CN117558841A - LED epitaxial wafer preparation method - Google Patents
LED epitaxial wafer preparation method Download PDFInfo
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- CN117558841A CN117558841A CN202311591938.0A CN202311591938A CN117558841A CN 117558841 A CN117558841 A CN 117558841A CN 202311591938 A CN202311591938 A CN 202311591938A CN 117558841 A CN117558841 A CN 117558841A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 28
- 230000007704 transition Effects 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 48
- 238000005286 illumination Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a preparation method of an LED epitaxial wafer, which sequentially comprises the following steps: sequentially epitaxially growing a buffer layer, an n-type semiconductor layer and an InGaN transition layer on a substrate; forming a plurality of pits on the surface of the InGaN transition layer by adopting plasma bombardment treatment; forming In nanodots on the pits; depositing an Al film layer; high-temperature annealing is adopted to enable the Al film to be coagulated into particles or spherical embedded into the pits; and epitaxially growing a multi-quantum well light-emitting layer and a P-type semiconductor layer to form the light-emitting diode with a complete structure. The method can remarkably improve the luminous efficiency and antistatic capability of the LED, and is beneficial to reducing forward voltage.
Description
Technical Field
The invention relates to the technical field of semiconductor chip manufacturing, in particular to a preparation method of an LED epitaxial wafer.
Background
As a semiconductor electronic device for converting electric energy into Light energy, a Light-Emitting Diode (LED) is widely used in the fields of lighting, cell phone/television backlight display, sterilization, etc. due to its characteristics of low operating voltage, small operating current, good shock resistance and vibration resistance, high reliability, long life, green environmental protection, etc.
With the vigorous development of the third-generation semiconductor technology, the semiconductor illumination has the advantages of energy conservation, environmental protection, high brightness, long service life and the like, and becomes the focus of social development. The GaN (gallium nitride) -based LED chip is the power of semiconductor illumination, and in recent years, the performance of the LED chip is greatly improved, the production cost is also continuously reduced, and the LED chip makes a remarkable contribution to the progress of semiconductor illumination into thousands of households. However, in order to accelerate sterilization and disinfection, high-end applications such as mobile phone/television backlight display, etc., the LED device needs to further improve the light efficiency, and how to further improve the light emitting efficiency of the LED chip is a hot subject of research in the field.
Therefore, providing a method for preparing an LED epitaxial wafer to improve the light emitting efficiency of an LED is a problem to be solved in the art.
Disclosure of Invention
The invention aims at: the LED epitaxial wafer manufacturing method has the advantages of simple process, high repeatability, low cost and easiness in large-scale production, and can remarkably improve the luminous efficiency and antistatic capability of an LED and be beneficial to reducing forward voltage.
The invention discloses a preparation method of an LED epitaxial wafer, which is characterized by comprising the following steps:
step one, desorbing a substrate in a hydrogen environment;
step two, sequentially epitaxially growing a buffer layer and an n-type semiconductor layer on the substrate;
step three, epitaxially growing an InGaN transition layer;
fourthly, carrying out plasma bombardment treatment on the surface of the InGaN transition layer to enlarge the distance between two adjacent lattices on the surface of the InGaN transition layer, and forming a plurality of pits on the surface of the InGaN transition layer;
step five, at N 2 Adjusting temperature and pressure In the atmosphere, and introducing TMIn to form In nanodots on the pits;
step six, depositing an Al film layer on the pit and InGaN transition layer, and controlling the temperature to gradually decrease in the process of depositing the Al film layer;
step seven, carrying out high-temperature annealing treatment on the Al film layer to enable the Al film to be coagulated into particles or spherical and embedded into the pits;
and step eight, epitaxially growing a multi-quantum well light-emitting layer and a P-type semiconductor layer to form the light-emitting diode with a complete structure.
Further, the substrate is a substrate suitable for epitaxial growth, such as sapphire, silicon carbide, gallium nitride and aluminum nitride.
Further, the buffer layer in the second step is an AlN buffer layer or a GaN buffer layer.
Further, the thickness of the InGaN transition layer in the third step is 40-200 nm.
Further, the pit has a length of 5-15 nm, a depth of 5-15 nm, and a distance between two adjacent pits is 5-20 nm.
Further, the adjusting the temperature and the pressure in the fifth step is further as follows:
the pressure is controlled to be 100-220 Torr, and the temperature is controlled to be 700-900 ℃.
