-current aging units. The SiC MOSFET body diode through-flow aging unit comprises a heat radiating device and a thermocouple, wherein the heat radiating device is used for being installed on one side of a tested device and used for radiating heat of the tested device, and the thermocouple is installed between the tested device and the heat radiating device and used for detecting the shell temperature of the tested device. The thermocouple and the heat radiator are both connected with the adjusting unit in an adapting way, the adjusting unit obtains the actual junction temperature of the measured device according to the shell temperature of the measured device, compares the actual junction temperature with the preset junction temperature, and adjusts the heat radiation efficiency of the heat radiator according to the comparison result. The rated electrical characteristics of the device can be truly reflected by adopting the test, and the test precision is high.
Description
Technical Field
The invention relates to the field of integrated circuits, in particular to a through-current aging testing device for a silicon carbide MOS tube diode.
Background
Silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs) have superior device characteristics compared with silicon-based insulated gate bipolar transistors (Si IGBTs) due to excellent material characteristics and structural characteristics, and the silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs) have higher application potential in the fields of new energy automobiles, photovoltaic power generation, rail transit and the like due to the fact that the silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs) have thinner chip thickness, higher working frequency, lower switching loss and the like under the same voltage withstand level. Unlike Si IGBTs, however, siC MOSFETs typically do not take the form of an extra packaged anti-parallel freewheeling diode, but rather freewheel using a body diode that is parasitic inside. Although compared with a silicon-based fast recovery diode (Si FRD) commonly used in Si IGBT, the body diode of the SiC MOSFET has the advantages of shorter reverse recovery time, smaller dynamic loss and the like. However, during the forward current flow, the interface defect on the SiC substrate is induced, so that the on-state voltage drop of the SiC substrate gradually increases with time, and on-state loss is further increased, which is called bipolar degradation of the body diode. Therefore, in the reliability checking process of the SiC MOSFET, the body diode through-current aging test of the SiC MOSFET should be performed without paying attention to only the gate reliability, the high-temperature reliability, the power cycle reliability, and the like of the SiC MOSFET.
At present, the current aging mode of the body diode of the SiC MOSFET is to apply a test environment temperature by using a high-temperature oven, correspondingly reduce test current according to initial conditions, adjust steady-state heat balance and then apply pulse current. However, this type of method has three problems, the first is that the device under test does not operate at the rated current, and the applied electrical stress cannot truly reflect the rated electrical characteristics of the device. The second problem is that a high temperature oven is required to provide the test environment temperature, and the energy consumption is high. The third problem is that the difference of power consumption caused by different voltage changes of different devices in the checking process of the devices is not considered, and the heat balance adjustment of the tested devices is not implemented, so that the checking junction temperature of the tested devices is inaccurate, and the testing precision is affected.
Disclosure of Invention
The invention aims to solve the problem of providing a silicon carbide MOS tube diode through-flow aging test device, which can truly reflect the rated electrical characteristics of a device and has high test precision.
In order to solve the problems, the following technical scheme is provided:
the invention relates to a silicon carbide MOS (metal oxide semiconductor) diode through-current aging test device which is characterized by comprising a constant-current loop and an adjusting unit, wherein at least two SiC MOSFET body diode through-current aging units are connected in series on the constant-current loop, and the constant-current loop is used for providing rated direct current for the SiC MOSFET body diode through-current aging units. The SiC MOSFET body diode through-flow aging unit comprises a heat radiating device and a thermocouple, wherein the heat radiating device is used for being installed on one side of a tested device and used for radiating heat of the tested device, and the thermocouple is installed between the tested device and the heat radiating device and used for detecting the shell temperature of the tested device. The thermocouple and the heat radiator are both connected with the adjusting unit in an adapting way, the adjusting unit obtains the actual junction temperature of the measured device according to the shell temperature of the measured device, compares the actual junction temperature with the preset junction temperature, and adjusts the heat radiation efficiency of the heat radiator according to the comparison result.
The formula for obtaining the actual junction temperature of the tested device according to the shell temperature of the tested device is as follows:
T J ＝V SD.test I nom R THjc +T C
wherein T is J Indicating the actual junction temperature of the device under test, I nom Indicating the rated DC current, T C For the shell temperature of the device to be tested detected by the thermocouple, R THjc Is the junction-to-shell thermal resistance, i.e., the thermal resistance from the chip surface to the package housing.
