CN117558515A - High-heat-conductivity resistance structure and processing method thereof - Google Patents

High-heat-conductivity resistance structure and processing method thereof Download PDF

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Publication number
CN117558515A
CN117558515A CN202311416089.5A CN202311416089A CN117558515A CN 117558515 A CN117558515 A CN 117558515A CN 202311416089 A CN202311416089 A CN 202311416089A CN 117558515 A CN117558515 A CN 117558515A
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China
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pin
layer
area
resistive
lead
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骆达文
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Junwei Electronic Technology Co ltd
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Junwei Electronic Technology Co ltd
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Priority to CN202311416089.5A priority Critical patent/CN117558515A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/08—Cooling, heating or ventilating arrangements
    • H01C1/084—Cooling, heating or ventilating arrangements using self-cooling, e.g. fins, heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Details Of Resistors (AREA)

Abstract

The invention discloses a high heat conduction resistance structure and a processing method thereof, wherein the high heat conduction resistance structure comprises a resistance layer assembly and a pin assembly, the pin assembly comprises a first pin, a second pin and a third pin, and the first pin, the second pin and the third pin are all connected with the surface of a first side of the resistance layer assembly; the first pin, the second pin and the third pin are provided with intervals; the first pin, the second pin and the third pin are used for being connected with different circuit boards; the resistor layer assembly, the second pin and the third pin form a first path, the resistor layer assembly, the first pin and the third pin form a second path, and the resistor layer assembly, the first pin and the second pin form a third path. According to the technical scheme, the resistor layer assembly is connected with the pin assembly to form a plurality of power-on or heat-conducting paths, and heat generated when any path is powered on can be directly conducted to circuit boards corresponding to different pins through other two non-power-on paths, so that the purpose of rapid heat dissipation is achieved.

Description

High-heat-conductivity resistance structure and processing method thereof
Technical Field
The invention relates to the field of electronic products, in particular to a high-heat-conduction resistance structure and a processing method thereof.
Background
With the development of technology, the charging efficiency of the battery is gradually improved, for example, the battery is developed towards the direction of rapid charging, and the rapid charging power is higher, so that when the battery is applied to an electronic product, the heat generation amount of the electronic product is easily improved; at present, in order to improve the heat dissipation effect, a heat dissipation fin is generally added on a product, heat generated by the product is conducted to the heat dissipation fin, the heat dissipation fin is in contact with air for heat dissipation, the heat dissipation mode needs to rely on natural convection of air to take away the heat on the heat dissipation fin, and the heat dissipation effect is poor.
Disclosure of Invention
The invention mainly aims to provide a high-heat-conductivity resistance structure, and aims to solve the problem that the existing resistance element has poor heat dissipation effect.
In order to achieve the above object, the present invention provides a high thermal conductivity resistance structure, comprising:
a resistive layer assembly;
the pin assembly comprises a first pin, a second pin and a third pin, and the first pin, the second pin and the third pin are all connected with the first side surface of the resistor layer assembly; the first pins, the second pins and the third pins are provided with intervals; the first pin, the second pin and the third pin are used for being connected with a circuit board; the first pin, the second pin and the third pin are used for being connected with different circuit boards; the first path is formed by the resistance layer component, the second pin and the third pin, the second path is formed by the resistance layer component, the first pin and the third pin, and the third path is formed by the resistance layer component, the first pin and the second pin.
Optionally, the resistive layer assembly includes a first resistive layer, a second resistive layer, and a first adhesive layer, where the first pin is connected to a first side surface of the first resistive layer, and the first pin is located at one end of the first resistive layer; two sides of the first adhesive layer are respectively adhered to the second resistance layer and the first resistance layer, and the second resistance layer is connected with the second pin and the third pin; one end of the first resistor layer is electrically connected with one end of the second resistor layer.
Optionally, the resistive layer assembly includes a first resistive layer, a second resistive layer, and a first adhesive layer, wherein a first side surface of the first adhesive layer is adhered to the second pin, the third pin, and the second resistive layer, and the first pin and the second pin are located between the second resistive layer; the second side surface of the first adhesive layer is adhered to the first resistor layer; one end of the first resistor layer is electrically connected with one end of the second resistor layer.
