CN117626422A - Two-dimensional GaS prepared by pretreatment growth source CVD method - Google Patents
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Abstract
The invention discloses a two-dimensional GaS prepared by a pretreatment growth source CVD method, which comprises the following steps: 1) Pretreatment of growth source Ga 2 S 3 ：Ga 2 S 3 Powder in Ar and H 2 Calcining under atmosphere to obtain a mixture containing GaS and Ga 2 S 3 Is used for pretreating a growth source; 2) Adding Ga into the pretreated growth source obtained in the step 1) 2 S 3 Powder to obtain mixed powder of reaction sources; 3) Mixing the reaction sources obtained in the step 2)Taking the mixed powder as a growth source, and adopting a CVD method to prepare two-dimensional GaS; the conditions of firing time, growth temperature, etc. of the pre-firing step can influence the size and thickness of the GaS single crystal material obtained by the CVD method. The method can be used for preparing two-dimensional GaS single crystals and films with large size and uniform layer number, and promotes the further development of applications such as optoelectronic devices, field effect transistors, flexible electronic devices and the like in a blue-violet light range.
Description
Technical Field
The invention belongs to the technical field of two-dimensional material preparation, and particularly relates to a method for preparing a two-dimensional GaS by adopting a pretreatment growth source.
Background
The group IIIA-VIA compound is an important semiconductor material, and has great interest in the field of photoelectric devices because of the adjustable band gap, excellent optical absorption characteristics and high carrier mobility. There are two categories based on the stoichiometry: one is MX (e.g. GaS, gaSe, inSe, etc.), the other is M a X b (e.g. Ga 2 Se 3 、In 2 Se 3 、In 3 Se 4 Etc.), materials with different stoichiometric ratios exhibit different crystal structures and physicochemical properties, further expanding the variety of materials. GaS of the MX type, in which the vertical structure is S-Ga-Ga-S, is an indirect bandgap semiconductor whose bandgap can be varied from 2.59eV for a bulk to 3.4eV for a monolayer. The two-dimensional GaS shows excellent performances of high responsivity, high detection rate, short response time and the like in the field of blue-violet photoelectric detection. In addition, the two-dimensional GaS-based structure also has the characteristics of flexibility, saturated absorptivity and high activation energy, so that the two-dimensional GaS-based structure has great advantages in the aspects of nonlinear optics, electrochemistry, flexible devices and the like. Thus, the preparation of two-dimensional GaS appears to be critical.
Currently, methods for preparing two-dimensional GaS mainly include a mechanical stripping method, a liquid phase stripping method, a chemical vapor deposition method and the like. The two-dimensional GaS obtained by using a mechanical stripping method and a liquid phase stripping method has smaller size, irregular shape and uneven layer number, and limits the further application of the material. The chemical vapor deposition method has the advantages of large size, high quality and repetition of the synthesized sampleThe method has the advantages of strong property, applicability to industrial production and the like, but the two-dimensional GaS prepared by the current CVD method has the problems of large nucleation density, small size, defects and the like. In order to solve the problems in growth preparation, we have adopted a CVD method for pretreating the growth source, the pretreatment process involving two steps, the first step being for pure Ga 2 S 3 Is pre-burned to obtain a powder comprising two different stoichiometric ratios (GaS and Ga 2 S 3 ) In the second step, pure Ga is taken again 2 S 3 Mixing with presintered powder, and taking the pretreated mixture as a growth source in the method. The content of GaS in a growth source can be regulated and controlled by adjusting the presintering time, so that the size of the two-dimensional GaS single crystal is regulated and controlled, and finally, the preparation of the two-dimensional GaS single crystal with large size, high quality and uniform layer number is realized; in addition, the preparation of two-dimensional GaS single crystals with different layers can be realized by changing the growth temperature. The preparation of the two-dimensional GaS monocrystal and the film with large size, high quality and controllable layer number is a precondition for realizing the wide utilization of the two-dimensional GaS monocrystal and the film, and the invention provides a certain reference meaning for the aspects of controllable preparation, physical property research, application and the like of the two-dimensional GaS.
