CN117552107A - Control method for silicon carbide growth process, silicon carbide and device - Google Patents
Control method for silicon carbide growth process, silicon carbide and device Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 192
- 230000008569 process Effects 0.000 title claims abstract description 142
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 132
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 132
- 239000013078 crystal Substances 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 43
- 230000004044 response Effects 0.000 claims description 22
- 238000009529 body temperature measurement Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 7
- 238000001931 thermography Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 26
- 230000001276 controlling effect Effects 0.000 description 26
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- 230000009286 beneficial effect Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 230000011218 segmentation Effects 0.000 description 5
- 230000005856 abnormality Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000011328 necessary treatment Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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Abstract
The invention provides a control method of a silicon carbide growth process, silicon carbide and a device, wherein the control method comprises the following steps: a unified growth formula is adopted to control the growth process of the silicon carbide; the growth recipe includes all control steps in the growth process of silicon carbide and all control parameters in the control steps. According to the control method provided by the invention, all control steps in the silicon carbide growth process and all control parameters in the control steps are converted into a growth formula control mode, so that the intelligent control of the whole process of the silicon carbide growth is realized, the uncontrollable risk in the silicon carbide growth process is reduced, the yield is improved, the labor cost is reduced, and the production efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of silicon carbide, relates to a control method of a silicon carbide growth process, and particularly relates to a control method of a silicon carbide growth process, silicon carbide and a device.
Background
The third generation of semiconductor material, silicon carbide, is in the period of rapid development and expansion, and in the process of industrialization, the growth of silicon carbide crystals by using a PVT method is the mainstream process. After the growth of each furnace of crystal is finished, manual operation is needed in the growth process. This approach is very demanding on the manual work and is also very lazy to the operator. Moreover, in the first aspect, the current production operation mode of silicon carbide growth increases the uncontrollable risk of the silicon carbide crystal production process due to the incorporation of more human subjective factors; on the other hand, this mode may lead to not only high labor costs but also a decrease in production efficiency.
CN116227896a discloses a method and a system for managing silicon carbide production worksheets, which relate to the technical field of intelligent management, and are used for loading new silicon carbide added worksheets and basic information of silicon carbide production workshops and determining equipment productivity information; acquiring the pre-storage quantity of the silicon carbide raw material, and optimizing the work order production sequence when the equipment capacity information does not meet the work order standard information; and when the pre-storage quantity of the silicon carbide raw material does not meet the standard template information of the work order, raw material purchase optimization is carried out, and the work order management of the silicon carbide production is completed.
CN115993807a discloses a production monitoring optimizing control method and system of silicon carbide, which relates to the technical field of silicon carbide, and the method comprises the following steps: reading a production control process of silicon carbide, and carrying out initial control node layout; acquiring historical processing production information, extracting production influence characteristics, and executing characteristic compensation on the extraction result of the production influence characteristics; determining key nodes; obtaining real-time production data of key nodes; outputting an abnormality detection result; performing inter-process association evaluation based on the production control process to obtain an association evaluation result; and repositioning the key nodes, and generating optimized compensation parameters based on the abnormal detection results and the monitoring results of the repositioning key nodes.
The prior art disclosed at present has certain defects, and has the problems that the controllability of the silicon carbide growth process is difficult to realize, more artificial subjective factors can be doped, so that the uncontrollable risk of the silicon carbide crystal production process is increased, and the labor cost is high and the production efficiency is low. Therefore, it is important to develop and design a novel control method for the silicon carbide growth process.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a control method, silicon carbide and a device for the silicon carbide growth process.
To achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for controlling a silicon carbide growth process, the method comprising: a unified growth formula is adopted to control the growth process of the silicon carbide;
the growth recipe includes all control steps in the growth process of silicon carbide and all control parameters in the control steps.
According to the control method provided by the invention, all control steps in the silicon carbide growth process and all control parameters in the control steps are converted into a growth formula control mode, so that the intelligent control of the whole process of the silicon carbide growth is realized, the uncontrollable risk in the silicon carbide growth process is reduced, the yield is improved, the labor cost is reduced, and the production efficiency is improved.
Preferably, the controlling step includes automatic resetting of the heating coil.