Optionally, the high thermal conductivity resistance structure further includes a second adhesive layer and a first heat sink, wherein two sides of the second adhesive layer are respectively adhered to a second side surface of the resistance layer assembly of the heat sink.
Optionally, the both ends of resistance layer subassembly respectively with first pin with the second pin is connected, the top of resistance layer subassembly is equipped with the third and pastes the layer, high heat conduction resistance structure still includes the second fin, the second fin with the third is pasted the layer and is kept away from one side of resistance layer subassembly is connected, the tip of second fin with the third pin is connected.
The invention also provides a processing method of the high heat conduction resistance structure, which comprises the following steps:
forming a first pin area, a second pin area and a third pin area on the first side surface of the resistor layer assembly, wherein a space is arranged among the first pin area, the second pin area and the third pin area;
and forming the first pin in the first pin area, forming the second pin in the second pin area, and forming the third pin in the third pin area.
Optionally, the step of forming the first pin on the first side surface of the resistive layer assembly, forming the second pin on the second pin area, and forming the third pin on the third pin area includes the steps of:
forming a plating resist material layer on a first side surface of the resistive layer assembly except the first pin area, the second pin area and the third pin area;
and forming a first pin in the first pin area through electroplating, forming a second pin in the second pin area through electroplating, and forming a third pin in the third pin area through electroplating.
Optionally, forming a first lead area, a second lead area and a third lead area on a first side surface of the resistive layer assembly, and providing a three-lead area, wherein a space is provided among the first lead area, the second lead area and the third lead area, and the method comprises the following steps:
bonding the first resistor layer and the second resistor layer by using the first bonding layer to form a resistor layer assembly;
removing the end part of the second resistance layer and the end part of the first adhesion layer so as to form the first pin area on the first resistance layer;
forming the second pin area and the third pin area on the first side surface of the second resistor layer; or forming the second pin area and the third pin area on the first side surface of the first adhesive layer, wherein the second pin area and the third pin area are positioned on two sides of the second resistor layer.
Optionally, the step of forming a plating resist material layer on the first side of the resistive layer assembly except the first lead area, the second lead area and the third lead area includes the steps of:
a plating resist material layer is formed on a first side surface of the first resistive layer except the first lead region and on a first side surface of the second resistive layer except the second lead region and the third lead region.
Optionally, forming a first pin area, a second pin area and a third pin area on the first side surface of the resistive layer assembly, wherein a space is arranged among the first pin area, the second pin area and the third pin area; forming the first pin in the first pin area, forming the second pin in the second pin area, and forming the third pin in the third pin area, comprising the steps of:
forming a first pin area on the first side surface of the first resistor layer, and welding the first pin with the first pin area;
forming a second pin area and a third pin area at two ends of a second layer of resistance layer, welding the second pin with the second pin area, and welding the third pin with the third pin area;
the first resistive layer and the second resistive layer are bonded with a first bonding layer to form the resistive layer assembly.
The technical scheme of the invention is that a plurality of electrifying or heat conducting paths are formed by adopting the connection of a resistor layer assembly and a pin assembly, wherein the pin assembly comprises a first pin, a second pin and a third pin, the first pin, the second pin and the third pin are all connected with the first side surface of the resistor layer assembly, the first pin, the second pin and the third pin are all provided with intervals, and the first pin, the second pin and the third pin are used for being connected with different circuit boards; the resistor layer component, the second pin and the third pin form a first path, the resistor layer component, the first pin and the third pin form a second path, the resistor layer component, the first pin and the second pin form a third path, each path can be switched to different paths according to requirements through different current flows, and the purpose of current sensing is realized; the heat generated when any path is electrified, and the other two non-electrified paths can be directly conducted to the circuit boards corresponding to different pins, so that the aim of rapid heat dissipation is fulfilled, and the heat dissipation efficiency is improved; meanwhile, the high heat conduction resistance structure has the functions of the three existing resistance elements, and has the advantage of saving space.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an embodiment of a high thermal conductivity resistor structure according to the present invention.
FIG. 2 is a schematic diagram illustrating a path of an embodiment of a high thermal conductivity resistor structure according to the present invention.
Fig. 3 is a schematic diagram illustrating a processing step of an embodiment of a processing method of a high thermal conductivity resistance structure according to the present invention.
Fig. 4 is a schematic structural diagram of another embodiment of the high thermal conductivity resistance structure of the present invention.