Further, the specific process of depositing the Al film layer in the step six is as follows:
gradually reducing the temperature from 1100 ℃ to 800 ℃, controlling the pressure to be 100-200 Torr, and introducing TMAL and N 2 And depositing an Al film layer with the thickness of 2-7 nm.
Further, the temperature of the high-temperature annealing treatment in the step seven is 700-800 ℃.
Compared with the prior art, the preparation method of the LED epitaxial wafer has the following beneficial effects:
according to the method, the InGaN transition layer is introduced in front of the multi-quantum well light-emitting layer to inhibit indium segregation phenomenon in the multi-quantum well light-emitting layer, so that the separation degree of electron and hole wave functions caused by the Stark effect is reduced, and the internal quantum efficiency of the LED is improved.
According to the method, the surface of the InGaN transition layer is subjected to plasma bombardment treatment, so that the distance between two adjacent lattices on the surface of the InGaN transition layer is increased, lattice mismatch between the InGaN transition layer and the multi-quantum well luminescent layer can be reduced, the crystal growth quality of the multi-quantum well luminescent layer can be improved, and the luminous efficiency and antistatic capacity of the LED can be improved.
According to the method, the surface of the InGaN transition layer is formed into a plurality of tiny pits through plasma bombardment, in nano points are formed In the pits, fluctuation of In component distribution In the multi-quantum well layer can be adjusted, the number of quasi-quantum points of the light-emitting layer is increased, overlapping integration of electron and hole wave functions is improved, and the recombination efficiency of electrons and holes is improved, so that the luminous efficiency of an LED is improved. And then depositing an Al film layer, condensing the Al film layer into particles or spheres by high-temperature annealing, embedding the particles or spheres into the pits, improving the luminous efficiency of the LED by utilizing the good reflectivity of aluminum to light and high conductivity, promoting current diffusion, and reducing the forward voltage of the LED. The gradual temperature reduction is controlled in the process of depositing the Al film, so that the compactness and uniformity of the Al film are improved, the reflectivity and conductivity of Al can be improved, the luminous efficiency of the LED is further improved, and the voltage is reduced.
The method has the advantages of simple process, high repeatability, low cost and easy mass production, can remarkably improve the luminous efficiency and antistatic capability of the LED, and is beneficial to reducing forward voltage.
Of course, it is not necessary for any one product embodying the invention to achieve all of the technical effects described above at the same time.
Other features of the present invention and its advantages will become apparent from the following detailed description of exemplary embodiments of the invention, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 shows steps one to three of the method for preparing an LED epitaxial wafer according to the embodiment of the present application.
Fig. 2 shows a step four of the method for preparing an LED epitaxial wafer according to the embodiment of the present application.
Fig. 3 shows a fifth step of the method for preparing an LED epitaxial wafer according to the embodiment of the present application.
Fig. 4 shows a step six of the method for preparing an LED epitaxial wafer according to the embodiment of the present application.
Fig. 5 shows a step seven of the method for preparing an LED epitaxial wafer according to the embodiment of the present application.
Fig. 6 shows a step eight of the method for preparing an LED epitaxial wafer according to the embodiment of the present application.
Illustration of: 1. the semiconductor device comprises a substrate, 2, a buffer layer, 3, an n-type semiconductor layer, 4, an InGaN transition layer, 5, pits, 6, in nanodots, 7, an Al film layer, 9, an MgN coating layer, 10, a multiple quantum well light-emitting layer, 11 and a P-type semiconductor layer.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless it is specifically stated otherwise.
The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of exemplary embodiments may have different values.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
The preparation method of the LED epitaxial wafer in the embodiment comprises the following steps:
and 101, carrying out desorption treatment on the sapphire substrate 1 in a hydrogen environment.
Step 102, epitaxially growing a buffer layer 2 and an n-type semiconductor layer 3 on the sapphire substrate 1 in sequence.
Step 103, epitaxially growing an InGaN transition layer 4 with the thickness of 40-200 nm.
And 104, carrying out plasma bombardment treatment on the surface of the InGaN transition layer 4 to enlarge the distance between two adjacent lattices on the surface of the InGaN transition layer 4 and form a plurality of pits 5 on the surface of the InGaN transition layer 4, wherein the length of each pit 5 is 5-15 nm, the depth is 5-15 nm, and the distance between two adjacent pits 5 is 5-20 nm.
