CN117551980A - Two-dimensional transition metal selenide and preparation method thereof - Google Patents
Two-dimensional transition metal selenide and preparation method thereof Download PDFInfo
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- CN117551980A CN117551980A CN202311547922.XA CN202311547922A CN117551980A CN 117551980 A CN117551980 A CN 117551980A CN 202311547922 A CN202311547922 A CN 202311547922A CN 117551980 A CN117551980 A CN 117551980A
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- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 42
- -1 transition metal selenide Chemical class 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 150000003839 salts Chemical class 0.000 claims description 47
- 239000011669 selenium Substances 0.000 claims description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 28
- 229910052711 selenium Inorganic materials 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 18
- 150000003624 transition metals Chemical class 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 239000010453 quartz Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 4
- 150000003346 selenoethers Chemical class 0.000 abstract description 4
- 239000002356 single layer Substances 0.000 description 16
- 238000001816 cooling Methods 0.000 description 12
- 239000011734 sodium Substances 0.000 description 12
- 229910016001 MoSe Inorganic materials 0.000 description 11
- 239000010410 layer Substances 0.000 description 9
- 238000001237 Raman spectrum Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000000399 optical microscopy Methods 0.000 description 6
- 238000000103 photoluminescence spectrum Methods 0.000 description 6
- 238000004321 preservation Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the technical field of two-dimensional selenides, in particular to a two-dimensional transition metal selenide and a preparation method thereof.
Description
Technical Field
The invention relates to the technical field of two-dimensional selenides, in particular to a two-dimensional transition metal selenide and a preparation method thereof.
Background
In recent years, two-dimensional transition metal selenides (Two-Dimensional Transition Metal Selenides,2D TMSe) have shown tremendous potential in catalytic, gas-sensitive, energy storage and conversion, and electronic/optoelectronic device applications. Chemical vapor deposition (Chemical Vapor Deposition, CVD) is one of the most potential techniques suitable for large-scale synthesis of 2D TMSe. At present, a variety of different CVD methods have been developed for growing 2D TMSe, such as conventional CVD (high temperature selenization of transition metal oxide with selenium (Se) powder), halogen-assisted CVD, and molten salt-assisted CVD, but these methods suffer from a number of disadvantages: the synthetic operation steps such as the traditional CVD are complex and the quality of the obtained sample is poor; uneven evaporation of the transition metal precursor in the halogen salt-assisted CVD method easily causes difficulty in controlling the thickness of the sample, and simultaneously, many byproducts are easily produced; the main problem of the fused salt assisted CVD technology is that the thickness and the size of a sample are difficult to control due to nonuniform evaporation of selenium element, and the defects are unfavorable for the synthesis of high-quality 2D TMSE. Therefore, the development of a novel CVD technology with convenient operation, time and labor saving, economy and universality for synthesizing 2D TMSE is very important to promote the research and application of the novel CVD technology.
Disclosure of Invention
The invention aims to solve the problem of how to develop a novel CVD technology with convenient operation, time and labor saving, economy and strong universality for preparing 2D TMSe, and provides a two-dimensional transition metal selenide and a preparation method thereof.
In order to achieve the above purpose, the invention discloses a preparation method of a two-dimensional transition metal selenide, which comprises the following steps:
s1, mixing a transition metal oxyacid salt and a selenium-containing element salt, then placing the mixture into an open container, placing a growth substrate above the container, and then placing the container into a tube furnace;
and S2, introducing mixed gas of hydrogen and inert gas into the tubular furnace, heating the mixed salt powder obtained in the step S1, and maintaining the temperature for reaction after the temperature reaches the growth temperature to grow the 2D TMSe.
The transition metal oxyacid salt in the step S1 is K 2 MoO 4 The selenium-containing salt is Na 2 Se, the growth temperature in the step S2 is 760 ℃.
The transition metal oxyacid salt in the step S1 is Na 2 WO 4 ·2H 2 O and selenium-containing salt is Na 2 Se, the growth temperature in the step S2 is 800 ℃.
The transition metal oxyacid salt in the step S1 is NaReO 4 The selenium-containing salt is Na 2 Se, the growth temperature in the step S2 is 700 ℃.
In the step S1, the mol ratio of the transition metal oxyacid salt to the selenium-containing element salt is 1:9.
The open container in the step S1 is a quartz boat or a ceramic boat.
The growth substrate in the step S1 is alumina or a silicon wafer with a silicon oxide layer on the surface.