Fig. 5 is a schematic path diagram of another embodiment of the high thermal conductivity resistance structure of the present invention.
Fig. 6 is a schematic structural diagram of a high thermal conductivity resistance structure according to another embodiment of the present invention.
Fig. 7 is a schematic diagram illustrating a processing step of a processing method of a high thermal conductivity resistance structure according to another embodiment of the present invention.
Fig. 8 is a schematic structural diagram of a high thermal conductivity resistance structure according to another embodiment of the present invention.
Fig. 9 is a schematic diagram illustrating a processing step of a processing method of a high thermal conductivity resistance structure according to another embodiment of the present invention.
Reference numerals illustrate:
reference numerals Name of the name Reference numerals Name of the name
1 Resistor layer assembly 11 First resistor layer
12 Second resistance layer 13 First adhesive layer
14 Second adhesive layer 15 First radiating fin
16 Third adhesive layer 17 Second radiating fin
2 Pin assembly 21 First pin
22 Second pin 23 Third pin
3 First path 4 Second path
5 Third path 7 Circuit board
8 Plating-preventing material layer
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, if a directional indication (such as up, down, left, right, front, and rear … …) is involved in the embodiment of the present invention, the directional indication is merely used to explain the relative positional relationship, movement condition, etc. between the components in a specific posture, and if the specific posture is changed, the directional indication is correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, if "and/or" and/or "are used throughout, the meaning includes three parallel schemes, for example," a and/or B "including a scheme, or B scheme, or a scheme where a and B are satisfied simultaneously. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
The invention provides a high heat conduction resistance structure.
Example 1
Referring to fig. 1 to 3, in an embodiment of the present invention, the high thermal conductivity resistive structure includes a resistive layer assembly 1 and a pin assembly 2; the pin assembly 2 comprises a first pin 21, a second pin 22 and a third pin 23, wherein the first pin 21, the second pin 22 and the third pin 23 are connected with the first side surface of the resistor layer assembly 1; the first pins 21, the second pins 22 and the third pins 23 are provided with intervals; the first pin 21, the second pin 22 and the third pin 23 are used for being connected with the circuit board 7; the first pin 21, the second pin 22 and the third pin 23 are used for connecting with different circuit boards 7; the first path 3 is formed by the resistor layer assembly 1, the second pin 22 and the third pin 23, the second path 4 is formed by the resistor layer assembly 1, the first pin 21 and the third pin 23, and the third path 5 is formed by the resistor layer assembly 1, the first pin 21 and the second pin 22.
Forming a plurality of energizing or heat conducting paths by adopting the connection of the resistive layer assembly 1 and the pin assembly 2, wherein the pin assembly 2 comprises a first pin 21, a second pin 22 and a third pin 23, the first pin 21, the second pin 22 and the third pin 23 are all connected with the first side surface of the resistive layer assembly 1, spaces are arranged among the first pin 21, the second pin 22 and the third pin 23, and the first pin 21, the second pin 22 and the third pin 23 are used for being connected with different circuit boards 7; the first path 3 is formed by the resistor layer assembly 1, the second pin 22 and the third pin 23, the second path 4 is formed by the resistor layer assembly 1, the first pin 21 and the third pin 23, the third path 5 is formed by the resistor layer assembly 1, the first pin 21 and the second pin 22, and each path can be switched to different paths according to the requirements through different current flows, so that the purpose of current sensing is realized; the heat generated when any path is electrified, and the other two non-electrified paths can be directly conducted to the circuit board 7 corresponding to different pins, so that the purpose of rapid heat dissipation is realized, and the heat dissipation efficiency is improved; meanwhile, the high heat conduction resistance structure has the functions of the three existing resistance elements, and has the advantage of saving space.
The first pin 21, the second pin 22, and the third pin 23 serve as electrodes of the resistive layer assembly 1.
The invention also provides a processing method of the high heat conduction resistance structure, which comprises the following steps:
forming a first pin 21 area, a second pin 22 area and a third pin 23 area on the first side surface of the resistor layer assembly 1, wherein a space is arranged among the first pin 21 area, the second pin 22 area and the third pin 23 area;
the first lead 21 is formed in the first lead 21 region, the second lead 22 is formed in the second lead 22 region, and the third lead 23 is formed in the third lead 23 region.