In the silicon carbide growing process, a heating coil is generally used for providing proper temperature conditions, and if the heating coil has a problem or needs to be maintained, the heating coil is automatically reset; the automatic resetting of the heating coil means that after a fault or abnormal condition is detected, the system automatically resets or restarts the heating coil, so that the growth process of the silicon carbide is ensured to be suspended before the normal operation is restored, and the generation of a bad or unexpected result is prevented.
Preferably, the automatic resetting of the heating coil includes: the heating coil is controlled to be automatically reset to the same position of the equipment in a unified way.
Preferably, the controlling step comprises an automatic determination of growth chamber tightness.
In the silicon carbide growth process, the tightness of the growth cavity plays a vital role, the quality and the growth efficiency of crystals can be influenced, and an automatic judging method is adopted to ensure the tightness of the growth cavity; according to the invention, the leakage problem in the growth process can be monitored in real time by automatically judging the tightness of the growth cavity, and measures are taken in time to repair, so that the stability and quality of the silicon carbide growth process are ensured, and the growth efficiency and yield of the silicon carbide single crystal are improved.
Preferably, the automatic determination of growth chamber tightness includes: and automatically judging whether the tightness of the ingot growth chamber meets the standard by adopting a pressure rise rate fixing algorithm.
Preferably, the controlling step includes automatically performing temperature bore alignment.
In the silicon carbide growth process, the dependence of manual operation can be reduced and the accuracy and consistency of alignment can be improved by automatically aligning the temperature measuring holes, so that the accuracy of temperature measurement in the growth process can be ensured, and the quality and repeatability of the silicon carbide growth can be improved.
Preferably, the automatic temperature measurement hole alignment includes: the growth formula adopts a thermal imaging identification mode to realize automatic alignment of the temperature measuring holes.
Preferably, the automatic temperature measurement hole alignment further comprises: when the temperature measuring hole is shifted in the growth process, the temperature measuring cursor is automatically adjusted according to the shift position of the temperature measuring hole, so that the temperature measuring accuracy is ensured.
Preferably, the controlling step includes a fully automatic temperature control mode.
In the silicon carbide growth process, accurate and stable temperature control is realized through a full-automatic temperature control mode, so that the quality and consistency of the growth of silicon carbide crystals are ensured.
Preferably, the fully automatic temperature control mode includes: the same temperature target and control time are set, and the automatic growth formula control equipment reaches the same temperature in the same time.
Preferably, the controlling step includes automatically switching the control mode.
In the silicon carbide growth process, the control mode is automatically switched, so that the automatic adaptation to different requirements and conditions in the silicon carbide growth process is realized, the growth process of the silicon carbide is optimized, and the crystal quality, the growth rate and the repeatability are improved; meanwhile, the automatic control mode switching can also improve the production efficiency and reduce the intervention of operators.
Preferably, the automatic switching control mode includes: the growth formula adopts a fixed average algorithm, and the control of the growth process automatically completes the mutual switching among power, temperature and current.
Preferably, the controlling step includes automatic parameter updating.
In the silicon carbide growth process, the dynamic adjustment of the growth condition is realized by the automatic parameter updating mode, and the control parameters can be automatically adjusted according to real-time measurement data and system requirements in the silicon carbide growth process, so that better growth effect and control performance are achieved, the stability, consistency and production efficiency of the silicon carbide growth are improved, and manual operation is reduced.
Preferably, the automatic parameter updating includes: after the temperature control mode is switched, new growth technological parameters matched with the equipment are automatically generated according to an algorithm of the average power and the built-in compensation power of the equipment so as to control the crystal growth process to be continuously carried out.
Preferably, the controlling step includes the heating coil being automatically controlled using a segment speed.
In the silicon carbide growth process, the growth speed is automatically regulated according to different stages and real-time data in the silicon carbide growth process by automatic control of the sectional speed so as to meet specific requirements, thereby being beneficial to improving the crystal quality and increasing the growth speed and realizing a more reliable and efficient growth process; meanwhile, the automatic control of the segmentation speed can also reduce the intervention and errors of operators, and improve the production consistency and repeatability.
Preferably, the automatic control of the segment speed includes: the heating coil is automatically controlled by using the same formula to realize that different growth stages correspond to different moving speeds.
Preferably, the controlling step comprises an automatic emergency response.