Disclosure of Invention
The invention aims to solve the problems of small size, uneven layer number and poor crystallization quality of two-dimensional GaS, and provides the two-dimensional GaS prepared by a pretreatment growth source which has large size and high quality and can acquire Raman signals.
The two-dimensional GaS prepared by the pretreatment growth source CVD method is characterized in that: the pretreatment growth source CVD method comprises the following steps:
1) Pretreatment of growth source Ga 2 S 3 ：Ga 2 S 3 Powder in Ar and H 2 Calcining under atmosphere to obtain a mixture containing GaS and Ga 2 S 3 Is used for pretreating a growth source;
2) Adding Ga into the pretreated growth source obtained in the step 1) 2 S 3 Powder to obtain mixed powder of reaction sources;
3) Taking the reaction source mixed powder obtained in the step 2) as a growth source, and adopting a CVD method to prepare two-dimensional GaS;
the CVD method of the step 3), wherein the reaction temperature of the mixed powder of the reaction source is 800-860 ℃; the growth temperature of GaS is 670-730 ℃.
The content of GaS in the reaction source mixed powder in the step 3) is 0.70-3.36 percent respectively;
the GaS content in the reaction source mixed powder is 2.78%;
the CVD method of the step 3), the growth time of GaS is 35-55 min;
the reaction temperature of the mixed powder of the reaction sources is 820 ℃; the growth temperature of GaS is 690 ℃;
the growth time is 35, 45 or 55 min;
the CVD method of step 3), wherein the substrate on which the GaS material grows comprises silicon wafer, sapphire, mica or quartz.
The invention provides a two-dimensional GaS prepared by a pretreatment growth source CVD method, which is used for preparing a two-dimensional GaS material. The main content is to pretreat the growth source needed by the CVD method for preparing GaS, which comprises two steps of presintering and mixing. The presintering step is to make pure Ga 2 S 3 Powder at H 2 Firing for a period of time (5-70 min) under atmosphere to obtain a composition containing GaS and Ga 2 S 3 Pre-sintered powders of two components; the mixing step is to mix the non-presintered Ga 2 S 3 Grinding the powder and the presintered powder according to a certain proportion, and fully mixing. The resultant mixed powder is used as a growth source for growing GaS material by CVD. The conditions of firing time, growth temperature, etc. of the pre-firing step can influence the size and thickness of the GaS single crystal material obtained by the CVD method. The method can be used for preparing two-dimensional GaS single crystals and films with large size and uniform layer number, and promotes the further development of applications such as optoelectronic devices, field effect transistors, flexible electronic devices and the like in a blue-violet light range.