The first, second and third leads 21, 22 and 23 are connected to the resistive layer assembly 1 by soldering, or the first, second and third leads 21, 22 and 23 may be formed by electroplating, specifically by forming the plating resist layer 8 on the first side surface of the first resistive layer 11 except for the first lead 21 region and on the surface of the second resistive layer 12 except for the second and third lead 22 and 23 regions, followed by forming the first, second and third leads 21, 22 and 23 by electroplating in the first, second and third lead 21, 22 and 23 regions.
Example two
The difference between this embodiment and the first embodiment is that, referring to fig. 4 to 7, the resistive layer assembly 1 includes a first resistive layer 11, a second resistive layer 12, and a first adhesive layer 13; the first pin 21 is connected with the first side surface of the first resistor layer 11; the first pin 21 is located at one end of the first resistor layer 11; two sides of the first adhesive layer 13 are respectively adhered to the second resistor layer 12 and the first resistor layer 11; the second resistor layer 12 is connected to the second pin 22 and the third pin 23; one end of the first resistor layer 11 is electrically connected to one end of the second resistor layer 12.
By adding the first resistive layer 11 and the second resistive layer 12, different electrically and thermally conductive paths can be formed; for example, the first resistive layer 11, the second resistive layer 12, the second pin 22, and the third pin 23 form a first path 3, the first resistive layer 11, the second resistive layer 12, the first pin 21, and the third pin 23 form a second path 4, and the first pin 21, the second resistive layer 12, and the second pin 22 form a third path 5; when the first path 3 is electrified, the first pin 21 is used as a heat dissipation path; when the second path 4 is energized, the second pin 22 and the second resistor layer 12 serve as heat dissipation paths, and when the third path 5 is energized, the first pin 21 and the first resistor layer 11 serve as heat dissipation paths. The first adhesive layer 13 includes an insulating adhesive layer, and the insulating adhesive layer is made of a colloid material with high heat conductivity, and heat conduction can be performed between the first resistor layer 11 and the second resistor layer 12 through the first adhesive layer, so that heat dissipation performance is further improved. By communicating the second end of the first resistive layer 11 with the second end of the second resistive layer 12, when the current path includes the first resistive layer 11, current can flow through the complete first resistive layer 11 and then be led into the third pin 23 or the second resistive layer 12, thereby improving the utilization rate of the first resistive layer 11.
Optionally, the high heat conduction resistance structure further comprises a second adhesive layer 14 and a first heat sink 15, wherein two sides of the second adhesive layer 14 are respectively adhered to the second side surface of the resistance layer assembly 1 of the first heat sink 15. The second adhesive layer 14 and the first radiating fin 15 are utilized to increase the radiating path of the high heat conduction resistance structure, so that the overall radiating efficiency of the heat conduction resistance structure can be further improved.
The invention also provides a processing method of the high heat conduction resistance structure, which comprises the following steps:
forming a first pin 21 area, a second pin 22 area and a third pin 23 area on the first side surface of the resistor layer assembly 1, wherein a space is arranged among the first pin 21 area, the second pin 22 area and the third pin 23 area;
the first lead 21 is formed in the first lead 21 region, the second lead 22 is formed in the second lead 22 region, and the third lead 23 is formed in the third lead 23 region.
Specifically, the plating resist material layer 8 is formed on the first side surface of the first resistive layer 11 except the first lead 21 region and on the surface of the second resistive layer 12 except the second lead 22 region and the third lead 23 region, and then the first lead 21, the second lead 22 and the third lead 23 are formed by electroplating in the first lead 21 region, the second lead 22 region and the third lead 23 region.
By forming the pin assembly 2 on one side surface of the resistor layer assembly 1, a plurality of energizing paths are formed between the resistor layer assembly 1 and the pin assembly 2, each energizing path can pass through different current flow directions, and different paths can be switched according to requirements, so that the purpose of current sensing is realized; the heat generated when any path is electrified, the other two non-electrified paths are heat conduction paths, the heat generated by the resistor layer assembly 1 is directly conducted to different pins by utilizing the heat conduction paths, and then is conducted to the corresponding circuit board 7 from the pins, so that the purpose of rapid heat dissipation is realized.