In the growth process of the silicon carbide, the implementation of automatic emergency response is a key for ensuring the safety and stability of the growth process; the automatic emergency response includes the following: first, the temperature anomaly response, through the temperature sensor monitoring the system temperature, if the temperature is beyond the set range, the system can automatically trigger emergency response, for example, reduce the heating power, increase the cooling flow or stop the growth process to prevent the crystal quality from being reduced or the equipment from being damaged due to the overhigh temperature; second, the abnormal response of the gas flow, monitoring the gas supply flow through a gas flow sensor, if abnormal conditions are detected, automatically taking measures, such as closing or adjusting the supply of the corresponding gas to keep the gas flow within a safe range, and avoiding the problem of crystal growth or equipment failure caused by excessive gas supply or insufficient gas supply; thirdly, the pressure abnormality response is carried out, the pressure difference between the inside and the outside of the growth chamber is monitored through the pressure sensor, if abnormal change is found, the reaction can be automatically carried out, for example, the gas supply or the vacuumizing speed is adjusted according to the pressure change, so that the pressure stability is kept, and the adverse effect of the excessive high or the excessive low pressure on the growth process is avoided; fourthly, the crystal surface defect response is carried out, the condition of the crystal surface defect is monitored in real time through an image recognition technology or crystal quality detection device, if the defect which is abnormal or exceeds a set standard is detected, the growth process can be automatically stopped, and operators are informed to carry out necessary treatment and adjustment; fifthly, data recording and alarming, wherein in the growth process, the change and trend of key parameters can be automatically recorded, an alarming mechanism is set, when the parameters exceed a set threshold or abnormal change, an alarm can be automatically triggered, and related data are recorded for subsequent analysis and fault investigation.
The automatic emergency response in the invention can timely and accurately respond to abnormal conditions in the silicon carbide growth process, and necessary measures are taken to ensure the stability, safety and reliability of the silicon carbide growth process, thereby being beneficial to reducing potential risks, improving the growth quality and reducing the burden and errors of operators. At the same time, data may also be recorded and analyzed to further optimize the growth process and improve device performance.
Preferably, the automatic emergency response includes: in the crystal growth process, when the factory conditions exceed the specified range, emergency operation matched with the factory conditions is automatically started according to the changed factory conditions.
Preferably, the controlling step includes automatic furnace opening.
In the silicon carbide growth process, in the automatic furnace opening process, integrity check is automatically carried out, including detection of whether abnormal conditions exist, such as temperature deviation, pressure abnormality or combustion problems, if abnormal conditions are found, the system can trigger an alarm, automatically stop the furnace opening process, and simultaneously inform operators of carrying out necessary treatment and maintenance.
Preferably, the automatic furnace opening comprises: and in the final stage of the silicon carbide single crystal growth program, automatically controlling the single crystal furnace to open a furnace cover to perform thermal field natural cooling.
In a second aspect, the present invention provides a silicon carbide produced by the control method of the first aspect.
In a third aspect, the present invention provides an apparatus for use in a silicon carbide growth process, the apparatus comprising a growth recipe control system for controlling the growth process of silicon carbide using a uniform growth recipe.
Preferably, the device comprises:
the heating coil automatic resetting module is used for uniformly controlling the heating coil to be automatically reset to the same position of the equipment;
the automatic judging module for the tightness of the growth cavity is used for automatically judging whether the tightness of the growth cavity of the ingot reaches the standard or not by adopting a pressure rise rate fixing algorithm;
the automatic temperature measuring hole alignment module is used for realizing automatic alignment of the temperature measuring holes by adopting a thermal imaging identification mode for the growth formula, and automatically adjusting a temperature measuring cursor according to the offset position of the temperature measuring holes when the temperature measuring holes are offset in the growth process, so that the temperature measuring accuracy is ensured;
the full-automatic temperature control module is used for setting the same temperature target and control time, and the automatic growth formula control equipment reaches the same temperature in the same time;
the automatic switching control module is used for controlling the growth formula to adopt a fixed average algorithm to automatically finish the mutual switching among power, temperature and current in the growth process;
the parameter automatic updating module is used for automatically generating new growth process parameters matched with the equipment according to an algorithm of the average power and the built-in compensation power of the equipment after the temperature control mode is switched so as to control the crystal growth process to be continuously carried out;
the automatic control module of the sectional speed is used for using the same formula to automatically control the heating coil to realize that different growth stages correspond to different moving speeds;
the automatic emergency response module is used for automatically starting emergency operation matched with the factory conditions according to the changed factory conditions when the factory conditions exceed the specified range in the crystal growth process;
and the automatic furnace opening module is used for automatically controlling the single crystal furnace to open a furnace cover to perform thermal field natural cooling in the final stage of the silicon carbide single crystal growth program.