The temperature acquisition instrument is used for obtaining the actual junction temperature of a measured device by adopting the temperature of the thermocouple and transmitting the actual junction temperature information to the junction temperature comparison circuit, the junction temperature comparison circuit is used for comparing the actual junction temperature with a preset junction temperature and transmitting a comparison result to the heat abstractor regulation circuit, the heat abstractor regulation circuit is used for regulating the heat abstractor according to the comparison result, when the actual junction temperature is higher than the preset junction temperature, the heat abstractor regulation circuit controls the heat abstractor to improve the heat abstractor, and when the actual junction temperature is lower than the preset junction temperature, the heat abstractor regulation circuit controls the heat abstractor to reduce the heat abstractor.
The SiC MOSFET body diode through-current aging unit comprises an input end, an output end, a protection unit and a grid negative pressure unit for driving a tested device, wherein the output end flows in direct current and is used for being connected with a source electrode of the tested device, and the output end flows out direct current and is used for being connected with a drain electrode of the tested device. The protection unit comprises a protection switch and a control module, the protection switch is connected between the output end and the output end, the control module detects the voltages at two ends of the tested device, when the voltages at two ends of the tested device are larger than the set voltage, the control module controls the protection switch to be closed, the tested device is short-circuited, and direct current flows through the input end and the output end through the switch.
The protection switch is a power switch tube, and the circulation capacity of the power switch tube is larger than that of the tested device.
The control module comprises a voltage sampling circuit, a comparison circuit and a grid control circuit, wherein the voltage sampling circuit is connected with the comparison circuit, the comparison circuit is connected with the grid control circuit, and the grid control circuit is connected with the grid of the power switch tube. The voltage sampling circuit is connected between the source electrode and the drain electrode of the tested device and is used for detecting the conduction voltage drop of the tested device and transmitting the conduction voltage drop to the comparison circuit, the comparison circuit is used for comparing the conduction voltage drop with the set voltage and transmitting the comparison result to the grid control circuit, and the grid control circuit is used for controlling the conduction and the closing of the power switch tube according to the comparison result.
The constant current loop comprises a direct current source, and the SiC MOSFET body diode through-current aging units are sequentially connected in series between two ends of the direct current source.
By adopting the scheme, the method has the following advantages:
the constant current loop of the silicon carbide MOS tube diode through-flow aging testing device is used for providing rated direct current for the SiC MOSFET tube diode through-flow aging unit, the SiC MOSFET tube diode through-flow aging unit comprises a heat radiating device and a thermocouple, the heat radiating device is arranged on one side of a tested device and used for radiating heat of the tested device, the thermocouple is arranged between the tested device and the heat radiating device and used for detecting the shell temperature of the tested device, the thermocouple and the heat radiating device are both connected with an adjusting unit in an adapting mode, the adjusting unit obtains the actual junction temperature of the tested device according to the shell temperature of the tested device, compares the actual junction temperature with the preset junction temperature, and adjusts the heat radiating efficiency of the heat radiating device according to a comparison result. The device for testing adopts the constant current loop to provide rated direct current, and the body diode of the device to be tested is in a working state of continuous forward conduction during testing, so that compared with a pulse mode, the direct current mode can better apply electric stress to the device to be tested, and the test result can truly reflect the rated electrical characteristics of the device. Meanwhile, as the body diode of the SiC MOSFET belongs to the PIN diode with parasitic structure, the power consumption is high under the condition of continuous working under the condition of higher rated current and higher conducting voltage under the condition of negative grid voltage, and the heating is obvious, the SiC MOSFET is used for realizing the heating by the power consumption of the tested device, and the junction temperature of the tested device is regulated by the heat consumption of the tested device and the heat dissipation device and the regulating unit, so that a high-temperature oven or other heating devices are not needed, and the energy is saved. In addition, each SiC MOSFET body diode through-flow aging unit is provided with a thermocouple and a heat dissipation device, so that corresponding heat balance adjustment can be implemented according to different conditions, the accuracy of the check junction temperature of the tested device is ensured, and the testing precision is high. And each SiC MOSFET body diode through-current aging unit independently operates, so that unified testing of a plurality of tested devices with different on-state voltage drops can be simultaneously realized.