The inert gas in the step S2 is nitrogen or argon.
The heating rate in the step S2 is 20 ℃/min.
The invention also discloses a two-dimensional transition metal selenide prepared by the preparation method.
Compared with the prior art, the invention has the beneficial effects that: the method for preparing the single-layer/multi-layer 2D TMSe has the characteristics of high control of the layer number, low energy consumption, simple and convenient operation, economy and strong universality. The problem that selenium evaporation is difficult to control can be effectively solved by replacing a selenium source from selenium powder used in a traditional CVD method to selenium-containing salt, and the transition metal oxonate powder and the selenium-containing salt powder are mixed according to a molar ratio and are uniformly ground, so that the distribution of a selenium precursor in a raw material is more uniform, and high-quality uniform 2D TMSe can be obtained in subsequent growth.
Drawings
FIG. 1 is a schematic view of a tube furnace used in the present invention;
FIG. 2 is a sheet in example 1 of the present inventionLayer MoSe 2 Figure 2a is a representation of a sample example single layer MoSe 2 FIG. 2b is a photograph of an example sample of single layer MoSe 2 FIG. 2c is a Raman spectrum of a sample of example single-layer MoSe 2 Is a photoluminescence spectrum of (2);
FIG. 3 is a single layer WSe of example 3 of the present invention 2 Figure 3a is a representation of a sample monolayer of WSe of the example 2 FIG. 3b is an optical microscope photograph of a sample of an example monolayer WSe 2 FIG. 3c shows a Raman spectrum of a sample of example monolayer WSe 2 Is a photoluminescence spectrum of (2);
FIG. 4 is a diagram of a few-layer ReSe in example 5 of the present invention 2 FIG. 4a is a representation of example sample few layer ReSe 2 FIG. 4b is an optical microscope photograph of a sample of the example, less layer of ReSe 2 FIG. 4c shows the Raman spectrum of the sample of the example with less ReSe layer 2 Is a photoluminescence spectrum of (2);
FIG. 5 is a characterization of selenide obtained at various temperatures in examples 1-6 of the invention, FIGS. 5a and 5b are MoSe grown at 760℃and 860℃respectively 2 Optical microscopy pictures, FIGS. 5c and 5d are WSe grown at 760℃and 800℃respectively 2 Optical microscopy pictures, FIGS. 5e and 5f are ReSe grown at 700℃and 800℃respectively 2 Optical microscopy pictures.
The figures represent the numbers:
1-a heater; 2-an open container; 3-a growth substrate; 4-a growth furnace chamber.
Detailed Description
The above and further technical features and advantages of the present invention are described in more detail below with reference to the accompanying drawings.
The invention relates to a method for preparing a single-layer/multi-layer 2D TMSE by using a mixed salt precursor, which mainly comprises the following two steps: the first step is to mix the transition metal oxinate powder and the selenium-containing salt powder according to a certain mole ratio, and the second step is to synthesize the single-layer/few-layer 2D TMSe by using a CVD technology.
Mixing the transition metal oxyacid salt powder and the selenium-containing salt powder according to a certain molar ratio, specifically, weighing a certain amount of the selenium-containing salt powder, calculating the mass of the transition metal oxyacid salt powder to be weighed according to the molar ratio, pouring the weighed transition metal oxyacid salt powder into a mortar to mix with the selenium-containing salt powder, and grinding the mixture with a mortar pestle to fully and uniformly mix the powder with the selenium-containing salt powder.
The synthesis step of the 2D TMSE comprises the following steps:
s11: mixing transition metal oxidate powder and selenium-containing salt powder according to a certain mole ratio, placing the mixture into an open container, placing a growth substrate above the container, and then placing the container into a tube furnace;
s12: introducing mixed gas of hydrogen and inert gas (nitrogen, argon and the like) into the tube furnace at a certain flow rate, and heating the mixture; after the growth temperature is reached, the temperature is maintained for a certain time to grow 2D TMSe on the growth substrate.
FIG. 1 is a schematic view of the structure of a tube furnace used in the above steps. Wherein 1 is a heater, 2 is an open container, 3 is a growth substrate placed over the open container, and 4 is a growth furnace chamber.
In the 2D TMSe synthesis step, the transition metal oxyacid salt powder may be a sodium salt containing a target transition metal element, or may be a potassium salt containing a target transition metal element or other salts containing a target transition metal element; the selenium-containing salt can be sodium salt containing selenium, potassium salt containing selenium or other salts containing sulfur. The present invention can produce most types of 2D TMSe by selecting appropriate transition metal oxyates and selenium-containing salts.