Compared with the prior art, the invention has the following beneficial effects:
according to the control method provided by the invention, all control steps in the silicon carbide growth process and all control parameters in the control steps are converted into a growth formula control mode, so that the intelligent control of the whole process of the silicon carbide growth is realized, the uncontrollable risk in the silicon carbide growth process is reduced, the yield is improved, the labor cost is reduced, and the production efficiency is improved.
Detailed Description
The technical scheme of the invention is further described by the following specific embodiments. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the invention and are not to be construed as a specific limitation thereof.
In one embodiment, the invention provides an apparatus for use in a silicon carbide growth process, the apparatus comprising a growth recipe control system for controlling the growth process of silicon carbide using a uniform growth recipe.
Further, the apparatus comprises:
the heating coil automatic resetting module is used for uniformly controlling the heating coil to be automatically reset to the same position of the equipment;
the automatic judging module for the tightness of the growth cavity is used for automatically judging whether the tightness of the growth cavity of the ingot reaches the standard or not by adopting a pressure rise rate fixing algorithm;
the automatic temperature measuring hole alignment module is used for realizing automatic alignment of the temperature measuring holes by adopting a thermal imaging identification mode for the growth formula, and automatically adjusting a temperature measuring cursor according to the offset position of the temperature measuring holes when the temperature measuring holes are offset in the growth process, so that the temperature measuring accuracy is ensured;
the full-automatic temperature control module is used for setting the same temperature target and control time, and the automatic growth formula control equipment reaches the same temperature in the same time;
the automatic switching control module is used for controlling the growth formula to adopt a fixed average algorithm to automatically finish the mutual switching among power, temperature and current in the growth process;
the parameter automatic updating module is used for automatically generating new growth process parameters matched with the equipment according to an algorithm of the average power and the built-in compensation power of the equipment after the temperature control mode is switched so as to control the crystal growth process to be continuously carried out;
the automatic control module of the sectional speed is used for using the same formula to automatically control the heating coil to realize that different growth stages correspond to different moving speeds;
the automatic emergency response module is used for automatically starting emergency operation matched with the factory conditions according to the changed factory conditions when the factory conditions exceed the specified range in the crystal growth process;
and the automatic furnace opening module is used for automatically controlling the single crystal furnace to open a furnace cover to perform thermal field natural cooling in the final stage of the silicon carbide single crystal growth program.
Example 1
The embodiment provides a control method of a silicon carbide growth process, which comprises the following steps: a unified growth formula is adopted to control the growth process of the silicon carbide;
the growth formula comprises all control steps in the growth process of silicon carbide and all control parameters in the control steps;
the control step includes automatic resetting of the heating coil, the automatic resetting of the heating coil includes: uniformly controlling the heating coil to automatically reset to the same position of the equipment;
the control step comprises automatic judging of the growth cavity tightness, and the automatic judging of the growth cavity tightness comprises the following steps: adopting a pressure rise rate fixing algorithm to automatically judge whether the tightness of the ingot growth chamber meets the standard;
the controlling step includes automatically performing temperature bore alignment, the automatically performing temperature bore alignment including: the growth formula adopts a thermal imaging identification mode to realize automatic alignment of the temperature measuring holes; when the temperature measuring hole is shifted in the growth process, the temperature measuring cursor is automatically adjusted according to the shift position of the temperature measuring hole, so that the temperature measuring accuracy is ensured.
The controlling step includes a full-automatic temperature control mode including: setting the same temperature target and control time, and enabling the automatic growth formula control equipment to reach the same temperature in the same time;
the controlling step includes automatically switching control modes including: the growth formula adopts a fixed average algorithm, and the control of the growth process automatically completes the mutual switching among power, temperature and current.