Drawings
FIG. 1 is a flow chart of a through-current burn-in test of a SiC MOSFET body diode;
FIG. 2 is a schematic diagram of a device for through-current burn-in testing of a silicon carbide MOS transistor body diode according to the present invention;
fig. 3 is a schematic structural diagram of a SiC MOSFET body diode through-current burn-in unit in the silicon carbide MOS body diode through-current burn-in test apparatus of the present invention.
Detailed Description
In the reliability assessment of power devices, it is often necessary to apply stresses in both electrical and thermal aspects. Under the examination of two stresses with a longer duration, the aging of the tested device is accelerated. And by comparing the change of the characteristic parameters of the device before and after the examination and in the process, the reliability test result of the device is judged, the expected service life of the device is obtained in a short time, and the flow of the through-flow aging test of the SiC MOSFET body diode is shown in a figure 1. During the through-current aging test of the SiC MOSFET body diode, the normal-temperature and high-temperature static characteristics of the tested SiC MOSFET are required to be tested before and after the test, and the normal-temperature on-state voltage drop V of the body diode under the conditions of rated current and negative pressure of an operating grid is recorded SD.Typical And a high temperature on-state pressure drop V SD.HT And on-resistance R of SiC MOSFET DS(on) And the steady-state thermal resistance R of the junction-shell thermal resistance thereof THjc . In the process, the on-state voltage V of the body diode of the tested device needs to be monitored in real time SD.test . After the test time is reached, V of the tested device is compared SD.Typical ，V SD.HT ，R DS(on) And determining whether or not bipolar degradation and the degree of degradation of the device occur.
The invention is described in further detail below in connection with fig. 1 and 2.
As shown in fig. 2, the silicon carbide MOS transistor body diode through-current aging test device comprises a constant current loop and an adjusting unit, wherein at least two SiC MOSFET body diode through-current aging units are connected in series on the constant current loop, and the constant current loop is used for providing rated direct current for the SiC MOSFET body diode through-current aging units. The constant current loop contains a direct current source, and the SiC MOSFET body diode through-current aging units are sequentially connected in series between two ends of the direct current source.
The SiC MOSFET body diode through-flow aging unit comprises a heat radiating device and a thermocouple, wherein the heat radiating device is used for being installed on one side of a tested device and used for radiating heat of the tested device, and the thermocouple is installed between the tested device and the heat radiating device and used for detecting the shell temperature of the tested device. The temperature acquisition instrument is used for obtaining the actual junction temperature of a tested device by adopting the temperature of the thermocouple, transmitting the actual junction temperature information to the junction temperature comparison circuit, comparing the actual junction temperature with a preset junction temperature, transmitting a comparison result to the heat radiator adjustment circuit, and adjusting the heat radiator according to the comparison result. The formula for obtaining the actual junction temperature of the tested device according to the shell temperature of the tested device is as follows: t (T) J ＝V SD.test I nom R THjc +T C
Wherein T is J Indicating the actual junction temperature of the device under test, I nom Indicating the rated DC current, T C For the shell temperature of the device to be tested detected by the thermocouple, R THjc Is the junction-to-shell thermal resistance, i.e., the thermal resistance from the chip surface to the package housing.
In this embodiment, the heat dissipating device is a fan, the heat dissipating device adjusting circuit is a fan rotation speed adjusting circuit, and specific structures of the temperature acquisition device, the junction temperature comparison circuit and the fan rotation speed adjusting circuit are all conventional technical means for those skilled in the art, and are not described herein.
As shown in fig. 3, the SiC MOSFET body diode through-current aging unit includes an input terminal, an output terminal, a protection unit, and a gate negative voltage unit for driving the device under test, where the output terminal is connected to the source of the device under test and the output terminal is connected to the drain of the device under test. The protection unit comprises a protection switch and a control module, the protection switch is connected between the output end and the output end, the control module detects the voltages at two ends of the tested device, when the voltages at two ends of the tested device are larger than the set voltage, the control module controls the protection switch to be closed, the tested device is short-circuited, and direct current flows through the input end and the output end through the switch. The control module comprises a voltage sampling circuit, a comparison circuit and a grid control circuit, wherein the voltage sampling circuit is connected with the comparison circuit, the comparison circuit is connected with the grid control circuit, and the grid control circuit is connected with the grid of the power switch tube. The voltage sampling circuit is connected between the source electrode and the drain electrode of the tested device and is used for detecting the conduction voltage drop of the tested device and transmitting the conduction voltage drop to the comparison circuit, the comparison circuit is used for comparing the conduction voltage drop with the set voltage and transmitting the comparison result to the grid control circuit, and the grid control circuit is used for controlling the conduction and the closing of the power switch tube according to the comparison result. The protection switch is a power switch tube, and the circulation capacity of the power switch tube is larger than that of the tested device. In this embodiment, the power switch is a silicon-based metal oxide semiconductor field effect transistor (Si MOSFET).