The invention has the advantages and beneficial effects that:
1) Compared with the common CVD method, the method has the advantages that the pretreatment growth source method is adopted to prepare the two-dimensional GaS, and the pretreatment growth source is more beneficial to generating the product GaS;
2) The two-dimensional GaS monocrystal and the film prepared by the pretreatment growth source method have the characteristics of large size, high quality and uniform layer number, provide more choices for the aspects of blue-violet response optoelectronic devices, field effect transistors, flexible electronic devices and the like of the two-dimensional GaS with the high quality and uniform layer number, and provide references for the preparation of other IIIA-VIA two-dimensional materials;
3) The pretreatment growth source method provided by the invention can carry out chemical reaction under normal pressure chemical vapor deposition, so that the sample preparation has the advantages of convenient operation, easy thickness regulation and control and easy large-size preparation;
4) The morphology of the prepared GaS monocrystal is an independent triangle, and the maximum size of the GaS monocrystal can reach 240 mu m. As shown in FIG. 4b, the thickness of the resulting GaS single crystal was 0.85. 0.85 nm as characterized by atomic force microscopy, confirming that the large-size GaS single crystal we obtained was a single layer. FIG. 4c shows a Raman spectrum of a GaS single crystal with a vibrational peak at 183.1. 183.1 cm -1 (A 1g )、356.6 cm -1 (A 2g )。
Drawings
Fig. 1 shows a pre-sintering experimental apparatus for preparing large-size high-quality GaS by a pretreatment growth source method: 1 a gas inlet; 2 pre-firing the powder; 3, a gas outlet; 4, heating a furnace;
FIG. 2 is an X-ray diffraction spectrum of a pre-sintered powder;
FIG. 3 is an experimental set-up for preparing large-size, high-quality GaS using a pretreatment growth source method: 1. a gas inlet; 2. a growth source; 3. a growth substrate; 4. a gas outlet; 5, heating a furnace;
FIG. 4 growth on SiO 2 Optical microscope image, atomic force microscope image and raman spectrum of a uniform monolayer GaS single crystal of Si surface;
FIG. 5 is a scanning electron microscope image of a GaS single crystal sample prepared by a conventional CVD method and a corresponding Raman spectrum;
FIG. 6 is a scanning electron microscope image of different sizes of GaS single crystals;
FIG. 7 atomic force microscope images of GaS single crystals of different thicknesses;
FIG. 8 optical images of GaS single crystals grown on different substrates and corresponding Raman spectra;
fig. 9 is a scanning electron microscope image of different growth time GaS.
Detailed Description
Example 1 pretreatment of growth Source method two-dimensional GaS
The pre-sintering step of the pre-treated growth source is shown in fig. 1, a quartz tube is embedded in the horizontal reaction furnace, a gas inlet 1 and a gas outlet 3 are respectively arranged at two ends of the horizontal reaction furnace, and pre-sintered powder is positioned at a central temperature zone 2 of the reaction furnace. Ga is added 2 S 3 Powder (white, 99.999% purity) 50mg was placed in the central high temperature zone of a horizontal reactor (furnace tube diameter 25 mm); firstly pumping Ar for 10 min to exhaust air in a furnace tube, then heating the furnace to 820 ℃ in Ar atmosphere (the flow of Ar is 80 sccm), heating the furnace to 700 ℃ at a heating rate of 35 ℃/min, heating the furnace to 820 ℃ at a heating rate of 10 ℃/min, and pumping Ar and H when the furnace temperature is raised to 820 ℃ 2 Is mixed with the gas (gas flow rate: ar: 55 sccm, H, respectively) 2 35 sccm) of H in the mixed gas at this time 2 Will be with Ga 2 S 3 After the partial reduction reaction is carried out and the presintering reaction time lasts for 30 min, the powder is pushed out of a high temperature area so that the sample is rapidly cooled at room temperature, and the obtained product is yellow powder. The components of the yellow powder material were measured by X-ray diffraction (XRD) in FIG. 2, and by comparison with the PDF standard card, diffraction peaks were found to correspond to PDF #74-0227 and PDF #76-0752 in the PDF standard card, confirming that the pre-burned powder contains GaS and Ga 2 S 3 Two components, as shown in figure 2.
The mixing step of the pretreated growth source comprises the steps of 2 S 3 Mixing with the presintered powder according to the weight of 11:2 to obtain mixed powder serving as a growth source. The method comprises the following steps: taking 55 mg unsintered Ga 2 S 3 The powder and the pre-sintered powder of 10 mg are mixed together and sufficiently ground to make the mixed powder more uniform. The whole mixed powder was used as a growth source for preparing two-dimensional GaS by CVD method, in which case the GaS content in the mixed powder was 2.8% and Ga in this example 2 S 3 The content was 97.2%.