The controlling step includes an automatic parameter update, the automatic parameter update including: after the temperature control mode is switched, according to an algorithm of the average power and the built-in compensation power of the equipment, new growth process parameters matched with the equipment are automatically generated so as to control the crystal growth process to be continuously carried out;
the control step comprises that the heating coil adopts automatic control of the sectional speed, and the automatic control of the sectional speed comprises the following steps: the heating coil is automatically controlled by using the same formula to realize that different growth stages correspond to different moving speeds.
The controlling step includes an automatic emergency response, the automatic emergency response including: in the crystal growth process, when the factory conditions exceed the specified range, automatically starting emergency operation matched with the factory conditions according to the changed factory conditions;
the control step comprises automatic furnace opening, and the automatic furnace opening comprises the following steps: and in the final stage of the silicon carbide single crystal growth program, automatically controlling the single crystal furnace to open a furnace cover to perform thermal field natural cooling.
Example 2
The present embodiment provides a control method of a silicon carbide growth process, which is the same as that of embodiment 1 except that the automatic resetting of the heating coil is replaced by resetting the heating coil by any operation.
Example 3
The present embodiment provides a control method of a silicon carbide growth process, which is the same as that of embodiment 1 except that the automatic determination of the growth chamber tightness is replaced by manual determination of the growth chamber tightness.
Example 4
The present embodiment provides a control method of a silicon carbide growth process, which is the same as that of embodiment 1 except that automatic temperature measurement hole alignment is replaced by alignment of temperature measurement holes by any operation.
Example 5
This example provides a control method for the silicon carbide growth process, which is the same as example 1, except that the full-automatic temperature control mode is replaced with a manual temperature control mode.
Example 6
This embodiment provides a control method of a silicon carbide growth process, which is the same as that of embodiment 1 except that the automatic switching control mode is replaced with a manual operation switching control mode.
Example 7
The present embodiment provides a control method of a silicon carbide growth process, which is the same as that of embodiment 1 except that the automatic parameter update is replaced with a manual parameter update.
Example 8
This example provides a control method for the silicon carbide growth process, which is the same as example 1 except that the segmentation speed automatic control is replaced by the segmentation speed manual control.
Example 9
This example provides a control method for the silicon carbide growth process, which is the same as example 1 except that the automatic emergency response is replaced by an emergency response by manual observation.
Example 10
This example provides a control method for the silicon carbide growth process, which is the same as example 1 except that the automatic furnace opening is replaced by manual furnace opening.
Comparative example 1
The present comparative example provides a control method of a silicon carbide growth process, the control method comprising:
all control parameters in the growth process are controlled by monitoring and manually judging by an on-site operator;
before the monocrystal growth starts, manually setting the coil position, and resetting the coil to a designated position by operating a key;
vacuumizing the equipment, stopping vacuumizing when the vacuum reaches the required limit, and displaying and judging the tightness of the cavity without adopting a fixed algorithm;
manually setting 0.5-10kw power to start heating, when the temperature measuring hole turns red, 2 persons cooperate (1 person observes, 1 person manually adjusts) to align the temperature measuring meter with the center of the temperature measuring hole, and when the temperature measuring hole deviates in the heating process, 2 persons cooperate to repeatedly align the temperature measuring meter;
in the heating process, the power of equipment is manually set to control the temperature (if the temperature is high, the power is slightly reduced, and if the temperature is low, the power is properly adjusted to be high), so that the process temperature cannot be accurately controlled;
in the heating process, the control mode cannot be switched and changed;
after the temperature is stable, determining a power value corresponding to the required temperature according to an empirical value, and inputting the power value into a control instrument of the equipment in a manual mode, and re-entering an instrument editing page to change a setting value of response when the power value needs to be changed;
according to the process requirements, the speed of the heating coil is changed in real time by a manual operation mode (the timeliness and consistency of the operation are difficult to control);
if abnormal conditions occur in the process of executing the process, the equipment only alarms and needs manual operation;
after the process is finished, an operator operates the equipment to open the thermal field according to the downtime to cool down.
Yield tests were conducted on silicon carbide obtained by the control method of the silicon carbide growth process in examples 1 to 10 and comparative example 1, and yield data obtained by the tests are shown in table 1.