In this embodiment, the specific structures of the gate negative voltage unit, the voltage sampling circuit, the comparison circuit and the gate control circuit are all conventional technical means for those skilled in the art, and are not described herein again.
The invention is realized by adopting a direct current power-up mode. The tested devices are connected in series, and a constant-current direct-current source is used for outputting rated current, so that the body diode of each tested device is in a working state of continuous forward conduction. Compared with a pulse mode, the direct current mode can better apply electric stress to the tested device and reduce the requirement on a current source.
As a reliability test device, the apparatus needs to be operated continuously for several tens of hours, even several hundreds of hours, and must be equipped with a fail-safe device. The invention connects a silicon-based metal oxide semiconductor field effect transistor (Si MOSFE) with larger current capacity in parallel to each independent tested deviceT) is used as a protection device, and failure devices are processed in time through circuit control, so that the influence on the continuous check of other normal tested devices is avoided. Specifically, the device under test V is obtained by voltage sampling SD.test When the comparison signal is larger than the set upper limit value, the comparison signal feedback is triggered, the parallel Si MOSFET is conducted, the invalid tested device is further shorted, the test subunit is shorted from the main test circuit, on one hand, the damage degree of the invalid device is prevented from being further aggravated, and the feasibility of device failure analysis is reserved. On the other hand, the continuous operation of the test item is not influenced.
For thermal stress in the SiC MOSFET body diode current aging test process, the invention utilizes the self power consumption of the tested device to realize heating. Because the body diode of the SiC MOSFET belongs to a PIN diode with parasitic structure, the on voltage under the rated current and the negative voltage of the grid is higher, the power consumption is large under the continuous working state, and the heating is obvious. Therefore, the invention does not need to adopt a high-temperature oven or other heating devices, and adjusts the test junction temperature by utilizing the self heat consumption and matching with a heat dissipation device.
The silicon carbide MOS tube diode through-flow aging testing device has the advantages that:
1. by adopting an independent temperature regulation mode, according to the device characteristics of each device to be tested, different heat dissipation devices are matched, thermocouple temperature measurement and steady-state thermal resistance calculation are utilized, the check temperature change of each device is accurately controlled and recorded in a closed loop feedback mode, and the thermal stress precision of the test is improved.
2. The mode of matching the main test circuit with the sub-test unit is adopted, so that unified test of a plurality of tested devices with different on-state voltage drops can be realized simultaneously. And the device is easy to expand, and the negative voltage and the test junction temperature of the grid electrodes of different tested devices can be adjusted according to actual requirements. Meanwhile, the independent test subunits keep a distance from each other, so that the mutual influence in the test process is avoided.
3. The parallel power switch tube realizes the protection of the failure device and the main test circuit, not only maintains the damaged state of the tested failure device, but also ensures the long-term reliable operation of the test equipment, and the overall test is not affected by the damage of the individual tested device.
Claims (7)
1. The device is characterized by comprising a constant current loop and an adjusting unit, wherein at least two SiC MOSFET body diode through-current aging units are connected in series on the constant current loop, and the constant current loop is used for providing rated direct current for the SiC MOSFET body diode through-current aging units; the SiC MOSFET body diode through-flow aging unit comprises a heat radiating device and a thermocouple, wherein the heat radiating device is arranged on one side of a tested device and used for radiating heat of the tested device, and the thermocouple is arranged between the tested device and the heat radiating device and used for detecting the shell temperature of the tested device; the thermocouple and the heat radiator are both connected with the adjusting unit in an adapting way, the adjusting unit obtains the actual junction temperature of the measured device according to the shell temperature of the measured device, compares the actual junction temperature with the preset junction temperature, and adjusts the heat radiation efficiency of the heat radiator according to the comparison result.