Optionally, the step of forming the first pin 21 on the first side surface of the resistive layer assembly 1, forming the second pin 22 in the second pin 22 area, and forming the third pin 23 in the third pin 23 area includes the following steps:
forming a plating resist material layer 8 on a first side surface of the resistive layer assembly 1 except for the first lead 21 region, the second lead 22 region and the third lead 23 region;
the first leads 21 are formed by electroplating in the first lead 21 region, the second leads 22 are formed by electroplating in the second lead 22 region, and the third leads 23 are formed by electroplating in the third lead 23 region.
The first pin 21 area, the second pin 22 area and the third pin 23 area are formed on the resistor layer assembly 1 by forming the plating-preventing material layer 8, so that the subsequent formation of the first pin 21, the second pin 22 and the third pin 23 by electroplating is facilitated in the first pin 21 area, the second pin 22 area and the third pin 23 area, and the plating-preventing material layer 8 is used for avoiding electroplating on other surfaces of the resistor layer assembly 1.
In another processing method, the second pin 22 area and the third pin 23 area are located at two sides of the second resistor layer 12, and according to the position setting of the second pin 22 area and the third pin 23 area, the length of the second resistor layer 12 is controlled, and the second pin 22 and the third pin 23 are electrically connected with the second resistor layer 12 all the time.
Optionally, the step of forming the plating resist material layer 8 on the first side of the resistive layer assembly 1 except the first lead 21 area, the second lead 22 area and the third lead 23 area includes the steps of:
a plating resist material layer 8 is formed on a first side surface of the first resistive layer 11 except for the first lead 21 region, and on a surface of the second resistive layer 12 except for the second lead 22 region and the third lead 23 region.
The plating resist layer 8 is formed by coating a plating resist material on the outer surface of the first resistive layer 11 except the first lead 21 region and on the surface of the second resistive layer 12 except the second lead 22 region and the third lead 23 region, followed by electroplating to form the first lead 21, the second lead 22 and the third lead 23 in the first lead 21 region, the second lead 22 region and the third lead 23 region, respectively.
Firstly, a first adhesive layer 13 is used for firstly adhering a first resistance layer 11 and a second resistance layer 12 together to form a resistance layer assembly 1; removing the end part of the first end of the second resistor layer 12 by etching, cutting or grinding the second resistor layer 12, and simultaneously removing the end part of the first adhesive layer 13 corresponding to the second resistor layer 12, so that one end of the first resistor layer 11 is exposed and has a position for forming a first pin 21 area, thereby facilitating the subsequent formation of the first pin 21 by electroplating; a second pin 22 and a third pin 23 are then formed at both ends of the second resistive layer 12. By controlling the length and width of the second resistive layer 12, different structural requirements of the user are accommodated; by arranging the second pin 22 region and the third pin 23 region at two sides of the second resistor layer 12, the first pin 21 and the second pin 22 are ensured to have a certain length, and the overall rigidity of the first pin 21 and the second pin 22 is improved; when the first adhesive layer 13 is used to adhere the first resistive layer 11 and the second resistive layer 12, the second end of the first resistive layer 11 should have an extension portion, and the extension portion abuts against the second resistive layer 12 to realize electrical connection.
Example III
Compared with the first embodiment, the difference between this embodiment and the first embodiment is that, referring to fig. 8 and fig. 9, two ends of the resistive layer assembly 1 are respectively connected with the first pin 21 and the second pin 22, a third adhesive layer 16 is disposed on the top of the resistive layer assembly 1, the high heat conduction resistive structure further includes a second heat sink 17, the second heat sink 17 is connected with a side of the third adhesive layer 16 away from the resistive layer assembly 1, and an end of the second heat sink 17 is connected with the third pin 23.
The first lead 21, the resistive layer assembly 1 and the second lead 22 form a fourth path on which heat is conducted and dissipated through the third adhesive layer 16 and the second heat dissipation layer.
The invention also provides a processing method of the high heat conduction resistance structure, which comprises the following steps:
forming a first pin 21 area, a second pin 22 area and a third pin 23 area on the first side surface of the resistor layer assembly 1, wherein a space is arranged among the first pin 21 area, the second pin 22 area and the third pin 23 area;
the first lead 21 is formed in the first lead 21 region, the second lead 22 is formed in the second lead 22 region, and the third lead 23 is formed in the third lead 23 region.
