KR20110032171A - System and method for measuring efficiency in semiconductor device - Google Patents

Abstract

PURPOSE: A system and a method for measuring efficiency in semiconductor device are provided to easily identify the relationship between element characteristic and the life cycle according to the usage time. CONSTITUTION: A loader(1) loads the power semiconductor device to be measured. The measurement modules(10-40) are connected to both ends of the loader to measure the current per voltage based on the particular temperature of the power semiconductor device. A main processor module(50) continuously receives the voltage comparison current. The accumulated final data is outputted.

Description

System and method for measuring efficiency in semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to the prediction of the lifespan of semiconductor devices. In particular, it is possible to more accurately measure the leakage current which is closely related to the lifespan of semiconductor devices, and to easily determine the relationship between device characteristics and lifespan according to usage time. A performance measurement system and method.

The semiconductor device of the power conversion circuit is made of silicon or silicon carbide. Devices made of silicon carbide are currently under development, and most are still made of silicon.

These devices fall into three broad categories: power diodes, transistors, and thyristors.

Schottky diodes, one of the power diodes, have low on-state voltages and typically have very short recovery times in [ns]. Also, in Schottky diodes, leakage current increases with rated voltage, and the rating is limited to 100 [V], 300 [A].

In the case of self-extinguishing semiconductor switching devices (MOSFETs, IGBTs, etc.) capable of high-speed switching as power semiconductor devices, they are applied to power conversion and control around frequencies of several tens of [kHz] to hundreds of [kHz]. In particular, it is attracting attention in the field of power application engineering technology.

Switching elements used in power conversion circuits require high withstand voltage, high current and low loss, high speed switching characteristics. In order to satisfy these characteristics, the switching frequency characteristic of the device itself must be high speed.

Insulated Gate Bipolar Transistor (IGBT), which is known to be advantageous for high current and high voltage by combining the best characteristics of BJT and MOSFET among practical power semiconductor devices, has a switching frequency of several tens of kHz and a simple driving circuit and high-speed switching. There is this.

As IGBT modules have recently been in the spotlight as power semiconductor devices, they have been widely used in transportation equipment such as locomotives, elevators, cable cars, and subways. However, there are many difficulties in predicting the life of power semiconductor devices in the equipment operation. In other words, the use time for the various conditions is not described, and thus there are many difficulties in operation due to the future of the IGBT module.

Moreover, the reality is that the manufacturers of power semiconductors have not completed the research on the reliability of the IGBT module so far, and thus the manufacturer's reliability test is avoided. It can cause damage to the equipment and the operation and maintenance of the equipment.

As a result, it is required to measure the change of device characteristics according to the usage time and the change of device characteristics according to the conditions required for the life expectancy of power semiconductor devices such as IGBTs. There is a need for a means to do this.

SUMMARY OF THE INVENTION The present invention has been made in view of the above, and makes it easy to predict the lifespan of power semiconductor devices by measuring voltage-current characteristics that change with temperature changes for various semiconductor devices including power semiconductor devices. The present invention provides a system and method for measuring performance of semiconductor devices.

Another object of the present invention is to provide a system and method for measuring performance of a semiconductor device, which makes it easy to predict the life of the power semiconductor device by measuring the amount of leakage current with respect to an applied voltage according to a temperature change of the power semiconductor device.

It is still another object of the present invention to provide a system and method for measuring performance of a semiconductor device that facilitates predicting the life of the power semiconductor device by measuring a change in leakage current according to a change in applied voltage with respect to the power semiconductor device. have.

Another object of the present invention is to measure the change in the leakage current amount according to the change in the applied voltage for the unused power semiconductor device, and also to measure the change in the leakage current amount according to the change in the applied voltage for the used power semiconductor device. It is an object of the present invention to provide a system and method for measuring the performance of a semiconductor device that facilitates predicting the lifetime of the power semiconductor device according to the usage time.

Features of the performance measurement system of a semiconductor device according to the present invention for achieving the above object, a loader for loading a power semiconductor device to be measured (Loader); N measurement modules connected to both ends of the loader to measure the current versus voltage based on a specific temperature of the power semiconductor device; A main processor module for continuously receiving and accumulating the current versus the voltage measured by the N measuring modules, and outputting the accumulated final data; And a data output device for generating and displaying a graph of voltage-current characteristics of the power semiconductor device measured at the temperature by using the final data received from the main processor module.