The growth and preparation process of the two-dimensional GaS is shown in FIG. 3, and the two-dimensional GaS is horizontalThe two ends of the reaction furnace are respectively provided with a gas inlet 1 and a gas outlet 4, and the mixed powder of the growth source is positioned at the central temperature zone 2 of the reaction furnace (0 cm part from the central temperature zone); the reaction substrate silicon wafer is placed at a position 3 (a position away from a central temperature zone 13 and cm) downstream of a high temperature zone of the horizontal reaction furnace, and the temperature of the zone is the growth temperature of the two-dimensional GaS. Before two-dimensional GaS grows, firstly, introducing Ar for 10 min to exhaust air in a furnace tube, then heating the reaction furnace to 820 ℃ in Ar atmosphere (Ar flow is 80 sccm), and heating up to 700 ℃ at a speed of 35 ℃/min, and then heating up to 820 ℃ at a speed of 10 ℃/min. At this time, the temperature of the growth source at the position 2 was 820℃and the temperature of the reaction substrate at the position 3 was 690 ℃. During the growth of two-dimensional GaS, ar and H are introduced 2 Is mixed with the gas (gas flow rate: ar: 55 sccm, H, respectively) 2 35 sccm), the mixed powder of the growth source at the upstream position 2 can be subjected to reduction reaction along with the diffusion of the mixed GaS to the surface of the silicon wafer of the growth substrate at the downstream position 3, after the growth time lasts for 35 min, the silicon wafer is pushed out of a high-temperature area to enable the sample to be rapidly cooled at room temperature, and finally, a large-size two-dimensional GaS single crystal sample is obtained on the surface of the silicon wafer.
The morphology and structure of the samples were characterized using an optical microscope, atomic force microscope and raman spectrometer as shown in fig. 4 a. The morphology of the prepared GaS monocrystal is an independent triangle, and the maximum size of the GaS monocrystal can reach 240 mu m. As shown in FIG. 4b, the thickness of the resulting GaS single crystal was 0.85. 0.85 nm as characterized by atomic force microscopy, confirming that the large-size GaS single crystal we obtained was a single layer. FIG. 4c shows a Raman spectrum of a GaS single crystal with a vibrational peak at 183.1. 183.1 cm -1 (A 1g )、356.6 cm -1 (A 2g )。
By way of contrast, we prepared a GaS single crystal sample using a conventional CVD method, i.e., a conventional growth source used in CVD preparation, rather than a pretreated growth source. The conventional method is to take 65 mg Ga 2 S 3 The powder is directly used as a growth source for preparing the two-dimensional GaS by CVD, and pretreatment of the growth source, namely a pre-sintering and mixing step is not needed. The sample formed at this time has an approximately circular shape as shown in FIG. 5a instead of the triangular shape in FIG. 4a, and the sample cannot acquire the Raman signal at this time (as shown in FIG. 5 b), which proves that the crystallization quality is lowThe signal is weak.
Example 2: size control of two-dimensional GaS single crystal by presintering time
The pre-sintering step of the pre-treated growth source is shown in fig. 1, a quartz tube is embedded in the horizontal reaction furnace, a gas inlet 1 and a gas outlet 3 are respectively arranged at two ends of the horizontal reaction furnace, and pre-sintered powder is positioned at a central temperature zone 2 of the reaction furnace. Ga is added 2 S 3 50mg of powder (white, purity 99.999%) was placed in the central high temperature region of a horizontal reactor (furnace tube diameter 25 mm); firstly pumping Ar for 10 min to exhaust air in a furnace tube, then heating the furnace to 820 ℃ in Ar atmosphere (the flow of Ar is 80 sccm), heating the furnace to 700 ℃ at a heating rate of 35 ℃/min, heating the furnace to 820 ℃ at a heating rate of 10 ℃/min, and pumping Ar and H when the furnace temperature is raised to 820 ℃ 2 Is mixed with the gas (gas flow rate: ar: 55 sccm, H, respectively) 2 35 sccm), as described in example 1, in which case H in the mixed gas 2 Will be with Ga 2 S 3 Partial reduction reaction is carried out to obtain the Ga-containing alloy 2 S 3 And a presintered powder of two components of GaS. It is noted that the Ga contained in the pre-burned powder can be controlled by setting different pre-burned times, for example, 5, 10, 20, 30, 40, 50, 70 min 2 S 3 And the relative content of GaS. As the burn-in time increased from 5 min to 70 min, the GaS content in the burn-in powder was 4.6%, 10.8%, 16.5%, 18.1%, 19.6%, 21.2% and 21.9%, respectively.