Example 1
2mg of Na in a molar ratio of 9:1 2 Se/K 2 MoO 4 Placing the mixed salt in a quartz boat, and growing a substrate SiO 2 Si is placed directly above the mixture; putting the quartz boat into a tube furnace, heating the mixture to 760 ℃ at a heating rate of 20 ℃/min, and preserving the heat for 10 minutes; after the reaction is finished, naturally cooling the system to room temperature and closing the gas to finish MoSe 2 Is a growth of (a). The flow rate of the nitrogen/hydrogen mixed gas is always kept to be 302 cubic centimeters per minute (Standard Cubic Centimeter per Minute, SCCM) in the heating, heat preservation and cooling processes, wherein the flow rate of the nitrogen is 300SCCM, and the flow rate of the hydrogen is 2SCCM.
Example 2
2mg of Na in a molar ratio of 9:1 2 Se/K 2 MoO 4 Placing the mixed salt in a quartz boat, and growing a substrate SiO 2 Si is placed directly above the mixture; putting the quartz boat into a tube furnace, heating the mixture to 860 ℃ at a heating rate of 20 ℃/min, and preserving the heat for 10 minutes; after the reaction is finished, naturally cooling the system to room temperature and closing the gas to finish MoSe 2 Is a growth of (a). The flow of the mixed gas of nitrogen and hydrogen is always kept to be 302SCCM in the heating, heat preservation and cooling processes, wherein the flow of the nitrogen is 300SCCM, and the flow of the hydrogen is 2SCCM.
Example 3
4mg of Na in a molar ratio of 9:1 2 Se/Na 2 WO 4 ·2H 2 Placing the O mixed salt in a quartz boat, and growing a substrate SiO 2 Si is placed directly above the mixture; putting the quartz boat into a tube furnace, heating the mixture to 760 ℃ at a heating rate of 20 ℃/min, and preserving the heat for 10 minutes; after the reaction is finished, naturally cooling the system to room temperature and closing the gas to finish WSe 2 Is a growth of (a). The flow of the mixed gas of nitrogen and hydrogen is always kept to be 302SCCM in the heating, heat preservation and cooling processes, wherein the flow of the nitrogen is 300SCCM, and the flow of the hydrogen is 2SCCM.
Example 4
3mg of Na in a molar ratio of 9:1 2 Se/Na 2 WO 4 ·2H 2 Placing the O mixed salt in a quartz boat, and growing a substrate SiO 2 Si is placed directly above the mixture; putting the quartz boat into a tube furnace, heating the mixture to 800 ℃ at a heating rate of 20 ℃/min, and preserving the heat for 10 minutes; after the reaction is finished, naturally cooling the system to room temperature and closing the gas to finish WSe 2 Is a growth of (a). The flow of the mixed gas of nitrogen and hydrogen is always kept to be 302SCCM in the heating, heat preservation and cooling processes, wherein the flow of the nitrogen is 300SCCM, and the flow of the hydrogen is 2SCCM.
Example 5
4mg of Na in a molar ratio of 9:1 2 Se/NaReO 4 The mixed salt is placed in a quartz boatAnd growing substrate SiO 2 Si is placed directly above the mixture; putting the quartz boat into a tube furnace, heating the mixture to 700 ℃ at a heating rate of 20 ℃/min, and preserving the heat for 10 minutes; after the reaction is finished, naturally cooling the system to room temperature and closing the gas to finish the ReSe 2 Is a growth of (a). The flow of the mixed gas of nitrogen and hydrogen is always kept to be 302SCCM in the heating, heat preservation and cooling processes, wherein the flow of the nitrogen is 300SCCM, and the flow of the hydrogen is 2SCCM.
Example 6
4mg of Na in a molar ratio of 9:1 2 Se/NaReO 4 Placing the mixed salt in a quartz boat, and growing a substrate SiO 2 Si is placed directly above the mixture; putting the quartz boat into a tube furnace, heating the mixture to 800 ℃ at a heating rate of 20 ℃/min, and preserving the heat for 10 minutes; after the reaction is finished, naturally cooling the system to room temperature and closing the gas to finish the ReSe 2 Is a growth of (a). The flow of the mixed gas of nitrogen and hydrogen is always kept to be 302SCCM in the heating, heat preservation and cooling processes, wherein the flow of the nitrogen is 300SCCM, and the flow of the hydrogen is 2SCCM.