Optionally, the step of forming a first lead 21 area, a second lead 22 area, and a third lead 23 area, and a third lead area on the first side surface of the resistive layer assembly 1, where a space is provided among the first lead 21 area, the second lead 22 area, and the third lead 23 area, includes the following steps:
bonding the first resistive layer 11 and the second resistive layer 12 with the first bonding layer 13 to form the resistive layer assembly 1;
removing the end of the second resistive layer 12 and the end of the first adhesive layer 13 to form the first lead 21 region on the first resistive layer 11;
the second lead 22 region and the third lead 23 region are formed on the first side surface of the second resistive layer 12.
Optionally, a first pin 21 area, a second pin 22 area and a third pin 23 area are formed on the first side surface of the resistive layer assembly 1, and a space is arranged among the first pin 21 area, the second pin 22 area and the third pin 23 area; the step of forming the first pin 21 in the first pin 21 region, forming the second pin 22 in the second pin 22 region, and forming the third pin 23 in the third pin 23 region, includes the steps of:
forming a first pin 21 area on the first side surface of the first resistor layer 11, and welding the first pin 21 with the first pin 21 area;
forming a second pin 22 area and a third pin 23 area at two ends of the second layer of resistor layer, welding the second pin 22 with the second pin 22 area, and welding the third pin 23 with the third pin 23 area;
the first resistive layer 11 and the second resistive layer 12 are bonded with a first adhesive layer 13 to form the resistive layer assembly 1.
The processing method mainly realizes the welding of the first resistor layer 11 and the first pin 21 and the welding of the second resistor layer 12 and the second pin 22 and the third pin 23 through a metal welding process, and then bonds the first resistor layer 11 and the second resistor layer 12 by using the second bonding layer 14, so that the processing method has the advantage of simplicity in operation.
The technical scheme of the invention is that a plurality of electrifying or heat conducting paths are formed by adopting the resistor layer assembly 1 to be connected with the pin assembly 2, wherein the pin assembly 2 comprises a first pin 21, a second pin 22 and a third pin 23, the first pin 21, the second pin 22 and the third pin 23 are all connected with the first side surface of the resistor layer assembly 1, spaces are arranged among the first pin 21, the second pin 22 and the third pin 23, and the first pin 21, the second pin 22 and the third pin 23 are used for being connected with different circuit boards 7; the first path 3 is formed by the resistor layer assembly 1, the second pin 22 and the third pin 23, the second path 4 is formed by the resistor layer assembly 1, the first pin 21 and the third pin 23, the third path 5 is formed by the resistor layer assembly 1, the first pin 21 and the second pin 22, and each path can be switched to different paths according to the requirements through different current flows, so that the purpose of current sensing is realized; the heat generated when any path is electrified, and the other two non-electrified paths can be directly conducted to the circuit board 7 corresponding to different pins, so that the purpose of rapid heat dissipation is realized, and the heat dissipation efficiency is improved; meanwhile, the high heat conduction resistance structure has the functions of the three existing resistance elements, and has the advantage of saving space.
The foregoing description is only of the preferred embodiments of the present invention, and is not intended to limit the scope of the invention, but rather, the equivalent structural changes made by the description and drawings of the present invention or the direct/indirect application in other related technical fields are included in the scope of the present invention.

Claims (10)

1. A high thermal conductivity resistive structure comprising:
a resistive layer assembly;
the pin assembly comprises a first pin, a second pin and a third pin, and the first pin, the second pin and the third pin are all connected with the first side surface of the resistor layer assembly; the first pins, the second pins and the third pins are provided with intervals; the first pin, the second pin and the third pin are used for being connected with different circuit boards; the first path is formed by the resistance layer component, the second pin and the third pin, the second path is formed by the resistance layer component, the first pin and the third pin, and the third path is formed by the resistance layer component, the first pin and the second pin.
2. The high thermal conductivity resistive structure according to claim 1, wherein the resistive layer assembly comprises a first resistive layer, a second resistive layer, and a first adhesive layer, the first pin being coupled to a first side surface of the first resistive layer, the first pin being located at one end of the first resistive layer; two sides of the first adhesive layer are respectively adhered to the second resistor layer and the first resistor layer, and the second resistor layer is connected with the second pin and the third pin; one end of the first resistor layer is electrically connected with one end of the second resistor layer.