Respectively taking 7 kinds of presintered powder obtained under different presintering time of more than 10 mg and 55 mg non-presintered Ga 2 S 3 By carrying out the mixing step in the same manner as in example 1, 7 different reaction source mixed powders were obtained. The content of GaS in the corresponding mixed powder of the reaction sources is 0.70%, 1.66%, 2.53%, 2.78%, 3.01%, 3.26% and 3.36% respectively. Therefore, the content of GaS in the growth source can be controlled by controlling the burn-in time, and the content of GaS in the reaction source mixed powder increases from 0.7% to 3.36% as the burn-in time increases.
The CVD growth preparation of two-dimensional GaS was performed using the above 7 different amounts of reaction sources, and other preparation processes were the same as described in fig. 3 and example 1, so that single-layer GaS single crystals of different sizes as shown in fig. 6 could be obtained. As the burn-in time increased from 5 min to 70 min, the GaS content in the reaction source mixed powder increased from 0.70% to 3.36%,
as shown in FIG. 6, the sizes of the two-dimensional GaS single crystals obtained by CVD are 20 μm, 35 μm, 60 μm, 120 μm, 240 μm, 100 μm, 20 μm and 5 μm, respectively, showing a tendency to increase and decrease. When the presintering time is 30 min and the GaS content in the corresponding reaction source mixed powder is 2.78%, the size of the obtained GaS single crystal is up to 240 mu m. This example demonstrates that the control of the two-dimensional GaS single crystal size can be achieved by controlling the firing time to control the GaS content in the reaction source mixed powder.
Example 3: thickness control of two-dimensional GaS single crystal by growth temperature
The growth source for preparing two-dimensional GaS in this example was first pretreated, wherein the pre-firing and mixing steps were the same as those described in example 1.
The growth preparation process of the two-dimensional GaS is shown in fig. 3, two ends of the horizontal reaction furnace are respectively provided with a GaS inlet 1 and a GaS outlet 4, and the growth source mixed powder is positioned at a central temperature zone 2 (a position 0 cm away from the central temperature zone) of the reaction furnace; the reaction substrate silicon wafer is placed at a position 3 (a position away from a central temperature zone 13 and cm) downstream of a high temperature zone of the horizontal reaction furnace, and the temperature of the zone is the growth temperature of the two-dimensional GaS. Before two-dimensional GaS grows, firstly, introducing Ar for 10 min to exhaust air in a furnace tube, then, respectively heating the reaction furnace to 840 ℃ and 860 ℃ in Ar atmosphere (Ar flow is 80 sccm), firstly, heating the reaction furnace to 700 ℃ at a speed of 35 ℃/min, and then, heating the reaction furnace to 820 ℃, 840 ℃ and 860 ℃ at a speed of 10 ℃/min. At this time, the temperature of the growth source at the position 2 was 840℃and 860℃and the corresponding temperature of the reaction substrate at the position 3 was 710℃and 730 ℃. During the growth of two-dimensional GaS, ar and H are introduced 2 Is mixed with the gas (gas flow rate: ar: 55 sccm, H, respectively) 2 35 sccm), the mixed powder of the growth source at the upstream position 2 is diffused to the surface of the silicon wafer of the growth substrate at the downstream position 3 along with the mixed gas to generate a reduction reaction, after the growth time lasts for 35 min, the silicon wafer is pushed out of a high-temperature area to enable the sample to be rapidly cooled at room temperature, and finally the sample is cooled at room temperatureAnd obtaining two-dimensional GaS monocrystal samples with different thicknesses on the surface of the silicon wafer.