TABLE 1
| Yield (%) | |
| Example 1 | 92 |
| Example 2 | 87 |
| Example 3 | 86 |
| Example 4 | 85 |
| Example 5 | 89 |
| Example 6 | 91 |
| Example 7 | 84 |
| Example 8 | 86 |
| Example 9 | 88 |
| Example 10 | 89 |
| Comparative example 1 | 65 |
From table 1:
(1) The silicon carbide prepared by the control method of the silicon carbide growth process in the embodiment 1 has higher yield, and the control method provided by the invention realizes the intelligent control of the whole process of the silicon carbide growth by converting all control steps in the silicon carbide growth process and all control parameters in the control steps into a growth formula control mode, reduces uncontrollable risks in the silicon carbide growth process and improves the yield;
(2) As can be seen from the comparison between the embodiment 1 and the embodiment 2, the automatic reset of the heating coil is beneficial to improving the yield of the prepared silicon carbide; in the silicon carbide growing process, a heating coil is generally used for providing proper temperature conditions, and if the heating coil has a problem or needs to be maintained, the heating coil is automatically reset; the automatic resetting of the heating coil means that after a fault or abnormal condition is detected, the system automatically resets or restarts the heating coil, so that the growth process of the silicon carbide is ensured to be suspended before the normal work is restored, and poor or unexpected results are prevented from being generated;
(3) As can be seen from the comparison of the embodiment 1 and the embodiment 3, the invention is beneficial to improving the yield of the prepared silicon carbide by automatically judging the sealability of the growth cavity; in the silicon carbide growth process, the tightness of the growth cavity plays a vital role, the quality and the growth efficiency of crystals can be influenced, and an automatic judging method is adopted to ensure the tightness of the growth cavity; according to the invention, the leakage problem in the growth process can be monitored in real time by automatically judging the tightness of the growth cavity, and measures are taken in time to repair, so that the stability and quality of the silicon carbide growth process are ensured, and the growth efficiency and yield of the silicon carbide single crystal are improved.
(4) As can be seen from the comparison between the embodiment 1 and the embodiment 4, the method of the invention is beneficial to improving the yield of the prepared silicon carbide by automatically aligning the temperature measuring holes; in the silicon carbide growth process, the dependence of manual operation can be reduced and the accuracy and consistency of alignment can be improved by automatically aligning the temperature measuring holes, so that the accuracy of temperature measurement in the growth process can be ensured, and the quality and repeatability of the silicon carbide growth can be improved.
(5) As can be seen from the comparison between the embodiment 1 and the embodiment 5, the method is beneficial to improving the yield of the prepared silicon carbide by setting the full-automatic temperature control mode; in the silicon carbide growth process, accurate and stable temperature control is realized through a full-automatic temperature control mode, so that the quality and consistency of the growth of silicon carbide crystals are ensured.
(6) As can be seen from the comparison between the embodiment 1 and the embodiment 6, the method provided by the invention is beneficial to improving the yield of the prepared silicon carbide by setting the automatic switching control mode; in the silicon carbide growth process, the control mode is automatically switched, so that the automatic adaptation to different requirements and conditions in the silicon carbide growth process is realized, the growth process of the silicon carbide is optimized, and the crystal quality, the growth rate and the repeatability are improved; meanwhile, the automatic control mode switching can also improve the production efficiency and reduce the intervention of operators.
(7) As can be seen from the comparison between the embodiment 1 and the embodiment 7, the automatic updating of the setting parameters is beneficial to improving the yield of the prepared silicon carbide; in the silicon carbide growth process, the dynamic adjustment of the growth condition is realized by the automatic parameter updating mode, and the control parameters can be automatically adjusted according to real-time measurement data and system requirements in the silicon carbide growth process, so that better growth effect and control performance are achieved, the stability, consistency and production efficiency of the silicon carbide growth are improved, and manual operation is reduced.