Features of the method for measuring the performance of a semiconductor device according to the present invention for achieving the above object comprises the steps of: loading a power semiconductor device to be measured; Applying a voltage from a base voltage to a threshold voltage based on a specific temperature and a current corresponding to both ends of the power semiconductor device; Measuring a current versus voltage of the power semiconductor device from the applied voltage and current; Continuously accumulating current relative to the measured voltage; By using the accumulated data, to predict the life of the power semiconductor device, the step of outputting the voltage-current characteristics according to the temperature change of the power semiconductor device.

According to the present invention, various power semiconductor devices including an IGBT, a silicon controlled rectifier (SCR) module, an intelligent power module (IPM), a gate turn-off thyristor (GTO), an integrated gate committed thyristor (IGCT), a diode, a MOSFET, and the like Since the leakage current compared to the applied voltage according to the temperature change is measured and output, the characteristic change of the power semiconductor device can be easily observed from the output data, and thus the life of the power semiconductor device can be predicted.

The life prediction of these devices is easy to apply to the power semiconductor devices used for a certain period of time, which helps to prepare an analysis data on the replacement time of the used devices or general device life.

In addition, in the present invention, by providing a means for adjusting the device temperature as a measurement condition for the device, since the measurement is performed in the environment in which the actual device operates, it is possible to measure the amount of leakage current more accurately compared to the applied voltage. This allows for more accurate life prediction of the device.

In addition, in the present invention, since all or some of the various measurement modules prepared in consideration of the voltage characteristics of the device can be operated, that is, the voltage can be flexibly applied from the base voltage to the maximum threshold voltage. Allows you to measure the amount of leakage current against the applied voltage.

Other objects, features and advantages of the present invention will become apparent from the detailed description of the embodiments with reference to the accompanying drawings.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a configuration and an operation of an embodiment of the present invention will be described with reference to the accompanying drawings, and the configuration and operation of the present invention shown in and described by the drawings will be described as at least one embodiment, The technical idea of the present invention and its essential structure and action are not limited.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the performance measuring system and method of the semiconductor device according to the present invention.

1 is a block diagram showing the configuration of a performance measurement system of a semiconductor device according to the present invention.

Referring to FIG. 1, the system of the present invention includes a device including components 1, 10, 20, 30, and 40 for measuring characteristics of a power semiconductor device, and outputs a graph of the measured characteristics. It consists of a data output device (60). Here, an example of the data output device 60 may be a personal computer.

The apparatus for measuring the characteristics of the power semiconductor device is composed of a loader (1), the N measuring modules (10, 20, 30, 40) and the main processor module (50).

The loader 1 is a means for loading a power semiconductor element to be measured, and it is preferable to connect an input terminal and an output terminal of the power semiconductor element to both ends of the loader 1.

The N measurement modules 10 to 40 are connected to both ends of the loader 1 like the power semiconductor elements to be measured. In particular, the N measurement modules 10 to 40 are connected to each other in series, and measures the current versus the voltage based on a specific temperature for the power semiconductor device loaded in the loader (1).

On the other hand, the loader 1 is provided with a heating means (not shown) for providing a specific temperature as a condition when measuring the current versus voltage of the power semiconductor device to be measured, the heating means is a power semiconductor device to be measured After is loaded, it provides an environment corresponding to the specified temperature as the measurement condition. For example, the heating means heats the power semiconductor elements loaded in the loader 1 so that the N measurement modules 10 to 40 measure the current versus the voltage of the power semiconductor elements based on the heated temperatures. Match it.

In the present invention, as a power semiconductor device, IGBT, silicon controlled rectifier (SCR) module, intelligent power module (IPM), gate turn-off thyristor (GTO), integrated gate committed thyristor (IGCT), DIODE, MOSFET, etc. are measured. The degree of change of leakage current with the change of voltage at their heated temperature is measured.

In the case of the IGBT of the power semiconductor device, the leakage current between the emitter and the collector according to the voltage change when the gate is turned off is measured. In particular, the change in the amount of leakage current according to the temperature change is measured.

The main processor module 50 continuously receives and accumulates current versus voltage measured by the N measurement modules 10 to 40 for power semiconductor devices heated to a specific temperature. Subsequently, the accumulated final data is output to the data output device 60 connected through a universal serial bus (USB).

The data output device 60 continuously receives current versus voltage from the main processor module 50 through USB, and uses the final data received, that is, the voltage-current characteristic by using a change amount of leakage current for each voltage based on a specific temperature. Create and display a graph. In particular, the data output device 60 may be a personal computer, and the data output device 60 may be a personal mobile communication phone or a personal data assistant.