The preparation conditions other than the growth temperature in this example were the same as those in example 1. In example 1, when the growth temperature was 690 ℃, the thickness of the obtained two-dimensional GaS single crystal was 0.85. 0.85 nm, as shown in fig. 4 (b). In this example, when the growth temperature is 710 ℃, the thickness of the obtained sample is 7-25 a nm (FIG. 7 a); when the growth temperature is 730 ℃, the thickness of the obtained sample is 40-60 nm (figure 7 b). This shows that the scheme can realize the regulation and control of the thickness of the two-dimensional GaS single crystal by changing the growth temperature.
Example 4 preparation of two-dimensional GaS on different growth substrates
The growth source for preparing two-dimensional GaS in this example was first pretreated, wherein the pre-firing and mixing steps were the same as those described in example 1. In this embodiment, other growth substrates except silicon wafers are selected, including sapphire, quartz, mica wafers, and the like, and two-dimensional GaS is prepared by using different growth substrates, and the specific implementation process is as follows:
the growth preparation process of the two-dimensional GaS is shown in fig. 3, two ends of the horizontal reaction furnace are respectively provided with a GaS inlet 1 and a GaS outlet 4, and the growth source mixed powder is positioned at a central temperature zone 2 (a position 0 cm away from the central temperature zone) of the reaction furnace; the reaction substrate was placed at a position 3 downstream of the high temperature zone of the horizontal reaction furnace (at a distance of cm from the central temperature zone 13), the temperature of this zone being the growth temperature of two-dimensional GaS. Before two-dimensional GaS grows, firstly, introducing Ar for 10 min to exhaust air in a furnace tube, then, respectively heating the reaction furnace to 800 ℃ (Ar flow is 80 sccm) in Ar atmosphere, and firstly, heating to 700 ℃ at a heating speed of 35 ℃/min, and then, respectively heating to 800 ℃ at a heating speed of 10 ℃/min. At this time, the temperature of the growth source at the position 2 was 800℃and the corresponding temperature of the reaction substrate at the position 3 was 670 ℃. During the growth of two-dimensional GaS, ar and H are introduced 2 Is mixed with the gas (gas flow rate: ar: 55 sccm, H, respectively) 2 35 sccm), the mixed powder of the growth source at the upstream position 2 is subjected to reduction reaction along with the diffusion of the mixed gas to the surface of the growth substrate at the downstream position 3, and after the growth time lasts for 20 min, the growth substrate is pushed out of a high-temperature area to enable the sample to be rapidly cooled at room temperature, and finally the growth substrate is obtainedObtaining a two-dimensional GaS single crystal sample.
The GaS samples prepared on the different growth substrates were subjected to optical microscopy and Raman spectroscopy characterization as shown in FIG. 8. The morphology of the prepared GaS single crystal is independent triangle (fig. 8 a-c), and the Raman spectrum corresponding to the sample is shown in fig. 8d, and the characteristic peak positions of GaS obtained on three different substrates are similar to those of fig. 4 c. This example demonstrates that this approach can achieve two-dimensional GaS when silicon wafer, sapphire, quartz, mica, etc. are used as growth substrates.
Example 5 Effect of growth time on preparation of two-dimensional GaS
The growth source for preparing two-dimensional GaS in this example was first pretreated, wherein the pre-firing and mixing steps were the same as those described in example 1.