2. The silicon carbide MOS transistor body diode through-current burn-in apparatus of claim 1, wherein the formula for obtaining the actual junction temperature of the device under test from the shell temperature of the device under test is: t (T) J ＝V SD.test I nom R THjc +T C Wherein T is J Indicating the actual junction temperature of the device under test, I nom Indicating the rated DC current, T C For the shell temperature of the device to be tested detected by the thermocouple, R THjc Is the junction-to-shell thermal resistance, i.e., the thermal resistance from the chip surface to the package housing.
3. The silicon carbide MOS tube diode through-flow aging test device according to claim 1, wherein the adjusting unit comprises a temperature acquisition instrument, a junction temperature comparison circuit and a heat dissipating device adjusting circuit, the thermocouple is connected with the temperature acquisition instrument, the temperature acquisition instrument is connected with the junction temperature comparison circuit, the junction temperature comparison circuit is connected with the heat dissipating device adjusting circuit, the heat dissipating device adjusting circuit is connected with the heat dissipating device, the temperature acquisition instrument is used for obtaining the actual junction temperature of a tested device by adopting the temperature of the thermocouple and transmitting the actual junction temperature information to the junction temperature comparison circuit, the junction temperature comparison circuit is used for comparing the actual junction temperature with a preset junction temperature and transmitting the comparison result to the heat dissipating device adjusting circuit, the heat dissipating device adjusting circuit is used for adjusting the heat dissipating efficiency of the heat dissipating device according to the comparison result, when the actual junction temperature is higher than the preset junction temperature, the heat dissipating device adjusting circuit controls the heat dissipating device to improve the heat dissipating efficiency, and when the actual junction temperature is lower than the preset junction temperature, the heat dissipating device adjusting circuit controls the heat dissipating device to reduce the heat dissipating efficiency.
4. The silicon carbide MOS transistor body diode through-current aging test device according to claim 1, wherein the SiC MOSFET body diode through-current aging unit comprises an input end, an output end, a protection unit and a grid negative voltage unit for driving a device to be tested, wherein the output end flows in direct current and is used for being connected with a source electrode of the device to be tested, and the output end flows out direct current and is used for being connected with a drain electrode of the device to be tested; the protection unit comprises a protection switch and a control module, the protection switch is connected between the output end and the output end, the control module detects the voltages at two ends of the tested device, when the voltages at two ends of the tested device are larger than the set voltage, the control module controls the protection switch to be closed, the tested device is short-circuited, and direct current flows through the input end and the output end through the switch.
5. The silicon carbide MOS transistor body diode through-current burn-in apparatus of claim 1, wherein the protection switch is a power switch transistor, and the power switch transistor has a flow capacity greater than that of the device under test.
6. The silicon carbide MOS transistor body diode through-current burn-in apparatus according to claim 5, wherein the control module comprises a voltage sampling circuit, a comparison circuit and a gate control circuit, the voltage sampling circuit is connected with the comparison circuit, the comparison circuit is connected with the gate control circuit, and the gate control is connected with the gate of the power switch tube; the voltage sampling circuit is connected between the source electrode and the drain electrode of the tested device and is used for detecting the conduction voltage drop of the tested device and transmitting the conduction voltage drop to the comparison circuit, the comparison circuit is used for comparing the conduction voltage drop with the set voltage and transmitting the comparison result to the grid control circuit, and the grid control circuit is used for controlling the conduction and the closing of the power switch tube according to the comparison result.
7. The device for through-current aging of silicon carbide MOS transistor body diodes according to any one of claims 1 to 6, wherein the constant current loop comprises a direct current source, and the SiC MOSFET body diode through-current aging units are sequentially connected in series between two ends of the direct current source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311577841.4A CN117572188A (en) | 2023-11-23 | 2023-11-23 | Silicon carbide MOS tube diode through-flow aging testing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311577841.4A CN117572188A (en) | 2023-11-23 | 2023-11-23 | Silicon carbide MOS tube diode through-flow aging testing device |
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|---|---|
| CN117572188A true CN117572188A (en) | 2024-02-20 |
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| CN202311577841.4A Pending CN117572188A (en) | 2023-11-23 | 2023-11-23 | Silicon carbide MOS tube diode through-flow aging testing device |
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- 2023-11-23 CN CN202311577841.4A patent/CN117572188A/en active Pending
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