The data output device 60 has an application for generating a data voltage-current characteristic graph received from the main processor module 50, and the application also has a display device for displaying the generated voltage-current characteristic graph. do. Display examples of such voltage-current characteristic graphs are shown in FIGS. 4 and 5.

The N measurement modules 10 to 40 are the first measurement module 10, the second measurement module 20, the third measurement module 30, and the fourth measurement module 40 as illustrated in FIG. 2. It is preferable that it consists of four, including.

When the both ends of the loader 1 is divided into a first end and a second end, one end of the first measurement module 10 of the N measurement modules 10 to 40 is connected to the first end of both ends of the loader 1. In this order, one end of the N-th measurement module 40, which is the last measurement module, is preferably connected to the second end of both ends of the loader 1. The first to N measurement modules 10 to 40 are preferably connected in series. Thus, as shown in Fig. 1, it is preferable that the first to N measurement modules 10 to 40 connected in series are connected to both ends of the loader to form one closed loop.

 In detail, as in the case of FIG. 2, one end (+ end) of the first measurement module 100 is one end of both ends of the loader 1 in the case of the four measurement modules 100 to 400. The other end of the first measurement module 100 is connected to one end (+ end) of the second measurement module 200, and the other end of the second measurement module 200 is connected to the other end of the second measurement module 200. One end (+ end) of the third measurement module 300, the other end (− end) of the third measurement module 300 is connected to one end (+ end) of the fourth measurement module 400, and 4 The other end (-end) of the measurement module 400 may be connected to the other end (-end) of both ends of the loader (1).

Meanwhile, the N measurement modules 10 to 40 are analog controllers each having the same internal configuration, and the internal configuration is as shown for the first measurement module 10.

The first measurement module 10 includes a converter 11, a voltage controller 12, a sensing unit 13, and a first processor 14.

The converter 11 converts the power supply 2 and outputs a supply voltage.

The voltage controller 12 applies the voltage to the loader 1 in a range from the base voltage (0 volts) to the threshold voltage according to the voltage control of the supply voltage output from the converter 11. By way of example, the voltage controller 12 applies a voltage and thus a current in a range from a base voltage of 0 volts to a threshold voltage of 1000 volts. For example, in the case where the four measurement modules 10 to 40 are connected in series, as shown in FIG. 2, the voltage is also applied to both ends of the loader 1 in the range of 0 to 4000 volts. Can be applied.

The sensing unit 13 detects a current versus a voltage of the power semiconductor device from the voltage and current applied by the voltage controller 12. In fact, the sensing unit 13 measures the leakage current flowing through the power semiconductor device to be measured at the voltage applied by the voltage control unit 12. Accordingly, the sensing unit 13 detects how much of the current applied according to the change in voltage flows from the input terminal of the power semiconductor device (off state) to the output terminal.

The first processor 14 is connected to the main processor module 50 through an RS232 port. The first processor 14 receives a control command for voltage control from the main processor module 50 through the RS232 port, and also detects the voltage detected by the sensing unit 13 by the main processor module 50 through the RS232 port. Contrast current is delivered continuously.

The first processor 14 performs voltage control on the voltage controller 12 according to a control command of the main processor module 50.

The main processor module 50 performs on / off operation control on at least one of the N measurement modules 10 to 40 according to the threshold operating voltage (breakdown voltage) of the power semiconductor device to be measured. The main processor module 50 sequentially turns on the N measurement modules 10 to 40 according to the takeover operation voltage (breakdown voltage) of the power semiconductor device. That is, since each of the N measurement modules 10 to 40 may apply a voltage up to 1000 volts, the main processor module 50 may be configured to have a first voltage when the threshold operation voltage (breakdown voltage) of the power semiconductor device is less than 1000 volts. Only the measurement module 10 is turned on, and if the threshold operating voltage (breakdown voltage) of the power semiconductor device is less than 2000 volts, only the first to second measurement modules 10 to 20 are turned on, and the threshold operating voltage (breakdown voltage) of the power semiconductor device is Is less than 3000 volts, only the first to third measurement modules 10 to 30 are turned on, and if the threshold operating voltage (breakdown voltage) of the power semiconductor device is less than N * 1000 volts, the first to N measurement modules 10 to 40 are Turn on.