(8) As can be seen from the comparison between the embodiment 1 and the embodiment 8, the method is beneficial to improving the yield of the prepared silicon carbide by setting the automatic control of the segmentation speed; in the silicon carbide growth process, the growth speed is automatically regulated according to different stages and real-time data in the silicon carbide growth process by automatic control of the sectional speed so as to meet specific requirements, thereby being beneficial to improving the crystal quality and increasing the growth speed and realizing a more reliable and efficient growth process; meanwhile, the automatic control of the segmentation speed can also reduce the intervention and errors of operators, and improve the production consistency and repeatability;
(9) As can be seen from the comparison between the embodiment 1 and the embodiment 9, the invention is beneficial to improving the yield of the prepared silicon carbide by setting the automatic emergency response; the automatic emergency response in the invention can timely and accurately respond to abnormal conditions in the silicon carbide growth process, and necessary measures are taken to ensure the stability, safety and reliability of the silicon carbide growth process, thereby being beneficial to reducing potential risks, improving the growth quality and reducing the burden and errors of operators. At the same time, data may also be recorded and analyzed to further optimize the growth process and improve device performance.
(10) As can be seen from the comparison between the embodiment 1 and the embodiment 10, the invention is beneficial to improving the yield of the prepared silicon carbide by setting the automatic furnace opening; in the silicon carbide growth process, in the automatic furnace opening process, integrity check is automatically carried out, including detection of whether abnormal conditions exist, such as temperature deviation, pressure abnormality or combustion problems, if abnormal conditions are found, the system can trigger an alarm, automatically stop the furnace opening process, and simultaneously inform operators of carrying out necessary treatment and maintenance.
(11) As can be seen from the comparison between the embodiment 1 and the comparative example 1, the control method provided by the invention realizes the intelligent control of the whole process of the silicon carbide growth by converting all control steps in the silicon carbide growth process and all control parameters in the control steps into a growth formula control mode, reduces the uncontrollable risk in the silicon carbide growth process, improves the yield, reduces the labor cost and improves the production efficiency.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that fall within the technical scope of the present invention disclosed herein are within the scope of the present invention.
Claims (10)
1. A method for controlling a silicon carbide growth process, the method comprising: a unified growth formula is adopted to control the growth process of the silicon carbide;
the growth recipe includes all control steps in the growth process of silicon carbide and all control parameters in the control steps.
2. The control method according to claim 1, characterized in that the control step includes automatic resetting of the heating coil;
preferably, the automatic resetting of the heating coil includes: the heating coil is controlled to be automatically reset to the same position of the equipment in a unified way.
3. The control method according to claim 1 or 2, characterized in that the control step includes automatic determination of growth chamber tightness;
preferably, the automatic determination of growth chamber tightness includes: and automatically judging whether the tightness of the ingot growth chamber meets the standard by adopting a pressure rise rate fixing algorithm.
4. A control method according to any one of claims 1 to 3, wherein the controlling step includes automatically performing temperature measurement hole alignment;
preferably, the automatic temperature measurement hole alignment includes: the growth formula adopts a thermal imaging identification mode to realize automatic alignment of the temperature measuring holes;
preferably, the automatic temperature measurement hole alignment further comprises: when the temperature measuring hole is shifted in the growth process, the temperature measuring cursor is automatically adjusted according to the shift position of the temperature measuring hole, so that the temperature measuring accuracy is ensured.
5. The control method according to any one of claims 1 to 4, characterized in that the control step includes a full-automatic temperature control mode;
preferably, the fully automatic temperature control mode includes: the same temperature target and control time are set, and the automatic growth formula control equipment reaches the same temperature in the same time.
6. The control method according to any one of claims 1 to 5, characterized in that the control step includes automatically switching a control mode;
preferably, the automatic switching control mode includes: the growth formula adopts a fixed average algorithm, and the control of the growth process automatically completes the mutual switching among power, temperature and current.
7. The control method according to any one of claims 1 to 6, characterized in that the control step includes automatic parameter update;
preferably, the automatic parameter updating includes: after the temperature control mode is switched, according to an algorithm of the average power and the built-in compensation power of the equipment, new growth process parameters matched with the equipment are automatically generated so as to control the crystal growth process to be continuously carried out;
preferably, the controlling step includes the heating coil being automatically controlled by a sectional speed;
preferably, the automatic control of the segment speed includes: the heating coil is automatically controlled by using the same formula to realize that different growth stages correspond to different moving speeds;
preferably, the controlling step includes an automatic emergency response;
preferably, the automatic emergency response includes: in the crystal growth process, when the factory conditions exceed the specified range, automatically starting emergency operation matched with the factory conditions according to the changed factory conditions;
preferably, the controlling step includes automatic furnace opening;
preferably, the automatic furnace opening comprises: and in the final stage of the silicon carbide single crystal growth program, automatically controlling the single crystal furnace to open a furnace cover to perform thermal field natural cooling.