The growth preparation process of the two-dimensional GaS is shown in fig. 3, two ends of the horizontal reaction furnace are respectively provided with a GaS inlet 1 and a GaS outlet 4, and the growth source mixed powder is positioned at a central temperature zone 2 (a position 0 cm away from the central temperature zone) of the reaction furnace; the reaction substrate silicon wafer is placed at a position 3 (a position away from a central temperature zone 13 and cm) downstream of a high temperature zone of the horizontal reaction furnace, and the temperature of the zone is the growth temperature of the two-dimensional GaS. Before two-dimensional GaS grows, firstly, introducing Ar for 10 min to exhaust air in a furnace tube, then heating the reaction furnace to 820 ℃ in Ar atmosphere (Ar flow is 80 sccm), and heating up to 700 ℃ at a speed of 35 ℃/min, and then heating up to 820 ℃ at a speed of 10 ℃/min. At this time, the temperature of the growth source at the position 2 was 820℃and the temperature of the reaction substrate at the position 3 was 690 ℃. During the growth of two-dimensional GaS, ar and H are introduced 2 The mixed GaS (the GaS flow rates are Ar: 55 sccm and H2: 35 sccm respectively), the mixed powder of the growth source at the upstream position 2 can be subjected to reduction reaction along with the diffusion of the mixed GaS to the surface of the silicon wafer of the growth substrate at the downstream position 3, after the growth time lasts for 35, 45 and 55 min, the silicon wafer is pushed out of the high-temperature area to enable the sample to be rapidly cooled at room temperature, and finally the two-dimensional GaS sample is obtained on the surface of the silicon wafer.
The GaS samples obtained were characterized using a scanning electron microscope as shown in fig. 9. When the growth time is 35 min, the obtained GaS is an independent triangular monocrystal; when the growth time is 45 min, the obtained GaS sample has an independent triangular monocrystal and a continuous film; when the growth time was 55 min, continuous GaS film samples were obtained. This example demonstrates that the preparation of GaS single crystals and thin films can be achieved by adjusting the growth time.
Claims (8)
1. The two-dimensional GaS prepared by the pretreatment growth source CVD method is characterized in that: the pretreatment growth source CVD method comprises the following steps:
1) Pretreatment of growth source Ga 2 S 3 ：Ga 2 S 3 Powder in Ar and H 2 Calcining under atmosphere to obtain a mixture containing GaS and Ga 2 S 3 Is used for pretreating a growth source;
2) Adding Ga into the pretreated growth source obtained in the step 1) 2 S 3 Powder to obtain mixed powder of reaction sources;
3) And 2) taking the reaction source mixed powder obtained in the step 2) as a growth source, and adopting a CVD method to prepare the two-dimensional GaS.
2. The method for preparing two-dimensional GaS by a pretreatment growth source CVD method according to claim 1, wherein: the CVD method of the step 3), wherein the reaction temperature of the mixed powder of the reaction source is 800-860 ℃; the growth temperature of GaS is 670-730 ℃.
3. The two-dimensional GaS prepared by the pretreatment-growth-source CVD method according to claim 1 or 2, wherein: the content of GaS in the reaction source mixed powder in the step 3) is 0.70-3.36 percent respectively.
4. A two-dimensional GaS prepared by a pretreatment growth source CVD method according to claim 3, wherein: the GaS content in the reaction source mixed powder in the step 3) is 2.78%.
5. A two-dimensional GaS prepared by a pretreatment growth source CVD method according to claim 3, wherein: and 3) the CVD method in the step 3), wherein the growth time of GaS is 35-55 min.
6. The method for preparing two-dimensional GaS by a pretreatment-growth-source CVD method according to claim 4 or 5, wherein: the reaction temperature of the mixed powder of the reaction sources is 820 ℃; the growth temperature of GaS was 690 ℃.
7. The method for preparing two-dimensional GaS by a pretreatment growth source CVD method according to claim 6, wherein: the growth time is 35, 45 or 55 min.
8. A two-dimensional GaS prepared by a pretreatment growth source CVD method according to claim 3, wherein: the CVD method of step 3), wherein the substrate on which the GaS material grows comprises silicon wafer, sapphire, mica or quartz.
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