Step 105, at N 2 And under the atmosphere, controlling the pressure of the reaction chamber at 100-220 Torr, the temperature at 700-900 ℃, and introducing TMIn to form In nanodots 6 on the pits 5.
Step 106, controlling the temperature of the reaction chamber to gradually decrease from 1100 ℃ to 800 ℃, controlling the pressure to be 100-200 Torr, and introducing TMAL and N 2 And depositing a film layer 7 with the thickness of 2-7 nm Al on the pits 5 and the InGaN transition layer 4.
And 107, controlling the temperature of the reaction chamber to 700-800 ℃, and carrying out high-temperature annealing treatment on the Al film layer 7 to enable the Al film to be coagulated into particles or spherical and embedded into the pits 5.
Step 108, epitaxially growing the multi-quantum well luminous layer 8 and the P-type semiconductor layer 9 to form the light-emitting diode with a complete structure.
While certain specific embodiments of the invention have been described in detail by way of example, it will be appreciated by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (8)
1. The preparation method of the LED epitaxial wafer is characterized by comprising the following steps of:
step one, desorbing a substrate in a hydrogen environment;
step two, sequentially epitaxially growing a buffer layer and an n-type semiconductor layer on the substrate;
step three, epitaxially growing an InGaN transition layer;
fourthly, carrying out plasma bombardment treatment on the surface of the InGaN transition layer to enlarge the distance between two adjacent lattices on the surface of the InGaN transition layer, and forming a plurality of pits on the surface of the InGaN transition layer;
step five, at N 2 Adjusting temperature and pressure In the atmosphere, and introducing TMIn to form In nanodots on the pits;
step six, depositing an Al film layer on the pit and InGaN transition layer, and controlling the temperature to gradually decrease in the process of depositing the Al film layer;
step seven, carrying out high-temperature annealing treatment on the Al film layer to enable the Al film to be coagulated into particles or spherical and embedded into the pits;
and step eight, epitaxially growing a multi-quantum well light-emitting layer and a P-type semiconductor layer to form the light-emitting diode with a complete structure.
2. The method for preparing an LED epitaxial wafer according to claim 1, wherein the substrate is sapphire, silicon carbide, gallium nitride, aluminum nitride suitable for epitaxial growth.
3. The method for preparing an LED epitaxial wafer according to claim 1, wherein the buffer layer in the second step is an AlN buffer layer or a GaN buffer layer.
4. The method for preparing an LED epitaxial wafer according to claim 1, wherein the InGaN transition layer in the third step has a thickness of 40-200 nm.
5. The method for manufacturing an LED epitaxial wafer according to claim 1, wherein the pits have a length of 5 to 15nm, a depth of 5 to 15nm, and a distance between two adjacent pits of 5 to 20nm.
6. The method for preparing an LED epitaxial wafer according to claim 1, wherein the adjusting temperature and pressure in the fifth step further comprises:
the pressure is controlled to be 100-220 Torr, and the temperature is controlled to be 700-900 ℃.
7. The method for preparing an LED epitaxial wafer according to claim 1, wherein the specific process of depositing the Al film layer in the step six is:
gradually reducing the temperature from 1100 ℃ to 800 ℃, controlling the pressure to be 100-200 Torr, and introducing TMAL and N 2 And depositing an Al film layer with the thickness of 2-7 nm.
8. The method for preparing an LED epitaxial wafer according to claim 1, wherein the temperature of the high-temperature annealing treatment in the seventh step is 700 to 800 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202311591938.0A CN117558841A (en) | 2023-11-27 | 2023-11-27 | LED epitaxial wafer preparation method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311591938.0A CN117558841A (en) | 2023-11-27 | 2023-11-27 | LED epitaxial wafer preparation method |
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| CN117558841A true CN117558841A (en) | 2024-02-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118039760A (en) * | 2024-04-09 | 2024-05-14 | 江西兆驰半导体有限公司 | Deep ultraviolet LED epitaxial wafer, preparation method thereof and LED chip |
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2023
- 2023-11-27 CN CN202311591938.0A patent/CN117558841A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118039760A (en) * | 2024-04-09 | 2024-05-14 | 江西兆驰半导体有限公司 | Deep ultraviolet LED epitaxial wafer, preparation method thereof and LED chip |
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