For example, the main processor module 50 transmits a control command for voltage control only to the first to second measurement modules 10 to 20 when the threshold operation voltage (breakdown voltage) of the power semiconductor device is 1500 volts, thereby providing a specific temperature. Continuously receives and accumulates current versus voltage measured by the first to second measurement modules 10 to 20 for the power semiconductor devices heated to. At this time, the main processor module 50 turns off the operation of the third to N measurement modules 30 to 40 by not transmitting control commands for voltage control to the third to N measurement modules 30 to 40.

FIG. 2 is a diagram illustrating an internal detailed configuration of a measurement module in the configuration of a performance measurement system of a semiconductor device according to an embodiment of the present disclosure, and illustrates an example in which four measurement modules are configured. 3 is a diagram illustrating a performance measurement procedure of a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 2, the four measurement modules 100 to 400 are connected to both ends of the loader 1 like the power semiconductor elements to be measured. In particular, the four measurement modules 100 to 400 are connected in series to each other, and measure the current versus voltage based on a specific temperature for the power semiconductor device loaded in the loader 1.

Each of the four measurement modules 100 to 400 has the same components, and the components include a converter 110, a voltage controller 120, a sensor 130, and a first processor 140.

The converter 110 converts the supply power and outputs a supply voltage. In the present invention, a high frequency voltage is used as the supply power. For example, 300 volts at 20 kHz is used as the power supply. The converter 110 boosts the power supply to output a supply voltage of 1500 volts.

The voltage controller 120 converts a supply voltage of 1500 volts output from the converter 110 into a voltage range from a base voltage (0 volts) to a threshold voltage of 1000 volts according to the voltage control. To apply. The output voltage of the voltage controller 120 is controlled by the first processor 140, and the first processor 140 performs voltage control on the voltage controller 120 according to a control command of the main processor module 500. .

As a result, when the main processor module 500 transmits a control command for voltage control to all four measurement modules 100 to 400, the main processor module 500 may have a total base voltage of 0 to 4000 volts at both ends of the loader 1. The voltage can also be applied with a current of 1 mA accordingly.

The sensing unit 130 detects a current versus voltage of the power semiconductor device from the voltage and current applied by the voltage controller 120. As described above, the sensing unit 130 actually measures the leakage current flowing through the power semiconductor device to be measured at the voltage applied by the voltage control unit 120, and accordingly measures the voltage V and the leakage current I as the first processor. Output to 140. This means that the sensing unit 130 senses how much of the current applied according to the change of the voltage flows from the input terminal of the power semiconductor device (off state) to the output terminal and outputs it to the first processor 140.

The first processor 140 receives a control command for voltage control from the main processor module 500 through the RS232 port, and the first processor 140 senses the main processor module 500 through the RS232 port. Continuously delivers the current compared to the voltage sensed at 130.

The main processor module 500 continuously receives and accumulates current versus voltage measured by at least one of the four measurement modules 100 to 400 for a power semiconductor device heated to a specific temperature. Subsequently, the accumulated final data is output to the data output apparatus 600 connected through USB.

The data output device 600 continuously receives the current versus voltage from the main processor module 500 through the USB, and uses the final data received, that is, the voltage-current characteristic by using the leakage current variation for each voltage based on a specific temperature. Create and display a graph.

Meanwhile, the main processor module 500 performs on / off operation control on at least one of the four measurement modules 100 to 400 according to the threshold operating voltage (breakdown voltage) of the power semiconductor device. The details are omitted here.

If the measurement target is an IGBT among the power semiconductor devices, the leakage current between the emitter and the collector is measured when the gate is turned off. In particular, after the IGBT is heated to a specific temperature in advance, the leakage current is measured, thereby measuring the change in the amount of leakage current according to the temperature change.

Next, a procedure for measuring performance of a semiconductor device based on the configuration of FIGS. 1 and 2 will be described with reference to FIG. 3.

First, by loading the power semiconductor device to be measured in the loader 1, the input terminal and the output terminal of the power semiconductor device is connected to both ends of the loader (S10). At this time, it is preferable to heat the power semiconductor element to a specific temperature before or after loading the power semiconductor element to the loader 1. For example, the power semiconductor device can be heated to a temperature of any one of 25 ℃ to 50 ℃.