FIG. 2 is a sample single layer MoSe of example 1 of the present invention 2 Is characterized by (3). Wherein FIG. 2a is a sample example single layer MoSe 2 An optical microscope of (2) shows a typical triangular morphology of a growth sample, FIGS. 2b and 2c are, respectively, single-layer MoSe 2 Raman spectra and photoluminescence spectra of (c).
FIG. 3 is a sample monolayer WSe of example 3 of the present invention 2 Is characterized by (3). Wherein FIG. 3a is an example sample monolayer WSe 2 Is an optical microscope of (a) showing a typical triangular morphology of a growth sample, FIGS. 3b and 3c are, respectively, a monolayer of WSe 2 Raman spectra and photoluminescence spectra of (c).
FIG. 4 is a sample of example 5 of the present invention, reSe 2 Is characterized by (3). Wherein FIG. 4a is a sample of an example ReSe 2 An optical microscope picture of a growth sample is shown. FIGS. 4b and 4c are, respectively, reSe 2 Raman spectra and photoluminescence spectra of (c).
FIG. 5 shows the different temperatures in examples 1 to 6 according to the inventionOptical microscopy of selenide obtained at the same level. FIGS. 5a and 5b are MoSe grown at 760℃and 860℃respectively 2 Optical microscopy pictures, FIGS. 5c and 5d are WSe grown at 760℃and 800℃respectively 2 Optical microscopy pictures, FIGS. 5e and 5f are ReSe grown at 700℃and 800℃respectively 2 Optical microscopy pictures. The figure shows that the quality of the sample is closely related to the growth temperature, and the technology can regulate and control the quality of the sample by regulating the growth temperature.
The foregoing description of the preferred embodiment of the invention is merely illustrative of the invention and is not intended to be limiting. It will be appreciated by persons skilled in the art that many variations, modifications, and even equivalents may be made thereto without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. The preparation method of the two-dimensional transition metal selenide is characterized by comprising the following steps of:
s1, mixing a transition metal oxyacid salt and a selenium-containing element salt, then placing the mixture into an open container, placing a growth substrate above the container, and then placing the container into a tube furnace;
and S2, introducing mixed gas of hydrogen and inert gas into the tubular furnace, heating the mixed salt powder obtained in the step S1, and maintaining the temperature for reaction after the growth temperature is reached, so as to grow the two-dimensional transition metal selenide.
2. The method for preparing a two-dimensional transition metal selenide compound according to claim 1, wherein the transition metal oxy-acid salt in the step S1 is K 2 MoO 4 The selenium-containing salt is Na 2 Se, the growth temperature in the step S2 is 760 ℃.
3. The method for preparing a two-dimensional transition metal selenide compound according to claim 1, wherein the transition metal oxy-acid salt in the step S1 is Na 2 WO 4 ·2H 2 O and selenium-containing salt is Na 2 Se, ofThe growth temperature in step S2 is 800 ℃.
4. The method for preparing a two-dimensional transition metal selenide according to claim 1, wherein the transition metal oxy-acid salt in the step S1 is NaReO 4 The selenium-containing salt is Na 2 Se, the growth temperature in the step S2 is 700 ℃.
5. The method for preparing a two-dimensional transition metal selenide e according to claim 1, wherein the molar ratio of the transition metal oxy-acid salt to the selenium-containing salt in the step S1 is 1:9.
6. The method for preparing a two-dimensional transition metal selenide compound according to claim 1, wherein the open container in the step S1 is a quartz boat or a ceramic boat.
7. The method for preparing a two-dimensional transition metal selenide compound according to claim 1, wherein the growth substrate in the step S1 is alumina or a silicon wafer with a silicon oxide layer on the surface.
8. The method for preparing a two-dimensional transition metal selenide compound according to claim 1, wherein the inert gas in the step S2 is nitrogen or argon.
9. The method for preparing a two-dimensional transition metal selenide compound according to claim 1, wherein the heating rate in the step S2 is 20 ℃/min.
10. A two-dimensional transition metal selenide prepared by the preparation method according to any one of claims 1 to 9.
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| CN202311547922.XA CN117551980A (en) | 2023-11-20 | 2023-11-20 | Two-dimensional transition metal selenide and preparation method thereof |
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| CN202311547922.XA CN117551980A (en) | 2023-11-20 | 2023-11-20 | Two-dimensional transition metal selenide and preparation method thereof |
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