3. The high thermal conductivity resistive structure according to claim 1, wherein said resistive layer assembly comprises a first resistive layer, a second resistive layer, and a first adhesive layer, a first side surface of said first adhesive layer being bonded to said second pin, said third pin, and said second resistive layer, said first pin and said second pin being positioned between said second resistive layer; the second side surface of the first adhesive layer is adhered to the first resistor layer; one end of the first resistor layer is electrically connected with one end of the second resistor layer.
4. A high thermal conductivity resistive structure according to claim 2 or claim 3, further comprising a second adhesive layer and a first heat sink, both sides of said second adhesive layer being bonded to respective second side surfaces of said resistive layer assembly of heat sinks.
5. The high thermal conductivity resistance structure according to claim 1, wherein two ends of the resistance layer assembly are respectively connected with the first pin and the second pin, a third adhesive layer is arranged on the top of the resistance layer assembly, the high thermal conductivity resistance structure further comprises a second radiating fin, the second radiating fin is connected with one side, far away from the resistance layer assembly, of the third adhesive layer, and the end portion of the second radiating fin is connected with the third pin.
6. The processing method of the high heat conduction resistance structure is characterized by comprising the following steps of:
forming a first pin area, a second pin area and a third pin area on the first side surface of the resistor layer assembly, wherein a space is arranged among the first pin area, the second pin area and the third pin area;
and forming the first pin in the first pin area, forming the second pin in the second pin area, and forming the third pin in the third pin area.
7. The method of processing a high thermal conductivity resistive structure according to claim 6, wherein said first pin is formed on a first side surface of said resistive layer assembly, said second pin is formed on said second pin area, and said third pin is formed on said third pin area, comprising the steps of:
forming a plating resist material layer on a first side surface of the resistive layer assembly except the first, second and third lead areas;
and forming a first pin in the first pin area through electroplating, forming a second pin in the second pin area through electroplating, and forming a third pin in the third pin area through electroplating.
8. The method of fabricating a high thermal conductivity resistive structure according to claim 6, wherein forming a first lead area, a second lead area, and a third lead area on a first side surface of the resistive layer assembly, wherein the first lead area, the second lead area, and the third lead area have a spacing therebetween, comprising the steps of:
bonding the first resistor layer and the second resistor layer by using the first bonding layer to form a resistor layer assembly;
removing the end part of the second resistance layer and the end part of the first adhesion layer so as to form the first pin area on the first resistance layer;
forming the second pin area and the third pin area on the first side surface of the second resistor layer; or forming the second pin area and the third pin area on the first side surface of the first adhesive layer, wherein the second pin area and the third pin area are positioned on two sides of the second resistor layer.
9. The method of processing a high thermal conductivity resistive structure according to claim 8, wherein the step of forming a plating resist layer on a first side of said resistive layer assembly other than the first lead region, the second lead region, and the third lead region comprises the steps of:
a plating resist material layer is formed on a first side surface of the first resistive layer except the first lead region and on a first side surface of the second resistive layer except the second lead region and the third lead region.
10. The method of manufacturing a high thermal conductivity resistive structure according to claim 6, wherein a first lead area, a second lead area, and a third lead area are formed on a first side surface of the resistive layer assembly, and wherein a three-lead area is provided with a space therebetween; forming the first pin in the first pin area, forming the second pin in the second pin area, and forming the third pin in the third pin area, comprising the steps of:
forming a first pin area on the first side surface of the first resistor layer, and welding the first pin with the first pin area;
forming a second pin area and a third pin area at two ends of a second layer of resistance layer, welding the second pin with the second pin area, and welding the third pin with the third pin area;
the first resistive layer and the second resistive layer are bonded with a first bonding layer to form the resistive layer assembly.
CN202311416089.5A 2023-10-27 2023-10-27 High-heat-conductivity resistance structure and processing method thereof Pending CN117558515A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311416089.5A CN117558515A (en) 2023-10-27 2023-10-27 High-heat-conductivity resistance structure and processing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311416089.5A CN117558515A (en) 2023-10-27 2023-10-27 High-heat-conductivity resistance structure and processing method thereof

Publications (1)

Publication Number Publication Date
CN117558515A true CN117558515A (en) 2024-02-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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