Subsequently, a voltage from a base voltage to a threshold voltage based on a specific temperature (25 or 50 ° C.) and a corresponding current are applied to both ends of the power semiconductor device (S20). That is, a voltage from the base voltage of 0 volts to the maximum threshold voltage of 4000 volts and corresponding thereto at both ends of the power semiconductor element heated to a specific temperature (25 or 50 ° C.) by at least one of the four measurement modules 100 to 400. Apply 1mA of current.

Subsequently, the voltage versus current of the power semiconductor device is continuously measured from the applied voltage and current (S30). In detail, the amount of change in the leakage current flowing between the input terminal and the output terminal of the power semiconductor element is measured according to the change of the voltage applying the current. In this case, in the case of the IGBT, it is preferable to measure the leakage current between the input terminal (collector) and the output terminal (emitter) when the IGBT is turned off from the applied voltage and current.

Then, the current is continuously accumulated over the measured voltage (S40). The main processor module 500 preferably accumulates the measured amount of the leakage current according to the change of the applied voltage until the threshold operation voltage (breakdown voltage) of the power semiconductor device is reached.

Subsequently, the data output apparatus 600 receiving the accumulated final data generates and outputs voltage-current characteristic data for predicting the life of the power semiconductor device to be measured using the accumulated final data. That is, after receiving the final data accumulated in the main processor module 500, the data output device 600 generates a graph showing the voltage-current characteristics according to the temperature change of the power semiconductor device using the same (S50). The graph is displayed (S51).

Examples according to the systems and methods herein described are described below.

For example, when measuring 500 [A] class IGBTs used for a certain time or measuring 500 [A] class IGBTs that have never been used, leakage due to voltage change after heating the IGBT to 25 ° C After measuring the current change amount and heating the IGBT to 50 ℃, it is possible to measure the change in leakage current according to the voltage change. In this case, the long-used IGBT shows stable leakage current characteristics at 25 ° C., but the leakage current rapidly increases when a low voltage is applied at 50 ° C. In particular, the increase in leakage current increases near the breakdown voltage. New unused IGBTs, on the other hand, exhibit generally stable leakage currents at both 25 ° C and 50 ° C, ie regardless of temperature.

4 to 5 are graphs showing the results of measuring the current versus voltage based on a specific temperature of the IGBT of the power semiconductor device according to an embodiment of the present invention, Figure 4 is a 500 [A] class IGBT used for 2 years 25 Figure 5 is a graph showing the amount of change in leakage current measured by varying the voltage at ℃ and 50 ℃, respectively, Figure 5 is a new IGBT 50 [A] class that has never been used while measuring the voltage at 25 ℃ and 50 ℃ respectively It is a graph showing the amount of change in leakage current.

As shown in FIG. 4, the long-used IGBT shows stable leakage current characteristics even at a voltage change at 25 ° C., but the leakage current rapidly increases from an initial voltage at 50 ° C. FIG.

In addition, as shown in Figure 5, the new IGBT that has never been used in the measurement results shows a stable leakage current characteristics even in the voltage changes at 25 ℃ or 50 ℃.

Thus, by measuring the current versus the voltage based on the specific temperature of the power semiconductor device using the system and method of the present invention, it is possible to predict the life of the power semiconductor device. That is, by measuring the leakage current in the off state of the power semiconductor device through the system and method of the present invention, it is possible to predict the thermal carrier proliferation that causes the error or malfunction of the power semiconductor device, and based on the prediction Enable prediction

The reason for the life prediction of the power semiconductor device is that IGBT, DIODE, MOSFET, etc. are very vulnerable to the avalanche of the deteriorated carrier of the element, and thermal carrier propagation is due to semiconductor contamination. It is well known that this is the main cause. In addition, thermal carrier propagation is closely related to the temperature of the device and the leakage current when the device is turned off and occurs only when the internal temperature of the device rises. In addition, the leakage current is determined by the internal temperature of the device and the degree of contamination of the implanted ions. At low temperatures, the leakage current is insufficient, but at a high temperature, the leakage current varies rapidly according to the usage time of the device. Therefore, by measuring the amount of change in the leakage current compared to the voltage based on the temperature of the power semiconductor device, it is possible to confirm the change in the characteristic according to the use time.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention.

It is therefore to be understood that the embodiments of the invention described herein are to be considered in all respects as illustrative and not restrictive, and the scope of the invention is indicated by the appended claims rather than by the foregoing description, Should be interpreted as being included in.

1 is a block diagram showing the configuration of a performance measurement system of a semiconductor device according to the present invention.