8. A silicon carbide prepared by the control method of any one of claims 1 to 7.
9. An apparatus for use in a silicon carbide growth process, the apparatus comprising a growth recipe control system for controlling the growth process of silicon carbide using a uniform growth recipe.
10. The apparatus according to claim 9, characterized in that the apparatus comprises:
the heating coil automatic resetting module is used for uniformly controlling the heating coil to be automatically reset to the same position of the equipment;
the automatic judging module for the tightness of the growth cavity is used for automatically judging whether the tightness of the growth cavity of the ingot reaches the standard or not by adopting a pressure rise rate fixing algorithm;
the automatic temperature measuring hole alignment module is used for realizing automatic alignment of the temperature measuring holes by adopting a thermal imaging identification mode for the growth formula, and automatically adjusting a temperature measuring cursor according to the offset position of the temperature measuring holes when the temperature measuring holes are offset in the growth process, so that the temperature measuring accuracy is ensured;
the full-automatic temperature control module is used for setting the same temperature target and control time, and the automatic growth formula control equipment reaches the same temperature in the same time;
the automatic switching control module is used for controlling the growth formula to adopt a fixed average algorithm to automatically finish the mutual switching among power, temperature and current in the growth process;
the parameter automatic updating module is used for automatically generating new growth process parameters matched with the equipment according to an algorithm of the average power and the built-in compensation power of the equipment after the temperature control mode is switched so as to control the crystal growth process to be continuously carried out;
the automatic control module of the sectional speed is used for using the same formula to automatically control the heating coil to realize that different growth stages correspond to different moving speeds;
the automatic emergency response module is used for automatically starting emergency operation matched with the factory conditions according to the changed factory conditions when the factory conditions exceed the specified range in the crystal growth process;
and the automatic furnace opening module is used for automatically controlling the single crystal furnace to open a furnace cover to perform thermal field natural cooling in the final stage of the silicon carbide single crystal growth program.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016152813A1 (en) * | 2015-03-24 | 2016-09-29 | 新日鐵住金株式会社 | Method for producing silicon carbide single crystal |
| CN205711036U (en) * | 2016-06-12 | 2016-11-23 | 河北同光晶体有限公司 | A kind of device monitoring carborundum crystals furnace temperature |
| CN112663134A (en) * | 2020-11-30 | 2021-04-16 | 山西烁科晶体有限公司 | Double-temperature-zone independently controlled silicon carbide single crystal growth device and growth method |
| CN113502542A (en) * | 2021-09-10 | 2021-10-15 | 江苏超芯星半导体有限公司 | Growth control system and method for silicon carbide crystal by HTCVD method |
| CN116607216A (en) * | 2023-07-20 | 2023-08-18 | 苏州优晶光电科技有限公司 | Method and system for adjusting internal temperature field of resistance silicon carbide growth furnace and growth method |
-
2023
- 2023-11-14 CN CN202311509972.9A patent/CN117552107A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016152813A1 (en) * | 2015-03-24 | 2016-09-29 | 新日鐵住金株式会社 | Method for producing silicon carbide single crystal |
| CN205711036U (en) * | 2016-06-12 | 2016-11-23 | 河北同光晶体有限公司 | A kind of device monitoring carborundum crystals furnace temperature |
| CN112663134A (en) * | 2020-11-30 | 2021-04-16 | 山西烁科晶体有限公司 | Double-temperature-zone independently controlled silicon carbide single crystal growth device and growth method |
| CN113502542A (en) * | 2021-09-10 | 2021-10-15 | 江苏超芯星半导体有限公司 | Growth control system and method for silicon carbide crystal by HTCVD method |
| CN116607216A (en) * | 2023-07-20 | 2023-08-18 | 苏州优晶光电科技有限公司 | Method and system for adjusting internal temperature field of resistance silicon carbide growth furnace and growth method |
Non-Patent Citations (1)
| Title |
|---|
| 蔡国飚: "真空羽流效应实验系统设计", vol. 2016, 29 February 2016, 国防工业出版社, pages: 56 * |
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