2 is a diagram showing a detailed internal configuration of the measurement module of the configuration of the performance measurement system of the semiconductor device according to an embodiment of the present invention.

3 is a diagram illustrating a performance measurement procedure of a semiconductor device according to an embodiment of the present invention.

4 to 5 are graphs showing the results of measuring current versus voltage on the basis of a specific temperature of the IGBT of the power semiconductor device according to an embodiment of the present invention.

* Description of the symbols for the main parts of the drawings *

1: Loader 2: Supply Power

10, 100: first measurement module 11, 110: converter

12, 120: voltage control unit 13, 130: sensing unit

14, 140: first processor 20, 200: second measurement module

30, 300: third measurement module 40: Nth measurement module

400: fourth measurement module 50, 500: main processor module

60, 600: Data output device

Claims (16)

A loader for loading a power semiconductor device to be measured; N measurement modules connected to both ends of the loader to measure the current versus voltage based on a specific temperature of the power semiconductor device; A main processor module for continuously receiving and accumulating the current versus the voltage measured by the N measuring modules, and outputting the accumulated final data; And And a data output device for generating and displaying a graph of voltage-current characteristics of the power semiconductor device measured at the temperature by using the final data received from the main processor module. Measuring system. The system of claim 1, wherein the loader includes heating means for heating the power semiconductor element to the temperature. The system of claim 1, wherein an input terminal and an output terminal of the power semiconductor device are connected to both ends of the loader. The method of claim 1, wherein the N measurement module, A performance measuring system of a semiconductor device comprising a first measuring module, a second measuring module, a third measuring module, and a fourth measuring module. The method of claim 4, wherein One end of the first measurement module is connected to one of both ends of the loader, The first to fourth measurement modules are connected in series with each other, And the other end of the fourth measurement module is connected to the other end of both ends of the loader. The method of claim 4, wherein One end of the first measurement module is connected to one of both ends of the loader, The other end of the first measurement module is connected to one end of the second measurement module, The other end of the second measurement module is connected to one end of the third measurement module, The other end of the third measurement module is connected to one end of the fourth measurement module, And the other end of the fourth measurement module is connected to the other end of both ends of the loader. The method of claim 4, wherein each of the first to fourth measurement modules applies a voltage of 0 to 1000 volts to apply a total of 0 to 4000 volts and a corresponding current of 1 mA to both ends of the loader. A performance measuring system for a semiconductor device. The method of claim 1, wherein the N measurement modules, respectively A converter for converting a supply power to output a supply voltage; A voltage controller which applies the supply voltage output from the converter to the loader in a range from a base voltage to a threshold voltage according to voltage control; A sensing unit for sensing a current versus a voltage of the power semiconductor device from the voltage applied by the voltage control unit; And a processor configured to perform the voltage control on the voltage controller according to a control command of the main processor module and to provide the main processor module with a current compared to the voltage sensed by the sensing unit. Measuring system. The system of claim 8, wherein the power supply is a high frequency voltage. The method of claim 8, wherein the sensing unit, And detecting a leakage current value flowing from the input terminal of the power semiconductor device to the output terminal when the power semiconductor device is turned off from the voltage applied by the voltage controller. The method of claim 8, wherein the main processor module, And performing on / off operation control of at least one of the N measurement modules according to a threshold operating voltage (breakdown voltage) of the power semiconductor device. Loading a power semiconductor device to be measured; Applying a voltage from a base voltage to a threshold voltage based on a specific temperature and a current corresponding to both ends of the power semiconductor device; Measuring a current versus voltage of the power semiconductor device from the applied voltage and current; Continuously accumulating current relative to the measured voltage; And outputting a voltage-current characteristic according to a temperature change of the power semiconductor device to predict the life of the power semiconductor device by using the accumulated data. The method of claim 12, further comprising heating the loaded power semiconductor device to a specific temperature. The method of claim 12, wherein the step of measuring the current versus the voltage of the power semiconductor device from the applied voltage and current, And measuring a leakage current between an input terminal and an output terminal when the power semiconductor device is turned off from the applied voltage and current. The method of claim 12, wherein the outputting of the voltage-current characteristics according to the temperature change of the power semiconductor device, When the power semiconductor device is turned off, the leakage current change between the input terminal and the output terminal of the power semiconductor device according to the change of the applied voltage at the specific temperature outputs the voltage-current characteristics of the semiconductor device How to measure performance. The method of claim 15, wherein the voltage-current characteristic according to the temperature change is output as a graph.

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